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2SK4161D 2SK4161D Sanken Electric USA Inc. 2sk4161d_ds_en.pdf Description: MOS FET 60V/100A/0.0038
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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AB01BV1 AB01BV1 Sanken Electric USA Inc. ab01b_ds_en.pdf Description: DIODE GEN PURP 800V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 2604 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AB01BV1 AB01BV1 Sanken Electric USA Inc. ab01b_ds_en.pdf Description: DIODE GEN PURP 800V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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AG01AV1 AG01AV1 Sanken Electric USA Inc. ag01a_ds_en.pdf Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 600 mA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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AG01AV1 AG01AV1 Sanken Electric USA Inc. ag01a_ds_en.pdf Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 600 mA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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AG01AWK AG01AWK Sanken Electric USA Inc. ag01a_ds_en.pdf Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 600 mA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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AK 06 Sanken Electric USA Inc. ak%2006_ds_en.pdf Description: DIODE SCHOTTKY 60V 700MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 700 mA
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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AL01Z AL01Z Sanken Electric USA Inc. al01z_ds_en.pdf Description: DIODE STANDARD 200V 1A
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AL01ZV0 AL01ZV0 Sanken Electric USA Inc. al01z_ds_en.pdf Description: DIODE STANDARD 200V 1A
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AL01ZV1 AL01ZV1 Sanken Electric USA Inc. al01z_ds_en.pdf Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AL01ZV1 AL01ZV1 Sanken Electric USA Inc. al01z_ds_en.pdf Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AL01ZWK AL01ZWK Sanken Electric USA Inc. al01z_ds_en.pdf Description: DIODE STANDARD 200V 1A
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AM01AWK AM01AWK Sanken Electric USA Inc. am01a_ds_en.pdf Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AM01JB AM01JB Sanken Electric USA Inc. am01jb_ds_en.pdf Description: HIGH VOLTAGE RECTIFIER DIODE (AX
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 10mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 750 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 750 V
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AM01ZWS AM01ZWS Sanken Electric USA Inc. am01z_ds_en.pdf Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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AOD2146 Sanken Electric USA Inc. AOD2146.pdf Description: 40V N-CHANNEL ALPHASGT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
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AOD32326 Sanken Electric USA Inc. AOD32326.pdf Description: 30V N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
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AS01A AS01A Sanken Electric USA Inc. eu2z_ds_en.pdf Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS01AV AS01AV Sanken Electric USA Inc. eu2z_ds_en.pdf Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS01AV0 AS01AV0 Sanken Electric USA Inc. eu2z_ds_en.pdf Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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AS01AV1 AS01AV1 Sanken Electric USA Inc. eu2z_ds_en.pdf Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS01AWK AS01AWK Sanken Electric USA Inc. eu2z_ds_en.pdf Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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AS01AWS AS01AWS Sanken Electric USA Inc. eu2z_ds_en.pdf Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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AU01AV0 AU01AV0 Sanken Electric USA Inc. au01a_ds_en.pdf Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+56.40 грн
100+37.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AU01AV0 AU01AV0 Sanken Electric USA Inc. au01a_ds_en.pdf Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AU01AWK AU01AWK Sanken Electric USA Inc. au01a_ds_en.pdf Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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AU01ZV1 AU01ZV1 Sanken Electric USA Inc. au01z_ds_en.pdf Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2411 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AU01ZV1 AU01ZV1 Sanken Electric USA Inc. au01z_ds_en.pdf Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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AU01ZWS AU01ZWS Sanken Electric USA Inc. au01z_ds_en.pdf Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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AU02AV1 AU02AV1 Sanken Electric USA Inc. au02a_ds_en.pdf Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AU02AV1 AU02AV1 Sanken Electric USA Inc. au02a_ds_en.pdf Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2873 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AU02AWK AU02AWK Sanken Electric USA Inc. au02a_ds_en.pdf Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AU02V1 AU02V1 Sanken Electric USA Inc. au02_ds_en.pdf Description: DIODE GEN PURP 400V 800MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
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AU02V1 AU02V1 Sanken Electric USA Inc. au02_ds_en.pdf Description: DIODE GEN PURP 400V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BL0202B Sanken Electric USA Inc. bl0200c_ds_en.pdf Description: LED DRIVER IC FOR LED BACKLIGHTS
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 100kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Lighting
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 18-SOP
Dimming: Analog, PWM
Voltage - Supply (Min): 8.6V
Voltage - Supply (Max): 20V
Part Status: Active
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BR206 BR206 Sanken Electric USA Inc. br206_ds_en.pdf Description: DC DC CONVERTER 0.75-3.63V 73W
Packaging: Tape & Reel (TR)
Features: Remote On/Off, OCP
Package / Case: 10-SMD Module
Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 7V
Efficiency: 94.6%
Current - Output (Max): 20A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.75 ~ 3.63V
Control Features: Enable, Active High
Power (Watts): 73 W
Number of Outputs: 1
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BR206 BR206 Sanken Electric USA Inc. br206_ds_en.pdf Description: DC DC CONVERTER 0.75-3.63V 73W
Packaging: Cut Tape (CT)
Features: Remote On/Off, OCP
Package / Case: 10-SMD Module
Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 7V
Efficiency: 94.6%
Current - Output (Max): 20A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.75 ~ 3.63V
Control Features: Enable, Active High
Power (Watts): 73 W
Number of Outputs: 1
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+1432.46 грн
5+1368.98 грн
10+1358.33 грн
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BR301 BR301 Sanken Electric USA Inc. br301_ds_en.pdf Description: DC DC CONVERTER 3.3V 3W
Packaging: Bulk
Features: OCP, OTP
Package / Case: 4-DIP Module
Size / Dimension: 0.55" L x 0.55" W x 0.39" H (14.0mm x 14.0mm x 10.0mm)
Mounting Type: Through Hole
Type: Non-Isolated PoL Module
Operating Temperature: -20°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 30V
Efficiency: 87%
Current - Output (Max): 1A
Voltage - Input (Min): 8V
Voltage - Output 1: 3.3V
Power (Watts): 3 W
Number of Outputs: 1
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+267.39 грн
Мінімальне замовлення: 2
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CTLD-4204S Sanken Electric USA Inc. ctld-4204s_ds_en.pdf Description: DIODE ARRAY GP 400V 20A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
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CTNS-4606S Sanken Electric USA Inc. ctns-4606s_ds_en.pdf Description: DIODE ARRAY GP 600V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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CTXS-4603S Sanken Electric USA Inc. ctxs-4603s_ds_en.pdf Description: ULTRAFAST RECOVERY DIODE (FRAME)
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
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CTXS-5306S Sanken Electric USA Inc. ctxs-5306s_ds_en.pdf Description: ULTRAFAST RECOVERY DIODE (FRAME)
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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CTXS-6603S Sanken Electric USA Inc. ctxs-6603s_ds_en.pdf Description: DIODE ARRAY GP 300V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
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DKG1020 DKG1020 Sanken Electric USA Inc. dkg1020_ds_en.pdf Description: LOW RON & GATE THRESHOLD MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 42A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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DKI04046 DKI04046 Sanken Electric USA Inc. dki04046_ds_en.pdf Description: MOSFET N-CH 40V 48A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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DKI04046 DKI04046 Sanken Electric USA Inc. dki04046_ds_en.pdf Description: MOSFET N-CH 40V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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DKI06075 DKI06075 Sanken Electric USA Inc. dki06075_ds_en.pdf Description: MOSFET N-CH 60V 48A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 34A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
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DKI06075 DKI06075 Sanken Electric USA Inc. dki06075_ds_en.pdf Description: MOSFET N-CH 60V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 34A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
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DKI10751 DKI10751 Sanken Electric USA Inc. dki10751_ds_en.pdf Description: MOSFET N-CH 100V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 70.4mOhm @ 7.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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DKI10751 DKI10751 Sanken Electric USA Inc. dki10751_ds_en.pdf Description: MOSFET N-CH 100V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 70.4mOhm @ 7.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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EG01C EG01C Sanken Electric USA Inc. eg01c_ds_en.pdf Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CV EG01CV Sanken Electric USA Inc. eg01c_ds_en.pdf Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CV0 EG01CV0 Sanken Electric USA Inc. eg01c_ds_en.pdf Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CV1 EG01CV1 Sanken Electric USA Inc. eg01c_ds_en.pdf Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CV1 EG01CV1 Sanken Electric USA Inc. eg01c_ds_en.pdf Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CW EG01CW Sanken Electric USA Inc. eg01c_ds_en.pdf Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EK 04 EK 04 Sanken Electric USA Inc. ek%2004_ds_en.pdf Description: DIODE SCHOTTKY 40V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
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EK 04W EK 04W Sanken Electric USA Inc. ek%2004_ds_en.pdf Description: DIODE SCHOTTKY 40V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
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EK 06 Sanken Electric USA Inc. ek%2006_ds_en.pdf Description: DIODE SCHOTTKY 60V 700MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 700 mA
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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EL 1V1 EL 1V1 Sanken Electric USA Inc. el%201_ds_en.pdf Description: DIODE GEN PURP 400V 1.5A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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2SK4161D 2sk4161d_ds_en.pdf
2SK4161D
Виробник: Sanken Electric USA Inc.
Description: MOS FET 60V/100A/0.0038
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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AB01BV1 ab01b_ds_en.pdf
AB01BV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 2604 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AB01BV1 ab01b_ds_en.pdf
AB01BV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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AG01AV1 ag01a_ds_en.pdf
AG01AV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 600 mA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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AG01AV1 ag01a_ds_en.pdf
AG01AV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 600 mA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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AG01AWK ag01a_ds_en.pdf
AG01AWK
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 600 mA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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AK 06 ak%2006_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 60V 700MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 700 mA
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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AL01Z al01z_ds_en.pdf
AL01Z
Виробник: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AL01ZV0 al01z_ds_en.pdf
AL01ZV0
Виробник: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AL01ZV1 al01z_ds_en.pdf
AL01ZV1
Виробник: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AL01ZV1 al01z_ds_en.pdf
AL01ZV1
Виробник: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AL01ZWK al01z_ds_en.pdf
AL01ZWK
Виробник: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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AM01AWK am01a_ds_en.pdf
AM01AWK
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AM01JB am01jb_ds_en.pdf
AM01JB
Виробник: Sanken Electric USA Inc.
Description: HIGH VOLTAGE RECTIFIER DIODE (AX
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 10mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 750 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 750 V
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AM01ZWS am01z_ds_en.pdf
AM01ZWS
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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AOD2146 AOD2146.pdf
Виробник: Sanken Electric USA Inc.
Description: 40V N-CHANNEL ALPHASGT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
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AOD32326 AOD32326.pdf
Виробник: Sanken Electric USA Inc.
Description: 30V N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
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AS01A eu2z_ds_en.pdf
AS01A
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS01AV eu2z_ds_en.pdf
AS01AV
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS01AV0 eu2z_ds_en.pdf
AS01AV0
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS01AV1 eu2z_ds_en.pdf
AS01AV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS01AWK eu2z_ds_en.pdf
AS01AWK
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS01AWS eu2z_ds_en.pdf
AS01AWS
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AU01AV0 au01a_ds_en.pdf
AU01AV0
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+56.40 грн
100+37.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AU01AV0 au01a_ds_en.pdf
AU01AV0
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AU01AWK au01a_ds_en.pdf
AU01AWK
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AU01ZV1 au01z_ds_en.pdf
AU01ZV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2411 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AU01ZV1 au01z_ds_en.pdf
AU01ZV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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AU01ZWS au01z_ds_en.pdf
AU01ZWS
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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AU02AV1 au02a_ds_en.pdf
AU02AV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AU02AV1 au02a_ds_en.pdf
AU02AV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2873 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AU02AWK au02a_ds_en.pdf
AU02AWK
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AU02V1 au02_ds_en.pdf
AU02V1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 800MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
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AU02V1 au02_ds_en.pdf
AU02V1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BL0202B bl0200c_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: LED DRIVER IC FOR LED BACKLIGHTS
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 100kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Lighting
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 18-SOP
Dimming: Analog, PWM
Voltage - Supply (Min): 8.6V
Voltage - Supply (Max): 20V
Part Status: Active
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BR206 br206_ds_en.pdf
BR206
Виробник: Sanken Electric USA Inc.
Description: DC DC CONVERTER 0.75-3.63V 73W
Packaging: Tape & Reel (TR)
Features: Remote On/Off, OCP
Package / Case: 10-SMD Module
Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 7V
Efficiency: 94.6%
Current - Output (Max): 20A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.75 ~ 3.63V
Control Features: Enable, Active High
Power (Watts): 73 W
Number of Outputs: 1
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BR206 br206_ds_en.pdf
BR206
Виробник: Sanken Electric USA Inc.
Description: DC DC CONVERTER 0.75-3.63V 73W
Packaging: Cut Tape (CT)
Features: Remote On/Off, OCP
Package / Case: 10-SMD Module
Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 7V
Efficiency: 94.6%
Current - Output (Max): 20A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.75 ~ 3.63V
Control Features: Enable, Active High
Power (Watts): 73 W
Number of Outputs: 1
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1432.46 грн
5+1368.98 грн
10+1358.33 грн
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BR301 br301_ds_en.pdf
BR301
Виробник: Sanken Electric USA Inc.
Description: DC DC CONVERTER 3.3V 3W
Packaging: Bulk
Features: OCP, OTP
Package / Case: 4-DIP Module
Size / Dimension: 0.55" L x 0.55" W x 0.39" H (14.0mm x 14.0mm x 10.0mm)
Mounting Type: Through Hole
Type: Non-Isolated PoL Module
Operating Temperature: -20°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 30V
Efficiency: 87%
Current - Output (Max): 1A
Voltage - Input (Min): 8V
Voltage - Output 1: 3.3V
Power (Watts): 3 W
Number of Outputs: 1
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.39 грн
Мінімальне замовлення: 2
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CTLD-4204S ctld-4204s_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE ARRAY GP 400V 20A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
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CTNS-4606S ctns-4606s_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE ARRAY GP 600V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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CTXS-4603S ctxs-4603s_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: ULTRAFAST RECOVERY DIODE (FRAME)
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
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CTXS-5306S ctxs-5306s_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: ULTRAFAST RECOVERY DIODE (FRAME)
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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CTXS-6603S ctxs-6603s_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE ARRAY GP 300V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
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DKG1020 dkg1020_ds_en.pdf
DKG1020
Виробник: Sanken Electric USA Inc.
Description: LOW RON & GATE THRESHOLD MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 42A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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DKI04046 dki04046_ds_en.pdf
DKI04046
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 40V 48A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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DKI04046 dki04046_ds_en.pdf
DKI04046
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 40V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
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DKI06075 dki06075_ds_en.pdf
DKI06075
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 60V 48A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 34A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
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DKI06075 dki06075_ds_en.pdf
DKI06075
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 60V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 34A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
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DKI10751 dki10751_ds_en.pdf
DKI10751
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 100V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 70.4mOhm @ 7.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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DKI10751 dki10751_ds_en.pdf
DKI10751
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 100V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 70.4mOhm @ 7.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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EG01C eg01c_ds_en.pdf
EG01C
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CV eg01c_ds_en.pdf
EG01CV
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CV0 eg01c_ds_en.pdf
EG01CV0
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CV1 eg01c_ds_en.pdf
EG01CV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CV1 eg01c_ds_en.pdf
EG01CV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EG01CW eg01c_ds_en.pdf
EG01CW
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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EK 04 ek%2004_ds_en.pdf
EK 04
Виробник: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
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EK 04W ek%2004_ds_en.pdf
EK 04W
Виробник: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
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EK 06 ek%2006_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 60V 700MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 700 mA
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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EL 1V1 el%201_ds_en.pdf
EL 1V1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.5A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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