Продукція > SHINDENGEN > Всі товари виробника SHINDENGEN (3558) > Сторінка 40 з 60
Фото | Назва | Виробник | Інформація |
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P58LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
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P58LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD кількість в упаковці: 1 шт |
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P5B50HP2F-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA) Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±10V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
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P5B50HP2F-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA) Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±10V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P5B52HP2-5071 | Shindengen | MOSFET Hi Voltage Low Noise |
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P5B52HP2-5071 | SHINDENGEN | P5B52HP2-5071 SMD N channel transistors |
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P5F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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P5F50HP2-5600 | SHINDENGEN | P5F50HP2-5600 THT N channel transistors |
на замовлення 100 шт: термін постачання 7-14 дні (днів) |
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P5F50HP2F-5600 | SHINDENGEN | P5F50HP2F-5600 THT N channel transistors |
на замовлення 72 шт: термін постачання 7-14 дні (днів) |
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P5F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 20A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 600V Drain current: 5A On-state resistance: 1.4Ω |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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P5F60HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
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P5F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 20A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 600V Drain current: 5A On-state resistance: 1.4Ω кількість в упаковці: 1 шт |
на замовлення 49 шт: термін постачання 7-14 дні (днів) |
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P60B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA) Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
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P60B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA) Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
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P60B4EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 686 шт: термін постачання 21-30 дні (днів) |
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P60B4EL-5071 | Shindengen | MOSFET 40V, 60A EETMOS POWER MOSFET |
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P60B4EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 686 шт: термін постачання 7-14 дні (днів) |
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P60B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
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P60B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P60B6EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2888 шт: термін постачання 21-30 дні (днів) |
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P60B6EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2888 шт: термін постачання 7-14 дні (днів) |
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P60B6EN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
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P60B6EN-5071 | Shindengen | MOSFET 60V, 60A EETMOS POWER MOSFET |
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P60B6EN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P60B6SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
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P60B6SN-5071 | Shindengen | MOSFET EETMOS series Power MOSFET SMD |
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P60B6SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P64LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.7mΩ Pulsed drain current: 192A Power dissipation: 168W Gate charge: 77nC Polarisation: unipolar Technology: EETMOS4 Drain current: 64A Kind of channel: enhanced Drain-source voltage: 60V |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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P64LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.7mΩ Pulsed drain current: 192A Power dissipation: 168W Gate charge: 77nC Polarisation: unipolar Technology: EETMOS4 Drain current: 64A Kind of channel: enhanced Drain-source voltage: 60V кількість в упаковці: 1 шт |
на замовлення 67 шт: термін постачання 7-14 дні (днів) |
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P64LF6QLK-5071 | SHINDENGEN | P64LF6QLK-5071 SMD N channel transistors |
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P64LF6QN-5071 | SHINDENGEN | P64LF6QN-5071 SMD N channel transistors |
на замовлення 89 шт: термін постачання 7-14 дні (днів) |
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P64LF6QNK-5071 | SHINDENGEN | P64LF6QNK-5071 SMD N channel transistors |
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P66F7R5SN-5600 | SHINDENGEN | P66F7R5SN-5600 THT N channel transistors |
на замовлення 91 шт: термін постачання 7-14 дні (днів) |
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P66F7R5SNK-5600 | SHINDENGEN | P66F7R5SNK-5600 THT N channel transistors |
на замовлення 100 шт: термін постачання 7-14 дні (днів) |
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P6B28HP2-5071 | SHINDENGEN | P6B28HP2-5071 SMD N channel transistors |
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P6B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 24A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
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P6B40HP2-5071 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
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P6B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 24A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P6B52HP2-5071 | Shindengen | MOSFET Hi Voltage Low Noise |
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P6B52HP2-5071 | SHINDENGEN | P6B52HP2-5071 SMD N channel transistors |
на замовлення 27 шт: термін постачання 7-14 дні (днів) |
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P6F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A Drain-source voltage: 500V Drain current: 6A Case: FTO-220AG (SC91) Mounting: THT Polarisation: unipolar On-state resistance: 1.35Ω Pulsed drain current: 24A Power dissipation: 62.5W Technology: Hi-PotMOS2 Kind of channel: enhanced Gate charge: 15nC Gate-source voltage: ±30V Kind of package: bulk Type of transistor: N-MOSFET |
на замовлення 172 шт: термін постачання 21-30 дні (днів) |
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P6F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
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P6F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A Drain-source voltage: 500V Drain current: 6A Case: FTO-220AG (SC91) Mounting: THT Polarisation: unipolar On-state resistance: 1.35Ω Pulsed drain current: 24A Power dissipation: 62.5W Technology: Hi-PotMOS2 Kind of channel: enhanced Gate charge: 15nC Gate-source voltage: ±30V Kind of package: bulk Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 172 шт: термін постачання 7-14 дні (днів) |
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P6FE25VX5K-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W Mounting: SMD Case: FE (TO252AB similar) Kind of package: reel; tape Application: automotive industry Power dissipation: 27W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 24A Drain-source voltage: 250V Drain current: 6A On-state resistance: 0.7Ω Type of transistor: N-MOSFET |
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P6FE25VX5K-5061 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
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P6FE25VX5K-5071 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
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P6FE25VX5K-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W Mounting: SMD Case: FE (TO252AB similar) Kind of package: reel; tape Application: automotive industry Power dissipation: 27W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 24A Drain-source voltage: 250V Drain current: 6A On-state resistance: 0.7Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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P70F5EN-5600 | Shindengen | MOSFET 50V, 70A EETMOS POWER MOSFET |
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P70F5EN-5600 | SHINDENGEN | P70F5EN-5600 THT N channel transistors |
на замовлення 99 шт: термін постачання 7-14 дні (днів) |
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P70F7R5EN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Pulsed drain current: 280A Power dissipation: 53W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 105nC Kind of package: bulk Kind of channel: enhanced |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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P70F7R5EN-5600 | Shindengen | MOSFET 75V, 70A EETMOS POWER MOSFET |
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P70F7R5EN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Pulsed drain current: 280A Power dissipation: 53W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 105nC Kind of package: bulk Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 88 шт: термін постачання 7-14 дні (днів) |
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P70FP12SN-5071 | SHINDENGEN | P70FP12SN-5071 SMD N channel transistors |
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P70FP12SNK-5071 | SHINDENGEN | P70FP12SNK-5071 SMD N channel transistors |
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P70LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.5mΩ Pulsed drain current: 210A Power dissipation: 123W Gate charge: 49nC Polarisation: unipolar Technology: EETMOS4 Drain current: 70A Kind of channel: enhanced Drain-source voltage: 40V |
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P70LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.5mΩ Pulsed drain current: 210A Power dissipation: 123W Gate charge: 49nC Polarisation: unipolar Technology: EETMOS4 Drain current: 70A Kind of channel: enhanced Drain-source voltage: 40V кількість в упаковці: 1 шт |
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P70LF4QLK-5071 | SHINDENGEN | P70LF4QLK-5071 SMD N channel transistors |
на замовлення 45 шт: термін постачання 7-14 дні (днів) |
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P70LF4QN-5071 | SHINDENGEN | P70LF4QN-5071 SMD N channel transistors |
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P70LF4QNK-5071 | SHINDENGEN | P70LF4QNK-5071 SMD N channel transistors |
на замовлення 5000 шт: термін постачання 7-14 дні (днів) |
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P72LF7R5SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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P58LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
товар відсутній
P58LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
P5B50HP2F-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P5B50HP2F-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P5F50HP2-5600 |
Виробник: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
на замовлення 82 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 142.95 грн |
10+ | 116.41 грн |
100+ | 80.58 грн |
200+ | 73.92 грн |
500+ | 67.26 грн |
1000+ | 57.8 грн |
2000+ | 54.94 грн |
P5F50HP2-5600 |
Виробник: SHINDENGEN
P5F50HP2-5600 THT N channel transistors
P5F50HP2-5600 THT N channel transistors
на замовлення 100 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.54 грн |
28+ | 34.96 грн |
77+ | 33.3 грн |
P5F50HP2F-5600 |
Виробник: SHINDENGEN
P5F50HP2F-5600 THT N channel transistors
P5F50HP2F-5600 THT N channel transistors
на замовлення 72 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.25 грн |
32+ | 30.8 грн |
87+ | 29.13 грн |
P5F60HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 20A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 1.4Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 20A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 1.4Ω
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 43.91 грн |
24+ | 34.68 грн |
P5F60HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 20A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 1.4Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 20A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 1.4Ω
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 54.72 грн |
24+ | 41.62 грн |
65+ | 39.12 грн |
P60B10SB-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
P60B10SB-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P60B4EL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 686 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 51.77 грн |
25+ | 32.6 грн |
68+ | 31.22 грн |
100+ | 30.52 грн |
P60B4EL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 686 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.12 грн |
25+ | 40.63 грн |
68+ | 37.46 грн |
100+ | 36.63 грн |
P60B4SN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P60B4SN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P60B6EL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2888 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 50.2 грн |
25+ | 41.97 грн |
26+ | 31.91 грн |
70+ | 29.83 грн |
P60B6EL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2888 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.24 грн |
25+ | 52.3 грн |
26+ | 38.29 грн |
70+ | 35.79 грн |
P60B6EN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P60B6EN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P60B6SN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P60B6SN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P64LF6QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 58.42 грн |
8+ | 44.6 грн |
24+ | 33.99 грн |
65+ | 31.91 грн |
P64LF6QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 70.1 грн |
5+ | 55.58 грн |
24+ | 40.79 грн |
65+ | 38.29 грн |
P64LF6QN-5071 |
Виробник: SHINDENGEN
P64LF6QN-5071 SMD N channel transistors
P64LF6QN-5071 SMD N channel transistors
на замовлення 89 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 68.13 грн |
23+ | 43.29 грн |
62+ | 40.79 грн |
P66F7R5SN-5600 |
Виробник: SHINDENGEN
P66F7R5SN-5600 THT N channel transistors
P66F7R5SN-5600 THT N channel transistors
на замовлення 91 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 112.06 грн |
14+ | 71.59 грн |
38+ | 67.43 грн |
P66F7R5SNK-5600 |
Виробник: SHINDENGEN
P66F7R5SNK-5600 THT N channel transistors
P66F7R5SNK-5600 THT N channel transistors
на замовлення 100 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 127.3 грн |
11+ | 90.73 грн |
30+ | 85.74 грн |
500+ | 85.58 грн |
P6B40HP2-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P6B40HP2-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P6B52HP2-5071 |
Виробник: SHINDENGEN
P6B52HP2-5071 SMD N channel transistors
P6B52HP2-5071 SMD N channel transistors
на замовлення 27 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.66 грн |
31+ | 31.63 грн |
84+ | 29.97 грн |
P6F50HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A
Drain-source voltage: 500V
Drain current: 6A
Case: FTO-220AG (SC91)
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.35Ω
Pulsed drain current: 24A
Power dissipation: 62.5W
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: bulk
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A
Drain-source voltage: 500V
Drain current: 6A
Case: FTO-220AG (SC91)
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.35Ω
Pulsed drain current: 24A
Power dissipation: 62.5W
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: bulk
Type of transistor: N-MOSFET
на замовлення 172 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.19 грн |
9+ | 43.01 грн |
25+ | 38.71 грн |
27+ | 29.83 грн |
72+ | 28.44 грн |
P6F50HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A
Drain-source voltage: 500V
Drain current: 6A
Case: FTO-220AG (SC91)
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.35Ω
Pulsed drain current: 24A
Power dissipation: 62.5W
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: bulk
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A
Drain-source voltage: 500V
Drain current: 6A
Case: FTO-220AG (SC91)
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.35Ω
Pulsed drain current: 24A
Power dissipation: 62.5W
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: bulk
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 172 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 53.6 грн |
25+ | 46.45 грн |
27+ | 35.79 грн |
72+ | 34.13 грн |
P6FE25VX5K-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 27W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 27W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
товар відсутній
P6FE25VX5K-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 27W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 27W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
P70F5EN-5600 |
Виробник: SHINDENGEN
P70F5EN-5600 THT N channel transistors
P70F5EN-5600 THT N channel transistors
на замовлення 99 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 135.36 грн |
11+ | 88.24 грн |
31+ | 84.07 грн |
P70F7R5EN-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 53W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 53W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: bulk
Kind of channel: enhanced
на замовлення 88 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 112.8 грн |
5+ | 93.65 грн |
12+ | 71.45 грн |
31+ | 67.29 грн |
P70F7R5EN-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 53W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: bulk
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 53W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: bulk
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 135.36 грн |
5+ | 116.7 грн |
12+ | 85.74 грн |
31+ | 80.74 грн |
P70LF4QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Pulsed drain current: 210A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Pulsed drain current: 210A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 40V
товар відсутній
P70LF4QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Pulsed drain current: 210A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Pulsed drain current: 210A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
P70LF4QLK-5071 |
Виробник: SHINDENGEN
P70LF4QLK-5071 SMD N channel transistors
P70LF4QLK-5071 SMD N channel transistors
на замовлення 45 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.83 грн |
20+ | 48.28 грн |
55+ | 45.78 грн |
P70LF4QNK-5071 |
Виробник: SHINDENGEN
P70LF4QNK-5071 SMD N channel transistors
P70LF4QNK-5071 SMD N channel transistors
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73.42 грн |
21+ | 46.45 грн |
58+ | 43.95 грн |
P72LF7R5SL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 62.43 грн |
18+ | 46.48 грн |