Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40147) > Сторінка 219 з 670
| Фото | Назва | Виробник | Інформація |
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BYV28-150-TAP | Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 150V 3.5A SOD64Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BYV37-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYV38-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BYV98-100-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 4A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYV98-150-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 150V 4A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYV98-200-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 4A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYV98-50-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 4A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW172D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW172F-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 300V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW172G-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW178-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW32-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BYW33-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 300V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW34-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW35-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 500V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW36-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW52-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW54-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW55-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BYW56-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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BYW73-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 300V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW74TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW75TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 500V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW76TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BYW82-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW84-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW85-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYW86TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYX85TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BYX86TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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BZT03C100-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 100V 1.3W SOD57 Packaging: Tape & Box (TB) Tolerance: ±6% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C10-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 1.3W SOD57 Packaging: Tape & Box (TB) Tolerance: ±6% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C11-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 9.1VWM 15.7VC SOD57 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C120-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 120V 1.3W SOD57 Packaging: Tape & Box (TB) Tolerance: ±5.42% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 120 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 91 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C12-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 1.3W SOD57 Packaging: Tape & Box (TB) Tolerance: ±5.42% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C130-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 110VWM 185VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±6.54% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 130 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C150-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 150V 1.3W SOD57 Packaging: Tape & Box (TB) Tolerance: ±6% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 300 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 110 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZT03C15-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 1.3W SOD57 Packaging: Tape & Box (TB) Tolerance: ±6% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BZT03C160-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 130VWM 224VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±5.63% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 120 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C16-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 13VWM 22.9VC SOD57 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C180-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 150VWM 249VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±6.39% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 400 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 130 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C18-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 25.6VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±6.39% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C200-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 160VWM 276VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±6% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 500 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BZT03C20-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 16VWM 28.4VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±6% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C220-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 180VWM 305VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±5.68% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 220 V Impedance (Max) (Zzt): 750 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 160 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C22-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 18VWM 31VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±5.68% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C24-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 33.8VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±5.83% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 18 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C47-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 47V 1.3W SOD57 Packaging: Tape & Box (TB) Tolerance: ±6.38% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C56-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 47VWM 78.6VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±7.14% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 56 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 43 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C82-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 68VWM 114VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±6.1% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 62 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03C91-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 75VWM 126VC SOD57 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03D150-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 116VWM 213VC SOD57 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03D200-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 158VWM 284VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±6% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 500 Ohms Supplier Device Package: SOD-57 Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03D24-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 19.4VWM 34.6VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±5.83% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Part Status: Obsolete Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 18 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZT03D33-TAP | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 25.8VWM 47.5VC SOD57 Packaging: Tape & Box (TB) Tolerance: ±6.06% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Part Status: Obsolete Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 24 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
BZW03C100-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 100V 1.85W SOD64 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: SOD-64, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-64 Power - Max: 1.85 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW03C10-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 1.85W SOD64 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: SOD-64, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: SOD-64 Power - Max: 1.85 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 7.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
BZW03C110-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 110V 1.85W SOD64 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW03C11-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 11V 1.85W SOD64 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: SOD-64, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: SOD-64 Power - Max: 1.85 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 15 µA @ 8.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BZW03C120-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 120V 1.85W SOD64 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: SOD-64, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 120 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOD-64 Part Status: Obsolete Power - Max: 1.85 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 91 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BYV28-150-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 38.93 грн |
| 5000+ | 35.70 грн |
| BYV37-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Description: DIODE AVALANCHE 800V 2A SOD57
товару немає в наявності
В кошику
од. на суму грн.
| BYV38-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 16.73 грн |
| 10000+ | 14.92 грн |
| BYV98-100-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE AVALANCHE 100V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| BYV98-150-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE AVALANCHE 150V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| BYV98-200-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| BYV98-50-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE AVALANCHE 50V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW172D-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW172F-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW172G-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW178-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW32-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 14.88 грн |
| BYW33-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE AVALANCHE 300V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW34-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW35-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 500V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Description: DIODE AVALANCHE 500V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW36-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW52-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW54-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW55-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 15.39 грн |
| BYW56-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 17.27 грн |
| 10000+ | 15.37 грн |
| BYW73-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW74TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW75TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 500V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Description: DIODE AVALANCHE 500V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW76TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 32.39 грн |
| BYW82-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW84-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BYW85-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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В кошику
од. на суму грн.
| BYW86TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| BYX85TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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В кошику
од. на суму грн.
| BYX86TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 17.33 грн |
| 10000+ | 15.45 грн |
| 25000+ | 15.30 грн |
| BZT03C100-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE ZENER 100V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C10-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
Description: DIODE ZENER 10V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C11-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.1VWM 15.7VC SOD57
Description: TVS DIODE 9.1VWM 15.7VC SOD57
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В кошику
од. на суму грн.
| BZT03C120-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 120V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 91 V
Description: DIODE ZENER 120V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 91 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C12-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Description: DIODE ZENER 12V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C130-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 185VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.54%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: TVS DIODE 110VWM 185VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.54%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C150-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Description: DIODE ZENER 150V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 15.23 грн |
| BZT03C15-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 15V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 17.90 грн |
| BZT03C160-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 130VWM 224VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.63%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Description: TVS DIODE 130VWM 224VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.63%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C16-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 22.9VC SOD57
Description: TVS DIODE 13VWM 22.9VC SOD57
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В кошику
од. на суму грн.
| BZT03C180-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 249VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Description: TVS DIODE 150VWM 249VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C18-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 25.6VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Description: TVS DIODE 15VWM 25.6VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C200-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 276VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: TVS DIODE 160VWM 276VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 15.12 грн |
| BZT03C20-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 28.4VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Description: TVS DIODE 16VWM 28.4VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C220-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 180VWM 305VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.68%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 160 V
Description: TVS DIODE 180VWM 305VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.68%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 160 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C22-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 31VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.68%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Description: TVS DIODE 18VWM 31VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.68%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C24-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 33.8VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.83%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Description: TVS DIODE 20VWM 33.8VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.83%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT03C47-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.38%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Description: DIODE ZENER 47V 1.3W SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.38%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
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| BZT03C56-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 47VWM 78.6VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±7.14%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Description: TVS DIODE 47VWM 78.6VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±7.14%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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| BZT03C82-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 68VWM 114VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.1%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
Description: TVS DIODE 68VWM 114VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.1%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
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| BZT03C91-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 126VC SOD57
Description: TVS DIODE 75VWM 126VC SOD57
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| BZT03D150-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 116VWM 213VC SOD57
Description: TVS DIODE 116VWM 213VC SOD57
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| BZT03D200-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 158VWM 284VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: TVS DIODE 158VWM 284VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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| BZT03D24-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 19.4VWM 34.6VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.83%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Obsolete
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Description: TVS DIODE 19.4VWM 34.6VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.83%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Obsolete
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
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| BZT03D33-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.8VWM 47.5VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.06%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Obsolete
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Description: TVS DIODE 25.8VWM 47.5VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.06%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Obsolete
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
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| BZW03C100-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1.85W SOD64
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-64
Power - Max: 1.85 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
Description: DIODE ZENER 100V 1.85W SOD64
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-64
Power - Max: 1.85 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
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| BZW03C10-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.85W SOD64
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-64
Power - Max: 1.85 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 7.5 V
Description: DIODE ZENER 10V 1.85W SOD64
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-64
Power - Max: 1.85 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 7.5 V
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| BZW03C110-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 1.85W SOD64
Description: DIODE ZENER 110V 1.85W SOD64
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| BZW03C11-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 1.85W SOD64
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: SOD-64
Power - Max: 1.85 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 8.2 V
Description: DIODE ZENER 11V 1.85W SOD64
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: SOD-64
Power - Max: 1.85 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 8.2 V
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| BZW03C120-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 120V 1.85W SOD64
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-64
Part Status: Obsolete
Power - Max: 1.85 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 91 V
Description: DIODE ZENER 120V 1.85W SOD64
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-64
Part Status: Obsolete
Power - Max: 1.85 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 91 V
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од. на суму грн.