Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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M64X202KB40 | VISHAY |
![]() Description: Potentiometer: mounting; vertical,multiturn; 2kΩ; 500mW; THT; ±10% Resistance: 2kΩ Power: 0.5W Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Leads: X Type of potentiometer: mounting Number of mechanical turns: 23 ±5 Characteristics: linear Torque: 1,5Ncm Track material: cermet Control: horizontal Kind of potentiometer: multiturn; vertical Potentiometer standard - inch: 3/8" Mounting: THT Terminal pitch: 2.54mm Operating temperature: -55...155°C |
на замовлення 213 шт: термін постачання 21-30 дні (днів) |
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T93XA202KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 2kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93XA Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64X; 67X; 3296X IP rating: IP67 Torque: 1,5Ncm |
на замовлення 154 шт: термін постачання 21-30 дні (днів) |
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T93XB202KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 2kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93XB Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Z; 67Z; 3296Z IP rating: IP67 Torque: 1,5Ncm |
на замовлення 455 шт: термін постачання 21-30 дні (днів) |
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T93YA202KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 2kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YA Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64W; 67W; 3296W IP rating: IP67 Torque: 1,5Ncm |
на замовлення 1448 шт: термін постачання 21-30 дні (днів) |
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T93YB202KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 2kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YB Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1,5Ncm |
на замовлення 1055 шт: термін постачання 21-30 дні (днів) |
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PTS120602B500RPU00 | VISHAY |
![]() Description: Sensor: temperature; Pt500; 500Ω; cl.B 0,6 %; 1206; SMD; 3850ppm/°C Resistance: 500Ω Mounting: SMD Temperature coefficient: 3850ppm/°C Operating temperature: -55...155°C Body dimensions: 0.55x3.2x1.6mm Tolerance: cl.B 0,6 % Kind of temperature sensor: Pt500 Kind of package: bulk T dimension: 0.5mm Type of sensor: temperature Case: 1206 |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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VS-HFA15TB60-M3 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 23ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: TO220AC Max. forward voltage: 1.2V Heatsink thickness: 1.14...1.4mm Reverse recovery time: 23ns |
на замовлення 1744 шт: термін постачання 21-30 дні (днів) |
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SB540-E3/54 | VISHAY |
![]() Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.48V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.48V Max. forward impulse current: 220A Kind of package: 13 inch reel Quantity in set/package: 1400pcs. |
на замовлення 2682 шт: термін постачання 21-30 дні (днів) |
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CNY17-4 | VISHAY |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Case: DIP6 Manufacturer series: CNY17 CTR@If: 16-32%@10mA Turn-off time: 25µs Collector-emitter voltage: 70V Turn-on time: 6µs |
на замовлення 546 шт: термін постачання 21-30 дні (днів) |
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CNY17-4X007T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: Gull wing 6 Manufacturer series: CNY17 CTR@If: 160-320%@50mA Turn-off time: 4.3µs Collector-emitter voltage: 70V Turn-on time: 5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ150CA-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 167V; 2.5A; bidirectional; SMB; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 150V Breakdown voltage: 167V Max. forward impulse current: 2.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 472 шт: термін постачання 21-30 дні (днів) |
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SMBJ15A-E3/52 | VISHAY |
![]() ![]() Description: Diode: TVS; 600W; 16.7V; 24.6A; unidirectional; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 24.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 4035 шт: термін постачання 21-30 дні (днів) |
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SMBJ15CA-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 16.7V; 24.6A; bidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 24.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 3713 шт: термін постачання 21-30 дні (днів) |
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CRCW12062K20FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±1%; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 2.2kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
на замовлення 1544 шт: термін постачання 21-30 дні (днів) |
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CRCW12062K20FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 2.2kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 48817 шт: термін постачання 21-30 дні (днів) |
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CRCW12062K20JNEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±5%; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 2.2kΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
на замовлення 14583 шт: термін постачання 21-30 дні (днів) |
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CRCW12062K20JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 2.2kΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 4100 шт: термін постачання 21-30 дні (днів) |
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DG212BDJ-E3 | VISHAY |
![]() Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 7÷22V,13÷36V; tube Type of integrated circuit: analog switch Number of channels: 4 Kind of package: tube Output configuration: SPST-NO Mounting: THT Case: DIP16 Resistance: 85Ω Supply voltage: 7...22V; 13...36V |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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DG212BDQ-T1-E3 | VISHAY |
![]() Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V Type of integrated circuit: analog switch Output configuration: SPST-NO Number of channels: 4 Case: TSSOP16 Supply voltage: 4.5...22V; 4.5...25V Mounting: SMD Kind of package: reel; tape Resistance: 85Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DG212BDY-E3 | VISHAY |
![]() Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube Type of integrated circuit: analog switch Number of channels: 4 Kind of package: tube Output configuration: SPST-NO Mounting: SMD Case: SO16 Resistance: 85Ω Supply voltage: 4.5...22V; 4.5...25V |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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DG212BDY-T1-E3 | VISHAY |
![]() Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape Type of integrated circuit: analog switch Output configuration: SPST-NO Number of channels: 4 Case: SO16 Supply voltage: 7...22V; 13...36V Mounting: SMD Kind of package: reel; tape Resistance: 85Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GSC00AE1001JARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 10uF; 63VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Operating temperature: -55...105°C Capacitance: 10µF Operating voltage: 63V DC Tolerance: ±20% Manufacturer series: GSC Height: 6.5mm Nominal life: 2000h Dimensions: 8x6.5mm |
на замовлення 1540 шт: термін постачання 21-30 дні (днів) |
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MAL214097805E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 10uF; 63VDC; 8x8x10mm; ±20% Type of capacitor: electrolytic Mounting: SMD Operating temperature: -55...125°C Capacitance: 10µF Operating voltage: 63V DC Body dimensions: 8x8x10mm Tolerance: ±20% |
на замовлення 360 шт: термін постачання 21-30 дні (днів) |
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BAT54C-G3-08 | VISHAY |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.24V Max. load current: 0.3A Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal |
на замовлення 5520 шт: термін постачання 21-30 дні (днів) |
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T18504KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 500kΩ Power: 0.75W Mounting: THT Tolerance: ±10% Characteristics: linear Track material: cermet Operating temperature: -55...125°C Temperature coefficient: 100ppm/°C Number of electrical turns: 15 ±1 Engineering PN: 43P; 89; 3006 IP rating: IP67 Min. insulation resistance: 1TΩ Potentiometer standard: 19mm |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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IRF630PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W; TO220AB Case: TO220AB Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 74W Mounting: THT Polarisation: unipolar Kind of package: tube Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A |
на замовлення 581 шт: термін постачання 21-30 дні (днів) |
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IRF630SPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Case: D2PAK; TO263 Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 74W Mounting: SMD Polarisation: unipolar Kind of package: tube Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A |
на замовлення 224 шт: термін постачання 21-30 дні (днів) |
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SMBJ36A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 40V; 10.3A; unidirectional; SMB; 7 inch reel,tape Mounting: SMD Case: SMB Max. off-state voltage: 36V Semiconductor structure: unidirectional Max. forward impulse current: 10.3A Breakdown voltage: 40V Leakage current: 1µA Kind of package: 7 inch reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Manufacturer series: SMBJ Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
на замовлення 4826 шт: термін постачання 21-30 дні (днів) |
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1.5KE30CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 30V; 36.2A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36.2A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BFC233860472 | VISHAY |
![]() Description: Capacitor: polypropylene; 4.7nF; 1kVDC; 300VAC; THT; ±20%; 7.5mm Type of capacitor: polypropylene Capacitance: 4.7nF Terminal pitch: 7.5mm Tolerance: ±20% Mounting: THT Operating voltage: 300V AC; 1kV DC |
на замовлення 1059 шт: термін постачання 21-30 дні (днів) |
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BFC233860473 | VISHAY |
![]() Description: Capacitor: polypropylene; 47nF; 1kVDC; 300VAC; THT; ±20%; 15mm Mounting: THT Terminal pitch: 15mm Tolerance: ±20% Type of capacitor: polypropylene Capacitance: 47nF Operating voltage: 300V AC; 1kV DC Body dimensions: 17.5x10x16.5mm |
на замовлення 751 шт: термін постачання 21-30 дні (днів) |
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MAL214860471E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 470uF; 35VDC; Ø10x16mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 35V DC Body dimensions: Ø10x16mm Terminal pitch: 5mm Tolerance: ±20% Operating temperature: -40...105°C Service life: 2000h |
на замовлення 789 шт: термін постачання 21-30 дні (днів) |
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SIHA17N80AEF-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 32A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHA17N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 45A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHB17N80AE-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 32A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHB17N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHG17N80AE-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 32A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHG17N80AEF-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 32A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHG17N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHP17N80AEF-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 32A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHP17N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MAL205757331E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø35x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 330µF Operating voltage: 450V DC Terminal pitch: 10mm Tolerance: ±20% Operating temperature: -40...85°C Service life: 5000h Body dimensions: Ø35x50mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MAL215947331E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø30x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 330µF Operating voltage: 450V DC Terminal pitch: 10mm Tolerance: ±20% Operating temperature: -40...105°C Service life: 5000h Body dimensions: Ø30x50mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRFP140PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
на замовлення 417 шт: термін постачання 21-30 дні (днів) |
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293D106X9010B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 10µF Operating voltage: 10V DC Tolerance: ±10% Mounting: SMD Case - inch: 1411 Case - mm: 3528 Operating temperature: -55...125°C Manufacturer series: Tantamount Case: B |
на замовлення 5109 шт: термін постачання 21-30 дні (днів) |
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SI7149ADP-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W Drain-source voltage: -30V Drain current: -50A On-state resistance: 9.5mΩ Type of transistor: P-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43.1nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: PowerPAK® SO8 |
на замовлення 3160 шт: термін постачання 21-30 дні (днів) |
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CRCW06031K60FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0603; 1.6kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 1.6kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 17600 шт: термін постачання 21-30 дні (днів) |
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CRCW08051K60FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 1.6kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 1.6kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 9600 шт: термін постачання 21-30 дні (днів) |
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CRCW12061K60JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 1.6kΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 1.6kΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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IRF9540PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Kind of channel: enhancement Gate charge: 61nC Kind of package: tube |
на замовлення 340 шт: термін постачання 21-30 дні (днів) |
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IRF9540SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: tube |
на замовлення 939 шт: термін постачання 21-30 дні (днів) |
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IRF9540STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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US1J-E3/61T | VISHAY |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Capacitance: 10pF Quantity in set/package: 1800pcs. |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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BAV103-GS08 | VISHAY |
![]() ![]() Description: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Case: MiniMELF; SOD80 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: 7 inch reel Features of semiconductor devices: small signal Max. load current: 0.625A Capacitance: 1.5pF Power dissipation: 0.5W Quantity in set/package: 2500pcs. |
на замовлення 97542 шт: термін постачання 21-30 дні (днів) |
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BAV103-GS18 | VISHAY |
![]() Description: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Case: MiniMELF; SOD80 Max. forward voltage: 1V Max. forward impulse current: 1A Leakage current: 15µA Kind of package: 13 inch reel Features of semiconductor devices: small signal Max. load current: 0.625A Capacitance: 1.5pF Application: automotive industry Power dissipation: 0.5W Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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VLMRGB6112-00-GS08 | VISHAY |
![]() Description: LED; RGB; SMD; 3528,PLCC6; 1.8÷2.4/2.7÷3.6/2.7÷3.6VDC; 120°; 20mA Type of diode: LED LED colour: RGB Mounting: SMD Case: 3528; PLCC6 Dimensions: 3.5x2.8x1.45mm Viewing angle: 120° LED current: 20mA Operating voltage: 1.8...2.4/2.7...3.6/2.7...3.6V DC Luminosity of red colour: 560...920mcd Luminosity of blue colour: 180...450mcd Front: flat Wavelength: 463...476nm; 519...534nm; 618...629nm Luminosity of green colour: 900...1800mcd |
на замовлення 5985 шт: термін постачання 21-30 дні (днів) |
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SMAJ10A-E3/61 | VISHAY |
![]() Description: Diode: TVS; 300W; 11.1V; 23.5A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
на замовлення 2042 шт: термін постачання 21-30 дні (днів) |
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SMAJ10CA-E3/61 | VISHAY |
![]() Description: Diode: TVS; 300W; 11.7V; 23.5A; bidirectional; SMA; TransZorb®; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
на замовлення 1171 шт: термін постачання 21-30 дні (днів) |
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CRCW0603100RFKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 0603; 100Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 100Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 57906 шт: термін постачання 21-30 дні (днів) |
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CRCW0603100RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0603; 100Ω; 0.1W; ±1%; CRCW0603 Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 100Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Manufacturer series: CRCW0603 |
на замовлення 100500 шт: термін постачання 21-30 дні (днів) |
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M64X202KB40 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; vertical,multiturn; 2kΩ; 500mW; THT; ±10%
Resistance: 2kΩ
Power: 0.5W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Leads: X
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Control: horizontal
Kind of potentiometer: multiturn; vertical
Potentiometer standard - inch: 3/8"
Mounting: THT
Terminal pitch: 2.54mm
Operating temperature: -55...155°C
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; vertical,multiturn; 2kΩ; 500mW; THT; ±10%
Resistance: 2kΩ
Power: 0.5W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Leads: X
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Control: horizontal
Kind of potentiometer: multiturn; vertical
Potentiometer standard - inch: 3/8"
Mounting: THT
Terminal pitch: 2.54mm
Operating temperature: -55...155°C
на замовлення 213 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 229.11 грн |
5+ | 131.59 грн |
9+ | 106.37 грн |
24+ | 100.86 грн |
T93XA202KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XA
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64X; 67X; 3296X
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XA
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64X; 67X; 3296X
IP rating: IP67
Torque: 1,5Ncm
на замовлення 154 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 151.04 грн |
10+ | 81.95 грн |
15+ | 64.61 грн |
40+ | 60.67 грн |
T93XB202KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Z; 67Z; 3296Z
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Z; 67Z; 3296Z
IP rating: IP67
Torque: 1,5Ncm
на замовлення 455 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 156.13 грн |
10+ | 108.74 грн |
15+ | 62.25 грн |
42+ | 58.31 грн |
T93YA202KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YA
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64W; 67W; 3296W
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YA
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64W; 67W; 3296W
IP rating: IP67
Torque: 1,5Ncm
на замовлення 1448 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 163.77 грн |
10+ | 112.67 грн |
12+ | 79.58 грн |
33+ | 74.85 грн |
1000+ | 74.07 грн |
T93YB202KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
на замовлення 1055 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 113.71 грн |
10+ | 80.37 грн |
15+ | 63.03 грн |
40+ | 59.88 грн |
PTS120602B500RPU00 |
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Виробник: VISHAY
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; Pt500; 500Ω; cl.B 0,6 %; 1206; SMD; 3850ppm/°C
Resistance: 500Ω
Mounting: SMD
Temperature coefficient: 3850ppm/°C
Operating temperature: -55...155°C
Body dimensions: 0.55x3.2x1.6mm
Tolerance: cl.B 0,6 %
Kind of temperature sensor: Pt500
Kind of package: bulk
T dimension: 0.5mm
Type of sensor: temperature
Case: 1206
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; Pt500; 500Ω; cl.B 0,6 %; 1206; SMD; 3850ppm/°C
Resistance: 500Ω
Mounting: SMD
Temperature coefficient: 3850ppm/°C
Operating temperature: -55...155°C
Body dimensions: 0.55x3.2x1.6mm
Tolerance: cl.B 0,6 %
Kind of temperature sensor: Pt500
Kind of package: bulk
T dimension: 0.5mm
Type of sensor: temperature
Case: 1206
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 333.48 грн |
5+ | 189.10 грн |
14+ | 178.86 грн |
VS-HFA15TB60-M3 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Max. forward voltage: 1.2V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 23ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Max. forward voltage: 1.2V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 23ns
на замовлення 1744 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 111.16 грн |
10+ | 70.91 грн |
16+ | 61.46 грн |
42+ | 57.52 грн |
50+ | 55.94 грн |
SB540-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.48V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.48V
Max. forward impulse current: 220A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.48V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.48V
Max. forward impulse current: 220A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
на замовлення 2682 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.43 грн |
12+ | 34.28 грн |
52+ | 18.04 грн |
141+ | 17.10 грн |
1000+ | 16.63 грн |
1400+ | 16.47 грн |
CNY17-4 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Case: DIP6
Manufacturer series: CNY17
CTR@If: 16-32%@10mA
Turn-off time: 25µs
Collector-emitter voltage: 70V
Turn-on time: 6µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Case: DIP6
Manufacturer series: CNY17
CTR@If: 16-32%@10mA
Turn-off time: 25µs
Collector-emitter voltage: 70V
Turn-on time: 6µs
на замовлення 546 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 28.00 грн |
25+ | 16.07 грн |
50+ | 14.26 грн |
67+ | 13.79 грн |
100+ | 13.55 грн |
185+ | 13.00 грн |
CNY17-4X007T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: Gull wing 6
Manufacturer series: CNY17
CTR@If: 160-320%@50mA
Turn-off time: 4.3µs
Collector-emitter voltage: 70V
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: Gull wing 6
Manufacturer series: CNY17
CTR@If: 160-320%@50mA
Turn-off time: 4.3µs
Collector-emitter voltage: 70V
Turn-on time: 5µs
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SMBJ150CA-E3/52 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167V; 2.5A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167V; 2.5A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 472 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.85 грн |
22+ | 18.52 грн |
100+ | 12.76 грн |
136+ | 6.86 грн |
372+ | 6.46 грн |
SMBJ15A-E3/52 | ![]() |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7V; 24.6A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7V; 24.6A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 4035 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.85 грн |
23+ | 17.65 грн |
28+ | 14.18 грн |
50+ | 8.35 грн |
100+ | 6.78 грн |
158+ | 5.83 грн |
434+ | 5.52 грн |
SMBJ15CA-E3/52 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7V; 24.6A; bidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7V; 24.6A; bidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 3713 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.61 грн |
30+ | 13.39 грн |
50+ | 10.64 грн |
100+ | 9.61 грн |
182+ | 5.12 грн |
499+ | 4.81 грн |
CRCW12062K20FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
на замовлення 1544 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.26 грн |
167+ | 2.36 грн |
243+ | 1.62 грн |
290+ | 1.36 грн |
500+ | 0.92 грн |
1000+ | 0.78 грн |
1276+ | 0.72 грн |
CRCW12062K20FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 48817 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
222+ | 1.92 грн |
500+ | 1.12 грн |
1000+ | 0.82 грн |
3325+ | 0.28 грн |
9143+ | 0.26 грн |
15000+ | 0.25 грн |
CRCW12062K20JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
на замовлення 14583 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
72+ | 5.94 грн |
193+ | 2.05 грн |
246+ | 1.61 грн |
295+ | 1.34 грн |
353+ | 1.12 грн |
521+ | 0.76 грн |
1000+ | 0.66 грн |
CRCW12062K20JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2.2kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 2.2kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 4100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.92 грн |
600+ | 0.76 грн |
1000+ | 0.59 грн |
3400+ | 0.27 грн |
DG212BDJ-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 7÷22V,13÷36V; tube
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: tube
Output configuration: SPST-NO
Mounting: THT
Case: DIP16
Resistance: 85Ω
Supply voltage: 7...22V; 13...36V
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 7÷22V,13÷36V; tube
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: tube
Output configuration: SPST-NO
Mounting: THT
Case: DIP16
Resistance: 85Ω
Supply voltage: 7...22V; 13...36V
на замовлення 130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 151.89 грн |
10+ | 78.79 грн |
17+ | 55.16 грн |
47+ | 52.00 грн |
DG212BDQ-T1-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: TSSOP16
Supply voltage: 4.5...22V; 4.5...25V
Mounting: SMD
Kind of package: reel; tape
Resistance: 85Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: TSSOP16
Supply voltage: 4.5...22V; 4.5...25V
Mounting: SMD
Kind of package: reel; tape
Resistance: 85Ω
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DG212BDY-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: tube
Output configuration: SPST-NO
Mounting: SMD
Case: SO16
Resistance: 85Ω
Supply voltage: 4.5...22V; 4.5...25V
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: tube
Output configuration: SPST-NO
Mounting: SMD
Case: SO16
Resistance: 85Ω
Supply voltage: 4.5...22V; 4.5...25V
на замовлення 353 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 118.80 грн |
10+ | 82.73 грн |
19+ | 49.64 грн |
51+ | 47.28 грн |
DG212BDY-T1-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: SO16
Supply voltage: 7...22V; 13...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 85Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: SO16
Supply voltage: 7...22V; 13...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 85Ω
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од. на суму грн.
GSC00AE1001JARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 10uF; 63VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 10µF
Operating voltage: 63V DC
Tolerance: ±20%
Manufacturer series: GSC
Height: 6.5mm
Nominal life: 2000h
Dimensions: 8x6.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 10uF; 63VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 10µF
Operating voltage: 63V DC
Tolerance: ±20%
Manufacturer series: GSC
Height: 6.5mm
Nominal life: 2000h
Dimensions: 8x6.5mm
на замовлення 1540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 11.71 грн |
100+ | 7.01 грн |
230+ | 4.02 грн |
640+ | 3.78 грн |
MAL214097805E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 10uF; 63VDC; 8x8x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Body dimensions: 8x8x10mm
Tolerance: ±20%
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 10uF; 63VDC; 8x8x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Body dimensions: 8x8x10mm
Tolerance: ±20%
на замовлення 360 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 123.89 грн |
10+ | 89.82 грн |
19+ | 48.85 грн |
52+ | 46.49 грн |
BAT54C-G3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
на замовлення 5520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 11.20 грн |
95+ | 4.25 грн |
105+ | 3.81 грн |
320+ | 2.92 грн |
870+ | 2.76 грн |
T18504KT10 |
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Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.75W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Number of electrical turns: 15 ±1
Engineering PN: 43P; 89; 3006
IP rating: IP67
Min. insulation resistance: 1TΩ
Potentiometer standard: 19mm
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.75W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Track material: cermet
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Number of electrical turns: 15 ±1
Engineering PN: 43P; 89; 3006
IP rating: IP67
Min. insulation resistance: 1TΩ
Potentiometer standard: 19mm
на замовлення 112 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 198.56 грн |
8+ | 125.28 грн |
10+ | 113.46 грн |
IRF630PBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
на замовлення 581 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.98 грн |
11+ | 37.19 грн |
34+ | 27.66 грн |
92+ | 26.16 грн |
IRF630SPBF | ![]() |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Case: D2PAK; TO263
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Gate charge: 43nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
на замовлення 224 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.04 грн |
23+ | 40.34 грн |
63+ | 38.14 грн |
SMBJ36A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40V; 10.3A; unidirectional; SMB; 7 inch reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Max. forward impulse current: 10.3A
Breakdown voltage: 40V
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Manufacturer series: SMBJ
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40V; 10.3A; unidirectional; SMB; 7 inch reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Max. forward impulse current: 10.3A
Breakdown voltage: 40V
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Manufacturer series: SMBJ
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
на замовлення 4826 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.46 грн |
26+ | 15.52 грн |
50+ | 10.95 грн |
100+ | 9.38 грн |
198+ | 4.65 грн |
544+ | 4.41 грн |
1.5KE30CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 36.2A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36.2A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 36.2A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36.2A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
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BFC233860472 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; 1kVDC; 300VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 4.7nF
Terminal pitch: 7.5mm
Tolerance: ±20%
Mounting: THT
Operating voltage: 300V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; 1kVDC; 300VAC; THT; ±20%; 7.5mm
Type of capacitor: polypropylene
Capacitance: 4.7nF
Terminal pitch: 7.5mm
Tolerance: ±20%
Mounting: THT
Operating voltage: 300V AC; 1kV DC
на замовлення 1059 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.06 грн |
17+ | 23.87 грн |
61+ | 15.13 грн |
168+ | 14.34 грн |
BFC233860473 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 47nF; 1kVDC; 300VAC; THT; ±20%; 15mm
Mounting: THT
Terminal pitch: 15mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 17.5x10x16.5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 47nF; 1kVDC; 300VAC; THT; ±20%; 15mm
Mounting: THT
Terminal pitch: 15mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 17.5x10x16.5mm
на замовлення 751 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.28 грн |
15+ | 27.89 грн |
50+ | 20.09 грн |
57+ | 16.15 грн |
157+ | 15.29 грн |
MAL214860471E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 35VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 35V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 35VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 35V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 2000h
на замовлення 789 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.70 грн |
10+ | 55.00 грн |
26+ | 35.93 грн |
71+ | 33.96 грн |
SIHA17N80AEF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 32A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 32A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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SIHA17N80E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 45A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 45A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
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SIHB17N80AE-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB17N80E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHG17N80AE-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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SIHG17N80AEF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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SIHG17N80E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
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SIHP17N80AEF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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SIHP17N80E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
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MAL205757331E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 450V DC
Terminal pitch: 10mm
Tolerance: ±20%
Operating temperature: -40...85°C
Service life: 5000h
Body dimensions: Ø35x50mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 450V DC
Terminal pitch: 10mm
Tolerance: ±20%
Operating temperature: -40...85°C
Service life: 5000h
Body dimensions: Ø35x50mm
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MAL215947331E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø30x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 450V DC
Terminal pitch: 10mm
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 5000h
Body dimensions: Ø30x50mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø30x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 450V DC
Terminal pitch: 10mm
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 5000h
Body dimensions: Ø30x50mm
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IRFP140PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 417 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 218.92 грн |
5+ | 90.61 грн |
14+ | 70.13 грн |
37+ | 66.19 грн |
293D106X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 10V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 10V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: B
на замовлення 5109 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.49 грн |
28+ | 14.18 грн |
50+ | 8.59 грн |
100+ | 7.09 грн |
171+ | 5.44 грн |
468+ | 5.12 грн |
SI7149ADP-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 9.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43.1nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: PowerPAK® SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W
Drain-source voltage: -30V
Drain current: -50A
On-state resistance: 9.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43.1nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: PowerPAK® SO8
на замовлення 3160 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.79 грн |
32+ | 29.39 грн |
87+ | 27.74 грн |
500+ | 26.63 грн |
CRCW06031K60FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 1.6kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 1.6kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 1.6kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 1.6kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 17600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.90 грн |
500+ | 0.92 грн |
1000+ | 0.55 грн |
4000+ | 0.24 грн |
5000+ | 0.22 грн |
CRCW08051K60FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.6kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.6kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.6kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.6kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 9600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 2.02 грн |
500+ | 0.99 грн |
1000+ | 0.61 грн |
4100+ | 0.23 грн |
5000+ | 0.21 грн |
CRCW12061K60JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.6kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 1.6kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.6kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 1.6kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.43 грн |
600+ | 0.78 грн |
1000+ | 0.50 грн |
IRF9540PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
на замовлення 340 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 92.49 грн |
23+ | 41.37 грн |
62+ | 39.08 грн |
IRF9540SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
на замовлення 939 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 82.31 грн |
10+ | 70.13 грн |
19+ | 49.64 грн |
51+ | 47.28 грн |
IRF9540STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
US1J-E3/61T | ![]() |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Capacitance: 10pF
Quantity in set/package: 1800pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Capacitance: 10pF
Quantity in set/package: 1800pcs.
на замовлення 960 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.15 грн |
24+ | 16.78 грн |
100+ | 9.38 грн |
191+ | 4.89 грн |
523+ | 4.57 грн |
BAV103-GS08 | ![]() |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 1.5pF
Power dissipation: 0.5W
Quantity in set/package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 1.5pF
Power dissipation: 0.5W
Quantity in set/package: 2500pcs.
на замовлення 97542 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
47+ | 9.16 грн |
65+ | 6.07 грн |
87+ | 4.54 грн |
123+ | 3.21 грн |
861+ | 1.07 грн |
2368+ | 1.02 грн |
2500+ | 1.01 грн |
BAV103-GS18 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Leakage current: 15µA
Kind of package: 13 inch reel
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 1.5pF
Application: automotive industry
Power dissipation: 0.5W
Quantity in set/package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Leakage current: 15µA
Kind of package: 13 inch reel
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 1.5pF
Application: automotive industry
Power dissipation: 0.5W
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику
од. на суму грн.
VLMRGB6112-00-GS08 |
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Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; RGB; SMD; 3528,PLCC6; 1.8÷2.4/2.7÷3.6/2.7÷3.6VDC; 120°; 20mA
Type of diode: LED
LED colour: RGB
Mounting: SMD
Case: 3528; PLCC6
Dimensions: 3.5x2.8x1.45mm
Viewing angle: 120°
LED current: 20mA
Operating voltage: 1.8...2.4/2.7...3.6/2.7...3.6V DC
Luminosity of red colour: 560...920mcd
Luminosity of blue colour: 180...450mcd
Front: flat
Wavelength: 463...476nm; 519...534nm; 618...629nm
Luminosity of green colour: 900...1800mcd
Category: SMD colour LEDs
Description: LED; RGB; SMD; 3528,PLCC6; 1.8÷2.4/2.7÷3.6/2.7÷3.6VDC; 120°; 20mA
Type of diode: LED
LED colour: RGB
Mounting: SMD
Case: 3528; PLCC6
Dimensions: 3.5x2.8x1.45mm
Viewing angle: 120°
LED current: 20mA
Operating voltage: 1.8...2.4/2.7...3.6/2.7...3.6V DC
Luminosity of red colour: 560...920mcd
Luminosity of blue colour: 180...450mcd
Front: flat
Wavelength: 463...476nm; 519...534nm; 618...629nm
Luminosity of green colour: 900...1800mcd
на замовлення 5985 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.22 грн |
10+ | 47.43 грн |
24+ | 40.03 грн |
50+ | 39.16 грн |
64+ | 37.82 грн |
100+ | 36.32 грн |
SMAJ10A-E3/61 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 11.1V; 23.5A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 11.1V; 23.5A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
на замовлення 2042 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.76 грн |
27+ | 14.73 грн |
100+ | 5.91 грн |
178+ | 5.20 грн |
487+ | 4.96 грн |
SMAJ10CA-E3/61 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 11.7V; 23.5A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 11.7V; 23.5A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
на замовлення 1171 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.52 грн |
32+ | 12.69 грн |
50+ | 9.38 грн |
100+ | 8.27 грн |
193+ | 4.81 грн |
529+ | 4.57 грн |
CRCW0603100RFKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 100Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 100Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 100Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 100Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 57906 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
119+ | 3.58 грн |
675+ | 0.58 грн |
893+ | 0.44 грн |
1021+ | 0.39 грн |
1507+ | 0.26 грн |
2500+ | 0.22 грн |
5000+ | 0.19 грн |
7801+ | 0.12 грн |
21453+ | 0.11 грн |
CRCW0603100RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 100Ω; 0.1W; ±1%; CRCW0603
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 100Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Manufacturer series: CRCW0603
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 100Ω; 0.1W; ±1%; CRCW0603
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 100Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Manufacturer series: CRCW0603
на замовлення 100500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
500+ | 0.87 грн |
2000+ | 0.20 грн |
5000+ | 0.09 грн |
12200+ | 0.08 грн |
33500+ | 0.07 грн |