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BZW50-120B BZW50-120B STMicroelectronics BZW50_ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 23A
Breakdown voltage: 133V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-18 BZW50-18 STMicroelectronics bzw50.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape
Max. off-state voltage: 18V
Max. forward impulse current: 155A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 20V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
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BZW50-22 BZW50-22 STMicroelectronics bzw50.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-22B BZW50-22B STMicroelectronics bzw50.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-12B BZW50-12B STMicroelectronics BZW50_ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 227A
Breakdown voltage: 13.3V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-82 BZW50-82 STMicroelectronics BZW50_ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: unidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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STM32H755IIT6 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755BIT3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Number of comparators: 2
Family: STM32H7
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STM32H755BIT6 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK6 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIT3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH6 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755ZIT3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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SMCJ5.0CA-TR SMCJ5.0CA-TR STMicroelectronics SMCJ33CA-TR.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
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BTB08-600CRG STMicroelectronics en.CD00002266.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
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STB7NK80ZT4 STB7NK80ZT4 STMicroelectronics STB7NK80Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 557 шт:
термін постачання 21-30 дні (днів)
3+203.35 грн
10+146.78 грн
14+68.04 грн
37+64.98 грн
Мінімальне замовлення: 3
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M95M01-RMN6TP M95M01-RMN6TP STMicroelectronics M95M01-RMN6TP.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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VND5050AJTR-E VND5050AJTR-E STMicroelectronics vnd5050aj-e.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
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STH30N65DM6-7AG STMicroelectronics sth30n65dm6-7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Mounting: SMD
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 18A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 223W
Polarisation: unipolar
Gate charge: 46nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 112A
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STGW35HF60WD STGW35HF60WD STMicroelectronics STGW35HF60WD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STM32F103T6U7A STMicroelectronics en.CD00210843.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 10kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32F1
Kind of package: in-tray
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STM32F103TBU6TR STMicroelectronics stm32f103cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
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STM1810LWX7F STMicroelectronics stm1810.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.62V
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SCTWA30N120 SCTWA30N120 STMicroelectronics sctwa30n120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1947.92 грн
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TN3015H-6G TN3015H-6G STMicroelectronics tn3015h-6g.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
3+137.49 грн
10+88.68 грн
16+58.10 грн
Мінімальне замовлення: 3
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TN3015H-6T TN3015H-6T STMicroelectronics tn3015h-6t.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220AB
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
6+74.92 грн
10+63.45 грн
19+48.16 грн
52+45.87 грн
Мінімальне замовлення: 6
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TIP121 TIP121 STMicroelectronics TIP121.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
8+53.51 грн
11+35.40 грн
25+31.73 грн
42+21.79 грн
50+21.71 грн
113+20.56 грн
1000+19.80 грн
Мінімальне замовлення: 8
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TN1215-800H TN1215-800H STMicroelectronics tn1215.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 8A; Igt: 15mA; IPAK; THT; tube; Ifsm: 110A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
4+123.49 грн
20+45.26 грн
55+42.73 грн
Мінімальне замовлення: 4
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TN815-800B-TR STMicroelectronics TS820.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 200mA; DPAK; SMD; reel,tape
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 200mA
Max. forward impulse current: 70A
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STM32F302VBT6TR STM32F302VBT6TR STMicroelectronics stm32f302cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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VN800PSTR-E VN800PSTR-E STMicroelectronics VN800PS-E.pdf Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 700mA; SO8; 5.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: SO8
Supply voltage: 5.5...36V
Kind of package: reel; tape
On-state resistance: 0.27Ω
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)
3+139.96 грн
11+84.86 грн
29+80.27 грн
500+77.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
M41T11MH6F STMicroelectronics m41t11.pdf Category: RTC circuits
Description: IC: RTC circuit; I2C; NV RAM; SOP28; 2÷5.5V; 56B
Type of integrated circuit: RTC circuit
Interface: I2C
Kind of memory: NV RAM
Mounting: SMD
Case: SOP28
Clock format: HH:MM:SS
Date format: YY-MM-DD-dd
Operating voltage: 2...5.5V
Time keeping current: 0.8µA
Memory capacity: 56B
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STPS1545D STPS1545D STMicroelectronics stps1545.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.5V
Max. off-state voltage: 45V
Max. load current: 30A
Max. forward voltage: 0.5V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 220A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AC
на замовлення 388 шт:
термін постачання 21-30 дні (днів)
8+58.45 грн
9+45.87 грн
11+37.77 грн
27+33.87 грн
50+32.64 грн
73+32.03 грн
250+30.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STWA35N65DM2 STMicroelectronics stwa35n65dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
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STWA63N65DM2 STWA63N65DM2 STMicroelectronics STWA63N65DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STWA65N65DM2AG STMicroelectronics stwa65n65dm2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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STWA72N60DM2AG STMicroelectronics stwa72n60dm2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Pulsed drain current: 220A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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STB32NM50N STMicroelectronics en.DM00060101.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 62.5nC
Kind of channel: enhancement
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STP32NM50N STMicroelectronics en.DM00060101.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13.86A; Idm: 88A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhancement
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TSH82IYDT TSH82IYDT STMicroelectronics tsh82.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 55÷65MHz; Ch: 2; SO8; 4.5÷12VDC; IB: 20uA
Type of integrated circuit: operational amplifier
Bandwidth: 55...65MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 105mV/μs
Quiescent current: 11.5mA
Operating temperature: -40...85°C
Input offset voltage: 12mV
Voltage supply range: 4.5...12V DC
Input bias current: 20µA
Input offset current: 5µA
Application: automotive industry
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STM32H757IIT6 STMicroelectronics stm32h757ai.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 119
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757BIT6 STMicroelectronics stm32h757ai.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757AII6 STMicroelectronics stm32h757ai.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA169; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: UFBGA169
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757XIH6 STMicroelectronics stm32h757ai.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757XIH6TR STMicroelectronics stm32h757ai.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757ZIY6TR STMicroelectronics stm32h757ai.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; WLCSP156; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 99
Case: WLCSP156
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STF43N60DM2 STMicroelectronics STF43N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
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STL8N10LF3 STMicroelectronics en.DM00071080.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
на замовлення 2867 шт:
термін постачання 21-30 дні (днів)
4+119.38 грн
10+100.15 грн
13+71.86 грн
35+68.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STL8N10F7 STMicroelectronics en.DM00091926.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 140A; 50W
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 140A
Case: PowerFLAT 3.3x3.3
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
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L9349-LF STMicroelectronics l9349-lf.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Iout: 5A; Ch: 4; SMD; PowerSO20; 4.5÷32V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -40...150°C
Supply voltage: 4.5...32V
DC supply current: 8mA
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STM32L081CZU6 STMicroelectronics dm00108282-ultra-low-power-stm32l0x1-advanced-arm-based-32-bit-mcus-stmicroelectronics.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN48; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 40
Case: UFQFPN48
Supply voltage: 1.8...3.6V DC
Interface: I2C x3; LPUART; SPI x6; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 6kB EEPROM; 20kB SRAM; 192kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 7
Family: STM32L0
Kind of package: in-tray
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VNN1NV04PTR-E VNN1NV04PTR-E STMicroelectronics vnn1nv04p-e.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.7A; Ch: 1; SMD; SOT223; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.7A
Number of channels: 1
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Output voltage: 36V
Operating temperature: -40...150°C
на замовлення 1520 шт:
термін постачання 21-30 дні (днів)
5+94.68 грн
10+74.92 грн
17+54.28 грн
46+51.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
VNS1NV04DPTR-E VNS1NV04DPTR-E STMicroelectronics VNS1NV04DP-E.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.7A; Ch: 2; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.7A
Number of channels: 2
Mounting: SMD
Case: SO8
On-state resistance: 0.33Ω
Kind of package: reel; tape
Output voltage: 40V
на замовлення 2795 шт:
термін постачання 21-30 дні (днів)
3+130.73 грн
10+94.80 грн
25+94.03 грн
27+89.45 грн
1000+86.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VND1NV04TR-E VND1NV04TR-E STMicroelectronics VND1NV04TR-E.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.7A; Ch: 1; SMD; DPAK; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.7A
Number of channels: 1
Mounting: SMD
Case: DPAK
On-state resistance: 0.25Ω
Kind of package: reel; tape
Output voltage: 40V
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SM6T10AY SM6T10AY STMicroelectronics SM6TxxY.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 10V
Leakage current: 50µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 8.55V
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TS971ILT TS971ILT STMicroelectronics ts971.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; Ch: 1; SOT23-5; 2.7÷10VDC; IB: 1uA
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 4V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...10V DC
Integrated circuit features: low noise; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1µA
Input offset current: 150nA
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TS971IDT TS971IDT STMicroelectronics ts971.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; Ch: 1; SO8; 2.7÷10VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 4V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...10V DC
Integrated circuit features: low noise; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1µA
Input offset current: 150nA
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TS971IYLT TS971IYLT STMicroelectronics ts971.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; Ch: 1; SOT23-5; 2.7÷10VDC; IB: 1uA
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 4V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...10V DC
Integrated circuit features: low noise; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1µA
Input offset current: 150nA
Application: automotive industry
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BZW50-120B BZW50_ser.pdf
BZW50-120B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 23A
Breakdown voltage: 133V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-18 bzw50.pdf
BZW50-18
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape
Max. off-state voltage: 18V
Max. forward impulse current: 155A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 20V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
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BZW50-22 bzw50.pdf
BZW50-22
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-22B bzw50.pdf
BZW50-22B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-12B BZW50_ser.pdf
BZW50-12B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 227A
Breakdown voltage: 13.3V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-82 BZW50_ser.pdf
BZW50-82
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: unidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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STM32H755IIT6 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755BIT3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Number of comparators: 2
Family: STM32H7
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STM32H755BIT6 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK6 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIT3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH6 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755ZIT3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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SMCJ5.0CA-TR description SMCJ33CA-TR.pdf
SMCJ5.0CA-TR
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
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BTB08-600CRG en.CD00002266.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
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STB7NK80ZT4 STB7NK80Z.pdf
STB7NK80ZT4
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 557 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+203.35 грн
10+146.78 грн
14+68.04 грн
37+64.98 грн
Мінімальне замовлення: 3
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M95M01-RMN6TP M95M01-RMN6TP.pdf
M95M01-RMN6TP
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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VND5050AJTR-E vnd5050aj-e.pdf
VND5050AJTR-E
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
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STH30N65DM6-7AG sth30n65dm6-7ag.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Mounting: SMD
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 18A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 223W
Polarisation: unipolar
Gate charge: 46nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 112A
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STGW35HF60WD STGW35HF60WD.pdf
STGW35HF60WD
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STM32F103T6U7A en.CD00210843.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 10kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32F1
Kind of package: in-tray
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STM32F103TBU6TR stm32f103cb.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
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STM1810LWX7F stm1810.pdf
Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.62V
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SCTWA30N120 sctwa30n120.pdf
SCTWA30N120
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1947.92 грн
В кошику  од. на суму  грн.
TN3015H-6G tn3015h-6g.pdf
TN3015H-6G
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+137.49 грн
10+88.68 грн
16+58.10 грн
Мінімальне замовлення: 3
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TN3015H-6T tn3015h-6t.pdf
TN3015H-6T
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220AB
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.92 грн
10+63.45 грн
19+48.16 грн
52+45.87 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TIP121 TIP121.pdf
TIP121
Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+53.51 грн
11+35.40 грн
25+31.73 грн
42+21.79 грн
50+21.71 грн
113+20.56 грн
1000+19.80 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TN1215-800H tn1215.pdf
TN1215-800H
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 8A; Igt: 15mA; IPAK; THT; tube; Ifsm: 110A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+123.49 грн
20+45.26 грн
55+42.73 грн
Мінімальне замовлення: 4
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TN815-800B-TR TS820.pdf
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 200mA; DPAK; SMD; reel,tape
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 200mA
Max. forward impulse current: 70A
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STM32F302VBT6TR stm32f302cb.pdf
STM32F302VBT6TR
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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VN800PSTR-E VN800PS-E.pdf
VN800PSTR-E
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 700mA; SO8; 5.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: SO8
Supply voltage: 5.5...36V
Kind of package: reel; tape
On-state resistance: 0.27Ω
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+139.96 грн
11+84.86 грн
29+80.27 грн
500+77.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
M41T11MH6F m41t11.pdf
Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; I2C; NV RAM; SOP28; 2÷5.5V; 56B
Type of integrated circuit: RTC circuit
Interface: I2C
Kind of memory: NV RAM
Mounting: SMD
Case: SOP28
Clock format: HH:MM:SS
Date format: YY-MM-DD-dd
Operating voltage: 2...5.5V
Time keeping current: 0.8µA
Memory capacity: 56B
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STPS1545D stps1545.pdf
STPS1545D
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.5V
Max. off-state voltage: 45V
Max. load current: 30A
Max. forward voltage: 0.5V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 220A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AC
на замовлення 388 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.45 грн
9+45.87 грн
11+37.77 грн
27+33.87 грн
50+32.64 грн
73+32.03 грн
250+30.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STWA35N65DM2 stwa35n65dm2.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
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STWA63N65DM2 STWA63N65DM2.pdf
STWA63N65DM2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STWA65N65DM2AG stwa65n65dm2ag.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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STWA72N60DM2AG stwa72n60dm2ag.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Pulsed drain current: 220A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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STB32NM50N en.DM00060101.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 62.5nC
Kind of channel: enhancement
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STP32NM50N en.DM00060101.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13.86A; Idm: 88A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhancement
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TSH82IYDT tsh82.pdf
TSH82IYDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 55÷65MHz; Ch: 2; SO8; 4.5÷12VDC; IB: 20uA
Type of integrated circuit: operational amplifier
Bandwidth: 55...65MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 105mV/μs
Quiescent current: 11.5mA
Operating temperature: -40...85°C
Input offset voltage: 12mV
Voltage supply range: 4.5...12V DC
Input bias current: 20µA
Input offset current: 5µA
Application: automotive industry
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STM32H757IIT6 stm32h757ai.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 119
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757BIT6 stm32h757ai.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757AII6 stm32h757ai.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA169; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: UFBGA169
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757XIH6 stm32h757ai.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757XIH6TR stm32h757ai.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STM32H757ZIY6TR stm32h757ai.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; WLCSP156; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 99
Case: WLCSP156
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
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STF43N60DM2 STF43N60DM2.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
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STL8N10LF3 en.DM00071080.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
на замовлення 2867 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+119.38 грн
10+100.15 грн
13+71.86 грн
35+68.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STL8N10F7 en.DM00091926.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 140A; 50W
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 140A
Case: PowerFLAT 3.3x3.3
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
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L9349-LF l9349-lf.pdf
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Iout: 5A; Ch: 4; SMD; PowerSO20; 4.5÷32V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -40...150°C
Supply voltage: 4.5...32V
DC supply current: 8mA
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STM32L081CZU6 dm00108282-ultra-low-power-stm32l0x1-advanced-arm-based-32-bit-mcus-stmicroelectronics.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN48; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 40
Case: UFQFPN48
Supply voltage: 1.8...3.6V DC
Interface: I2C x3; LPUART; SPI x6; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 6kB EEPROM; 20kB SRAM; 192kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 7
Family: STM32L0
Kind of package: in-tray
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VNN1NV04PTR-E vnn1nv04p-e.pdf
VNN1NV04PTR-E
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.7A; Ch: 1; SMD; SOT223; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.7A
Number of channels: 1
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Output voltage: 36V
Operating temperature: -40...150°C
на замовлення 1520 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+94.68 грн
10+74.92 грн
17+54.28 грн
46+51.22 грн
Мінімальне замовлення: 5
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VNS1NV04DPTR-E VNS1NV04DP-E.pdf
VNS1NV04DPTR-E
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.7A; Ch: 2; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.7A
Number of channels: 2
Mounting: SMD
Case: SO8
On-state resistance: 0.33Ω
Kind of package: reel; tape
Output voltage: 40V
на замовлення 2795 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+130.73 грн
10+94.80 грн
25+94.03 грн
27+89.45 грн
1000+86.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VND1NV04TR-E VND1NV04TR-E.pdf
VND1NV04TR-E
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.7A; Ch: 1; SMD; DPAK; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.7A
Number of channels: 1
Mounting: SMD
Case: DPAK
On-state resistance: 0.25Ω
Kind of package: reel; tape
Output voltage: 40V
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SM6T10AY SM6TxxY.pdf
SM6T10AY
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 10V
Leakage current: 50µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 8.55V
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TS971ILT ts971.pdf
TS971ILT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; Ch: 1; SOT23-5; 2.7÷10VDC; IB: 1uA
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 4V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...10V DC
Integrated circuit features: low noise; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1µA
Input offset current: 150nA
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TS971IDT ts971.pdf
TS971IDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; Ch: 1; SO8; 2.7÷10VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 4V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...10V DC
Integrated circuit features: low noise; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1µA
Input offset current: 150nA
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TS971IYLT ts971.pdf
TS971IYLT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; Ch: 1; SOT23-5; 2.7÷10VDC; IB: 1uA
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 4V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...10V DC
Integrated circuit features: low noise; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1µA
Input offset current: 150nA
Application: automotive industry
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