| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BYV26C-TAP | VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Mounting: THT Case: SOD57 Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 30ns Max. forward impulse current: 30A Leakage current: 0.1mA |
на замовлення 14626 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TR | VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; SOD57; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: reel; tape Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
на замовлення 2108 шт: термін постачання 21-30 дні (днів) |
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BZX85C27-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode Kind of package: Ammo Pack Semiconductor structure: single diode Zener voltage: 27V Power dissipation: 1.3W Type of diode: Zener Mounting: THT Case: DO41 Tolerance: ±5% |
на замовлення 420 шт: термін постачання 21-30 дні (днів) |
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1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 386 шт: термін постачання 21-30 дні (днів) |
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IRF740APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 963 шт: термін постачання 21-30 дні (днів) |
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IRF740ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1551 шт: термін постачання 21-30 дні (днів) |
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IRF740LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
на замовлення 357 шт: термін постачання 21-30 дні (днів) |
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IRF740PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
на замовлення 891 шт: термін постачання 21-30 дні (днів) |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 515 шт: термін постачання 21-30 дні (днів) |
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1.5KE180A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 1746 шт: термін постачання 21-30 дні (днів) |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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1.5KE18A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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P6KE200A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE Type of diode: TVS Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
товар відсутній |
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1N4937-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 12pF Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Leakage current: 0.1mA Reverse recovery time: 200ns |
на замовлення 8455 шт: термін постачання 21-30 дні (днів) |
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1N4937-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 12pF Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Leakage current: 0.1mA Reverse recovery time: 200ns |
товар відсутній |
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SB160-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: THT Case: DO41 Max. off-state voltage: 60V Max. forward voltage: 0.65V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A |
на замовлення 3890 шт: термін постачання 21-30 дні (днів) |
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IRLL014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2908 шт: термін постачання 21-30 дні (днів) |
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IRLL110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.93A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3362 шт: термін постачання 21-30 дні (днів) |
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BYV28-100-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3.5A Max. load current: 25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.1V Leakage current: 0.15mA Reverse recovery time: 30ns |
товар відсутній |
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BZX55C3V6-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 630 шт: термін постачання 21-30 дні (днів) |
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BZX85C3V6-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.6V Mounting: THT Tolerance: ±5% Kind of package: Ammo Pack Case: DO41 Semiconductor structure: single diode |
на замовлення 8520 шт: термін постачання 21-30 дні (днів) |
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BZX584C3V6-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode |
товар відсутній |
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1N5401-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Capacitance: 30pF Kind of package: reel; tape Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Leakage current: 0.5mA |
на замовлення 3079 шт: термін постачання 21-30 дні (днів) |
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1N5404-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Capacitance: 30pF Kind of package: reel; tape Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Leakage current: 0.5mA |
на замовлення 2226 шт: термін постачання 21-30 дні (днів) |
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1N5817-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Max. forward impulse current: 25A Max. forward voltage: 0.45V |
на замовлення 7645 шт: термін постачання 21-30 дні (днів) |
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1N5817-E3/73 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ammo Pack Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: Ammo Pack Max. forward impulse current: 25A Max. forward voltage: 0.45V |
товар відсутній |
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1N5819-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Max. forward impulse current: 25A Max. forward voltage: 0.6V |
на замовлення 2595 шт: термін постачання 21-30 дні (днів) |
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1N5819-E3/73 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ammo Pack Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: Ammo Pack Max. forward impulse current: 25A Max. forward voltage: 0.6V |
на замовлення 5365 шт: термін постачання 21-30 дні (днів) |
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GL34B-E3/83 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 1.5us; DO213AA; Ufmax: 1.2V Max. forward voltage: 1.2V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 1.5µs Max. forward impulse current: 10A Leakage current: 50µA Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 100V Capacitance: 4pF Features of semiconductor devices: glass passivated Case: DO213AA Mounting: SMD |
на замовлення 8995 шт: термін постачання 21-30 дні (днів) |
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GL34G-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.5A; 1.5us; DO213AA; Ufmax: 1.2V Max. forward voltage: 1.2V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 1.5µs Max. forward impulse current: 10A Leakage current: 50µA Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.4kV Features of semiconductor devices: glass passivated Case: DO213AA Mounting: SMD |
на замовлення 2479 шт: термін постачання 21-30 дні (днів) |
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| GL34J-E3/98 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.5A; 1.5us; DO213AA; Ufmax: 1.3V Max. forward voltage: 1.3V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 1.5µs Max. forward impulse current: 10A Leakage current: 50µA Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.6kV Capacitance: 4pF Features of semiconductor devices: glass passivated Case: DO213AA Mounting: SMD |
товар відсутній |
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BAV99-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 10449 шт: термін постачання 21-30 дні (днів) |
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BAV99-G3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
товар відсутній |
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BAV99-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 570 шт: термін постачання 21-30 дні (днів) |
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BPV22NF | VISHAY |
Category: Photodiodes Description: PIN IR photodiode; THT; 940nm; 120° Mounting: THT Viewing angle: 120° Type of photoelement: PIN IR photodiode Wavelength of peak sensitivity: 940nm Active area: 7.5mm2 Reverse light current at 1klx: 85µA |
на замовлення 1831 шт: термін постачання 21-30 дні (днів) |
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SI7850DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 6.2A On-state resistance: 22mΩ Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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VJ1206Y223KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товар відсутній |
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CRCW06033M30FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.3MΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 18900 шт: термін постачання 21-30 дні (днів) |
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1N4007GP-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Type of diode: rectifying Features of semiconductor devices: glass passivated Mounting: THT Case: DO41 Capacitance: 8pF |
на замовлення 18017 шт: термін постачання 21-30 дні (днів) |
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VESD05A1-02V-G-08 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 192W Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
товар відсутній |
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SFH615A-4 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Mounting: THT Case: DIP4 Insulation voltage: 5.3kV Kind of output: transistor CTR@If: 160-320%@5mA Type of optocoupler: optocoupler Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 2.5µs Number of channels: 1 |
на замовлення 1461 шт: термін постачання 21-30 дні (днів) |
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P6KE15CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28.3A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
на замовлення 1388 шт: термін постачання 21-30 дні (днів) |
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CRCW25120000Z0THBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5% Mounting: SMD Resistance: 0Ω Tolerance: ±5% Case - mm: 6432 Case - inch: 2512 Type of resistor: thick film Power: 1W |
на замовлення 12830 шт: термін постачання 21-30 дні (днів) |
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IRF730PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
на замовлення 748 шт: термін постачання 21-30 дні (днів) |
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IRF730SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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357B0102MXB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Power: 1W Tolerance: ±20% Characteristics: linear Potentiometer series: 357 Track material: plastic Mechanical durability: 10000000 cycles Fastening thread: 3/8"x32UNEF Potentiometer features: without limiters Linearity tolerance: ±2% Shaft surface: smooth Thread length: 8mm L shaft length: 22mm Shaft diameter: 6.35mm Shaft length: 14mm |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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357B2102MAB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Power: 1W Tolerance: ±20% Characteristics: linear Potentiometer series: 357 Track material: plastic Mechanical durability: 10000000 cycles Fastening thread: 3/8"x32UNEF Electrical rotation angle: 340° Linearity tolerance: ±2% Shaft surface: smooth Thread length: 8mm L shaft length: 22mm Shaft diameter: 6.35mm Shaft length: 14mm |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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VJ1206A100KXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 3615 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±1% Power: 0.25W Operating temperature: -55...125°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 19520 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±1% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 101300 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±5% Power: 0.25W Operating temperature: -55...125°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
товар відсутній |
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CRCW1206100KJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±5% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 30998 шт: термін постачання 21-30 дні (днів) |
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SFH6156-3X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 3µs Turn-off time: 2.3µs |
на замовлення 1365 шт: термін постачання 21-30 дні (днів) |
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VS-403CNQ100PBF | VISHAY |
Category: Diode modules Description: Module: diode; double,common cathode; 100V; If: 400A; TO244; screw Type of module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 100V Load current: 400A Case: TO244 Max. forward voltage: 0.82V Max. forward impulse current: 3.3kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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BAS85-GS08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.24V Case: MiniMELF; SOD80 Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 51270 шт: термін постачання 21-30 дні (днів) |
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BAS85-GS18 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; MiniMELF,SOD80 Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.8V Case: MiniMELF; SOD80 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 5246 шт: термін постачання 21-30 дні (днів) |
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SI4840BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.9A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2748 шт: термін постачання 21-30 дні (днів) |
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NTCLE100E3472JB0 | VISHAY |
Category: THT measurement NTC thermistors Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW Type of sensor: NTC thermistor Resistance: 4.7kΩ Mounting: THT Material constant B: 3977K Operating temperature: -40...125°C Power: 0.5W |
на замовлення 1658 шт: термін постачання 21-30 дні (днів) |
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| BYV26C-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Mounting: THT
Case: SOD57
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Mounting: THT
Case: SOD57
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
на замовлення 14626 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.89 грн |
| 25+ | 17.13 грн |
| 66+ | 12.29 грн |
| 180+ | 11.62 грн |
| 2500+ | 11.45 грн |
| BYV26C-TR | |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
на замовлення 2108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 36.28 грн |
| 11+ | 32.95 грн |
| 25+ | 25.46 грн |
| 58+ | 14.01 грн |
| 158+ | 13.25 грн |
| BZX85C27-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Kind of package: Ammo Pack
Semiconductor structure: single diode
Zener voltage: 27V
Power dissipation: 1.3W
Type of diode: Zener
Mounting: THT
Case: DO41
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Kind of package: Ammo Pack
Semiconductor structure: single diode
Zener voltage: 27V
Power dissipation: 1.3W
Type of diode: Zener
Mounting: THT
Case: DO41
Tolerance: ±5%
на замовлення 420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.23 грн |
| 120+ | 3.08 грн |
| 250+ | 2.75 грн |
| 330+ | 2.44 грн |
| 1.5KE400A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 386 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 34.36 грн |
| 13+ | 28.65 грн |
| 37+ | 21.92 грн |
| 101+ | 20.74 грн |
| IRF740APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 963 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.53 грн |
| 10+ | 65.21 грн |
| 14+ | 58.27 грн |
| 38+ | 55.49 грн |
| 250+ | 54.8 грн |
| IRF740ASPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1551 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.37 грн |
| 5+ | 81.85 грн |
| 10+ | 72.14 грн |
| 13+ | 61.74 грн |
| 36+ | 58.27 грн |
| IRF740LCPBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 357 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.27 грн |
| 10+ | 51.33 грн |
| 18+ | 45.09 грн |
| 50+ | 42.31 грн |
| IRF740PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.23 грн |
| 7+ | 54.11 грн |
| 10+ | 49.25 грн |
| 19+ | 43.01 грн |
| 51+ | 40.93 грн |
| 250+ | 39.54 грн |
| IRF740SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 891 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.6 грн |
| 5+ | 85.32 грн |
| 10+ | 74.92 грн |
| 12+ | 67.29 грн |
| 33+ | 63.82 грн |
| 250+ | 62.43 грн |
| IRF740STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 1.5KE18CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 515 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.8 грн |
| 14+ | 24.97 грн |
| 25+ | 22.41 грн |
| 47+ | 17.34 грн |
| 128+ | 16.37 грн |
| 1.5KE180A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 1746 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 23.68 грн |
| 25+ | 20.67 грн |
| 49+ | 16.49 грн |
| 134+ | 15.59 грн |
| 1400+ | 14.98 грн |
| 1.5KE180CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.67 грн |
| 16+ | 22.27 грн |
| 47+ | 17.16 грн |
| 129+ | 16.23 грн |
| 1.5KE18A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.92 грн |
| 25+ | 19.77 грн |
| 52+ | 15.47 грн |
| P6KE200A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
товар відсутній
| 1N4937-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
на замовлення 8455 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.19 грн |
| 32+ | 11.1 грн |
| 38+ | 9.23 грн |
| 56+ | 6.3 грн |
| 100+ | 4.09 грн |
| 250+ | 3.73 грн |
| 335+ | 2.4 грн |
| 921+ | 2.27 грн |
| 1N4937-E3/73 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
товар відсутній
| SB160-E3/54 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
на замовлення 3890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.16 грн |
| 55+ | 6.59 грн |
| 100+ | 5.9 грн |
| 150+ | 5.46 грн |
| 405+ | 5.16 грн |
| 2000+ | 4.99 грн |
| IRLL014TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2908 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 54.53 грн |
| 18+ | 20.12 грн |
| 25+ | 19.08 грн |
| 56+ | 14.57 грн |
| 152+ | 13.8 грн |
| IRLL110TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3362 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.44 грн |
| 25+ | 17.62 грн |
| 53+ | 15.26 грн |
| 145+ | 14.43 грн |
| 2500+ | 13.87 грн |
| BYV28-100-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3.5A; Ammo Pack; Ifsm: 90A; SOD64; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3.5A
Max. load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 30ns
товар відсутній
| BZX55C3V6-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.29 грн |
| 230+ | 1.57 грн |
| 500+ | 1.25 грн |
| BZX85C3V6-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
на замовлення 8520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.05 грн |
| 130+ | 2.76 грн |
| 250+ | 2.46 грн |
| 360+ | 2.25 грн |
| 980+ | 2.13 грн |
| 5000+ | 2.05 грн |
| BZX584C3V6-G3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
товар відсутній
| 1N5401-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
на замовлення 3079 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.63 грн |
| 15+ | 23.79 грн |
| 16+ | 22.61 грн |
| 25+ | 19.01 грн |
| 100+ | 16.51 грн |
| 113+ | 7.14 грн |
| 310+ | 6.73 грн |
| 1N5404-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
на замовлення 2226 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.63 грн |
| 15+ | 23.79 грн |
| 16+ | 22.61 грн |
| 25+ | 19.01 грн |
| 100+ | 16.51 грн |
| 117+ | 6.87 грн |
| 322+ | 6.52 грн |
| 1N5817-E3/54 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.45V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.45V
на замовлення 7645 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.4 грн |
| 60+ | 5.9 грн |
| 100+ | 5.2 грн |
| 175+ | 4.62 грн |
| 480+ | 4.37 грн |
| 1N5817-E3/73 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ammo Pack
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: Ammo Pack
Max. forward impulse current: 25A
Max. forward voltage: 0.45V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ammo Pack
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: Ammo Pack
Max. forward impulse current: 25A
Max. forward voltage: 0.45V
товар відсутній
| 1N5819-E3/54 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
на замовлення 2595 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.7 грн |
| 60+ | 6.04 грн |
| 100+ | 5.27 грн |
| 165+ | 4.88 грн |
| 455+ | 4.61 грн |
| 2000+ | 4.44 грн |
| 1N5819-E3/73 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ammo Pack
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: Ammo Pack
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ammo Pack
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: Ammo Pack
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
на замовлення 5365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.7 грн |
| 60+ | 6.04 грн |
| 100+ | 5.27 грн |
| 170+ | 4.83 грн |
| 460+ | 4.57 грн |
| 3000+ | 4.44 грн |
| GL34B-E3/83 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 1.5us; DO213AA; Ufmax: 1.2V
Max. forward voltage: 1.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 100V
Capacitance: 4pF
Features of semiconductor devices: glass passivated
Case: DO213AA
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 1.5us; DO213AA; Ufmax: 1.2V
Max. forward voltage: 1.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 100V
Capacitance: 4pF
Features of semiconductor devices: glass passivated
Case: DO213AA
Mounting: SMD
на замовлення 8995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 10.34 грн |
| 95+ | 8.67 грн |
| 255+ | 8.19 грн |
| GL34G-E3/98 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 1.5us; DO213AA; Ufmax: 1.2V
Max. forward voltage: 1.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Case: DO213AA
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 1.5us; DO213AA; Ufmax: 1.2V
Max. forward voltage: 1.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Case: DO213AA
Mounting: SMD
на замовлення 2479 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 10.34 грн |
| 100+ | 9.16 грн |
| 105+ | 7.93 грн |
| 280+ | 7.49 грн |
| GL34J-E3/98 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.5A; 1.5us; DO213AA; Ufmax: 1.3V
Max. forward voltage: 1.3V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Capacitance: 4pF
Features of semiconductor devices: glass passivated
Case: DO213AA
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.5A; 1.5us; DO213AA; Ufmax: 1.3V
Max. forward voltage: 1.3V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 10A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Capacitance: 4pF
Features of semiconductor devices: glass passivated
Case: DO213AA
Mounting: SMD
товар відсутній
| BAV99-E3-08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 10449 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.17 грн |
| 230+ | 1.52 грн |
| 500+ | 1.35 грн |
| 695+ | 1.16 грн |
| 1900+ | 1.1 грн |
| BAV99-G3-08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
товар відсутній
| BAV99-HE3-08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.44 грн |
| 125+ | 2.86 грн |
| 350+ | 2.29 грн |
| BPV22NF |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; THT; 940nm; 120°
Mounting: THT
Viewing angle: 120°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Reverse light current at 1klx: 85µA
Category: Photodiodes
Description: PIN IR photodiode; THT; 940nm; 120°
Mounting: THT
Viewing angle: 120°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Reverse light current at 1klx: 85µA
на замовлення 1831 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 53.79 грн |
| 13+ | 27.26 грн |
| 25+ | 23.93 грн |
| 100+ | 23.24 грн |
| SI7850DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 6.2A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 6.2A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 113.55 грн |
| 10+ | 92.26 грн |
| 17+ | 48.56 грн |
| 46+ | 45.78 грн |
| VJ1206Y223KXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| CRCW06033M30FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.3MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.3MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 18900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.76 грн |
| 500+ | 0.85 грн |
| 1000+ | 0.51 грн |
| 5000+ | 0.2 грн |
| 1N4007GP-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Mounting: THT
Case: DO41
Capacitance: 8pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Mounting: THT
Case: DO41
Capacitance: 8pF
на замовлення 18017 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.78 грн |
| 9+ | 39.82 грн |
| 25+ | 26.5 грн |
| 100+ | 19.91 грн |
| 124+ | 6.52 грн |
| 339+ | 6.17 грн |
| VESD05A1-02V-G-08 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 192W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 192W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
товар відсутній
| SFH615A-4 | |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: THT
Case: DIP4
Insulation voltage: 5.3kV
Kind of output: transistor
CTR@If: 160-320%@5mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 2.5µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: THT
Case: DIP4
Insulation voltage: 5.3kV
Kind of output: transistor
CTR@If: 160-320%@5mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 2.5µs
Number of channels: 1
на замовлення 1461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.65 грн |
| 24+ | 14.5 грн |
| 50+ | 12 грн |
| 76+ | 10.68 грн |
| 208+ | 10.06 грн |
| 1000+ | 9.85 грн |
| P6KE15CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
на замовлення 1388 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.66 грн |
| 28+ | 12.49 грн |
| 80+ | 10.13 грн |
| 219+ | 9.57 грн |
| CRCW25120000Z0THBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5%
Mounting: SMD
Resistance: 0Ω
Tolerance: ±5%
Case - mm: 6432
Case - inch: 2512
Type of resistor: thick film
Power: 1W
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5%
Mounting: SMD
Resistance: 0Ω
Tolerance: ±5%
Case - mm: 6432
Case - inch: 2512
Type of resistor: thick film
Power: 1W
на замовлення 12830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.77 грн |
| 110+ | 3.19 грн |
| 490+ | 1.66 грн |
| 1340+ | 1.57 грн |
| IRF730PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 748 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.99 грн |
| 10+ | 44.6 грн |
| 23+ | 35.86 грн |
| 62+ | 33.85 грн |
| IRF730SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 63.5 грн |
| 10+ | 54.11 грн |
| 19+ | 43.7 грн |
| 51+ | 40.93 грн |
| 357B0102MXB251S22 |
|
Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Characteristics: linear
Potentiometer series: 357
Track material: plastic
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Potentiometer features: without limiters
Linearity tolerance: ±2%
Shaft surface: smooth
Thread length: 8mm
L shaft length: 22mm
Shaft diameter: 6.35mm
Shaft length: 14mm
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Characteristics: linear
Potentiometer series: 357
Track material: plastic
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Potentiometer features: without limiters
Linearity tolerance: ±2%
Shaft surface: smooth
Thread length: 8mm
L shaft length: 22mm
Shaft diameter: 6.35mm
Shaft length: 14mm
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1958 грн |
| 2+ | 1718.95 грн |
| 50+ | 1691.2 грн |
| 357B2102MAB251S22 |
|
Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Characteristics: linear
Potentiometer series: 357
Track material: plastic
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Shaft surface: smooth
Thread length: 8mm
L shaft length: 22mm
Shaft diameter: 6.35mm
Shaft length: 14mm
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Characteristics: linear
Potentiometer series: 357
Track material: plastic
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Shaft surface: smooth
Thread length: 8mm
L shaft length: 22mm
Shaft diameter: 6.35mm
Shaft length: 14mm
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1916.91 грн |
| 2+ | 1682.87 грн |
| VJ1206A100KXAAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 3615 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 26.74 грн |
| 100+ | 9.85 грн |
| 180+ | 4.54 грн |
| 490+ | 4.29 грн |
| CRCW1206100KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 19520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.61 грн |
| 260+ | 1.36 грн |
| 1000+ | 0.8 грн |
| 1270+ | 0.63 грн |
| 3490+ | 0.6 грн |
| CRCW1206100KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 101300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.43 грн |
| 600+ | 0.6 грн |
| 1000+ | 0.47 грн |
| 3900+ | 0.21 грн |
| 10600+ | 0.2 грн |
| CRCW1206100KJNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
товар відсутній
| CRCW1206100KJNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 30998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.25 грн |
| 700+ | 0.57 грн |
| 1000+ | 0.45 грн |
| 4000+ | 0.2 грн |
| 5000+ | 0.19 грн |
| 15000+ | 0.18 грн |
| SFH6156-3X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
на замовлення 1365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 48.56 грн |
| 18+ | 19.77 грн |
| 77+ | 10.47 грн |
| 211+ | 9.92 грн |
| VS-403CNQ100PBF |
|
Виробник: VISHAY
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 400A; TO244; screw
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 100V
Load current: 400A
Case: TO244
Max. forward voltage: 0.82V
Max. forward impulse current: 3.3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 400A; TO244; screw
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 100V
Load current: 400A
Case: TO244
Max. forward voltage: 0.82V
Max. forward impulse current: 3.3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4367.96 грн |
| BAS85-GS08 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.24V
Case: MiniMELF; SOD80
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.24V
Case: MiniMELF; SOD80
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 51270 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.57 грн |
| 110+ | 3.3 грн |
| 310+ | 2.63 грн |
| 840+ | 2.48 грн |
| 10000+ | 2.39 грн |
| BAS85-GS18 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; MiniMELF,SOD80
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: MiniMELF; SOD80
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; MiniMELF,SOD80
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: MiniMELF; SOD80
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 5246 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.64 грн |
| 110+ | 3.3 грн |
| 320+ | 2.53 грн |
| 875+ | 2.39 грн |
| SI4840BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.9A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.9A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2748 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.97 грн |
| 8+ | 47.86 грн |
| 20+ | 40.23 грн |
| 55+ | 38.15 грн |
| 500+ | 36.56 грн |
| NTCLE100E3472JB0 |
|
Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
на замовлення 1658 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.43 грн |
| 14+ | 25.67 грн |
| 46+ | 17.55 грн |
| 126+ | 16.58 грн |