Результат пошуку "Vn10" : > 180
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| VN1041432201J4C000 | Vishay | VN1041432201J4C000 |
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VN10A1500000G | Amphenol |
 Conn Terminal Block 10 POS 2.54mm Solder ST Thru-Hole 6A |
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| VN10A1500000G | Amphenol Anytek |
Pluggable Terminal Blocks TB RIS CLA 180D SOL |
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| VN10A1500000G | Amphenol |
VN10A1500000G |
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VN10K | Semelab (TT electronics) |
Trans MOSFET N-CH 60V 0.17A 3-Pin TO-18 |
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VN10K | Semelab |
Trans MOSFET N-CH 60V 0.17A 3-Pin TO-18 |
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| VN10K-QR-B | Semelab (TT electronics) |
Trans MOSFET N-CH 60V 0.17A |
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VN10KE | Semelab |
Trans MOSFET N-CH 60V 0.17A 3-Pin TO-18 |
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VN10KE | Vishay |
Trans MOSFET N-CH 60V 0.17A 3-Pin TO-206AC |
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| VN10KN3-G-P002 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: tape Kind of channel: enhanced |
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| VN10KN3-G-P002 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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VN10KN3-G-P002 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
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VN10KN3-G-P002 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
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VN10KN3-G-P002 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
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| VN10KN3-G-P003 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
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| VN10KN3-G-P003 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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VN10KN3-G-P003 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
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VN10KN3-G-P003 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
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VN10KN3-G-P003 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R |
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| VN10KN3-G-P013 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
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| VN10KN3-G-P013 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced кількість в упаковці: 1 шт |
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VN10KN3-G-P013 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo |
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| VN10KN3-G-P014 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
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| VN10KN3-G-P014 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced кількість в упаковці: 1 шт |
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| VN10KN3-G-P014 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo |
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VN10KN3-G-P014 | Microchip Technology |
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo |
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| VN10LE-E3 | Vishay |
Trans MOSFET N-CH Si 60V 0.38A 3-Pin TO-206AC |
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VN10LFTA | Diodes Zetex |
Trans MOSFET N-CH 60V 0.15A 3-Pin SOT-23 T/R |
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VN10LFTA | Diodes Zetex |
Trans MOSFET N-CH 60V 0.15A 3-Pin SOT-23 T/R |
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VN10LP | Diodes Zetex |
Trans MOSFET N-CH 60V 0.27A 3-Pin E-Line |
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VN10LPSTZ | Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V EP3SC BULK 4K |
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ECEA1VN100U | PANASONIC |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20% Mounting: THT Manufacturer series: SU Operating temperature: -40...85°C Kind of capacitor: bipolar Terminal pitch: 2mm Tolerance: ±20% Body dimensions: Ø5x11mm Type of capacitor: electrolytic Capacitance: 10µF Operating voltage: 35V DC Service life: 2000h Operating current: 43mA |
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ECEA1VN100U | PANASONIC |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20% Mounting: THT Manufacturer series: SU Operating temperature: -40...85°C Kind of capacitor: bipolar Terminal pitch: 2mm Tolerance: ±20% Body dimensions: Ø5x11mm Type of capacitor: electrolytic Capacitance: 10µF Operating voltage: 35V DC Service life: 2000h Operating current: 43mA кількість в упаковці: 10 шт |
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ECEA1VN100UB | PANASONIC |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20% Mounting: THT Manufacturer series: SU Operating temperature: -40...85°C Kind of capacitor: bipolar Terminal pitch: 5mm Tolerance: ±20% Body dimensions: Ø5x11mm Type of capacitor: electrolytic Capacitance: 10µF Operating voltage: 35V DC Service life: 2000h Operating current: 43mA |
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ECEA1VN100UB | PANASONIC |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20% Mounting: THT Manufacturer series: SU Operating temperature: -40...85°C Kind of capacitor: bipolar Terminal pitch: 5mm Tolerance: ±20% Body dimensions: Ø5x11mm Type of capacitor: electrolytic Capacitance: 10µF Operating voltage: 35V DC Service life: 2000h Operating current: 43mA кількість в упаковці: 2000 шт |
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ECEA1VN101U | PANASONIC |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20% Mounting: THT Manufacturer series: SU Operating temperature: -40...85°C Kind of capacitor: bipolar Terminal pitch: 5mm Tolerance: ±20% Body dimensions: Ø10x16mm Type of capacitor: electrolytic Capacitance: 100µF Operating voltage: 35V DC Service life: 2000h Operating current: 0.23A |
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ECEA1VN101U | PANASONIC |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20% Mounting: THT Manufacturer series: SU Operating temperature: -40...85°C Kind of capacitor: bipolar Terminal pitch: 5mm Tolerance: ±20% Body dimensions: Ø10x16mm Type of capacitor: electrolytic Capacitance: 100µF Operating voltage: 35V DC Service life: 2000h Operating current: 0.23A кількість в упаковці: 10 шт |
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ECEA1VN101UB | PANASONIC |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20% Mounting: THT Manufacturer series: SU Operating temperature: -40...85°C Kind of capacitor: bipolar Terminal pitch: 5mm Tolerance: ±20% Body dimensions: Ø10x16mm Type of capacitor: electrolytic Capacitance: 100µF Operating voltage: 35V DC Service life: 2000h Operating current: 0.23A |
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ECEA1VN101UB | PANASONIC |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20% Mounting: THT Manufacturer series: SU Operating temperature: -40...85°C Kind of capacitor: bipolar Terminal pitch: 5mm Tolerance: ±20% Body dimensions: Ø10x16mm Type of capacitor: electrolytic Capacitance: 100µF Operating voltage: 35V DC Service life: 2000h Operating current: 0.23A кількість в упаковці: 1000 шт |
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EKMQ161VN102MQ35S | Chemi-Con |
Aluminium Electrolytic Capacitors - Snap In 160volts 1000uF 25.4X35 |
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FM24VN10-G | INFINEON (CYPRESS) |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Case: SO8 Mounting: SMD Operating temperature: -40...85°C Clock frequency: 3.4MHz Kind of interface: serial Memory: 1Mb FRAM Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Interface: I2C Kind of memory: FRAM Memory organisation: 128kx8bit |
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FM24VN10-G | INFINEON (CYPRESS) |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Case: SO8 Mounting: SMD Operating temperature: -40...85°C Clock frequency: 3.4MHz Kind of interface: serial Memory: 1Mb FRAM Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Interface: I2C Kind of memory: FRAM Memory organisation: 128kx8bit кількість в упаковці: 1 шт |
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FM24VN10-GTR | INFINEON (CYPRESS) |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Case: SO8 Mounting: SMD Operating temperature: -40...85°C Clock frequency: 3.4MHz Kind of interface: serial Memory: 1Mb FRAM Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Interface: I2C Kind of memory: FRAM Memory organisation: 128kx8bit |
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FM25VN10-G | INFINEON (CYPRESS) |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8 Case: SO8 Mounting: SMD Operating temperature: -40...85°C Clock frequency: 40MHz Kind of interface: serial Memory: 1Mb FRAM Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Memory organisation: 128kx8bit |
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| M24749-IV-N-10-.282 | Glenair |
Antistatic Control Products GROUND STRAPS - BRAID CABLING EXTRUDING |
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MCIMX6L2DVN10AC | NXP Semiconductors |
Processors - Application Specialised i.MX 6SL ROM Perf Enhan |
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MCIMX6L2EVN10ABR | NXP Semiconductors |
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432 |
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MCIMX6L2EVN10AC | NXP Semiconductors |
Processors - Application Specialised i.MX 6SL ROM Perf Enhan |
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MCIMX6L2EVN10ACR | NXP Semiconductors |
Processors - Application Specialised i.MX 6SL ROM Perf Enhan |
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MCIMX6L3DVN10AB | NXP Semiconductors |
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432 |
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MCIMX6L7DVN10AB | NXP Semiconductors |
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432 |
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MCIMX6L7DVN10AC | NXP Semiconductors |
Processors - Application Specialised i.MX 6SL ROM Perf Enhan |
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MCIMX6L8DVN10ABR | NXP Semiconductors |
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432 |
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| VN10A1500000G |
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Виробник: Amphenol
Conn Terminal Block 10 POS 2.54mm Solder ST Thru-Hole 6A
Conn Terminal Block 10 POS 2.54mm Solder ST Thru-Hole 6A
товар відсутній
| VN10A1500000G |
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Виробник: Amphenol Anytek
Pluggable Terminal Blocks TB RIS CLA 180D SOL
Pluggable Terminal Blocks TB RIS CLA 180D SOL
товар відсутній
| VN10KN3-G-P002 |
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Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tape
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| VN10KN3-G-P002 |
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Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| VN10KN3-G-P002 |
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Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
товар відсутній
| VN10KN3-G-P002 |
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Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
товар відсутній
| VN10KN3-G-P002 |
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Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
товар відсутній
| VN10KN3-G-P003 |
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Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VN10KN3-G-P003 |
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Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| VN10KN3-G-P003 |
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Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
товар відсутній
| VN10KN3-G-P003 |
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Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
товар відсутній
| VN10KN3-G-P003 |
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Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 T/R
товар відсутній
| VN10KN3-G-P013 |
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Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
товар відсутній
| VN10KN3-G-P013 |
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Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| VN10KN3-G-P013 |
|
Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo
товар відсутній
| VN10KN3-G-P014 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
товар відсутній
| VN10KN3-G-P014 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| VN10KN3-G-P014 |
|
Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo
товар відсутній
| VN10KN3-G-P014 |
|
Виробник: Microchip Technology
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Ammo
товар відсутній
| ECEA1VN100U |
|
Виробник: PANASONIC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 2mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 43mA
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 2mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 43mA
товар відсутній
| ECEA1VN100U |
|
Виробник: PANASONIC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 2mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 43mA
кількість в упаковці: 10 шт
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 2mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 43mA
кількість в упаковці: 10 шт
товар відсутній
| ECEA1VN100UB |
|
Виробник: PANASONIC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 43mA
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 43mA
товар відсутній
| ECEA1VN100UB |
|
Виробник: PANASONIC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 43mA
кількість в упаковці: 2000 шт
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 10uF; 35VDC; Ø5x11mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø5x11mm
Type of capacitor: electrolytic
Capacitance: 10µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 43mA
кількість в упаковці: 2000 шт
товар відсутній
| ECEA1VN101U |
|
Виробник: PANASONIC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø10x16mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 0.23A
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø10x16mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 0.23A
товар відсутній
| ECEA1VN101U |
|
Виробник: PANASONIC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø10x16mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 0.23A
кількість в упаковці: 10 шт
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø10x16mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 0.23A
кількість в упаковці: 10 шт
товар відсутній
| ECEA1VN101UB |
|
Виробник: PANASONIC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø10x16mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 0.23A
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø10x16mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 0.23A
товар відсутній
| ECEA1VN101UB |
|
Виробник: PANASONIC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø10x16mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 0.23A
кількість в упаковці: 1000 шт
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; bipolar; THT; 100uF; 35VDC; Ø10x16mm; ±20%
Mounting: THT
Manufacturer series: SU
Operating temperature: -40...85°C
Kind of capacitor: bipolar
Terminal pitch: 5mm
Tolerance: ±20%
Body dimensions: Ø10x16mm
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 35V DC
Service life: 2000h
Operating current: 0.23A
кількість в упаковці: 1000 шт
товар відсутній
| EKMQ161VN102MQ35S |
|
Виробник: Chemi-Con
Aluminium Electrolytic Capacitors - Snap In 160volts 1000uF 25.4X35
Aluminium Electrolytic Capacitors - Snap In 160volts 1000uF 25.4X35
товар відсутній
| FM24VN10-G |
|
Виробник: INFINEON (CYPRESS)
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 3.4MHz
Kind of interface: serial
Memory: 1Mb FRAM
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 128kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 3.4MHz
Kind of interface: serial
Memory: 1Mb FRAM
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 128kx8bit
товар відсутній
| FM24VN10-G |
|
Виробник: INFINEON (CYPRESS)
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 3.4MHz
Kind of interface: serial
Memory: 1Mb FRAM
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 128kx8bit
кількість в упаковці: 1 шт
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 3.4MHz
Kind of interface: serial
Memory: 1Mb FRAM
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 128kx8bit
кількість в упаковці: 1 шт
товар відсутній
| FM24VN10-GTR |
|
Виробник: INFINEON (CYPRESS)
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 3.4MHz
Kind of interface: serial
Memory: 1Mb FRAM
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 128kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 3.4MHz
Kind of interface: serial
Memory: 1Mb FRAM
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 128kx8bit
товар відсутній
| FM25VN10-G |
|
Виробник: INFINEON (CYPRESS)
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 40MHz
Kind of interface: serial
Memory: 1Mb FRAM
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 128kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 40MHz
Kind of interface: serial
Memory: 1Mb FRAM
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 128kx8bit
товар відсутній
| M24749-IV-N-10-.282 |
|
Виробник: Glenair
Antistatic Control Products GROUND STRAPS - BRAID CABLING EXTRUDING
Antistatic Control Products GROUND STRAPS - BRAID CABLING EXTRUDING
товар відсутній
| MCIMX6L2DVN10AC |
|
Виробник: NXP Semiconductors
Processors - Application Specialised i.MX 6SL ROM Perf Enhan
Processors - Application Specialised i.MX 6SL ROM Perf Enhan
товар відсутній
| MCIMX6L2EVN10ABR |
|
Виробник: NXP Semiconductors
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432
товар відсутній
| MCIMX6L2EVN10AC |
|
Виробник: NXP Semiconductors
Processors - Application Specialised i.MX 6SL ROM Perf Enhan
Processors - Application Specialised i.MX 6SL ROM Perf Enhan
товар відсутній
| MCIMX6L2EVN10ACR |
|
Виробник: NXP Semiconductors
Processors - Application Specialised i.MX 6SL ROM Perf Enhan
Processors - Application Specialised i.MX 6SL ROM Perf Enhan
товар відсутній
| MCIMX6L3DVN10AB |
|
Виробник: NXP Semiconductors
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432
товар відсутній
| MCIMX6L7DVN10AB |
|
Виробник: NXP Semiconductors
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432
товар відсутній
| MCIMX6L7DVN10AC |
|
Виробник: NXP Semiconductors
Processors - Application Specialised i.MX 6SL ROM Perf Enhan
Processors - Application Specialised i.MX 6SL ROM Perf Enhan
товар відсутній
| MCIMX6L8DVN10ABR |
|
Виробник: NXP Semiconductors
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432
Processors - Application Specialised i.MX 6 series 32-bit MPU, ARM Cortex-A9 core, 1GHz, MAPBGA 432
товар відсутній