Результат пошуку "LLH6" : 73
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Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| STL86N3LLH6AG | STMicroelectronics |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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STL86N3LLH6AG | STMicroelectronics |
MOSFET Automotive-grade N-channel 30 V, 4 mOhm typ 80 A STripFET H6 Power MOSFET |
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| STL90N3LLH6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
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| STL90N3LLH6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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STL90N3LLH6 | STMicroelectronics |
MOSFET N-Ch 30V 0.0028 24A STripFET VI |
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STS5P3LLH6 | STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; STripFET™ H6; unipolar; -30V; -3.2A; 2.7W Type of transistor: P-MOSFET Technology: STripFET™ H6 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -20A Power dissipation: 2.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Kind of channel: enhanced |
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STS5P3LLH6 | STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; STripFET™ H6; unipolar; -30V; -3.2A; 2.7W Type of transistor: P-MOSFET Technology: STripFET™ H6 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -20A Power dissipation: 2.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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STT6N3LLH6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.75A Pulsed drain current: 24A Power dissipation: 1.6W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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STT6N3LLH6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.75A Pulsed drain current: 24A Power dissipation: 1.6W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
| STL86N3LLH6AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| STL86N3LLH6AG |
|
Виробник: STMicroelectronics
MOSFET Automotive-grade N-channel 30 V, 4 mOhm typ 80 A STripFET H6 Power MOSFET
MOSFET Automotive-grade N-channel 30 V, 4 mOhm typ 80 A STripFET H6 Power MOSFET
товар відсутній
| STL90N3LLH6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| STL90N3LLH6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| STS5P3LLH6 |
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Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; STripFET™ H6; unipolar; -30V; -3.2A; 2.7W
Type of transistor: P-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; STripFET™ H6; unipolar; -30V; -3.2A; 2.7W
Type of transistor: P-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| STS5P3LLH6 |
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Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; STripFET™ H6; unipolar; -30V; -3.2A; 2.7W
Type of transistor: P-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; STripFET™ H6; unipolar; -30V; -3.2A; 2.7W
Type of transistor: P-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| STT6N3LLH6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.75A
Pulsed drain current: 24A
Power dissipation: 1.6W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.75A
Pulsed drain current: 24A
Power dissipation: 1.6W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| STT6N3LLH6 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.75A
Pulsed drain current: 24A
Power dissipation: 1.6W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.75A
Pulsed drain current: 24A
Power dissipation: 1.6W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
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