Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40689) > Сторінка 560 з 679
| Фото | Назва | Виробник | Інформація |
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VS-6CWQ10FNTRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 100V 3.5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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VS-6CWQ10FNTRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 100V 3.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
на замовлення 3276 шт: термін постачання 21-31 дні (днів) |
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PLZ16A-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW DO219ACPackaging: Tape & Reel (TR) Tolerance: ±3% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 18 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PLZ16A-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW DO219ACPackaging: Cut Tape (CT) Tolerance: ±3% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 18 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 12 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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VSSA3L6S-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 395pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V |
на замовлення 14400 шт: термін постачання 21-31 дні (днів) |
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VSSA3L6S-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2.5A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 395pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V |
на замовлення 15485 шт: термін постачання 21-31 дні (днів) |
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V40120C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 120V TO220 |
на замовлення 788 шт: термін постачання 21-31 дні (днів) |
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V40120C-E3L/4W | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY SCHOTTKY |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V15KM60CHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 5.1A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5.1A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A Current - Reverse Leakage @ Vr: 900 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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V15KM60CHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 5.1A FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5.1A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A Current - Reverse Leakage @ Vr: 900 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 2998 шт: термін постачання 21-31 дні (днів) |
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V15KM60CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 5.1A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5.1A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A Current - Reverse Leakage @ Vr: 900 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V10KM60C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 4.8A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4.8A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V15KM60C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 5.1A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5.1A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A Current - Reverse Leakage @ Vr: 900 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V15KM60C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 5.1A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5.1A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A Current - Reverse Leakage @ Vr: 900 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V10KM60CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 4.8A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4.8A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V30KM60-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V20KM60-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.7A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2860pF @ 4V, 1MHz Current - Average Rectified (Io): 4.7A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V30KM60HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V20KM60HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.7A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2860pF @ 4V, 1MHz Current - Average Rectified (Io): 4.7A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ20CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 32.4VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 18.5A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB540A-M3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 459VWM 740VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 810mA Voltage - Reverse Standoff (Typ): 459V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 513V Voltage - Clamping (Max) @ Ipp: 740V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 667 шт: термін постачання 21-31 дні (днів) |
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P6SMB540A-M3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 459VWM 740VC DO214AAPackaging: Tape & Box (TB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 810mA Voltage - Reverse Standoff (Typ): 459V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 513V Voltage - Clamping (Max) @ Ipp: 740V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TA6F10AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 8.55VWM 14.5VC DO221AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 1.5KA12AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 10.2VWM 16.7VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA15HE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12.1VWM 22VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA9.1AHE3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA47AHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA11HE3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 8.92VWM 16.2VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA16HE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12.9VWM 23.5VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA22HE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA39AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA9.1AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA15AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12.8VWM 21.2VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA36HE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 29.1VWM 52VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA9.1AHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA22HE3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA39HE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA39HE3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA47HE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 38.1VWM 67.8VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA47AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA22AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 18.8VWM 30.6VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAS40-02V-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 120MA SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS40-02V-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 120MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2332 шт: термін постачання 21-31 дні (днів) |
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VX80M100PW-M3/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 40A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A Current - Reverse Leakage @ Vr: 600 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 511 шт: термін постачання 21-31 дні (днів) |
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VX80M100PWHM3/P | Vishay General Semiconductor - Diodes Division |
Description: 80A,100V,TRENCH SCHOTTKY RECT. |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TPC9.1AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC TO277A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1AHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
1.5SMC9.1CAHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1CAHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TPSMC9.1AHE3_B/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX55B4V3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 500MW DO204AHTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B4V3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 500MW DO204AHTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 8593 шт: термін постачання 21-31 дні (днів) |
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BZX55B6V8-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO204AHPackaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX55B6V8-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13760 шт: термін постачання 21-31 дні (днів) |
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BZT55B18-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW SOD80Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-80 QuadroMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 13 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZT55B18-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-80 QuadroMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 13 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12253 шт: термін постачання 21-31 дні (днів) |
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BZT55B2V7-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.7V 500MW SOD80Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-80 QuadroMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-6CWQ10FNTRL-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 100V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARRAY SCHOT 100V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.30 грн |
| VS-6CWQ10FNTRL-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 100V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARRAY SCHOT 100V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 3276 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.95 грн |
| 10+ | 44.16 грн |
| 100+ | 35.27 грн |
| 500+ | 25.71 грн |
| 1000+ | 23.34 грн |
| PLZ16A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Description: DIODE ZENER 16V 500MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| PLZ16A-G3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Description: DIODE ZENER 16V 500MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.82 грн |
| VSSA3L6S-M3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 395pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V
Description: DIODE SCHOTTKY 60V 2.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 395pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V
на замовлення 14400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 10.55 грн |
| 3600+ | 9.31 грн |
| 5400+ | 8.87 грн |
| 9000+ | 7.86 грн |
| 12600+ | 7.59 грн |
| VSSA3L6S-M3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 395pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V
Description: DIODE SCHOTTKY 60V 2.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 395pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V
на замовлення 15485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.41 грн |
| 15+ | 23.04 грн |
| 100+ | 15.58 грн |
| 500+ | 11.40 грн |
| V40120C-E3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 120V TO220
Description: DIODE ARRAY SCHOTTKY 120V TO220
на замовлення 788 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 188.27 грн |
| 10+ | 162.75 грн |
| 100+ | 130.81 грн |
| 500+ | 100.85 грн |
| V40120C-E3L/4W |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY
Description: DIODE ARRAY SCHOTTKY
товару немає в наявності
В кошику
од. на суму грн.
| V15KM60CHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 35.57 грн |
| V15KM60CHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.22 грн |
| 10+ | 75.76 грн |
| 100+ | 50.42 грн |
| 500+ | 37.11 грн |
| V15KM60CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V10KM60C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V15KM60C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V15KM60C-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 5.1A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.1A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V10KM60CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V30KM60-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V20KM60-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.7A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2860pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.7A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 4.7A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2860pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.7A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V30KM60HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V20KM60HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.7A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2860pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.7A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 4.7A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2860pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.7A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ20CAHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| P6SMB540A-M3/52 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 459VWM 740VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 459V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 513V
Voltage - Clamping (Max) @ Ipp: 740V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 459VWM 740VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 459V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 513V
Voltage - Clamping (Max) @ Ipp: 740V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 667 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.41 грн |
| 10+ | 41.41 грн |
| 100+ | 28.52 грн |
| P6SMB540A-M3/52 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 459VWM 740VC DO214AA
Packaging: Tape & Box (TB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 459V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 513V
Voltage - Clamping (Max) @ Ipp: 740V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 459VWM 740VC DO214AA
Packaging: Tape & Box (TB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 459V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 513V
Voltage - Clamping (Max) @ Ipp: 740V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 750+ | 17.25 грн |
| TA6F10AHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.55VWM 14.5VC DO221AC
Description: TVS DIODE 8.55VWM 14.5VC DO221AC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KA12AHE3/51 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC 1.5KA
Description: TVS DIODE 10.2VWM 16.7VC 1.5KA
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В кошику
од. на суму грн.
| 1.5KA15HE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.1VWM 22VC 1.5KA
Description: TVS DIODE 12.1VWM 22VC 1.5KA
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| 1.5KA9.1AHE3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
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В кошику
од. на суму грн.
| 1.5KA47AHE3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA
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| 1.5KA11HE3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.92VWM 16.2VC 1.5KA
Description: TVS DIODE 8.92VWM 16.2VC 1.5KA
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| 1.5KA16HE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.9VWM 23.5VC 1.5KA
Description: TVS DIODE 12.9VWM 23.5VC 1.5KA
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| 1.5KA22HE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA
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| 1.5KA39AHE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KA
Description: TVS DIODE 33.3VWM 53.9VC 1.5KA
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| 1.5KA9.1AHE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
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од. на суму грн.
| 1.5KA15AHE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2VC 1.5KA
Description: TVS DIODE 12.8VWM 21.2VC 1.5KA
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| 1.5KA36HE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 29.1VWM 52VC 1.5KA
Description: TVS DIODE 29.1VWM 52VC 1.5KA
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од. на суму грн.
| 1.5KA9.1AHE3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
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од. на суму грн.
| 1.5KA22HE3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA
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од. на суму грн.
| 1.5KA39HE3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
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| 1.5KA39HE3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
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| 1.5KA47HE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 38.1VWM 67.8VC 1.5KA
Description: TVS DIODE 38.1VWM 67.8VC 1.5KA
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од. на суму грн.
| 1.5KA47AHE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA
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од. на суму грн.
| 1.5KA22AHE3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC 1.5KA
Description: TVS DIODE 18.8VWM 30.6VC 1.5KA
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од. на суму грн.
| BAS40-02V-HG3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| BAS40-02V-HG3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2332 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.68 грн |
| 34+ | 9.90 грн |
| 100+ | 7.55 грн |
| 500+ | 5.32 грн |
| 1000+ | 4.62 грн |
| 2000+ | 4.29 грн |
| VX80M100PW-M3/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Current - Reverse Leakage @ Vr: 600 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Current - Reverse Leakage @ Vr: 600 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 511 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 271.17 грн |
| 25+ | 144.10 грн |
| 100+ | 119.65 грн |
| 500+ | 104.77 грн |
| VX80M100PWHM3/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 80A,100V,TRENCH SCHOTTKY RECT.
Description: 80A,100V,TRENCH SCHOTTKY RECT.
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 254.76 грн |
| 10+ | 220.54 грн |
| 100+ | 180.69 грн |
| 500+ | 144.36 грн |
| 1000+ | 135.37 грн |
| TPC9.1AHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC TO277A
Description: TVS DIODE 7.78VWM 13.4VC TO277A
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1CAHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1CAHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC SMC
Description: TVS DIODE 7.78VWM 13.4VC SMC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1AHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1AHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1CAHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1CAHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| TPSMC9.1AHE3_B/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B4V3-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B4V3-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Qualification: AEC-Q101
на замовлення 8593 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.50 грн |
| 57+ | 5.90 грн |
| 125+ | 2.68 грн |
| 500+ | 2.38 грн |
| 1000+ | 2.18 грн |
| 2000+ | 2.15 грн |
| 5000+ | 2.08 грн |
| BZX55B6V8-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.33 грн |
| BZX55B6V8-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13760 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.50 грн |
| 56+ | 5.99 грн |
| 128+ | 2.61 грн |
| 500+ | 2.32 грн |
| 1000+ | 2.12 грн |
| 2000+ | 2.02 грн |
| BZT55B18-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 18V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 3.03 грн |
| 5000+ | 2.71 грн |
| BZT55B18-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 18V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| 20+ | 16.96 грн |
| 100+ | 8.27 грн |
| 500+ | 6.47 грн |
| 1000+ | 4.50 грн |
| BZT55B2V7-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.














