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BAS385-TR BAS385-TR Vishay General Semiconductor - Diodes Division bas385.pdf Description: DIODE SCHOTT 30V 200MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2.3 µA @ 25 V
на замовлення 13421 шт:
термін постачання 21-31 дні (днів)
12+26.96 грн
20+15.96 грн
100+10.03 грн
500+6.98 грн
1000+6.20 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
SD103AWS-E3-08 SD103AWS-E3-08 Vishay General Semiconductor - Diodes Division sd103aws_sd103bws_sd103cws.pdf Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
10+34.10 грн
16+20.16 грн
50+14.57 грн
100+11.96 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
S1AHE3_A/I S1AHE3_A/I Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 50V 1A DO214AC
товару немає в наявності
 Мінімальне замовлення: 15000 шт
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S1DHE3_A/H S1DHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
1800+4.50 грн
3600+3.65 грн
Мінімальне замовлення: 1800 шт
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S3AHE3_A/H S3AHE3_A/H Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE GEN PURP 50V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 1700 шт
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S3AHE3_A/I S3AHE3_A/I Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE GEN PURP 50V 3A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3500 шт
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S3MHE3_A/I S3MHE3_A/I Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3500 шт
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S5AHE3_A/H S5AHE3_A/H Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
товару немає в наявності
 Мінімальне замовлення: 1700 шт
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S5AHE3_A/I S5AHE3_A/I Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3500 шт
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S5JHE3_A/I S5JHE3_A/I Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE GEN PURP 600V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3500 шт
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S5MHE3_A/H S5MHE3_A/H Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 1000V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
850+14.57 грн
Мінімальне замовлення: 850 шт
В кошику  од. на суму  грн.
S5MHE3_A/I S5MHE3_A/I Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 1000V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
3500+13.26 грн
7000+12.57 грн
Мінімальне замовлення: 3500 шт
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MPG06AHE3_A/54 MPG06AHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06%28A-M%29.pdf Description: DIODE STANDARD 50V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 22000 шт
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MPG06BHE3_A/54 MPG06BHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 100V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 22000 шт
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MPG06BHE3_A/73 MPG06BHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 100V 1A MPG06
товару немає в наявності
 Мінімальне замовлення: 18000 шт
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MPG06GHE3_A/73 MPG06GHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 400V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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MPG06JHE3_A/73 MPG06JHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 600V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
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MPG06KHE3_A/54 MPG06KHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 800V 1A MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
 Мінімальне замовлення: 22000 шт
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MPG06KHE3_A/73 MPG06KHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 800V 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MPG06MHE3_A/54 MPG06MHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
 Мінімальне замовлення: 22000 шт
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MPG06MHE3_A/73 MPG06MHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RMPG06BHE3_A/54 RMPG06BHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 100V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 16500 шт
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RMPG06DHE3_A/54 RMPG06DHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 200V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 16500 шт
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RMPG06DHE3_A/73 RMPG06DHE3_A/73 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE GEN PURP 200V 1A MPG06
товару немає в наявності
 Мінімальне замовлення: 12000 шт
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RMPG06GHE3_A/54 RMPG06GHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 400V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 16500 шт
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RMPG06GHE3_A/73 RMPG06GHE3_A/73 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 400V 1A MPG06
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RMPG06JHE3_A/73 RMPG06JHE3_A/73 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE GEN PURP 600V 1A MPG06
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RMPG06KHE3_A/54 RMPG06KHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 800V 1A MPG06
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 16500 шт
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P6SMB510AHE3_A/H P6SMB510AHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB510AHE3_A/I P6SMB510AHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MPG06DHE3_A/54 MPG06DHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 200V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 22000 шт
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VS-113CNQ100ASLPBF VS-113CNQ100ASLPBF Vishay General Semiconductor - Diodes Division VS-113CNQ100APbF.pdf Description: DIODE ARR SCHOTT 100V 55A D618SL
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 110 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
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VS-10CTQ150SPBF VS-10CTQ150SPBF Vishay General Semiconductor - Diodes Division VS-10CTQ150%28SPBF%2C-1PBF%29.pdf Description: DIODE ARR SCHOTT 150V 5A TO263AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
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VS-20CTQ150SPBF VS-20CTQ150SPBF Vishay General Semiconductor - Diodes Division VS-20CTQ150SPBF%2C-1PBF.pdf Description: DIODE ARR SCHOT 150V 10A TO263AB
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-20ETF02SPBF VS-20ETF02SPBF Vishay General Semiconductor - Diodes Division VS-20ETF..SPbF_Series.pdf Description: DIODE GEN PURP 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-20ETF12SPBF VS-20ETF12SPBF Vishay General Semiconductor - Diodes Division VS-20ETFxxSPBF.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-30CTH02SPBF VS-30CTH02SPBF Vishay General Semiconductor - Diodes Division VS-30CTH02(SPbF,PbF).pdf Description: DIODE ARRAY GP 200V 15A D2PAK
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VS-40CTQ150SPBF VS-40CTQ150SPBF Vishay General Semiconductor - Diodes Division VS-40CTQ150%28SPBF%2C-1PBF%29.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-82CNQ030ASLPBF VS-82CNQ030ASLPBF Vishay General Semiconductor - Diodes Division VS-82CNQ030APbF.pdf Description: DIODE ARR SCHOTT 30V 40A D618SL
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
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VS-83CNQ100ASLPBF VS-83CNQ100ASLPBF Vishay General Semiconductor - Diodes Division VS-83CNQ080A,100A.pdf Description: DIODE ARR SCHOTT 100V 40A D618SL
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
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VS-MBRB1045PBF VS-MBRB1045PBF Vishay General Semiconductor - Diodes Division VS-MBRB10%2835%2C45%29PbF.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-20CTQ150STRLPBF VS-20CTQ150STRLPBF Vishay General Semiconductor - Diodes Division VS-20CTQ150SPBF%2C-1PBF.pdf Description: DIODE ARR SCHOT 150V 10A TO263AB
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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VS-20ETF10STRRPBF VS-20ETF10STRRPBF Vishay General Semiconductor - Diodes Division vs-20etf08s-m3.pdf Description: DIODE STANDARD 1000V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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VSSA310S-E3/5AT VSSA310S-E3/5AT Vishay General Semiconductor - Diodes Division vssa310s.pdf Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
7500+6.85 грн
15000+6.51 грн
Мінімальне замовлення: 7500 шт
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S1JHE3_A/H S1JHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
на замовлення 57600 шт:
термін постачання 21-31 дні (днів)
1800+6.43 грн
3600+5.21 грн
5400+4.98 грн
9000+4.04 грн
45000+3.97 грн
Мінімальне замовлення: 1800 шт
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SE20AFBHM3/6A SE20AFBHM3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 100V 2A DO221AC
товару немає в наявності
 Мінімальне замовлення: 14000 шт
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SE20AFJHM3/6A SE20AFJHM3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 600V 2A DO221AC
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 3500 шт
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SE30AFBHM3/6A SE30AFBHM3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE GEN PURP 100V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
3500+9.52 грн
7000+8.46 грн
10500+8.10 грн
Мінімальне замовлення: 3500 шт
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SE30AFJHM3/6A SE30AFJHM3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE STANDARD 600V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 66500 шт:
термін постачання 21-31 дні (днів)
3500+7.53 грн
7000+6.86 грн
Мінімальне замовлення: 3500 шт
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V10PL45-M3/86A V10PL45-M3/86A Vishay General Semiconductor - Diodes Division v10pl45-m3.pdf Description: DIODE SCHOTTKY 45V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
1500+29.83 грн
Мінімальне замовлення: 1500 шт
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V15P45S-M3/86A V15P45S-M3/86A Vishay General Semiconductor - Diodes Division v15p45s-m3.pdf Description: DIODE ARRAY SCHOT 45V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+31.76 грн
Мінімальне замовлення: 1500 шт
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VSSA210-E3/61T VSSA210-E3/61T Vishay General Semiconductor - Diodes Division vssa210.pdf Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
1800+7.06 грн
3600+6.51 грн
Мінімальне замовлення: 1800 шт
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VSSB310-E3/52T VSSB310-E3/52T Vishay General Semiconductor - Diodes Division vssb310-e3.pdf Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)
750+16.24 грн
2250+13.35 грн
Мінімальне замовлення: 750 шт
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VSSB410S-E3/52T VSSB410S-E3/52T Vishay General Semiconductor - Diodes Division vssb410s-e3.pdf Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
750+8.65 грн
1500+8.24 грн
Мінімальне замовлення: 750 шт
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VSSA310S-E3/5AT VSSA310S-E3/5AT Vishay General Semiconductor - Diodes Division vssa310s.pdf Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 27610 шт:
термін постачання 21-31 дні (днів)
19+17.44 грн
22+14.13 грн
100+11.49 грн
500+9.95 грн
2000+8.97 грн
Мінімальне замовлення: 19 шт
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S1JHE3_A/H S1JHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 61739 шт:
термін постачання 21-31 дні (днів)
11+30.13 грн
16+20.23 грн
100+10.23 грн
500+7.83 грн
Мінімальне замовлення: 11 шт
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SE20AFBHM3/6A SE20AFBHM3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 100V 2A DO221AC
на замовлення 1753 шт:
термін постачання 21-31 дні (днів)
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SE20AFJHM3/6A SE20AFJHM3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 600V 2A DO221AC
на замовлення 5342 шт:
термін постачання 21-31 дні (днів)
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SE30AFBHM3/6A SE30AFBHM3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE GEN PURP 100V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
на замовлення 18440 шт:
термін постачання 21-31 дні (днів)
15+21.41 грн
23+13.44 грн
100+12.54 грн
500+10.15 грн
1000+9.31 грн
Мінімальне замовлення: 15 шт
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SE30AFJHM3/6A SE30AFJHM3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE STANDARD 600V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
на замовлення 68570 шт:
термін постачання 21-31 дні (днів)
19+17.44 грн
28+11.00 грн
100+8.46 грн
500+7.35 грн
1000+7.26 грн
Мінімальне замовлення: 19 шт
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BAS385-TR bas385.pdf
BAS385-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 30V 200MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2.3 µA @ 25 V
на замовлення 13421 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
12+26.96 грн
20+15.96 грн
100+10.03 грн
500+6.98 грн
1000+6.20 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
SD103AWS-E3-08 sd103aws_sd103bws_sd103cws.pdf
SD103AWS-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+34.10 грн
16+20.16 грн
50+14.57 грн
100+11.96 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
S1AHE3_A/I s1.pdf
S1AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
S1DHE3_A/H s1.pdf
S1DHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1800+4.50 грн
3600+3.65 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
S3AHE3_A/H s3a.pdf
S3AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 1700 шт
В кошику  од. на суму  грн.
S3AHE3_A/I s3a.pdf
S3AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
S3MHE3_A/I s3a.pdf
S3MHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3500 шт
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S5AHE3_A/H s5a.pdf
S5AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
товару немає в наявності
Мінімальне замовлення: 1700 шт
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S5AHE3_A/I s5a.pdf
S5AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
S5JHE3_A/I s5a.pdf
S5JHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
S5MHE3_A/H s5a.pdf
S5MHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
850+14.57 грн
Мінімальне замовлення: 850 шт
В кошику  од. на суму  грн.
S5MHE3_A/I s5a.pdf
S5MHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3500+13.26 грн
7000+12.57 грн
Мінімальне замовлення: 3500 шт
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MPG06AHE3_A/54 MPG06%28A-M%29.pdf
MPG06AHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 22000 шт
В кошику  од. на суму  грн.
MPG06BHE3_A/54 MPG06(A-M).pdf
MPG06BHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 22000 шт
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MPG06BHE3_A/73 MPG06(A-M).pdf
MPG06BHE3_A/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A MPG06
товару немає в наявності
Мінімальне замовлення: 18000 шт
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MPG06GHE3_A/73 MPG06(A-M).pdf
MPG06GHE3_A/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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MPG06JHE3_A/73 MPG06(A-M).pdf
MPG06JHE3_A/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
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MPG06KHE3_A/54 MPG06(A-M).pdf
MPG06KHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 22000 шт
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MPG06KHE3_A/73 MPG06(A-M).pdf
MPG06KHE3_A/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MPG06MHE3_A/54 MPG06(A-M).pdf
MPG06MHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 22000 шт
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MPG06MHE3_A/73 MPG06(A-M).pdf
MPG06MHE3_A/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RMPG06BHE3_A/54 rmpg06.pdf
RMPG06BHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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RMPG06DHE3_A/54 rmpg06.pdf
RMPG06DHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 16500 шт
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RMPG06DHE3_A/73 rmpg06.pdf
RMPG06DHE3_A/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A MPG06
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Мінімальне замовлення: 12000 шт
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RMPG06GHE3_A/54 rmpg06.pdf
RMPG06GHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 16500 шт
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RMPG06GHE3_A/73 rmpg06.pdf
RMPG06GHE3_A/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A MPG06
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RMPG06JHE3_A/73 rmpg06.pdf
RMPG06JHE3_A/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MPG06
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RMPG06KHE3_A/54 rmpg06.pdf
RMPG06KHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A MPG06
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 16500 шт
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P6SMB510AHE3_A/H p6smb.pdf
P6SMB510AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB510AHE3_A/I p6smb.pdf
P6SMB510AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MPG06DHE3_A/54 MPG06(A-M).pdf
MPG06DHE3_A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 22000 шт
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VS-113CNQ100ASLPBF VS-113CNQ100APbF.pdf
VS-113CNQ100ASLPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 55A D618SL
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 110 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
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VS-10CTQ150SPBF VS-10CTQ150%28SPBF%2C-1PBF%29.pdf
VS-10CTQ150SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
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VS-20CTQ150SPBF VS-20CTQ150SPBF%2C-1PBF.pdf
VS-20CTQ150SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 10A TO263AB
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-20ETF02SPBF VS-20ETF..SPbF_Series.pdf
VS-20ETF02SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-20ETF12SPBF VS-20ETFxxSPBF.pdf
VS-20ETF12SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-30CTH02SPBF VS-30CTH02(SPbF,PbF).pdf
VS-30CTH02SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 15A D2PAK
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VS-40CTQ150SPBF VS-40CTQ150%28SPBF%2C-1PBF%29.pdf
VS-40CTQ150SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 20A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-82CNQ030ASLPBF VS-82CNQ030APbF.pdf
VS-82CNQ030ASLPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 40A D618SL
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
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VS-83CNQ100ASLPBF VS-83CNQ080A,100A.pdf
VS-83CNQ100ASLPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 40A D618SL
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
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VS-MBRB1045PBF VS-MBRB10%2835%2C45%29PbF.pdf
VS-MBRB1045PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VS-20CTQ150STRLPBF VS-20CTQ150SPBF%2C-1PBF.pdf
VS-20CTQ150STRLPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 10A TO263AB
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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VS-20ETF10STRRPBF vs-20etf08s-m3.pdf
VS-20ETF10STRRPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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VSSA310S-E3/5AT vssa310s.pdf
VSSA310S-E3/5AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7500+6.85 грн
15000+6.51 грн
Мінімальне замовлення: 7500 шт
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S1JHE3_A/H s1.pdf
S1JHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
на замовлення 57600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1800+6.43 грн
3600+5.21 грн
5400+4.98 грн
9000+4.04 грн
45000+3.97 грн
Мінімальне замовлення: 1800 шт
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SE20AFBHM3/6A se20afb.pdf
SE20AFBHM3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO221AC
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Мінімальне замовлення: 14000 шт
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SE20AFJHM3/6A se20afb.pdf
SE20AFJHM3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 3500 шт
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SE30AFBHM3/6A se30afb.pdf
SE30AFBHM3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3500+9.52 грн
7000+8.46 грн
10500+8.10 грн
Мінімальне замовлення: 3500 шт
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SE30AFJHM3/6A se30afb.pdf
SE30AFJHM3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 66500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3500+7.53 грн
7000+6.86 грн
Мінімальне замовлення: 3500 шт
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V10PL45-M3/86A v10pl45-m3.pdf
V10PL45-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+29.83 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
V15P45S-M3/86A v15p45s-m3.pdf
V15P45S-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 45V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+31.76 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
VSSA210-E3/61T vssa210.pdf
VSSA210-E3/61T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1800+7.06 грн
3600+6.51 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
VSSB310-E3/52T vssb310-e3.pdf
VSSB310-E3/52T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
750+16.24 грн
2250+13.35 грн
Мінімальне замовлення: 750 шт
В кошику  од. на суму  грн.
VSSB410S-E3/52T vssb410s-e3.pdf
VSSB410S-E3/52T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
750+8.65 грн
1500+8.24 грн
Мінімальне замовлення: 750 шт
В кошику  од. на суму  грн.
VSSA310S-E3/5AT vssa310s.pdf
VSSA310S-E3/5AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 27610 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
19+17.44 грн
22+14.13 грн
100+11.49 грн
500+9.95 грн
2000+8.97 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
S1JHE3_A/H s1.pdf
S1JHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 61739 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
11+30.13 грн
16+20.23 грн
100+10.23 грн
500+7.83 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
SE20AFBHM3/6A se20afb.pdf
SE20AFBHM3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO221AC
на замовлення 1753 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SE20AFJHM3/6A se20afb.pdf
SE20AFJHM3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
на замовлення 5342 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SE30AFBHM3/6A se30afb.pdf
SE30AFBHM3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
на замовлення 18440 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
15+21.41 грн
23+13.44 грн
100+12.54 грн
500+10.15 грн
1000+9.31 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
SE30AFJHM3/6A se30afb.pdf
SE30AFJHM3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
на замовлення 68570 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
19+17.44 грн
28+11.00 грн
100+8.46 грн
500+7.35 грн
1000+7.26 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
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