Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (131526) > Сторінка 338 з 2193
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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M24LR04E-RMC6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8UFDFPNPart Status: Active Supplier Device Package: 8-UFDFPN (2x3) Standards: ISO 15693, ISO 18000-3, NFC Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: RFID Transponder Interface: I2C Frequency: 13.56MHz Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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STM8A-DISCOVERY | STMicroelectronics |
Description: DISCOVERY STM8A EVAL BRDPart Status: Not For New Designs Platform: Discovery Utilized IC / Part: STM8A Board Type: Evaluation Platform Core Processor: STM8 Contents: Board(s), LCD Type: MCU 8-Bit Mounting Type: Fixed Packaging: Bulk |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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M24LR64E-RMN6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 6028 шт: термін постачання 21-31 дні (днів) |
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M24LR64E-RDW6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-TSSOP Part Status: Active |
на замовлення 6028 шт: термін постачання 21-31 дні (днів) |
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M24LR64E-RMC6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8MLPPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-UFDFPN (2x3) Part Status: Active |
на замовлення 6984 шт: термін постачання 21-31 дні (днів) |
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M24LR04E-RMC6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8UFDFPNPart Status: Active Supplier Device Package: 8-UFDFPN (2x3) Standards: ISO 15693, ISO 18000-3, NFC Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: RFID Transponder Interface: I2C Frequency: 13.56MHz Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 40745 шт: термін постачання 21-31 дні (днів) |
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STLBC01QTR | STMicroelectronics |
Description: IC LOW ENERGY CTLR 24VFQFPN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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STEVAL-IDS001V2 | STMicroelectronics | Description: EVAL CARD USB TXRX 315MHZ |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-IDS001V5 | STMicroelectronics | Description: EVAL CARD USB TXRX 915MHZ |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STLBC01QTR | STMicroelectronics |
Description: IC LOW ENERGY CTLR 24VFQFPN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STLBC01QTR | STMicroelectronics |
Description: IC LOW ENERGY CTLR 24VFQFPN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STH270N4F3-2 | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STL6N2VH5 | STMicroelectronics |
Description: MOSFET N-CH 20V POWERFLATInput Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerFlat™ (2x2) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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STQ1HN60K3-AP | STMicroelectronics |
Description: MOSFET N-CH 600V 400MA TO92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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STL45N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 22.5A PWRFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V Power Dissipation (Max): 2.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFLAT™ (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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STL8N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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STWA88N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 84A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V |
на замовлення 540 шт: термін постачання 21-31 дні (днів) |
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STF13N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 12A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
на замовлення 889 шт: термін постачання 21-31 дні (днів) |
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STGP20V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 40A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
на замовлення 776 шт: термін постачання 21-31 дні (днів) |
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STGP30V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STGW20V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 40A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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STGW30H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 350µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 105 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
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STGW40V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 52ns/208ns Switching Energy: 456µJ (on), 411µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 226 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
на замовлення 803 шт: термін постачання 21-31 дні (днів) |
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STGW60V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 60ns/208ns Switching Energy: 750µJ (on), 550µJ (off) Test Condition: 400V, 60A, 4.7Ohm, 15V Gate Charge: 334 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
на замовлення 245 шт: термін постачання 21-31 дні (днів) |
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STGWT20V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 40A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STGWT30V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STGWT40V60DLF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/208ns Switching Energy: 411µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 226 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STI24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
на замовлення 550 шт: термін постачання 21-31 дні (днів) |
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STW19NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 13A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 890 шт В кошику од. на суму грн. | ||||||||||||||
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STD25NF20 | STMicroelectronics |
Description: MOSFET N-CH 200V 18A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1503 шт: термін постачання 21-31 дні (днів) |
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STH270N4F3-2 | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STL45N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 22.5A PWRFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V Power Dissipation (Max): 2.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFLAT™ (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STL8N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 1682 шт: термін постачання 21-31 дні (днів) |
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STGIPS30C60-H | STMicroelectronics |
Description: MOD IPM SLLIMM 30A 600V 25SDIP Packaging: Tube Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 30 A Voltage: 600 V |
товару немає в наявності |
Мінімальне замовлення: 132 шт В кошику од. на суму грн. | ||||||||||||||
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STL6N2VH5 | STMicroelectronics |
Description: MOSFET N-CH 20V POWERFLATInput Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerFlat™ (2x2) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 2034 шт: термін постачання 21-31 дні (днів) |
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STT5N2VH5 | STMicroelectronics |
Description: MOSFET N-CH 20V SOT23-6Current - Continuous Drain (Id) @ 25°C: 5A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V |
на замовлення 10626 шт: термін постачання 21-31 дні (днів) |
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STT5N2VH5 | STMicroelectronics |
Description: MOSFET N-CH 20V SOT23-6Current - Continuous Drain (Id) @ 25°C: 5A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| STGIPS20C60 | STMicroelectronics |
Description: IGBT IPM 600V 20A 25-PWRDIP MOD Packaging: Tube Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 20 A Voltage: 600 V |
товару немає в наявності |
Мінімальне замовлення: 132 шт В кошику од. на суму грн. | |||||||||||||||
| STGW40V60DLF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/208ns Switching Energy: 411µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 226 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||||||
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STGWT40V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 52ns/208ns Switching Energy: 456µJ (on), 411µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 226 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS3P6F6 | STMicroelectronics |
Description: MOSFET P-CH 60V 3A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STGW30V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
на замовлення 247 шт: термін постачання 21-31 дні (днів) |
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STP13N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 12A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
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STS3P6F6 | STMicroelectronics |
Description: MOSFET P-CH 60V 3A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STU1HN60K3 | STMicroelectronics |
Description: MOSFET N-CH 600V 1.2A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STD25NF20 | STMicroelectronics |
Description: MOSFET N-CH 200V 18A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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Q7525663 | STMicroelectronics | Description: KIT ESD PROTECT 16 VALUE 10EA |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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Q7525688 | STMicroelectronics | Description: KIT ESD PROTECT 10 VALUE 10EA |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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Q7525712 | STMicroelectronics |
Description: KIT ESD PROTECT 16 VALUE 10EA Packaging: Box Mounting Type: Surface Mount Quantity: 160 Pieces (16 Values - 10 Each) Kit Type: ESD Protection Voltage - Breakdown: 6V ~ 15V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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Q7668862 | STMicroelectronics | Description: KIT ESD PROTECT 16 VALUE 10EA |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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Q7521514 | STMicroelectronics | Description: KIT ESD PROTECT 7 VALUE 10EA |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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Q7525674 | STMicroelectronics |
Description: KIT ESD PROTECT 13 VALUE 10EA Packaging: Box Mounting Type: Surface Mount Quantity: 130 Pieces (13 Values - 10 Each) Kit Type: ESD Protection Voltage - Breakdown: 5V ~ 14.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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Q7525700 | STMicroelectronics | Description: KIT ESD PROTECT 16 VALUE 10EA |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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M41ST85WMX6TR | STMicroelectronics |
Description: IC RTC CLOCK/CALENDAR I2C 28SOPackaging: Cut Tape (CT) Features: Alarm, Leap Year, NVSRAM, Square Wave Output, Supervisor, Watchdog Timer Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 44B Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Time Format: HH:MM:SS:hh (24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 28-SO Voltage - Supply, Battery: 2.5V ~ 3.5V Current - Timekeeping (Max): 0.5mA @ 2.7V ~ 3.6V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3173 шт: термін постачання 21-31 дні (днів) |
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STBLC01QTR | STMicroelectronics |
Description: IC BLUETOOTH CTLR 24VFQFPN |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STCC2540IQTR | STMicroelectronics |
Description: IC PWR SWITCH N-CH 1:1 16VFQFPNPackaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 125°C (TJ) Rds On (Typ): 65mOhm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.8A Ratio - Input:Output: 1:1 Supplier Device Package: 16-VFQFPN (3x3) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO Part Status: Active |
на замовлення 38330 шт: термін постачання 21-31 дні (днів) |
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STCC5021IQTR | STMicroelectronics |
Description: IC PWR SWITCH N-CH 1:1 16VFQFPNPart Status: Obsolete Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO Supplier Device Package: 16-VFQFPN (3x3) Ratio - Input:Output: 1:1 Current - Output (Max): 2.8A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 4.5V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 65mOhm Operating Temperature: -40°C ~ 125°C (TJ) Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 16-WFQFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TS882IST | STMicroelectronics |
Description: IC COMPARATOR 2CH 8-MINISOPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.1V ~ 5.5V Supplier Device Package: 8-MiniSO Propagation Delay (Max): 16µs Current - Quiescent (Max): 500nA Voltage - Input Offset (Max): 6mV @ 5V Current - Input Bias (Max): 10pA CMRR, PSRR (Typ): 78dB CMRR Hysteresis: 4.2mV |
на замовлення 3229 шт: термін постачання 21-31 дні (днів) |
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TSU101ICT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SC70-5Current - Output / Channel: 11 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: SC-70-5 Voltage - Input Offset: 3 mV Current - Input Bias: 5 pA Gain Bandwidth Product: 9 kHz Slew Rate: 0.003V/µs Current - Supply: 650nA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.5 V |
на замовлення 2337 шт: термін постачання 21-31 дні (днів) |
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TSU101ILT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 650nA Slew Rate: 0.003V/µs Gain Bandwidth Product: 9 kHz Current - Input Bias: 5 pA Voltage - Input Offset: 3 mV Supplier Device Package: SOT-23-5 Number of Circuits: 1 Current - Output / Channel: 11 mA Voltage - Supply Span (Min): 1.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1492 шт: термін постачання 21-31 дні (днів) |
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| M24LR04E-RMC6T/2 |
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Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Part Status: Active
Supplier Device Package: 8-UFDFPN (2x3)
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: RFID Transponder
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Part Status: Active
Supplier Device Package: 8-UFDFPN (2x3)
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: RFID Transponder
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 48.75 грн |
| 10000+ | 45.18 грн |
| 15000+ | 44.19 грн |
| STM8A-DISCOVERY |
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Виробник: STMicroelectronics
Description: DISCOVERY STM8A EVAL BRD
Part Status: Not For New Designs
Platform: Discovery
Utilized IC / Part: STM8A
Board Type: Evaluation Platform
Core Processor: STM8
Contents: Board(s), LCD
Type: MCU 8-Bit
Mounting Type: Fixed
Packaging: Bulk
Description: DISCOVERY STM8A EVAL BRD
Part Status: Not For New Designs
Platform: Discovery
Utilized IC / Part: STM8A
Board Type: Evaluation Platform
Core Processor: STM8
Contents: Board(s), LCD
Type: MCU 8-Bit
Mounting Type: Fixed
Packaging: Bulk
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1784.07 грн |
| M24LR64E-RMN6T/2 |
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Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 6028 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.29 грн |
| 10+ | 112.15 грн |
| 25+ | 105.90 грн |
| 100+ | 91.27 грн |
| 250+ | 86.40 грн |
| 500+ | 82.95 грн |
| 1000+ | 78.40 грн |
| M24LR64E-RDW6T/2 |
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Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 6028 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.29 грн |
| 10+ | 112.15 грн |
| 25+ | 105.90 грн |
| 100+ | 91.27 грн |
| 250+ | 86.40 грн |
| 500+ | 82.95 грн |
| 1000+ | 78.40 грн |
| M24LR64E-RMC6T/2 |
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Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
на замовлення 6984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.99 грн |
| 10+ | 119.61 грн |
| 25+ | 112.94 грн |
| 100+ | 97.34 грн |
| 250+ | 92.16 грн |
| 500+ | 88.50 грн |
| 1000+ | 83.65 грн |
| M24LR04E-RMC6T/2 |
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Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Part Status: Active
Supplier Device Package: 8-UFDFPN (2x3)
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: RFID Transponder
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Part Status: Active
Supplier Device Package: 8-UFDFPN (2x3)
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: RFID Transponder
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 40745 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.28 грн |
| 10+ | 68.42 грн |
| 25+ | 64.48 грн |
| 100+ | 55.49 грн |
| 250+ | 52.46 грн |
| 500+ | 50.33 грн |
| 1000+ | 47.51 грн |
| STLBC01QTR |
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Виробник: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
Description: IC LOW ENERGY CTLR 24VFQFPN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STEVAL-IDS001V2 |
Виробник: STMicroelectronics
Description: EVAL CARD USB TXRX 315MHZ
Description: EVAL CARD USB TXRX 315MHZ
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| STEVAL-IDS001V5 |
Виробник: STMicroelectronics
Description: EVAL CARD USB TXRX 915MHZ
Description: EVAL CARD USB TXRX 915MHZ
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| STLBC01QTR |
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Виробник: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
Description: IC LOW ENERGY CTLR 24VFQFPN
товару немає в наявності
В кошику
од. на суму грн.
| STLBC01QTR |
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Виробник: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
Description: IC LOW ENERGY CTLR 24VFQFPN
товару немає в наявності
В кошику
од. на суму грн.
| STH270N4F3-2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| STL6N2VH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerFlat™ (2x2)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerFlat™ (2x2)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STQ1HN60K3-AP |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| STL45N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STL8N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STWA88N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
Description: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1210.48 грн |
| 30+ | 715.92 грн |
| 60+ | 662.41 грн |
| 120+ | 579.43 грн |
| 510+ | 536.38 грн |
| STF13N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 889 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 348.90 грн |
| 10+ | 222.39 грн |
| 50+ | 173.60 грн |
| 100+ | 148.16 грн |
| 500+ | 122.34 грн |
| STGP20V60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
на замовлення 776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.83 грн |
| 50+ | 91.91 грн |
| 100+ | 82.68 грн |
| 500+ | 62.40 грн |
| STGP30V60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STGW20V60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 284.03 грн |
| 30+ | 149.68 грн |
| STGW30H60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| STGW40V60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
на замовлення 803 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.60 грн |
| 30+ | 161.72 грн |
| 120+ | 132.68 грн |
| 510+ | 104.52 грн |
| STGW60V60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 349.69 грн |
| 30+ | 187.65 грн |
| 120+ | 154.77 грн |
| STGWT20V60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Description: IGBT TRENCH FS 600V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
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| STGWT30V60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
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| STGWT40V60DLF |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
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| STI24N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.94 грн |
| 10+ | 137.13 грн |
| 50+ | 105.08 грн |
| 100+ | 88.91 грн |
| 500+ | 71.89 грн |
| STW19NM60N |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 890 шт
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| STD25NF20 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1503 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.81 грн |
| 10+ | 98.58 грн |
| 100+ | 66.85 грн |
| 500+ | 49.99 грн |
| 1000+ | 45.89 грн |
| STH270N4F3-2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
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| STL45N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
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| STL8N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.95 грн |
| 10+ | 172.10 грн |
| 100+ | 120.36 грн |
| 500+ | 92.82 грн |
| STGIPS30C60-H |
Виробник: STMicroelectronics
Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
товару немає в наявності
Мінімальне замовлення: 132 шт
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| STL6N2VH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerFlat™ (2x2)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerFlat™ (2x2)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 2034 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.20 грн |
| 10+ | 42.82 грн |
| 100+ | 28.01 грн |
| 500+ | 20.29 грн |
| 1000+ | 18.36 грн |
| STT5N2VH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
на замовлення 10626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.13 грн |
| 10+ | 36.19 грн |
| 100+ | 23.39 грн |
| 500+ | 16.78 грн |
| 1000+ | 15.11 грн |
| STT5N2VH5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.37 грн |
| 6000+ | 12.70 грн |
| STGIPS20C60 |
Виробник: STMicroelectronics
Description: IGBT IPM 600V 20A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
товару немає в наявності
Мінімальне замовлення: 132 шт
В кошику
од. на суму грн.
| STGW40V60DLF |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| STGWT40V60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
товару немає в наявності
В кошику
од. на суму грн.
| STS3P6F6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| STGW30V60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.95 грн |
| 30+ | 143.99 грн |
| 120+ | 117.67 грн |
| STP13N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 474 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.12 грн |
| 50+ | 135.23 грн |
| 100+ | 122.64 грн |
| STS3P6F6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STU1HN60K3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 1.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Description: MOSFET N-CH 600V 1.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| STD25NF20 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| Q7525663 |
Виробник: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
Description: KIT ESD PROTECT 16 VALUE 10EA
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Q7525688 |
Виробник: STMicroelectronics
Description: KIT ESD PROTECT 10 VALUE 10EA
Description: KIT ESD PROTECT 10 VALUE 10EA
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Q7525712 |
Виробник: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (16 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 6V ~ 15V
Description: KIT ESD PROTECT 16 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (16 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 6V ~ 15V
товару немає в наявності
В кошику
од. на суму грн.
| Q7668862 |
Виробник: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
Description: KIT ESD PROTECT 16 VALUE 10EA
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Q7521514 |
Виробник: STMicroelectronics
Description: KIT ESD PROTECT 7 VALUE 10EA
Description: KIT ESD PROTECT 7 VALUE 10EA
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Q7525674 |
Виробник: STMicroelectronics
Description: KIT ESD PROTECT 13 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 130 Pieces (13 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 5V ~ 14.5V
Description: KIT ESD PROTECT 13 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 130 Pieces (13 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 5V ~ 14.5V
товару немає в наявності
В кошику
од. на суму грн.
| Q7525700 |
Виробник: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
Description: KIT ESD PROTECT 16 VALUE 10EA
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| M41ST85WMX6TR |
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Виробник: STMicroelectronics
Description: IC RTC CLOCK/CALENDAR I2C 28SO
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, NVSRAM, Square Wave Output, Supervisor, Watchdog Timer
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 44B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Time Format: HH:MM:SS:hh (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 28-SO
Voltage - Supply, Battery: 2.5V ~ 3.5V
Current - Timekeeping (Max): 0.5mA @ 2.7V ~ 3.6V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RTC CLOCK/CALENDAR I2C 28SO
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, NVSRAM, Square Wave Output, Supervisor, Watchdog Timer
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 44B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Time Format: HH:MM:SS:hh (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 28-SO
Voltage - Supply, Battery: 2.5V ~ 3.5V
Current - Timekeeping (Max): 0.5mA @ 2.7V ~ 3.6V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3173 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 748.44 грн |
| 10+ | 562.86 грн |
| 25+ | 523.40 грн |
| 100+ | 450.50 грн |
| 250+ | 436.02 грн |
| STBLC01QTR |
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Виробник: STMicroelectronics
Description: IC BLUETOOTH CTLR 24VFQFPN
Description: IC BLUETOOTH CTLR 24VFQFPN
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| STCC2540IQTR |
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Виробник: STMicroelectronics
Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-VFQFPN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-VFQFPN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
на замовлення 38330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.98 грн |
| 10+ | 116.49 грн |
| 25+ | 106.36 грн |
| 100+ | 89.29 грн |
| 250+ | 84.29 грн |
| 500+ | 81.87 грн |
| STCC5021IQTR |
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Виробник: STMicroelectronics
Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 16-VFQFPN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 2.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 65mOhm
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 16-VFQFPN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 2.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 65mOhm
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TS882IST |
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Виробник: STMicroelectronics
Description: IC COMPARATOR 2CH 8-MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.1V ~ 5.5V
Supplier Device Package: 8-MiniSO
Propagation Delay (Max): 16µs
Current - Quiescent (Max): 500nA
Voltage - Input Offset (Max): 6mV @ 5V
Current - Input Bias (Max): 10pA
CMRR, PSRR (Typ): 78dB CMRR
Hysteresis: 4.2mV
Description: IC COMPARATOR 2CH 8-MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.1V ~ 5.5V
Supplier Device Package: 8-MiniSO
Propagation Delay (Max): 16µs
Current - Quiescent (Max): 500nA
Voltage - Input Offset (Max): 6mV @ 5V
Current - Input Bias (Max): 10pA
CMRR, PSRR (Typ): 78dB CMRR
Hysteresis: 4.2mV
на замовлення 3229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.84 грн |
| 10+ | 86.17 грн |
| 25+ | 78.38 грн |
| 100+ | 65.47 грн |
| 250+ | 61.61 грн |
| 500+ | 59.29 грн |
| 1000+ | 58.06 грн |
| TSU101ICT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Current - Output / Channel: 11 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-70-5
Voltage - Input Offset: 3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 9 kHz
Slew Rate: 0.003V/µs
Current - Supply: 650nA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Current - Output / Channel: 11 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-70-5
Voltage - Input Offset: 3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 9 kHz
Slew Rate: 0.003V/µs
Current - Supply: 650nA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
на замовлення 2337 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.52 грн |
| 10+ | 67.50 грн |
| 25+ | 61.07 грн |
| 100+ | 50.72 грн |
| 250+ | 47.58 грн |
| 500+ | 45.69 грн |
| 1000+ | 43.41 грн |
| TSU101ILT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650nA
Slew Rate: 0.003V/µs
Gain Bandwidth Product: 9 kHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650nA
Slew Rate: 0.003V/µs
Gain Bandwidth Product: 9 kHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.77 грн |
| 10+ | 64.53 грн |
| 25+ | 58.42 грн |
| 100+ | 48.58 грн |
| 250+ | 45.59 грн |
| 500+ | 43.80 грн |
| 1000+ | 42.43 грн |































