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1N5241C-TAP 1N5241C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 11V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5242B-TAP 1N5242B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5242C-TAP 1N5242C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5243C-TAP 1N5243C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 13V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5244C-TAP 1N5244C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 14V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5245B-TAP 1N5245B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+1.61 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5245C-TAP 1N5245C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5246B-TAP 1N5246B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+1.84 грн
20000+1.73 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5246C-TAP 1N5246C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 16V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5247B-TAP 1N5247B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 17V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5247C-TAP 1N5247C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 17V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5248B-TAP 1N5248B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
10000+1.86 грн
20000+1.61 грн
30000+1.48 грн
50000+1.36 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5248C-TAP 1N5248C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5249B-TAP 1N5249B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 19V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5249C-TAP 1N5249C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 19V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5250B-TAP 1N5250B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 20V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+1.68 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5250C-TAP 1N5250C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 20V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5252B-TAP 1N5252B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5252C-TAP 1N5252C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5254B-TAP 1N5254B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 27V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+1.84 грн
20000+1.73 грн
30000+1.70 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5254C-TAP 1N5254C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 27V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5255C-TAP 1N5255C-TAP Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 28V 500MW DO35
товару немає в наявності
В кошику  од. на суму  грн.
1N5256B-TAP 1N5256B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
10000+1.60 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5256C-TAP 1N5256C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 30V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5257C-TAP 1N5257C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 33V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товару немає в наявності
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1N5258B-TAP 1N5258B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 36V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
10000+2.43 грн
20000+2.11 грн
30000+2.00 грн
50000+1.75 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5258C-TAP 1N5258C-TAP Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 36V 500MW DO35
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1N5259B-TAP 1N5259B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 39V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5259C-TAP 1N5259C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 39V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
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1N5260C-TAP 1N5260C-TAP Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 43V 500MW DO35
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1N5261C-TAP 1N5261C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 47V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Qualification: AEC-Q101
товару немає в наявності
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1N5267B-TAP 1N5267B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 75V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
товару немає в наявності
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1N5267C-TAP 1N5267C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 75V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
товару немає в наявності
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1N5407GP-E3/73 1N5407GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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1N5417-TAP 1N5417-TAP Vishay General Semiconductor - Diodes Division 1n5417.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
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1N5418-TAP 1N5418-TAP Vishay General Semiconductor - Diodes Division 1n5417.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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В кошику  од. на суму  грн.
1N5619GP-E3/73 1N5619GP-E3/73 Vishay General Semiconductor - Diodes Division 1n5615gp.pdf Description: DIODE GEN PURP 600V 1A DO201AD
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В кошику  од. на суму  грн.
1N5625-TAP 1N5625-TAP Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+29.18 грн
5000+26.76 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1N5626-TAP 1N5626-TAP Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)
2500+27.53 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1N5627GP-E3/73 1N5627GP-E3/73 Vishay General Semiconductor - Diodes Division 1N5624-27.pdf Description: DIODE GEN PURP 800V 3A DO201AD
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1N914TAP 1N914TAP Vishay General Semiconductor - Diodes Division 1n914.pdf Description: DIODE STD 100V 300MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+1.48 грн
20000+1.38 грн
30000+1.33 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
31GF6-M3/73 31GF6-M3/73 Vishay General Semiconductor - Diodes Division 31gf6.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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BA158-E3/53 BA158-E3/53 Vishay General Semiconductor - Diodes Division ba157.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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В кошику  од. на суму  грн.
BA159GPE-E3/53 BA159GPE-E3/53 Vishay General Semiconductor - Diodes Division ba157gp.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BA159GPEHE3/53 BA159GPEHE3/53 Vishay General Semiconductor - Diodes Division ba157gp.pdf Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
BA282-TAP BA282-TAP Vishay General Semiconductor - Diodes Division bas281.pdf Description: RF DIODE STANDARD 35V DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Diode Type: Standard - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.25pF @ 3V, 100MHz
Resistance @ If, F: 500mOhm @ 10mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Obsolete
Current - Max: 100 mA
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В кошику  од. на суму  грн.
BA283-TAP BA283-TAP Vishay General Semiconductor - Diodes Division bas281.pdf Description: RF DIODE STANDARD 35V DO35
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BA479G-TAP BA479G-TAP Vishay General Semiconductor - Diodes Division ba479g.pdf Description: RF DIODE PIN 30V DO-204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: DO-204AH (DO-35)
Current - Max: 50 mA
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BA479S-TAP BA479S-TAP Vishay General Semiconductor - Diodes Division ba479g.pdf Description: RF DIODE PIN 30V DO-204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: DO-204AH (DO-35)
Current - Max: 50 mA
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BAT82S-TAP BAT82S-TAP Vishay General Semiconductor - Diodes Division bat81s82s.pdf Description: DIODE SCHOTTKY 50V 30MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
BAT83S-TAP BAT83S-TAP Vishay General Semiconductor - Diodes Division bat81s82s.pdf Description: DIODE SCHOTTKY 60V 30MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
BAV17-TAP BAV17-TAP Vishay General Semiconductor - Diodes Division bav17.pdf Description: DIODE GEN PURP 20V 250MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
BAV20-TAP BAV20-TAP Vishay General Semiconductor - Diodes Division bav17.pdf Description: DIODE STD 150V 250MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
10000+2.15 грн
20000+1.91 грн
30000+1.86 грн
50000+1.73 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAV21-TAP BAV21-TAP Vishay General Semiconductor - Diodes Division bav17.pdf Description: DIODE STD 200V 250MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
10000+1.63 грн
20000+1.55 грн
30000+1.54 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAW27-TAP BAW27-TAP Vishay General Semiconductor - Diodes Division baw27.pdf Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+2.68 грн
20000+2.33 грн
30000+2.21 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAW76-TAP BAW76-TAP Vishay General Semiconductor - Diodes Division baw76.pdf Description: DIODE STANDARD 50V 300MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
10000+1.71 грн
20000+1.59 грн
30000+1.57 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAY135-TAP BAY135-TAP Vishay General Semiconductor - Diodes Division bay135.pdf Description: DIODE GEN PURP 125V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 3 nA @ 60 V
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BY203-12STAP BY203-12STAP Vishay General Semiconductor - Diodes Division by20312s.pdf Description: DIODE AVAL 1.2KV 250MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 700 V
товару немає в наявності
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BY203-16STAP BY203-16STAP Vishay General Semiconductor - Diodes Division by20312s.pdf Description: DIODE AVAL 1.6KV 250MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
BY203-20STAP BY203-20STAP Vishay General Semiconductor - Diodes Division by20312s.pdf Description: DIODE AVALANCHE 2KV 250MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+22.52 грн
10000+20.18 грн
15000+19.69 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
1N5241C-TAP 1n5221.pdf
1N5241C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Qualification: AEC-Q101
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1N5242B-TAP 1n5221.pdf
1N5242B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5242C-TAP 1n5221.pdf
1N5242C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5243C-TAP 1n5221.pdf
1N5243C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5244C-TAP 1n5221.pdf
1N5244C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5245B-TAP 1n5221.pdf
1N5245B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.61 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5245C-TAP 1n5221.pdf
1N5245C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5246B-TAP 1n5221.pdf
1N5246B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.84 грн
20000+1.73 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5246C-TAP 1n5221.pdf
1N5246C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5247B-TAP 1n5221.pdf
1N5247B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5247C-TAP 1n5221.pdf
1N5247C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5248B-TAP 1n5221.pdf
1N5248B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.86 грн
20000+1.61 грн
30000+1.48 грн
50000+1.36 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5248C-TAP 1n5221.pdf
1N5248C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5249B-TAP 1n5221.pdf
1N5249B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5249C-TAP 1n5221.pdf
1N5249C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5250B-TAP 1n5221.pdf
1N5250B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.68 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5250C-TAP 1n5221.pdf
1N5250C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5252B-TAP 1n5221.pdf
1N5252B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5252C-TAP 1n5221.pdf
1N5252C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5254B-TAP 1n5221.pdf
1N5254B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.84 грн
20000+1.73 грн
30000+1.70 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5254C-TAP 1n5221.pdf
1N5254C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5255C-TAP
1N5255C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW DO35
товару немає в наявності
В кошику  од. на суму  грн.
1N5256B-TAP 1n5221.pdf
1N5256B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.60 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5256C-TAP 1n5221.pdf
1N5256C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5257C-TAP 1n5221.pdf
1N5257C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5258B-TAP 1n5221.pdf
1N5258B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.43 грн
20000+2.11 грн
30000+2.00 грн
50000+1.75 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
1N5258C-TAP
1N5258C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO35
товару немає в наявності
В кошику  од. на суму  грн.
1N5259B-TAP 1n5221.pdf
1N5259B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5259C-TAP 1n5221.pdf
1N5259C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5260C-TAP
1N5260C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW DO35
товару немає в наявності
В кошику  од. на суму  грн.
1N5261C-TAP 1n5221.pdf
1N5261C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N5267B-TAP 1n5221.pdf
1N5267B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
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1N5267C-TAP 1n5221.pdf
1N5267C-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
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1N5407GP-E3/73 1n4001gp.pdf
1N5407GP-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N5417-TAP 1n5417.pdf
1N5417-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N5418-TAP 1n5417.pdf
1N5418-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1N5619GP-E3/73 1n5615gp.pdf
1N5619GP-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO201AD
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1N5625-TAP 1n5624.pdf
1N5625-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+29.18 грн
5000+26.76 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1N5626-TAP 1n5624.pdf
1N5626-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+27.53 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
1N5627GP-E3/73 1N5624-27.pdf
1N5627GP-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
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1N914TAP 1n914.pdf
1N914TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 300MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.48 грн
20000+1.38 грн
30000+1.33 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
31GF6-M3/73 31gf6.pdf
31GF6-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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BA158-E3/53 ba157.pdf
BA158-E3/53
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BA159GPE-E3/53 ba157gp.pdf
BA159GPE-E3/53
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BA159GPEHE3/53 ba157gp.pdf
BA159GPEHE3/53
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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BA282-TAP bas281.pdf
BA282-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: RF DIODE STANDARD 35V DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Diode Type: Standard - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.25pF @ 3V, 100MHz
Resistance @ If, F: 500mOhm @ 10mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Obsolete
Current - Max: 100 mA
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BA283-TAP bas281.pdf
BA283-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: RF DIODE STANDARD 35V DO35
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BA479G-TAP ba479g.pdf
BA479G-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: RF DIODE PIN 30V DO-204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: DO-204AH (DO-35)
Current - Max: 50 mA
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BA479S-TAP ba479g.pdf
BA479S-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: RF DIODE PIN 30V DO-204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: DO-204AH (DO-35)
Current - Max: 50 mA
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BAT82S-TAP bat81s82s.pdf
BAT82S-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: AEC-Q101
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BAT83S-TAP bat81s82s.pdf
BAT83S-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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BAV17-TAP bav17.pdf
BAV17-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 20V 250MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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BAV20-TAP bav17.pdf
BAV20-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 150V 250MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.15 грн
20000+1.91 грн
30000+1.86 грн
50000+1.73 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAV21-TAP bav17.pdf
BAV21-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 250MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.63 грн
20000+1.55 грн
30000+1.54 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAW27-TAP baw27.pdf
BAW27-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.68 грн
20000+2.33 грн
30000+2.21 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAW76-TAP baw76.pdf
BAW76-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 300MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.71 грн
20000+1.59 грн
30000+1.57 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BAY135-TAP bay135.pdf
BAY135-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 125V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 3 nA @ 60 V
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BY203-12STAP by20312s.pdf
BY203-12STAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.2KV 250MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 700 V
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BY203-16STAP by20312s.pdf
BY203-16STAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 250MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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BY203-20STAP by20312s.pdf
BY203-20STAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 2KV 250MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+22.52 грн
10000+20.18 грн
15000+19.69 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
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