| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1.5KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Technology: TransZorb® Kind of package: 13 inch reel Features of semiconductor devices: glass passivated |
на замовлення 1433 шт: термін постачання 14-30 дні (днів) |
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1.5KE200CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 200V; 5.5A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 1286 шт: термін постачання 14-30 дні (днів) |
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T63YB202KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 2kΩ; 250mW; ±10%; linear; T63YB Resistance: 2kΩ Mounting: THT Operating temperature: -55...155°C Tolerance: ±10% Track material: cermet IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Body dimensions: 6.8x6.8x5mm Terminal pitch: 2.5x2.5mm Power: 0.25W Torque: 1Ncm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Manufacturer series: T63YB |
на замовлення 186 шт: термін постачання 14-30 дні (днів) |
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TS53YL202MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 2kΩ; 250mW; SMD; ±20%; linear Type of potentiometer: mounting Kind of potentiometer: single turn Resistance: 2kΩ Power: 0.25W Mounting: SMD Tolerance: ±20% Temperature coefficient: 100ppm/°C Characteristics: linear Body dimensions: 5x5x2.7mm Track material: cermet Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1.5Ncm IP rating: IP67 Leads: YL Operating temperature: -55...155°C Operating voltage: 200V |
на замовлення 266 шт: термін постачання 14-30 дні (днів) |
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T93YA202KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 2kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YA Track material: cermet Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64W; 67W; 3296W IP rating: IP67 Torque: 1.5Ncm Operating temperature: -55...125°C Operating voltage: 250V |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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CNY17-4 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 6µs Turn-off time: 25µs Manufacturer series: CNY17 CTR@If: 16-32%@10mA |
на замовлення 3986 шт: термін постачання 14-30 дні (днів) |
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SMBJ150CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 167÷185V; 2.5A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 2.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 303 шт: термін постачання 14-30 дні (днів) |
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SMBJ15A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 16.7÷18.5V; 24.6A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 2696 шт: термін постачання 14-30 дні (днів) |
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SMBJ15CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 16.7÷18.5V; 24.6A; bidirectional; ±5%; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 8171 шт: термін постачання 14-30 дні (днів) |
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MAL214097805E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 10uF; 63VDC; 8x8x10mm; ±20% Mounting: SMD Operating temperature: -55...125°C Capacitance: 10µF Body dimensions: 8x8x10mm Tolerance: ±20% Operating voltage: 63V DC Type of capacitor: electrolytic |
на замовлення 356 шт: термін постачання 14-30 дні (днів) |
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BAT54C-G3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.24V Max. load current: 0.3A Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.23W Max. forward impulse current: 0.6A |
на замовлення 2660 шт: термін постачання 14-30 дні (днів) |
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T18504KT10 | VISHAY |
Category: 19mm multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Operating temperature: -55...125°C Potentiometer standard: 19mm Power: 0.75W Tolerance: ±10% Number of electrical turns: 15 ±1 Temperature coefficient: 100ppm/°C Resistance: 500kΩ Min. insulation resistance: 1TΩ Engineering PN: 43P; 89; 3006 Track material: cermet |
на замовлення 75 шт: термін постачання 14-30 дні (днів) |
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MAL214860471E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 470uF; 35VDC; Ø10x16mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 35V DC Terminal pitch: 5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Body dimensions: Ø10x16mm Height: 16mm Diameter: 10mm |
на замовлення 678 шт: термін постачання 14-30 дні (днів) |
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| SIHA17N80AEF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 32A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHA17N80E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 45A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB17N80AE-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 32A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB17N80E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG17N80AE-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 32A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG17N80AEF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 32A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG17N80E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP17N80AEF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 32A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP17N80E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MAL205757331E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø35x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 330µF Operating voltage: 450V DC Body dimensions: Ø35x50mm Tolerance: ±20% Service life: 5000h Operating temperature: -40...85°C Height: 50mm Diameter: 35mm Terminal pitch: 10mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MAL215947331E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø30x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 330µF Operating voltage: 450V DC Body dimensions: Ø30x50mm Tolerance: ±20% Service life: 5000h Operating temperature: -40...105°C Height: 50mm Diameter: 30mm Terminal pitch: 10mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRFP140PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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293D106X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 10µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1411 Case - mm: 3528 Case: B Manufacturer series: Tantamount |
на замовлення 11653 шт: термін постачання 14-30 дні (днів) |
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IRF9540PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Kind of channel: enhancement Gate charge: 61nC Kind of package: tube |
на замовлення 706 шт: термін постачання 14-30 дні (днів) |
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IRF9540SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: tube |
на замовлення 1965 шт: термін постачання 14-30 дні (днів) |
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IRF9540STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV103-GS08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Case: MiniMELF; SOD80 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: 7 inch reel Power dissipation: 0.5W Max. load current: 0.625A Capacitance: 1.5pF Features of semiconductor devices: small signal Quantity in set/package: 2500pcs. |
на замовлення 227154 шт: термін постачання 14-30 дні (днів) |
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NTCS0603E3222FMT | VISHAY |
Category: SMD measurement NTC thermistorsDescription: NTC thermistor; 2.2kΩ; SMD; 0603; 3520K; ±1%; 125mW; -40÷150°C Resistance: 2.2kΩ Tolerance: ±1% Power: 0.125W Mounting: SMD Case - inch: 0603 Operating temperature: -40...150°C Material constant B: 3520K Type of sensor: NTC thermistor |
на замовлення 3755 шт: термін постачання 14-30 дні (днів) |
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NTCS0603E3222JMT | VISHAY |
Category: SMD measurement NTC thermistorsDescription: NTC thermistor; 2.2kΩ; SMD; 0603; 3520K; ±5%; 125mW; -40÷150°C Resistance: 2.2kΩ Tolerance: ±5% Power: 0.125W Mounting: SMD Case - inch: 0603 Operating temperature: -40...150°C Material constant B: 3520K Type of sensor: NTC thermistor |
на замовлення 3047 шт: термін постачання 14-30 дні (днів) |
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CRCW06032K20FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 2.2kΩ; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 2.2kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 44087 шт: термін постачання 14-30 дні (днів) |
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CRCW06032K20FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 2.2kΩ; 0.1W; ±1%; CRCW0603; 75V Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 2.2kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Manufacturer series: CRCW0603 Mounting: SMD Operating temperature: -55...155°C |
на замовлення 25580 шт: термін постачання 14-30 дні (днів) |
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GSC00AG2211HARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 220uF; 50VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...105°C Nominal life: 2000h Height: 10mm Manufacturer series: GSC Dimensions: 10x10mm |
на замовлення 540 шт: термін постачання 14-30 дні (днів) |
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MAL215097102E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 220uF; 50VDC; 10x10x14mm; ±20% Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 50V DC Body dimensions: 10x10x14mm Tolerance: ±20% Operating temperature: -55...105°C |
на замовлення 237 шт: термін постачання 14-30 дні (днів) |
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MAL214097103E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 47uF; 50VDC; 8x8x10mm; ±20% Type of capacitor: electrolytic Mounting: SMD Capacitance: 47µF Operating voltage: 50V DC Body dimensions: 8x8x10mm Tolerance: ±20% Operating temperature: -55...125°C |
на замовлення 205 шт: термін постачання 14-30 дні (днів) |
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GRC00FG4711HTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 470uF; 50VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 12.5x25mm Terminal pitch: 5mm |
на замовлення 1353 шт: термін постачання 14-30 дні (днів) |
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MAL204831471E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 50V DC Tolerance: ±20% Service life: 3000h Operating temperature: -40...105°C Diameter: 12.5mm Body dimensions: Ø12.5x20mm Height: 20mm Manufacturer series: MAL2048 Terminal pitch: 5mm |
на замовлення 177 шт: термін постачання 14-30 дні (днів) |
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MAL204851471E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 50V DC Tolerance: ±20% Service life: 3000h Operating temperature: -40...105°C Diameter: 12.5mm Body dimensions: Ø12.5x20mm Height: 20mm Terminal pitch: 5mm |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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MAL214631471E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.52mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 50V DC Tolerance: ±20% Service life: 3000h Operating temperature: -55...125°C Diameter: 12.52mm Body dimensions: Ø12.52mm Height: 12.52mm Terminal pitch: 5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MAL215051471E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 50V DC Tolerance: ±20% Service life: 7000h Diameter: 12.5mm Body dimensions: Ø12.5x20mm Height: 20mm Terminal pitch: 5mm |
на замовлення 152 шт: термін постачання 14-30 дні (днів) |
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MAL215061471E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; low ESR; THT; 470uF; 50VDC; Ø12.5x20mm Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 50V DC Tolerance: ±20% Service life: 7000h Diameter: 12.5mm Body dimensions: Ø12.5x20mm Height: 20mm Impedance: 62mΩ Kind of capacitor: low ESR Terminal pitch: 5mm |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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VJ0603Y104JXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100nF; 50V; X7R; ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 10528 шт: термін постачання 14-30 дні (днів) |
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P6KE18A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 18V; 23.8A; unidirectional; DO15,DO204AC; P6KE Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 23.8A Semiconductor structure: unidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Peak pulse power dissipation: 0.6kW Technology: TransZorb® Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
на замовлення 2738 шт: термін постачання 14-30 дні (днів) |
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MAL215956331E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 330uF; 400VDC; Ø30x45mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 330µF Operating voltage: 400V DC Body dimensions: Ø30x45mm Tolerance: ±20% Service life: 5000h Operating temperature: -40...105°C Height: 45mm Diameter: 30mm Terminal pitch: 10mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5818-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: 13 inch reel |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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IRFR9024PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1096 шт: термін постачання 14-30 дні (днів) |
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IRFR9024TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE160CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 160V; 6.8A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Max. off-state voltage: 136V Breakdown voltage: 160V Max. forward impulse current: 6.8A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 898 шт: термін постачання 14-30 дні (днів) |
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1N5407-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; 13 inch reel; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Quantity in set/package: 1400pcs. Capacitance: 30pF Leakage current: 0.5mA |
на замовлення 477 шт: термін постачання 14-30 дні (днів) |
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1.5KE15CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 15.05V; 70.8A; bidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12.8V Breakdown voltage: 15.05V Max. forward impulse current: 70.8A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW12061R00JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 1Ω; 0.25W; ±5%; 200V; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 1Ω Power: 0.25W Tolerance: ±5% Operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
на замовлення 4980 шт: термін постачання 14-30 дні (днів) |
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CRCW12061R00JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 1Ω; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 1Ω Power: 0.25W Tolerance: ±5% Operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 21300 шт: термін постачання 14-30 дні (днів) |
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IHLP2525CZER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 7A; R: 102mΩ; ±20%; IHLP; 6.47x6.47x3mm Type of inductor: wire Mounting: SMD Inductance: 10µH Operating current: 7A Resistance: 0.102Ω Tolerance: ±20% Body dimensions: 6.47x6.47x3mm Operating temperature: -55...125°C Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
на замовлення 3998 шт: термін постачання 14-30 дні (днів) |
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IRF830PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1565 шт: термін постачання 14-30 дні (днів) |
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IRF830APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
на замовлення 838 шт: термін постачання 14-30 дні (днів) |
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IRF830SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF830STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTCLE100E3223JB0A | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 22kΩ; THT; 3740K; -40÷125°C; ±5%; 500mW Resistance: 22kΩ Tolerance: ±5% Power: 0.5W Mounting: THT Operating temperature: -40...125°C Type of sensor: NTC thermistor Material constant B: 3740K |
на замовлення 464 шт: термін постачання 14-30 дні (днів) |
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| 1.5KE200A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
на замовлення 1433 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.08 грн |
| 20+ | 21.97 грн |
| 1.5KE200CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 200V; 5.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 200V; 5.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 1286 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.57 грн |
| 14+ | 30.40 грн |
| 100+ | 24.97 грн |
| 500+ | 21.21 грн |
| 1000+ | 19.63 грн |
| T63YB202KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 250mW; ±10%; linear; T63YB
Resistance: 2kΩ
Mounting: THT
Operating temperature: -55...155°C
Tolerance: ±10%
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Body dimensions: 6.8x6.8x5mm
Terminal pitch: 2.5x2.5mm
Power: 0.25W
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63YB
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 250mW; ±10%; linear; T63YB
Resistance: 2kΩ
Mounting: THT
Operating temperature: -55...155°C
Tolerance: ±10%
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Body dimensions: 6.8x6.8x5mm
Terminal pitch: 2.5x2.5mm
Power: 0.25W
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63YB
на замовлення 186 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 235.65 грн |
| 10+ | 157.85 грн |
| 17+ | 150.33 грн |
| 25+ | 145.32 грн |
| 50+ | 136.97 грн |
| 100+ | 134.46 грн |
| TS53YL202MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 2kΩ; 250mW; SMD; ±20%; linear
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 2kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Leads: YL
Operating temperature: -55...155°C
Operating voltage: 200V
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 2kΩ; 250mW; SMD; ±20%; linear
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 2kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Leads: YL
Operating temperature: -55...155°C
Operating voltage: 200V
на замовлення 266 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 140.31 грн |
| 10+ | 108.57 грн |
| 25+ | 104.40 грн |
| 50+ | 101.06 грн |
| 100+ | 97.72 грн |
| 250+ | 96.05 грн |
| T93YA202KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YA
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64W; 67W; 3296W
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 2kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YA
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64W; 67W; 3296W
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
на замовлення 195 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.13 грн |
| 10+ | 94.37 грн |
| 25+ | 86.02 грн |
| 50+ | 78.51 грн |
| 100+ | 76.00 грн |
| CNY17-4 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 6µs
Turn-off time: 25µs
Manufacturer series: CNY17
CTR@If: 16-32%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 6µs
Turn-off time: 25µs
Manufacturer series: CNY17
CTR@If: 16-32%@10mA
на замовлення 3986 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.28 грн |
| 22+ | 19.63 грн |
| 25+ | 18.04 грн |
| 50+ | 17.04 грн |
| 100+ | 16.20 грн |
| 500+ | 14.36 грн |
| 1000+ | 13.78 грн |
| 2000+ | 13.20 грн |
| SMBJ150CA-E3/52 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167÷185V; 2.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167÷185V; 2.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 303 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.98 грн |
| 21+ | 20.55 грн |
| 24+ | 17.71 грн |
| 100+ | 9.44 грн |
| SMBJ15A-E3/52 | ![]() |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷18.5V; 24.6A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷18.5V; 24.6A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 2696 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.39 грн |
| 38+ | 11.19 грн |
| 43+ | 9.86 грн |
| 57+ | 7.35 грн |
| 100+ | 6.51 грн |
| 250+ | 5.85 грн |
| 500+ | 5.68 грн |
| SMBJ15CA-E3/52 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷18.5V; 24.6A; bidirectional; ±5%; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷18.5V; 24.6A; bidirectional; ±5%; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 8171 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.89 грн |
| 29+ | 14.53 грн |
| 33+ | 12.69 грн |
| 50+ | 8.77 грн |
| 100+ | 7.35 грн |
| 500+ | 5.26 грн |
| 750+ | 5.01 грн |
| MAL214097805E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 10uF; 63VDC; 8x8x10mm; ±20%
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Body dimensions: 8x8x10mm
Tolerance: ±20%
Operating voltage: 63V DC
Type of capacitor: electrolytic
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 10uF; 63VDC; 8x8x10mm; ±20%
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Body dimensions: 8x8x10mm
Tolerance: ±20%
Operating voltage: 63V DC
Type of capacitor: electrolytic
на замовлення 356 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 140.31 грн |
| BAT54C-G3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
на замовлення 2660 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.61 грн |
| 105+ | 4.04 грн |
| 120+ | 3.62 грн |
| 500+ | 3.20 грн |
| T18504KT10 |
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Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Power: 0.75W
Tolerance: ±10%
Number of electrical turns: 15 ±1
Temperature coefficient: 100ppm/°C
Resistance: 500kΩ
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
Track material: cermet
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Power: 0.75W
Tolerance: ±10%
Number of electrical turns: 15 ±1
Temperature coefficient: 100ppm/°C
Resistance: 500kΩ
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
Track material: cermet
на замовлення 75 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 191.58 грн |
| 25+ | 124.44 грн |
| MAL214860471E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 35VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 35V DC
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Body dimensions: Ø10x16mm
Height: 16mm
Diameter: 10mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 35VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 35V DC
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Body dimensions: Ø10x16mm
Height: 16mm
Diameter: 10mm
на замовлення 678 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.84 грн |
| 10+ | 43.18 грн |
| 25+ | 40.34 грн |
| 50+ | 37.58 грн |
| 100+ | 35.41 грн |
| 250+ | 33.66 грн |
| 500+ | 32.82 грн |
| SIHA17N80AEF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 32A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 32A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| SIHA17N80E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 45A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 45A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
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| SIHB17N80AE-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB17N80E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHG17N80AE-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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| SIHG17N80AEF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| SIHG17N80E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP17N80AEF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP17N80E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
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| MAL205757331E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 450V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...85°C
Height: 50mm
Diameter: 35mm
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 450V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...85°C
Height: 50mm
Diameter: 35mm
Terminal pitch: 10mm
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| MAL215947331E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø30x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 450V DC
Body dimensions: Ø30x50mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Height: 50mm
Diameter: 30mm
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 450VDC; Ø30x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 450V DC
Body dimensions: Ø30x50mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Height: 50mm
Diameter: 30mm
Terminal pitch: 10mm
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| IRFP140PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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| 293D106X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
на замовлення 11653 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.49 грн |
| 35+ | 12.03 грн |
| 50+ | 9.35 грн |
| 100+ | 8.44 грн |
| 500+ | 6.43 грн |
| 1000+ | 5.60 грн |
| 2000+ | 5.26 грн |
| IRF9540PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
на замовлення 706 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 149.30 грн |
| 10+ | 95.21 грн |
| 30+ | 77.59 грн |
| 50+ | 71.07 грн |
| 100+ | 63.47 грн |
| 250+ | 55.46 грн |
| 500+ | 50.86 грн |
| IRF9540SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
на замовлення 1965 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.19 грн |
| 5+ | 125.28 грн |
| 10+ | 111.08 грн |
| 25+ | 96.05 грн |
| 50+ | 88.53 грн |
| 100+ | 81.85 грн |
| 250+ | 76.00 грн |
| 500+ | 73.50 грн |
| 1000+ | 70.15 грн |
| IRF9540STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
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| BAV103-GS08 | ![]() |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: 7 inch reel
Power dissipation: 0.5W
Max. load current: 0.625A
Capacitance: 1.5pF
Features of semiconductor devices: small signal
Quantity in set/package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: 7 inch reel
Power dissipation: 0.5W
Max. load current: 0.625A
Capacitance: 1.5pF
Features of semiconductor devices: small signal
Quantity in set/package: 2500pcs.
на замовлення 227154 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.89 грн |
| 85+ | 4.93 грн |
| 179+ | 2.34 грн |
| 500+ | 1.88 грн |
| 1000+ | 1.70 грн |
| 2500+ | 1.45 грн |
| 5000+ | 1.41 грн |
| 10000+ | 1.39 грн |
| 25000+ | 1.36 грн |
| NTCS0603E3222FMT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; SMD; 0603; 3520K; ±1%; 125mW; -40÷150°C
Resistance: 2.2kΩ
Tolerance: ±1%
Power: 0.125W
Mounting: SMD
Case - inch: 0603
Operating temperature: -40...150°C
Material constant B: 3520K
Type of sensor: NTC thermistor
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; SMD; 0603; 3520K; ±1%; 125mW; -40÷150°C
Resistance: 2.2kΩ
Tolerance: ±1%
Power: 0.125W
Mounting: SMD
Case - inch: 0603
Operating temperature: -40...150°C
Material constant B: 3520K
Type of sensor: NTC thermistor
на замовлення 3755 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.08 грн |
| 50+ | 29.31 грн |
| 100+ | 27.73 грн |
| 250+ | 25.06 грн |
| 500+ | 22.97 грн |
| 1000+ | 20.63 грн |
| NTCS0603E3222JMT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; SMD; 0603; 3520K; ±5%; 125mW; -40÷150°C
Resistance: 2.2kΩ
Tolerance: ±5%
Power: 0.125W
Mounting: SMD
Case - inch: 0603
Operating temperature: -40...150°C
Material constant B: 3520K
Type of sensor: NTC thermistor
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; SMD; 0603; 3520K; ±5%; 125mW; -40÷150°C
Resistance: 2.2kΩ
Tolerance: ±5%
Power: 0.125W
Mounting: SMD
Case - inch: 0603
Operating temperature: -40...150°C
Material constant B: 3520K
Type of sensor: NTC thermistor
на замовлення 3047 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.79 грн |
| 25+ | 17.12 грн |
| 100+ | 15.12 грн |
| 500+ | 12.19 грн |
| 1000+ | 10.94 грн |
| CRCW06032K20FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 44087 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 71+ | 6.35 грн |
| 250+ | 1.68 грн |
| 504+ | 0.83 грн |
| 870+ | 0.48 грн |
| 1153+ | 0.36 грн |
| 5000+ | 0.18 грн |
| 10000+ | 0.17 грн |
| 15000+ | 0.16 грн |
| 25000+ | 0.14 грн |
| CRCW06032K20FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2kΩ; 0.1W; ±1%; CRCW0603; 75V
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Manufacturer series: CRCW0603
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2kΩ; 0.1W; ±1%; CRCW0603; 75V
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Manufacturer series: CRCW0603
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 25580 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1352+ | 0.33 грн |
| 2233+ | 0.19 грн |
| 5000+ | 0.11 грн |
| 10000+ | 0.10 грн |
| 20000+ | 0.09 грн |
| GSC00AG2211HARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 50VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Nominal life: 2000h
Height: 10mm
Manufacturer series: GSC
Dimensions: 10x10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 50VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Nominal life: 2000h
Height: 10mm
Manufacturer series: GSC
Dimensions: 10x10mm
на замовлення 540 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 27.07 грн |
| 50+ | 16.20 грн |
| 100+ | 12.28 грн |
| 500+ | 10.02 грн |
| MAL215097102E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 50VDC; 10x10x14mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 50V DC
Body dimensions: 10x10x14mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 50VDC; 10x10x14mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 50V DC
Body dimensions: 10x10x14mm
Tolerance: ±20%
Operating temperature: -55...105°C
на замовлення 237 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.40 грн |
| 10+ | 101.89 грн |
| 50+ | 73.50 грн |
| 100+ | 61.80 грн |
| MAL214097103E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 50VDC; 8x8x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 50V DC
Body dimensions: 8x8x10mm
Tolerance: ±20%
Operating temperature: -55...125°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 50VDC; 8x8x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 50V DC
Body dimensions: 8x8x10mm
Tolerance: ±20%
Operating temperature: -55...125°C
на замовлення 205 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 142.11 грн |
| GRC00FG4711HTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 12.5x25mm
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 12.5x25mm
Terminal pitch: 5mm
на замовлення 1353 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.72 грн |
| 20+ | 21.21 грн |
| 50+ | 15.12 грн |
| 150+ | 12.78 грн |
| 300+ | 10.94 грн |
| MAL204831471E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Manufacturer series: MAL2048
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Manufacturer series: MAL2048
Terminal pitch: 5mm
на замовлення 177 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 146.61 грн |
| 10+ | 96.88 грн |
| 50+ | 76.00 грн |
| 100+ | 69.32 грн |
| MAL204851471E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Terminal pitch: 5mm
на замовлення 12 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 129.52 грн |
| 10+ | 76.00 грн |
| MAL214631471E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.52mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 3000h
Operating temperature: -55...125°C
Diameter: 12.52mm
Body dimensions: Ø12.52mm
Height: 12.52mm
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.52mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 3000h
Operating temperature: -55...125°C
Diameter: 12.52mm
Body dimensions: Ø12.52mm
Height: 12.52mm
Terminal pitch: 5mm
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В кошику
од. на суму грн.
| MAL215051471E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 7000h
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 7000h
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Terminal pitch: 5mm
на замовлення 152 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.49 грн |
| 10+ | 96.05 грн |
| 50+ | 83.52 грн |
| 100+ | 78.51 грн |
| MAL215061471E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 470uF; 50VDC; Ø12.5x20mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 7000h
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Impedance: 62mΩ
Kind of capacitor: low ESR
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 470uF; 50VDC; Ø12.5x20mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 7000h
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Impedance: 62mΩ
Kind of capacitor: low ESR
Terminal pitch: 5mm
на замовлення 92 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 133.11 грн |
| 10+ | 66.81 грн |
| 50+ | 63.47 грн |
| VJ0603Y104JXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 10528 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 173+ | 2.42 грн |
| 371+ | 1.13 грн |
| 802+ | 0.52 грн |
| 1000+ | 0.44 грн |
| 4000+ | 0.38 грн |
| 8000+ | 0.37 грн |
| P6KE18A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 18V; 23.8A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 18V; 23.8A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
на замовлення 2738 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.49 грн |
| 40+ | 10.52 грн |
| MAL215956331E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 400VDC; Ø30x45mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 400V DC
Body dimensions: Ø30x45mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Height: 45mm
Diameter: 30mm
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 400VDC; Ø30x45mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 330µF
Operating voltage: 400V DC
Body dimensions: Ø30x45mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Height: 45mm
Diameter: 30mm
Terminal pitch: 10mm
товару немає в наявності
В кошику
од. на суму грн.
| 1N5818-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
на замовлення 10 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 41.76 грн |
| IRFR9024PBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1096 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 108.83 грн |
| 6+ | 73.50 грн |
| 10+ | 60.22 грн |
| 25+ | 46.44 грн |
| 50+ | 39.25 грн |
| 75+ | 36.16 грн |
| 150+ | 32.24 грн |
| 300+ | 29.65 грн |
| 525+ | 28.81 грн |
| IRFR9024TRPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE160CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 160V; 6.8A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 160V
Max. forward impulse current: 6.8A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 160V; 6.8A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 136V
Breakdown voltage: 160V
Max. forward impulse current: 6.8A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 898 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.07 грн |
| 11+ | 38.84 грн |
| 100+ | 28.31 грн |
| 500+ | 22.05 грн |
| 1N5407-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
на замовлення 477 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.39 грн |
| 39+ | 10.94 грн |
| 100+ | 9.27 грн |
| 250+ | 8.52 грн |
| 1.5KE15CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.05V; 70.8A; bidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15.05V
Max. forward impulse current: 70.8A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.05V; 70.8A; bidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15.05V
Max. forward impulse current: 70.8A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| CRCW12061R00JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1Ω; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 1Ω
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1Ω; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 1Ω
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
на замовлення 4980 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 160+ | 2.99 грн |
| 200+ | 2.19 грн |
| 500+ | 1.74 грн |
| 1000+ | 1.52 грн |
| CRCW12061R00JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1Ω; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 1Ω
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1Ω; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 1Ω
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 21300 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.66 грн |
| 700+ | 0.62 грн |
| 1000+ | 0.47 грн |
| 5000+ | 0.36 грн |
| 15000+ | 0.34 грн |
| IHLP2525CZER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; R: 102mΩ; ±20%; IHLP; 6.47x6.47x3mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 7A
Resistance: 0.102Ω
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; R: 102mΩ; ±20%; IHLP; 6.47x6.47x3mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 7A
Resistance: 0.102Ω
Tolerance: ±20%
Body dimensions: 6.47x6.47x3mm
Operating temperature: -55...125°C
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
на замовлення 3998 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.86 грн |
| 12+ | 37.17 грн |
| 50+ | 29.57 грн |
| 100+ | 27.23 грн |
| 250+ | 25.31 грн |
| 500+ | 24.14 грн |
| 1000+ | 23.22 грн |
| IRF830PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1565 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.64 грн |
| 10+ | 50.28 грн |
| 30+ | 41.34 грн |
| 50+ | 40.09 грн |
| 100+ | 38.67 грн |
| 150+ | 37.67 грн |
| 500+ | 35.83 грн |
| 1000+ | 34.58 грн |
| IRF830APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 838 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 145.71 грн |
| 10+ | 87.86 грн |
| 50+ | 70.15 грн |
| 100+ | 63.64 грн |
| 250+ | 56.04 грн |
| 500+ | 50.86 грн |
| 750+ | 48.11 грн |
| IRF830SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| IRF830STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 18A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NTCLE100E3223JB0A |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 22kΩ; THT; 3740K; -40÷125°C; ±5%; 500mW
Resistance: 22kΩ
Tolerance: ±5%
Power: 0.5W
Mounting: THT
Operating temperature: -40...125°C
Type of sensor: NTC thermistor
Material constant B: 3740K
Category: THT measurement NTC thermistors
Description: NTC thermistor; 22kΩ; THT; 3740K; -40÷125°C; ±5%; 500mW
Resistance: 22kΩ
Tolerance: ±5%
Power: 0.5W
Mounting: THT
Operating temperature: -40...125°C
Type of sensor: NTC thermistor
Material constant B: 3740K
на замовлення 464 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.78 грн |
| 18+ | 24.47 грн |
| 25+ | 23.22 грн |
| 50+ | 22.22 грн |
| 100+ | 21.21 грн |





































