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TSM2N7002KCX RFG TSM2N7002KCX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KCU RFG TAIWAN SEMICONDUCTOR pdf.php?pn=TQM2N7002KCU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; 316mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.32A
Power dissipation: 316mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KCX RFG TAIWAN SEMICONDUCTOR pdf.php?pn=TQM2N7002KCX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 416mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.37A
Power dissipation: 416mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KDCU6 RFG TAIWAN SEMICONDUCTOR pdf.php?pn=TQM2N7002KDCU6 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 330mA; 337mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.33A
Power dissipation: 337mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ43CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MBR2545CT MBR2545CT TAIWAN SEMICONDUCTOR MBR25_%20CTPbF%20Series.pdf MBR2545CT-2560CT.pdf MBR2535CT%20Rev11.pdf MBR2535CT SERIES_K2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.82V
Max. load current: 25A
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
4+138.78 грн
5+119.72 грн
10+111.41 грн
25+97.27 грн
Мінімальне замовлення: 4
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SS215L TAIWAN SEMICONDUCTOR SS22L SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 2A; reel,tape
Max. forward voltage: 0.85V
Load current: 2A
Max. off-state voltage: 150V
Case: subSMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
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DBLS207G DBLS207G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
8+62.67 грн
12+34.84 грн
100+23.20 грн
125+22.36 грн
Мінімальне замовлення: 8
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DBLS205G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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DBLS204G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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DBLS208G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1.2kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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SMAJ18CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188A TAIWAN SEMICONDUCTOR SMAJ SERIES_U2102.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ15A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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BZX84C2V7 RFG BZX84C2V7 RFG TAIWAN SEMICONDUCTOR BZX84C2V4%20SERIES_F2001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 5970 шт:
термін постачання 14-30 дні (днів)
45+10.21 грн
75+5.72 грн
100+4.56 грн
500+4.38 грн
Мінімальне замовлення: 45
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SMAJ24CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d 824501241.pdf SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.C.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf GK-SMAJ_SERIES-202604.pdf 5399_SMAJ24CA%20SMA%28DO-214AC%29.pdf SMAJ-AT%20Series%20Rev-0.pdf 3372_SMAJ24CA00S0XZ.pdf smaj%20series(400w,5v_440v).pdf SMAJ SERIES_U2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24CAH TAIWAN SEMICONDUCTOR eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf SMAJH SERIES_A2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24AH TAIWAN SEMICONDUCTOR SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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P4KE440A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Breakdown voltage: 418V
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Max. forward impulse current: 0.69A
Max. off-state voltage: 376V
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P4KE440CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.69A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Max. forward impulse current: 0.69A
Max. off-state voltage: 376V
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1N4148 A0G 1N4148 A0G TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Max. load current: 0.45A
на замовлення 552 шт:
термін постачання 14-30 дні (днів)
63+7.16 грн
87+4.82 грн
162+2.57 грн
500+1.67 грн
Мінімальне замовлення: 63
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SMAJ58A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf view?usp=sharing 3372_SMAJ58A000S0RG.pdf GK-SMAJ_SERIES-202604.pdf SMAJ%20Series%20Rev-1.pdf smaj%20series(400w,5v_440v).pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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1N4746A TAIWAN SEMICONDUCTOR 1n4736at-d.pdf 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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MUR120S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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BZV55C2V4 L0G BZV55C2V4 L0G TAIWAN SEMICONDUCTOR BZV55C2V4%20SERIES_H2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
на замовлення 6833 шт:
термін постачання 14-30 дні (днів)
39+11.64 грн
57+7.40 грн
100+4.77 грн
250+4.00 грн
500+3.51 грн
1000+3.35 грн
Мінімальне замовлення: 39
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BZX55C6V2 R0G BZX55C6V2 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1421 шт:
термін постачання 14-30 дні (днів)
34+13.43 грн
47+8.90 грн
100+5.31 грн
250+4.27 грн
500+3.60 грн
1000+3.03 грн
Мінімальне замовлення: 34
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BZX55C6V2 R0 BZX55C6V2 R0 TAIWAN SEMICONDUCTOR BZX55C10-R0.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
118+3.82 грн
163+2.55 грн
Мінімальне замовлення: 118
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BZX55C7V5 R0G BZX55C7V5 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 155 шт:
термін постачання 14-30 дні (днів)
130+3.54 грн
155+2.70 грн
Мінімальне замовлення: 130
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BZX55C9V1 R0G BZX55C9V1 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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SMBJ26A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ26AH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMBJ58A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ58AH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMBJ15CA R5G TAIWAN SEMICONDUCTOR SMBJ%20SERIES_R2104.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 7650 шт:
термін постачання 14-30 дні (днів)
3400+11.10 грн
Мінімальне замовлення: 3400
В кошику  од. на суму  грн.
GBU405 GBU405 TAIWAN SEMICONDUCTOR GBU407_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
5+91.33 грн
10+54.29 грн
20+47.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
GBU407 GBU407 TAIWAN SEMICONDUCTOR GBU407_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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SMBJ33CAH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Manufacturer series: SMBJ
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 11.8A
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
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1N4448 A0G 1N4448 A0G TAIWAN SEMICONDUCTOR 1N4148%20SERIES_J1804.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
на замовлення 2318 шт:
термін постачання 14-30 дні (днів)
32+14.33 грн
35+11.91 грн
40+10.64 грн
59+7.05 грн
100+6.34 грн
250+3.53 грн
500+3.18 грн
1000+2.64 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
1N4448 A0 1N4448 A0 TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
32+14.33 грн
35+11.91 грн
40+10.64 грн
59+7.05 грн
100+6.34 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SMAJ58CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf view?usp=sharing SMAJ%20Series%20Rev-1.pdf 3372_SMAJ58CA00S0ZG.pdf GK-SMAJ_SERIES-202604.pdf smaj%20series(400w,5v_440v).pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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DBLS152G TAIWAN SEMICONDUCTOR DBLS151G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.1kV
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1.5KE16A 1.5KE16A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5ke_datasheet.pdf?assetguid=9d02c7d2-86a5-4bff-9251-966d6af02bf7 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 160V; 66.7A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 160V
Max. forward impulse current: 66.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5KE
Tolerance: ±5%
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US1DH TAIWAN SEMICONDUCTOR US1AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Capacitance: 10pF
Reverse recovery time: 75ns
Max. forward voltage: 1V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Case: SMA
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SF1004GH TAIWAN SEMICONDUCTOR SF1001G SERIES_K2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 200V
Application: automotive industry
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SF1005GH TAIWAN SEMICONDUCTOR SF1001G SERIES_K2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
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SF1006GH TAIWAN SEMICONDUCTOR SF1001G SERIES_K2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
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SMBJ5.0CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
17+26.86 грн
20+21.28 грн
22+19.12 грн
100+11.89 грн
500+8.40 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BAT43W RHG TAIWAN SEMICONDUCTOR BAT42W SERIES_G1605.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
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SMBJ24CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ20CA SMBJ20CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2529 шт:
термін постачання 14-30 дні (днів)
16+28.65 грн
18+24.28 грн
19+22.86 грн
50+18.62 грн
100+16.71 грн
500+12.14 грн
1000+10.14 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMBJ20A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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LS4148 L1G TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 150mA; 4ns; QuadroMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
на замовлення 57500 шт:
термін постачання 14-30 дні (днів)
30000+1.26 грн
Мінімальне замовлення: 30000
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TSCDF06065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDF06065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. off-state voltage: 650V
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ES2G TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2G.pdf 5399_ES2G%20SMA.PDF ES2_1.pdf es2a.pdf 1756711237167803.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GA TAIWAN SEMICONDUCTOR ES2AA SERIES_M2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES2GAL TAIWAN SEMICONDUCTOR ES2BAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GALH TAIWAN SEMICONDUCTOR ES2BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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TSM2N7002KCX RFG
TSM2N7002KCX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KCU RFG pdf.php?pn=TQM2N7002KCU
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; 316mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.32A
Power dissipation: 316mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KCX RFG pdf.php?pn=TQM2N7002KCX
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 416mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.37A
Power dissipation: 416mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KDCU6 RFG pdf.php?pn=TQM2N7002KDCU6
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 330mA; 337mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.33A
Power dissipation: 337mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ43CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MBR2545CT MBR25_%20CTPbF%20Series.pdf MBR2545CT-2560CT.pdf MBR2535CT%20Rev11.pdf MBR2535CT SERIES_K2104.pdf
MBR2545CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.82V
Max. load current: 25A
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+138.78 грн
5+119.72 грн
10+111.41 грн
25+97.27 грн
Мінімальне замовлення: 4
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SS215L SS22L SERIES_O2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 2A; reel,tape
Max. forward voltage: 0.85V
Load current: 2A
Max. off-state voltage: 150V
Case: subSMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
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DBLS207G DBLS201G_ser.pdf
DBLS207G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+62.67 грн
12+34.84 грн
100+23.20 грн
125+22.36 грн
Мінімальне замовлення: 8
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DBLS205G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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DBLS204G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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DBLS208G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1.2kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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SMAJ18CA description tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188A SMAJ SERIES_U2102.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ15A SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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BZX84C2V7 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C2V7 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 5970 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
45+10.21 грн
75+5.72 грн
100+4.56 грн
500+4.38 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
SMAJ24CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d 824501241.pdf SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.C.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf GK-SMAJ_SERIES-202604.pdf 5399_SMAJ24CA%20SMA%28DO-214AC%29.pdf SMAJ-AT%20Series%20Rev-0.pdf 3372_SMAJ24CA00S0XZ.pdf smaj%20series(400w,5v_440v).pdf SMAJ SERIES_U2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24CAH eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf SMAJH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24AH SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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P4KE440A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Breakdown voltage: 418V
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Max. forward impulse current: 0.69A
Max. off-state voltage: 376V
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P4KE440CA littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.69A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Max. forward impulse current: 0.69A
Max. off-state voltage: 376V
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1N4148 A0G 1N4448.pdf
1N4148 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Max. load current: 0.45A
на замовлення 552 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.16 грн
87+4.82 грн
162+2.57 грн
500+1.67 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
SMAJ58A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf view?usp=sharing 3372_SMAJ58A000S0RG.pdf GK-SMAJ_SERIES-202604.pdf SMAJ%20Series%20Rev-1.pdf smaj%20series(400w,5v_440v).pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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1N4746A 1n4736at-d.pdf 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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MUR120S MUR105S SERIES_L2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH MUR105SH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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BZV55C2V4 L0G BZV55C2V4%20SERIES_H2301.pdf
BZV55C2V4 L0G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
на замовлення 6833 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.64 грн
57+7.40 грн
100+4.77 грн
250+4.00 грн
500+3.51 грн
1000+3.35 грн
Мінімальне замовлення: 39
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BZX55C6V2 R0G
BZX55C6V2 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1421 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.43 грн
47+8.90 грн
100+5.31 грн
250+4.27 грн
500+3.60 грн
1000+3.03 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BZX55C6V2 R0 BZX55C10-R0.pdf
BZX55C6V2 R0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
118+3.82 грн
163+2.55 грн
Мінімальне замовлення: 118
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BZX55C7V5 R0G
BZX55C7V5 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 155 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
130+3.54 грн
155+2.70 грн
Мінімальне замовлення: 130
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BZX55C9V1 R0G
BZX55C9V1 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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SMBJ26A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ26AH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMBJ58A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ58AH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMBJ15CA R5G SMBJ%20SERIES_R2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 7650 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3400+11.10 грн
Мінімальне замовлення: 3400
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GBU405 GBU407_ser.pdf
GBU405
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+91.33 грн
10+54.29 грн
20+47.39 грн
Мінімальне замовлення: 5
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GBU407 GBU407_ser.pdf
GBU407
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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SMBJ33CAH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Manufacturer series: SMBJ
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 11.8A
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
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1N4448 A0G 1N4148%20SERIES_J1804.pdf
1N4448 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
на замовлення 2318 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.33 грн
35+11.91 грн
40+10.64 грн
59+7.05 грн
100+6.34 грн
250+3.53 грн
500+3.18 грн
1000+2.64 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
1N4448 A0 1N4448.pdf
1N4448 A0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.33 грн
35+11.91 грн
40+10.64 грн
59+7.05 грн
100+6.34 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SMAJ58CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf view?usp=sharing SMAJ%20Series%20Rev-1.pdf 3372_SMAJ58CA00S0ZG.pdf GK-SMAJ_SERIES-202604.pdf smaj%20series(400w,5v_440v).pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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DBLS152G DBLS151G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.1kV
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1.5KE16A littelfuse_tvs_diode_1_5ke_datasheet.pdf?assetguid=9d02c7d2-86a5-4bff-9251-966d6af02bf7
1.5KE16A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 160V; 66.7A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 160V
Max. forward impulse current: 66.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5KE
Tolerance: ±5%
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US1DH US1AH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Capacitance: 10pF
Reverse recovery time: 75ns
Max. forward voltage: 1V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Case: SMA
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SF1004GH SF1001G SERIES_K2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 200V
Application: automotive industry
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SF1005GH SF1001G SERIES_K2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
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SF1006GH SF1001G SERIES_K2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
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SMBJ5.0CA SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+26.86 грн
20+21.28 грн
22+19.12 грн
100+11.89 грн
500+8.40 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BAT43W RHG BAT42W SERIES_G1605.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
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SMBJ24CA SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ20CA SMBJ.pdf
SMBJ20CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2529 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+28.65 грн
18+24.28 грн
19+22.86 грн
50+18.62 грн
100+16.71 грн
500+12.14 грн
1000+10.14 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMBJ20A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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LS4148 L1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 150mA; 4ns; QuadroMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
на замовлення 57500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30000+1.26 грн
Мінімальне замовлення: 30000
В кошику  од. на суму  грн.
TSCDF06065G1 pdf.php?pn=TSCDF06065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. off-state voltage: 650V
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ES2G ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2G.pdf 5399_ES2G%20SMA.PDF ES2_1.pdf es2a.pdf 1756711237167803.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GA ES2AA SERIES_M2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GAH ES2AAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES2GAL ES2BAL SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GALH ES2BALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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