| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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CRCW12061M30FKEA | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 1.3MΩ; 0.25W; ±1%; -55÷125°C Tolerance: ±1% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C Max. operating voltage: 200V Resistance: 1.3MΩ Power: 0.25W Type of resistor: thick film |
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CRCW12061M30JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.3MΩ; 0.25W; ±5%; -55÷155°C Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...155°C Max. operating voltage: 200V Resistance: 1.3MΩ Power: 0.25W Type of resistor: thick film |
на замовлення 9700 шт: термін постачання 21-30 дні (днів) |
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CRCW12061M47FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.47MΩ; 0.25W; ±1%; -55÷155°C Tolerance: ±1% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...155°C Max. operating voltage: 200V Resistance: 1.47MΩ Power: 0.25W Type of resistor: thick film |
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CRCW12061M50FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.5MΩ; 0.25W; ±1%; -55÷155°C Tolerance: ±1% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...155°C Max. operating voltage: 200V Resistance: 1.5MΩ Power: 0.25W Type of resistor: thick film |
на замовлення 15700 шт: термін постачання 21-30 дні (днів) |
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1.5KE82A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
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1.5KE82CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 779 шт: термін постачання 21-30 дні (днів) |
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GRC00DD1021CTNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 16V DC Terminal pitch: 5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 10x16mm |
на замовлення 478 шт: термін постачання 21-30 дні (днів) |
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GP10J-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 50uA Case: DO41 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 600V Features of semiconductor devices: glass passivated Reverse recovery time: 3µs Capacitance: 8pF Type of diode: rectifying Max. forward impulse current: 30A Max. forward voltage: 1.1V Load current: 1A Leakage current: 50µA |
на замовлення 10980 шт: термін постачання 21-30 дні (днів) |
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| GP10Y-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 1A; reel,tape; Ifsm: 25A; DO41; 3us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: reel; tape Max. forward impulse current: 25A Case: DO41 Max. forward voltage: 1.3V Leakage current: 50µA Reverse recovery time: 3µs |
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| BFC236955333 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polyester; 33nF; 220VAC; 400VDC; 10mm; ±10%; THT Mounting: THT Terminal pitch: 10mm Tolerance: ±10% Body dimensions: 12.5x9.4x4.6mm Max. operating voltage: 220V AC; 400V DC Type of capacitor: polyester Capacitance: 33nF |
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| IRFP21N60LPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 84A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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| IRFP22N60KPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 88A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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| IRFP26N60LPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 100A Power dissipation: 470W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
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B40C800DM-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 65V; If: 0.9A; Ifsm: 45A; DFM Max. off-state voltage: 65V Max. forward impulse current: 45A Case: DFM Kind of package: tube Features of semiconductor devices: glass passivated Electrical mounting: THT Max. forward voltage: 1V Load current: 0.9A Type of bridge rectifier: single-phase |
на замовлення 2729 шт: термін постачання 21-30 дні (днів) |
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| IRFP17N50LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 64A Power dissipation: 220W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
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| IHLP6767GZER101M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 100uH; 5A; 105mΩ; ±20%; 17.15x17.15x7mm; IHLP Mounting: SMD Operating temperature: -55...125°C Manufacturer series: IHLP Resistance: 0.105Ω Tolerance: ±20% Body dimensions: 17.15x17.15x7mm Operating current: 5A Inductance: 0.1mH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
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GBU4A-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 798 шт: термін постачання 21-30 дні (днів) |
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GBU4A-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 398 шт: термін постачання 21-30 дні (днів) |
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| IRF540STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRF540STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
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| VJ0201G104KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 16V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0201 Case - mm: 0603 Operating temperature: -55...85°C |
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VJ0402Y104KXJPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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SA60A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; reel,tape Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA60A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA60CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; reel,tape Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA60CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; Ammo Pack Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
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AC03000001007JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø4.8x13mm; -50÷250°C Type of resistor: wire-wound Mounting: THT Resistance: 0.1Ω Power: 3W Tolerance: ±5% Body dimensions: Ø4.8x13mm Leads dimensions: Ø0.8x25mm Operating temperature: -50...250°C Resistor features: non-flammable Temperature coefficient: 80ppm/°C Leads: axial |
на замовлення 1836 шт: термін постачання 21-30 дні (днів) |
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RTO020FR0100JTE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; THT; TO220; 100mΩ; 20W; ±5%; -55÷155°C Mounting: THT Case: TO220 Resistance: 0.1Ω Operating temperature: -55...155°C Tolerance: ±5% Type of resistor: thick film Max. operating voltage: 250V Resistor features: needs additional heatsink Recommended heatsink: thermal resistance 6,5K/W Power without heatsink: 2W Power: 20W |
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| VS-4ESH01HM3/86A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 24pF Case: SMPC Max. forward voltage: 0.79V Max. forward impulse current: 130A Leakage current: 10µA Kind of package: reel; tape |
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| MAL205943331E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø25x50mm; ±20% Mounting: SNAP-IN Terminal pitch: 10mm Operating temperature: -40...105°C Tolerance: ±20% Body dimensions: Ø25x50mm Type of capacitor: electrolytic Capacitance: 330µF Operating voltage: 250V DC Service life: 10000h |
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| MAL205952151E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 150uF; 200VDC; Ø22x30mm; ±20% Mounting: SNAP-IN Terminal pitch: 10mm Operating temperature: -40...105°C Tolerance: ±20% Body dimensions: Ø22x30mm Type of capacitor: electrolytic Capacitance: 150µF Operating voltage: 200V DC Service life: 10000h |
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GSC00AF2211VARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 8x10mm Height: 10mm |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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| GIB2404-E3/81 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 16A; 35ns; D2PAK; Ufmax: 895mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 16A Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 125A Max. forward voltage: 0.895V Leakage current: 0.5mA |
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4N32 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 500%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms |
на замовлення 973 шт: термін постачання 21-30 дні (днів) |
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IRFR9220PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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| IRFR9220TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFR9220TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9220TRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI4056ADY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W Kind of package: reel; tape Drain-source voltage: 100V Drain current: 8.3A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 29nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: SO8 |
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VJ0603A151FXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±1%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 260 шт: термін постачання 21-30 дні (днів) |
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VJ0603A151JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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VJ0603A151JXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 10500 шт: термін постачання 21-30 дні (днів) |
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VJ0603A151JXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 150pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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| VJ1111D100JXRAJ | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 1.5kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1111 Case - mm: 3028 Operating temperature: -55...125°C |
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BZX55C3V0-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 25730 шт: термін постачання 21-30 дні (днів) |
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WSL2512R3300FEA | VISHAY |
Category: SMD resistors Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.33Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 1623 шт: термін постачання 21-30 дні (днів) |
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| IRF510STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
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IRF830ALPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
на замовлення 998 шт: термін постачання 21-30 дні (днів) |
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| IRF830ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IRF830BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| IRFP048PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Pulsed drain current: 290A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IRF840BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.7A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| IRF840LCLPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| IRF840LCSPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IRF840STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IRF9530STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W Mounting: SMD Case: D2PAK; TO263 Polarisation: unipolar On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 88W Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -48A Drain-source voltage: -100V Drain current: -12A |
товар відсутній |
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| IRF9530STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W Mounting: SMD Case: D2PAK; TO263 Polarisation: unipolar On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 88W Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -48A Drain-source voltage: -100V Drain current: -12A |
товар відсутній |
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| IRFB13N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| CRCW12061M30FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.3MΩ; 0.25W; ±1%; -55÷125°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Max. operating voltage: 200V
Resistance: 1.3MΩ
Power: 0.25W
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.3MΩ; 0.25W; ±1%; -55÷125°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Max. operating voltage: 200V
Resistance: 1.3MΩ
Power: 0.25W
Type of resistor: thick film
товар відсутній
| CRCW12061M30JNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.3MΩ; 0.25W; ±5%; -55÷155°C
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Max. operating voltage: 200V
Resistance: 1.3MΩ
Power: 0.25W
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.3MΩ; 0.25W; ±5%; -55÷155°C
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Max. operating voltage: 200V
Resistance: 1.3MΩ
Power: 0.25W
Type of resistor: thick film
на замовлення 9700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.99 грн |
| 500+ | 1.08 грн |
| 1000+ | 0.69 грн |
| 2500+ | 0.32 грн |
| 5000+ | 0.29 грн |
| CRCW12061M47FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.47MΩ; 0.25W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Max. operating voltage: 200V
Resistance: 1.47MΩ
Power: 0.25W
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.47MΩ; 0.25W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Max. operating voltage: 200V
Resistance: 1.47MΩ
Power: 0.25W
Type of resistor: thick film
товар відсутній
| CRCW12061M50FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.5MΩ; 0.25W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Max. operating voltage: 200V
Resistance: 1.5MΩ
Power: 0.25W
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.5MΩ; 0.25W; ±1%; -55÷155°C
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Max. operating voltage: 200V
Resistance: 1.5MΩ
Power: 0.25W
Type of resistor: thick film
на замовлення 15700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.19 грн |
| 500+ | 1.19 грн |
| 1000+ | 0.76 грн |
| 2300+ | 0.35 грн |
| 5000+ | 0.32 грн |
| 1.5KE82A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
товар відсутній
| 1.5KE82CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 779 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.34 грн |
| 17+ | 21.24 грн |
| 49+ | 16.74 грн |
| 134+ | 15.85 грн |
| GRC00DD1021CTNL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x16mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x16mm
на замовлення 478 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 31.67 грн |
| 26+ | 13.77 грн |
| 50+ | 6.92 грн |
| 100+ | 5.88 грн |
| 151+ | 5.33 грн |
| 415+ | 5.05 грн |
| GP10J-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 50uA
Case: DO41
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 600V
Features of semiconductor devices: glass passivated
Reverse recovery time: 3µs
Capacitance: 8pF
Type of diode: rectifying
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Load current: 1A
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 50uA
Case: DO41
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 600V
Features of semiconductor devices: glass passivated
Reverse recovery time: 3µs
Capacitance: 8pF
Type of diode: rectifying
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Load current: 1A
Leakage current: 50µA
на замовлення 10980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.14 грн |
| 35+ | 10.79 грн |
| 100+ | 9.69 грн |
| 105+ | 7.46 грн |
| 290+ | 7.05 грн |
| GP10Y-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; reel,tape; Ifsm: 25A; DO41; 3us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 25A
Case: DO41
Max. forward voltage: 1.3V
Leakage current: 50µA
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; reel,tape; Ifsm: 25A; DO41; 3us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 25A
Case: DO41
Max. forward voltage: 1.3V
Leakage current: 50µA
Reverse recovery time: 3µs
товар відсутній
| BFC236955333 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 33nF; 220VAC; 400VDC; 10mm; ±10%; THT
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±10%
Body dimensions: 12.5x9.4x4.6mm
Max. operating voltage: 220V AC; 400V DC
Type of capacitor: polyester
Capacitance: 33nF
Category: THT Film Capacitors
Description: Capacitor: polyester; 33nF; 220VAC; 400VDC; 10mm; ±10%; THT
Mounting: THT
Terminal pitch: 10mm
Tolerance: ±10%
Body dimensions: 12.5x9.4x4.6mm
Max. operating voltage: 220V AC; 400V DC
Type of capacitor: polyester
Capacitance: 33nF
товар відсутній
| IRFP21N60LPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFP22N60KPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFP26N60LPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| B40C800DM-E3/45 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 65V; If: 0.9A; Ifsm: 45A; DFM
Max. off-state voltage: 65V
Max. forward impulse current: 45A
Case: DFM
Kind of package: tube
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Max. forward voltage: 1V
Load current: 0.9A
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 65V; If: 0.9A; Ifsm: 45A; DFM
Max. off-state voltage: 65V
Max. forward impulse current: 45A
Case: DFM
Kind of package: tube
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Max. forward voltage: 1V
Load current: 0.9A
Type of bridge rectifier: single-phase
на замовлення 2729 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 18.41 грн |
| 25+ | 14.25 грн |
| 65+ | 12.37 грн |
| 178+ | 11.7 грн |
| IRFP17N50LPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IHLP6767GZER101M11 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 100uH; 5A; 105mΩ; ±20%; 17.15x17.15x7mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 0.105Ω
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 5A
Inductance: 0.1mH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 100uH; 5A; 105mΩ; ±20%; 17.15x17.15x7mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 0.105Ω
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 5A
Inductance: 0.1mH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
товар відсутній
| GBU4A-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.81 грн |
| 7+ | 56.74 грн |
| 19+ | 44.34 грн |
| 50+ | 41.92 грн |
| GBU4A-E3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 398 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.65 грн |
| 20+ | 40.13 грн |
| 55+ | 38.06 грн |
| 250+ | 37.43 грн |
| IRF540STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF540STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VJ0201G104KXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
товар відсутній
| VJ0402Y104KXJPW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| SA60A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA60A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA60CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA60CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| AC03000001007JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø4.8x13mm; -50÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -50...250°C
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø4.8x13mm; -50÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -50...250°C
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads: axial
на замовлення 1836 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 48.06 грн |
| 16+ | 22 грн |
| 50+ | 13.98 грн |
| 74+ | 10.93 грн |
| 202+ | 10.31 грн |
| RTO020FR0100JTE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; THT; TO220; 100mΩ; 20W; ±5%; -55÷155°C
Mounting: THT
Case: TO220
Resistance: 0.1Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Type of resistor: thick film
Max. operating voltage: 250V
Resistor features: needs additional heatsink
Recommended heatsink: thermal resistance 6,5K/W
Power without heatsink: 2W
Power: 20W
Category: Power resistors
Description: Resistor: thick film; THT; TO220; 100mΩ; 20W; ±5%; -55÷155°C
Mounting: THT
Case: TO220
Resistance: 0.1Ω
Operating temperature: -55...155°C
Tolerance: ±5%
Type of resistor: thick film
Max. operating voltage: 250V
Resistor features: needs additional heatsink
Recommended heatsink: thermal resistance 6,5K/W
Power without heatsink: 2W
Power: 20W
товар відсутній
| VS-4ESH01HM3/86A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 4A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 24pF
Case: SMPC
Max. forward voltage: 0.79V
Max. forward impulse current: 130A
Leakage current: 10µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 4A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 24pF
Case: SMPC
Max. forward voltage: 0.79V
Max. forward impulse current: 130A
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
| MAL205943331E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø25x50mm; ±20%
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø25x50mm
Type of capacitor: electrolytic
Capacitance: 330µF
Operating voltage: 250V DC
Service life: 10000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø25x50mm; ±20%
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø25x50mm
Type of capacitor: electrolytic
Capacitance: 330µF
Operating voltage: 250V DC
Service life: 10000h
товар відсутній
| MAL205952151E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 200VDC; Ø22x30mm; ±20%
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø22x30mm
Type of capacitor: electrolytic
Capacitance: 150µF
Operating voltage: 200V DC
Service life: 10000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 200VDC; Ø22x30mm; ±20%
Mounting: SNAP-IN
Terminal pitch: 10mm
Operating temperature: -40...105°C
Tolerance: ±20%
Body dimensions: Ø22x30mm
Type of capacitor: electrolytic
Capacitance: 150µF
Operating voltage: 200V DC
Service life: 10000h
товар відсутній
| GSC00AF2211VARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
на замовлення 480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 18.03 грн |
| 50+ | 10.79 грн |
| 100+ | 8.23 грн |
| 130+ | 6.5 грн |
| 340+ | 6.16 грн |
| GIB2404-E3/81 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 125A
Max. forward voltage: 0.895V
Leakage current: 0.5mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 125A
Max. forward voltage: 0.895V
Leakage current: 0.5mA
товар відсутній
| 4N32 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 500%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 500%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 973 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 26.83 грн |
| 16+ | 22.28 грн |
| 49+ | 16.47 грн |
| 134+ | 15.57 грн |
| IRFR9220PBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.53 грн |
| 11+ | 33.97 грн |
| 25+ | 30.03 грн |
| 30+ | 26.72 грн |
| 82+ | 25.26 грн |
| IRFR9220TRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9220TRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9220TRRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4056ADY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 8.3A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 29nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 8.3A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 29nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
товар відсутній
| VJ0603A151FXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±1%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±1%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.05 грн |
| 120+ | 2.95 грн |
| VJ0603A151JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
товар відсутній
| VJ0603A151JXBAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 10500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.98 грн |
| 100+ | 5.48 грн |
| 320+ | 2.54 грн |
| 870+ | 2.4 грн |
| VJ0603A151JXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
товар відсутній
| VJ1111D100JXRAJ |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
товар відсутній
| BZX55C3V0-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 25730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.58 грн |
| 210+ | 1.68 грн |
| 500+ | 1.35 грн |
| 670+ | 1.2 грн |
| 1830+ | 1.14 грн |
| 10000+ | 1.12 грн |
| WSL2512R3300FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 1623 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38 грн |
| 20+ | 20.97 грн |
| 100+ | 15.5 грн |
| 500+ | 13.84 грн |
| 1000+ | 12.73 грн |
| IRF510STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF830ALPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.5 грн |
| 10+ | 65.04 грн |
| 16+ | 52.59 грн |
| 42+ | 49.82 грн |
| IRF830ASPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF830ASTRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF830BPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFP048PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF840ASTRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF840BPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF840LCLPBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF840LCSPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF840STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF9530STRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 88W
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -48A
Drain-source voltage: -100V
Drain current: -12A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 88W
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -48A
Drain-source voltage: -100V
Drain current: -12A
товар відсутній
| IRF9530STRRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 88W
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -48A
Drain-source voltage: -100V
Drain current: -12A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 88W
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -48A
Drain-source voltage: -100V
Drain current: -12A
товар відсутній
| IRFB13N50APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній