Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41144) > Сторінка 219 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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1N5245C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 500MW DO204AHSupplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 100 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5246B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW DO204AHPackaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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1N5246C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW DO204AHCurrent - Reverse Leakage @ Vr: 100 nA @ 12 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 17 Ohms Voltage - Zener (Nom) (Vz): 16 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5247B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 17V 500MW DO35Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 19 Ohms Voltage - Zener (Nom) (Vz): 17 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5247C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 17V 500MW DO35Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 19 Ohms Voltage - Zener (Nom) (Vz): 17 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5248B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW DO204AHPackaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 21 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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1N5248C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW DO204AHPackaging: Tape & Box (TB) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 21 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5249B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 19V 500MW DO35Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 19 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5249C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 19V 500MW DO35Current - Reverse Leakage @ Vr: 100 nA @ 14 V Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 19 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5250B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 20V 500MW DO204AHCurrent - Reverse Leakage @ Vr: 100 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 25 Ohms Voltage - Zener (Nom) (Vz): 20 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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1N5250C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 20V 500MW DO204AHQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 25 Ohms Voltage - Zener (Nom) (Vz): 20 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5252B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO204AHCurrent - Reverse Leakage @ Vr: 100 nA @ 18 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 33 Ohms Voltage - Zener (Nom) (Vz): 24 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||
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1N5252C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO204AHCurrent - Reverse Leakage @ Vr: 100 nA @ 18 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 33 Ohms Voltage - Zener (Nom) (Vz): 24 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5254B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 500MW DO204AHPackaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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1N5254C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 500MW DO35Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 21 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 41 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5255C-TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 28V 500MW DO35 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5256B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO204AHQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 23 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 49 Ohms Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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1N5256C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW DO35Tolerance: ±2% Packaging: Tape & Box (TB) Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 49 Ohms Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 23 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5257C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 500MW DO35Current - Reverse Leakage @ Vr: 100 nA @ 25 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 58 Ohms Voltage - Zener (Nom) (Vz): 33 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5258B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 500MW DO204AHQualification: AEC-Q101 Grade: Automotive Tolerance: ±5% Current - Reverse Leakage @ Vr: 100 nA @ 27 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 70 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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1N5258C-TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 36V 500MW DO35 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5259B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 500MW DO35Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 39 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5259C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 500MW DO35Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 39 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5260C-TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 43V 500MW DO35 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5261C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 47V 500MW DO204AHPackaging: Tape & Box (TB) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 105 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 36 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5267B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 75V 500MW DO35Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 56 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 270 Ohms Voltage - Zener (Nom) (Vz): 75 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5267C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 75V 500MW DO35Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 56 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 270 Ohms Voltage - Zener (Nom) (Vz): 75 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||
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1N5407GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 3A DO201ADPackaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||
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1N5417-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Technology: Avalanche Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||
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1N5418-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Technology: Avalanche Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||
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1N5619GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N5625-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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1N5626-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 7.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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1N5627GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 3A DO201AD |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||
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1N914TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 100V 300MA DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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31GF6-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO201ADCurrent - Reverse Leakage @ Vr: 20 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BA158-E3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204ALCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BA159GPE-E3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204ALCurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BA159GPEHE3/53 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO204ALQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BA282-TAP | Vishay General Semiconductor - Diodes Division |
Description: RF DIODE STANDARD 35V DO35Current - Max: 100 mA Part Status: Obsolete Supplier Device Package: DO-35 (DO-204AH) Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 500mOhm @ 10mA, 200MHz Capacitance @ Vr, F: 1.25pF @ 3V, 100MHz Operating Temperature: 125°C (TJ) Diode Type: Standard - Single Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BA283-TAP | Vishay General Semiconductor - Diodes Division |
Description: RF DIODE STANDARD 35V DO35 |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | ||||||
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BA479G-TAP | Vishay General Semiconductor - Diodes Division |
Description: RF DIODE PIN 30V DO-204AHCurrent - Max: 50 mA Supplier Device Package: DO-204AH (DO-35) Voltage - Peak Reverse (Max): 30V Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | ||||||
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BA479S-TAP | Vishay General Semiconductor - Diodes Division |
Description: RF DIODE PIN 30V DO-204AHCurrent - Max: 50 mA Supplier Device Package: DO-204AH (DO-35) Voltage - Peak Reverse (Max): 30V Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | ||||||
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BAT82S-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 30MA DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | ||||||
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BAT83S-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 30MA DO204AHQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 200 nA @ 60 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: DO-204AH (DO-35) Current - Average Rectified (Io): 30mA Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | ||||||
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BAV17-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 20V 250MA DO35Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-204AH (DO-35) Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | ||||||
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BAV20-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 150V 250MA DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BAV21-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 200V 250MA DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BAW27-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 60V 600MA DO35Packaging: Tape & Box (TB) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 60 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-204AH (DO-35) Current - Average Rectified (Io): 600mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BAW76-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 300MA DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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BAY135-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 125V 200MA DO35Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 3 nA @ 60 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Voltage - DC Reverse (Vr) (Max): 125 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-204AH (DO-35) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | ||||||
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BY203-12STAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 1.2KV 250MA SOD57Current - Reverse Leakage @ Vr: 2 µA @ 700 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 250mA Technology: Avalanche Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||
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BY203-16STAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 1600V 250MA SOD57Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||
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BY203-20STAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 2000V 250MA SOD57Current - Reverse Leakage @ Vr: 2 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 2000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 250mA Technology: Avalanche Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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BY228-13TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 3A SOD64Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||
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BY228-15TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1200V 3A SOD64Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BY228GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 1500V 2.5A DO201ADPackaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||
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BY228TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1500V 3A SOD64Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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BY251P-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO201ADVoltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3 µs Speed: Standard Recovery > 500ns, > 2A (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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BY268TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1400V 800MA SOD57Current - Reverse Leakage @ Vr: 2 µA @ 1400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Voltage - DC Reverse (Vr) (Max): 1400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 800mA Technology: Standard Reverse Recovery Time (trr): 400 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. |
| 1N5245C-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO204AH
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Description: DIODE ZENER 15V 500MW DO204AH
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5246B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.12 грн |
| 20000+ | 5.41 грн |
| 1N5246C-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 16V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5247B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 17V 500MW DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5247C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 17V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5248B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.04 грн |
| 20000+ | 5.35 грн |
| 30000+ | 5.10 грн |
| 1N5248C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5249B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 19 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 19V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 19 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5249C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 19 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Description: DIODE ZENER 19V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 19 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5250B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 20V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 1.48 грн |
| 1N5250C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 20V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5252B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 24V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 1N5252C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 24V 500MW DO204AH
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5254B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 27V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.04 грн |
| 20000+ | 5.35 грн |
| 30000+ | 5.10 грн |
| 1N5254C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 41 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 27V 500MW DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 41 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5255C-TAP |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW DO35
Description: DIODE ZENER 28V 500MW DO35
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5256B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 49 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 30V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 49 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 1.43 грн |
| 1N5256C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 49 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 49 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5257C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 58 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 33V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 58 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5258B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Description: DIODE ZENER 36V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 1.48 грн |
| 20000+ | 1.39 грн |
| 30000+ | 1.36 грн |
| 1N5258C-TAP |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO35
Description: DIODE ZENER 36V 500MW DO35
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5259B-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 39V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5259C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 39V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5260C-TAP |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW DO35
Description: DIODE ZENER 43V 500MW DO35
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5261C-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Qualification: AEC-Q101
Description: DIODE ZENER 47V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 1N5267B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 75V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
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Мінімальне замовлення: 30000 шт
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| 1N5267C-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 75V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
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Мінімальне замовлення: 30000 шт
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| 1N5407GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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Мінімальне замовлення: 2000 шт
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| 1N5417-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
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Мінімальне замовлення: 12500 шт
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| 1N5418-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Description: DIODE AVALANCHE 400V 3A SOD64
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
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Мінімальне замовлення: 12500 шт
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| 1N5619GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO201AD
Description: DIODE GEN PURP 600V 1A DO201AD
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| 1N5625-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 76.76 грн |
| 5000+ | 69.97 грн |
| 1N5626-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 7.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 600V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 7.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 27.17 грн |
| 1N5627GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Description: DIODE GEN PURP 800V 3A DO201AD
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| 1N914TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 300MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 100V 300MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 4.16 грн |
| 20000+ | 3.65 грн |
| 30000+ | 3.48 грн |
| 31GF6-M3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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| BA158-E3/53 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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| BA159GPE-E3/53 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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| BA159GPEHE3/53 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: DIODE STANDARD 800V 1A DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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| BA282-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: RF DIODE STANDARD 35V DO35
Current - Max: 100 mA
Part Status: Obsolete
Supplier Device Package: DO-35 (DO-204AH)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 500mOhm @ 10mA, 200MHz
Capacitance @ Vr, F: 1.25pF @ 3V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: Standard - Single
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Description: RF DIODE STANDARD 35V DO35
Current - Max: 100 mA
Part Status: Obsolete
Supplier Device Package: DO-35 (DO-204AH)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 500mOhm @ 10mA, 200MHz
Capacitance @ Vr, F: 1.25pF @ 3V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: Standard - Single
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
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| BA283-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: RF DIODE STANDARD 35V DO35
Description: RF DIODE STANDARD 35V DO35
товару немає в наявності
Мінімальне замовлення: 50000 шт
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| BA479G-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: RF DIODE PIN 30V DO-204AH
Current - Max: 50 mA
Supplier Device Package: DO-204AH (DO-35)
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Description: RF DIODE PIN 30V DO-204AH
Current - Max: 50 mA
Supplier Device Package: DO-204AH (DO-35)
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 50000 шт
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| BA479S-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: RF DIODE PIN 30V DO-204AH
Current - Max: 50 mA
Supplier Device Package: DO-204AH (DO-35)
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Description: RF DIODE PIN 30V DO-204AH
Current - Max: 50 mA
Supplier Device Package: DO-204AH (DO-35)
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
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Мінімальне замовлення: 50000 шт
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| BAT82S-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 30MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: AEC-Q101
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Мінімальне замовлення: 50000 шт
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| BAT83S-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Description: DIODE SCHOTTKY 60V 30MA DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 50000 шт
В кошику
од. на суму грн.
| BAV17-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 20V 250MA DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 20V 250MA DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 50000 шт
В кошику
од. на суму грн.
| BAV20-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 150V 250MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 150V 250MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 1.62 грн |
| 20000+ | 1.48 грн |
| 30000+ | 1.40 грн |
| BAV21-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 250MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 200V 250MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 4.55 грн |
| 20000+ | 4.00 грн |
| BAW27-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 600mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 600mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.64 грн |
| 20000+ | 2.30 грн |
| 30000+ | 2.18 грн |
| BAW76-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 300MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 50V 300MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 1.41 грн |
| 20000+ | 1.35 грн |
| 30000+ | 1.29 грн |
| BAY135-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 125V 200MA DO35
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 3 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 125 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Description: DIODE GEN PURP 125V 200MA DO35
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 3 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 125 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
товару немає в наявності
Мінімальне замовлення: 50000 шт
В кошику
од. на суму грн.
| BY203-12STAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.2KV 250MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVAL 1.2KV 250MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| BY203-16STAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1600V 250MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Description: DIODE AVAL 1600V 250MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| BY203-20STAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2000V 250MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVAL 2000V 250MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 20.17 грн |
| 10000+ | 17.64 грн |
| BY228-13TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 12500 шт
В кошику
од. на суму грн.
| BY228-15TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE AVALANCHE 1200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 87.58 грн |
| 5000+ | 81.15 грн |
| BY228GP-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1500V 2.5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Description: DIODE STD 1500V 2.5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BY228TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 87.58 грн |
| 5000+ | 81.15 грн |
| BY251P-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery > 500ns, > 2A (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery > 500ns, > 2A (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| BY268TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1400V 800MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE STANDARD 1400V 800MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 25000 шт
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