Виробник: GOODWORK
Description: 30V80A9m@4.5VTO-252

Виробник: Vishay
Film Capacitors MKP1848H 3 F 10 800V=

Виробник: NCE Power Semiconductor
Transistor N-Channel MOSFET; 30V; 20V; 10mOhm; 80A; 83W; -55°C ~ 175°C; NCE3080K NCE POWER TNCE3080k
кількість в упаковці: 50 шт

Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V

Виробник: ROHM Semiconductor
SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS

Виробник: ROHM - Japan
SiC-N-Ch 1200V 31A 165W 0,104T TO247 SCT3080KLGC11 : Rohm SCT3080KLGC11 TSCT3080klgc11
кількість в упаковці: 2 шт

Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Qualification: AEC-Q101

Виробник: ROHM Semiconductor
SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N

Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V

Виробник: ROHM Semiconductor
SiC MOSFETs TO247 1.2KV 31A N-CH SIC

Виробник: ROHM Semiconductor
SiC MOSFETs TO247 1.2KV 31A N-CH SIC

Виробник: ROHM Semiconductor
SiC MOSFETs Transistor SiC MOSFET 1200V 80m 3rd Gen TO-247-4L

Виробник: ROHM Semiconductor
SiC MOSFETs TO263 1.2KV 30A N-CH SIC

Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V

Виробник: KEYSTONE
Description: KEYSTONE - 3080 - BATTERY CONTACT, POSITION, 12MM CELL, SURFACE MT
tariffCode: 85369095
euEccn: NLR
rohsCompliant: YES
Anzahl der Batterien/Akkus: 1
RoHS Compliant: Yes
Zur Verwendung mit: Coin Cell - 12mm
Kontaktüberzug: Tin Plated Contacts
hazardous: false
rohsPhthalatesCompliant: YES
Kontaktmaterial: Phosphor Bronze
Passende Batterie-/Akkugröße: Coin Cell - 12mm
isCanonical: Y
Art des Zubehörs: Coin Cell Retainer Contact
Batteriehaltermontage: PCB
Batterie-/Akkuanschlüsse: SMD
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
directShipCharge: 25

Виробник: Keystone Electronics
Description: BATTERY RETAINER COIN 12MM SMD
Packaging: Bulk
Battery Cell Size: Coin, 12.0mm
Number of Cells: 1
Mounting Type: PCB, Surface Mount
Style: Retainer
Termination Style: SMD (SMT) Tab
Height Above Board: 0.125" (3.17mm)
Battery Series: 1216, 1220, 1225
Battery Type, Function: Coin Cell, Retainer

Транзистори > Польові N-канальні

Виробник: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: Nonstandard
Size / Dimension: 0.313" L x 0.115" W (7.94mm x 2.92mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA

Виробник: Delevan
RF Inductors - SMD 330uH 10% 7ohm Unshielded SMT Ind

Виробник: Conductive Containers, Inc.
Description: MAILER7 X 5 X 1.5
Features: Conductive
Packaging: Box
Material: Plastic
Type: Box
Dimensions - Overall: 7.00" L x 5.00" W x 1.50" H (177.8mm x 127.0mm x 38.1mm)
Usage: Storage, Transport

Виробник: Luminus Devices
White LEDs

Виробник: Luminus Devices
White LEDs

Виробник: Luminus Devices
White LEDs

Виробник: Delevan
RF Inductors - SMD M83446/25-13F, Surface Mount, Inductor, 330 uH , +/- 10%

Виробник: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: Nonstandard
Size / Dimension: 0.320" L x 0.125" W (8.13mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA

Виробник: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.325" L x 0.125" W (8.26mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA

Виробник: Delevan
RF Inductors - SMD M83446/33-13F, Surface Mount, Unshielded Inductor, 330 uH , +/- 10%

Виробник: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 3UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 1.083" (27.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.012" (25.70mm)
Part Status: Active
Capacitance: 3 µF
ESR (Equivalent Series Resistance): 12.3 mOhms
Size / Dimension: 1.260" L x 0.591" W (32.00mm x 15.00mm)

Виробник: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 30UF 10% 800VDC RADIAL
Packaging: Tray
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5.6 MOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)

Виробник: Vishay
Film Capacitors MKP1848H 30 F 10 800V=

Виробник: Vishay
Film Capacitors MKP1848H 30 F 10 800V=

Виробник: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 30UF 10% 800VDC RADIAL
Packaging: Tray
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Package / Case: Radial - 4 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5 mOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)

Виробник: Luminus Devices
White LEDs

Виробник: Luminus Devices
White LEDs

Виробник: Luminus Devices
White LEDs

Виробник: Eaton Electrical
Circuit Breakers NG 310+ 3P MCS, 800A, ENG TAPPED TERMS.

Виробник: Eaton Electrical
Circuit Breakers NG 3P 800A MCS W/110-240VAC ST

Виробник: Eaton Electrical
Circuit Breakers NG 800A 3P MCS MOD FOR WALK BEAM

Виробник: Eaton Electrical
Circuit Breakers NG 310+ 3P MCS, 800A METRIC TAPPED TERMS

Виробник: Eaton Tripp Lite
Description: P3080KIT PARALLELING CABLE KIT
Packaging: Bulk
Part Status: Active
For Use With/Related Products: UPS Systems
Accessory Type: Mounting Kit

Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement

Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement

Виробник: Rohm Semiconductor
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V

Виробник: Rohm Semiconductor
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101

Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement

Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V

Виробник: Luminus Devices
White LEDs

Виробник: Luminus Devices
White LEDs

Виробник: NCE
30V 80A 83W 10m?@5V,24A 3V@250uA 1 N-channel MOSFETs TO-252-2(DPAK) Транзистори

Виробник: Altera
FPGA - Field Programmable Gate Array