Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (106407) > Сторінка 926 з 1774
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BU33SA4WGWL-E2 | Rohm Semiconductor |
Description: IC REG LIN 3.3V 200MA 4UCSP50L1Voltage Dropout (Max): 0.15V @ 100mA PSRR: 70dB ~ 45dB (1kHz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: UCSP50L1 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 80 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Packaging: Cut Tape (CT) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UFBGA, CSPBGA Protection Features: Over Current, Over Temperature |
на замовлення 3555 шт: термін постачання 21-31 дні (днів) |
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BU33JA2DG-CTR | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 100MA 5SSOP Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.155V @ 100mA PSRR: 68dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 5-SSOP Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 80 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BU33JA2DG-CTR | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 100MA 5SSOP Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.155V @ 100mA PSRR: 68dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 5-SSOP Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 80 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 10779 шт: термін постачання 21-31 дні (днів) |
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BU33JA2VG-CGTR | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 200MA 5-SSOPQualification: AEC-Q100 Grade: Automotive Protection Features: Over Current, Over Temperature, Reverse Polarity Voltage Dropout (Max): 0.155V @ 100mA PSRR: 68dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 5-SSOP Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 80 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BU33JA2VG-CGTR | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 200MA 5-SSOPGrade: Automotive Protection Features: Over Current, Over Temperature, Reverse Polarity Voltage Dropout (Max): 0.155V @ 100mA PSRR: 68dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 5-SSOP Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 80 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 200mA Mounting Type: Surface Mount Qualification: AEC-Q100 Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 3020 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ101 | Rohm Semiconductor |
Description: RES 100 OHM 5% 1/10W 0603Power (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 100 Ohms |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SFR03EZPJ101 | Rohm Semiconductor |
Description: RES 100 OHM 5% 1/10W 0603Power (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 100 Ohms |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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R6009RND3TL1 | Rohm Semiconductor |
Description: 600V 9A TO-252, PRESTOMOS WITH IPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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R6009RND3TL1 | Rohm Semiconductor |
Description: 600V 9A TO-252, PRESTOMOS WITH IPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V |
на замовлення 2111 шт: термін постачання 21-31 дні (днів) |
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UT6J3TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 3A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 2835 шт: термін постачання 21-31 дні (днів) |
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RF4P060BGTCR | Rohm Semiconductor |
Description: NCH 100V 6A, HUML2020L8, POWER MInput Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020-8S Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RF4P060BGTCR | Rohm Semiconductor |
Description: NCH 100V 6A, HUML2020L8, POWER MInput Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020-8S Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 2253 шт: термін постачання 21-31 дні (днів) |
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RF4P025ATTCR | Rohm Semiconductor |
Description: PCH -100V -2.5A POWER MOSFETRds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RF4P025ATTCR | Rohm Semiconductor |
Description: PCH -100V -2.5A POWER MOSFETRds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 1854 шт: термін постачання 21-31 дні (днів) |
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BA2901YF-MGE2 | Rohm Semiconductor |
Description: IC COMPARATOR 4 GEN PUR 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 14-SOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.05µA @ 5V Current - Output (Typ): 16mA @ 5V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BA2901YF-MGE2 | Rohm Semiconductor |
Description: IC COMPARATOR 4 GEN PUR 14SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 14-SOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.05µA @ 5V Current - Output (Typ): 16mA @ 5V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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| BH8100FV-E2 | Rohm Semiconductor |
Description: CUSTOM; FOR MARSHALL & STYRKER O Part Status: Active Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KTR10EZPF5362 | Rohm Semiconductor |
Description: RES SMD 53.6K OHM 1% 1/8W 0805Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 53.6 kOhms |
на замовлення 2805 шт: термін постачання 21-31 дні (днів) |
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DTC143EE3TL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DTC143EE3TL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 617 шт: термін постачання 21-31 дні (днів) |
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BD65494MUV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFNPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: VQFN016V3030 Voltage - Load: 2V ~ 9V Technology: DMOS Applications: General Purpose Voltage - Supply: 2.5V ~ 3.6V Output Configuration: Half Bridge (2) Operating Temperature: -30°C ~ 150°C (TJ) Interface: Parallel Current - Output: 1A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD65494MUV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFNPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: VQFN016V3030 Voltage - Load: 2V ~ 9V Technology: DMOS Applications: General Purpose Voltage - Supply: 2.5V ~ 3.6V Output Configuration: Half Bridge (2) Operating Temperature: -30°C ~ 150°C (TJ) Interface: Parallel Current - Output: 1A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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BD2801MUV-E2 | Rohm Semiconductor |
Description: 3CH BUILT-IN CHARGE PUMP LINEARPart Status: Active Supplier Device Package: VQFN016V3030 Topology: Switched Capacitor (Charge Pump) Internal Switch(s): No Current - Output / Channel: 100mA Applications: General Purpose Operating Temperature: 0°C ~ 70°C Type: DC DC Controller Number of Outputs: 3 Mounting Type: Surface Mount Voltage - Output: 20V Package / Case: 16-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Voltage - Supply (Max): 3.465V Voltage - Supply (Min): 3.135V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD2801MUV-E2 | Rohm Semiconductor |
Description: 3CH BUILT-IN CHARGE PUMP LINEARPart Status: Active Supplier Device Package: VQFN016V3030 Topology: Switched Capacitor (Charge Pump) Applications: General Purpose Operating Temperature: 0°C ~ 70°C Type: DC DC Controller Number of Outputs: 3 Mounting Type: Surface Mount Voltage - Output: 20V Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) Internal Switch(s): No Current - Output / Channel: 100mA Voltage - Supply (Max): 3.465V Voltage - Supply (Min): 3.135V |
на замовлення 1620 шт: термін постачання 21-31 дні (днів) |
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LTR100JZPF4300 | Rohm Semiconductor |
Description: RES 430 OHM 1% 2W 1225Resistance: 430 Ohms Part Status: Active Height - Seated (Max): 0.028" (0.70mm) Supplier Device Package: 1225 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Temperature Coefficient: ±100ppm/°C Package / Case: Wide 2512 (6432 Metric), 1225 Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 2W Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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LTR100JZPF4300 | Rohm Semiconductor |
Description: RES 430 OHM 1% 2W 1225Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Temperature Coefficient: ±100ppm/°C Package / Case: Wide 2512 (6432 Metric), 1225 Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 2W Packaging: Cut Tape (CT) Resistance: 430 Ohms Part Status: Active Height - Seated (Max): 0.028" (0.70mm) Supplier Device Package: 1225 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF4300 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSHeight - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±1% Power (Watts): 0.1W, 1/10W Packaging: Tape & Reel (TR) Resistance: 430 Ohms Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF4300 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSResistance: 430 Ohms Part Status: Active Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±1% Power (Watts): 0.1W, 1/10W Packaging: Cut Tape (CT) |
на замовлення 9995 шт: термін постачання 21-31 дні (днів) |
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ESR18EZPF4300 | Rohm Semiconductor |
Description: RES SMD 430 OHM 1% 1/2W 1206Resistance: 430 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±100ppm/°C Package / Case: 1206 (3216 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.5W, 1/2W Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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ESR18EZPF4300 | Rohm Semiconductor |
Description: RES SMD 430 OHM 1% 1/2W 1206Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±100ppm/°C Package / Case: 1206 (3216 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.5W, 1/2W Packaging: Cut Tape (CT) Resistance: 430 Ohms Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR10EZPF4300 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±1% Power (Watts): 0.5W, 1/2W Packaging: Tape & Reel (TR) Resistance: 430 Ohms |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SDR10EZPF4300 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 430 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SIR-563ST3F | Rohm Semiconductor |
Description: INFRARED LIGHT EMITTING DIODES TPackaging: Bulk Package / Case: Radial Wavelength: 940nm Mounting Type: Through Hole Type: Infrared (IR) Orientation: Top View Operating Temperature: -25°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.34V Viewing Angle: 30° Current - DC Forward (If) (Max): 100mA Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BH28MA3WHFV-TR | Rohm Semiconductor |
Description: IC REG LINEAR 2.8V 300MA 6-HVSOFPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-HVSOF Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.09V @ 100mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| BH28SA3WGUT-E2 | Rohm Semiconductor |
Description: IC REG LIN 2.8V 150MA VCSP60N1 Packaging: Cut Tape (CT) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: VCSP60N1 Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 63dB (1kHz) Voltage Dropout (Max): 0.15V @ 100mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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R6035KNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 35A TO3PFDrain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V |
на замовлення 277 шт: термін постачання 21-31 дні (днів) |
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R6030KNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO3PFFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
на замовлення 298 шт: термін постачання 21-31 дні (днів) |
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R6030JNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 7V @ 5.5mA Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bag |
на замовлення 204 шт: термін постачання 21-31 дні (днів) |
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R6077VNZC17 | Rohm Semiconductor |
Description: 600V 29A TO-3PF, PRESTOMOS WITHPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1.9mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V |
на замовлення 407 шт: термін постачання 21-31 дні (днів) |
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R6515KNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 650V 15A TO3Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 430µA Power Dissipation (Max): 60W (Tc) |
на замовлення 292 шт: термін постачання 21-31 дні (днів) |
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R6530KNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 650V 30A TO3Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 960µA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Package / Case: TO-3P-3 Full Pack Packaging: Tube |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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R6535ENZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 650V 35A TO3Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.21mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
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R6530ENZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 650V 30A TO3Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 960µA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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R6524KNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 650V 24A TO3Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 750µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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SCT4036KEC11 | Rohm Semiconductor |
Description: 1200V, 36M, 3-PIN THD, TRENCH-STPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 176W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V |
на замовлення 4652 шт: термін постачання 21-31 дні (днів) |
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SCT4026DEHRC11 | Rohm Semiconductor |
Description: 750V, 56A, 3-PIN THD, TRENCH-STRInput Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Power Dissipation (Max): 176W Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive |
на замовлення 320 шт: термін постачання 21-31 дні (днів) |
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SCT4036KEHRC11 | Rohm Semiconductor |
Description: 1200V, 43A, 3-PIN THD, TRENCH-STPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 176W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 269 шт: термін постачання 21-31 дні (днів) |
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SCT4026DEC11 | Rohm Semiconductor |
Description: 750V, 26M, 3-PIN THD, TRENCH-STRPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Power Dissipation (Max): 176W Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V |
на замовлення 4843 шт: термін постачання 21-31 дні (днів) |
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SCT4062KEHRC11 | Rohm Semiconductor |
Description: 1200V, 26A, 3-PIN THD, TRENCH-STGate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Power Dissipation (Max): 115W Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Qualification: AEC-Q101 Grade: Automotive |
на замовлення 153 шт: термін постачання 21-31 дні (днів) |
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2SAR552P5T100 | Rohm Semiconductor |
Description: TRANS PNP 30V 3A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 330MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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2SAR552P5T100 | Rohm Semiconductor |
Description: TRANS PNP 30V 3A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 330MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 1534 шт: термін постачання 21-31 дні (днів) |
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2SAR375P5T100R | Rohm Semiconductor |
Description: TRANS PNP 120V 1.5A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 280MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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2SAR375P5T100R | Rohm Semiconductor |
Description: TRANS PNP 120V 1.5A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: MPT3 Frequency - Transition: 280MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 3543 шт: термін постачання 21-31 дні (днів) |
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DTA123JE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DTA123JE3HZGTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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DTC115EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DTC115EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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LTR50UZPFSR030 | Rohm Semiconductor |
Description: RES 0.03 OHM 1% 2W WIDE 2010Power (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2010 (5025 Metric), 1020 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1020 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 30 mOhms |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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LTR50UZPFSR030 | Rohm Semiconductor |
Description: RES 0.03 OHM 1% 2W WIDE 2010Power (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2010 (5025 Metric), 1020 Temperature Coefficient: 0/ +200ppm/°C Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1020 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 30 mOhms |
на замовлення 4996 шт: термін постачання 21-31 дні (днів) |
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RSA12LAGTR | Rohm Semiconductor |
Description: TVS DIODE 12VWM 19.5VC PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: PMDS Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
| BU33SA4WGWL-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Voltage Dropout (Max): 0.15V @ 100mA
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: UCSP50L1
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Packaging: Cut Tape (CT)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, CSPBGA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Voltage Dropout (Max): 0.15V @ 100mA
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: UCSP50L1
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Packaging: Cut Tape (CT)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, CSPBGA
Protection Features: Over Current, Over Temperature
на замовлення 3555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.33 грн |
| 10+ | 34.72 грн |
| 25+ | 32.43 грн |
| 100+ | 24.34 грн |
| 250+ | 22.60 грн |
| 500+ | 19.12 грн |
| 1000+ | 14.54 грн |
| BU33JA2DG-CTR |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 28.48 грн |
| 6000+ | 26.06 грн |
| BU33JA2DG-CTR |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 10779 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.41 грн |
| 10+ | 57.82 грн |
| 25+ | 54.86 грн |
| 100+ | 42.29 грн |
| 250+ | 39.53 грн |
| 500+ | 34.93 грн |
| 1000+ | 27.13 грн |
| BU33JA2VG-CGTR |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA 5-SSOP
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3.3V 200MA 5-SSOP
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.64 грн |
| BU33JA2VG-CGTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA 5-SSOP
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Qualification: AEC-Q100
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3.3V 200MA 5-SSOP
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.155V @ 100mA
PSRR: 68dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Qualification: AEC-Q100
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 3020 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.30 грн |
| 10+ | 36.76 грн |
| 25+ | 33.03 грн |
| 100+ | 27.20 грн |
| 250+ | 25.38 грн |
| 500+ | 24.28 грн |
| 1000+ | 23.00 грн |
| SFR03EZPJ101 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SFR03EZPJ101 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.62 грн |
| 41+ | 7.40 грн |
| 106+ | 2.85 грн |
| 1000+ | 1.18 грн |
| 2500+ | 1.02 грн |
| R6009RND3TL1 |
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Виробник: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| R6009RND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
на замовлення 2111 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.33 грн |
| 10+ | 70.42 грн |
| 25+ | 63.92 грн |
| 100+ | 53.25 грн |
| 250+ | 50.05 грн |
| 500+ | 48.12 грн |
| 1000+ | 45.77 грн |
| UT6J3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 2835 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 50.80 грн |
| 100+ | 33.36 грн |
| 500+ | 24.27 грн |
| 1000+ | 22.00 грн |
| RF4P060BGTCR |
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Виробник: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RF4P060BGTCR |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Description: NCH 100V 6A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 2253 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.08 грн |
| 10+ | 50.04 грн |
| 100+ | 32.83 грн |
| 500+ | 23.87 грн |
| 1000+ | 21.63 грн |
| RF4P025ATTCR |
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Виробник: Rohm Semiconductor
Description: PCH -100V -2.5A POWER MOSFET
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: PCH -100V -2.5A POWER MOSFET
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RF4P025ATTCR |
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Виробник: Rohm Semiconductor
Description: PCH -100V -2.5A POWER MOSFET
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Description: PCH -100V -2.5A POWER MOSFET
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 1854 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.52 грн |
| 10+ | 49.29 грн |
| 100+ | 32.30 грн |
| 500+ | 23.46 грн |
| 1000+ | 21.26 грн |
| BA2901YF-MGE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BA2901YF-MGE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.22 грн |
| 10+ | 81.06 грн |
| 25+ | 73.61 грн |
| 100+ | 61.41 грн |
| 250+ | 57.74 грн |
| 500+ | 55.54 грн |
| 1000+ | 52.84 грн |
| BH8100FV-E2 |
Виробник: Rohm Semiconductor
Description: CUSTOM; FOR MARSHALL & STYRKER O
Part Status: Active
Packaging: Tape & Reel (TR)
Description: CUSTOM; FOR MARSHALL & STYRKER O
Part Status: Active
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| KTR10EZPF5362 |
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Виробник: Rohm Semiconductor
Description: RES SMD 53.6K OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 53.6 kOhms
Description: RES SMD 53.6K OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 53.6 kOhms
на замовлення 2805 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 45+ | 6.79 грн |
| 100+ | 3.96 грн |
| 1000+ | 2.49 грн |
| 2500+ | 2.21 грн |
| DTC143EE3TL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTC143EE3TL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.60 грн |
| 27+ | 11.32 грн |
| 100+ | 7.07 грн |
| 500+ | 4.89 грн |
| BD65494MUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VQFN016V3030
Voltage - Load: 2V ~ 9V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 3.6V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VQFN016V3030
Voltage - Load: 2V ~ 9V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 3.6V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD65494MUV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VQFN016V3030
Voltage - Load: 2V ~ 9V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 3.6V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: VQFN016V3030
Voltage - Load: 2V ~ 9V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.5V ~ 3.6V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 167.74 грн |
| 10+ | 145.30 грн |
| 25+ | 137.04 грн |
| 100+ | 109.58 грн |
| 250+ | 102.89 грн |
| 500+ | 90.03 грн |
| 1000+ | 73.37 грн |
| BD2801MUV-E2 |
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Виробник: Rohm Semiconductor
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Part Status: Active
Supplier Device Package: VQFN016V3030
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 100mA
Applications: General Purpose
Operating Temperature: 0°C ~ 70°C
Type: DC DC Controller
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 3.465V
Voltage - Supply (Min): 3.135V
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Part Status: Active
Supplier Device Package: VQFN016V3030
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 100mA
Applications: General Purpose
Operating Temperature: 0°C ~ 70°C
Type: DC DC Controller
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 3.465V
Voltage - Supply (Min): 3.135V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD2801MUV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Part Status: Active
Supplier Device Package: VQFN016V3030
Topology: Switched Capacitor (Charge Pump)
Applications: General Purpose
Operating Temperature: 0°C ~ 70°C
Type: DC DC Controller
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Internal Switch(s): No
Current - Output / Channel: 100mA
Voltage - Supply (Max): 3.465V
Voltage - Supply (Min): 3.135V
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Part Status: Active
Supplier Device Package: VQFN016V3030
Topology: Switched Capacitor (Charge Pump)
Applications: General Purpose
Operating Temperature: 0°C ~ 70°C
Type: DC DC Controller
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Internal Switch(s): No
Current - Output / Channel: 100mA
Voltage - Supply (Max): 3.465V
Voltage - Supply (Min): 3.135V
на замовлення 1620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.76 грн |
| 10+ | 112.31 грн |
| 25+ | 94.92 грн |
| 100+ | 70.66 грн |
| 250+ | 61.61 грн |
| 500+ | 56.04 грн |
| 1000+ | 50.54 грн |
| LTR100JZPF4300 |
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Виробник: Rohm Semiconductor
Description: RES 430 OHM 1% 2W 1225
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 2W
Packaging: Tape & Reel (TR)
Description: RES 430 OHM 1% 2W 1225
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 2W
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 12.84 грн |
| LTR100JZPF4300 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 430 OHM 1% 2W 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
Description: RES 430 OHM 1% 2W 1225
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 2512 (6432 Metric), 1225
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.028" (0.70mm)
Supplier Device Package: 1225
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.87 грн |
| 10+ | 39.17 грн |
| 50+ | 27.67 грн |
| 100+ | 21.43 грн |
| 500+ | 15.15 грн |
| 1000+ | 12.02 грн |
| SFR03EZPF4300 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
Part Status: Active
Description: SULFUR TOLERANT CHIP RESISTORS
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.27 грн |
| SFR03EZPF4300 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.97 грн |
| 33+ | 9.36 грн |
| 100+ | 3.60 грн |
| 1000+ | 1.49 грн |
| 2500+ | 1.28 грн |
| ESR18EZPF4300 |
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Виробник: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Description: RES SMD 430 OHM 1% 1/2W 1206
Resistance: 430 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ESR18EZPF4300 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
Description: RES SMD 430 OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 430 Ohms
Part Status: Active
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| SDR10EZPF4300 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 430 Ohms
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Мінімальне замовлення: 5000 шт
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| SDR10EZPF4300 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
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| SIR-563ST3F |
![]() |
Виробник: Rohm Semiconductor
Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
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| BH28MA3WHFV-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.8V 300MA 6-HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.8V 300MA 6-HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| BH28SA3WGUT-E2 |
Виробник: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
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| R6035KNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO3PF
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Description: MOSFET N-CH 600V 35A TO3PF
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
на замовлення 277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 328.42 грн |
| 30+ | 266.56 грн |
| 120+ | 132.48 грн |
| R6030KNZC17 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Description: MOSFET N-CH 600V 30A TO3PF
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 589.43 грн |
| 30+ | 331.38 грн |
| 120+ | 306.54 грн |
| R6030JNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Description: MOSFET N-CH 600V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 618.43 грн |
| 10+ | 406.83 грн |
| 50+ | 325.92 грн |
| R6077VNZC17 |
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Виробник: Rohm Semiconductor
Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
на замовлення 407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 637.24 грн |
| 30+ | 362.02 грн |
| 120+ | 306.69 грн |
| R6515KNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A TO3
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 60W (Tc)
Description: MOSFET N-CH 650V 15A TO3
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 430µA
Power Dissipation (Max): 60W (Tc)
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.58 грн |
| 30+ | 160.09 грн |
| 120+ | 156.03 грн |
| R6530KNZC17 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 30A TO3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.82 грн |
| 30+ | 220.72 грн |
| 120+ | 112.70 грн |
| R6535ENZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 595.70 грн |
| 30+ | 335.70 грн |
| 120+ | 283.53 грн |
| R6530ENZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 30A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.82 грн |
| 30+ | 220.72 грн |
| 120+ | 215.77 грн |
| R6524KNZC17 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 650V 24A TO3
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 499.29 грн |
| 10+ | 432.11 грн |
| 100+ | 354.05 грн |
| SCT4036KEC11 |
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Виробник: Rohm Semiconductor
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 4652 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1499.44 грн |
| 30+ | 905.74 грн |
| 60+ | 841.84 грн |
| 120+ | 739.62 грн |
| 510+ | 712.13 грн |
| SCT4026DEHRC11 |
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Виробник: Rohm Semiconductor
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Power Dissipation (Max): 176W
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1377.16 грн |
| 30+ | 1089.93 грн |
| 120+ | 954.02 грн |
| SCT4036KEHRC11 |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1447.71 грн |
| 10+ | 998.43 грн |
| 50+ | 829.92 грн |
| SCT4026DEC11 |
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Виробник: Rohm Semiconductor
Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
на замовлення 4843 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1480.63 грн |
| 30+ | 893.54 грн |
| 60+ | 830.31 грн |
| 120+ | 729.34 грн |
| 510+ | 700.88 грн |
| SCT4062KEHRC11 |
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Виробник: Rohm Semiconductor
Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Power Dissipation (Max): 115W
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
Grade: Automotive
Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Power Dissipation (Max): 115W
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 868.47 грн |
| 10+ | 734.48 грн |
| 2SAR552P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2SAR552P5T100 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 3A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 330MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 10+ | 31.85 грн |
| 100+ | 22.15 грн |
| 500+ | 16.23 грн |
| 2SAR375P5T100R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 22.47 грн |
| 2000+ | 19.72 грн |
| 2SAR375P5T100R |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 3543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.17 грн |
| 10+ | 47.32 грн |
| 100+ | 30.96 грн |
| 500+ | 22.44 грн |
| DTA123JE3HZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTA123JE3HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.00 грн |
| 16+ | 19.55 грн |
| 100+ | 9.86 грн |
| 500+ | 7.55 грн |
| 1000+ | 5.60 грн |
| DTC115EUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTC115EUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.51 грн |
| 22+ | 14.27 грн |
| 100+ | 8.92 грн |
| 500+ | 6.19 грн |
| 1000+ | 5.48 грн |
| LTR50UZPFSR030 |
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Виробник: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| LTR50UZPFSR030 |
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Виробник: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
Description: RES 0.03 OHM 1% 2W WIDE 2010
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.46 грн |
| 10+ | 63.33 грн |
| 50+ | 53.12 грн |
| 100+ | 43.14 грн |
| 500+ | 30.68 грн |
| 1000+ | 25.50 грн |
| RSA12LAGTR |
Виробник: Rohm Semiconductor
Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
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