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MCT06030D7159BPW00 MCT06030D7159BPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030E7159BP100 MCT06030E7159BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030E7159BP500 MCT06030E7159BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030E7159BPW00 MCT06030E7159BPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030F7159BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030F7159BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030F7159BPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MD7159BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MD7159BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MD7159BPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603ME7159BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603ME7159BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603ME7159BPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MF7159BP100 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MF7159BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MF7159BPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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SI8424CDB-T1-E1 VISHAY si8424cdb.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 20mΩ
Power dissipation: 1.8W
Gate-source voltage: ±5V
Drain-source voltage: 8V
Drain current: 10A
Pulsed drain current: 25A
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GBPC3506W-E4/51 GBPC3506W-E4/51 VISHAY gbpc12.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
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GBPC3508-E4/51 GBPC3508-E4/51 VISHAY GBPC3506-E4-51.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
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GBPC3506-E4/51 GBPC3506-E4/51 VISHAY GBPC3506-E4-51.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
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GBPC3504W-E4/51 VISHAY gbpc12.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
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1N5242B-TR VISHAY 1n5221.pdf Category: THT Zener diodes
Description: Diode: Zener; 500mW; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 20000 шт:
термін постачання 14-30 дні (днів)
20000+2.47 грн
Мінімальне замовлення: 20000
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1N5246B-TR VISHAY 1n5221.pdf Category: THT Zener diodes
Description: Diode: Zener; 500mW; 16V; DO35
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
на замовлення 20000 шт:
термін постачання 14-30 дні (днів)
20000+2.47 грн
Мінімальне замовлення: 20000
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P600M-E3/54 P600M-E3/54 VISHAY p600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; 13 inch reel; Ifsm: 400A; P600
Mounting: THT
Quantity in set/package: 800pcs.
Kind of package: 13 inch reel
Max. off-state voltage: 1kV
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 2.5µs
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 0.4kA
на замовлення 975 шт:
термін постачання 14-30 дні (днів)
10+47.90 грн
11+39.19 грн
50+33.32 грн
100+30.72 грн
250+27.53 грн
500+25.09 грн
800+23.50 грн
Мінімальне замовлення: 10
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BAS386-TR BAS386-TR VISHAY BAS386-TR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 8pF
Case: MicroMELF
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 9984 шт:
термін постачання 14-30 дні (днів)
28+16.27 грн
37+11.50 грн
100+7.75 грн
500+5.87 грн
1000+5.24 грн
2500+4.52 грн
5000+4.07 грн
7500+3.84 грн
Мінімальне замовлення: 28
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BAS385-TR BAS385-TR VISHAY bas385.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 10pF
Case: MicroMELF
Leakage current: 2.3µA
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 9708 шт:
термін постачання 14-30 дні (днів)
20+22.60 грн
35+12.34 грн
55+7.67 грн
100+6.41 грн
500+4.63 грн
1000+4.20 грн
1300+4.06 грн
2500+3.79 грн
5000+3.59 грн
Мінімальне замовлення: 20
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BAS383-TR BAS383-TR VISHAY bas381.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Capacitance: 1.6pF
Case: MicroMELF
Leakage current: 0.2µA
Max. forward impulse current: 0.5A
Load current: 30mA
Max. load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 1610 шт:
термін постачання 14-30 дні (днів)
105+4.38 грн
115+3.65 грн
500+3.23 грн
Мінімальне замовлення: 105
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MSS2P3-M3/89A MSS2P3-M3/89A VISHAY mss2p3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO219AD; SMD; 30V; 2A; 7 inch reel
Type of diode: Schottky switching
Case: DO219AD
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
на замовлення 4184 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
81+5.20 грн
85+4.95 грн
100+4.45 грн
Мінімальне замовлення: 63
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MSS2P2HM3_A/H VISHAY mss2p3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
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MSS2P3HM3_A/H VISHAY mss2p3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
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VS-42CTQ030S-M3 VS-42CTQ030S-M3 VISHAY vs-42ctq030x.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. load current: 40A
Max. forward impulse current: 360A
на замовлення 2082 шт:
термін постачання 14-30 дні (днів)
5+103.04 грн
10+85.60 грн
50+82.25 грн
Мінімальне замовлення: 5
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VS-42CTQ030STRR-M3 VISHAY vs-42ctq030s-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-42CTQ030SHM3 VISHAY vs-42ctq030shm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
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VS-42CTQ030STRL-M3 VISHAY vs-42ctq030s-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-42CTQ030STRLHM3 VISHAY vs-42ctq030shm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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В кошику  од. на суму  грн.
VS-42CTQ030STRRHM3 VISHAY vs-42ctq030shm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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IRFDC20PBF VISHAY sihfdc20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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SI2308CDS-T1-GE3 SI2308CDS-T1-GE3 VISHAY si2308cds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 10467 шт:
термін постачання 14-30 дні (днів)
14+34.35 грн
21+20.81 грн
100+12.00 грн
500+8.73 грн
1000+8.39 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 VISHAY SI2307CDS-T1-GE3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 5123 шт:
термін постачання 14-30 дні (днів)
16+29.83 грн
22+19.81 грн
50+15.11 грн
100+13.60 грн
500+11.16 грн
1000+10.41 грн
3000+9.57 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
10+49.71 грн
17+26.02 грн
50+19.81 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI2304DDS-T1-GE3 SI2304DDS-T1-GE3 VISHAY SI2304DDS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2519 шт:
термін постачання 14-30 дні (днів)
13+36.15 грн
19+22.58 грн
100+13.68 грн
500+9.99 грн
1000+8.81 грн
1500+8.22 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SI2306BDS-T1-E3 SI2306BDS-T1-E3 VISHAY SI2306BDS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1731 шт:
термін постачання 14-30 дні (днів)
10+47.90 грн
13+33.82 грн
50+24.93 грн
100+21.99 грн
500+20.90 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI2308BDS-T1-E3 SI2308BDS-T1-E3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
7+64.17 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SI2307BDS-T1-E3 SI2307BDS-T1-E3 VISHAY si2307bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 VISHAY si2304bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 1.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
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SI2306BDS-T1-GE3 VISHAY si2306bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SI2303CDS-T1-BE3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SI2303CDS-T1-E3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SI2304BDS-T1-E3 VISHAY si2304bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: TrenchFET®
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MAL205857472E3 MAL205857472E3 VISHAY 058059pll-si.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Operating temperature: -40...105°C
Capacitance: 4.7mF
Terminal pitch: 10mm
Height: 30mm
Diameter: 30mm
Body dimensions: Ø30x30mm
Tolerance: ±20%
Operating voltage: 40V DC
Service life: 5000h
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
1+482.64 грн
5+409.56 грн
10+389.42 грн
25+376.83 грн
50+365.92 грн
100+362.56 грн
В кошику  од. на суму  грн.
6N139 6N139 VISHAY 6N139-VIS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
CTR@If: 2000%@1.6mA
Collector-emitter voltage: 7V
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
на замовлення 714 шт:
термін постачання 14-30 дні (днів)
5+102.13 грн
10+56.73 грн
25+48.51 грн
50+44.48 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCS0402MD1691BE000 VISHAY Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
10000+3.00 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 VISHAY si4936cdy-t1-e3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 2715 шт:
термін постачання 14-30 дні (днів)
7+65.08 грн
10+43.98 грн
50+30.55 грн
100+26.19 грн
500+23.25 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SI4925BDY-T1-E3 SI4925BDY-T1-E3 VISHAY SI4925BDY-T1-E3.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Drain current: -5.7A
Gate charge: 50nC
Type of transistor: P-MOSFET x2
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4909DY-T1-GE3 SI4909DY-T1-GE3 VISHAY si4909dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -40V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -6.4A
Gate charge: 63nC
Type of transistor: P-MOSFET
On-state resistance: 27mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4946CDY-T1-GE3 VISHAY si4946cdy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 25A
Drain current: 6.1A
Gate charge: 10nC
Type of transistor: N-MOSFET x2
On-state resistance: 51.6mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4931DY-T1-GE3 VISHAY si4931dy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4932DY-T1-GE3 VISHAY si4932dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 8A
Gate charge: 48nC
Type of transistor: N-MOSFET x2
On-state resistance: 17mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-E3 VISHAY si4963bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-E3 VISHAY si4900dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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MCT06030D7159BPW00
MCT06030D7159BPW00
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030E7159BP100
MCT06030E7159BP100
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030E7159BP500
MCT06030E7159BP500
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030E7159BPW00
MCT06030E7159BPW00
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030F7159BP100
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030F7159BP500
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT06030F7159BPW00
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MD7159BP100
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MD7159BP500
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MD7159BPW00
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603ME7159BP100
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603ME7159BP500
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603ME7159BPW00
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MF7159BP100
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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MCT0603MF7159BP500
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
товару немає в наявності
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MCT0603MF7159BPW00
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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SI8424CDB-T1-E1 si8424cdb.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 20mΩ
Power dissipation: 1.8W
Gate-source voltage: ±5V
Drain-source voltage: 8V
Drain current: 10A
Pulsed drain current: 25A
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GBPC3506W-E4/51 gbpc12.pdf
GBPC3506W-E4/51
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
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GBPC3508-E4/51 GBPC3506-E4-51.pdf
GBPC3508-E4/51
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
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GBPC3506-E4/51 GBPC3506-E4-51.pdf
GBPC3506-E4/51
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
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GBPC3504W-E4/51 gbpc12.pdf
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
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1N5242B-TR 1n5221.pdf
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 20000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20000+2.47 грн
Мінімальне замовлення: 20000
В кошику  од. на суму  грн.
1N5246B-TR 1n5221.pdf
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 16V; DO35
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
на замовлення 20000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20000+2.47 грн
Мінімальне замовлення: 20000
В кошику  од. на суму  грн.
P600M-E3/54 p600.pdf
P600M-E3/54
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; 13 inch reel; Ifsm: 400A; P600
Mounting: THT
Quantity in set/package: 800pcs.
Kind of package: 13 inch reel
Max. off-state voltage: 1kV
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 2.5µs
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 0.4kA
на замовлення 975 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+47.90 грн
11+39.19 грн
50+33.32 грн
100+30.72 грн
250+27.53 грн
500+25.09 грн
800+23.50 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BAS386-TR BAS386-TR.pdf
BAS386-TR
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 8pF
Case: MicroMELF
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 9984 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.27 грн
37+11.50 грн
100+7.75 грн
500+5.87 грн
1000+5.24 грн
2500+4.52 грн
5000+4.07 грн
7500+3.84 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAS385-TR bas385.pdf
BAS385-TR
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 10pF
Case: MicroMELF
Leakage current: 2.3µA
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 9708 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.60 грн
35+12.34 грн
55+7.67 грн
100+6.41 грн
500+4.63 грн
1000+4.20 грн
1300+4.06 грн
2500+3.79 грн
5000+3.59 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BAS383-TR bas381.pdf
BAS383-TR
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Capacitance: 1.6pF
Case: MicroMELF
Leakage current: 0.2µA
Max. forward impulse current: 0.5A
Load current: 30mA
Max. load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 1610 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
105+4.38 грн
115+3.65 грн
500+3.23 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
MSS2P3-M3/89A mss2p3.pdf
MSS2P3-M3/89A
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO219AD; SMD; 30V; 2A; 7 inch reel
Type of diode: Schottky switching
Case: DO219AD
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
на замовлення 4184 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.23 грн
81+5.20 грн
85+4.95 грн
100+4.45 грн
Мінімальне замовлення: 63
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MSS2P2HM3_A/H mss2p3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
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MSS2P3HM3_A/H mss2p3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
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VS-42CTQ030S-M3 vs-42ctq030x.pdf
VS-42CTQ030S-M3
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. load current: 40A
Max. forward impulse current: 360A
на замовлення 2082 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+103.04 грн
10+85.60 грн
50+82.25 грн
Мінімальне замовлення: 5
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VS-42CTQ030STRR-M3 vs-42ctq030s-m3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-42CTQ030SHM3 vs-42ctq030shm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
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VS-42CTQ030STRL-M3 vs-42ctq030s-m3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-42CTQ030STRLHM3 vs-42ctq030shm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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VS-42CTQ030STRRHM3 vs-42ctq030shm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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IRFDC20PBF sihfdc20.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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SI2308CDS-T1-GE3 si2308cds.pdf
SI2308CDS-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 10467 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.35 грн
21+20.81 грн
100+12.00 грн
500+8.73 грн
1000+8.39 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3.pdf
SI2307CDS-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 5123 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.83 грн
22+19.81 грн
50+15.11 грн
100+13.60 грн
500+11.16 грн
1000+10.41 грн
3000+9.57 грн
Мінімальне замовлення: 16
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SI2303CDS-T1-GE3 si2303cd.pdf
SI2303CDS-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+49.71 грн
17+26.02 грн
50+19.81 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI2304DDS-T1-GE3 SI2304DDS.pdf
SI2304DDS-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2519 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+36.15 грн
19+22.58 грн
100+13.68 грн
500+9.99 грн
1000+8.81 грн
1500+8.22 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SI2306BDS-T1-E3 SI2306BDS.pdf
SI2306BDS-T1-E3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1731 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+47.90 грн
13+33.82 грн
50+24.93 грн
100+21.99 грн
500+20.90 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI2308BDS-T1-E3
SI2308BDS-T1-E3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+64.17 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SI2307BDS-T1-E3 si2307bd.pdf
SI2307BDS-T1-E3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI2304BDS-T1-GE3 si2304bds.pdf
SI2304BDS-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 1.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
товару немає в наявності
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SI2306BDS-T1-GE3 si2306bd.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
В кошику  од. на суму  грн.
SI2303CDS-T1-BE3 si2303cd.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
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SI2303CDS-T1-E3 si2303cd.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
В кошику  од. на суму  грн.
SI2304BDS-T1-E3 si2304bds.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: TrenchFET®
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MAL205857472E3 058059pll-si.pdf
MAL205857472E3
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Operating temperature: -40...105°C
Capacitance: 4.7mF
Terminal pitch: 10mm
Height: 30mm
Diameter: 30mm
Body dimensions: Ø30x30mm
Tolerance: ±20%
Operating voltage: 40V DC
Service life: 5000h
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+482.64 грн
5+409.56 грн
10+389.42 грн
25+376.83 грн
50+365.92 грн
100+362.56 грн
В кошику  од. на суму  грн.
6N139 6N139-VIS.pdf
6N139
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
CTR@If: 2000%@1.6mA
Collector-emitter voltage: 7V
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
на замовлення 714 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+102.13 грн
10+56.73 грн
25+48.51 грн
50+44.48 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCS0402MD1691BE000
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10000+3.00 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SI4936CDY-T1-GE3 si4936cdy-t1-e3.pdf
SI4936CDY-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 2715 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+65.08 грн
10+43.98 грн
50+30.55 грн
100+26.19 грн
500+23.25 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SI4925BDY-T1-E3 SI4925BDY-T1-E3.pdf
SI4925BDY-T1-E3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Drain current: -5.7A
Gate charge: 50nC
Type of transistor: P-MOSFET x2
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -40V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -6.4A
Gate charge: 63nC
Type of transistor: P-MOSFET
On-state resistance: 27mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
В кошику  од. на суму  грн.
SI4946CDY-T1-GE3 si4946cdy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 25A
Drain current: 6.1A
Gate charge: 10nC
Type of transistor: N-MOSFET x2
On-state resistance: 51.6mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4931DY-T1-GE3 si4931dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4932DY-T1-GE3 si4932dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 8A
Gate charge: 48nC
Type of transistor: N-MOSFET x2
On-state resistance: 17mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-E3 si4963bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-E3 si4900dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
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