Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41958) > Сторінка 561 з 700
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1.5KA9.1AHE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA22HE3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA39HE3/73 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA39HE3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA47HE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 38.1VWM 67.8VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA47AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1.5KA22AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 18.8VWM 30.6VC 1.5KA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAS40-02V-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 120MA SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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BAS40-02V-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 120MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VX80M100PW-M3/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 40A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A Current - Reverse Leakage @ Vr: 600 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 1975 шт: термін постачання 21-31 дні (днів) |
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VX80M100PWHM3/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 40A TO247AD |
на замовлення 561 шт: термін постачання 21-31 дні (днів) |
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TPC9.1AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC TO277A |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1AHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1CAHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC9.1CAHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TPSMC9.1AHE3_B/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AB |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | |||||||||||||||
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BZX55B4V3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 500MW DO204AHTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX55B4V3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 500MW DO204AHTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 17357 шт: термін постачання 21-31 дні (днів) |
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BZX55B6V8-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO204AHTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX55B6V8-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO204AHTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V Qualification: AEC-Q101 |
на замовлення 13712 шт: термін постачання 21-31 дні (днів) |
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BZT55B18-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW SOD80Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 13 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZT55B18-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW SOD80Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 13 V Qualification: AEC-Q101 |
на замовлення 11552 шт: термін постачання 21-31 дні (днів) |
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BZT55B2V7-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.7V 500MW SOD80Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT55B2V7-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.7V 500MW SOD80Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 6330 шт: термін постачання 21-31 дні (днів) |
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BZT55B3V9-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 500MW SOD80Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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BZT55B3V9-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 500MW SOD80Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 15309 шт: термін постачання 21-31 дні (днів) |
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BZT55C3V6-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 500MW SOD80Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT55C3V6-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 4688 шт: термін постачання 21-31 дні (днів) |
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BZT55C3V0-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW SOD80Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BZT55C3V0-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 7814 шт: термін постачання 21-31 дні (днів) |
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BZT52C12-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 410MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BZT52C12-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 410MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V |
на замовлення 10792 шт: термін постачання 21-31 дні (днів) |
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MMSZ5237C-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW SOD123 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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MMSZ5237C-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW SOD123 |
на замовлення 8013 шт: термін постачання 21-31 дні (днів) |
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MMSZ5237B-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5237B-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V |
на замовлення 14855 шт: термін постачання 21-31 дні (днів) |
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SMCJ100CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 100VWM 162VC DO214AB |
товару немає в наявності |
Мінімальне замовлення: 3400 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ100CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 100VWM 162VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive, Telecom Current - Peak Pulse (10/1000µs): 9.3A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ100CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 100VWM 162VC DO214AB |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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BZX84B6V2-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 300MW SOT23-3Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Last Time Buy Power - Max: 300 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B6V2-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 300MW SOT23-3Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Last Time Buy Power - Max: 300 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AS1FD-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 200V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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AS1FMHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 1000V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AS1FK-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 800V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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AS1FDHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 200V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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AS1FGHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 400V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AS1FJHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 600V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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AS1FKHM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 800V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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AS1FG-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 400V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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AS1FJ-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 600V 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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VS-15TQ060STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 15A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 720pF @ 5V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 60 V |
на замовлення 2760 шт: термін постачання 21-31 дні (днів) |
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VS-15TQ060STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 15A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 720pF @ 5V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 60 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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SMCJ100CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 100VWM 162VC DO214AB |
товару немає в наявності |
Мінімальне замовлення: 6800 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ100CAHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 100VWM 162VC DO214AB |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||||
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VT6045CBP-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 30A TO2203Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220-3 Operating Temperature - Junction: 200°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
на замовлення 1623 шт: термін постачання 21-31 дні (днів) |
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VFT3045CBP-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 45V 15A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: ITO-220AB Operating Temperature - Junction: 200°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 2 mA @ 45 V |
на замовлення 234 шт: термін постачання 21-31 дні (днів) |
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ES2BHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: AEC-Q101 |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
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| 1.5KA9.1AHE3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KA22HE3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KA39HE3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KA39HE3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KA47HE3/51 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 38.1VWM 67.8VC 1.5KA
Description: TVS DIODE 38.1VWM 67.8VC 1.5KA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KA47AHE3/51 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KA22AHE3/51 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC 1.5KA
Description: TVS DIODE 18.8VWM 30.6VC 1.5KA
товару немає в наявності
В кошику
од. на суму грн.
| BAS40-02V-HG3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| BAS40-02V-HG3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VX80M100PW-M3/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Current - Reverse Leakage @ Vr: 600 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 100V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Current - Reverse Leakage @ Vr: 600 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 378.72 грн |
| 25+ | 210.59 грн |
| 100+ | 173.74 грн |
| 500+ | 135.35 грн |
| 1000+ | 126.47 грн |
| VX80M100PWHM3/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 40A TO247AD
Description: DIODE ARR SCHOT 100V 40A TO247AD
на замовлення 561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 437.34 грн |
| 25+ | 245.55 грн |
| 100+ | 203.70 грн |
| 500+ | 159.72 грн |
| TPC9.1AHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC TO277A
Description: TVS DIODE 7.78VWM 13.4VC TO277A
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| 1.5SMC9.1CAHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1CAHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC SMC
Description: TVS DIODE 7.78VWM 13.4VC SMC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1AHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1AHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1CAHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC9.1CAHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| TPSMC9.1AHE3_B/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| BZX55B4V3-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZX55B4V3-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Qualification: AEC-Q101
на замовлення 17357 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.48 грн |
| 15+ | 21.02 грн |
| 50+ | 15.24 грн |
| 100+ | 12.52 грн |
| 500+ | 9.39 грн |
| BZX55B6V8-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.07 грн |
| BZX55B6V8-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
на замовлення 13712 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.48 грн |
| 56+ | 5.35 грн |
| 129+ | 2.32 грн |
| 500+ | 2.06 грн |
| 1000+ | 1.88 грн |
| 2000+ | 1.79 грн |
| BZT55B18-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 5.80 грн |
| 7500+ | 4.75 грн |
| BZT55B18-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
на замовлення 11552 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.22 грн |
| 19+ | 15.67 грн |
| 50+ | 11.26 грн |
| 100+ | 9.22 грн |
| 500+ | 6.85 грн |
| BZT55B2V7-GS18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZT55B2V7-GS18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
на замовлення 6330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.14 грн |
| 20+ | 15.15 грн |
| 100+ | 7.39 грн |
| 500+ | 5.78 грн |
| 1000+ | 4.02 грн |
| 2000+ | 3.48 грн |
| 5000+ | 3.18 грн |
| BZT55B3V9-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 5.39 грн |
| 7500+ | 4.41 грн |
| BZT55B3V9-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
на замовлення 15309 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.68 грн |
| 21+ | 14.71 грн |
| 50+ | 10.53 грн |
| 100+ | 8.62 грн |
| 500+ | 6.38 грн |
| BZT55C3V6-GS18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZT55C3V6-GS18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
на замовлення 4688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.85 грн |
| 17+ | 18.05 грн |
| 50+ | 13.03 грн |
| 100+ | 10.69 грн |
| 500+ | 7.97 грн |
| BZT55C3V0-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 6.74 грн |
| 7500+ | 5.55 грн |
| BZT55C3V0-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Qualification: AEC-Q101
на замовлення 7814 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.85 грн |
| 17+ | 17.90 грн |
| 50+ | 12.95 грн |
| 100+ | 10.62 грн |
| 500+ | 7.92 грн |
| BZT52C12-G3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.89 грн |
| BZT52C12-G3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
на замовлення 10792 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.14 грн |
| 22+ | 13.74 грн |
| 50+ | 9.85 грн |
| 100+ | 8.06 грн |
| 500+ | 5.97 грн |
| MMSZ5237C-E3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MMSZ5237C-E3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
на замовлення 8013 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.14 грн |
| 16+ | 18.57 грн |
| 100+ | 9.84 грн |
| 500+ | 6.08 грн |
| 1000+ | 4.13 грн |
| 2000+ | 3.73 грн |
| 5000+ | 3.19 грн |
| MMSZ5237B-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.29 грн |
| 6000+ | 2.84 грн |
| 9000+ | 2.66 грн |
| MMSZ5237B-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
на замовлення 14855 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.80 грн |
| 41+ | 7.28 грн |
| 100+ | 3.73 грн |
| 500+ | 3.30 грн |
| 1000+ | 3.11 грн |
| SMCJ100CAHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товару немає в наявності
Мінімальне замовлення: 3400 шт
В кошику
од. на суму грн.
| SMCJ100CAHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 100VWM 162VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ100CAHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| BZX84B6V2-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZX84B6V2-HE3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| AS1FD-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.67 грн |
| 6000+ | 4.42 грн |
| AS1FMHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.81 грн |
| AS1FK-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.90 грн |
| 6000+ | 6.03 грн |
| 9000+ | 5.72 грн |
| 15000+ | 5.04 грн |
| AS1FDHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.85 грн |
| 6000+ | 6.00 грн |
| 9000+ | 5.70 грн |
| AS1FGHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.54 грн |
| AS1FJHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.54 грн |
| AS1FKHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.34 грн |
| 6000+ | 6.77 грн |
| 9000+ | 6.09 грн |
| AS1FG-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.92 грн |
| 9000+ | 7.43 грн |
| AS1FJ-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.64 грн |
| 6000+ | 6.25 грн |
| 9000+ | 5.53 грн |
| VS-15TQ060STRL-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
на замовлення 2760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.06 грн |
| 10+ | 119.06 грн |
| 100+ | 81.68 грн |
| VS-15TQ060STRL-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 64.47 грн |
| 1600+ | 57.51 грн |
| SMCJ100CAHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товару немає в наявності
Мінімальне замовлення: 6800 шт
В кошику
од. на суму грн.
| SMCJ100CAHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товару немає в наявності
Мінімальне замовлення: 7000 шт
В кошику
од. на суму грн.
| VT6045CBP-M3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 30A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 1623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.65 грн |
| 10+ | 161.03 грн |
| 100+ | 129.18 грн |
| 500+ | 99.44 грн |
| 1000+ | 92.44 грн |
| VFT3045CBP-M3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.21 грн |
| 50+ | 103.52 грн |
| 100+ | 85.18 грн |
| ES2BHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3200+ | 11.71 грн |
















