Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38083) > Сторінка 150 з 635

Обрати Сторінку:   [  << Попередня Сторінка ]  1 63 126 145 146 147 148 149 150 151 152 153 154 155 189 252 315 378 441 504 567 630 635  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
EDF1BM-E3/45 EDF1BM-E3/45 Vishay General Semiconductor - Diodes Division edf1am.pdf Description: BRIDGE RECT 1PHASE 100V 1A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3262 шт:
термін постачання 21-31 дні (днів)
4+87.57 грн
50+ 67.57 грн
100+ 53.54 грн
500+ 42.59 грн
1000+ 34.7 грн
2000+ 32.66 грн
Мінімальне замовлення: 4
EDF1BS-E3/45 EDF1BS-E3/45 Vishay General Semiconductor - Diodes Division edf1as.pdf Description: BRIDGE RECT 1PHASE 100V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
EDF1DM-E3/45 EDF1DM-E3/45 Vishay General Semiconductor - Diodes Division edf1am.pdf Description: BRIDGE RECT 1PHASE 200V 1A DFM
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)
4+96.17 грн
10+ 82.44 грн
100+ 64.32 грн
500+ 49.86 грн
1000+ 40.85 грн
Мінімальне замовлення: 4
EDF1DS-E3/45 EDF1DS-E3/45 Vishay General Semiconductor - Diodes Division edf1as.pdf Description: BRIDGE RECT 1PHASE 200V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4855 шт:
термін постачання 21-31 дні (днів)
4+80.53 грн
50+ 62.55 грн
100+ 49.58 грн
500+ 39.44 грн
1000+ 32.12 грн
2000+ 30.24 грн
Мінімальне замовлення: 4
FEP16AT-E3/45 FEP16AT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 50V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
FEP16ATHE3/45 FEP16ATHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 50V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
FEP16BT-E3/45 FEP16BT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)
4+103.21 грн
50+ 80.1 грн
100+ 63.47 грн
500+ 50.49 грн
1000+ 41.13 грн
Мінімальне замовлення: 4
FEP16BTHE3/45 FEP16BTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
FEP16CT-E3/45 FEP16CT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 150V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
FEP16DT-E3/45 FEP16DT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 13114 шт:
термін постачання 21-31 дні (днів)
4+100.86 грн
50+ 78.18 грн
100+ 61.97 грн
500+ 49.29 грн
1000+ 40.15 грн
2000+ 37.8 грн
5000+ 35.41 грн
10000+ 33.77 грн
Мінімальне замовлення: 4
FEP16DTHE3/45 FEP16DTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
FEP16FT-E3/45 FEP16FT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 300V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
5+75.84 грн
Мінімальне замовлення: 5
FEP16FTHE3/45 FEP16FTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 300V 16A TO220AB
товар відсутній
FEP16GT-E3/45 FEP16GT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 400V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
3+107.12 грн
50+ 83.03 грн
100+ 68.3 грн
Мінімальне замовлення: 3
FEP16GTHE3/45 FEP16GTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 400V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
FEP16HT-E3/45 FEP16HT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 500V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
на замовлення 1027 шт:
термін постачання 21-31 дні (днів)
5+75.84 грн
50+ 58.37 грн
100+ 48.01 грн
500+ 40.69 грн
Мінімальне замовлення: 5
FEP16JT-E3/45 FEP16JT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 834 шт:
термін постачання 21-31 дні (днів)
3+104.77 грн
50+ 81.06 грн
100+ 66.69 грн
500+ 52.96 грн
Мінімальне замовлення: 3
FEP30AP-E3/45 FEP30AP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 50V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
FEP30BP-E3/45 FEP30BP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 100V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
FEP30CP-E3/45 FEP30CP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 150V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
FEP30FP-E3/45 FEP30FP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 300V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
FEP30HP-E3/45 FEP30HP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 500V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
на замовлення 649 шт:
термін постачання 21-31 дні (днів)
3+134.48 грн
30+ 102.1 грн
120+ 87.51 грн
510+ 80.33 грн
Мінімальне замовлення: 3
FEP30JP-E3/45 FEP30JP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 600V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
2+190 грн
30+ 145.24 грн
Мінімальне замовлення: 2
FEPB16DTHE3/45 FEPB16DTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
товар відсутній
FEPB16JTHE3/45 FEPB16JTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 600V 8A TO263AB
товар відсутній
FEPF16DT-E3/45 FEPF16DT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 8A ITO220AB
товар відсутній
FEPF16DTHE3/45 FEPF16DTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 8A ITO220AB
товар відсутній
FEPF16FT-E3/45 FEPF16FT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 300V 8A ITO220AB
товар відсутній
FEPF16FTHE3/45 FEPF16FTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 300V 8A ITO220AB
товар відсутній
FES16BT-E3/45 FES16BT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO220AC
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
3+114.15 грн
10+ 98.11 грн
100+ 76.5 грн
500+ 59.31 грн
Мінімальне замовлення: 3
FES16DT-E3/45 FES16DT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 366 шт:
термін постачання 21-31 дні (днів)
4+98.52 грн
50+ 76.18 грн
100+ 60.37 грн
Мінімальне замовлення: 4
FES16GT-E3/45 FES16GT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 714 шт:
термін постачання 21-31 дні (днів)
3+118.84 грн
10+ 102.1 грн
100+ 79.58 грн
500+ 61.69 грн
Мінімальне замовлення: 3
FES16GTHE3/45 FES16GTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
FES16JT-E3/45 FES16JT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 600V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3111 шт:
термін постачання 21-31 дні (днів)
3+109.46 грн
50+ 84.67 грн
100+ 67.1 грн
500+ 53.37 грн
1000+ 43.48 грн
2000+ 40.93 грн
Мінімальне замовлення: 3
FES8AT-E3/45 FES8AT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
FES8ATHE3/45 FES8ATHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
FES8BT-E3/45 FES8BT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 100V 8A TO220AC
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+89.92 грн
10+ 77.32 грн
100+ 60.28 грн
500+ 46.73 грн
1000+ 38.29 грн
Мінімальне замовлення: 4
FES8BTHE3/45 FES8BTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 100V 8A TO220AC
товар відсутній
FES8CTHE3/45 FES8CTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 150V 8A TO220AC
товар відсутній
FES8DT-E3/45 FES8DT-E3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1437 шт:
термін постачання 21-31 дні (днів)
4+78.97 грн
50+ 61 грн
100+ 48.34 грн
500+ 38.45 грн
1000+ 31.32 грн
Мінімальне замовлення: 4
FES8DTHE3/45 FES8DTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
FES8FT-E3/45 FES8FT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
FES8FTHE3/45 FES8FTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
FES8GT-E3/45 FES8GT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
4+78.19 грн
10+ 61.59 грн
100+ 47.9 грн
500+ 38.1 грн
Мінімальне замовлення: 4
FES8GTHE3/45 FES8GTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
FES8HT-E3/45 FES8HT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товар відсутній
FES8HTHE3/45 FES8HTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Qualification: AEC-Q101
товар відсутній
FES8JT-E3/45 FES8JT-E3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
4+86.01 грн
50+ 66.42 грн
Мінімальне замовлення: 4
FES8JTHE3/45 FES8JTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FESB16AT-E3/45 FESB16AT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 50V 16A TO263AB
товар відсутній
FESB16ATHE3/45 FESB16ATHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 50V 16A TO263AB
товар відсутній
FESB16BT-E3/45 FESB16BT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
FESB16BTHE3/45 FESB16BTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
FESB16CT-E3/45 FESB16CT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
товар відсутній
FESB16CTHE3/45 FESB16CTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
товар відсутній
FESB16DTHE3/45 FESB16DTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 200V 16A TO263AB
товар відсутній
FESB16FT-E3/45 FESB16FT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 300V 16A TO263AB
товар відсутній
FESB16FTHE3/45 FESB16FTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 300V 16A TO263AB
товар відсутній
FESB16GT-E3/45 FESB16GT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO263AB
товар відсутній
FESB16GTHE3/45 FESB16GTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO263AB
товар відсутній
EDF1BM-E3/45 edf1am.pdf
EDF1BM-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 1A DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3262 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+87.57 грн
50+ 67.57 грн
100+ 53.54 грн
500+ 42.59 грн
1000+ 34.7 грн
2000+ 32.66 грн
Мінімальне замовлення: 4
EDF1BS-E3/45 edf1as.pdf
EDF1BS-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
EDF1DM-E3/45 edf1am.pdf
EDF1DM-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1A DFM
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+96.17 грн
10+ 82.44 грн
100+ 64.32 грн
500+ 49.86 грн
1000+ 40.85 грн
Мінімальне замовлення: 4
EDF1DS-E3/45 edf1as.pdf
EDF1DS-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1A DFS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+80.53 грн
50+ 62.55 грн
100+ 49.58 грн
500+ 39.44 грн
1000+ 32.12 грн
2000+ 30.24 грн
Мінімальне замовлення: 4
FEP16AT-E3/45 fep16jt.pdf
FEP16AT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 50V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
FEP16ATHE3/45 fep16jt.pdf
FEP16ATHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 50V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
FEP16BT-E3/45 fep16jt.pdf
FEP16BT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+103.21 грн
50+ 80.1 грн
100+ 63.47 грн
500+ 50.49 грн
1000+ 41.13 грн
Мінімальне замовлення: 4
FEP16BTHE3/45 fep16jt.pdf
FEP16BTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
FEP16CT-E3/45 fep16jt.pdf
FEP16CT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 150V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
FEP16DT-E3/45 fep16jt.pdf
FEP16DT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 13114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+100.86 грн
50+ 78.18 грн
100+ 61.97 грн
500+ 49.29 грн
1000+ 40.15 грн
2000+ 37.8 грн
5000+ 35.41 грн
10000+ 33.77 грн
Мінімальне замовлення: 4
FEP16DTHE3/45 fep16jt.pdf
FEP16DTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
FEP16FT-E3/45 fep16jt.pdf
FEP16FT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+75.84 грн
Мінімальне замовлення: 5
FEP16FTHE3/45 fep16jt.pdf
FEP16FTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 16A TO220AB
товар відсутній
FEP16GT-E3/45 fep16jt.pdf
FEP16GT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+107.12 грн
50+ 83.03 грн
100+ 68.3 грн
Мінімальне замовлення: 3
FEP16GTHE3/45 fep16jt.pdf
FEP16GTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
FEP16HT-E3/45 fep16jt.pdf
FEP16HT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 500V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
на замовлення 1027 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+75.84 грн
50+ 58.37 грн
100+ 48.01 грн
500+ 40.69 грн
Мінімальне замовлення: 5
FEP16JT-E3/45 fep16jt.pdf
FEP16JT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 834 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+104.77 грн
50+ 81.06 грн
100+ 66.69 грн
500+ 52.96 грн
Мінімальне замовлення: 3
FEP30AP-E3/45 fep30xp-e3.pdf
FEP30AP-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 50V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
FEP30BP-E3/45 fep30xp-e3.pdf
FEP30BP-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
FEP30CP-E3/45 fep30xp-e3.pdf
FEP30CP-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 150V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
FEP30FP-E3/45 fep30xp-e3.pdf
FEP30FP-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
FEP30HP-E3/45 fep30xp-e3.pdf
FEP30HP-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 500V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
на замовлення 649 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+134.48 грн
30+ 102.1 грн
120+ 87.51 грн
510+ 80.33 грн
Мінімальне замовлення: 3
FEP30JP-E3/45 fep30xp-e3.pdf
FEP30JP-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+190 грн
30+ 145.24 грн
Мінімальне замовлення: 2
FEPB16DTHE3/45 fep16jt.pdf
FEPB16DTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
товар відсутній
FEPB16JTHE3/45 fep16jt.pdf
FEPB16JTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AB
товар відсутній
FEPF16DT-E3/45 fep16jt.pdf
FEPF16DT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A ITO220AB
товар відсутній
FEPF16DTHE3/45 fep16jt.pdf
FEPF16DTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A ITO220AB
товар відсутній
FEPF16FT-E3/45 fep16jt.pdf
FEPF16FT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 8A ITO220AB
товар відсутній
FEPF16FTHE3/45 fep16jt.pdf
FEPF16FTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 8A ITO220AB
товар відсутній
FES16BT-E3/45 fes16jt.pdf
FES16BT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO220AC
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.15 грн
10+ 98.11 грн
100+ 76.5 грн
500+ 59.31 грн
Мінімальне замовлення: 3
FES16DT-E3/45 fes16jt.pdf
FES16DT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 366 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+98.52 грн
50+ 76.18 грн
100+ 60.37 грн
Мінімальне замовлення: 4
FES16GT-E3/45 fes16jt.pdf
FES16GT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 714 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+118.84 грн
10+ 102.1 грн
100+ 79.58 грн
500+ 61.69 грн
Мінімальне замовлення: 3
FES16GTHE3/45 fes16jt.pdf
FES16GTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
FES16JT-E3/45 fes16jt.pdf
FES16JT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3111 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+109.46 грн
50+ 84.67 грн
100+ 67.1 грн
500+ 53.37 грн
1000+ 43.48 грн
2000+ 40.93 грн
Мінімальне замовлення: 3
FES8AT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8AT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
FES8ATHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8ATHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
FES8BT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8BT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO220AC
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+89.92 грн
10+ 77.32 грн
100+ 60.28 грн
500+ 46.73 грн
1000+ 38.29 грн
Мінімальне замовлення: 4
FES8BTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8BTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO220AC
товар відсутній
FES8CTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8CTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO220AC
товар відсутній
FES8DT-E3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8DT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1437 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+78.97 грн
50+ 61 грн
100+ 48.34 грн
500+ 38.45 грн
1000+ 31.32 грн
Мінімальне замовлення: 4
FES8DTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8DTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
FES8FT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8FT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
FES8FTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8FTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
FES8GT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8GT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+78.19 грн
10+ 61.59 грн
100+ 47.9 грн
500+ 38.1 грн
Мінімальне замовлення: 4
FES8GTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8GTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
FES8HT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8HT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товар відсутній
FES8HTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8HTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Qualification: AEC-Q101
товар відсутній
FES8JT-E3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8JT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+86.01 грн
50+ 66.42 грн
Мінімальне замовлення: 4
FES8JTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8JTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FESB16AT-E3/45 fes16jt.pdf
FESB16AT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
товар відсутній
FESB16ATHE3/45 fes16jt.pdf
FESB16ATHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
товар відсутній
FESB16BT-E3/45 fes16jt.pdf
FESB16BT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
FESB16BTHE3/45 fes16jt.pdf
FESB16BTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
товар відсутній
FESB16CT-E3/45 fes16jt.pdf
FESB16CT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
товар відсутній
FESB16CTHE3/45 fes16jt.pdf
FESB16CTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
товар відсутній
FESB16DTHE3/45 fes16jt.pdf
FESB16DTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
товар відсутній
FESB16FT-E3/45 fes16jt.pdf
FESB16FT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
товар відсутній
FESB16FTHE3/45 fes16jt.pdf
FESB16FTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
товар відсутній
FESB16GT-E3/45 fes16jt.pdf
FESB16GT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
товар відсутній
FESB16GTHE3/45 fes16jt.pdf
FESB16GTHE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 63 126 145 146 147 148 149 150 151 152 153 154 155 189 252 315 378 441 504 567 630 635  [ Наступна Сторінка >> ]