| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF740ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 959 шт: термін постачання 14-30 дні (днів) |
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IRF740ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF740PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 380 шт: термін постачання 14-30 дні (днів) |
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IRF740STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFZ44RPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFZ44SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFZ44STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFZ24PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
на замовлення 461 шт: термін постачання 14-30 дні (днів) |
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IRFZ40PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFZ48PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFZ48RSPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFZ48SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFZ48STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
| BFC238330104 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT Mounting: THT Operating voltage: 350V AC; 1kV DC Tolerance: ±5% Terminal pitch: 22.5mm Climate class: 55/110/56 Leads: 2pin Body dimensions: 26x19.5x10mm Type of capacitor: polypropylene Capacitance: 0.1µF |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||||||||||||
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BFC238330153 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT Mounting: THT Lead length: 3.5mm Operating voltage: 350V AC; 1kV DC Tolerance: ±5% Terminal pitch: 15mm Climate class: 55/110/56 Leads: 2pin Body dimensions: 17.5x11x5mm Type of capacitor: polypropylene Capacitance: 15nF |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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IRL540SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IRL540STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||
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TS53YJ103MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V Resistance: 10kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C Type of potentiometer: mounting Track material: cermet Leads: YJ Mechanical rotation angle: 270 ±10° Characteristics: linear Kind of potentiometer: single turn Temperature coefficient: 100ppm/°C Torque: 1.5Ncm Operating voltage: 200V IP rating: IP67 Mounting: SMD Electrical rotation angle: 220 ±15° |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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1.5KE82CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 364 шт: термін постачання 14-30 дні (днів) |
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GRC00DD1021CTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 16V DC Terminal pitch: 5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 10x16mm |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||
| IRFP21N60LPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 84A Gate charge: 150nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRF540STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 77mΩ Pulsed drain current: 110A Power dissipation: 150W Gate charge: 72nC Polarisation: unipolar Drain current: 28A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRF540STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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GSC00AF2211VARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Manufacturer series: GSC Height: 10mm Nominal life: 2000h Dimensions: 8x10mm |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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BZX55C3V0-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
на замовлення 13580 шт: термін постачання 14-30 дні (днів) |
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IRF510STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF830ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
на замовлення 927 шт: термін постачання 14-30 дні (днів) |
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IRF830ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRF830BPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
| IRF840LCLPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRF840LCSPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF840STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRF9530STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.3Ω Pulsed drain current: -48A Power dissipation: 88W Gate charge: 38nC Polarisation: unipolar Drain current: -8.2A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRF9530STRRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFB13N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF640PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF640STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
| SI7852DP-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Case: PowerPAK® SO8 Mounting: SMD Technology: TrenchFET® Drain current: 7.6A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 16.5mΩ Pulsed drain current: 50A Power dissipation: 1.2W Gate charge: 41nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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PE30L0FL472KAB | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; 4.7kΩ; single turn; 3W; ±10%; 6mm; linear Type of potentiometer: shaft Resistance: 4.7kΩ Kind of potentiometer: single turn Power: 3W Mounting: on panel Tolerance: ±10% Track material: cermet Electrical rotation angle: 270 ±10° Operating temperature: -55...125°C Shaft diameter: 6mm Thread length: 12mm Leads: for soldering Mechanical rotation angle: 300 ±5° Characteristics: linear Shaft length: 25mm Min. insulation resistance: 1TΩ Temperature coefficient: 150ppm/°C Potentiometer features: for industrial use; for military use Operating voltage: 300V Shaft surface: smooth IP rating: IP67 |
на замовлення 91 шт: термін постачання 14-30 дні (днів) |
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SI2301CDS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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MRS25000C2324FCT00 | VISHAY |
Category: THT ResistorsDescription: Resistor: thin film; 2.32MΩ; THT; 600mW; ±1%; 350V; Ø0.6x28mm Tolerance: ±1% Diameter: 2.5mm Type of resistor: thin film Mounting: THT Resistance: 2.32MΩ Length: 6.5mm Body dimensions: Ø2.5x6.5mm Power: 0.6W Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm Operating voltage: 350V |
на замовлення 8840 шт: термін постачання 14-30 дні (днів) |
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IRF9540STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRFR9024TRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 19nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| IRF9640LPBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CNY17-3X009T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 4.3µs Manufacturer series: CNY17 CTR@If: 40-80%@10mA |
на замовлення 425 шт: термін постачання 14-30 дні (днів) |
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BFC233620473 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm Tolerance: ±20% Terminal pitch: 15mm Mounting: THT Kind of capacitor: X2 Climate class: 55/105/56 Leads: 2pin Body dimensions: 5x11x17.5mm Type of capacitor: polypropylene Capacitance: 47nF Lead length: 3.5mm Operating voltage: 310V AC; 630V DC |
на замовлення 3596 шт: термін постачання 14-30 дні (днів) |
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TDCG1060M | VISHAY |
Category: 7-segment LED displaysDescription: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd Operating voltage: 2...2.4V Mounting: THT Type of display: LED Digit height: 10mm; 0.39" Colour: green Wavelength: 562...575nm Operating current: 20mA Kind of display: 7-segment Luminosity: 2.8...4mcd Dimensions: 40.2x12.8x7mm Number of characters: 4 Common electrode: cathode |
на замовлення 76 шт: термін постачання 14-30 дні (днів) |
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T18105KT10 | VISHAY |
Category: 19mm multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 1MΩ Power: 0.75W Tolerance: ±10% Characteristics: linear Mounting: THT Track material: cermet Operating temperature: -55...125°C Potentiometer standard: 19mm Temperature coefficient: 100ppm/°C Engineering PN: 43P; 89; 3006 Number of electrical turns: 15 ±1 Min. insulation resistance: 1TΩ IP rating: IP67 |
на замовлення 105 шт: термін постачання 14-30 дні (днів) |
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SI2301BDS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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GRC00KK1022A00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 100V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 18x40mm |
на замовлення 208 шт: термін постачання 14-30 дні (днів) |
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VJ0603A101JXBAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 1183 шт: термін постачання 14-30 дні (днів) |
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VJ0805A101JXEAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 500V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 1210 шт: термін постачання 14-30 дні (днів) |
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VJ0603Y101KXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 1041 шт: термін постачання 14-30 дні (днів) |
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CRCW08050000Z0TABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0Ω; SMD; 0805; 0.125W; 150V; -55÷155°C Mounting: SMD Case - inch: 0805 Case - mm: 2012 Type of resistor: thick film Operating temperature: -55...155°C Resistance: 0Ω Power: 0.125W Operating voltage: 150V |
на замовлення 83901 шт: термін постачання 14-30 дні (днів) |
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SIHP15N50E-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14.5A Pulsed drain current: 28A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VJ1206A103JXATW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 149 шт: термін постачання 14-30 дні (днів) |
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SIHP065N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 25A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
на замовлення 461 шт: термін постачання 14-30 дні (днів) |
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CRCW08051K50FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 1.5kΩ; SMD; 0805; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 1.5kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 31000 шт: термін постачання 14-30 дні (днів) |
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| IRF740ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 959 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 196.44 грн |
| 10+ | 112.84 грн |
| 50+ | 91.63 грн |
| 100+ | 86.54 грн |
| IRF740ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF740PBF-BE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 380 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.50 грн |
| 10+ | 101.81 грн |
| 25+ | 90.78 грн |
| 50+ | 83.99 грн |
| 100+ | 75.51 грн |
| IRF740STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFZ44RPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRFZ44SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRFZ44STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFZ24PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 461 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.70 грн |
| 10+ | 58.29 грн |
| 50+ | 51.67 грн |
| 100+ | 48.87 грн |
| 250+ | 45.22 грн |
| IRFZ40PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRFZ48PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRFZ48RSPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRFZ48SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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| IRFZ48STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
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| BFC238330104 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Terminal pitch: 22.5mm
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 26x19.5x10mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Terminal pitch: 22.5mm
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 26x19.5x10mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
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Мінімальне замовлення: 200 шт
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| BFC238330153 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Mounting: THT
Lead length: 3.5mm
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Terminal pitch: 15mm
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Capacitance: 15nF
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Mounting: THT
Lead length: 3.5mm
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Terminal pitch: 15mm
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Capacitance: 15nF
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 118.78 грн |
| IRL540SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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| IRL540STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 800 шт
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| TS53YJ103MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Track material: cermet
Leads: YJ
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Kind of potentiometer: single turn
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
Operating voltage: 200V
IP rating: IP67
Mounting: SMD
Electrical rotation angle: 220 ±15°
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Track material: cermet
Leads: YJ
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Kind of potentiometer: single turn
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
Operating voltage: 200V
IP rating: IP67
Mounting: SMD
Electrical rotation angle: 220 ±15°
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.46 грн |
| 10+ | 131.50 грн |
| 1.5KE82CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 364 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.32 грн |
| 19+ | 23.33 грн |
| 100+ | 20.45 грн |
| 250+ | 18.58 грн |
| GRC00DD1021CTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x16mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x16mm
товару немає в наявності
Мінімальне замовлення: 2 шт
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| IRFP21N60LPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Gate charge: 150nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Gate charge: 150nC
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| IRF540STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Pulsed drain current: 110A
Power dissipation: 150W
Gate charge: 72nC
Polarisation: unipolar
Drain current: 28A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Pulsed drain current: 110A
Power dissipation: 150W
Gate charge: 72nC
Polarisation: unipolar
Drain current: 28A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF540STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GSC00AF2211VARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Height: 10mm
Nominal life: 2000h
Dimensions: 8x10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Height: 10mm
Nominal life: 2000h
Dimensions: 8x10mm
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 19.83 грн |
| 50+ | 11.79 грн |
| BZX55C3V0-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
на замовлення 13580 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.40 грн |
| 103+ | 4.16 грн |
| 122+ | 3.48 грн |
| 182+ | 2.33 грн |
| 1000+ | 1.67 грн |
| 5000+ | 1.53 грн |
| 10000+ | 1.49 грн |
| IRF510STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF830ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 927 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 196.44 грн |
| 5+ | 139.14 грн |
| 10+ | 121.32 грн |
| 50+ | 89.93 грн |
| 100+ | 83.14 грн |
| 250+ | 74.66 грн |
| 500+ | 70.42 грн |
| IRF830ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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| IRF830ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF830BPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840ASTRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| IRF840LCLPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840LCSPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 800 шт
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| IRF9530STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Pulsed drain current: -48A
Power dissipation: 88W
Gate charge: 38nC
Polarisation: unipolar
Drain current: -8.2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Pulsed drain current: -48A
Power dissipation: 88W
Gate charge: 38nC
Polarisation: unipolar
Drain current: -8.2A
товару немає в наявності
Мінімальне замовлення: 800 шт
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| IRF9530STRRPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 800 шт
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| IRFB13N50APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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| IRF640PBF-BE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
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| IRF640STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
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| SI7852DP-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Technology: TrenchFET®
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 16.5mΩ
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 41nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Technology: TrenchFET®
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 16.5mΩ
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 41nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| PE30L0FL472KAB |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 4.7kΩ; single turn; 3W; ±10%; 6mm; linear
Type of potentiometer: shaft
Resistance: 4.7kΩ
Kind of potentiometer: single turn
Power: 3W
Mounting: on panel
Tolerance: ±10%
Track material: cermet
Electrical rotation angle: 270 ±10°
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Leads: for soldering
Mechanical rotation angle: 300 ±5°
Characteristics: linear
Shaft length: 25mm
Min. insulation resistance: 1TΩ
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use; for military use
Operating voltage: 300V
Shaft surface: smooth
IP rating: IP67
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 4.7kΩ; single turn; 3W; ±10%; 6mm; linear
Type of potentiometer: shaft
Resistance: 4.7kΩ
Kind of potentiometer: single turn
Power: 3W
Mounting: on panel
Tolerance: ±10%
Track material: cermet
Electrical rotation angle: 270 ±10°
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Leads: for soldering
Mechanical rotation angle: 300 ±5°
Characteristics: linear
Shaft length: 25mm
Min. insulation resistance: 1TΩ
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use; for military use
Operating voltage: 300V
Shaft surface: smooth
IP rating: IP67
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2601.20 грн |
| 5+ | 2083.67 грн |
| 10+ | 1983.56 грн |
| 20+ | 1911.45 грн |
| 30+ | 1868.18 грн |
| 50+ | 1839.33 грн |
| 80+ | 1817.28 грн |
| SI2301CDS-T1-E3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| MRS25000C2324FCT00 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 2.32MΩ; THT; 600mW; ±1%; 350V; Ø0.6x28mm
Tolerance: ±1%
Diameter: 2.5mm
Type of resistor: thin film
Mounting: THT
Resistance: 2.32MΩ
Length: 6.5mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Operating voltage: 350V
Category: THT Resistors
Description: Resistor: thin film; 2.32MΩ; THT; 600mW; ±1%; 350V; Ø0.6x28mm
Tolerance: ±1%
Diameter: 2.5mm
Type of resistor: thin film
Mounting: THT
Resistance: 2.32MΩ
Length: 6.5mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Operating voltage: 350V
на замовлення 8840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 19.46 грн |
| 100+ | 7.47 грн |
| 1000+ | 4.60 грн |
| 5000+ | 3.40 грн |
| IRF9540STRRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFR9024TRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 19nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 19nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| IRF9640LPBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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| CNY17-3X009T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
CTR@If: 40-80%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
CTR@If: 40-80%@10mA
на замовлення 425 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.99 грн |
| 13+ | 34.36 грн |
| 25+ | 30.12 грн |
| 50+ | 27.32 грн |
| 100+ | 24.94 грн |
| BFC233620473 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Tolerance: ±20%
Terminal pitch: 15mm
Mounting: THT
Kind of capacitor: X2
Climate class: 55/105/56
Leads: 2pin
Body dimensions: 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Lead length: 3.5mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Tolerance: ±20%
Terminal pitch: 15mm
Mounting: THT
Kind of capacitor: X2
Climate class: 55/105/56
Leads: 2pin
Body dimensions: 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Lead length: 3.5mm
Operating voltage: 310V AC; 630V DC
на замовлення 3596 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.37 грн |
| 25+ | 17.65 грн |
| 50+ | 12.64 грн |
| 100+ | 11.20 грн |
| 500+ | 10.01 грн |
| 1000+ | 9.33 грн |
| 2000+ | 8.99 грн |
| TDCG1060M |
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Виробник: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Type of display: LED
Digit height: 10mm; 0.39"
Colour: green
Wavelength: 562...575nm
Operating current: 20mA
Kind of display: 7-segment
Luminosity: 2.8...4mcd
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Common electrode: cathode
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Type of display: LED
Digit height: 10mm; 0.39"
Colour: green
Wavelength: 562...575nm
Operating current: 20mA
Kind of display: 7-segment
Luminosity: 2.8...4mcd
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Common electrode: cathode
на замовлення 76 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 207.40 грн |
| 10+ | 143.38 грн |
| 48+ | 117.93 грн |
| T18105KT10 |
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Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Characteristics: linear
Mounting: THT
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Temperature coefficient: 100ppm/°C
Engineering PN: 43P; 89; 3006
Number of electrical turns: 15 ±1
Min. insulation resistance: 1TΩ
IP rating: IP67
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Characteristics: linear
Mounting: THT
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Temperature coefficient: 100ppm/°C
Engineering PN: 43P; 89; 3006
Number of electrical turns: 15 ±1
Min. insulation resistance: 1TΩ
IP rating: IP67
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.89 грн |
| 10+ | 124.71 грн |
| 25+ | 112.84 грн |
| 50+ | 106.05 грн |
| 100+ | 99.26 грн |
| SI2301BDS-T1-E3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| GRC00KK1022A00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 130.65 грн |
| 10+ | 91.63 грн |
| 50+ | 73.81 грн |
| 100+ | 66.18 грн |
| VJ0603A101JXBAC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 1183 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 20.10 грн |
| VJ0805A101JXEAC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 1210 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.97 грн |
| 100+ | 4.39 грн |
| 500+ | 3.58 грн |
| 1000+ | 3.17 грн |
| VJ0603Y101KXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 1041 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.57 грн |
| 193+ | 2.21 грн |
| 404+ | 1.05 грн |
| CRCW08050000Z0TABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 0805; 0.125W; 150V; -55÷155°C
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 0Ω
Power: 0.125W
Operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 0805; 0.125W; 150V; -55÷155°C
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 0Ω
Power: 0.125W
Operating voltage: 150V
на замовлення 83901 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1183+ | 0.39 грн |
| 1707+ | 0.25 грн |
| 5000+ | 0.19 грн |
| 10000+ | 0.17 грн |
| 15000+ | 0.16 грн |
| 20000+ | 0.15 грн |
| 50000+ | 0.13 грн |
| 75000+ | 0.12 грн |
| SIHP15N50E-BE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14.5A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14.5A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| VJ1206A103JXATW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.98 грн |
| 44+ | 9.67 грн |
| 76+ | 5.60 грн |
| 100+ | 4.40 грн |
| SIHP065N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 461 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 491.55 грн |
| 5+ | 411.47 грн |
| CRCW08051K50FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1.5kΩ; SMD; 0805; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 1.5kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 1.5kΩ; SMD; 0805; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 1.5kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 31000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 240+ | 1.91 грн |
| 500+ | 0.88 грн |
| 1000+ | 0.53 грн |
| 5000+ | 0.33 грн |































