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VS-GB100LH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 200A INT-A-PAK
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VS-GB100NH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
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VS-GB100TH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 200A INT-A-PAK
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VS-GB100TH120U VS-GB100TH120U Vishay General Semiconductor - Diodes Division VS-GB100TH120U.pdf Description: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: NPT
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
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VS-GB100TP120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 200A INT-A-PAK
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VS-GB100TP120U Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 150A INT-A-PAK
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VS-GB100TS60NPBF Vishay General Semiconductor - Diodes Division VS-GB100TS60NPbF.pdf Description: IGBT MOD 600V 108A INT-A-PAK
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VS-GB150LH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 300A INT-A-PAK
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VS-GB150TH120N VS-GB150TH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 300A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1008 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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VS-GB150TH120U Vishay General Semiconductor - Diodes Division vs-gb150th120u.pdf Description: IGBT MOD 1200V 280A INT-A-PAK
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VS-GB15XP120KTPBF Vishay General Semiconductor - Diodes Division VS-GB15XP120KTPBF.pdf Description: IGBT MODULE 1200V 30A 187W MTP
Packaging: Bulk
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: MTP
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 187 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V
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VS-GB200LH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 370A INT-A-PAK
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VS-GB200NH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 420A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1562 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
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VS-GB200TH120N VS-GB200TH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 360A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 360 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14.9 nF @ 25 V
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VS-GB200TH120U VS-GB200TH120U Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 330A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1316 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
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VS-GB300AH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 620A INT-A-PAK
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VS-GB300LH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 500A INT-A-PAK
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VS-GB300NH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 500A INT-A-PAK
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VS-GB300TH120N Vishay General Semiconductor - Diodes Division VS-GB300TH120N.pdf Description: IGBT MOD 1200V 500A INT-A-PAK
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VS-GB300TH120U Vishay General Semiconductor - Diodes Division VS-GB300TH120U.pdf Description: IGBT MOD 1200V 530A INT-A-PAK
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VS-GB400AH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 650A INT-A-PAK
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VS-GB400AH120U Vishay General Semiconductor - Diodes Division VS-GB400AH120U.pdf Description: IGBT MOD 1200V 550A INT-A-PAK
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VS-GB400TH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 800A INT-A-PAK
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VS-GB400TH120U Vishay General Semiconductor - Diodes Division VS-GB400TH120U.pdf Description: IGBT MOD 1200V 660A INT-A-PAK
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VS-GB50LP120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
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VS-GB50TP120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
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VS-GB50YF120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 66A ECONO2 4PACK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ECONO2 4PACK
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 250 µA
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VS-GB600AH120N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 910A INT-A-PAK
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VS-GB70LA60UF VS-GB70LA60UF Vishay General Semiconductor - Diodes Division VS-GB70LA60UF.pdf Description: IGBT MOD 600V 111A 447W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 447 W
Current - Collector Cutoff (Max): 100 µA
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VS-GB75DA120UP VS-GB75DA120UP Vishay General Semiconductor - Diodes Division VS-GB75DA120UP.pdf Description: IGBT MODULE 1200V 658W SOT227
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VS-GB75YF120N Vishay General Semiconductor - Diodes Division vs-gb75yf120n.pdf Description: IGBT MOD 1200V 100A ECONO2 4PACK
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VS-GB90DA120U VS-GB90DA120U Vishay General Semiconductor - Diodes Division Description: IGBT MOD 1200V 149A 862W SOT227
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VS-GT100DA120U VS-GT100DA120U Vishay General Semiconductor - Diodes Division VS-GT100DA120U.pdf Description: IGBT MOD 1200V 258A 893W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 258 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 893 W
Current - Collector Cutoff (Max): 100 µA
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VS-GT100DA60U VS-GT100DA60U Vishay General Semiconductor - Diodes Division GT100DA60U.pdf Description: IGBT MOD 600V 184A 577W SOT227
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VS-GT100NA120UX VS-GT100NA120UX Vishay General Semiconductor - Diodes Division VS-GT100NA120UX.pdf Description: IGBT MOD 1200V 134A 463W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 463 W
Current - Collector Cutoff (Max): 100 µA
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VS-GT100TP120N Vishay General Semiconductor - Diodes Division VS-GT100TP120N.pdf Description: IGBT MOD 1200V 180A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 652 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 30 V
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VS-GT175DA120U VS-GT175DA120U Vishay General Semiconductor - Diodes Division VS-GT175DA120U.pdf Description: IGBT MOD 1200V 288A 1087W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 288 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 100 µA
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VS-GT300FD060N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 600V 379A INT-A-PAK
Packaging: Bulk
Package / Case: Dual INT-A-PAK (4 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Dual INT-A-PAK
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 379 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 23.3 nF @ 30 V
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VS-GT300YH120N VS-GT300YH120N Vishay General Semiconductor - Diodes Division vs-gt300yh120n.pdf Description: IGBT MOD 1200V 341A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Current - Collector (Ic) (Max): 341 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1042 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 36 nF @ 30 V
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VS-GT400TH120N VS-GT400TH120N Vishay General Semiconductor - Diodes Division VS-GT400TH120N.pdf Description: IGBT MOD 1200V 600A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2119 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28.8 nF @ 25 V
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VS-GT400TH120U Vishay General Semiconductor - Diodes Division VS-GT400TH120U.pdf Description: IGBT MOD 1200V 750A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2344 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 51.2 nF @ 30 V
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VS-GT400TH60N VS-GT400TH60N Vishay General Semiconductor - Diodes Division Description: IGBT MOD 600V 530A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 30.8 nF @ 30 V
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VS-GT50TP120N Vishay General Semiconductor - Diodes Division VS-GT50TP120N.pdf Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 405 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.24 nF @ 30 V
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VS-GT50TP60N Vishay General Semiconductor - Diodes Division VS-GT50TP60N.pdf Description: IGBT MOD 600V 85A 208W INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.03 nF @ 30 V
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VS-KBPC806PBF VS-KBPC806PBF Vishay General Semiconductor - Diodes Division kbpc8series.pdf Description: BRIDGE RECT 1PHASE 600V 8A D-72
Packaging: Bulk
Package / Case: 4-Square, D-72
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-72
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-P104 VS-P104 Vishay General Semiconductor - Diodes Division vs-p100series.pdf Description: MOD BRIDGE CC 25A 1000V D-19
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VS-P105 VS-P105 Vishay General Semiconductor - Diodes Division vs-p100series.pdf Description: MOD BRIDGE CC 25A 1200V D-19
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VS-P124 VS-P124 Vishay General Semiconductor - Diodes Division vs-p100series.pdf Description: MOD BRIDGE DBLR 25A 1000V D-19
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VS-P133 VS-P133 Vishay General Semiconductor - Diodes Division vs-p100series.pdf Description: SCR MODULE 800V 8-PACE-PAK
Packaging: Bulk
Package / Case: 8-PACE-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Bridge, Single Phase - All SCRs
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 357A, 375A
Number of SCRs, Diodes: 4 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 800 V
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VS-P134 VS-P134 Vishay General Semiconductor - Diodes Division vs-p100series.pdf Description: SCR MODULE 1KV 8-PACE-PAK
Packaging: Bulk
Package / Case: 8-PACE-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Bridge, Single Phase - All SCRs
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 357A, 375A
Number of SCRs, Diodes: 4 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1 kV
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VS-P135 VS-P135 Vishay General Semiconductor - Diodes Division vs-p100series.pdf Description: SCR MODULE 1.2KV 8-PACE-PAK
Packaging: Bulk
Package / Case: 8-PACE-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Bridge, Single Phase - All SCRs
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 357A, 375A
Number of SCRs, Diodes: 4 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.2 kV
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VS-P401 Vishay General Semiconductor - Diodes Division vs-p400series.pdf Description: MODULE BRIDGE CC 40A 400V D-19
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VS-P405 Vishay General Semiconductor - Diodes Division vs-p400series.pdf Description: MODULE BRIDGE CC 40A 1200V D-19
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VS-P425 Vishay General Semiconductor - Diodes Division vs-p400series.pdf Description: MODULE BRIDGE DBLR 40A 1200V D-1
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VS-P435 Vishay General Semiconductor - Diodes Division vs-p400series.pdf Description: MODULE SCR BRIDGE 40A 1200V D-19
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VS-SD1100C22C Vishay General Semiconductor - Diodes Division vs-sd1100cc.pdf Description: DIODE GEN PURP 2.2KV 1100A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
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VS-SD1100C30C Vishay General Semiconductor - Diodes Division vs-sd1100cc.pdf Description: DIODE GEN PURP 3KV 1100A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
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VS-SD1100C30L Vishay General Semiconductor - Diodes Division vs-sd1100cc.pdf Description: DIODE GEN PURP 3KV 910A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 910A
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
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VS-SD1553C18S20K VS-SD1553C18S20K Vishay General Semiconductor - Diodes Division mounting.pdf Description: DIODE GP 1.8KV 1825A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1825A
Supplier Device Package: DO-200AC, K-PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 4000 A
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VS-SD1553C25S20K VS-SD1553C25S20K Vishay General Semiconductor - Diodes Division mounting.pdf Description: DIODE GP 2.5KV 1825A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1825A
Supplier Device Package: DO-200AC, K-PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 4000 A
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VS-GB100LH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
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VS-GB100NH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
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VS-GB100TH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
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VS-GB100TH120U VS-GB100TH120U.pdf
VS-GB100TH120U
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: NPT
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
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VS-GB100TP120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK
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VS-GB100TP120U
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 150A INT-A-PAK
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VS-GB100TS60NPBF VS-GB100TS60NPbF.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 108A INT-A-PAK
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VS-GB150LH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 300A INT-A-PAK
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VS-GB150TH120N
VS-GB150TH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 300A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1008 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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VS-GB150TH120U vs-gb150th120u.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 280A INT-A-PAK
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VS-GB15XP120KTPBF VS-GB15XP120KTPBF.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 30A 187W MTP
Packaging: Bulk
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: MTP
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 187 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V
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VS-GB200LH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 370A INT-A-PAK
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VS-GB200NH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 420A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1562 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
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VS-GB200TH120N
VS-GB200TH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 360A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 360 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14.9 nF @ 25 V
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VS-GB200TH120U
VS-GB200TH120U
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 330A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1316 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
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VS-GB300AH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 620A INT-A-PAK
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VS-GB300LH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 500A INT-A-PAK
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VS-GB300NH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 500A INT-A-PAK
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VS-GB300TH120N VS-GB300TH120N.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 500A INT-A-PAK
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VS-GB300TH120U VS-GB300TH120U.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 530A INT-A-PAK
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VS-GB400AH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 650A INT-A-PAK
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VS-GB400AH120U VS-GB400AH120U.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 550A INT-A-PAK
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VS-GB400TH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 800A INT-A-PAK
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VS-GB400TH120U VS-GB400TH120U.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 660A INT-A-PAK
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VS-GB50LP120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
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VS-GB50TP120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
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VS-GB50YF120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 66A ECONO2 4PACK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ECONO2 4PACK
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 250 µA
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VS-GB600AH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 910A INT-A-PAK
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VS-GB70LA60UF VS-GB70LA60UF.pdf
VS-GB70LA60UF
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 111A 447W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 447 W
Current - Collector Cutoff (Max): 100 µA
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VS-GB75DA120UP VS-GB75DA120UP.pdf
VS-GB75DA120UP
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 658W SOT227
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VS-GB75YF120N vs-gb75yf120n.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A ECONO2 4PACK
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VS-GB90DA120U
VS-GB90DA120U
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 149A 862W SOT227
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VS-GT100DA120U VS-GT100DA120U.pdf
VS-GT100DA120U
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 258A 893W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 258 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 893 W
Current - Collector Cutoff (Max): 100 µA
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VS-GT100DA60U GT100DA60U.pdf
VS-GT100DA60U
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 184A 577W SOT227
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VS-GT100NA120UX VS-GT100NA120UX.pdf
VS-GT100NA120UX
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 134A 463W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 463 W
Current - Collector Cutoff (Max): 100 µA
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VS-GT100TP120N VS-GT100TP120N.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 180A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 652 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 30 V
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VS-GT175DA120U VS-GT175DA120U.pdf
VS-GT175DA120U
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 288A 1087W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 288 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 100 µA
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VS-GT300FD060N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 379A INT-A-PAK
Packaging: Bulk
Package / Case: Dual INT-A-PAK (4 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Dual INT-A-PAK
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 379 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 23.3 nF @ 30 V
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VS-GT300YH120N vs-gt300yh120n.pdf
VS-GT300YH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 341A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Current - Collector (Ic) (Max): 341 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1042 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 36 nF @ 30 V
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VS-GT400TH120N VS-GT400TH120N.pdf
VS-GT400TH120N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 600A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2119 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28.8 nF @ 25 V
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VS-GT400TH120U VS-GT400TH120U.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 750A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2344 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 51.2 nF @ 30 V
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VS-GT400TH60N
VS-GT400TH60N
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 530A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 30.8 nF @ 30 V
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VS-GT50TP120N VS-GT50TP120N.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 100A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 405 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.24 nF @ 30 V
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VS-GT50TP60N VS-GT50TP60N.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 85A 208W INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.03 nF @ 30 V
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VS-KBPC806PBF kbpc8series.pdf
VS-KBPC806PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 8A D-72
Packaging: Bulk
Package / Case: 4-Square, D-72
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-72
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-P104 vs-p100series.pdf
VS-P104
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOD BRIDGE CC 25A 1000V D-19
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VS-P105 vs-p100series.pdf
VS-P105
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOD BRIDGE CC 25A 1200V D-19
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VS-P124 vs-p100series.pdf
VS-P124
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOD BRIDGE DBLR 25A 1000V D-19
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VS-P133 vs-p100series.pdf
VS-P133
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 800V 8-PACE-PAK
Packaging: Bulk
Package / Case: 8-PACE-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Bridge, Single Phase - All SCRs
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 357A, 375A
Number of SCRs, Diodes: 4 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 800 V
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VS-P134 vs-p100series.pdf
VS-P134
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1KV 8-PACE-PAK
Packaging: Bulk
Package / Case: 8-PACE-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Bridge, Single Phase - All SCRs
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 357A, 375A
Number of SCRs, Diodes: 4 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1 kV
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VS-P135 vs-p100series.pdf
VS-P135
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.2KV 8-PACE-PAK
Packaging: Bulk
Package / Case: 8-PACE-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Bridge, Single Phase - All SCRs
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 357A, 375A
Number of SCRs, Diodes: 4 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.2 kV
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VS-P401 vs-p400series.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE BRIDGE CC 40A 400V D-19
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VS-P405 vs-p400series.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE BRIDGE CC 40A 1200V D-19
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VS-P425 vs-p400series.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE BRIDGE DBLR 40A 1200V D-1
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VS-P435 vs-p400series.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE SCR BRIDGE 40A 1200V D-19
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VS-SD1100C22C vs-sd1100cc.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2.2KV 1100A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
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VS-SD1100C30C vs-sd1100cc.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 3KV 1100A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
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VS-SD1100C30L vs-sd1100cc.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 3KV 910A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 910A
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
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VS-SD1553C18S20K mounting.pdf
VS-SD1553C18S20K
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.8KV 1825A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1825A
Supplier Device Package: DO-200AC, K-PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 4000 A
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VS-SD1553C25S20K mounting.pdf
VS-SD1553C25S20K
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.5KV 1825A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1825A
Supplier Device Package: DO-200AC, K-PUK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 4000 A
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