Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (49222) > Сторінка 820 з 821

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TSM70N380CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N380CI C0G TSM70N380CI C0G TAIWAN SEMICONDUCTOR TSM70N380_E1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N380CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N600CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CI C0G TSM70N600CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N750CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N750CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N900CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N900CI C0G TSM70N900CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N900CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM70NB1R4CP ROG TAIWAN SEMICONDUCTOR TSM70NB1R4CP_C1612.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.8A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: tape
Kind of channel: enhancement
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RMB4S TAIWAN SEMICONDUCTOR RMB2S_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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P6KE36CA R0 P6KE36CA R0 TAIWAN SEMICONDUCTOR P6KE_SER.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 12.6A; bidirectional; ±5%; DO15; reel,tape; 600W
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Manufacturer series: P6KE
на замовлення 220 шт:
термін постачання 14-30 дні (днів)
25+18.09 грн
35+12.14 грн
100+10.64 грн
Мінімальне замовлення: 25
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BZX55C16 R0G BZX55C16 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
В кошику  од. на суму  грн.
SMAJ43A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf 3372_SMAJ43A000S0CT.pdf SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf 824500431.pdf smaj%20series(400w,5v_440v).pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SK320B SK320B TAIWAN SEMICONDUCTOR SK320B%20N1457%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 981 шт:
термін постачання 14-30 дні (днів)
14+34.02 грн
22+19.21 грн
100+12.97 грн
500+9.64 грн
Мінімальне замовлення: 14
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SK320A SK320A TAIWAN SEMICONDUCTOR SK320A%20N0949%20REV.B.pdf SK32A SERIES_W2304.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 395 шт:
термін постачання 14-30 дні (днів)
19+24.17 грн
24+17.79 грн
100+11.47 грн
Мінімальне замовлення: 19
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SK320BH TAIWAN SEMICONDUCTOR SK32BH SERIES_B2212.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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SK320AH TAIWAN SEMICONDUCTOR SK32AH SERIES_B2304.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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SBS34 SBS34 TAIWAN SEMICONDUCTOR SBS34_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 40V; If: 3A; Ifsm: 80A; ABS
Max. off-state voltage: 40V
Load current: 3A
Case: ABS
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Features of semiconductor devices: Schottky
на замовлення 1172 шт:
термін постачання 14-30 дні (днів)
8+62.67 грн
10+47.14 грн
100+33.42 грн
500+25.61 грн
1000+24.03 грн
Мінімальне замовлення: 8
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P4SMA15A TAIWAN SEMICONDUCTOR P4SMA.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 14.3V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
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P4SMA15AH TAIWAN SEMICONDUCTOR P4SMAH SERIES_A2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 14.3V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Application: automotive industry
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SMAJ28A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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MUR820 MUR820 TAIWAN SEMICONDUCTOR MUR8x0.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; TO220AC; Ufmax: 0.975V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
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MUR820 MUR820 TAIWAN SEMICONDUCTOR MUR820%28PbF%29.pdf MUR820%2C%20RURP820.pdf MUR820 SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
8+63.57 грн
11+38.08 грн
50+34.50 грн
100+33.09 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MUR820H TAIWAN SEMICONDUCTOR MUR820%20SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
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MBRI20100CT TAIWAN SEMICONDUCTOR pdf.php?pn=MBRI20100CT Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: I2PAK
Max. forward voltage: 0.95V
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BZV55C24 L0G BZV55C24 L0G TAIWAN SEMICONDUCTOR BZV55C2V4 SERIES_H2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; MiniMELF glass
Mounting: SMD
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Semiconductor structure: single diode
Case: MiniMELF glass
Kind of package: reel; tape
на замовлення 4313 шт:
термін постачання 14-30 дні (днів)
90+5.10 грн
110+3.94 грн
250+3.48 грн
1000+3.36 грн
Мінімальне замовлення: 90
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SMBJ7V5CA SMBJ7V5CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 48A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: SMBJ
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US1J F3 US1J F3 TAIWAN SEMICONDUCTOR US1A_M.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 392 шт:
термін постачання 14-30 дні (днів)
12+37.60 грн
23+18.12 грн
29+14.55 грн
100+13.05 грн
Мінімальне замовлення: 12
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SMAJ20A TAIWAN SEMICONDUCTOR SMAJ.pdf SMAJ SERIES_U2102.pdf 5399_SMAJ20A%20SMA.PDF 3372_SMAJ20A000S0BV.pdf SMAJx.pdf view?usp=sharing smaj%20series(400w,5v_440v).pdf 824500201.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2V; 12.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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P4SMA15CA TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
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BZX55C20 R0G BZX55C20 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1087 шт:
термін постачання 14-30 дні (днів)
39+11.64 грн
57+7.32 грн
100+4.45 грн
500+3.09 грн
1000+2.66 грн
Мінімальне замовлення: 39
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TLD5S15AH TAIWAN SEMICONDUCTOR TLD5S10AH SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 16.7÷18.5V; 148A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
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SMA4S12AH TAIWAN SEMICONDUCTOR SMA4S12AH SERIES_C2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SOD128
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4S
Tolerance: ±5%
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SMA4F12AH TAIWAN SEMICONDUCTOR SMA4F12AH SERIES_C2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4F
Tolerance: ±5%
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TSM340N06CH X0G TAIWAN SEMICONDUCTOR TSM340N06_D14.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Power dissipation: 40W
Case: IPAK
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 16.6nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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TS103ACS RLG TS103ACS RLG TAIWAN SEMICONDUCTOR Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 3÷18VDC; SOP8; 5mV; Ch: dual
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Type of integrated circuit: operational amplifier
Case: SOP8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 0.5V/μs
Voltage supply range: 3...18V DC
Bandwidth: 1MHz
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
9+50.14 грн
14+30.26 грн
25+26.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BZX85C4V7 R0G BZX85C4V7 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1013 шт:
термін постачання 14-30 дні (днів)
20+22.38 грн
27+15.80 грн
100+8.73 грн
500+5.72 грн
1000+4.86 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMAJ30CAH TAIWAN SEMICONDUCTOR SMAJH%20SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ30CA M2G TAIWAN SEMICONDUCTOR SMAJ%20SERIES_U2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.3A; bidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Leakage current: 1µA
на замовлення 55000 шт:
термін постачання 14-30 дні (днів)
20834+1.74 грн
Мінімальне замовлення: 20834
В кошику  од. на суму  грн.
BZX85C6V2 R0G BZX85C6V2 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 348 шт:
термін постачання 14-30 дні (днів)
20+22.38 грн
27+15.80 грн
100+8.55 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SR1060 C0 SR1060 C0 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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MBRS2045CTH TAIWAN SEMICONDUCTOR MBRS2035CTH SERIES_A2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Application: automotive industry
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MBRS2045CT TAIWAN SEMICONDUCTOR MBRS2035CT SERIES_N2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
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MBRAD2045H TAIWAN SEMICONDUCTOR MBRAD2045H_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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SMAJ48CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ64A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ8V0CA TAIWAN SEMICONDUCTOR SMBJ SERIES_R2104.pdf Category: Diodes - Unclassified
Description: SMBJ8V0CA
на замовлення 18000 шт:
термін постачання 14-30 дні (днів)
6000+6.27 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
SMBJ43A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ43CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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TSM2302CX RFG TSM2302CX RFG TAIWAN SEMICONDUCTOR TSM2302CX.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 4914 шт:
термін постачання 14-30 дні (днів)
10+45.66 грн
31+13.63 грн
50+11.64 грн
100+10.72 грн
500+8.65 грн
1000+7.82 грн
3000+6.98 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMF12A TAIWAN SEMICONDUCTOR tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af smf50a.pdf SMF5.0A SERIES_D2103.pdf eaton-smfe-tvs-diode-power-esd-suppressor-data-sheet.pdf SMF12A%20SOD-123FL.PDF GK-SMF_SERIES-202604.pdf 3372_SMF12A0000S12A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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HER1004GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 10A
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HER1006GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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HER1007GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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HER1008GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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TSM500P02CX RFG TSM500P02CX RFG TAIWAN SEMICONDUCTOR TSM500P02CX_B1811.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 434 шт:
термін постачання 14-30 дні (днів)
17+26.86 грн
27+15.71 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N4007G 1N4007G TAIWAN SEMICONDUCTOR 1n4001-d.pdf 1N4001G-1N4007G%20N0544%20REV.A.pdf 1N4001G SERIES_P2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
на замовлення 128 шт:
термін постачання 14-30 дні (днів)
23+19.70 грн
31+13.80 грн
37+11.39 грн
100+5.48 грн
Мінімальне замовлення: 23
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TSM70N380CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N380CI C0G TSM70N380_E1706.pdf
TSM70N380CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N380CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N600CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CI C0G
TSM70N600CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N750CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N750CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N900CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N900CI C0G
TSM70N900CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N900CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM70NB1R4CP ROG TSM70NB1R4CP_C1612.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.8A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: tape
Kind of channel: enhancement
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RMB4S RMB2S_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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P6KE36CA R0 P6KE_SER.pdf
P6KE36CA R0
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 12.6A; bidirectional; ±5%; DO15; reel,tape; 600W
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Manufacturer series: P6KE
на замовлення 220 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.09 грн
35+12.14 грн
100+10.64 грн
Мінімальне замовлення: 25
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BZX55C16 R0G
BZX55C16 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
В кошику  од. на суму  грн.
SMAJ43A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf 3372_SMAJ43A000S0CT.pdf SMAJ.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf 824500431.pdf smaj%20series(400w,5v_440v).pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SK320B SK320B%20N1457%20REV.A.pdf
SK320B
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 981 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.02 грн
22+19.21 грн
100+12.97 грн
500+9.64 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SK320A SK320A%20N0949%20REV.B.pdf SK32A SERIES_W2304.pdf
SK320A
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 395 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
19+24.17 грн
24+17.79 грн
100+11.47 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
SK320BH SK32BH SERIES_B2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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SK320AH SK32AH SERIES_B2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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SBS34 SBS34_ser.pdf
SBS34
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 40V; If: 3A; Ifsm: 80A; ABS
Max. off-state voltage: 40V
Load current: 3A
Case: ABS
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Features of semiconductor devices: Schottky
на замовлення 1172 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+62.67 грн
10+47.14 грн
100+33.42 грн
500+25.61 грн
1000+24.03 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
P4SMA15A P4SMA.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 14.3V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
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P4SMA15AH P4SMAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 14.3V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Application: automotive industry
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SMAJ28A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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MUR820 MUR8x0.pdf
MUR820
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; TO220AC; Ufmax: 0.975V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
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MUR820 MUR820%28PbF%29.pdf MUR820%2C%20RURP820.pdf MUR820 SERIES_K2103.pdf
MUR820
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+63.57 грн
11+38.08 грн
50+34.50 грн
100+33.09 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MUR820H MUR820%20SERIES_K2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
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MBRI20100CT pdf.php?pn=MBRI20100CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: I2PAK
Max. forward voltage: 0.95V
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BZV55C24 L0G BZV55C2V4 SERIES_H2301.pdf
BZV55C24 L0G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; MiniMELF glass
Mounting: SMD
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Semiconductor structure: single diode
Case: MiniMELF glass
Kind of package: reel; tape
на замовлення 4313 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
90+5.10 грн
110+3.94 грн
250+3.48 грн
1000+3.36 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
SMBJ7V5CA SMBJ.pdf
SMBJ7V5CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 48A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: SMBJ
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US1J F3 US1A_M.pdf
US1J F3
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 392 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+37.60 грн
23+18.12 грн
29+14.55 грн
100+13.05 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMAJ20A SMAJ.pdf SMAJ SERIES_U2102.pdf 5399_SMAJ20A%20SMA.PDF 3372_SMAJ20A000S0BV.pdf SMAJx.pdf view?usp=sharing smaj%20series(400w,5v_440v).pdf 824500201.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2V; 12.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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P4SMA15CA tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
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BZX55C20 R0G
BZX55C20 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1087 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.64 грн
57+7.32 грн
100+4.45 грн
500+3.09 грн
1000+2.66 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
TLD5S15AH TLD5S10AH SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 16.7÷18.5V; 148A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: TLD5S
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SMA4S12AH SMA4S12AH SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SOD128
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4S
Tolerance: ±5%
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SMA4F12AH SMA4F12AH SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4F
Tolerance: ±5%
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TSM340N06CH X0G TSM340N06_D14.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Power dissipation: 40W
Case: IPAK
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 16.6nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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TS103ACS RLG
TS103ACS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 3÷18VDC; SOP8; 5mV; Ch: dual
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Type of integrated circuit: operational amplifier
Case: SOP8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 0.5V/μs
Voltage supply range: 3...18V DC
Bandwidth: 1MHz
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+50.14 грн
14+30.26 грн
25+26.69 грн
Мінімальне замовлення: 9
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BZX85C4V7 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C4V7 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1013 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.38 грн
27+15.80 грн
100+8.73 грн
500+5.72 грн
1000+4.86 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMAJ30CAH SMAJH%20SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ30CA M2G SMAJ%20SERIES_U2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.3A; bidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Leakage current: 1µA
на замовлення 55000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20834+1.74 грн
Мінімальне замовлення: 20834
В кошику  од. на суму  грн.
BZX85C6V2 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C6V2 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 348 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.38 грн
27+15.80 грн
100+8.55 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SR1060 C0
SR1060 C0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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MBRS2045CTH MBRS2035CTH SERIES_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Application: automotive industry
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MBRS2045CT MBRS2035CT SERIES_N2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
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MBRAD2045H MBRAD2045H_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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SMAJ48CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ64A SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ8V0CA SMBJ SERIES_R2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Diodes - Unclassified
Description: SMBJ8V0CA
на замовлення 18000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6000+6.27 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
SMBJ43A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ43CA SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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TSM2302CX RFG TSM2302CX.pdf
TSM2302CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 4914 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+45.66 грн
31+13.63 грн
50+11.64 грн
100+10.72 грн
500+8.65 грн
1000+7.82 грн
3000+6.98 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMF12A tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af smf50a.pdf SMF5.0A SERIES_D2103.pdf eaton-smfe-tvs-diode-power-esd-suppressor-data-sheet.pdf SMF12A%20SOD-123FL.PDF GK-SMF_SERIES-202604.pdf 3372_SMF12A0000S12A.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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HER1004GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 10A
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HER1006GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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HER1007GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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HER1008GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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TSM500P02CX RFG TSM500P02CX_B1811.pdf
TSM500P02CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 434 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+26.86 грн
27+15.71 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N4007G 1n4001-d.pdf 1N4001G-1N4007G%20N0544%20REV.A.pdf 1N4001G SERIES_P2104.pdf
1N4007G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
на замовлення 128 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.70 грн
31+13.80 грн
37+11.39 грн
100+5.48 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
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