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US1BHE3/61T US1BHE3/61T Vishay General Semiconductor - Diodes Division irf520.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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US1DHE3/61T US1DHE3/61T Vishay General Semiconductor - Diodes Division irl620.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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US1GHE3/61T US1GHE3/61T Vishay General Semiconductor - Diodes Division irl620.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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US1JHE3/61T US1JHE3/61T Vishay General Semiconductor - Diodes Division irl620.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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US1KHE3/61T US1KHE3/61T Vishay General Semiconductor - Diodes Division irl620.pdf Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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US1MHE3/61T US1MHE3/61T Vishay General Semiconductor - Diodes Division irl620.pdf Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
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USB260-E3/52T USB260-E3/52T Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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USB260HE3/52T USB260HE3/52T Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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V10P10HM3/86A V10P10HM3/86A Vishay General Semiconductor - Diodes Division v10p10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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V12P10HM3/86A V12P10HM3/86A Vishay General Semiconductor - Diodes Division v12p10.pdf Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
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V12P12-M3/86A V12P12-M3/86A Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
1500+28.03 грн
3000+25.29 грн
4500+25.26 грн
Мінімальне замовлення: 1500
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V8P10HM3/86A V8P10HM3/86A Vishay General Semiconductor - Diodes Division v8p10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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ZGL41-100-E3/96 ZGL41-100-E3/96 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 100V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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ZGL41-100A-E3/96 ZGL41-100A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 100V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+11.53 грн
Мінімальне замовлення: 1500
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ZGL41-110-E3/96 ZGL41-110-E3/96 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 110V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
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ZGL41-110A-E3/96 ZGL41-110A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 110V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
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ZGL41-120-E3/96 ZGL41-120-E3/96 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 120V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 380 Ohms
Supplier Device Package: GL41 (DO-213AB)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
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ZGL41-140A-E3/96 ZGL41-140A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 140V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 140 V
Impedance (Max) (Zzt): 525 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 106.4 V
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ZGL41-150-E3/96 ZGL41-150-E3/96 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 150V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
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ZGL41-150A-E3/96 ZGL41-150A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 150V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
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ZGL41-160A-E3/96 ZGL41-160A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 160V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
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ZGL41-170-E3/96 ZGL41-170-E3/96 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 170V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 170 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 129.2 V
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ZGL41-170A-E3/96 ZGL41-170A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 170V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 170 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 129.2 V
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ZGL41-180-E3/96 ZGL41-180-E3/96 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 180V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 136.9 V
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ZGL41-180A-E3/96 ZGL41-180A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 180V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 136.9 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+15.32 грн
Мінімальне замовлення: 1500
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ZGL41-190A-E3/96 ZGL41-190A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 190V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 190 V
Impedance (Max) (Zzt): 1050 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 144.4 V
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ZGL41-200-E3/96 ZGL41-200-E3/96 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 200V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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ZGL41-200A-E3/96 ZGL41-200A-E3/96 Vishay General Semiconductor - Diodes Division zgl41.pdf Description: DIODE ZENER 200V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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3N246-E4/51 3N246-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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3N251-E4/51 3N251-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M,%203N246_thru_52.pdf Description: BRIDGE RECT 1P 800V 1.5A KBPM
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3N256-E4/51 3N256-E4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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3N257-E4/51 3N257-E4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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3N258-E4/51 3N258-E4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
товару немає в наявності
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3N259-E4/51 3N259-E4/51 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KBP005M-E4/51 KBP005M-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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KBP01M-E4/51 KBP01M-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 100V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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KBP02M-E4/51 KBP02M-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 200V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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KBP04M-E4/51 KBP04M-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 400V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP06M-E4/51 KBP06M-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP08M-E4/51 KBP08M-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP10M-E4/51 KBP10M-E4/51 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
2KBP005M-E4/45 2KBP005M-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
2KBP01M-E4/45 2KBP01M-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 100V 2A KBPM
товару немає в наявності
В кошику  од. на суму  грн.
2KBP02M-E4/45 2KBP02M-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
2KBP04M-E4/45 2KBP04M-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
2KBP06M-E4/45 2KBP06M-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
2KBP08M-E4/45 2KBP08M-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
2KBP10M-E4/45 2KBP10M-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
3KBP02M-E4/45 3KBP02M-E4/45 Vishay General Semiconductor - Diodes Division 3KBP005,01,02,04,06,08M.pdf Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
3KBP04M-E4/45 3KBP04M-E4/45 Vishay General Semiconductor - Diodes Division 3KBP005,01,02,04,06,08M.pdf Description: BRIDGE RECT 1PHASE 400V 3A KBPM
товару немає в наявності
В кошику  од. на суму  грн.
3KBP06M-E4/45 3KBP06M-E4/45 Vishay General Semiconductor - Diodes Division 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
3KBP08M-E4/45 3KBP08M-E4/45 Vishay General Semiconductor - Diodes Division 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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3N251-E4/45 3N251-E4/45 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M,%203N246_thru_52.pdf Description: BRIDGE RECT 1P 800V 1.5A KBPM
товару немає в наявності
В кошику  од. на суму  грн.
3N256-E4/45 3N256-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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3N257-E4/45 3N257-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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3N258-E4/45 3N258-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M,3N253-259.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBPM
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3N259-E4/45 3N259-E4/45 Vishay General Semiconductor - Diodes Division 2KBP005M-10M%2C3N253-259.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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B250C800DM-E3/45 B250C800DM-E3/45 Vishay General Semiconductor - Diodes Division 800dm.pdf Description: BRIDGE RECT 1P 400V 900MA DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 384 шт:
термін постачання 21-31 дні (днів)
6+62.88 грн
50+27.81 грн
100+24.55 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
B380C800DM-E3/45 B380C800DM-E3/45 Vishay General Semiconductor - Diodes Division 800dm.pdf Description: BRIDGE RECT 1P 600V 900MA DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4860 шт:
термін постачання 21-31 дні (днів)
8+45.73 грн
10+37.59 грн
100+26.10 грн
500+19.12 грн
1000+15.54 грн
2000+13.89 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
B40C800DM-E3/45 B40C800DM-E3/45 Vishay General Semiconductor - Diodes Division 800dm.pdf Description: BRIDGE RECT 1PHASE 65V 900MA DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Active
Voltage - Peak Reverse (Max): 65 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 65 V
на замовлення 6210 шт:
термін постачання 21-31 дні (днів)
5+70.23 грн
50+31.03 грн
100+27.40 грн
500+19.73 грн
1000+17.80 грн
2000+16.18 грн
5000+14.19 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
US1BHE3/61T irf520.pdf
US1BHE3/61T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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US1DHE3/61T irl620.pdf
US1DHE3/61T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
US1GHE3/61T irl620.pdf
US1GHE3/61T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
US1JHE3/61T irl620.pdf
US1JHE3/61T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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US1KHE3/61T irl620.pdf
US1KHE3/61T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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US1MHE3/61T irl620.pdf
US1MHE3/61T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
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USB260-E3/52T
USB260-E3/52T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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USB260HE3/52T
USB260HE3/52T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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V10P10HM3/86A v10p10.pdf
V10P10HM3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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V12P10HM3/86A v12p10.pdf
V12P10HM3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
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V12P12-M3/86A v12p12.pdf
V12P12-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+28.03 грн
3000+25.29 грн
4500+25.26 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
V8P10HM3/86A v8p10.pdf
V8P10HM3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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ZGL41-100-E3/96
ZGL41-100-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
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ZGL41-100A-E3/96 zgl41.pdf
ZGL41-100A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+11.53 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
ZGL41-110-E3/96
ZGL41-110-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
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ZGL41-110A-E3/96 zgl41.pdf
ZGL41-110A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 83.6 V
товару немає в наявності
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ZGL41-120-E3/96
ZGL41-120-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 120V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 380 Ohms
Supplier Device Package: GL41 (DO-213AB)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
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ZGL41-140A-E3/96 zgl41.pdf
ZGL41-140A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 140V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 140 V
Impedance (Max) (Zzt): 525 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 106.4 V
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ZGL41-150-E3/96
ZGL41-150-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
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ZGL41-150A-E3/96 zgl41.pdf
ZGL41-150A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 114 V
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ZGL41-160A-E3/96 zgl41.pdf
ZGL41-160A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
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ZGL41-170-E3/96
ZGL41-170-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 170V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 170 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 129.2 V
товару немає в наявності
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ZGL41-170A-E3/96 zgl41.pdf
ZGL41-170A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 170V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 170 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 129.2 V
товару немає в наявності
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ZGL41-180-E3/96
ZGL41-180-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 136.9 V
товару немає в наявності
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ZGL41-180A-E3/96 zgl41.pdf
ZGL41-180A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 136.9 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+15.32 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
ZGL41-190A-E3/96 zgl41.pdf
ZGL41-190A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 190V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 190 V
Impedance (Max) (Zzt): 1050 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 144.4 V
товару немає в наявності
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ZGL41-200-E3/96
ZGL41-200-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товару немає в наявності
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ZGL41-200A-E3/96 zgl41.pdf
ZGL41-200A-E3/96
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1W GL41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товару немає в наявності
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3N246-E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
3N246-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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3N251-E4/51 KBP005M_thru_10M,%203N246_thru_52.pdf
3N251-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.5A KBPM
товару немає в наявності
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3N256-E4/51 2KBP005M-10M%2C3N253-259.pdf
3N256-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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3N257-E4/51 2KBP005M-10M%2C3N253-259.pdf
3N257-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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3N258-E4/51 2KBP005M-10M,3N253-259.pdf
3N258-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
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3N259-E4/51 2KBP005M-10M%2C3N253-259.pdf
3N259-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KBP005M-E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP005M-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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KBP01M-E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP01M-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 100V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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KBP02M-E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP02M-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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KBP04M-E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP04M-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBP06M-E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP06M-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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KBP08M-E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP08M-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBP10M-E4/51 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP10M-E4/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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2KBP005M-E4/45 2KBP005M-10M%2C3N253-259.pdf
2KBP005M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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2KBP01M-E4/45 2KBP005M-10M,3N253-259.pdf
2KBP01M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 2A KBPM
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2KBP02M-E4/45 2KBP005M-10M%2C3N253-259.pdf
2KBP02M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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2KBP04M-E4/45 2KBP005M-10M%2C3N253-259.pdf
2KBP04M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2KBP06M-E4/45 2KBP005M-10M%2C3N253-259.pdf
2KBP06M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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2KBP08M-E4/45 2KBP005M-10M%2C3N253-259.pdf
2KBP08M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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2KBP10M-E4/45 2KBP005M-10M%2C3N253-259.pdf
2KBP10M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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3KBP02M-E4/45 3KBP005,01,02,04,06,08M.pdf
3KBP02M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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3KBP04M-E4/45 3KBP005,01,02,04,06,08M.pdf
3KBP04M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
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3KBP06M-E4/45 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf
3KBP06M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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3KBP08M-E4/45 3KBP005%2C01%2C02%2C04%2C06%2C08M.pdf
3KBP08M-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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3N251-E4/45 KBP005M_thru_10M,%203N246_thru_52.pdf
3N251-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.5A KBPM
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3N256-E4/45 2KBP005M-10M%2C3N253-259.pdf
3N256-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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3N257-E4/45 2KBP005M-10M,3N253-259.pdf
3N257-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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3N258-E4/45 2KBP005M-10M,3N253-259.pdf
3N258-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
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3N259-E4/45 2KBP005M-10M%2C3N253-259.pdf
3N259-E4/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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B250C800DM-E3/45 800dm.pdf
B250C800DM-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 900MA DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 384 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+62.88 грн
50+27.81 грн
100+24.55 грн
Мінімальне замовлення: 6
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B380C800DM-E3/45 800dm.pdf
B380C800DM-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 900MA DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4860 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.73 грн
10+37.59 грн
100+26.10 грн
500+19.12 грн
1000+15.54 грн
2000+13.89 грн
Мінімальне замовлення: 8
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B40C800DM-E3/45 800dm.pdf
B40C800DM-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 65V 900MA DFM
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Active
Voltage - Peak Reverse (Max): 65 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 65 V
на замовлення 6210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.23 грн
50+31.03 грн
100+27.40 грн
500+19.73 грн
1000+17.80 грн
2000+16.18 грн
5000+14.19 грн
Мінімальне замовлення: 5
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