Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41144) > Сторінка 158 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FES16GTHE3/45 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 400V 16A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES16HT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 500V 16A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Voltage - DC Reverse (Vr) (Max): 500 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 16A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES16HTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 500V 16A TO220AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Voltage - DC Reverse (Vr) (Max): 500 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 16A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES16JT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 16A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 16A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 2484 шт: термін постачання 21-31 дні (днів) |
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FES16JTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 16A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES8AT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FES8ATHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES8BT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 8A TO220AC |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FES8BTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES8CTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES8DT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1437 шт: термін постачання 21-31 дні (днів) |
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FES8DTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES8FT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FES8FTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES8GT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 622 шт: термін постачання 21-31 дні (днів) |
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FES8GTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 8A TO220AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES8HT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 500V 8A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 500 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FES8HTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 500V 8A TO220AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 500 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FES8JT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 8A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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FES8JTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FESB16AT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16ATHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16BT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16BTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16CT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16CTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16DTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16FT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16FTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16GT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16GTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 16A TO263AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESB16JT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 16A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 145pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1121 шт: термін постачання 21-31 дні (днів) |
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FESB8DT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESF16AT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESF16BT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESF16CT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESF16DT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 279 шт: термін постачання 21-31 дні (днів) |
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FESF16FT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 300V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESF16GT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESF16HT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 500V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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FESF16JT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 499 шт: термін постачання 21-31 дні (днів) |
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FESF8DT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
 |
G2SB60-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G2SB80-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
G2SBA20-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G2SBA60-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
G2SBA60L-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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G2SBA80-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
G3SBA20-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G3SBA20L-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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G3SBA60L-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Average Rectified (Io): 2.3 A Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
G3SBA80-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Average Rectified (Io): 2.3 A Voltage - Peak Reverse (Max): 800 V Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
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G5SBA20-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Average Rectified (Io): 2.8 A Voltage - Peak Reverse (Max): 200 V Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Packaging: Tube Mounting Type: Through Hole Package / Case: 4-SIP, GBU |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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G5SBA20L-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
G5SBA60-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Average Rectified (Io): 2.8 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: GBU Technology: Standard |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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G5SBA60L-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Average Rectified (Io): 2.8 A Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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G5SBA80-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU Voltage - Peak Reverse (Max): 800 V Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Average Rectified (Io): 2.8 A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
 |
GBL01-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 3A GBL Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 100 V Supplier Device Package: GBL Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBL Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBL04-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 3A GBL |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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GBL06-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3A GBL Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: GBL Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBL Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| FES16GTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FES16HT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 500V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FES16HTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 16A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 500V 16A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FES16JT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 600V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 2484 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.98 грн |
| 50+ | 40.64 грн |
| 100+ | 40.60 грн |
| 500+ | 36.43 грн |
| 1000+ | 34.87 грн |
| FES16JTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FES8AT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FES8ATHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FES8BT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO220AC
Description: DIODE GEN PURP 100V 8A TO220AC
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.34 грн |
| 10+ | 77.69 грн |
| 100+ | 60.56 грн |
| 500+ | 46.96 грн |
| 1000+ | 38.47 грн |
| FES8BTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO220AC
Description: DIODE GEN PURP 100V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| FES8CTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO220AC
Description: DIODE GEN PURP 150V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| FES8DT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1437 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 79.34 грн |
| 50+ | 61.29 грн |
| 100+ | 48.57 грн |
| 500+ | 38.63 грн |
| 1000+ | 31.47 грн |
| FES8DTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FES8FT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FES8FTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FES8GT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 78.56 грн |
| 10+ | 61.88 грн |
| 100+ | 48.13 грн |
| 500+ | 38.28 грн |
| FES8GTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 400V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FES8HT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FES8HTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 500V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| FES8JT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 600V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.21 грн |
| FES8JTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FESB16AT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Description: DIODE GEN PURP 50V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16ATHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Description: DIODE GEN PURP 50V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16BT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Description: DIODE GEN PURP 100V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16BTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Description: DIODE GEN PURP 100V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16CT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16CTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16DTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Description: DIODE GEN PURP 200V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16FT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Description: DIODE GEN PURP 300V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16FTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Description: DIODE GEN PURP 300V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16GT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Description: DIODE GEN PURP 400V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16GTHE3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Description: DIODE GEN PURP 400V 16A TO263AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESB16JT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1121 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 124.12 грн |
| 10+ | 99.25 грн |
| 100+ | 79.04 грн |
| 500+ | 62.76 грн |
| 1000+ | 53.25 грн |
| FESB8DT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESF16AT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD 50V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESF16BT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESF16CT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESF16DT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 279 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 159.47 грн |
| 50+ | 62.26 грн |
| 100+ | 61.25 грн |
| FESF16FT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE STANDARD 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESF16GT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESF16HT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Description: DIODE STANDARD 500V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FESF16JT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 158.68 грн |
| 50+ | 61.62 грн |
| 100+ | 61.05 грн |
| FESF8DT-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| G2SB60-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| G2SB80-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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В кошику
од. на суму грн.
| G2SBA20-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA60L-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA80-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| G3SBA20-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
товару немає в наявності
В кошику
од. на суму грн.
| G3SBA20L-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
товару немає в наявності
В кошику
од. на суму грн.
| G3SBA60L-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| G3SBA80-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| G5SBA20-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Packaging: Tube
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Packaging: Tube
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| G5SBA20L-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
товару немає в наявності
В кошику
од. на суму грн.
| G5SBA60-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| G5SBA60L-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| G5SBA80-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GBL01-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Description: BRIDGE RECT 1PHASE 100V 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| GBL04-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A GBL
Description: BRIDGE RECT 1PHASE 400V 3A GBL
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| GBL06-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.