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STR1P2UH7 STR1P2UH7 STMicroelectronics STR1P2UH7_Jun2015_DS.pdf Description: MOSFET P-CH 20V 1.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
товару немає в наявності
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STR2P3LLH6 STR2P3LLH6 STMicroelectronics en.DM00084050.pdf Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
на замовлення 3208 шт:
термін постачання 21-31 дні (днів)
8+45.02 грн
11+30.35 грн
100+21.16 грн
500+15.14 грн
1000+13.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STR2P3LLH6 STR2P3LLH6 STMicroelectronics en.DM00084050.pdf Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
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STT4P3LLH6 STT4P3LLH6 STMicroelectronics en.DM00084060.pdf Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
на замовлення 3868 шт:
термін постачання 21-31 дні (днів)
6+58.12 грн
10+38.15 грн
100+24.72 грн
500+17.79 грн
1000+16.05 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
STT4P3LLH6 STT4P3LLH6 STMicroelectronics en.DM00084060.pdf Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+15.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLVH431LICT TLVH431LICT STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Packaging: Cut Tape (CT)
Tolerance: ±1.5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
на замовлення 5150 шт:
термін постачання 21-31 дні (днів)
16+21.28 грн
23+13.79 грн
26+12.30 грн
100+9.90 грн
250+9.13 грн
500+8.66 грн
1000+8.14 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
TLVH431LICT TLVH431LICT STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Packaging: Tape & Reel (TR)
Tolerance: ±1.5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLVH431LIL3T TLVH431LIL3T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
на замовлення 294059 шт:
термін постачання 21-31 дні (днів)
15+22.92 грн
21+15.13 грн
25+13.40 грн
100+10.82 грн
250+9.99 грн
500+9.49 грн
1000+8.92 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
TLVH431LIL3T TLVH431LIL3T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
на замовлення 291000 шт:
термін постачання 21-31 дні (днів)
3000+8.10 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLVH431LIL5T TLVH431LIL5T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
товару немає в наявності
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TLVH431LIL5T TLVH431LIL5T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
товару немає в наявності
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TS4061BICT-1.225 TS4061BICT-1.225 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
товару немає в наявності
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TS4061BICT-1.225 TS4061BICT-1.225 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
товару немає в наявності
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TS4061BICT-1.25 TS4061BICT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323-3
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
на замовлення 10505 шт:
термін постачання 21-31 дні (днів)
5+66.30 грн
10+45.64 грн
25+41.08 грн
100+33.86 грн
250+31.62 грн
500+30.27 грн
1000+28.68 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TS4061BICT-1.25 TS4061BICT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+30.75 грн
6000+28.89 грн
9000+28.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TS4061BILT-1.25 TS4061BILT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Current - Cathode: 12 µA
Current - Output: 15 mA
на замовлення 5498 шт:
термін постачання 21-31 дні (днів)
6+64.66 грн
10+44.53 грн
25+40.07 грн
100+33.03 грн
250+30.83 грн
500+29.51 грн
1000+27.96 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TS4061BILT-1.25 TS4061BILT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Current - Cathode: 12 µA
Current - Output: 15 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+29.96 грн
Мінімальне замовлення: 3000
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FERD30SM100ST FERD30SM100ST STMicroelectronics en.DM00155256.pdf Description: DIODE FERD 100V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
товару немає в наявності
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LF50CV-DG LF50CV-DG STMicroelectronics en.CD00000546.pdf Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
PSRR: 76dB ~ 60dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
товару немає в наявності
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STF12N65M2 STF12N65M2 STMicroelectronics en.DM00152663.pdf Description: MOSFET N-CH 650V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
на замовлення 317 шт:
термін постачання 21-31 дні (днів)
2+175.98 грн
50+83.16 грн
100+74.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF13N65M2 STF13N65M2 STMicroelectronics en.DM00133025.pdf Description: MOSFET N-CH 650V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
5+73.67 грн
50+53.52 грн
100+53.01 грн
500+47.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STF18N65M2 STF18N65M2 STMicroelectronics en.DM00132600.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
на замовлення 2912 шт:
термін постачання 21-31 дні (днів)
2+233.28 грн
50+112.51 грн
100+101.63 грн
500+77.49 грн
1000+71.74 грн
2000+66.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF28N65M2 STF28N65M2 STMicroelectronics en.DM00150353.pdf Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
товару немає в наявності
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STF33N65M2 STF33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
2+244.74 грн
50+152.91 грн
100+148.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF40N65M2 STF40N65M2 STMicroelectronics en.DM00158277.pdf Description: MOSFET N-CH 650V 32A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STFW2N105K5 STFW2N105K5 STMicroelectronics en.DM00115969.pdf Description: MOSFET N-CH 1050V 2A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
на замовлення 502 шт:
термін постачання 21-31 дні (днів)
2+234.92 грн
30+122.86 грн
120+99.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFW40N60M2 STFW40N60M2 STMicroelectronics en.DM00116766.pdf Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
1+473.11 грн
30+260.74 грн
120+217.87 грн
В кошику  од. на суму  грн.
STFW45N65M5 STFW45N65M5 STMicroelectronics en.DM00072250.pdf Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STGIPL30C60-H STGIPL30C60-H STMicroelectronics DM00083056.pdf Description: MOD IPM SLLIMM 8PHASE 38SDIP
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STGIPS10C60T-H STGIPS10C60T-H STMicroelectronics en.DM00102031.pdf Description: MOD IPM SLLIMM 3PHASE 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товару немає в наявності
В кошику  од. на суму  грн.
STGW30H60DLFB STGW30H60DLFB STMicroelectronics Description: IGBT HB 600V 30A HS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
В кошику  од. на суму  грн.
STGWA15H120F2 STGWA15H120F2 STMicroelectronics en.DM00109377.pdf Description: IGBT HB 1200V 15A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
товару немає в наявності
В кошику  од. на суму  грн.
STGWA25H120DF2 STGWA25H120DF2 STMicroelectronics en.DM00066775.pdf Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
на замовлення 392 шт:
термін постачання 21-31 дні (днів)
1+452.65 грн
30+248.45 грн
120+207.23 грн
В кошику  од. на суму  грн.
STGWA25H120F2 STGWA25H120F2 STMicroelectronics en.DM00109190.pdf Description: IGBT HB 1200V 25A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
товару немає в наявності
В кошику  од. на суму  грн.
STI18N65M2 STI18N65M2 STMicroelectronics en.DM00132456.pdf Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STI40N65M2 STI40N65M2 STMicroelectronics en.DM00159990.pdf Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STP100N8F6 STP100N8F6 STMicroelectronics en.DM00131264.pdf Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
на замовлення 23958 шт:
термін постачання 21-31 дні (днів)
3+149.79 грн
50+58.83 грн
100+58.52 грн
500+49.15 грн
1000+45.15 грн
2000+40.05 грн
5000+38.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP13N65M2 STP13N65M2 STMicroelectronics en.DM00133031.pdf Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STP160N4LF6 STP160N4LF6 STMicroelectronics en.DM00114754.pdf Description: MOSFET N-CH 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
STP18N65M2 STP18N65M2 STMicroelectronics en.DM00132456.pdf Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
2+230.01 грн
50+110.51 грн
100+99.79 грн
500+76.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP265N6F6AG STP265N6F6AG STMicroelectronics STP265N6F6AG.pdf Description: MOSFET N-CH 60V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STP33N65M2 STP33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)
2+256.20 грн
50+160.97 грн
100+156.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP40N65M2 STP40N65M2 STMicroelectronics en.DM00159990.pdf Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STPS20SM120SFP STPS20SM120SFP STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTT 120V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
STPS20SM120ST STPS20SM120ST STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTTKY 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
STPS30SM120SFP STPS30SM120SFP STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTK 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
на замовлення 531 шт:
термін постачання 21-31 дні (днів)
4+106.41 грн
50+47.47 грн
100+44.00 грн
500+39.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STPS41H100CTY STPS41H100CTY STMicroelectronics en.DM00024413.pdf Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
2+186.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPSC20H065CTY STPSC20H065CTY STMicroelectronics en.DM00123409.pdf Description: DIODE SCHOTTKY SIC 650V TO220AB
на замовлення 362 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STTH15S12D STTH15S12D STMicroelectronics en.DM00124752.pdf Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 33331 шт:
термін постачання 21-31 дні (днів)
3+138.33 грн
50+64.70 грн
100+58.05 грн
500+43.55 грн
1000+40.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STTH15S12W STTH15S12W STMicroelectronics en.DM00124752.pdf Description: DIODE GEN PURP 1.2KV 15A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
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STTH30S12W STTH30S12W STMicroelectronics en.DM00124835.pdf Description: DIODE GEN PURP 1.2KV 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
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STTH31AC06SWL STTH31AC06SWL STMicroelectronics en.DM00135050.pdf Description: DIODE GEN PURP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
2+259.48 грн
10+224.17 грн
100+183.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STTH60AC06CWL STTH60AC06CWL STMicroelectronics en.DM00088638.pdf Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STTH75S12W STTH75S12W STMicroelectronics en.DM00124839.pdf Description: DIODE STANDARD 1200V 75A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
1+341.33 грн
30+161.93 грн
120+158.90 грн
510+141.08 грн
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STTH8S12D STTH8S12D STMicroelectronics en.DM00124704.pdf Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
4+85.95 грн
50+33.80 грн
100+32.58 грн
500+28.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STU13N65M2 STU13N65M2 STMicroelectronics en.DM00133031.pdf Description: MOSFET N-CH 650V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
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STW28N65M2 STW28N65M2 STMicroelectronics en.DM00150353.pdf Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
1+344.60 грн
30+185.36 грн
120+152.99 грн
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STW40N65M2 STW40N65M2 STMicroelectronics en.DM00158279.pdf Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
на замовлення 697 шт:
термін постачання 21-31 дні (днів)
1+463.29 грн
30+254.54 грн
120+212.50 грн
510+170.51 грн
В кошику  од. на суму  грн.
STW56N60M2 STW56N60M2 STMicroelectronics en.DM00149704.pdf Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
1+632.73 грн
30+356.88 грн
120+301.54 грн
510+253.85 грн
В кошику  од. на суму  грн.
STW56N60M2-4 STW56N60M2-4 STMicroelectronics en.DM00127606.pdf Description: MOSFET N-CH 600V 52A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+687.57 грн
30+390.51 грн
В кошику  од. на суму  грн.
STR1P2UH7 STR1P2UH7_Jun2015_DS.pdf
STR1P2UH7
Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 1.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
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STR2P3LLH6 en.DM00084050.pdf
STR2P3LLH6
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
на замовлення 3208 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.02 грн
11+30.35 грн
100+21.16 грн
500+15.14 грн
1000+13.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STR2P3LLH6 en.DM00084050.pdf
STR2P3LLH6
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
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STT4P3LLH6 en.DM00084060.pdf
STT4P3LLH6
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
на замовлення 3868 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+58.12 грн
10+38.15 грн
100+24.72 грн
500+17.79 грн
1000+16.05 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
STT4P3LLH6 en.DM00084060.pdf
STT4P3LLH6
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLVH431LICT en.DM00057412.pdf
TLVH431LICT
Виробник: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Packaging: Cut Tape (CT)
Tolerance: ±1.5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
на замовлення 5150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.28 грн
23+13.79 грн
26+12.30 грн
100+9.90 грн
250+9.13 грн
500+8.66 грн
1000+8.14 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
TLVH431LICT en.DM00057412.pdf
TLVH431LICT
Виробник: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Packaging: Tape & Reel (TR)
Tolerance: ±1.5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.63 грн
Мінімальне замовлення: 3000
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TLVH431LIL3T en.DM00057412.pdf
TLVH431LIL3T
Виробник: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
на замовлення 294059 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.92 грн
21+15.13 грн
25+13.40 грн
100+10.82 грн
250+9.99 грн
500+9.49 грн
1000+8.92 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
TLVH431LIL3T en.DM00057412.pdf
TLVH431LIL3T
Виробник: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
на замовлення 291000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.10 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLVH431LIL5T en.DM00057412.pdf
TLVH431LIL5T
Виробник: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
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TLVH431LIL5T en.DM00057412.pdf
TLVH431LIL5T
Виробник: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
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TS4061BICT-1.225 en.DM00114435.pdf
TS4061BICT-1.225
Виробник: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
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TS4061BICT-1.225 en.DM00114435.pdf
TS4061BICT-1.225
Виробник: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
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TS4061BICT-1.25 en.DM00114435.pdf
TS4061BICT-1.25
Виробник: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323-3
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
на замовлення 10505 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.30 грн
10+45.64 грн
25+41.08 грн
100+33.86 грн
250+31.62 грн
500+30.27 грн
1000+28.68 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TS4061BICT-1.25 en.DM00114435.pdf
TS4061BICT-1.25
Виробник: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+30.75 грн
6000+28.89 грн
9000+28.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TS4061BILT-1.25 en.DM00114435.pdf
TS4061BILT-1.25
Виробник: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
Tolerance: ±0.2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Current - Cathode: 12 µA
Current - Output: 15 mA
на замовлення 5498 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+64.66 грн
10+44.53 грн
25+40.07 грн
100+33.03 грн
250+30.83 грн
500+29.51 грн
1000+27.96 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TS4061BILT-1.25 en.DM00114435.pdf
TS4061BILT-1.25
Виробник: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Current - Cathode: 12 µA
Current - Output: 15 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+29.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FERD30SM100ST en.DM00155256.pdf
FERD30SM100ST
Виробник: STMicroelectronics
Description: DIODE FERD 100V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
товару немає в наявності
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LF50CV-DG en.CD00000546.pdf
LF50CV-DG
Виробник: STMicroelectronics
Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
PSRR: 76dB ~ 60dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
товару немає в наявності
В кошику  од. на суму  грн.
STF12N65M2 en.DM00152663.pdf
STF12N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
на замовлення 317 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.98 грн
50+83.16 грн
100+74.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF13N65M2 en.DM00133025.pdf
STF13N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.67 грн
50+53.52 грн
100+53.01 грн
500+47.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STF18N65M2 en.DM00132600.pdf
STF18N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
на замовлення 2912 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+233.28 грн
50+112.51 грн
100+101.63 грн
500+77.49 грн
1000+71.74 грн
2000+66.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF28N65M2 en.DM00150353.pdf
STF28N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STF33N65M2 en.DM00151754.pdf
STF33N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+244.74 грн
50+152.91 грн
100+148.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF40N65M2 en.DM00158277.pdf
STF40N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STFW2N105K5 en.DM00115969.pdf
STFW2N105K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 1050V 2A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
на замовлення 502 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.92 грн
30+122.86 грн
120+99.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFW40N60M2 en.DM00116766.pdf
STFW40N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+473.11 грн
30+260.74 грн
120+217.87 грн
В кошику  од. на суму  грн.
STFW45N65M5 en.DM00072250.pdf
STFW45N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STGIPL30C60-H DM00083056.pdf
STGIPL30C60-H
Виробник: STMicroelectronics
Description: MOD IPM SLLIMM 8PHASE 38SDIP
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STGIPS10C60T-H en.DM00102031.pdf
STGIPS10C60T-H
Виробник: STMicroelectronics
Description: MOD IPM SLLIMM 3PHASE 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товару немає в наявності
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STGW30H60DLFB
STGW30H60DLFB
Виробник: STMicroelectronics
Description: IGBT HB 600V 30A HS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
В кошику  од. на суму  грн.
STGWA15H120F2 en.DM00109377.pdf
STGWA15H120F2
Виробник: STMicroelectronics
Description: IGBT HB 1200V 15A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
товару немає в наявності
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STGWA25H120DF2 en.DM00066775.pdf
STGWA25H120DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
на замовлення 392 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+452.65 грн
30+248.45 грн
120+207.23 грн
В кошику  од. на суму  грн.
STGWA25H120F2 en.DM00109190.pdf
STGWA25H120F2
Виробник: STMicroelectronics
Description: IGBT HB 1200V 25A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
товару немає в наявності
В кошику  од. на суму  грн.
STI18N65M2 en.DM00132456.pdf
STI18N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
товару немає в наявності
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STI40N65M2 en.DM00159990.pdf
STI40N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
товару немає в наявності
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STP100N8F6 en.DM00131264.pdf
STP100N8F6
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
на замовлення 23958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.79 грн
50+58.83 грн
100+58.52 грн
500+49.15 грн
1000+45.15 грн
2000+40.05 грн
5000+38.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP13N65M2 en.DM00133031.pdf
STP13N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
товару немає в наявності
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STP160N4LF6 en.DM00114754.pdf
STP160N4LF6
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
товару немає в наявності
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STP18N65M2 en.DM00132456.pdf
STP18N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.01 грн
50+110.51 грн
100+99.79 грн
500+76.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP265N6F6AG STP265N6F6AG.pdf
STP265N6F6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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STP33N65M2 en.DM00151754.pdf
STP33N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+256.20 грн
50+160.97 грн
100+156.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP40N65M2 en.DM00159990.pdf
STP40N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
товару немає в наявності
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STPS20SM120SFP en.DM00050163.pdf
STPS20SM120SFP
Виробник: STMicroelectronics
Description: DIODE SCHOTT 120V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
товару немає в наявності
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STPS20SM120ST en.DM00050163.pdf
STPS20SM120ST
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
товару немає в наявності
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STPS30SM120SFP en.DM00050160.pdf
STPS30SM120SFP
Виробник: STMicroelectronics
Description: DIODE SCHOTTK 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
на замовлення 531 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+106.41 грн
50+47.47 грн
100+44.00 грн
500+39.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STPS41H100CTY en.DM00024413.pdf
STPS41H100CTY
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+186.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPSC20H065CTY en.DM00123409.pdf
STPSC20H065CTY
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY SIC 650V TO220AB
на замовлення 362 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STTH15S12D en.DM00124752.pdf
STTH15S12D
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 33331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+138.33 грн
50+64.70 грн
100+58.05 грн
500+43.55 грн
1000+40.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STTH15S12W en.DM00124752.pdf
STTH15S12W
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 15A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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STTH30S12W en.DM00124835.pdf
STTH30S12W
Виробник: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
товару немає в наявності
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STTH31AC06SWL en.DM00135050.pdf
STTH31AC06SWL
Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+259.48 грн
10+224.17 грн
100+183.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STTH60AC06CWL en.DM00088638.pdf
STTH60AC06CWL
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STTH75S12W en.DM00124839.pdf
STTH75S12W
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 75A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+341.33 грн
30+161.93 грн
120+158.90 грн
510+141.08 грн
В кошику  од. на суму  грн.
STTH8S12D en.DM00124704.pdf
STTH8S12D
Виробник: STMicroelectronics
Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.95 грн
50+33.80 грн
100+32.58 грн
500+28.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STU13N65M2 en.DM00133031.pdf
STU13N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
товару немає в наявності
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STW28N65M2 en.DM00150353.pdf
STW28N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+344.60 грн
30+185.36 грн
120+152.99 грн
В кошику  од. на суму  грн.
STW40N65M2 en.DM00158279.pdf
STW40N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
на замовлення 697 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+463.29 грн
30+254.54 грн
120+212.50 грн
510+170.51 грн
В кошику  од. на суму  грн.
STW56N60M2 en.DM00149704.pdf
STW56N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+632.73 грн
30+356.88 грн
120+301.54 грн
510+253.85 грн
В кошику  од. на суму  грн.
STW56N60M2-4 en.DM00127606.pdf
STW56N60M2-4
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+687.57 грн
30+390.51 грн
В кошику  од. на суму  грн.
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