Виробник: KLS
Роз'єми, клеми, з'єднувачі > Міжплатні з'єднувачі
Функціональний опис: Штирі однорядні на плату прямі, 40 контактів, крок 1,27мм, 1А, покриття: золото 0.8u
Штирі або гнізда: Штирі (вилки)
Крок: 1,27 mm
К-сть рядів: однорядні
К-сть контактів: 40

Виробник: KLS
Роз'єми, клеми, з'єднувачі > Міжплатні з'єднувачі
Функціональний опис: Штирі однорядні на плату прямі, 40 контактів, крок 2,54мм, 3А, покриття: золото 0.8u
Штирі або гнізда: Штирі (вилки)
Крок: 2,54 mm
К-сть рядів: однорядні
К-сть контактів: 40

Ізоляційні матеріали
Група: Трубки термоусадочні
Опис: Термоусадка в наборі. Колір: червоний, зелений, жовтий, синій, чорний, прозорий, білий. Розміри: 1,0мм, 1,5мм, 2,5мм, 3,0мм, 5,0мм. По 4 шт довжиною 10см кожного кольору і розміру.
Розмір: 1,0мм, 1,5мм, 2,5мм, 3,0мм, 5,0мм

Виробник: BothHand
2000

Виробник: LB
02+

Виробник: LB
2002 SMD

Виробник: LB
99+

Виробник: BothHand
1998

00+

Виробник: GROUP-TEK
0402

Виробник: LB
98

Виробник: ScioSense
Multiple Function Sensor Development Tools AS6040_ST_NS V1.0 ST Nucleo Shield

Виробник: Microchip Technology
EEPROM 1.7-3.6V, 1MHz, Ind Tmp, 5-SOT23

Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified

Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified

Виробник: TE Connectivity
Category: Heat Shrink Tubes
Description: Heat shrink sleeve; glued; 3: 1; 12mm; L: 1.2m; black; polyolefine
Operating temperature: -55...110°C
Manufacturer series: ATUM
Material: polyolefine
Colour: black
Conform to the norm: AMS DTL 23053/4; E85381
Length: 1.2m
Shrinkage temperature: 80°C
Type of cable accessories: heat shrink sleeve
Min. diameter before shrinking: 12mm
Diameter after shrinking: 4mm
Version: glued
Shrinking ratio: 3:1
кількість в упаковці: 1 шт

Виробник: TE Connectivity / Raychem
Heat Shrink Tubing & Sleeves HS-TBG 12MM 3:1 BK PRICE PER STICK

Виробник: TE Connectivity Raychem Cable Protection
Description: HEATSHRINK DUALWALL 12MM X 4'
Packaging: Bulk
Features: Adhesive Lined, Flame Retardant, Fluid Resistant
Color: Black
Material: Polyolefin (PO), Irradiated
Length: 4.00' (1.22m)
Type: Tubing, Semi-Flexible
Operating Temperature: -55°C ~ 110°C
Shrinkage Ratio: 3 to 1
Inner Diameter - Supplied: 0.472" (11.99mm)
Inner Diameter - Recovered: 0.157" (3.99mm)
Recovered Wall Thickness: 0.070" (1.78mm)
Shrink Temperature: 80°C
Part Status: Active
Storage/Refrigeration Temperature: 32°F ~ 95°F (0°C ~ 35°C)
Shelf Life: 60 Months

Виробник: TE Connectivity
Category: Heat Shrink Tubes
Description: Heat shrink sleeve; glued; 4: 1; 16mm; L: 1.2m; black; polyolefine
Operating temperature: -55...110°C
Manufacturer series: ATUM
Material: polyolefine
Colour: black
Conform to the norm: AMS DTL 23053/4; E85381
Length: 1.2m
Shrinkage temperature: 80°C
Type of cable accessories: heat shrink sleeve
Min. diameter before shrinking: 16mm
Diameter after shrinking: 4mm
Version: glued
Shrinking ratio: 4:1
кількість в упаковці: 1 шт

Виробник: TE Connectivity / Raychem
Heat Shrink Tubing & Sleeves HS-TBG 16MM / 4MM PRICE PER STICK

Виробник: TE Connectivity Raychem Cable Protection
Description: HEATSHRINK DUAL WALL 16MM X 4'
Packaging: Bulk
Features: Adhesive Lined, Flame Retardant, Fluid Resistant
Color: Black
Material: Polyolefin (PO), Irradiated
Length: 4.00' (1.22m)
Type: Tubing, Semi-Flexible
Operating Temperature: -55°C ~ 110°C
Shrinkage Ratio: 4 to 1
Inner Diameter - Supplied: 0.630" (16.00mm)
Inner Diameter - Recovered: 0.157" (3.99mm)
Recovered Wall Thickness: 0.070" (1.78mm)
Shrink Temperature: 80°C
Part Status: Active
Storage/Refrigeration Temperature: 32°F ~ 95°F (0°C ~ 35°C)
Shelf Life: 60 Months

Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 400V 1A 4SMDIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SMDIP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V

Виробник: Central Semiconductor
Bridge Rectifiers 400Vrrm 400Vr 280Vr 1.0A 50A Ifsm

Виробник: TE Connectivity / Raychem
Heat Shrink Tubing & Sleeves HS-TBG 6.4MM 2:1 BK PRICE PER STICK

Виробник: TE Connectivity / Raychem
Heat Shrink Tubing & Sleeves DWFR-12/4-0-STK Price Per 4FT STK

Виробник: TE Connectivity Raychem Cable Protection
Description: HEATSHRINK 0.63" X 4' BLACK
Packaging: Bulk
Features: Adhesive Lined, Flame Retardant
Color: Black
Material: Polyolefin (PO), Irradiated
Length: 4.00' (1.22m)
Type: Tubing, Semi-Flexible
Operating Temperature: -40°C ~ 110°C
Shrinkage Ratio: 4 to 1
Inner Diameter - Supplied: 0.630" (16.00mm)
Inner Diameter - Recovered: 0.157" (3.99mm)
Recovered Wall Thickness: 0.070" (1.78mm)
Shrink Temperature: 60°C
Part Status: Active
Storage/Refrigeration Temperature: 32°F ~ 95°F (0°C ~ 35°C)
Shelf Life: 60 Months

Виробник: TE Connectivity / Raychem
Heat Shrink Tubing & Sleeves DWFR-16/4-0-STK Price Per 4FT STK

Виробник: TE Connectivity Raychem Cable Protection
Description: DUAL WALL TUBING, FLAME RETARDAN
Packaging: Bag
Features: Adhesive Lined, Flame Retardant
Color: Black
Material: Polyolefin (PO), Irradiated, Halogen Free
Length: 4.00' (1.22m)
Type: Tubing, Semi-Flexible
Operating Temperature: -55°C ~ 110°C
Shrinkage Ratio: 3 to 1
Inner Diameter - Supplied: 0.472" (11.99mm)
Inner Diameter - Recovered: 0.157" (3.99mm)
Recovered Wall Thickness: 0.070" (1.78mm)
Shrink Temperature: 110°C
Part Status: Active
Storage/Refrigeration Temperature: 32°F ~ 95°F (0°C ~ 35°C)
Shelf Life: 60 Months

Виробник: TE Connectivity Raychem Cable Protection
Description: HEATSHRINK POLY 1/4"X4' BLK
Packaging: Bulk
Features: Adhesive Lined, Flame Retardant
Color: Black
Material: Polyolefin (PO)
Length: 4.00' (1.22m)
Type: Tubing, Flexible
Operating Temperature: -40°C ~ 110°C
Shrinkage Ratio: 3 to 1
Inner Diameter - Supplied: 0.250" (6.35mm)
Inner Diameter - Recovered: 0.080" (2.03mm)
Recovered Wall Thickness: 0.057" (1.45mm)
Shrink Temperature: 80°C
Part Status: Active
Shelf Life: 60 Months

Виробник: TE Connectivity / Raychem
Heat Shrink Tubing & Sleeves HS-TBG 6.4MM BK PRICE PER STICK

Виробник: TE Connectivity Raychem Cable Protection
Description: HEATSHRINK POLY 3/4"X4' BLK
Features: Adhesive Lined, Flame Retardant
Packaging: Bulk
Color: Black
Material: Polyolefin (PO)
Length: 4.00' (1.22m)
Type: Tubing, Flexible
Operating Temperature: -40°C ~ 110°C
Shrinkage Ratio: 3 to 1
Inner Diameter - Supplied: 0.750" (19.05mm)
Inner Diameter - Recovered: 0.230" (5.84mm)
Recovered Wall Thickness: 0.080" (2.03mm)
Shrink Temperature: 80°C
Shelf Life: 60 Months

Виробник: TE Connectivity / Raychem
Heat Shrink Tubing & Sleeves HS-TBG 19.1MM 3:1 BK PRICE PER STICK

Виробник: Display Visions
TFT Displays & Accessories ZIF connector 40p 0.5mm, top

Виробник: INVENTRONICS
AC-DC перетворювач; Кіл. вих. кан. = 1; Uвих1, В = 43; Рвих, Вт = 60; Uвх (AC), В = 90...305; Iвих1, А = 1,4; Габ. розм, мм = 150 ? 67.5 ? 36.5; ККД, % = 89; Тексп, °С = -35...+70; IP67, Активний PFC (0.95); 150x68x37mm

Виробник: Fairchild Semiconductor
Description: DIODE GEN PURP 400V 4A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V

Виробник: Fairchild Semiconductor
Description: DIODE GEN PURP 400V 6A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V

Виробник: Fairchild Semiconductor
Description: DIODE GEN PURP 400V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 400 V

Виробник: Fairchild Semiconductor
Description: DIODE GEN PURP 400V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V

Виробник: Analog Devices
RF Amplifier upscreen part for Space

Виробник: Analog Devices Inc.
Description: IC RF AMP GPS 50MHZ-3GHZ SOT89
Packaging: Strip
Package / Case: TO-243AA
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 5V
Gain: 15dB
Current - Supply: 88mA
Noise Figure: 3.5dB
P1dB: 18dBm
Supplier Device Package: SOT-89
Part Status: Active

Виробник: Analog Devices Inc.
Description: IC RF AMP GPS 50MHZ-3GHZ SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 5V
Gain: 15dB
Current - Supply: 88mA
Noise Figure: 3.5dB
P1dB: 18dBm
Supplier Device Package: SOT-89
Part Status: Active

Виробник: Analog Devices
RF Amplifier IF amp 15 dB Gain

Виробник: TE Connectivity
HTAT-16/4-0-STK Heat Shrink Tubes

Виробник: TE Connectivity Raychem Cable Protection
Description: HEATSHRINK 0.63" X 4' BLACK
Packaging: Bag
Features: Adhesive Lined, Flame Retardant, Fluid Resistant
Color: Black
Material: Polyolefin (PO), Irradiated
Length: 4.00' (1.22m)
Type: Tubing, Semi-Flexible
Operating Temperature: -55°C ~ 125°C
Shrinkage Ratio: 4 to 1
Inner Diameter - Supplied: 0.630" (16.00mm)
Inner Diameter - Recovered: 0.157" (3.99mm)
Recovered Wall Thickness: 0.068" (1.75mm)
Shrink Temperature: 80°C
Storage/Refrigeration Temperature: 32°F ~ 95°F (0°C ~ 35°C)
Shelf Life: 36 Months

Виробник: TE Connectivity
Heat Shrink Tubing & Sleeves HS-TBG 16/4MM BK PRICE PER STICK

Виробник: Samtec Inc.
Description: CONN IC DIP SOCKET 40POS TIN
Packaging: Tube
Features: Open Frame
Mounting Type: Through Hole
Type: DIP, 0.6" (15.24mm) Row Spacing
Operating Temperature: -55°C ~ 105°C
Number of Positions or Pins (Grid): 40 (2 x 20)
Termination: Solder
Housing Material: Polyester, Glass Filled
Pitch - Mating: 0.100" (2.54mm)
Contact Finish - Mating: Tin
Contact Material - Mating: Beryllium Copper
Pitch - Post: 0.100" (2.54mm)
Contact Finish - Post: Tin
Contact Material - Post: Brass
Part Status: Active

Виробник: Samtec
IC & Component Sockets ".100"" Screw Machine DIP Socket"

Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFET 100V N-CH HEXFET D2-PAK

Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFET 100V N-CH HEXFET D2-PAK

Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFET 200V N-CH HEXFET D2-PA

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Виробник: Vishay Semiconductors
MOSFET N-Chan 200V 18 Amp

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25