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EL 1V1 EL 1V1 Sanken Electric USA Inc. el%201_ds_en.pdf Description: DIODE GEN PURP 400V 1.5A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EM01AV1 EM01AV1 Sanken Electric USA Inc. em01a_ds_en.pdf Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
EM01AV1 EM01AV1 Sanken Electric USA Inc. em01a_ds_en.pdf Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
4+84.36 грн
10+50.88 грн
100+33.44 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EM01V1 EM01V1 Sanken Electric USA Inc. em01_ds_en.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EM01V1 EM01V1 Sanken Electric USA Inc. em01_ds_en.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 614 шт:
термін постачання 21-31 дні (днів)
4+84.36 грн
10+50.88 грн
100+33.44 грн
500+24.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EM1B Sanken Electric USA Inc. em1b_ds_en.pdf Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1BV Sanken Electric USA Inc. em1b_ds_en.pdf Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1BV0 Sanken Electric USA Inc. em1b_ds_en.pdf Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1BV1 EM 1BV1 Sanken Electric USA Inc. em1b_ds_en.pdf Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1BV1 EM 1BV1 Sanken Electric USA Inc. em1b_ds_en.pdf Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
на замовлення 1703 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EM1C Sanken Electric USA Inc. em1c_ds_en.pdf Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1CV Sanken Electric USA Inc. em1c_ds_en.pdf Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1CV0 Sanken Electric USA Inc. em1c_ds_en.pdf Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1CV1 EM 1CV1 Sanken Electric USA Inc. em1c_ds_en.pdf Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1CV1 EM 1CV1 Sanken Electric USA Inc. em1c_ds_en.pdf Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 2BV1 EM 2BV1 Sanken Electric USA Inc. em2b_ds_en.pdf Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 816 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EM 2BV1 EM 2BV1 Sanken Electric USA Inc. em2b_ds_en.pdf Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 2V1 EM 2V1 Sanken Electric USA Inc. em2_ds_en.pdf Description: DIODE GEN PURP 400V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1247 шт:
термін постачання 21-31 дні (днів)
6+62.87 грн
10+52.72 грн
100+36.52 грн
500+28.63 грн
1000+24.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EM 2V1 EM 2V1 Sanken Electric USA Inc. em2_ds_en.pdf Description: DIODE GEN PURP 400V 1.2A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+13.49 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
ES 1F Sanken Electric USA Inc. es1f_ds_en.pdf Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
ES 1FV Sanken Electric USA Inc. es1f_ds_en.pdf Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
ES 1FV0 Sanken Electric USA Inc. es1f_ds_en.pdf Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
ES 1FV1 ES 1FV1 Sanken Electric USA Inc. es1f_ds_en.pdf Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
ES 1FV1 ES 1FV1 Sanken Electric USA Inc. es1f_ds_en.pdf Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01 Sanken Electric USA Inc. eu01_ds_en.pdf Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01V Sanken Electric USA Inc. eu01_ds_en.pdf Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01V0 Sanken Electric USA Inc. eu01_ds_en.pdf Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01V1 Sanken Electric USA Inc. eu01_ds_en.pdf Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01W Sanken Electric USA Inc. eu01_ds_en.pdf Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01Z Sanken Electric USA Inc. eu01z_ds_en.pdf Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01ZV Sanken Electric USA Inc. eu01z_ds_en.pdf Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01ZV0 Sanken Electric USA Inc. eu01z_ds_en.pdf Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01ZV1 Sanken Electric USA Inc. eu01z_ds_en.pdf Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01ZW Sanken Electric USA Inc. eu01z_ds_en.pdf Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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EU02V0 Sanken Electric USA Inc. eu02_ds_en.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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EU1Z Sanken Electric USA Inc. eu1z_ds_en.pdf Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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EU 1ZV Sanken Electric USA Inc. eu1z_ds_en.pdf Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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EU 1ZV0 Sanken Electric USA Inc. eu1z_ds_en.pdf Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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EU 1ZV1 Sanken Electric USA Inc. eu1z_ds_en.pdf Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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FGF65A4H Sanken Electric USA Inc. fgf65a4h_ds_en.pdf Description: FIELD STOP IGBT WITH FRD 650V/40
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.37V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 700µJ (on), 600µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
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FGF65A4L Sanken Electric USA Inc. fgf65a4l_ds_en.pdf Description: FIELD STOP IGBT WITH FRD 650V/40
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 900µJ (on), 900µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
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FGM603 FGM603 Sanken Electric USA Inc. fgm603_ds_en.pdf Description: IGBT 600V 30A TO-3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 130ns/340ns
Test Condition: 300V, 30A
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 60 W
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FKI06190 FKI06190 Sanken Electric USA Inc. fki06190_ds_en.pdf Description: MOSFET N-CH 60V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 19.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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FKI10531 FKI10531 Sanken Electric USA Inc. fki10531_ds_en.pdf Description: MOSFET N-CH 100V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 11.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 25 V
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FKP250A FKP250A Sanken Electric USA Inc. fkp250a_ds_en.pdf Description: MOSFET N-CH 250V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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FKP252 FKP252 Sanken Electric USA Inc. fkp252_ds_en.pdf Description: MOSFET N-CH 250V 25A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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FKP253 FKP253 Sanken Electric USA Inc. fkp253_ds_en.pdf Description: MOSFET N-CH 250V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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FKP300A FKP300A Sanken Electric USA Inc. fkp300a_ds_en.pdf Description: MOSFET N-CH 300V 30A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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FKV460S Sanken Electric USA Inc. fkv460s_ds_en.pdf Description: MOSFET 40V/60A/0.007
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
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FKV550N FKV550N Sanken Electric USA Inc. fkv550n_ds_en.pdf Description: MOSFET N-CH 50V 50A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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FKV550T FKV550T Sanken Electric USA Inc. fkv550t_ds_en.pdf Description: MOSFET N-CH 50V 50A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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FMB-24H FMB-24H Sanken Electric USA Inc. fmb-24h_ds_en.pdf Description: DIODE ARRAY SCHOTTKY 40V TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 7.5 mA @ 40 V
на замовлення 4021 шт:
термін постачання 21-31 дні (днів)
3+112.21 грн
10+96.48 грн
100+75.25 грн
500+58.33 грн
1000+46.05 грн
2000+42.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FMB-29 FMB-29 Sanken Electric USA Inc. fmb-29_ds_en.pdf Description: DIODE ARR SCHOTT 90V 4A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 mA @ 90 V
на замовлення 6080 шт:
термін постачання 21-31 дні (днів)
5+71.62 грн
10+56.33 грн
100+43.80 грн
500+34.84 грн
1000+28.38 грн
2000+26.72 грн
5000+25.03 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FMB-G24H FMB-G24H Sanken Electric USA Inc. fmb-g24h_ds_en.pdf Description: DIODE SCHOTTKY 40V 10A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 mA @ 40 V
на замовлення 1701 шт:
термін постачання 21-31 дні (днів)
4+83.56 грн
10+65.67 грн
100+51.10 грн
500+40.65 грн
1000+33.11 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FMCA-11065 FMCA-11065 Sanken Electric USA Inc. fmca-11065_ds_en.pdf Description: DIODE SIL CARB 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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FMCA-22065 FMCA-22065 Sanken Electric USA Inc. fmca-22065_ds_en.pdf Description: DIODE SIL CARB 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
1+684.40 грн
10+564.87 грн
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FMD-4204S FMD-4204S Sanken Electric USA Inc. fmd-4204s_ds_en.pdf Description: DIODE ARRAY GP 400V 20A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
2+292.86 грн
10+237.03 грн
100+191.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FMD-4206S FMD-4206S Sanken Electric USA Inc. fmd-4206s_ds_en.pdf Description: DIODE ARRAY GP 600V 20A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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FMD-G26S FMD-G26S Sanken Electric USA Inc. fmd-g26s_ds_en.pdf Description: DIODE GEN PURP 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
4+91.52 грн
10+55.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FMEN-210A FMEN-210A Sanken Electric USA Inc. fmen-210a_ds_en.pdf Description: DIODE ARR SCHOTT 100V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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EL 1V1 el%201_ds_en.pdf
EL 1V1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.5A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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EM01AV1 em01a_ds_en.pdf
EM01AV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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EM01AV1 em01a_ds_en.pdf
EM01AV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.36 грн
10+50.88 грн
100+33.44 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EM01V1 em01_ds_en.pdf
EM01V1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EM01V1 em01_ds_en.pdf
EM01V1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 614 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.36 грн
10+50.88 грн
100+33.44 грн
500+24.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EM1B em1b_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1BV em1b_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1BV0 em1b_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1BV1 em1b_ds_en.pdf
EM 1BV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1BV1 em1b_ds_en.pdf
EM 1BV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
на замовлення 1703 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EM1C em1c_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1CV em1c_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1CV0 em1c_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1CV1 em1c_ds_en.pdf
EM 1CV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 1CV1 em1c_ds_en.pdf
EM 1CV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 2BV1 em2b_ds_en.pdf
EM 2BV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 816 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+56.40 грн
100+37.26 грн
500+27.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EM 2BV1 em2b_ds_en.pdf
EM 2BV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
EM 2V1 em2_ds_en.pdf
EM 2V1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+62.87 грн
10+52.72 грн
100+36.52 грн
500+28.63 грн
1000+24.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EM 2V1 em2_ds_en.pdf
EM 2V1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.2A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+13.49 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
ES 1F es1f_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
ES 1FV es1f_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
ES 1FV0 es1f_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
ES 1FV1 es1f_ds_en.pdf
ES 1FV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
ES 1FV1 es1f_ds_en.pdf
ES 1FV1
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01 eu01_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01V eu01_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01V0 eu01_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01V1 eu01_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01W eu01_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01Z eu01z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01ZV eu01z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01ZV0 eu01z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01ZV1 eu01z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU01ZW eu01z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
EU02V0 eu02_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
EU1Z eu1z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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EU 1ZV eu1z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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EU 1ZV0 eu1z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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EU 1ZV1 eu1z_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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FGF65A4H fgf65a4h_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: FIELD STOP IGBT WITH FRD 650V/40
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.37V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 700µJ (on), 600µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
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FGF65A4L fgf65a4l_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: FIELD STOP IGBT WITH FRD 650V/40
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 900µJ (on), 900µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
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FGM603 fgm603_ds_en.pdf
FGM603
Виробник: Sanken Electric USA Inc.
Description: IGBT 600V 30A TO-3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 130ns/340ns
Test Condition: 300V, 30A
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 60 W
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FKI06190 fki06190_ds_en.pdf
FKI06190
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 60V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 19.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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FKI10531 fki10531_ds_en.pdf
FKI10531
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 100V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 11.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 25 V
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FKP250A fkp250a_ds_en.pdf
FKP250A
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 250V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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FKP252 fkp252_ds_en.pdf
FKP252
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 250V 25A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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FKP253 fkp253_ds_en.pdf
FKP253
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 250V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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FKP300A fkp300a_ds_en.pdf
FKP300A
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 300V 30A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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FKV460S fkv460s_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: MOSFET 40V/60A/0.007
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
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FKV550N fkv550n_ds_en.pdf
FKV550N
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 50V 50A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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FKV550T fkv550t_ds_en.pdf
FKV550T
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 50V 50A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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FMB-24H fmb-24h_ds_en.pdf
FMB-24H
Виробник: Sanken Electric USA Inc.
Description: DIODE ARRAY SCHOTTKY 40V TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 7.5 mA @ 40 V
на замовлення 4021 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.21 грн
10+96.48 грн
100+75.25 грн
500+58.33 грн
1000+46.05 грн
2000+42.98 грн
Мінімальне замовлення: 3
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FMB-29 fmb-29_ds_en.pdf
FMB-29
Виробник: Sanken Electric USA Inc.
Description: DIODE ARR SCHOTT 90V 4A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 mA @ 90 V
на замовлення 6080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.62 грн
10+56.33 грн
100+43.80 грн
500+34.84 грн
1000+28.38 грн
2000+26.72 грн
5000+25.03 грн
Мінімальне замовлення: 5
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FMB-G24H fmb-g24h_ds_en.pdf
FMB-G24H
Виробник: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 10A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 mA @ 40 V
на замовлення 1701 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.56 грн
10+65.67 грн
100+51.10 грн
500+40.65 грн
1000+33.11 грн
Мінімальне замовлення: 4
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FMCA-11065 fmca-11065_ds_en.pdf
FMCA-11065
Виробник: Sanken Electric USA Inc.
Description: DIODE SIL CARB 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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FMCA-22065 fmca-22065_ds_en.pdf
FMCA-22065
Виробник: Sanken Electric USA Inc.
Description: DIODE SIL CARB 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+684.40 грн
10+564.87 грн
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FMD-4204S fmd-4204s_ds_en.pdf
FMD-4204S
Виробник: Sanken Electric USA Inc.
Description: DIODE ARRAY GP 400V 20A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+292.86 грн
10+237.03 грн
100+191.76 грн
Мінімальне замовлення: 2
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FMD-4206S fmd-4206s_ds_en.pdf
FMD-4206S
Виробник: Sanken Electric USA Inc.
Description: DIODE ARRAY GP 600V 20A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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FMD-G26S fmd-g26s_ds_en.pdf
FMD-G26S
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.52 грн
10+55.48 грн
Мінімальне замовлення: 4
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FMEN-210A fmen-210a_ds_en.pdf
FMEN-210A
Виробник: Sanken Electric USA Inc.
Description: DIODE ARR SCHOTT 100V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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