| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BZX55B15-TAP | VISHAY |
 Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 3845 шт: термін постачання 21-30 дні (днів) |
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BZX55B4V7-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 13015 шт: термін постачання 21-30 дні (днів) |
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GRC00JG4702W00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 47µF Operating voltage: 450V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 732 шт: термін постачання 21-30 дні (днів) |
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MAL204317479E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 47µF Operating voltage: 450V DC Body dimensions: Ø18x38mm Tolerance: ±20% Leads: axial Service life: 10000h Operating temperature: -25...85°C |
товар відсутній |
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GRC00JG3321E00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
товар відсутній |
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IRF530PBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
на замовлення 3280 шт: термін постачання 21-30 дні (днів) |
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IRF530SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1660 шт: термін постачання 21-30 дні (днів) |
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BZX55C10-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 12200 шт: термін постачання 21-30 дні (днів) |
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BZX55C11-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 19590 шт: термін постачання 21-30 дні (днів) |
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BZX55C12-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 4290 шт: термін постачання 21-30 дні (днів) |
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MUR460-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 4A; reel,tape; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.05V Reverse recovery time: 50ns |
на замовлення 2045 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Type of diode: rectifying Mounting: THT Case: DO41 Capacitance: 15pF |
на замовлення 27502 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41 Kind of package: Ammo Pack Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Type of diode: rectifying Mounting: THT Case: DO41 Capacitance: 15pF |
на замовлення 617 шт: термін постачання 21-30 дні (днів) |
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293D476X0025D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Tolerance: ±20% Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Operating temperature: -55...125°C Capacitors series: Tantamount |
на замовлення 1084 шт: термін постачання 21-30 дні (днів) |
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293D476X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Tolerance: ±10% Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Operating temperature: -55...125°C Capacitors series: Tantamount |
на замовлення 2406 шт: термін постачання 21-30 дні (днів) |
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| TR3D476K025C0250 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: TR3 ESR value: 0.25Ω |
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VJ1206Y104KXAMT | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товар відсутній |
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VJ1206Y104KXAPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товар відсутній |
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VJ1206Y104KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 42400 шт: термін постачання 21-30 дні (днів) |
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| MAL205752152E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 200VDC; Ø35x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 1.5mF Operating voltage: 200V DC Body dimensions: Ø35x50mm Terminal pitch: 10mm Tolerance: ±20% Service life: 12000h Operating temperature: -40...85°C |
товар відсутній |
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| MAL205857152E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 40VDC; Ø22x25mm; ±20% Tolerance: ±20% Body dimensions: Ø22x25mm Type of capacitor: electrolytic Capacitance: 1.5mF Operating voltage: 40V DC Service life: 5000h Mounting: SNAP-IN Terminal pitch: 10mm Operating temperature: -40...105°C |
товар відсутній |
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SM6T6V8A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SM6T |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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1.5KE6.8A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 1190 шт: термін постачання 21-30 дні (днів) |
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1.5SMC6.8A-E3/9AT | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 6.45÷7.14V; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Semiconductor structure: unidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
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1.5SMC6.8A-M3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 6.45÷7.14V; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Semiconductor structure: unidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
товар відсутній |
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P6SMB6.8A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.8V; 57.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
на замовлення 2411 шт: термін постачання 21-30 дні (днів) |
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SI4800BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2847 шт: термін постачання 21-30 дні (днів) |
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1N4148-TAP | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Max. load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Case: DO35 Max. forward impulse current: 2A Kind of package: Ammo Pack |
на замовлення 10071 шт: термін постачання 21-30 дні (днів) |
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VS-HFA240NJ40CPBF | VISHAY |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 240A; TO244; screw Type of module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 0.4kV Load current: 240A Case: TO244 Max. forward voltage: 1.5V Max. forward impulse current: 0.9kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: ultrafast switching Technology: HEXFRED® Reverse recovery time: 50ns |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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VS-HFA25TB60-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns Type of diode: rectifying Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 25A Case: TO220AC Max. forward voltage: 1.3V Max. forward impulse current: 225A Mounting: THT Features of semiconductor devices: ultrafast switching Kind of package: tube Reverse recovery time: 23ns Capacitance: 55pF |
на замовлення 744 шт: термін постачання 21-30 дні (днів) |
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IRFB20N50KPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
на замовлення 635 шт: термін постачання 21-30 дні (днів) |
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| SIHA20N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
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| SIHB20N50E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhanced |
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SIHG20N50C-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
на замовлення 487 шт: термін постачання 21-30 дні (днів) |
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| SIHG20N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
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| SiHH20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHP20N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
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BPW34 | VISHAY |
Category: Photodiodes Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW Type of photoelement: PIN IR photodiode Mounting: THT Wavelength of peak sensitivity: 900nm Wavelength: 430...1000nm Viewing angle: 65° Active area: 7.5mm2 Optical power: 215mW Dimensions: 5.4x4.3x3.2mm |
на замовлення 1191 шт: термін постачання 21-30 дні (днів) |
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BPW34S | VISHAY |
Category: Photodiodes Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW Type of photoelement: PIN IR photodiode Case: DIL Mounting: THT Wavelength of peak sensitivity: 900nm Wavelength: 430...1000nm Viewing angle: 65° Active area: 7.5mm2 Optical power: 215mW Dimensions: 5.4x4.3x3.2mm |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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VBPW34FAS | VISHAY |
Category: Photodiodes Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 780...1050nm Viewing angle: 130° Active area: 7.5mm2 Front: flat LED lens: black Dimensions: 6.4x3.9x1.2mm Operating temperature: -40...100°C |
на замовлення 310 шт: термін постачання 21-30 дні (днів) |
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VBPW34S | VISHAY |
Category: Photodiodes Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 430...1100nm Viewing angle: 130° Active area: 7.5mm2 Front: flat Dimensions: 6.4x3.9x1.2mm Operating temperature: -40...100°C |
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MAL213661101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm Operating temperature: -55...105°C Body dimensions: Ø10x12mm Tolerance: ±20% Terminal pitch: 5mm Mounting: THT Type of capacitor: electrolytic Capacitance: 100µF Operating voltage: 50V DC Service life: 4000h |
на замовлення 267 шт: термін постачання 21-30 дні (днів) |
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VS-25F120 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 1.3V; 25A; cathode to stud; DO203AA,DO4 Type of diode: rectifying Max. off-state voltage: 1.2kV Max. forward voltage: 1.3V Load current: 25A Max. load current: 40A Semiconductor structure: cathode to stud Case: DO4; DO203AA Fastening thread: 10-32UNF-2A Mounting: screw type Max. forward impulse current: 356A Manufacturer series: VS-25F(R) Kind of package: bulk |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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IRF9630PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB Kind of package: tube Drain-source voltage: -200V Drain current: -4A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 74W Polarisation: unipolar Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220AB |
на замовлення 1090 шт: термін постачання 21-30 дні (днів) |
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IRF9630SPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263 Kind of package: tube Drain-source voltage: -200V Drain current: -4A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 74W Polarisation: unipolar Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: D2PAK; TO263 |
на замовлення 227 шт: термін постачання 21-30 дні (днів) |
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IRFI9630GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP Kind of package: tube Drain-source voltage: -200V Drain current: -2.7A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
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MMSZ4694-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
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| SIHJ7N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 17A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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CRCW12060000Z0TABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C Mounting: SMD Case - mm: 3216 Case - inch: 1206 Operating temperature: -55...155°C Type of resistor: thick film Power: 0.25W Resistance: 0Ω Tolerance: ±5% Max. operating voltage: 200V |
на замовлення 149600 шт: термін постачання 21-30 дні (днів) |
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| TSOP98456 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 56kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
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BAV70-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: reel; tape |
на замовлення 18926 шт: термін постачання 21-30 дні (днів) |
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BAV70-G3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: reel; tape |
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BAV70-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: reel; tape Application: automotive industry |
товар відсутній |
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BAV70-HE3-18 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: reel; tape Application: automotive industry |
товар відсутній |
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PR02000201803JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 180kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 180kΩ Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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DF06M-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM Max. off-state voltage: 0.6kV Load current: 1A Features of semiconductor devices: glass passivated Case: DFM Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 1.1V Electrical mounting: THT Type of bridge rectifier: single-phase |
на замовлення 3999 шт: термін постачання 21-30 дні (днів) |
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DF06S-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.6kV Load current: 1A Features of semiconductor devices: glass passivated Case: DFS Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 1.1V Electrical mounting: SMT Type of bridge rectifier: single-phase |
товар відсутній |
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DF06S-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.6kV Load current: 1A Features of semiconductor devices: glass passivated Case: DFS Kind of package: reel; tape Max. forward impulse current: 50A Max. forward voltage: 1.1V Electrical mounting: SMT Type of bridge rectifier: single-phase |
на замовлення 3014 шт: термін постачання 21-30 дні (днів) |
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DF06SA-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS Max. off-state voltage: 0.6kV Load current: 1A Features of semiconductor devices: glass passivated Case: DFS Kind of package: reel; tape Max. forward impulse current: 30A Max. forward voltage: 1.1V Electrical mounting: SMT Type of bridge rectifier: single-phase |
товар відсутній |
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RTO020F10001JTE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; THT; TO220; 10kΩ; 20W; ±5%; -55÷155°C Type of resistor: thick film Mounting: THT Case: TO220 Resistance: 10kΩ Power: 20W Tolerance: ±5% Max. operating voltage: 250V Operating temperature: -55...155°C Resistor features: needs additional heatsink Power without heatsink: 2W Recommended heatsink: thermal resistance 6,5K/W |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| BZX55B15-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 3845 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.06 грн |
| 210+ | 1.68 грн |
| 500+ | 1.49 грн |
| 630+ | 1.29 грн |
| 1730+ | 1.22 грн |
| BZX55B4V7-TR |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 13015 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 2.99 грн |
| 215+ | 1.64 грн |
| 500+ | 1.46 грн |
| 590+ | 1.37 грн |
| 1610+ | 1.3 грн |
| 10000+ | 1.25 грн |
| GRC00JG4702W00L |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 732 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.96 грн |
| 10+ | 41.83 грн |
| 30+ | 27.05 грн |
| 83+ | 25.6 грн |
| MAL204317479E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Body dimensions: Ø18x38mm
Tolerance: ±20%
Leads: axial
Service life: 10000h
Operating temperature: -25...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Body dimensions: Ø18x38mm
Tolerance: ±20%
Leads: axial
Service life: 10000h
Operating temperature: -25...85°C
товар відсутній
| GRC00JG3321E00L |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
товар відсутній
| IRF530PBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 3280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.28 грн |
| 11+ | 31.91 грн |
| 13+ | 28.65 грн |
| 37+ | 21.92 грн |
| 101+ | 20.74 грн |
| IRF530SPBF | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1660 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.52 грн |
| 10+ | 36.28 грн |
| 11+ | 31.63 грн |
| 30+ | 27.75 грн |
| 80+ | 26.36 грн |
| BZX55C10-TAP | |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 12200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.55 грн |
| 230+ | 1.53 грн |
| 500+ | 1.39 грн |
| 630+ | 1.28 грн |
| 1730+ | 1.21 грн |
| 2500+ | 1.2 грн |
| 10000+ | 1.17 грн |
| BZX55C11-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 19590 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.7 грн |
| 200+ | 1.74 грн |
| 500+ | 1.39 грн |
| 640+ | 1.27 грн |
| 1750+ | 1.2 грн |
| 10000+ | 1.16 грн |
| BZX55C12-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 4290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.47 грн |
| 200+ | 1.75 грн |
| 500+ | 1.39 грн |
| 650+ | 1.25 грн |
| 1770+ | 1.18 грн |
| MUR460-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; reel,tape; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; reel,tape; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
на замовлення 2045 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.3 грн |
| 15+ | 23.45 грн |
| 25+ | 21.02 грн |
| 48+ | 16.76 грн |
| 132+ | 15.85 грн |
| 1N4007-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: rectifying
Mounting: THT
Case: DO41
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: rectifying
Mounting: THT
Case: DO41
Capacitance: 15pF
на замовлення 27502 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 13.45 грн |
| 37+ | 9.43 грн |
| 55+ | 6.33 грн |
| 100+ | 4.74 грн |
| 500+ | 3.37 грн |
| 526+ | 1.53 грн |
| 1445+ | 1.44 грн |
| 1N4007-E3/73 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Kind of package: Ammo Pack
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: rectifying
Mounting: THT
Case: DO41
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Kind of package: Ammo Pack
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: rectifying
Mounting: THT
Case: DO41
Capacitance: 15pF
на замовлення 617 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.19 грн |
| 36+ | 9.71 грн |
| 54+ | 6.47 грн |
| 100+ | 4.83 грн |
| 500+ | 3.44 грн |
| 513+ | 1.57 грн |
| 293D476X0025D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Operating temperature: -55...125°C
Capacitors series: Tantamount
на замовлення 1084 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.72 грн |
| 10+ | 39.26 грн |
| 33+ | 24.7 грн |
| 90+ | 23.38 грн |
| 293D476X9025D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Operating temperature: -55...125°C
Capacitors series: Tantamount
на замовлення 2406 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.34 грн |
| 10+ | 45.64 грн |
| 27+ | 30.8 грн |
| 72+ | 29.07 грн |
| 500+ | 28.02 грн |
| TR3D476K025C0250 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: TR3
ESR value: 0.25Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: TR3
ESR value: 0.25Ω
товар відсутній
| VJ1206Y104KXAMT |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206Y104KXAPW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206Y104KXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 42400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.02 грн |
| 300+ | 1.32 грн |
| 900+ | 1 грн |
| 2300+ | 0.94 грн |
| 20000+ | 0.91 грн |
| MAL205752152E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 200VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 1.5mF
Operating voltage: 200V DC
Body dimensions: Ø35x50mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 200VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 1.5mF
Operating voltage: 200V DC
Body dimensions: Ø35x50mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
товар відсутній
| MAL205857152E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 40VDC; Ø22x25mm; ±20%
Tolerance: ±20%
Body dimensions: Ø22x25mm
Type of capacitor: electrolytic
Capacitance: 1.5mF
Operating voltage: 40V DC
Service life: 5000h
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 40VDC; Ø22x25mm; ±20%
Tolerance: ±20%
Body dimensions: Ø22x25mm
Type of capacitor: electrolytic
Capacitance: 1.5mF
Operating voltage: 40V DC
Service life: 5000h
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
товар відсутній
| SM6T6V8A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.4 грн |
| 55+ | 6.73 грн |
| 100+ | 5.97 грн |
| 160+ | 5.1 грн |
| 435+ | 4.82 грн |
| 1.5KE6.8A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 1190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 23.68 грн |
| 18+ | 19.77 грн |
| 52+ | 15.52 грн |
| 143+ | 14.68 грн |
| 1.5SMC6.8A-E3/9AT |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.45÷7.14V; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.45÷7.14V; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| 1.5SMC6.8A-M3/57T |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.45÷7.14V; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.45÷7.14V; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| P6SMB6.8A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.8V; 57.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.8V; 57.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
на замовлення 2411 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 16.96 грн |
| 45+ | 7.77 грн |
| 100+ | 7.14 грн |
| 135+ | 5.94 грн |
| 372+ | 5.63 грн |
| SI4800BDY-T1-E3 | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2847 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.62 грн |
| 25+ | 22.2 грн |
| 45+ | 17.9 грн |
| 124+ | 16.92 грн |
| 1N4148-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Max. forward impulse current: 2A
Kind of package: Ammo Pack
на замовлення 10071 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 9.71 грн |
| 50+ | 6.94 грн |
| 76+ | 4.61 грн |
| 121+ | 2.89 грн |
| 500+ | 1.85 грн |
| 1205+ | 0.67 грн |
| 3308+ | 0.63 грн |
| VS-HFA240NJ40CPBF |
|
Виробник: VISHAY
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 240A; TO244; screw
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.4kV
Load current: 240A
Case: TO244
Max. forward voltage: 1.5V
Max. forward impulse current: 0.9kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: HEXFRED®
Reverse recovery time: 50ns
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 240A; TO244; screw
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.4kV
Load current: 240A
Case: TO244
Max. forward voltage: 1.5V
Max. forward impulse current: 0.9kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: HEXFRED®
Reverse recovery time: 50ns
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4093.8 грн |
| VS-HFA25TB60-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 25A
Case: TO220AC
Max. forward voltage: 1.3V
Max. forward impulse current: 225A
Mounting: THT
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 23ns
Capacitance: 55pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 25A
Case: TO220AC
Max. forward voltage: 1.3V
Max. forward impulse current: 225A
Mounting: THT
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 23ns
Capacitance: 55pF
на замовлення 744 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.61 грн |
| 7+ | 127.64 грн |
| 18+ | 120.7 грн |
| 250+ | 116.54 грн |
| IRFB20N50KPBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 635 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.35 грн |
| 8+ | 104.75 грн |
| 22+ | 99.2 грн |
| SIHA20N50E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHB20N50E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHG20N50C-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 487 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.92 грн |
| 3+ | 175.5 грн |
| 6+ | 134.57 грн |
| 17+ | 126.94 грн |
| SIHG20N50E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SiHH20N50E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHP20N50E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BPW34 |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Optical power: 215mW
Dimensions: 5.4x4.3x3.2mm
Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Optical power: 215mW
Dimensions: 5.4x4.3x3.2mm
на замовлення 1191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 29 грн |
| 42+ | 19.15 грн |
| 116+ | 18.11 грн |
| BPW34S | |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Optical power: 215mW
Dimensions: 5.4x4.3x3.2mm
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Optical power: 215mW
Dimensions: 5.4x4.3x3.2mm
на замовлення 290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.3 грн |
| 13+ | 28.3 грн |
| 25+ | 26.36 грн |
| 34+ | 23.93 грн |
| 90+ | 22.41 грн |
| VBPW34FAS |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
на замовлення 310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.3 грн |
| 16+ | 22.34 грн |
| 25+ | 20.39 грн |
| 43+ | 18.94 грн |
| 100+ | 17.9 грн |
| VBPW34S |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
товар відсутній
| MAL213661101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm
Operating temperature: -55...105°C
Body dimensions: Ø10x12mm
Tolerance: ±20%
Terminal pitch: 5mm
Mounting: THT
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 50V DC
Service life: 4000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm
Operating temperature: -55...105°C
Body dimensions: Ø10x12mm
Tolerance: ±20%
Terminal pitch: 5mm
Mounting: THT
Type of capacitor: electrolytic
Capacitance: 100µF
Operating voltage: 50V DC
Service life: 4000h
на замовлення 267 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.45 грн |
| 10+ | 48 грн |
| 27+ | 30.78 грн |
| 72+ | 29.1 грн |
| VS-25F120 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.3V; 25A; cathode to stud; DO203AA,DO4
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 25A
Max. load current: 40A
Semiconductor structure: cathode to stud
Case: DO4; DO203AA
Fastening thread: 10-32UNF-2A
Mounting: screw type
Max. forward impulse current: 356A
Manufacturer series: VS-25F(R)
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.3V; 25A; cathode to stud; DO203AA,DO4
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 25A
Max. load current: 40A
Semiconductor structure: cathode to stud
Case: DO4; DO203AA
Fastening thread: 10-32UNF-2A
Mounting: screw type
Max. forward impulse current: 356A
Manufacturer series: VS-25F(R)
Kind of package: bulk
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 349.62 грн |
| 4+ | 249.03 грн |
| 9+ | 235.16 грн |
| IRF9630PBF |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Kind of package: tube
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Kind of package: tube
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
на замовлення 1090 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.68 грн |
| 7+ | 52.72 грн |
| 10+ | 46.48 грн |
| 19+ | 43.01 грн |
| 50+ | 41.62 грн |
| 52+ | 40.23 грн |
| 250+ | 38.85 грн |
| IRF9630SPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Kind of package: tube
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; TO263
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Kind of package: tube
Drain-source voltage: -200V
Drain current: -4A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; TO263
на замовлення 227 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 62.75 грн |
| 7+ | 52.72 грн |
| 10+ | 46.48 грн |
| 20+ | 40.23 грн |
| 55+ | 38.15 грн |
| IRFI9630GPBF |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Kind of package: tube
Drain-source voltage: -200V
Drain current: -2.7A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Kind of package: tube
Drain-source voltage: -200V
Drain current: -2.7A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
товар відсутній
| MMSZ4694-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
товар відсутній
| SIHJ7N65E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CRCW12060000Z0TABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C
Mounting: SMD
Case - mm: 3216
Case - inch: 1206
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.25W
Resistance: 0Ω
Tolerance: ±5%
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C
Mounting: SMD
Case - mm: 3216
Case - inch: 1206
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.25W
Resistance: 0Ω
Tolerance: ±5%
Max. operating voltage: 200V
на замовлення 149600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.37 грн |
| 1000+ | 0.41 грн |
| 4800+ | 0.17 грн |
| 13100+ | 0.16 грн |
| TSOP98456 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
товар відсутній
| BAV70-E3-08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
на замовлення 18926 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.7 грн |
| 41+ | 8.53 грн |
| 63+ | 5.52 грн |
| 100+ | 3.95 грн |
| 250+ | 3.32 грн |
| 500+ | 3 грн |
| 703+ | 1.14 грн |
| 1932+ | 1.08 грн |
| BAV70-G3-08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
товар відсутній
| BAV70-HE3-08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| BAV70-HE3-18 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| PR02000201803JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 180kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 180kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 180kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 180kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.4 грн |
| 100+ | 5 грн |
| DF06M-E3/45 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 0.6kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFM
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 0.6kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFM
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Electrical mounting: THT
Type of bridge rectifier: single-phase
на замовлення 3999 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.65 грн |
| 25+ | 14.43 грн |
| 50+ | 12.9 грн |
| 73+ | 11.03 грн |
| 201+ | 10.41 грн |
| 1000+ | 9.99 грн |
| DF06S-E3/45 | |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
товар відсутній
| DF06S-E3/77 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
на замовлення 3014 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 39.59 грн |
| 16+ | 22.2 грн |
| 25+ | 19.91 грн |
| 53+ | 15.33 грн |
| 145+ | 14.5 грн |
| DF06SA-E3/77 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Kind of package: reel; tape
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Kind of package: reel; tape
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
товар відсутній
| RTO020F10001JTE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; THT; TO220; 10kΩ; 20W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: THT
Case: TO220
Resistance: 10kΩ
Power: 20W
Tolerance: ±5%
Max. operating voltage: 250V
Operating temperature: -55...155°C
Resistor features: needs additional heatsink
Power without heatsink: 2W
Recommended heatsink: thermal resistance 6,5K/W
Category: Power resistors
Description: Resistor: thick film; THT; TO220; 10kΩ; 20W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: THT
Case: TO220
Resistance: 10kΩ
Power: 20W
Tolerance: ±5%
Max. operating voltage: 250V
Operating temperature: -55...155°C
Resistor features: needs additional heatsink
Power without heatsink: 2W
Recommended heatsink: thermal resistance 6,5K/W
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.88 грн |
| 3+ | 233.08 грн |
| 10+ | 217.12 грн |