| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| BFC233821472 | VISHAY |
 Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 630VDC; 310VAC Type of capacitor: polypropylene Capacitance: 4.7nF Operating voltage: 310V AC; 630V DC Terminal pitch: 10mm Tolerance: ±20% Mounting: THT Body dimensions: 12.5x4x10mm |
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| BFC233861472 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 4.7nF; THT; ±10%; 7.5mm; 1kVDC; 300VAC Type of capacitor: polypropylene Capacitance: 4.7nF Operating voltage: 300V AC; 1kV DC Terminal pitch: 7.5mm Tolerance: ±10% Mounting: THT Body dimensions: 10x6x11.5mm |
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BFC233868101 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC Type of capacitor: polypropylene Capacitance: 4.7nF Operating voltage: 300V AC; 1kV DC Body dimensions: 12.5x11x5mm Mounting: THT Terminal pitch: 10mm Tolerance: ±20% |
на замовлення 751 шт: термін постачання 21-30 дні (днів) |
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MAL213639101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 100V DC Body dimensions: Ø12.5x20mm Terminal pitch: 5mm Tolerance: ±20% Service life: 7000h Operating temperature: -55...105°C |
на замовлення 766 шт: термін постачання 21-30 дні (днів) |
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SI3552DV-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A Kind of package: reel; tape Drain-source voltage: 30/-30V Drain current: 2.5/-1.8A On-state resistance: 360/175mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.15W Polarisation: unipolar Gate charge: 3.6/3.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -7...8A Mounting: SMD Case: TSOP6 |
на замовлення 2999 шт: термін постачання 21-30 дні (днів) |
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| Si3552DV-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A Kind of package: reel; tape Drain-source voltage: 30/-30V Drain current: 2.5/-1.8A On-state resistance: 360/175mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.15W Polarisation: unipolar Gate charge: 3.6/3.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -7...8A Mounting: SMD Case: TSOP6 |
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| SI8497DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A Mounting: SMD Type of transistor: P-MOSFET Power dissipation: 13W Polarisation: unipolar Kind of package: reel; tape Gate charge: 49nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Drain-source voltage: -30V Drain current: -13A On-state resistance: 0.12Ω |
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| SI8499DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -16A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.12Ω Pulsed drain current: -20A Power dissipation: 13W Gate charge: 30nC Polarisation: unipolar |
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| SI8409DB-T1-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 65mΩ Pulsed drain current: -25A Drain current: -6.3A Polarisation: unipolar Gate charge: 26nC Drain-source voltage: -30V Gate-source voltage: ±12V Type of transistor: P-MOSFET |
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| SI8429DB-T1-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 6.25W On-state resistance: 98mΩ Pulsed drain current: -25A Drain current: -11.7A Polarisation: unipolar Gate charge: 32nC Drain-source voltage: -8V Gate-source voltage: ±5V Type of transistor: P-MOSFET |
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| SI8902AEDB-T2-E1 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A Mounting: SMD Power dissipation: 5.7W Polarisation: unipolar Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 40A Drain-source voltage: 24V Drain current: 11A On-state resistance: 37mΩ Type of transistor: N-MOSFET x2 |
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| SI8489EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -5.4A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 82mΩ Pulsed drain current: -20A Power dissipation: 1.8W Gate charge: 27nC Polarisation: unipolar |
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| SI8819EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A Mounting: SMD Technology: TrenchFET® Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.28Ω Pulsed drain current: -15A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar |
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| IRFIB5N65APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.1A Pulsed drain current: 21A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 930mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced |
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| IRF530STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRF9520STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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CRCW0805220KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C Operating temperature: -55...155°C Power: 0.125W Mounting: SMD Case - mm: 2012 Case - inch: 0805 Type of resistor: thick film Resistance: 220kΩ Tolerance: ±1% Max. operating voltage: 150V |
на замовлення 9704 шт: термін постачання 21-30 дні (днів) |
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CRCW0805220KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C Operating temperature: -55...155°C Power: 0.125W Mounting: SMD Case - mm: 2012 Case - inch: 0805 Type of resistor: thick film Resistance: 220kΩ Tolerance: ±1% Max. operating voltage: 150V |
на замовлення 7100 шт: термін постачання 21-30 дні (днів) |
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CRCW0805220KJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C Operating temperature: -55...155°C Power: 0.125W Mounting: SMD Case - mm: 2012 Case - inch: 0805 Type of resistor: thick film Resistance: 220kΩ Tolerance: ±5% Max. operating voltage: 150V |
на замовлення 14500 шт: термін постачання 21-30 дні (днів) |
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CRCW0805220KJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C Operating temperature: -55...155°C Power: 0.125W Mounting: SMD Case - mm: 2012 Case - inch: 0805 Type of resistor: thick film Resistance: 220kΩ Tolerance: ±5% Max. operating voltage: 150V |
на замовлення 3539 шт: термін постачання 21-30 дні (днів) |
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IRF740ALPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 996 шт: термін постачання 21-30 дні (днів) |
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IRF740ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 798 шт: термін постачання 21-30 дні (днів) |
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IRF740BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 23A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 23A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
на замовлення 889 шт: термін постачання 21-30 дні (днів) |
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| IRF740PBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
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| IRF740STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
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BZT52C24-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
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| IHLP6767GZER6R8M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 6.8uH; 19A; 8.37mΩ; ±20%; 17.15x17.15x7mm; IHLP Mounting: SMD Operating temperature: -55...125°C Manufacturer series: IHLP Resistance: 8.37mΩ Tolerance: ±20% Body dimensions: 17.15x17.15x7mm Operating current: 19A Inductance: 6.8µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
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| IRFZ44RPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhanced |
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| IRFZ44SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFZ44STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI4463BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.7A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -13.7A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI4463CDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -18.6A Pulsed drain current: -60A Power dissipation: 5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Gate charge: 162nC Kind of package: reel; tape Kind of channel: enhanced |
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| MAL219367221E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 220uF; 450VDC; Ø30x35mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 220µF Operating voltage: 450V DC Body dimensions: Ø30x35mm Terminal pitch: 10mm Tolerance: ±20% Service life: 5000h Operating temperature: -40...105°C |
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1.5SMC540A-M3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 513÷567V; unidirectional; SMC; reel,tape; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 459V Breakdown voltage: 513...567V Semiconductor structure: unidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
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1.5SMC540A-M3/9AT | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 513÷567V; unidirectional; SMC; reel,tape; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 459V Breakdown voltage: 513...567V Semiconductor structure: unidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
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NTCLE100E3333JB0 | VISHAY |
Category: THT measurement NTC thermistors Description: NTC thermistor; 33kΩ; THT; 4090K; -40÷125°C; 500mW Power: 0.5W Mounting: THT Operating temperature: -40...125°C Type of sensor: NTC thermistor Resistance: 33kΩ Material constant B: 4090K |
на замовлення 1801 шт: термін постачання 21-30 дні (днів) |
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VJ0805Y683KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 68nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 68nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 4100 шт: термін постачання 21-30 дні (днів) |
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| IRFZ10PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 40A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced |
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| IRFZ20PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 15A Pulsed drain current: 60A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced |
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IRFZ24PBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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| IRFZ40PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhanced |
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| IRFZ48PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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| IRFZ48RSPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFZ48SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFZ48STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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VJ1206Y104KXBRW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 100nF; 100V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| BFC238310684 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 680nF; 31x23x13mm; THT; ±5%; 27.5mm Type of capacitor: polypropylene Capacitance: 0.68µF Body dimensions: 31x23x13mm Mounting: THT Tolerance: ±5% Terminal pitch: 27.5mm Operating voltage: 200V AC; 400V DC Climate class: 55/110/56 Leads dimensions: L 3.5mm Leads: 2pin |
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| BFC238320684 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 680nF; 31x25x15mm; THT; ±5%; 27.5mm Operating voltage: 220V AC; 630V DC Type of capacitor: polypropylene Leads: 2pin Capacitance: 0.68µF Climate class: 55/110/56 Mounting: THT Terminal pitch: 27.5mm Tolerance: ±5% Body dimensions: 31x25x15mm Leads dimensions: L 3.5mm |
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| BFC238330104 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 100nF; 26x19.5x10mm; THT; ±5%; 22.5mm Type of capacitor: polypropylene Capacitance: 0.1µF Operating voltage: 350V AC; 1kV DC Tolerance: ±5% Mounting: THT Terminal pitch: 22.5mm Leads: 2pin Body dimensions: 26x19.5x10mm Climate class: 55/110/56 |
товар відсутній |
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BFC238330153 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 15nF; 17.5x11x5mm; THT; ±5%; 15mm; 1kVDC Mounting: THT Body dimensions: 17.5x11x5mm Terminal pitch: 15mm Leads: 2pin Climate class: 55/110/56 Operating voltage: 350V AC; 1kV DC Capacitance: 15nF Type of capacitor: polypropylene Leads dimensions: L 3.5mm Tolerance: ±5% |
на замовлення 701 шт: термін постачання 21-30 дні (днів) |
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| BFC238331104 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 100nF; 26x19.5x10mm; THT; ±5%; 22.5mm Type of capacitor: polypropylene Capacitance: 0.1µF Operating voltage: 350V AC; 1kV DC Tolerance: ±5% Mounting: THT Terminal pitch: 22.5mm Leads: 2pin Body dimensions: 26x19.5x10mm Climate class: 55/110/56 |
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| BFC238342222 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 2.2nF; 17.5x11x5mm; THT; ±5%; 15mm Type of capacitor: polypropylene Capacitance: 2.2nF Operating voltage: 500V AC; 1.4kV DC Terminal pitch: 15mm Tolerance: ±5% Body dimensions: 17.5x11x5mm Climate class: 55/110/56 Mounting: THT Leads: 2pin |
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| BFC238370222 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 2.2nF; 26x15.5x6mm; THT; ±5%; 22.5mm Leads: 2pin Capacitance: 2.2nF Operating voltage: 900V AC; 2.5kV DC Climate class: 55/110/56 Mounting: THT Terminal pitch: 22.5mm Tolerance: ±5% Body dimensions: 26x15.5x6mm Type of capacitor: polypropylene |
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| BFC238370333 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 33nF; 31x23x13mm; THT; ±5%; 27.5mm Leads: 2pin Capacitance: 33nF Operating voltage: 900V AC; 2.5kV DC Climate class: 55/110/56 Mounting: THT Terminal pitch: 27.5mm Tolerance: ±5% Body dimensions: 31x23x13mm Type of capacitor: polypropylene |
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| TR3C475K035C0600 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Mounting: SMD Case: C Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: TR3 ESR value: 0.6Ω |
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| TSMF1030 | VISHAY |
Category: IR LEDs Description: IR transmitter; 1.9mm; Yoke; 890nm; transparent; 35mW; 17°; SMD Case: Yoke Mounting: SMD Dimensions: 2.5x2x2.7mm Operating voltage: 1.3...1.5V LED diameter: 1.9mm Type of diode: IR transmitter Wavelength: 890nm LED lens: transparent LED current: 100mA Viewing angle: 17° LED version: reverse mount Optical power: 35mW |
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| IRL540SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRL540STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
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BZG05C12-M3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 12V; 20mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Zener current: 20mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
товар відсутній |
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BZG05C16-M3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 16V; 15mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Zener current: 15mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
на замовлення 1348 шт: термін постачання 21-30 дні (днів) |
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| BFC233821472 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 630VDC; 310VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 310V AC; 630V DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x4x10mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 630VDC; 310VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 310V AC; 630V DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x4x10mm
товар відсутній
| BFC233861472 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±10%; 7.5mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Terminal pitch: 7.5mm
Tolerance: ±10%
Mounting: THT
Body dimensions: 10x6x11.5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±10%; 7.5mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Terminal pitch: 7.5mm
Tolerance: ±10%
Mounting: THT
Body dimensions: 10x6x11.5mm
товар відсутній
| BFC233868101 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x11x5mm
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 4.7nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 4.7nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 12.5x11x5mm
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±20%
на замовлення 751 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.93 грн |
| 11+ | 34.53 грн |
| 47+ | 17.23 грн |
| 128+ | 16.26 грн |
| MAL213639101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x20mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 7000h
Operating temperature: -55...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x20mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 7000h
Operating temperature: -55...105°C
на замовлення 766 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.01 грн |
| 10+ | 72.65 грн |
| 15+ | 56.16 грн |
| 40+ | 53.1 грн |
| SI3552DV-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
On-state resistance: 360/175mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 3.6/3.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7...8A
Mounting: SMD
Case: TSOP6
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
On-state resistance: 360/175mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 3.6/3.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7...8A
Mounting: SMD
Case: TSOP6
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 42.47 грн |
| 11+ | 34.18 грн |
| 25+ | 28.92 грн |
| 35+ | 23.04 грн |
| 96+ | 21.8 грн |
| 250+ | 21.45 грн |
| 500+ | 21.17 грн |
| 1000+ | 20.97 грн |
| Si3552DV-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
On-state resistance: 360/175mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 3.6/3.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7...8A
Mounting: SMD
Case: TSOP6
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
On-state resistance: 360/175mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 3.6/3.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7...8A
Mounting: SMD
Case: TSOP6
товар відсутній
| SI8497DB-T2-E1 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A
Mounting: SMD
Type of transistor: P-MOSFET
Power dissipation: 13W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 49nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -13A
On-state resistance: 0.12Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A
Mounting: SMD
Type of transistor: P-MOSFET
Power dissipation: 13W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 49nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -13A
On-state resistance: 0.12Ω
товар відсутній
| SI8499DB-T2-E1 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 30nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 30nC
Polarisation: unipolar
товар відсутній
| SI8409DB-T1-E1 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A
Technology: TrenchFET®
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.77W
On-state resistance: 65mΩ
Pulsed drain current: -25A
Drain current: -6.3A
Polarisation: unipolar
Gate charge: 26nC
Drain-source voltage: -30V
Gate-source voltage: ±12V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A
Technology: TrenchFET®
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.77W
On-state resistance: 65mΩ
Pulsed drain current: -25A
Drain current: -6.3A
Polarisation: unipolar
Gate charge: 26nC
Drain-source voltage: -30V
Gate-source voltage: ±12V
Type of transistor: P-MOSFET
товар відсутній
| SI8429DB-T1-E1 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A
Technology: TrenchFET®
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 6.25W
On-state resistance: 98mΩ
Pulsed drain current: -25A
Drain current: -11.7A
Polarisation: unipolar
Gate charge: 32nC
Drain-source voltage: -8V
Gate-source voltage: ±5V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -11.7A; Idm: -25A
Technology: TrenchFET®
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 6.25W
On-state resistance: 98mΩ
Pulsed drain current: -25A
Drain current: -11.7A
Polarisation: unipolar
Gate charge: 32nC
Drain-source voltage: -8V
Gate-source voltage: ±5V
Type of transistor: P-MOSFET
товар відсутній
| SI8902AEDB-T2-E1 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A
Mounting: SMD
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Drain-source voltage: 24V
Drain current: 11A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A
Mounting: SMD
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Drain-source voltage: 24V
Drain current: 11A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET x2
товар відсутній
| SI8489EDB-T2-E1 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -5.4A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 82mΩ
Pulsed drain current: -20A
Power dissipation: 1.8W
Gate charge: 27nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -5.4A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 82mΩ
Pulsed drain current: -20A
Power dissipation: 1.8W
Gate charge: 27nC
Polarisation: unipolar
товар відсутній
| SI8819EDB-T2-E1 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A
Mounting: SMD
Technology: TrenchFET®
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.28Ω
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A
Mounting: SMD
Technology: TrenchFET®
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.28Ω
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
товар відсутній
| IRFIB5N65APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.1A
Pulsed drain current: 21A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 930mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.1A
Pulsed drain current: 21A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 930mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF530STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF9520STRRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CRCW0805220KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Power: 0.125W
Mounting: SMD
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Resistance: 220kΩ
Tolerance: ±1%
Max. operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Power: 0.125W
Mounting: SMD
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Resistance: 220kΩ
Tolerance: ±1%
Max. operating voltage: 150V
на замовлення 9704 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.47 грн |
| 500+ | 1.53 грн |
| 1000+ | 0.83 грн |
| 2700+ | 0.78 грн |
| 5000+ | 0.76 грн |
| CRCW0805220KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Power: 0.125W
Mounting: SMD
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Resistance: 220kΩ
Tolerance: ±1%
Max. operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Power: 0.125W
Mounting: SMD
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Resistance: 220kΩ
Tolerance: ±1%
Max. operating voltage: 150V
на замовлення 7100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.55 грн |
| 700+ | 0.53 грн |
| 1000+ | 0.43 грн |
| 4300+ | 0.19 грн |
| 5000+ | 0.18 грн |
| CRCW0805220KJNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Power: 0.125W
Mounting: SMD
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Resistance: 220kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Power: 0.125W
Mounting: SMD
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Resistance: 220kΩ
Tolerance: ±5%
Max. operating voltage: 150V
на замовлення 14500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 1.24 грн |
| 600+ | 0.59 грн |
| 1000+ | 0.47 грн |
| 2000+ | 0.4 грн |
| 5000+ | 0.38 грн |
| CRCW0805220KJNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Power: 0.125W
Mounting: SMD
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Resistance: 220kΩ
Tolerance: ±5%
Max. operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 220kΩ; 0.125W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Power: 0.125W
Mounting: SMD
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Resistance: 220kΩ
Tolerance: ±5%
Max. operating voltage: 150V
на замовлення 3539 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.68 грн |
| 500+ | 0.78 грн |
| 1000+ | 0.52 грн |
| IRF740ALPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 996 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.77 грн |
| 10+ | 93.41 грн |
| 11+ | 76.11 грн |
| 29+ | 71.96 грн |
| IRF740ASTRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 163.94 грн |
| 10+ | 131.47 грн |
| 14+ | 57.43 грн |
| 39+ | 54.66 грн |
| IRF740BPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 23A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 23A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 889 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.77 грн |
| 10+ | 61.58 грн |
| 16+ | 50.51 грн |
| 44+ | 47.74 грн |
| IRF740PBF-BE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF740STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BZT52C24-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
товар відсутній
| IHLP6767GZER6R8M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 6.8uH; 19A; 8.37mΩ; ±20%; 17.15x17.15x7mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 8.37mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 19A
Inductance: 6.8µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 6.8uH; 19A; 8.37mΩ; ±20%; 17.15x17.15x7mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 8.37mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 19A
Inductance: 6.8µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
товар відсутній
| IRFZ44RPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFZ44SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFZ44STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4463BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.7A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -13.7A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.7A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -13.7A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4463CDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18.6A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18.6A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MAL219367221E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 220uF; 450VDC; Ø30x35mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 220µF
Operating voltage: 450V DC
Body dimensions: Ø30x35mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 220uF; 450VDC; Ø30x35mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 220µF
Operating voltage: 450V DC
Body dimensions: Ø30x35mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
товар відсутній
| 1.5SMC540A-M3/57T |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 513÷567V; unidirectional; SMC; reel,tape; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 459V
Breakdown voltage: 513...567V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 513÷567V; unidirectional; SMC; reel,tape; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 459V
Breakdown voltage: 513...567V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| 1.5SMC540A-M3/9AT |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 513÷567V; unidirectional; SMC; reel,tape; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 459V
Breakdown voltage: 513...567V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 513÷567V; unidirectional; SMC; reel,tape; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 459V
Breakdown voltage: 513...567V
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| NTCLE100E3333JB0 |
|
Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 33kΩ; THT; 4090K; -40÷125°C; 500mW
Power: 0.5W
Mounting: THT
Operating temperature: -40...125°C
Type of sensor: NTC thermistor
Resistance: 33kΩ
Material constant B: 4090K
Category: THT measurement NTC thermistors
Description: NTC thermistor; 33kΩ; THT; 4090K; -40÷125°C; 500mW
Power: 0.5W
Mounting: THT
Operating temperature: -40...125°C
Type of sensor: NTC thermistor
Resistance: 33kΩ
Material constant B: 4090K
на замовлення 1801 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.3 грн |
| 10+ | 40.62 грн |
| 40+ | 20.22 грн |
| 109+ | 19.12 грн |
| VJ0805Y683KXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 68nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 68nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 68nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 68nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 4100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.36 грн |
| 400+ | 0.95 грн |
| 1000+ | 0.69 грн |
| 1300+ | 0.65 грн |
| 3400+ | 0.62 грн |
| 4000+ | 0.6 грн |
| IRFZ10PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFZ20PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 15A; Idm: 60A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFZ24PBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.75 грн |
| 10+ | 65.6 грн |
| 29+ | 28.23 грн |
| 78+ | 26.71 грн |
| IRFZ40PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFZ48PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFZ48RSPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFZ48SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFZ48STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VJ1206Y104KXBRW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| BFC238310684 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 31x23x13mm; THT; ±5%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 0.68µF
Body dimensions: 31x23x13mm
Mounting: THT
Tolerance: ±5%
Terminal pitch: 27.5mm
Operating voltage: 200V AC; 400V DC
Climate class: 55/110/56
Leads dimensions: L 3.5mm
Leads: 2pin
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 31x23x13mm; THT; ±5%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 0.68µF
Body dimensions: 31x23x13mm
Mounting: THT
Tolerance: ±5%
Terminal pitch: 27.5mm
Operating voltage: 200V AC; 400V DC
Climate class: 55/110/56
Leads dimensions: L 3.5mm
Leads: 2pin
товар відсутній
| BFC238320684 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 31x25x15mm; THT; ±5%; 27.5mm
Operating voltage: 220V AC; 630V DC
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 0.68µF
Climate class: 55/110/56
Mounting: THT
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x25x15mm
Leads dimensions: L 3.5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 31x25x15mm; THT; ±5%; 27.5mm
Operating voltage: 220V AC; 630V DC
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 0.68µF
Climate class: 55/110/56
Mounting: THT
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x25x15mm
Leads dimensions: L 3.5mm
товар відсутній
| BFC238330104 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 26x19.5x10mm; THT; ±5%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 22.5mm
Leads: 2pin
Body dimensions: 26x19.5x10mm
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 26x19.5x10mm; THT; ±5%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 22.5mm
Leads: 2pin
Body dimensions: 26x19.5x10mm
Climate class: 55/110/56
товар відсутній
| BFC238330153 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 17.5x11x5mm; THT; ±5%; 15mm; 1kVDC
Mounting: THT
Body dimensions: 17.5x11x5mm
Terminal pitch: 15mm
Leads: 2pin
Climate class: 55/110/56
Operating voltage: 350V AC; 1kV DC
Capacitance: 15nF
Type of capacitor: polypropylene
Leads dimensions: L 3.5mm
Tolerance: ±5%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 17.5x11x5mm; THT; ±5%; 15mm; 1kVDC
Mounting: THT
Body dimensions: 17.5x11x5mm
Terminal pitch: 15mm
Leads: 2pin
Climate class: 55/110/56
Operating voltage: 350V AC; 1kV DC
Capacitance: 15nF
Type of capacitor: polypropylene
Leads dimensions: L 3.5mm
Tolerance: ±5%
на замовлення 701 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.24 грн |
| 10+ | 47.88 грн |
| 21+ | 38.54 грн |
| 58+ | 36.4 грн |
| BFC238331104 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 26x19.5x10mm; THT; ±5%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 22.5mm
Leads: 2pin
Body dimensions: 26x19.5x10mm
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 26x19.5x10mm; THT; ±5%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 22.5mm
Leads: 2pin
Body dimensions: 26x19.5x10mm
Climate class: 55/110/56
товар відсутній
| BFC238342222 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 17.5x11x5mm; THT; ±5%; 15mm
Type of capacitor: polypropylene
Capacitance: 2.2nF
Operating voltage: 500V AC; 1.4kV DC
Terminal pitch: 15mm
Tolerance: ±5%
Body dimensions: 17.5x11x5mm
Climate class: 55/110/56
Mounting: THT
Leads: 2pin
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 17.5x11x5mm; THT; ±5%; 15mm
Type of capacitor: polypropylene
Capacitance: 2.2nF
Operating voltage: 500V AC; 1.4kV DC
Terminal pitch: 15mm
Tolerance: ±5%
Body dimensions: 17.5x11x5mm
Climate class: 55/110/56
Mounting: THT
Leads: 2pin
товар відсутній
| BFC238370222 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 26x15.5x6mm; THT; ±5%; 22.5mm
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Mounting: THT
Terminal pitch: 22.5mm
Tolerance: ±5%
Body dimensions: 26x15.5x6mm
Type of capacitor: polypropylene
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 26x15.5x6mm; THT; ±5%; 22.5mm
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Mounting: THT
Terminal pitch: 22.5mm
Tolerance: ±5%
Body dimensions: 26x15.5x6mm
Type of capacitor: polypropylene
товар відсутній
| BFC238370333 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 31x23x13mm; THT; ±5%; 27.5mm
Leads: 2pin
Capacitance: 33nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Mounting: THT
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x23x13mm
Type of capacitor: polypropylene
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 31x23x13mm; THT; ±5%; 27.5mm
Leads: 2pin
Capacitance: 33nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Mounting: THT
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x23x13mm
Type of capacitor: polypropylene
товар відсутній
| TR3C475K035C0600 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: TR3
ESR value: 0.6Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: TR3
ESR value: 0.6Ω
товар відсутній
| TSMF1030 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 1.9mm; Yoke; 890nm; transparent; 35mW; 17°; SMD
Case: Yoke
Mounting: SMD
Dimensions: 2.5x2x2.7mm
Operating voltage: 1.3...1.5V
LED diameter: 1.9mm
Type of diode: IR transmitter
Wavelength: 890nm
LED lens: transparent
LED current: 100mA
Viewing angle: 17°
LED version: reverse mount
Optical power: 35mW
Category: IR LEDs
Description: IR transmitter; 1.9mm; Yoke; 890nm; transparent; 35mW; 17°; SMD
Case: Yoke
Mounting: SMD
Dimensions: 2.5x2x2.7mm
Operating voltage: 1.3...1.5V
LED diameter: 1.9mm
Type of diode: IR transmitter
Wavelength: 890nm
LED lens: transparent
LED current: 100mA
Viewing angle: 17°
LED version: reverse mount
Optical power: 35mW
товар відсутній
| IRL540SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRL540STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BZG05C12-M3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 20mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 20mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 20mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 20mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
товар відсутній
| BZG05C16-M3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; 15mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Zener current: 15mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; 15mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Zener current: 15mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
на замовлення 1348 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.26 грн |
| 40+ | 9.13 грн |
| 100+ | 8.1 грн |
| 120+ | 6.86 грн |
| 320+ | 6.49 грн |