Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (133506) > Сторінка 401 з 2226

Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101

Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V

Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A SMC

Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 1700V 2.6A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 1700V 2.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V

Виробник: STMicroelectronics
Description: THYRISTOR 400A 8-POWERVDFN

Виробник: STMicroelectronics
Description: THYRISTOR 400A 8-POWERVDFN

Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IC OP AMP 2CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Packaging: Tape & Reel (TR)
Package / Case: 14-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 14-LGA (2.5x3)
Part Status: Obsolete

Виробник: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V

Виробник: STMicroelectronics
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IC OP AMP 2CH 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V

Виробник: STMicroelectronics
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100

Виробник: STMicroelectronics
Description: FILTER ESD SMD

Виробник: STMicroelectronics
Description: IC EMI FILTER 1LINE FLIPCHIP

Виробник: STMicroelectronics
Description: IC EMI FILTER 2LINE FLIPCHIP

Виробник: STMicroelectronics
Description: FILTER RC(PI) 10 OHM/200PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-WFBGA, FCBGA
Size / Dimension: 0.058" L x 0.042" W (1.47mm x 1.07mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 10Ohms, C = 200pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Number of Channels: 2

Виробник: STMicroelectronics
Description: IC EMI FILTER 6LINE FLIPCHIP