Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50132) > Сторінка 820 з 836
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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SMAJ12AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape Mounting: SMD Max. forward impulse current: 20.1A Peak pulse power dissipation: 0.4kW Application: automotive industry Max. off-state voltage: 12V Kind of package: reel; tape Semiconductor structure: unidirectional Case: SMA Type of diode: TVS Tolerance: ±5% Breakdown voltage: 13.3V Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBRS10100CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.95V |
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В кошику од. на суму грн. | ||||||||||||||||||
| DBLS102G RDG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 40A; DBLS Type of bridge rectifier: single-phase Max. forward impulse current: 40A Case: DBLS |
на замовлення 12000 шт: термін постачання 14-30 дні (днів) |
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SMCJ36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||||
| SMCJ36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAS40-04 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 200mA; 5ns; 200mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Max. forward voltage: 1V Leakage current: 0.2mA Max. forward impulse current: 0.6A Power dissipation: 0.2W Reverse recovery time: 5ns |
на замовлення 51000 шт: термін постачання 14-30 дні (днів) |
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P4SMA33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA |
на замовлення 632 шт: термін постачання 14-30 дні (днів) |
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MUR1620CT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Reverse recovery time: 25ns Features of semiconductor devices: ultrafast switching Max. load current: 16A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUR1620CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Reverse recovery time: 25ns Features of semiconductor devices: ultrafast switching Application: automotive industry Max. load current: 16A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ18CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 21.5A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX55C3V6 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: THT Tolerance: ±5% Case: DO35 Semiconductor structure: single diode Kind of package: tape |
на замовлення 1638 шт: термін постачання 14-30 дні (днів) |
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TS34063CS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output current: 1.5A Case: SOP8 Mounting: SMD Frequency: 24...100kHz Topology: buck Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape |
на замовлення 172 шт: термін постачання 14-30 дні (днів) |
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ES2D | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.95V Kind of package: reel; tape |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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ES2DAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2DAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 0.95V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2DALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2DFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 0.95V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2DFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2DVH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.9V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC847B RFG | TAIWAN SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar Type of transistor: NPN Polarisation: bipolar Mounting: SMD |
на замовлення 1165 шт: термін постачання 14-30 дні (днів) |
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BZS55C3V3 RAG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Semiconductor structure: single diode Case - mm: 3216 Case - inch: 1206 |
на замовлення 865 шт: термін постачання 14-30 дні (днів) |
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| TSUP12122 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 0.1kV Load current: 12A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZT55C27 L1 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Kind of package: reel; tape Case: MiniMELF quadro Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU1505 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| GBU1506 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 15A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GBU1507 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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GBU15L05 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.75V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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GBU806 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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KBU806G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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SS115 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 5700 шт: термін постачання 14-30 дні (днів) |
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SS115L R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 40 шт: термін постачання 14-30 дні (днів) |
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SS115L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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SS115H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.5V Application: automotive industry Max. off-state voltage: 150V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SS115LWH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 150V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123W Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS115HM2G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA Max. forward impulse current: 40A Max. forward voltage: 0.95V Leakage current: 0.1mA Case: SMA Type of diode: Schottky rectifying |
на замовлення 217500 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V1 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape Tolerance: ±5% |
на замовлення 809 шт: термін постачання 14-30 дні (днів) |
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MUR160S | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUR160SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 50ns Application: automotive industry |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| SF38G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 125A Case: DO201AD Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SF38G-A | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO201AD Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S1KLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape Mounting: SMD Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 0.8kV Load current: 1.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1KLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 0.8kV Load current: 1.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: rectifying Reverse recovery time: 300ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TS431ACX RFG | TAIWAN SEMICONDUCTOR |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 372 шт: термін постачання 14-30 дні (днів) |
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TSM260P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23 Kind of channel: enhancement Case: SOT23 Type of transistor: P-MOSFET Kind of package: tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Gate charge: 19.5nC On-state resistance: 26mΩ Power dissipation: 1.56W Gate-source voltage: ±10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSG65N190CR RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56 Technology: GaN Features of semiconductor devices: Kelvin terminal Drain current: 11A Kind of channel: enhancement Drain-source voltage: 650V Kind of transistor: HEMT Type of transistor: N-JFET Gate-source voltage: -10...7V Kind of package: tape Case: PDFN56 On-state resistance: 0.19Ω Mounting: SMD Pulsed drain current: 19A Gate charge: 2.2nC Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TSG65N068CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 Technology: GaN Features of semiconductor devices: Kelvin terminal Drain current: 30A Kind of channel: enhancement Drain-source voltage: 650V Kind of transistor: HEMT Type of transistor: N-JFET Gate-source voltage: -10...7V Kind of package: tape Case: PDFN88 On-state resistance: 68mΩ Mounting: SMD Pulsed drain current: 60A Gate charge: 6.7nC Polarisation: unipolar |
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В кошику од. на суму грн. | |||||||||||||||||||
| TSG65N195CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88 Technology: GaN Features of semiconductor devices: Kelvin terminal Drain current: 11A Kind of channel: enhancement Drain-source voltage: 650V Kind of transistor: HEMT Type of transistor: N-JFET Gate-source voltage: -10...7V Kind of package: tape Case: PDFN88 On-state resistance: 0.195Ω Mounting: SMD Pulsed drain current: 19A Gate charge: 2.2nC Polarisation: unipolar |
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В кошику од. на суму грн. | |||||||||||||||||||
| TSG65N110CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88 Technology: GaN Features of semiconductor devices: Kelvin terminal Drain current: 18A Kind of channel: enhancement Drain-source voltage: 650V Kind of transistor: HEMT Type of transistor: N-JFET Gate-source voltage: -10...7V Kind of package: tape Case: PDFN88 On-state resistance: 0.11Ω Mounting: SMD Pulsed drain current: 35A Gate charge: 4nC Polarisation: unipolar |
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В кошику од. на суму грн. | |||||||||||||||||||
|
MBR20H200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: TO220AB Max. forward voltage: 0.97V |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| GBPC2508W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: in-tray |
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В кошику од. на суму грн. | |||||||||||||||||||
| GBPC2508 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
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|
KBU605G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 0.6kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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| KBU603G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 200V Electrical mounting: THT Load current: 6A Kind of package: in-tray |
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В кошику од. на суму грн. | |||||||||||||||||||
| KBU604G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
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В кошику од. на суму грн. | |||||||||||||||||||
| KBU606G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
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В кошику од. на суму грн. | |||||||||||||||||||
| KBU607G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Case: KBU Type of bridge rectifier: single-phase Max. forward impulse current: 175A Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated Leads: round pin Max. off-state voltage: 1kV Electrical mounting: THT Load current: 6A Kind of package: in-tray |
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В кошику од. на суму грн. | |||||||||||||||||||
|
TS34119CS RLG | TAIWAN SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 2...16V DC Amplifier class: AB Case: SOP8 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TSD10L200CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.98V Max. forward impulse current: 100A |
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В кошику од. на суму грн. | ||||||||||||||||||
|
6A60G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V Case: R6 Mounting: THT Kind of package: reel; tape Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Capacitance: 60pF Type of diode: rectifying Max. forward impulse current: 250A Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 208 шт: термін постачання 14-30 дні (днів) |
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| SMAJ12AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape
Mounting: SMD
Max. forward impulse current: 20.1A
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SMA
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13.3V
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape
Mounting: SMD
Max. forward impulse current: 20.1A
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SMA
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13.3V
Manufacturer series: SMAJ
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| MBRS10100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
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| DBLS102G RDG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40A; DBLS
Type of bridge rectifier: single-phase
Max. forward impulse current: 40A
Case: DBLS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40A; DBLS
Type of bridge rectifier: single-phase
Max. forward impulse current: 40A
Case: DBLS
на замовлення 12000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10500+ | 3.62 грн |
| SMCJ36A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ36AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| BAS40-04 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 200mA; 5ns; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward voltage: 1V
Leakage current: 0.2mA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 200mA; 5ns; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward voltage: 1V
Leakage current: 0.2mA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Reverse recovery time: 5ns
на замовлення 51000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.22 грн |
| P4SMA33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
на замовлення 632 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.35 грн |
| 26+ | 16.51 грн |
| 100+ | 9.82 грн |
| 500+ | 8.55 грн |
| MUR1620CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
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| MUR1620CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
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| SMBJ18CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZX55C3V6 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Kind of package: tape
на замовлення 1638 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.85 грн |
| 54+ | 7.87 грн |
| 84+ | 5.08 грн |
| 114+ | 3.74 грн |
| 250+ | 2.84 грн |
| 500+ | 2.54 грн |
| 1000+ | 2.13 грн |
| TS34063CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output current: 1.5A
Case: SOP8
Mounting: SMD
Frequency: 24...100kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output current: 1.5A
Case: SOP8
Mounting: SMD
Frequency: 24...100kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 172 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.49 грн |
| 15+ | 29.71 грн |
| 25+ | 25.73 грн |
| 50+ | 23.28 грн |
| ES2D |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 18+ | 23.53 грн |
| 21+ | 20.40 грн |
| 100+ | 13.37 грн |
| 500+ | 10.84 грн |
| 1000+ | 9.73 грн |
| ES2DAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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| ES2DAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| ES2DALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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| ES2DFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| ES2DFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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| ES2DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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| ES2DVH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
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| BC847B RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
на замовлення 1165 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 141+ | 3.24 грн |
| 218+ | 1.95 грн |
| 272+ | 1.56 грн |
| 500+ | 1.46 грн |
| 1000+ | 1.40 грн |
| BZS55C3V3 RAG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
на замовлення 865 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 30+ | 14.22 грн |
| 46+ | 9.35 грн |
| 100+ | 7.13 грн |
| 250+ | 5.24 грн |
| 500+ | 4.67 грн |
| TSUP12122 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZT55C27 L1 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
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| GBU1505 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| GBU1506 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| GBU1507 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| GBU15L05 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
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Мінімальне замовлення: 1000 шт
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| GBU806 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.78 грн |
| 10+ | 77.88 грн |
| 20+ | 66.87 грн |
| KBU806G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.72 грн |
| SS115 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 5700 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.70 грн |
| 28+ | 15.32 грн |
| 50+ | 10.70 грн |
| 100+ | 9.03 грн |
| 250+ | 7.12 грн |
| 500+ | 5.87 грн |
| 1000+ | 4.74 грн |
| 2000+ | 3.78 грн |
| 5000+ | 2.69 грн |
| SS115L R2 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.16 грн |
| SS115L |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.47 грн |
| 21+ | 20.57 грн |
| 100+ | 13.29 грн |
| 250+ | 11.26 грн |
| SS115H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
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| SS115LWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 150V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
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| SS115HM2G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Max. forward impulse current: 40A
Max. forward voltage: 0.95V
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
на замовлення 217500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22500+ | 1.80 грн |
| BZT52C5V1 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 809 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.03 грн |
| 71+ | 6.01 грн |
| 120+ | 3.53 грн |
| 500+ | 2.67 грн |
| MUR160S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
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| MUR160SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 23+ | 18.54 грн |
| 100+ | 11.77 грн |
| 500+ | 8.89 грн |
| 1000+ | 7.96 грн |
| 3000+ | 7.11 грн |
| SF38G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
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| SF38G-A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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| S1KLSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
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| RS1KLSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.8kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 300ns
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| TS431ACX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 372 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 30+ | 14.39 грн |
| 35+ | 12.44 грн |
| 100+ | 10.58 грн |
| TSM260P02CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
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| TSG65N190CR RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN56
On-state resistance: 0.19Ω
Mounting: SMD
Pulsed drain current: 19A
Gate charge: 2.2nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN56
On-state resistance: 0.19Ω
Mounting: SMD
Pulsed drain current: 19A
Gate charge: 2.2nC
Polarisation: unipolar
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| TSG65N068CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 68mΩ
Mounting: SMD
Pulsed drain current: 60A
Gate charge: 6.7nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 68mΩ
Mounting: SMD
Pulsed drain current: 60A
Gate charge: 6.7nC
Polarisation: unipolar
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| TSG65N195CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 0.195Ω
Mounting: SMD
Pulsed drain current: 19A
Gate charge: 2.2nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 0.195Ω
Mounting: SMD
Pulsed drain current: 19A
Gate charge: 2.2nC
Polarisation: unipolar
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| TSG65N110CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 0.11Ω
Mounting: SMD
Pulsed drain current: 35A
Gate charge: 4nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Technology: GaN
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Kind of package: tape
Case: PDFN88
On-state resistance: 0.11Ω
Mounting: SMD
Pulsed drain current: 35A
Gate charge: 4nC
Polarisation: unipolar
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| MBR20H200CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. forward voltage: 0.97V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 455.81 грн |
| GBPC2508W |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| GBPC2508 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| KBU605G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.39 грн |
| 10+ | 63.49 грн |
| KBU603G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| KBU604G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| KBU606G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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| KBU607G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 175A
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: in-tray
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| TS34119CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 2÷16VDC; Amp.class: AB; SOP8
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 2...16V DC
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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| TSD10L200CW MNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Max. forward impulse current: 100A
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| 6A60G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Capacitance: 60pF
Type of diode: rectifying
Max. forward impulse current: 250A
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.00 грн |
| 17+ | 25.65 грн |
| 18+ | 23.79 грн |
| 25+ | 22.69 грн |
| 100+ | 21.08 грн |




























