Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102266) > Сторінка 898 з 1705
Фото | Назва | Виробник | Інформація |
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LM2901FV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SSOP-B Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 5V Current - Input Bias (Max): 0.05µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2901FV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SSOP-B Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 5V Current - Input Bias (Max): 0.05µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 2300 шт: термін постачання 21-31 дні (днів) |
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2SA2029FHAT2LQ | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2029FHAT2LQ | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6185 шт: термін постачання 21-31 дні (днів) |
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BA3472WFV-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 4mA Slew Rate: 10V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 100 nA Voltage - Input Offset: 7.5 mV Supplier Device Package: 8-SSOP-B Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA3472WFV-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 4mA Slew Rate: 10V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 100 nA Voltage - Input Offset: 7.5 mV Supplier Device Package: 8-SSOP-B Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
на замовлення 757 шт: термін постачання 21-31 дні (днів) |
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BA3474RFV-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA3474RFV-E2 | Rohm Semiconductor |
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на замовлення 178 шт: термін постачання 21-31 дні (днів) |
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BA82902YFV-CE2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA82902YFV-CE2 | Rohm Semiconductor |
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на замовлення 2379 шт: термін постачання 21-31 дні (днів) |
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BA2902YFV-MGE2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA2902YFV-MGE2 | Rohm Semiconductor |
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на замовлення 2468 шт: термін постачання 21-31 дні (днів) |
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BA4564WFV-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD6425EFV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.2A Interface: Analog, PWM Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 42V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 42V Supplier Device Package: 28-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD6425EFV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.2A Interface: Analog, PWM Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 42V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 42V Supplier Device Package: 28-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
на замовлення 2830 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD6423EFV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 700mA Interface: Analog, PWM Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 42V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 42V Supplier Device Package: 24-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD6423EFV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 700mA Interface: Analog, PWM Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 42V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 42V Supplier Device Package: 24-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
на замовлення 1438 шт: термін постачання 21-31 дні (днів) |
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BD6422EFV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 700mA Interface: Parallel Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 42V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 42V Supplier Device Package: 24-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BD6422EFV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 700mA Interface: Parallel Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 42V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 42V Supplier Device Package: 24-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 Part Status: Active |
на замовлення 5892 шт: термін постачання 21-31 дні (днів) |
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BZX84C10VLYFHT116 | Rohm Semiconductor |
![]() Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C10VLYFHT116 | Rohm Semiconductor |
![]() Tolerance: ±6% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 |
на замовлення 590 шт: термін постачання 21-31 дні (днів) |
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BD2062FJ-LBE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Features: Load Discharge, Status Flag Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RQ3P300BHTB1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RQ3P300BHTB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
на замовлення 14405 шт: термін постачання 21-31 дні (днів) |
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RQ7G080ATTCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RQ7G080ATTCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V |
на замовлення 3183 шт: термін постачання 21-31 дні (днів) |
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QH8KB5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8KB5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3028 шт: термін постачання 21-31 дні (днів) |
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QH8MB5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8MB5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 5456 шт: термін постачання 21-31 дні (днів) |
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QH8MC5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8MC5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 7182 шт: термін постачання 21-31 дні (днів) |
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QH8K26TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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QH8K26TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 1698 шт: термін постачання 21-31 дні (днів) |
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QH8JB5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8JB5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3339 шт: термін постачання 21-31 дні (днів) |
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QH8M22TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 9928 шт: термін постачання 21-31 дні (днів) |
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QS8K21TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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QS8K21TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 7173 шт: термін постачання 21-31 дні (днів) |
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QS8K11TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 4196 шт: термін постачання 21-31 дні (днів) |
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HS8MA2TCR1 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HS8MA2TCR1 | Rohm Semiconductor |
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на замовлення 890 шт: термін постачання 21-31 дні (днів) |
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BU45K312G-TL | Rohm Semiconductor |
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на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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BD450M2WFP3-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: SOT-223-4F Voltage - Output (Min/Fixed): 5V Control Features: Output Control Grade: Automotive Part Status: Active PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.35V @ 100mA Protection Features: Over Current, Thermal Shutdown Current - Supply (Max): 150 µA Qualification: AEC-Q100 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BD450M2WFP3-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: SOT-223-4F Voltage - Output (Min/Fixed): 5V Control Features: Output Control Grade: Automotive Part Status: Active PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.35V @ 100mA Protection Features: Over Current, Thermal Shutdown Current - Supply (Max): 150 µA Qualification: AEC-Q100 |
на замовлення 9719 шт: термін постачання 21-31 дні (днів) |
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BD450M5FP2-CZE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: TO-263-3F Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Thermal Shutdown Current - Supply (Max): 175 µA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD450M5FP2-CZE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: TO-263-3F Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Thermal Shutdown Current - Supply (Max): 175 µA Qualification: AEC-Q100 |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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RF1501TF3SC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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QS5Y2FSTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Frequency - Transition: 320MHz, 300MHz Supplier Device Package: TSMT5 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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QS5Y2FSTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Frequency - Transition: 320MHz, 300MHz Supplier Device Package: TSMT5 |
на замовлення 9159 шт: термін постачання 21-31 дні (днів) |
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DTA143XU3T106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA143XU3T106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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DTA143TU3T106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA143TU3T106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only |
на замовлення 1405 шт: термін постачання 21-31 дні (днів) |
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DTA143TCAHZGT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA143TCAHZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
на замовлення 5269 шт: термін постачання 21-31 дні (днів) |
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DTA143TMFHAT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA143TMFHAT2L | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: VMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 Only |
на замовлення 3534 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPFSR091 | Rohm Semiconductor |
![]() Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 91 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR100LJZPFSR091 | Rohm Semiconductor |
![]() Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm) Composition: Thick Film Operating Temperature: -65°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 91 mOhms |
на замовлення 3678 шт: термін постачання 21-31 дні (днів) |
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LM2901FV-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SSOP-B
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4 GEN PUR 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SSOP-B
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
LM2901FV-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SSOP-B
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4 GEN PUR 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SSOP-B
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 86.74 грн |
10+ | 74.18 грн |
25+ | 70.41 грн |
100+ | 54.28 грн |
250+ | 50.74 грн |
500+ | 44.84 грн |
1000+ | 34.82 грн |
2SA2029FHAT2LQ |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
2SA2029FHAT2LQ |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6185 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.47 грн |
21+ | 15.10 грн |
100+ | 7.81 грн |
500+ | 6.01 грн |
1000+ | 5.13 грн |
2000+ | 4.97 грн |
BA3472WFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 4mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7.5 mV
Supplier Device Package: 8-SSOP-B
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 4mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7.5 mV
Supplier Device Package: 8-SSOP-B
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
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BA3472WFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 4mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7.5 mV
Supplier Device Package: 8-SSOP-B
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 4mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7.5 mV
Supplier Device Package: 8-SSOP-B
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
на замовлення 757 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 168.71 грн |
10+ | 101.54 грн |
25+ | 85.65 грн |
100+ | 63.45 грн |
250+ | 55.16 грн |
500+ | 50.05 грн |
BA3474RFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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BA3474RFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
на замовлення 178 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 97.09 грн |
10+ | 83.53 грн |
25+ | 79.30 грн |
100+ | 61.13 грн |
BA82902YFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 14SSOPB
Description: IC OPAMP GP 2 CIRCUIT 14SSOPB
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BA82902YFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 14SSOPB
Description: IC OPAMP GP 2 CIRCUIT 14SSOPB
на замовлення 2379 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 128.13 грн |
10+ | 118.86 грн |
25+ | 87.21 грн |
50+ | 79.99 грн |
100+ | 78.12 грн |
250+ | 70.68 грн |
500+ | 67.69 грн |
1000+ | 58.54 грн |
BA2902YFV-MGE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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од. на суму грн.
BA2902YFV-MGE2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
на замовлення 2468 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.21 грн |
10+ | 96.18 грн |
25+ | 91.26 грн |
100+ | 70.34 грн |
250+ | 65.76 грн |
500+ | 58.11 грн |
1000+ | 45.12 грн |
BA4564WFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
Description: IC OPAMP GP 4 CIRCUIT 14SSOPB
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BD6425EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MTR DRV BIPLR 19-42V 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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BD6425EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 28HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MTR DRV BIPLR 19-42V 28HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BD6423EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
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BD6423EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Analog, PWM
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
на замовлення 1438 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 646.20 грн |
10+ | 418.42 грн |
25+ | 365.27 грн |
100+ | 286.33 грн |
250+ | 258.63 грн |
500+ | 253.01 грн |
BD6422EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 264.04 грн |
BD6422EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
Description: IC MTR DRV BIPLR 19-42V 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 42V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 42V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
на замовлення 5892 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 619.14 грн |
10+ | 399.64 грн |
25+ | 348.44 грн |
100+ | 272.67 грн |
250+ | 245.99 грн |
500+ | 238.61 грн |
BZX84C10VLYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 10V 250MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 250MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
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BZX84C10VLYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 10V 250MW SOT23
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 250MW SOT23
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
на замовлення 590 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.49 грн |
23+ | 13.79 грн |
100+ | 7.00 грн |
500+ | 6.50 грн |
BD2062FJ-LBE2 |
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Виробник: Rohm Semiconductor
Description: IC SWITCH USB HI SIDE 2CH SOP8J
Packaging: Tape & Reel (TR)
Features: Load Discharge, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
Description: IC SWITCH USB HI SIDE 2CH SOP8J
Packaging: Tape & Reel (TR)
Features: Load Discharge, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
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RQ3P300BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 79.12 грн |
6000+ | 73.33 грн |
9000+ | 70.90 грн |
RQ3P300BHTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
на замовлення 14405 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 175.87 грн |
10+ | 140.32 грн |
100+ | 111.71 грн |
500+ | 88.71 грн |
1000+ | 75.27 грн |
RQ7G080ATTCR |
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Виробник: Rohm Semiconductor
Description: PCH -40V -8A SMALL SIGNAL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
Description: PCH -40V -8A SMALL SIGNAL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
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RQ7G080ATTCR |
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Виробник: Rohm Semiconductor
Description: PCH -40V -8A SMALL SIGNAL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
Description: PCH -40V -8A SMALL SIGNAL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
на замовлення 3183 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.83 грн |
10+ | 66.90 грн |
100+ | 49.51 грн |
500+ | 35.04 грн |
QH8KB5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 20.04 грн |
QH8KB5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3028 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.97 грн |
10+ | 49.74 грн |
100+ | 31.29 грн |
500+ | 22.80 грн |
1000+ | 21.06 грн |
QH8MB5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 25.72 грн |
QH8MB5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 5456 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 99.48 грн |
10+ | 60.31 грн |
100+ | 39.92 грн |
500+ | 29.25 грн |
1000+ | 26.60 грн |
QH8MC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 26.44 грн |
QH8MC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 7182 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.05 грн |
10+ | 61.23 грн |
100+ | 40.68 грн |
500+ | 29.93 грн |
1000+ | 27.66 грн |
QH8K26TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
QH8K26TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 1698 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 71.62 грн |
10+ | 56.71 грн |
100+ | 44.09 грн |
500+ | 35.07 грн |
1000+ | 28.57 грн |
QH8JB5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 36.03 грн |
QH8JB5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 40V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3339 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 132.10 грн |
10+ | 81.00 грн |
100+ | 54.43 грн |
500+ | 40.37 грн |
1000+ | 36.93 грн |
QH8M22TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 9928 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 108.23 грн |
10+ | 70.89 грн |
100+ | 49.75 грн |
500+ | 39.41 грн |
1000+ | 36.11 грн |
QS8K21TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 29.04 грн |
6000+ | 25.97 грн |
QS8K21TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 45V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 7173 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 110.62 грн |
10+ | 66.44 грн |
100+ | 44.76 грн |
500+ | 32.90 грн |
1000+ | 28.87 грн |
QS8K11TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 4196 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 88.33 грн |
10+ | 56.63 грн |
100+ | 37.85 грн |
500+ | 28.18 грн |
1000+ | 25.61 грн |
HS8MA2TCR1 |
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Виробник: Rohm Semiconductor
Description: 30V DUAL COMMON DRAIN PCH+NCH PO
Description: 30V DUAL COMMON DRAIN PCH+NCH PO
товару немає в наявності
В кошику
од. на суму грн.
HS8MA2TCR1 |
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Виробник: Rohm Semiconductor
Description: 30V DUAL COMMON DRAIN PCH+NCH PO
Description: 30V DUAL COMMON DRAIN PCH+NCH PO
на замовлення 890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 89.93 грн |
10+ | 77.17 грн |
100+ | 60.18 грн |
500+ | 46.65 грн |
BU45K312G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 28 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.75 грн |
10+ | 39.24 грн |
25+ | 36.60 грн |
BD450M2WFP3-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 200MA SOT223-4F
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: SOT-223-4F
Voltage - Output (Min/Fixed): 5V
Control Features: Output Control
Grade: Automotive
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 150 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 200MA SOT223-4F
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: SOT-223-4F
Voltage - Output (Min/Fixed): 5V
Control Features: Output Control
Grade: Automotive
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 150 µA
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 60.22 грн |
BD450M2WFP3-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 200MA SOT223-4F
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: SOT-223-4F
Voltage - Output (Min/Fixed): 5V
Control Features: Output Control
Grade: Automotive
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 150 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 200MA SOT223-4F
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: SOT-223-4F
Voltage - Output (Min/Fixed): 5V
Control Features: Output Control
Grade: Automotive
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 150 µA
Qualification: AEC-Q100
на замовлення 9719 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 143.25 грн |
10+ | 124.15 грн |
25+ | 117.16 грн |
100+ | 93.67 грн |
250+ | 87.94 грн |
500+ | 76.95 грн |
1000+ | 62.71 грн |
BD450M5FP2-CZE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
BD450M5FP2-CZE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 500MA TO263-3F
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Thermal Shutdown
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
на замовлення 480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 203.73 грн |
10+ | 127.29 грн |
25+ | 109.13 грн |
100+ | 83.28 грн |
250+ | 73.97 грн |
RF1501TF3SC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 121.76 грн |
50+ | 77.22 грн |
100+ | 75.51 грн |
QS5Y2FSTR |
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Виробник: Rohm Semiconductor
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 15.54 грн |
6000+ | 14.21 грн |
QS5Y2FSTR |
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Виробник: Rohm Semiconductor
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
на замовлення 9159 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.16 грн |
10+ | 37.93 грн |
100+ | 26.38 грн |
500+ | 19.33 грн |
1000+ | 15.71 грн |
DTA143XU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
DTA143XU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.53 грн |
38+ | 8.28 грн |
100+ | 5.11 грн |
500+ | 3.49 грн |
1000+ | 3.07 грн |
DTA143TU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
товару немає в наявності
В кошику
од. на суму грн.
DTA143TU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
на замовлення 1405 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.53 грн |
38+ | 8.28 грн |
100+ | 5.11 грн |
500+ | 3.49 грн |
1000+ | 3.07 грн |
DTA143TCAHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.06 грн |
DTA143TCAHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 5269 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.53 грн |
40+ | 7.82 грн |
100+ | 4.87 грн |
500+ | 3.32 грн |
1000+ | 2.91 грн |
DTA143TMFHAT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
товару немає в наявності
В кошику
од. на суму грн.
DTA143TMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 3534 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 15.92 грн |
33+ | 9.43 грн |
100+ | 5.84 грн |
500+ | 4.00 грн |
1000+ | 3.52 грн |
2000+ | 3.12 грн |
LTR100LJZPFSR091 |
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Виробник: Rohm Semiconductor
Description: RES 0.091 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 91 mOhms
Description: RES 0.091 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 91 mOhms
товару немає в наявності
В кошику
од. на суму грн.
LTR100LJZPFSR091 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 0.091 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 91 mOhms
Description: RES 0.091 OHM 1% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -65°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 91 mOhms
на замовлення 3678 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 161.55 грн |
10+ | 92.34 грн |
50+ | 67.99 грн |
100+ | 56.69 грн |
500+ | 44.23 грн |
1000+ | 40.42 грн |