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P600M-E3/54 P600M-E3/54 VISHAY p600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; 13 inch reel; Ifsm: 400A; P600
Mounting: THT
Quantity in set/package: 800pcs.
Kind of package: 13 inch reel
Max. off-state voltage: 1kV
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 2.5µs
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 0.4kA
на замовлення 975 шт:
термін постачання 14-30 дні (днів)
10+47.67 грн
11+39.00 грн
50+33.16 грн
100+30.57 грн
250+27.39 грн
500+24.97 грн
800+23.38 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BAS386-TR BAS386-TR VISHAY BAS386-TR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 8pF
Case: MicroMELF
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 9984 шт:
термін постачання 14-30 дні (днів)
28+16.19 грн
37+11.44 грн
100+7.72 грн
500+5.85 грн
1000+5.21 грн
2500+4.50 грн
5000+4.05 грн
7500+3.82 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAS385-TR BAS385-TR VISHAY bas385.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 10pF
Case: MicroMELF
Leakage current: 2.3µA
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 9708 шт:
термін постачання 14-30 дні (днів)
20+22.49 грн
35+12.28 грн
55+7.63 грн
100+6.38 грн
500+4.61 грн
1000+4.18 грн
1300+4.04 грн
2500+3.77 грн
5000+3.57 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BAS383-TR BAS383-TR VISHAY bas381.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Capacitance: 1.6pF
Case: MicroMELF
Leakage current: 0.2µA
Max. forward impulse current: 0.5A
Load current: 30mA
Max. load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 1610 шт:
термін постачання 14-30 дні (днів)
105+4.36 грн
115+3.63 грн
500+3.22 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
MSS2P3-M3/89A MSS2P3-M3/89A VISHAY mss2p3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO219AD; SMD; 30V; 2A; 7 inch reel
Type of diode: Schottky switching
Case: DO219AD
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
на замовлення 4184 шт:
термін постачання 14-30 дні (днів)
63+7.20 грн
81+5.18 грн
85+4.93 грн
100+4.43 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MSS2P2HM3_A/H VISHAY mss2p3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
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MSS2P3HM3_A/H VISHAY mss2p3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
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VS-42CTQ030S-M3 VS-42CTQ030S-M3 VISHAY vs-42ctq030x.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Max. load current: 40A
Max. forward impulse current: 360A
Kind of package: tube
Quantity in set/package: 50pcs.
на замовлення 1576 шт:
термін постачання 14-30 дні (днів)
5+102.53 грн
10+85.19 грн
50+81.85 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
VS-42CTQ030STRR-M3 VISHAY vs-42ctq030s-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-42CTQ030SHM3 VISHAY vs-42ctq030shm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
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VS-42CTQ030STRL-M3 VISHAY vs-42ctq030s-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-42CTQ030STRLHM3 VISHAY vs-42ctq030shm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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VS-42CTQ030STRRHM3 VISHAY vs-42ctq030shm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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IRFDC20PBF VISHAY sihfdc20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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SI2308CDS-T1-GE3 SI2308CDS-T1-GE3 VISHAY si2308cds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4397 шт:
термін постачання 14-30 дні (днів)
14+34.18 грн
21+20.71 грн
100+11.94 грн
500+8.69 грн
1000+8.35 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 VISHAY SI2307CDS-T1-GE3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 5122 шт:
термін постачання 14-30 дні (днів)
16+29.68 грн
22+19.71 грн
50+15.03 грн
100+13.53 грн
500+11.11 грн
1000+10.36 грн
3000+9.52 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2929 шт:
термін постачання 14-30 дні (днів)
10+49.47 грн
17+25.89 грн
50+19.71 грн
100+17.62 грн
500+13.95 грн
1000+12.53 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI2304DDS-T1-GE3 SI2304DDS-T1-GE3 VISHAY SI2304DDS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Gate charge: 2.1nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Drain current: 3.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2267 шт:
термін постачання 14-30 дні (днів)
13+35.98 грн
19+22.47 грн
100+13.61 грн
500+9.94 грн
1000+8.77 грн
1500+8.18 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SI2306BDS-T1-E3 SI2306BDS-T1-E3 VISHAY SI2306BDS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1517 шт:
термін постачання 14-30 дні (днів)
10+47.67 грн
13+33.66 грн
50+24.80 грн
100+21.88 грн
500+20.88 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI2308BDS-T1-E3 SI2308BDS-T1-E3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
7+63.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SI2307BDS-T1-E3 SI2307BDS-T1-E3 VISHAY si2307bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 VISHAY si2304bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 1.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
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SI2306BDS-T1-GE3 VISHAY si2306bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI2303CDS-T1-BE3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SI2303CDS-T1-E3 VISHAY si2303cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SI2304BDS-T1-E3 VISHAY si2304bds.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: TrenchFET®
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MAL205857472E3 MAL205857472E3 VISHAY 058059pll-si.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Operating temperature: -40...105°C
Capacitance: 4.7mF
Terminal pitch: 10mm
Height: 30mm
Diameter: 30mm
Body dimensions: Ø30x30mm
Tolerance: ±20%
Operating voltage: 40V DC
Service life: 5000h
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
1+480.29 грн
5+407.57 грн
10+387.52 грн
25+374.99 грн
50+364.14 грн
100+361.63 грн
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6N139 6N139 VISHAY 6N139-VIS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
Collector-emitter voltage: 7V
CTR@If: 2000%@1.6mA
на замовлення 666 шт:
термін постачання 14-30 дні (днів)
4+112.43 грн
10+62.64 грн
25+53.45 грн
50+49.28 грн
Мінімальне замовлення: 4
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MCS0402MD1691BE000 VISHAY Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
10000+2.99 грн
Мінімальне замовлення: 10000
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SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 VISHAY si4936cdy-t1-e3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 2715 шт:
термін постачання 14-30 дні (днів)
7+64.76 грн
10+43.76 грн
50+30.40 грн
100+26.06 грн
500+23.13 грн
Мінімальне замовлення: 7
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SI4925BDY-T1-E3 SI4925BDY-T1-E3 VISHAY SI4925BDY-T1-E3.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Technology: TrenchFET®
Drain-source voltage: -30V
Drain current: -5.7A
Gate charge: 50nC
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
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SI4909DY-T1-GE3 SI4909DY-T1-GE3 VISHAY si4909dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -40V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -6.4A
Gate charge: 63nC
Type of transistor: P-MOSFET
On-state resistance: 27mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4946CDY-T1-GE3 VISHAY si4946cdy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.1A
Pulsed drain current: 25A
Power dissipation: 2.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 51.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI4931DY-T1-GE3 VISHAY si4931dy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4932DY-T1-GE3 VISHAY si4932dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 8A
Gate charge: 48nC
Type of transistor: N-MOSFET x2
On-state resistance: 17mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-E3 VISHAY si4963bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-E3 VISHAY si4900dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-GE3 VISHAY si4900dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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Si4904DY-T1-E3 VISHAY si4904dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4904DY-T1-GE3 VISHAY si4904dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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Si4922BDY-T1-E3 VISHAY si4922bd.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4922BDY-T1-GE3 VISHAY si4922bd.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4931DY-T1-E3 VISHAY si4931dy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4936BDY-T1-E3 VISHAY Si4936BDY.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 6.9A
Gate charge: 15nC
Type of transistor: N-MOSFET x2
On-state resistance: 51mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943BDY-T1-E3 VISHAY si4943bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.4A
Gate charge: 25nC
Type of transistor: P-MOSFET x2
On-state resistance: 31mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943CDY-T1-E3 VISHAY si4943cdy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8A
Gate charge: 62nC
Type of transistor: P-MOSFET x2
On-state resistance: 33mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943CDY-T1-GE3 VISHAY si4943cdy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8A
Gate charge: 62nC
Type of transistor: P-MOSFET x2
On-state resistance: 33mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-GE3 VISHAY si4963bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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MCT06030C1740DPW00 MCT06030C1740DPW00 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 174Ω; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 174Ω
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
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GBU4K-E3/45 GBU4K-E3/45 VISHAY gbu4a.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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CRCW0402499RFKED CRCW0402499RFKED VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 0.063W; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 499Ω
Power: 63mW
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
Mounting: SMD
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
3+150.20 грн
Мінімальне замовлення: 3
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SMM02040C2499FB300 SMM02040C2499FB300 VISHAY VISHAY_smm0204.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; MiniMELF; 0204; 24.9Ω; 0.4W; ±1%; 200V
Diameter: 1.5mm
Type of resistor: thin film
Case: MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: Ø1.5x3.6mm
Length: 3.6mm
Power: 0.4W
Tolerance: ±1%
Resistance: 24.9Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 200V
Case - inch: 0204
Case - mm: 0510
на замовлення 475 шт:
термін постачання 14-30 дні (днів)
100+4.71 грн
125+3.42 грн
250+2.93 грн
Мінімальне замовлення: 100
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CRCW0402499RFKTDBC CRCW0402499RFKTDBC VISHAY Data+Sheet+CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 63mW; ±1%; 50V; 1x0.5x0.35mm
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Quantity in set/package: 10000pcs.
Case - inch: 0402
Case - mm: 1005
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CRCW2512499KFKEG CRCW2512499KFKEG VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499kΩ; 1W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1W
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Resistance: 499kΩ
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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CRCW2512499RFKEGHP CRCW2512499RFKEGHP VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499Ω; 1.5W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1.5W
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Resistance: 499Ω
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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CRCW0402499RFKTD CRCW0402499RFKTD VISHAY 72.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 63mW; ±1%; 50V; 1x0.5x0.35mm
Conform to the norm: AEC-Q200
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Roll diameter max.: 180mm
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Quantity in set/package: 10000pcs.
Case - inch: 0402
Case - mm: 1005
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CRCW2512499RFKEG CRCW2512499RFKEG VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499Ω; 1W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1W
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Resistance: 499Ω
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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RCA0402499KFKED RCA0402499KFKED VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0402; 499kΩ; 63mW; ±1%; 50V; -55÷155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499kΩ
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
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RCA0402499RFKED RCA0402499RFKED VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0402; 499Ω; 63mW; ±1%; 50V; -55÷155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
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MCT06030F6121BP500 VISHAY Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 6.12kΩ; 0.125W; ±0.1%; MCT0603; 0
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 6.12kΩ
Power: 0.125W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 10ppm/°C
Roll diameter max.: 180mm
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P600M-E3/54 p600.pdf
P600M-E3/54
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; 13 inch reel; Ifsm: 400A; P600
Mounting: THT
Quantity in set/package: 800pcs.
Kind of package: 13 inch reel
Max. off-state voltage: 1kV
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 2.5µs
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 0.4kA
на замовлення 975 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+47.67 грн
11+39.00 грн
50+33.16 грн
100+30.57 грн
250+27.39 грн
500+24.97 грн
800+23.38 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BAS386-TR BAS386-TR.pdf
BAS386-TR
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 8pF
Case: MicroMELF
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 9984 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.19 грн
37+11.44 грн
100+7.72 грн
500+5.85 грн
1000+5.21 грн
2500+4.50 грн
5000+4.05 грн
7500+3.82 грн
Мінімальне замовлення: 28
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BAS385-TR bas385.pdf
BAS385-TR
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 10pF
Case: MicroMELF
Leakage current: 2.3µA
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 9708 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.49 грн
35+12.28 грн
55+7.63 грн
100+6.38 грн
500+4.61 грн
1000+4.18 грн
1300+4.04 грн
2500+3.77 грн
5000+3.57 грн
Мінімальне замовлення: 20
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BAS383-TR bas381.pdf
BAS383-TR
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Capacitance: 1.6pF
Case: MicroMELF
Leakage current: 0.2µA
Max. forward impulse current: 0.5A
Load current: 30mA
Max. load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
на замовлення 1610 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
105+4.36 грн
115+3.63 грн
500+3.22 грн
Мінімальне замовлення: 105
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MSS2P3-M3/89A mss2p3.pdf
MSS2P3-M3/89A
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO219AD; SMD; 30V; 2A; 7 inch reel
Type of diode: Schottky switching
Case: DO219AD
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
на замовлення 4184 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.20 грн
81+5.18 грн
85+4.93 грн
100+4.43 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MSS2P2HM3_A/H mss2p3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
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MSS2P3HM3_A/H mss2p3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
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VS-42CTQ030S-M3 vs-42ctq030x.pdf
VS-42CTQ030S-M3
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Max. load current: 40A
Max. forward impulse current: 360A
Kind of package: tube
Quantity in set/package: 50pcs.
на замовлення 1576 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+102.53 грн
10+85.19 грн
50+81.85 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
VS-42CTQ030STRR-M3 vs-42ctq030s-m3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-42CTQ030SHM3 vs-42ctq030shm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
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VS-42CTQ030STRL-M3 vs-42ctq030s-m3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-42CTQ030STRLHM3 vs-42ctq030shm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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VS-42CTQ030STRRHM3 vs-42ctq030shm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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IRFDC20PBF sihfdc20.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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SI2308CDS-T1-GE3 si2308cds.pdf
SI2308CDS-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4397 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.18 грн
21+20.71 грн
100+11.94 грн
500+8.69 грн
1000+8.35 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3.pdf
SI2307CDS-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 5122 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.68 грн
22+19.71 грн
50+15.03 грн
100+13.53 грн
500+11.11 грн
1000+10.36 грн
3000+9.52 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SI2303CDS-T1-GE3 si2303cd.pdf
SI2303CDS-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2929 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+49.47 грн
17+25.89 грн
50+19.71 грн
100+17.62 грн
500+13.95 грн
1000+12.53 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI2304DDS-T1-GE3 SI2304DDS.pdf
SI2304DDS-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Gate charge: 2.1nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Drain current: 3.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2267 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+35.98 грн
19+22.47 грн
100+13.61 грн
500+9.94 грн
1000+8.77 грн
1500+8.18 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SI2306BDS-T1-E3 SI2306BDS.pdf
SI2306BDS-T1-E3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1517 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+47.67 грн
13+33.66 грн
50+24.80 грн
100+21.88 грн
500+20.88 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI2308BDS-T1-E3
SI2308BDS-T1-E3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+63.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SI2307BDS-T1-E3 si2307bd.pdf
SI2307BDS-T1-E3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI2304BDS-T1-GE3 si2304bds.pdf
SI2304BDS-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 1.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
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SI2306BDS-T1-GE3 si2306bd.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI2303CDS-T1-BE3 si2303cd.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SI2303CDS-T1-E3 si2303cd.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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SI2304BDS-T1-E3 si2304bds.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: TrenchFET®
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MAL205857472E3 058059pll-si.pdf
MAL205857472E3
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Operating temperature: -40...105°C
Capacitance: 4.7mF
Terminal pitch: 10mm
Height: 30mm
Diameter: 30mm
Body dimensions: Ø30x30mm
Tolerance: ±20%
Operating voltage: 40V DC
Service life: 5000h
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+480.29 грн
5+407.57 грн
10+387.52 грн
25+374.99 грн
50+364.14 грн
100+361.63 грн
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6N139 6N139-VIS.pdf
6N139
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
Collector-emitter voltage: 7V
CTR@If: 2000%@1.6mA
на замовлення 666 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+112.43 грн
10+62.64 грн
25+53.45 грн
50+49.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MCS0402MD1691BE000
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10000+2.99 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SI4936CDY-T1-GE3 si4936cdy-t1-e3.pdf
SI4936CDY-T1-GE3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 2715 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+64.76 грн
10+43.76 грн
50+30.40 грн
100+26.06 грн
500+23.13 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SI4925BDY-T1-E3 SI4925BDY-T1-E3.pdf
SI4925BDY-T1-E3
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Technology: TrenchFET®
Drain-source voltage: -30V
Drain current: -5.7A
Gate charge: 50nC
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
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SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -40V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -6.4A
Gate charge: 63nC
Type of transistor: P-MOSFET
On-state resistance: 27mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
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SI4946CDY-T1-GE3 si4946cdy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.1A
Pulsed drain current: 25A
Power dissipation: 2.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 51.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI4931DY-T1-GE3 si4931dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
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SI4932DY-T1-GE3 si4932dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 8A
Gate charge: 48nC
Type of transistor: N-MOSFET x2
On-state resistance: 17mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-E3 si4963bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-E3 si4900dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4900DY-T1-GE3 si4900dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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Si4904DY-T1-E3 si4904dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4904DY-T1-GE3 si4904dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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Si4922BDY-T1-E3 si4922bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4922BDY-T1-GE3 si4922bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4931DY-T1-E3 si4931dy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4936BDY-T1-E3 Si4936BDY.PDF
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 6.9A
Gate charge: 15nC
Type of transistor: N-MOSFET x2
On-state resistance: 51mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943BDY-T1-E3 si4943bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.4A
Gate charge: 25nC
Type of transistor: P-MOSFET x2
On-state resistance: 31mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943CDY-T1-E3 si4943cdy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8A
Gate charge: 62nC
Type of transistor: P-MOSFET x2
On-state resistance: 33mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4943CDY-T1-GE3 si4943cdy.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8A
Gate charge: 62nC
Type of transistor: P-MOSFET x2
On-state resistance: 33mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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SI4963BDY-T1-GE3 si4963bd.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
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MCT06030C1740DPW00
MCT06030C1740DPW00
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 174Ω; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 174Ω
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
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GBU4K-E3/45 gbu4a.pdf
GBU4K-E3/45
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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CRCW0402499RFKED dcrcwe3.pdf
CRCW0402499RFKED
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 0.063W; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 499Ω
Power: 63mW
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
Mounting: SMD
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+150.20 грн
Мінімальне замовлення: 3
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SMM02040C2499FB300 VISHAY_smm0204.pdf
SMM02040C2499FB300
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; MiniMELF; 0204; 24.9Ω; 0.4W; ±1%; 200V
Diameter: 1.5mm
Type of resistor: thin film
Case: MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: Ø1.5x3.6mm
Length: 3.6mm
Power: 0.4W
Tolerance: ±1%
Resistance: 24.9Ω
Temperature coefficient: 50ppm/°C
Operating voltage: 200V
Case - inch: 0204
Case - mm: 0510
на замовлення 475 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
100+4.71 грн
125+3.42 грн
250+2.93 грн
Мінімальне замовлення: 100
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CRCW0402499RFKTDBC Data+Sheet+CRCW_BCe3.pdf
CRCW0402499RFKTDBC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 63mW; ±1%; 50V; 1x0.5x0.35mm
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Quantity in set/package: 10000pcs.
Case - inch: 0402
Case - mm: 1005
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CRCW2512499KFKEG CRCW.pdf
CRCW2512499KFKEG
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499kΩ; 1W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1W
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Resistance: 499kΩ
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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CRCW2512499RFKEGHP CRCW.pdf
CRCW2512499RFKEGHP
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499Ω; 1.5W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1.5W
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Resistance: 499Ω
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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CRCW0402499RFKTD 72.pdf
CRCW0402499RFKTD
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 499Ω; 63mW; ±1%; 50V; 1x0.5x0.35mm
Conform to the norm: AEC-Q200
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Roll diameter max.: 180mm
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Quantity in set/package: 10000pcs.
Case - inch: 0402
Case - mm: 1005
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CRCW2512499RFKEG CRCW.pdf
CRCW2512499RFKEG
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 499Ω; 1W; ±1%; 500V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 1W
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Resistance: 499Ω
Operating voltage: 500V
Case - inch: 2512
Case - mm: 6332
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RCA0402499KFKED rcae3.pdf
RCA0402499KFKED
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 499kΩ; 63mW; ±1%; 50V; -55÷155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499kΩ
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
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RCA0402499RFKED rcae3.pdf
RCA0402499RFKED
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 499Ω; 63mW; ±1%; 50V; -55÷155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 63mW
Tolerance: ±1%
Resistance: 499Ω
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
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MCT06030F6121BP500
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 6.12kΩ; 0.125W; ±0.1%; MCT0603; 0
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 6.12kΩ
Power: 0.125W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 10ppm/°C
Roll diameter max.: 180mm
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