Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41148) > Сторінка 630 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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MMBD6050-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 70V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBD6050-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 70V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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5KP130AHE3_A/C | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 130VWM 209VC P600Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 23.9A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ15CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 24.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 61.5A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3400 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ15CAHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 24.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 61.5A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52C3V9-HE3_A-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 300MW SOD123Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 1 V Power - Max: 300 mW Grade: Automotive Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 95 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52C3V9-HE3_A-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 300MW SOD123Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 1 V Power - Max: 300 mW Grade: Automotive Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 95 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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SMAJ54CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 54VWM 87.1VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 4.6A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ26CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 26VWM 42.1VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 9.5A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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V2NM103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 1.8A DFN3820APackaging: Tape & Reel (TR) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 220pF @ 4V, 1MHz Current - Average Rectified (Io): 1.8A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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V2NM103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 1.8A DFN3820APackaging: Cut Tape (CT) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 220pF @ 4V, 1MHz Current - Average Rectified (Io): 1.8A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 13470 шт: термін постачання 21-31 дні (днів) |
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V2NM103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 1.8A DFN3820APackaging: Tape & Reel (TR) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 220pF @ 4V, 1MHz Current - Average Rectified (Io): 1.8A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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V2NM103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 1.8A DFN3820APackaging: Cut Tape (CT) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 220pF @ 4V, 1MHz Current - Average Rectified (Io): 1.8A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 13449 шт: термін постачання 21-31 дні (днів) |
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V3NM103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DFN3820APackaging: Tape & Reel (TR) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 440pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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V3NM103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DFN3820APackaging: Cut Tape (CT) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 440pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 11922 шт: термін постачання 21-31 дні (днів) |
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V5NM103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 2.1A DFN3820APackaging: Tape & Reel (TR) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 580pF @ 4V, 1MHz Current - Average Rectified (Io): 2.1A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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V5NM103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 2.1A DFN3820APackaging: Cut Tape (CT) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 580pF @ 4V, 1MHz Current - Average Rectified (Io): 2.1A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 11719 шт: термін постачання 21-31 дні (днів) |
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V3NM103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DFN3820APackaging: Tape & Reel (TR) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 440pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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V3NM103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DFN3820APackaging: Cut Tape (CT) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 440pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 9738 шт: термін постачання 21-31 дні (днів) |
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V5NM103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 2.1A DFN3820APackaging: Tape & Reel (TR) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 580pF @ 4V, 1MHz Current - Average Rectified (Io): 2.1A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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V5NM103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 2.1A DFN3820APackaging: Cut Tape (CT) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 580pF @ 4V, 1MHz Current - Average Rectified (Io): 2.1A Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 13190 шт: термін постачання 21-31 дні (днів) |
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SE30DT12-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A SMPDPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.4 µs Technology: Standard Capacitance @ Vr, F: 132pF @ 4V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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SE30DT12-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A SMPDPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.4 µs Technology: Standard Capacitance @ Vr, F: 132pF @ 4V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
на замовлення 866 шт: термін постачання 21-31 дні (днів) |
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SE30DT12HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A SMPDPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.4 µs Technology: Standard Capacitance @ Vr, F: 132pF @ 4V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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SE30DT12HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A SMPDPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.4 µs Technology: Standard Capacitance @ Vr, F: 132pF @ 4V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 650 шт: термін постачання 21-31 дні (днів) |
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BYWB29-150HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 8A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BYWB29-50HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 8A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BYWF29-100HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 8A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BYWF29-150HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 8A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BYWF29-200HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BYWF29-50HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 8A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BYWB29-150HE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 8A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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BYWB29-50HE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 8A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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MMSZ5244B-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5244B-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5244B-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5244B-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 10 V Qualification: AEC-Q101 |
на замовлення 6081 шт: термін постачання 21-31 дні (днів) |
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MMSZ5244B-HE3_A-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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MMSZ5244B-HE3_A-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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1N5253B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 25V 500MW DO204AHTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 25 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
на замовлення 9514 шт: термін постачання 21-31 дні (днів) |
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1N5253B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 25V 500MW DO204AHTolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 25 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SMAJ75AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 75VWM 121VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 3.3A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7200 шт В кошику од. на суму грн. | ||||||||||||||
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SMAJ75AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 75VWM 121VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 3.3A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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SMAJ75AHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 75VWM 121VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 3.3A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ75AHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 75VWM 121VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 3.3A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S1G-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 824400 шт: термін постачання 21-31 дні (днів) |
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TLZ22A-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 500MW SOD80Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLZ22A-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 500MW SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V |
на замовлення 12494 шт: термін постачання 21-31 дні (днів) |
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MMSZ5252C-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW SOD123Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5252C-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW SOD123Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
на замовлення 103112 шт: термін постачання 21-31 дні (днів) |
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BZX384B51-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 51V 200MW SOD323Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V Power - Max: 200 mW Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 180 Ohms Voltage - Zener (Nom) (Vz): 51 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±2% Packaging: Tape & Reel (TR) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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BZX384B51-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 51V 200MW SOD323Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V Power - Max: 200 mW Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 180 Ohms Voltage - Zener (Nom) (Vz): 51 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±2% |
на замовлення 23595 шт: термін постачання 21-31 дні (днів) |
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1.5KE43CAHE3_B/C | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 36.8VWM 59.3VC 1.5KEPackaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 36.8V Supplier Device Package: 1.5KE Bidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2800 шт В кошику од. на суму грн. | ||||||||||||||
| MBRB745-E3C/I | Vishay General Semiconductor - Diodes Division |
Description: VISHAY Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBRB745HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 7.5A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 7.5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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MBRB745-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 7.5A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 7.5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| MBRB745-M3C/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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VS-30MQ040HM3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 134pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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VS-30MQ040HM3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A DO214ACQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 134pF @ 10V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 4183 шт: термін постачання 21-31 дні (днів) |
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VS-30WQ04FNTRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3.5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 189pF @ 5V, 1MHz Current - Average Rectified (Io): 3.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| MMBD6050-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.79 грн |
| MMBD6050-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.14 грн |
| 37+ | 8.25 грн |
| 100+ | 5.09 грн |
| 500+ | 3.48 грн |
| 1000+ | 3.06 грн |
| 5KP130AHE3_A/C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 130VWM 209VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 130VWM 209VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| SMCJ15CAHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3400 шт
В кошику
од. на суму грн.
| SMCJ15CAHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| BZT52C3V9-HE3_A-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 300MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 3.9V 300MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZT52C3V9-HE3_A-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 300MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 3.9V 300MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| SMAJ54CAHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 54VWM 87.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ26CAHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26VWM 42.1VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7500+ | 8.89 грн |
| V2NM103HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| V2NM103HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.70 грн |
| 11+ | 29.05 грн |
| 100+ | 18.63 грн |
| 500+ | 13.27 грн |
| 1000+ | 11.91 грн |
| 2000+ | 10.76 грн |
| 5000+ | 9.36 грн |
| V2NM103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| V2NM103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 100V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.42 грн |
| 13+ | 24.89 грн |
| 100+ | 15.87 грн |
| 500+ | 11.24 грн |
| 1000+ | 10.05 грн |
| 2000+ | 9.06 грн |
| 5000+ | 7.85 грн |
| V3NM103HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| V3NM103HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
на замовлення 11922 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.35 грн |
| 10+ | 34.19 грн |
| 100+ | 22.10 грн |
| 500+ | 15.83 грн |
| 1000+ | 14.25 грн |
| 2000+ | 12.92 грн |
| 5000+ | 11.29 грн |
| V5NM103-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| V5NM103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 11719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.56 грн |
| 10+ | 33.97 грн |
| 100+ | 21.92 грн |
| 500+ | 15.70 грн |
| 1000+ | 14.13 грн |
| 2000+ | 12.81 грн |
| 5000+ | 11.19 грн |
| V3NM103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| V3NM103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Qualification: AEC-Q101
на замовлення 9738 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.49 грн |
| 11+ | 29.28 грн |
| 100+ | 18.78 грн |
| 500+ | 13.38 грн |
| 1000+ | 12.01 грн |
| 2000+ | 10.85 грн |
| 5000+ | 9.44 грн |
| V5NM103HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| V5NM103HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 100V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 13190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.99 грн |
| 10+ | 39.64 грн |
| 100+ | 25.79 грн |
| 500+ | 18.59 грн |
| 1000+ | 16.78 грн |
| 2000+ | 15.25 грн |
| 5000+ | 13.38 грн |
| SE30DT12-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| SE30DT12-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 170.47 грн |
| 10+ | 111.81 грн |
| 100+ | 80.03 грн |
| 500+ | 61.92 грн |
| SE30DT12HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| SE30DT12HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 171.25 грн |
| 10+ | 112.71 грн |
| 100+ | 89.68 грн |
| 500+ | 70.69 грн |
| BYWB29-150HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYWB29-50HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYWF29-100HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYWF29-150HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYWF29-200HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYWF29-50HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYWB29-150HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BYWB29-50HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MMSZ5244B-E3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.47 грн |
| MMSZ5244B-E3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.64 грн |
| 25+ | 12.56 грн |
| 100+ | 6.15 грн |
| 500+ | 4.81 грн |
| 1000+ | 3.34 грн |
| 2000+ | 2.90 грн |
| 5000+ | 2.64 грн |
| MMSZ5244B-HE3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5244B-HE3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
на замовлення 6081 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.42 грн |
| 23+ | 13.24 грн |
| 100+ | 6.45 грн |
| 500+ | 5.05 грн |
| 1000+ | 3.51 грн |
| 2000+ | 3.04 грн |
| 5000+ | 2.77 грн |
| MMSZ5244B-HE3_A-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MMSZ5244B-HE3_A-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| 1N5253B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 25V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 9514 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.64 грн |
| 53+ | 5.75 грн |
| 123+ | 2.47 грн |
| 500+ | 2.25 грн |
| 1000+ | 2.01 грн |
| 1N5253B-TAP |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 25V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.02 грн |
| 20000+ | 1.72 грн |
| SMAJ75AHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 7200 шт
В кошику
од. на суму грн.
| SMAJ75AHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SMAJ75AHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ75AHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| S1G-E3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 824400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 3.18 грн |
| 3600+ | 2.89 грн |
| 5400+ | 2.85 грн |
| 9000+ | 2.55 грн |
| 12600+ | 2.43 грн |
| 18000+ | 2.30 грн |
| TLZ22A-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V
Description: DIODE ZENER 22V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 2.98 грн |
| 5000+ | 2.66 грн |
| TLZ22A-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V
Description: DIODE ZENER 22V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 19.1 V
на замовлення 12494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.07 грн |
| 26+ | 11.65 грн |
| 100+ | 5.72 грн |
| 500+ | 4.47 грн |
| 1000+ | 3.11 грн |
| MMSZ5252C-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: DIODE ZENER 24V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.77 грн |
| 6000+ | 2.47 грн |
| 9000+ | 2.12 грн |
| MMSZ5252C-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: DIODE ZENER 24V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
на замовлення 103112 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.57 грн |
| 20+ | 15.51 грн |
| 100+ | 7.56 грн |
| 500+ | 5.91 грн |
| 1000+ | 4.11 грн |
| BZX384B51-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 200MW SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 51V 200MW SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.17 грн |
| 6000+ | 2.73 грн |
| 9000+ | 2.57 грн |
| 15000+ | 1.69 грн |
| 21000+ | 1.68 грн |
| BZX384B51-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 200MW SOD323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Description: DIODE ZENER 51V 200MW SOD323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
на замовлення 23595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.21 грн |
| 44+ | 6.88 грн |
| 100+ | 3.33 грн |
| 500+ | 3.00 грн |
| 1000+ | 2.87 грн |
| 1.5KE43CAHE3_B/C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36.8VWM 59.3VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36.8VWM 59.3VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2800 шт
В кошику
од. на суму грн.
| MBRB745HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MBRB745-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MBRB745-M3C/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| VS-30MQ040HM3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| VS-30MQ040HM3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 3A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 4183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.92 грн |
| 11+ | 27.69 грн |
| 100+ | 16.57 грн |
| 500+ | 14.40 грн |
| 1000+ | 9.79 грн |
| 2000+ | 9.02 грн |
| VS-30WQ04FNTRL-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 17.17 грн |
| 6000+ | 15.67 грн |


















