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SI2304BDS-T1-E3 VISHAY si2304bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: TrenchFET®
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MAL205857472E3 MAL205857472E3 VISHAY 058059pll-si.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Operating temperature: -40...105°C
Capacitance: 4.7mF
Terminal pitch: 10mm
Height: 30mm
Diameter: 30mm
Body dimensions: Ø30x30mm
Tolerance: ±20%
Operating voltage: 40V DC
Service life: 5000h
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
1+482.64 грн
5+409.56 грн
10+389.42 грн
25+376.83 грн
50+365.92 грн
100+362.56 грн
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6N139 6N139 VISHAY 6N139-VIS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
CTR@If: 2000%@1.6mA
Collector-emitter voltage: 7V
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
на замовлення 714 шт:
термін постачання 14-30 дні (днів)
5+102.13 грн
10+56.73 грн
25+48.51 грн
50+44.48 грн
Мінімальне замовлення: 5
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MCS0402MD1691BE000 VISHAY Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
10000+3.00 грн
Мінімальне замовлення: 10000
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SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 VISHAY si4936cdy-t1-e3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 2715 шт:
термін постачання 14-30 дні (днів)
7+65.08 грн
10+43.98 грн
50+30.55 грн
100+26.19 грн
500+23.25 грн
Мінімальне замовлення: 7
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SI4925BDY-T1-E3 SI4925BDY-T1-E3 VISHAY SI4925BDY-T1-E3.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Drain current: -5.7A
Gate charge: 50nC
Type of transistor: P-MOSFET x2
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4909DY-T1-GE3 SI4909DY-T1-GE3 VISHAY si4909dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -40V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -6.4A
Gate charge: 63nC
Type of transistor: P-MOSFET
On-state resistance: 27mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4946CDY-T1-GE3 VISHAY si4946cdy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 25A
Drain current: 6.1A
Gate charge: 10nC
Type of transistor: N-MOSFET x2
On-state resistance: 51.6mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4931DY-T1-GE3 VISHAY si4931dy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4932DY-T1-GE3 VISHAY si4932dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 8A
Gate charge: 48nC
Type of transistor: N-MOSFET x2
On-state resistance: 17mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-E3 VISHAY si4963bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-E3 VISHAY si4900dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-GE3 VISHAY si4900dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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Si4904DY-T1-E3 VISHAY si4904dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4904DY-T1-GE3 VISHAY si4904dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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Si4922BDY-T1-E3 VISHAY si4922bd.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4922BDY-T1-GE3 VISHAY si4922bd.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4931DY-T1-E3 VISHAY si4931dy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4936BDY-T1-E3 VISHAY Si4936BDY.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 6.9A
Gate charge: 15nC
Type of transistor: N-MOSFET x2
On-state resistance: 51mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943BDY-T1-E3 VISHAY si4943bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.4A
Gate charge: 25nC
Type of transistor: P-MOSFET x2
On-state resistance: 31mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943CDY-T1-E3 VISHAY si4943cdy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8A
Gate charge: 62nC
Type of transistor: P-MOSFET x2
On-state resistance: 33mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943CDY-T1-GE3 VISHAY si4943cdy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8A
Gate charge: 62nC
Type of transistor: P-MOSFET x2
On-state resistance: 33mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-GE3 VISHAY si4963bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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MCT06030C1740DPW00 MCT06030C1740DPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 174Ω; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 174Ω
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
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GBU4K-E3/45 GBU4K-E3/45 VISHAY gbu4a.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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CRCW0402499RFKED CRCW0402499RFKED VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 0.063W; ±1%; 50V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
3+150.94 грн
Мінімальне замовлення: 3
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SMM02040C2499FB300 SMM02040C2499FB300 VISHAY VISHAY_smm0204.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; MiniMELF; 0204; 24.9Ω; 0.4W; ±1%; 200V
Diameter: 1.5mm
Case: MiniMELF
Mounting: SMD
Type of resistor: thin film
Operating temperature: -55...155°C
Body dimensions: Ø1.5x3.6mm
Length: 3.6mm
Power: 0.4W
Tolerance: ±1%
Resistance: 24.9Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 200V
Case - inch: 0204
Case - mm: 0510
на замовлення 475 шт:
термін постачання 14-30 дні (днів)
100+4.74 грн
125+3.43 грн
250+2.95 грн
Мінімальне замовлення: 100
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CRCW0402499RFKTDBC CRCW0402499RFKTDBC VISHAY Data+Sheet+CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 63mW; ±1%; 50V; 1x0.5x0.35mm
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Quantity in set/package: 10000pcs.
Case - inch: 0402
Case - mm: 1005
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CRCW2512499KFKEG CRCW2512499KFKEG VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499kΩ; 1W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1W
Tolerance: ±1%
Resistance: 499kΩ
Temperature coefficient: 100ppm/°C
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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CRCW2512499RFKEGHP CRCW2512499RFKEGHP VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499Ω; 1.5W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1.5W
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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CRCW0402499RFKTD CRCW0402499RFKTD VISHAY 72.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 63mW; ±1%; 50V; 1x0.5x0.35mm
Conform to the norm: AEC-Q200
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Roll diameter max.: 180mm
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Quantity in set/package: 10000pcs.
Case - inch: 0402
Case - mm: 1005
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CRCW2512499RFKEG CRCW2512499RFKEG VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499Ω; 1W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1W
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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RCA0402499KFKED RCA0402499KFKED VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0402; 499kΩ; 63mW; ±1%; 50V; -55÷155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499kΩ
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
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RCA0402499RFKED RCA0402499RFKED VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0402; 499Ω; 63mW; ±1%; 50V; -55÷155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
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MCT06030F6121BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 6.12kΩ; 0.125W; ±0.1%; MCT0603; 0
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 6.12kΩ
Power: 0.125W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 10ppm/°C
Roll diameter max.: 180mm
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VS-70MT160PAPBF VS-70MT160PAPBF VISHAY vs-40mt160ppbf_70_100_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 75A; Ifsm: 380A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 75A
Max. forward impulse current: 380A
Electrical mounting: Press-in PCB
Leads: flat pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+3260.09 грн
В кошику  од. на суму  грн.
VS-40MT160PBPBF VS-40MT160PBPBF VISHAY vs-xxxMT160Px.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 270A
Electrical mounting: Press-in PCB
Leads: round pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+3759.91 грн
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TCMT1600T3 VISHAY tcmt1600.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: SOP4
Turn-on time: 9µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 80-300%@5mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Manufacturer series: TCMT1600
Kind of output: transistor
Conform to the norm: UL; VDE
Turn-off time: 18µs
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VS-70MT160PBPBF VISHAY vs-40mt160ppbf_70_100_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 75A; Ifsm: 380A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 75A
Max. forward impulse current: 380A
Electrical mounting: Press-in PCB
Leads: round pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
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VS-70MT160P-P VISHAY vs-40mt160p-p_70_100_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 75A; Ifsm: 380A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 75A
Max. forward impulse current: 380A
Electrical mounting: Press-in PCB
Case: MTP pressfit
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
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VS-40MT160KPBF VISHAY vs-40mt160k.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 270A
Electrical mounting: screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.02V
Kind of package: bulk
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VS-51MT160KPBF VISHAY vs-5.mt.KPbF_9.mt_11.mt.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 55A; MTK; bulk
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 390A
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.68V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.17V
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VS-60MT160KPBF VISHAY vs-60mtXXkpbf_70_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 420A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 420A
Electrical mounting: screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.75V
Kind of package: bulk
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VS-91MT160KPBF VISHAY vs-5.mt.KPbF_9.mt_11.mt.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 90A; MTK; bulk
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 0.95kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.65V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.09V
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VS-40MT160P-P VISHAY vs-40mt160p-p_70_100_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 45A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 270A
Electrical mounting: Press-in PCB
Case: MTP pressfit
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
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VS-40MT160PAPBF VISHAY vs-40mt160ppbf_70_100_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 45A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 270A
Electrical mounting: Press-in PCB
Leads: flat pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
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VS-52MT160KPBF VISHAY vs-5.mt.KPbF_9.mt_11.mt.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 55A; MTK; bulk
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 390A
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.68V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.17V
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VS-53MT160KPBF VISHAY vs-5.mt.KPbF_9.mt_11.mt.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: full-controlled; Urmax: 1.6kV; If: 55A; MTK; bulk
Type of bridge rectifier: full-controlled
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 390A
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.68V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.17V
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VS-70MT160KPBF VISHAY vs-60mtXXkpbf_70_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 70A; Ifsm: 480A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 70A
Max. forward impulse current: 0.48kA
Electrical mounting: screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.55V
Kind of package: bulk
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VS-92MT160KPBF VISHAY vs-5.mt.KPbF_9.mt_11.mt.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 90A; MTK; bulk
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 0.95kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.65V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.09V
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VS-93MT160KPBF VISHAY vs-5.mt.KPbF_9.mt_11.mt.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: full-controlled; Urmax: 1.6kV; If: 90A; MTK; bulk
Type of bridge rectifier: full-controlled
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 0.95kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.65V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.09V
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VS-300MT160C VS-300MT160C VISHAY VS-300MT160C.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 300A; Ifsm: 2.4kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Leads: M6 screws
Case: MTC
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.7V
Kind of package: bulk
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VS-104MT160KPBF VISHAY vs-104mtXXkpbf_ser.pdf Category: Thyristor modules
Description: Module: thyristor; opposing x3; 1.6kV; 100A; MTK; Ufmax: 1.53V
Max. off-state voltage: 1.6kV
Load current: 100A
Max. forward impulse current: 1.13kA
Electrical mounting: FASTON connectors; screw
Case: MTK
Mechanical mounting: screw
Max. forward voltage: 1.53V
Gate current: 150mA
Threshold on-voltage: 0.99V
Type of semiconductor module: thyristor
Semiconductor structure: opposing x3
Manufacturer series: VS-104MTxxKPbF
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VS-100MT160PBPBF VISHAY vs-40mt160ppbf_70_100_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 100A; Ifsm: 450A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 100A
Max. forward impulse current: 0.45kA
Electrical mounting: Press-in PCB
Leads: round pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.51V
Kind of package: bulk
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VS-100MT160PAPBF VISHAY vs-xxxMT160Px.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 100A; Ifsm: 450A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 100A
Max. forward impulse current: 0.45kA
Electrical mounting: Press-in PCB
Leads: flat pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.51V
Kind of package: bulk
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VS-131MT160C VISHAY vs-131mt_c_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.27kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.27kA
Electrical mounting: screw
Leads: M6 screws
Case: MTC
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.05V
Kind of package: bulk
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VS-100MT160P-P VISHAY vs-40mt160p-p_70_100_ser.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 100A; Ifsm: 450A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 100A
Max. forward impulse current: 0.45kA
Electrical mounting: Press-in PCB
Case: MTP pressfit
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.51V
Kind of package: bulk
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VS-110MT160KPBF VISHAY vs-90MTxxK_vs-110MTxxK.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 110A; Ifsm: 950A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 110A
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.4V
Kind of package: bulk
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VS-112MT160KPBF VISHAY vs-5.mt.KPbF_9.mt_11.mt.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 110A; MTK
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 110A
Max. forward impulse current: 1.13kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.57V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.04V
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VS-111MT160KPBF VISHAY vs-5.mt.KPbF_9.mt_11.mt.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 110A; MTK
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 110A
Max. forward impulse current: 1.13kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.57V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.04V
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SI2304BDS-T1-E3 si2304bds.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: TrenchFET®
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MAL205857472E3 058059pll-si.pdf
MAL205857472E3
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Operating temperature: -40...105°C
Capacitance: 4.7mF
Terminal pitch: 10mm
Height: 30mm
Diameter: 30mm
Body dimensions: Ø30x30mm
Tolerance: ±20%
Operating voltage: 40V DC
Service life: 5000h
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+482.64 грн
5+409.56 грн
10+389.42 грн
25+376.83 грн
50+365.92 грн
100+362.56 грн
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6N139 6N139-VIS.pdf
6N139
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
CTR@If: 2000%@1.6mA
Collector-emitter voltage: 7V
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
на замовлення 714 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+102.13 грн
10+56.73 грн
25+48.51 грн
50+44.48 грн
Мінімальне замовлення: 5
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MCS0402MD1691BE000
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10000+3.00 грн
Мінімальне замовлення: 10000
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SI4936CDY-T1-GE3 si4936cdy-t1-e3.pdf
SI4936CDY-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 2715 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+65.08 грн
10+43.98 грн
50+30.55 грн
100+26.19 грн
500+23.25 грн
Мінімальне замовлення: 7
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SI4925BDY-T1-E3 SI4925BDY-T1-E3.pdf
SI4925BDY-T1-E3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Drain current: -5.7A
Gate charge: 50nC
Type of transistor: P-MOSFET x2
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -40V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -6.4A
Gate charge: 63nC
Type of transistor: P-MOSFET
On-state resistance: 27mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4946CDY-T1-GE3 si4946cdy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 25A
Drain current: 6.1A
Gate charge: 10nC
Type of transistor: N-MOSFET x2
On-state resistance: 51.6mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4931DY-T1-GE3 si4931dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4932DY-T1-GE3 si4932dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 8A
Gate charge: 48nC
Type of transistor: N-MOSFET x2
On-state resistance: 17mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-E3 si4963bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-E3 si4900dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-GE3 si4900dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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Si4904DY-T1-E3 si4904dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4904DY-T1-GE3 si4904dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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Si4922BDY-T1-E3 si4922bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4922BDY-T1-GE3 si4922bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4931DY-T1-E3 si4931dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4936BDY-T1-E3 Si4936BDY.PDF
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 6.9A
Gate charge: 15nC
Type of transistor: N-MOSFET x2
On-state resistance: 51mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943BDY-T1-E3 si4943bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.4A
Gate charge: 25nC
Type of transistor: P-MOSFET x2
On-state resistance: 31mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943CDY-T1-E3 si4943cdy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8A
Gate charge: 62nC
Type of transistor: P-MOSFET x2
On-state resistance: 33mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943CDY-T1-GE3 si4943cdy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8A
Gate charge: 62nC
Type of transistor: P-MOSFET x2
On-state resistance: 33mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-GE3 si4963bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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MCT06030C1740DPW00
MCT06030C1740DPW00
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 174Ω; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 174Ω
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
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GBU4K-E3/45 gbu4a.pdf
GBU4K-E3/45
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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CRCW0402499RFKED dcrcwe3.pdf
CRCW0402499RFKED
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 0.063W; ±1%; 50V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+150.94 грн
Мінімальне замовлення: 3
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SMM02040C2499FB300 VISHAY_smm0204.pdf
SMM02040C2499FB300
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; MiniMELF; 0204; 24.9Ω; 0.4W; ±1%; 200V
Diameter: 1.5mm
Case: MiniMELF
Mounting: SMD
Type of resistor: thin film
Operating temperature: -55...155°C
Body dimensions: Ø1.5x3.6mm
Length: 3.6mm
Power: 0.4W
Tolerance: ±1%
Resistance: 24.9Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 200V
Case - inch: 0204
Case - mm: 0510
на замовлення 475 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
100+4.74 грн
125+3.43 грн
250+2.95 грн
Мінімальне замовлення: 100
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CRCW0402499RFKTDBC Data+Sheet+CRCW_BCe3.pdf
CRCW0402499RFKTDBC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 63mW; ±1%; 50V; 1x0.5x0.35mm
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Quantity in set/package: 10000pcs.
Case - inch: 0402
Case - mm: 1005
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CRCW2512499KFKEG CRCW.pdf
CRCW2512499KFKEG
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499kΩ; 1W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1W
Tolerance: ±1%
Resistance: 499kΩ
Temperature coefficient: 100ppm/°C
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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CRCW2512499RFKEGHP CRCW.pdf
CRCW2512499RFKEGHP
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499Ω; 1.5W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1.5W
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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CRCW0402499RFKTD 72.pdf
CRCW0402499RFKTD
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 63mW; ±1%; 50V; 1x0.5x0.35mm
Conform to the norm: AEC-Q200
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Roll diameter max.: 180mm
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Quantity in set/package: 10000pcs.
Case - inch: 0402
Case - mm: 1005
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CRCW2512499RFKEG CRCW.pdf
CRCW2512499RFKEG
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499Ω; 1W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1W
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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RCA0402499KFKED rcae3.pdf
RCA0402499KFKED
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 499kΩ; 63mW; ±1%; 50V; -55÷155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499kΩ
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
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RCA0402499RFKED rcae3.pdf
RCA0402499RFKED
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 499Ω; 63mW; ±1%; 50V; -55÷155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
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MCT06030F6121BP500
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 6.12kΩ; 0.125W; ±0.1%; MCT0603; 0
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 6.12kΩ
Power: 0.125W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 10ppm/°C
Roll diameter max.: 180mm
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VS-70MT160PAPBF vs-40mt160ppbf_70_100_ser.pdf
VS-70MT160PAPBF
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 75A; Ifsm: 380A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 75A
Max. forward impulse current: 380A
Electrical mounting: Press-in PCB
Leads: flat pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+3260.09 грн
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VS-40MT160PBPBF vs-xxxMT160Px.pdf
VS-40MT160PBPBF
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 270A
Electrical mounting: Press-in PCB
Leads: round pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+3759.91 грн
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TCMT1600T3 tcmt1600.pdf
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: SOP4
Turn-on time: 9µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 80-300%@5mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Manufacturer series: TCMT1600
Kind of output: transistor
Conform to the norm: UL; VDE
Turn-off time: 18µs
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VS-70MT160PBPBF vs-40mt160ppbf_70_100_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 75A; Ifsm: 380A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 75A
Max. forward impulse current: 380A
Electrical mounting: Press-in PCB
Leads: round pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
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VS-70MT160P-P vs-40mt160p-p_70_100_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 75A; Ifsm: 380A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 75A
Max. forward impulse current: 380A
Electrical mounting: Press-in PCB
Case: MTP pressfit
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
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VS-40MT160KPBF vs-40mt160k.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 270A
Electrical mounting: screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.02V
Kind of package: bulk
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VS-51MT160KPBF vs-5.mt.KPbF_9.mt_11.mt.pdf
Виробник: VISHAY
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 55A; MTK; bulk
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 390A
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.68V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.17V
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VS-60MT160KPBF vs-60mtXXkpbf_70_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 420A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 420A
Electrical mounting: screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.75V
Kind of package: bulk
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VS-91MT160KPBF vs-5.mt.KPbF_9.mt_11.mt.pdf
Виробник: VISHAY
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 90A; MTK; bulk
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 0.95kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.65V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.09V
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VS-40MT160P-P vs-40mt160p-p_70_100_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 45A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 270A
Electrical mounting: Press-in PCB
Case: MTP pressfit
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
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VS-40MT160PAPBF vs-40mt160ppbf_70_100_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 45A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 270A
Electrical mounting: Press-in PCB
Leads: flat pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.45V
Kind of package: bulk
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VS-52MT160KPBF vs-5.mt.KPbF_9.mt_11.mt.pdf
Виробник: VISHAY
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 55A; MTK; bulk
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 390A
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.68V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.17V
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VS-53MT160KPBF vs-5.mt.KPbF_9.mt_11.mt.pdf
Виробник: VISHAY
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: full-controlled; Urmax: 1.6kV; If: 55A; MTK; bulk
Type of bridge rectifier: full-controlled
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 390A
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.68V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.17V
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VS-70MT160KPBF vs-60mtXXkpbf_70_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 70A; Ifsm: 480A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 70A
Max. forward impulse current: 0.48kA
Electrical mounting: screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.55V
Kind of package: bulk
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VS-92MT160KPBF vs-5.mt.KPbF_9.mt_11.mt.pdf
Виробник: VISHAY
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 90A; MTK; bulk
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 0.95kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.65V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.09V
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VS-93MT160KPBF vs-5.mt.KPbF_9.mt_11.mt.pdf
Виробник: VISHAY
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: full-controlled; Urmax: 1.6kV; If: 90A; MTK; bulk
Type of bridge rectifier: full-controlled
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 0.95kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.65V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.09V
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VS-300MT160C VS-300MT160C.pdf
VS-300MT160C
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 300A; Ifsm: 2.4kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 300A
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Leads: M6 screws
Case: MTC
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.7V
Kind of package: bulk
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VS-104MT160KPBF vs-104mtXXkpbf_ser.pdf
Виробник: VISHAY
Category: Thyristor modules
Description: Module: thyristor; opposing x3; 1.6kV; 100A; MTK; Ufmax: 1.53V
Max. off-state voltage: 1.6kV
Load current: 100A
Max. forward impulse current: 1.13kA
Electrical mounting: FASTON connectors; screw
Case: MTK
Mechanical mounting: screw
Max. forward voltage: 1.53V
Gate current: 150mA
Threshold on-voltage: 0.99V
Type of semiconductor module: thyristor
Semiconductor structure: opposing x3
Manufacturer series: VS-104MTxxKPbF
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VS-100MT160PBPBF vs-40mt160ppbf_70_100_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 100A; Ifsm: 450A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 100A
Max. forward impulse current: 0.45kA
Electrical mounting: Press-in PCB
Leads: round pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.51V
Kind of package: bulk
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VS-100MT160PAPBF vs-xxxMT160Px.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 100A; Ifsm: 450A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 100A
Max. forward impulse current: 0.45kA
Electrical mounting: Press-in PCB
Leads: flat pin
Case: MTP
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.51V
Kind of package: bulk
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VS-131MT160C vs-131mt_c_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 130A; Ifsm: 1.27kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 130A
Max. forward impulse current: 1.27kA
Electrical mounting: screw
Leads: M6 screws
Case: MTC
Version: module
Mechanical mounting: screw
Max. forward voltage: 2.05V
Kind of package: bulk
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VS-100MT160P-P vs-40mt160p-p_70_100_ser.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 100A; Ifsm: 450A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 100A
Max. forward impulse current: 0.45kA
Electrical mounting: Press-in PCB
Case: MTP pressfit
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.51V
Kind of package: bulk
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VS-110MT160KPBF vs-90MTxxK_vs-110MTxxK.pdf
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 110A; Ifsm: 950A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 110A
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.4V
Kind of package: bulk
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VS-112MT160KPBF vs-5.mt.KPbF_9.mt_11.mt.pdf
Виробник: VISHAY
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 110A; MTK
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 110A
Max. forward impulse current: 1.13kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.57V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.04V
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VS-111MT160KPBF vs-5.mt.KPbF_9.mt_11.mt.pdf
Виробник: VISHAY
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 110A; MTK
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 110A
Max. forward impulse current: 1.13kA
Electrical mounting: FASTON connectors; screw
Leads: M5 screws
Case: MTK
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.57V
Gate current: 150mA
Kind of package: bulk
Threshold on-voltage: 1.04V
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