Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MBA02040C1183FC100 | VISHAY |
![]() Description: Resistor: metal film; THT; 118kΩ; 400mW; ±1%; 0; Ø0.5x29mm; 50ppm/°C Type of resistor: metal film Resistance: 118kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Temperature coefficient: 50ppm/°C Quantity in set/package: 1000pcs. Manufacturer series: 0 Operating temperature: -55...155°C Mounting: THT Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Leads: axial |
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В кошику од. на суму грн. | ||||||||||||||
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RCA0603140KFHEA | VISHAY |
![]() Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 140kΩ Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC Q200 Case - mm: 1608 Case - inch: 0603 Temperature coefficient: 100ppm/°C Max. operating voltage: 75V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RCA0603140KFKEA | VISHAY |
![]() Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 140kΩ Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC Q200 Case - mm: 1608 Case - inch: 0603 Temperature coefficient: 100ppm/°C Max. operating voltage: 75V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RCA0603140KFKEC | VISHAY |
![]() Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 140kΩ Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC Q200 Case - mm: 1608 Case - inch: 0603 Temperature coefficient: 100ppm/°C Max. operating voltage: 75V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CMB02070X1403FB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0207 MELF; 140kΩ; 1W; ±1%; Ø2.2x5.8mm Mounting: SMD Power: 1W Operating temperature: -55...125°C Conform to the norm: AEC Q200 Roll diameter max.: 330mm Type of resistor: carbon film Case: 0207 MELF Resistance: 140kΩ Tolerance: ±1% Body dimensions: Ø2.2x5.8mm Max. operating voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SI3407DV-T1-BE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -25A Power dissipation: 4.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 32.7mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SS24-E3/52T | VISHAY |
![]() ![]() Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel; 750pcs. Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: 7 inch reel Quantity in set/package: 750pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBPC602-E4/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 175A Version: square Case: GBPC6 Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1V |
на замовлення 413 шт: термін постачання 21-30 дні (днів) |
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GBPC604-E4/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 175A Version: square Case: GBPC6 Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1V |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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PRV6SAABBXB25102KA | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 1kΩ; 1.5W; ±10%; 3.17mm; linear Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Power: 1.5W Tolerance: ±10% Shaft diameter: 3.17mm Characteristics: linear Leads: solder lugs Shaft length: 12.5mm Electrical rotation angle: 270° Operating temperature: -55...125°C Temperature coefficient: 150ppm/°C Track material: cermet Mechanical rotation angle: 300° IP rating: IP67 Mechanical durability: 50000 cycles |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PRV6SAABGXB25102KA | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 1kΩ; 1.5W; ±10%; 3.17mm; linear Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Power: 1.5W Tolerance: ±10% Shaft diameter: 3.17mm Characteristics: linear Leads: solder lugs Shaft length: 16mm Electrical rotation angle: 270° Operating temperature: -55...125°C Temperature coefficient: 150ppm/°C Track material: cermet Mechanical rotation angle: 300° IP rating: IP67 Mechanical durability: 50000 cycles |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RCA12060000ZSEA | VISHAY |
![]() Description: Resistor: thick film; 1206; 0Ω; 250mW; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 0Ω Power: 0.25W Max. operating voltage: 200V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC Q200 |
на замовлення 4710 шт: термін постачання 21-30 дні (днів) |
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IRF9Z14SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRF9Z14PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRF9Z10PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRF9Z14STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRF9Z20PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.7A Pulsed drain current: -39A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRF9Z30PBF | VISHAY |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -18A Pulsed drain current: -60A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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VS-8EWF12S-M3 | VISHAY |
![]() Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; Ir: 4mA Mounting: SMD Max. off-state voltage: 1.2kV Max. forward voltage: 1.3V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 270ns Max. forward impulse current: 150A Leakage current: 4mA Kind of package: tube Type of diode: rectifying Quantity in set/package: 75pcs. Features of semiconductor devices: fast switching; glass passivated Case: DPAK |
на замовлення 539 шт: термін постачання 21-30 дні (днів) |
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VS-8TQ100-M3 | VISHAY |
![]() Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220-2; Ufmax: 0.58V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 0.58V Max. forward impulse current: 850A Kind of package: tube Quantity in set/package: 50pcs. |
на замовлення 367 шт: термін постачання 21-30 дні (днів) |
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VS-8TQ100S-M3 | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: tube Quantity in set/package: 50pcs. Max. forward voltage: 0.58V Max. forward impulse current: 230A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-8TQ100SHM3 | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: tube Quantity in set/package: 50pcs. Max. forward voltage: 0.58V Application: automotive industry Max. forward impulse current: 850A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
VS-8TQ100STRL-M3 | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs. Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
VS-8TQ100STRLHM3 | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs. Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: 13 inch reel Quantity in set/package: 800pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
VS-8TQ100STRR-M3 | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs. Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
VS-8TQ100STRRHM3 | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs. Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: 13 inch reel Quantity in set/package: 800pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GRC00DE4711HTNL | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 470uF; 50VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 10x20mm |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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VJ0603A120FXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 12pF; 50V; C0G (NP0); ±1%; SMD; 0603 Type of capacitor: ceramic Capacitance: 12pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VJ0603Y104KXBCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 100nF; 100V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 1886 шт: термін постачання 21-30 дні (днів) |
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020010030060020 | VISHAY |
![]() Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD Mounting: SMD LED colour: yellow Type of diode: power LED Wavelength: 583...595nm Luminosity: 9000...18000(typ)-35500mcd LED current: 70mA Viewing angle: 11° Dimensions: 2.3x2.3x2.8mm Front: convex Case: Gull wing Operating voltage: 1.9...2.7V DC |
на замовлення 3281 шт: термін постачання 21-30 дні (днів) |
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VLMY1300-GS08 | VISHAY |
![]() Description: LED; yellow; SMD; 0603; 28÷180mcd; 1.6x0.8x0.8mm; 65°; 30mA Type of diode: LED LED colour: yellow Mounting: SMD Case: 0603 Luminosity: 28...180mcd Dimensions: 1.6x0.8x0.8mm Viewing angle: 65° LED current: 30mA Wavelength: 584.5...597nm Front: flat Operating voltage: 1.8...2.4V DC |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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RCA0805390RFKEA | VISHAY |
![]() Description: Resistor: thick film; 0805; 390Ω; 125mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 390Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 Operating temperature: -55...155°C |
на замовлення 4720 шт: термін постачання 21-30 дні (днів) |
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RCA06034K70FKEA | VISHAY |
![]() Description: Resistor: thick film; 0603; 4.7kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 4.7kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 Operating temperature: -55...155°C |
на замовлення 4620 шт: термін постачання 21-30 дні (днів) |
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SIS892ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 6.1nC |
на замовлення 2984 шт: термін постачання 21-30 дні (днів) |
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SI7615ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -80A; 33W Mounting: SMD Kind of package: reel; tape Case: PowerPAK® 1212-8 Drain-source voltage: -20V Drain current: -35A On-state resistance: 4.4mΩ Type of transistor: P-MOSFET Power dissipation: 33W Polarisation: unipolar Gate charge: 183nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -80A |
на замовлення 3199 шт: термін постачання 21-30 дні (днів) |
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SIS443DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -35A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -80A |
на замовлення 2913 шт: термін постачання 21-30 дні (днів) |
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SI7153DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -100A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: -100A |
на замовлення 4504 шт: термін постачання 21-30 дні (днів) |
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SISH625DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: -80A |
на замовлення 5671 шт: термін постачання 21-30 дні (днів) |
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SIS413DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: -70A |
на замовлення 5574 шт: термін постачання 21-30 дні (днів) |
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SISS27DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A Polarisation: unipolar Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 9mΩ Drain current: -50A Drain-source voltage: -30V Case: PowerPAK® 1212-8 Mounting: SMD Gate charge: 0.14µC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -200A Power dissipation: 36W |
на замовлення 1091 шт: термін постачання 21-30 дні (днів) |
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SISS61DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W Power dissipation: 42.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 231nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -200A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: -20V Drain current: -89.6A On-state resistance: 9.8mΩ Type of transistor: P-MOSFET |
на замовлення 5819 шт: термін постачання 21-30 дні (днів) |
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SiS406DN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.2A Power dissipation: 2.3W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 50A |
на замовлення 2979 шт: термін постачання 21-30 дні (днів) |
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SISS27ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A Polarisation: unipolar Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 8.1mΩ Drain current: -50A Drain-source voltage: -30V Case: PowerPAK® 1212-8 Mounting: SMD Gate charge: 117nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -200A Power dissipation: 36W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6SMB8.2A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 8.2V; 49.6A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.02V Breakdown voltage: 8.2V Max. forward impulse current: 49.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® |
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P6SMB8.2A-E3/5B | VISHAY |
![]() Description: Diode: TVS; 600W; 8.2V; 49.6A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.02V Breakdown voltage: 8.2V Max. forward impulse current: 49.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: 13 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® |
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В кошику од. на суму грн. | ||||||||||||||
SUD20N10-66L-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16.9A Pulsed drain current: 25A Power dissipation: 41.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
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TCLT1013 | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; LSOP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: LSOP4 Conform to the norm: UL; VDE Turn-on time: 9µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: TCLT101. |
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RCA1206332RFKEA | VISHAY |
![]() Description: Resistor: thick film; 1206; 332Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 332Ω Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Max. operating voltage: 200V Conform to the norm: AEC Q200 |
на замовлення 4980 шт: термін постачання 21-30 дні (днів) |
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CRCW25122K00FKEG | VISHAY |
![]() Description: Resistor: thick film; SMD; 2512; 2kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 2kΩ Power: 1W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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SI4401DDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -16.1A; Idm: -50A; 4W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -16.1A Pulsed drain current: -50A Power dissipation: 4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1488 шт: термін постачання 21-30 дні (днів) |
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SI4401BDY-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; 2.9W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.3A Power dissipation: 2.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
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SI4401FDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Pulsed drain current: -80A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 18.3mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2520 шт: термін постачання 21-30 дні (днів) |
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CRCW040251R0FKTDBC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 51Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 51Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 9800 шт: термін постачання 21-30 дні (днів) |
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VJ0201Y102KXJCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 1nF; 16V; X7R; ±10%; SMD; 0201 Type of capacitor: ceramic Capacitance: 1nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0201 Case - mm: 0603 Operating temperature: -55...125°C |
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VJ0603A102KXJCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 1nF; 16V; C0G (NP0); ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 1nF Operating voltage: 16V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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В кошику од. на суму грн. | ||||||||||||||
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RCA08050000ZSEA | VISHAY |
![]() Description: Resistor: thick film; 0805; 125mW; -55÷155°C; 100ppm/°C Operating temperature: -55...155°C Power: 0.125W Temperature coefficient: 100ppm/°C Max. operating voltage: 150V Conform to the norm: AEC Q200 Case - mm: 2012 Case - inch: 0805 Type of resistor: thick film |
на замовлення 4900 шт: термін постачання 21-30 дні (днів) |
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RCA1206301KFKEA | VISHAY |
![]() Description: Resistor: thick film; 1206; 301kΩ; 250mW; ±1%; -55÷155°C; 100ppm/°C Case - inch: 1206 Max. operating voltage: 200V Power: 0.25W Operating temperature: -55...155°C Conform to the norm: AEC Q200 Case - mm: 3216 Type of resistor: thick film Resistance: 301kΩ Tolerance: ±1% Temperature coefficient: 100ppm/°C |
на замовлення 4950 шт: термін постачання 21-30 дні (днів) |
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RCA0402301KFKED | VISHAY |
![]() Description: Resistor: thick film; 0402; 301kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 301kΩ Power: 63mW Tolerance: ±1% Operating temperature: -55...155°C Max. operating voltage: 50V Conform to the norm: AEC Q200 Case - mm: 1005 Case - inch: 0402 Temperature coefficient: 100ppm/°C |
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В кошику од. на суму грн. | ||||||||||||||
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RCA0603301KFKEA | VISHAY |
![]() Description: Resistor: thick film; 0603; 301kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 301kΩ Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Max. operating voltage: 75V Conform to the norm: AEC Q200 Case - mm: 1608 Case - inch: 0603 Temperature coefficient: 100ppm/°C |
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В кошику од. на суму грн. | ||||||||||||||
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RCA0603301KFKEC | VISHAY |
![]() Description: Resistor: thick film; 0603; 301kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 301kΩ Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Max. operating voltage: 75V Conform to the norm: AEC Q200 Case - mm: 1608 Case - inch: 0603 Temperature coefficient: 100ppm/°C |
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В кошику од. на суму грн. |
MBA02040C1183FC100 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 118kΩ; 400mW; ±1%; 0; Ø0.5x29mm; 50ppm/°C
Type of resistor: metal film
Resistance: 118kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Temperature coefficient: 50ppm/°C
Quantity in set/package: 1000pcs.
Manufacturer series: 0
Operating temperature: -55...155°C
Mounting: THT
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 118kΩ; 400mW; ±1%; 0; Ø0.5x29mm; 50ppm/°C
Type of resistor: metal film
Resistance: 118kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Temperature coefficient: 50ppm/°C
Quantity in set/package: 1000pcs.
Manufacturer series: 0
Operating temperature: -55...155°C
Mounting: THT
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Leads: axial
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RCA0603140KFHEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 140kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 140kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
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RCA0603140KFKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 140kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 140kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
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RCA0603140KFKEC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 140kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; 0603; 140kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 140kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
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CMB02070X1403FB700 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 140kΩ; 1W; ±1%; Ø2.2x5.8mm
Mounting: SMD
Power: 1W
Operating temperature: -55...125°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Type of resistor: carbon film
Case: 0207 MELF
Resistance: 140kΩ
Tolerance: ±1%
Body dimensions: Ø2.2x5.8mm
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 140kΩ; 1W; ±1%; Ø2.2x5.8mm
Mounting: SMD
Power: 1W
Operating temperature: -55...125°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Type of resistor: carbon film
Case: 0207 MELF
Resistance: 140kΩ
Tolerance: ±1%
Body dimensions: Ø2.2x5.8mm
Max. operating voltage: 500V
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SI3407DV-T1-BE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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SS24-E3/52T | ![]() |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel; 750pcs.
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 7 inch reel; 750pcs.
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
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GBPC602-E4/51 |
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Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: square
Case: GBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: square
Case: GBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1V
на замовлення 413 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 211.27 грн |
10+ | 91.96 грн |
27+ | 86.60 грн |
GBPC604-E4/51 |
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Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: square
Case: GBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: square
Case: GBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1V
на замовлення 113 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 195.59 грн |
10+ | 91.96 грн |
27+ | 86.60 грн |
PRV6SAABBXB25102KA |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1.5W
Tolerance: ±10%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 12.5mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1.5W
Tolerance: ±10%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 12.5mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
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PRV6SAABGXB25102KA |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1.5W
Tolerance: ±10%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 16mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1.5W
Tolerance: ±10%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 16mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
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RCA12060000ZSEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 0Ω; 250mW; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 0Ω
Power: 0.25W
Max. operating voltage: 200V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 0Ω; 250mW; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 0Ω
Power: 0.25W
Max. operating voltage: 200V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
на замовлення 4710 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
130+ | 3.22 грн |
160+ | 2.51 грн |
180+ | 2.23 грн |
500+ | 1.58 грн |
1000+ | 1.38 грн |
1480+ | 0.61 грн |
4050+ | 0.57 грн |
IRF9Z14SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9Z14PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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IRF9Z10PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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IRF9Z14STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9Z20PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.7A
Pulsed drain current: -39A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.7A
Pulsed drain current: -39A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
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IRF9Z30PBF | ![]() |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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VS-8EWF12S-M3 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; Ir: 4mA
Mounting: SMD
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 270ns
Max. forward impulse current: 150A
Leakage current: 4mA
Kind of package: tube
Type of diode: rectifying
Quantity in set/package: 75pcs.
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; Ir: 4mA
Mounting: SMD
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.3V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 270ns
Max. forward impulse current: 150A
Leakage current: 4mA
Kind of package: tube
Type of diode: rectifying
Quantity in set/package: 75pcs.
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
на замовлення 539 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 165.06 грн |
15+ | 62.07 грн |
41+ | 59.01 грн |
VS-8TQ100-M3 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220-2; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 0.58V
Max. forward impulse current: 850A
Kind of package: tube
Quantity in set/package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220-2; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 0.58V
Max. forward impulse current: 850A
Kind of package: tube
Quantity in set/package: 50pcs.
на замовлення 367 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 88.31 грн |
10+ | 65.90 грн |
21+ | 42.91 грн |
58+ | 40.62 грн |
VS-8TQ100S-M3 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward voltage: 0.58V
Max. forward impulse current: 230A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward voltage: 0.58V
Max. forward impulse current: 230A
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VS-8TQ100SHM3 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward voltage: 0.58V
Application: automotive industry
Max. forward impulse current: 850A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward voltage: 0.58V
Application: automotive industry
Max. forward impulse current: 850A
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VS-8TQ100STRL-M3 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-8TQ100STRLHM3 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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VS-8TQ100STRR-M3 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-8TQ100STRRHM3 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 8A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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GRC00DE4711HTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x20mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x20mm
на замовлення 261 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.55 грн |
20+ | 19.39 грн |
50+ | 10.96 грн |
100+ | 8.97 грн |
VJ0603A120FXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 12pF; 50V; C0G (NP0); ±1%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 12pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 12pF; 50V; C0G (NP0); ±1%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 12pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
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VJ0603Y104KXBCW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 100V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 100V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 1886 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
278+ | 1.49 грн |
1000+ | 1.02 грн |
1139+ | 0.79 грн |
020010030060020 |
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Виробник: VISHAY
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD
Mounting: SMD
LED colour: yellow
Type of diode: power LED
Wavelength: 583...595nm
Luminosity: 9000...18000(typ)-35500mcd
LED current: 70mA
Viewing angle: 11°
Dimensions: 2.3x2.3x2.8mm
Front: convex
Case: Gull wing
Operating voltage: 1.9...2.7V DC
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD
Mounting: SMD
LED colour: yellow
Type of diode: power LED
Wavelength: 583...595nm
Luminosity: 9000...18000(typ)-35500mcd
LED current: 70mA
Viewing angle: 11°
Dimensions: 2.3x2.3x2.8mm
Front: convex
Case: Gull wing
Operating voltage: 1.9...2.7V DC
на замовлення 3281 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.79 грн |
18+ | 21.76 грн |
25+ | 18.24 грн |
79+ | 11.65 грн |
216+ | 11.04 грн |
1800+ | 10.58 грн |
VLMY1300-GS08 |
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Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 28÷180mcd; 1.6x0.8x0.8mm; 65°; 30mA
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case: 0603
Luminosity: 28...180mcd
Dimensions: 1.6x0.8x0.8mm
Viewing angle: 65°
LED current: 30mA
Wavelength: 584.5...597nm
Front: flat
Operating voltage: 1.8...2.4V DC
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 28÷180mcd; 1.6x0.8x0.8mm; 65°; 30mA
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case: 0603
Luminosity: 28...180mcd
Dimensions: 1.6x0.8x0.8mm
Viewing angle: 65°
LED current: 30mA
Wavelength: 584.5...597nm
Front: flat
Operating voltage: 1.8...2.4V DC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.33 грн |
43+ | 9.12 грн |
100+ | 5.48 грн |
349+ | 2.64 грн |
958+ | 2.49 грн |
RCA0805390RFKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 390Ω; 125mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 390Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0805; 390Ω; 125mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 390Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Operating temperature: -55...155°C
на замовлення 4720 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
210+ | 1.98 грн |
270+ | 1.43 грн |
300+ | 1.28 грн |
500+ | 1.00 грн |
1000+ | 0.91 грн |
2020+ | 0.44 грн |
RCA06034K70FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 4.7kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 4.7kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0603; 4.7kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 4.7kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Operating temperature: -55...155°C
на замовлення 4620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.40 грн |
370+ | 1.04 грн |
410+ | 0.93 грн |
550+ | 0.70 грн |
1000+ | 0.62 грн |
2500+ | 0.53 грн |
3150+ | 0.28 грн |
SIS892ADN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.1nC
на замовлення 2984 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.70 грн |
10+ | 54.64 грн |
25+ | 36.86 грн |
67+ | 34.87 грн |
500+ | 33.57 грн |
SI7615ADN-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -80A; 33W
Mounting: SMD
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 4.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Gate charge: 183nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -80A; 33W
Mounting: SMD
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 4.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Gate charge: 183nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -80A
на замовлення 3199 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.77 грн |
9+ | 42.91 грн |
11+ | 36.32 грн |
34+ | 27.36 грн |
93+ | 25.90 грн |
100+ | 24.98 грн |
500+ | 24.91 грн |
SIS443DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -80A
на замовлення 2913 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 141.95 грн |
10+ | 112.65 грн |
19+ | 50.58 грн |
50+ | 48.28 грн |
SI7153DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: -100A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -100A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: -100A
на замовлення 4504 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.88 грн |
25+ | 24.22 грн |
47+ | 19.92 грн |
128+ | 18.85 грн |
3000+ | 18.09 грн |
SISH625DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: -80A
на замовлення 5671 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.52 грн |
11+ | 36.86 грн |
36+ | 26.06 грн |
98+ | 24.60 грн |
500+ | 23.68 грн |
SIS413DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: -70A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: -70A
на замовлення 5574 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.79 грн |
12+ | 32.03 грн |
25+ | 23.37 грн |
50+ | 18.62 грн |
137+ | 17.55 грн |
500+ | 17.32 грн |
1000+ | 16.94 грн |
SISS27DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A
Polarisation: unipolar
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 9mΩ
Drain current: -50A
Drain-source voltage: -30V
Case: PowerPAK® 1212-8
Mounting: SMD
Gate charge: 0.14µC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
Power dissipation: 36W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A
Polarisation: unipolar
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 9mΩ
Drain current: -50A
Drain-source voltage: -30V
Case: PowerPAK® 1212-8
Mounting: SMD
Gate charge: 0.14µC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
Power dissipation: 36W
на замовлення 1091 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.67 грн |
10+ | 45.44 грн |
41+ | 22.53 грн |
112+ | 21.30 грн |
1000+ | 20.92 грн |
SISS61DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Power dissipation: 42.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 231nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -200A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -89.6A
On-state resistance: 9.8mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Power dissipation: 42.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 231nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -200A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -89.6A
On-state resistance: 9.8mΩ
Type of transistor: P-MOSFET
на замовлення 5819 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.65 грн |
10+ | 54.10 грн |
28+ | 32.03 грн |
77+ | 30.27 грн |
1000+ | 29.12 грн |
SiS406DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.2A
Power dissipation: 2.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12.2A; Idm: 50A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.2A
Power dissipation: 2.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: 50A
на замовлення 2979 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.12 грн |
9+ | 47.36 грн |
25+ | 41.77 грн |
26+ | 36.02 грн |
70+ | 34.49 грн |
SISS27ADN-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A
Polarisation: unipolar
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 8.1mΩ
Drain current: -50A
Drain-source voltage: -30V
Case: PowerPAK® 1212-8
Mounting: SMD
Gate charge: 117nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
Power dissipation: 36W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A
Polarisation: unipolar
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 8.1mΩ
Drain current: -50A
Drain-source voltage: -30V
Case: PowerPAK® 1212-8
Mounting: SMD
Gate charge: 117nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -200A
Power dissipation: 36W
товару немає в наявності
В кошику
од. на суму грн.
P6SMB8.2A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.2V; 49.6A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 49.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.2V; 49.6A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 49.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
товару немає в наявності
В кошику
од. на суму грн.
P6SMB8.2A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.2V; 49.6A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 49.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: 13 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.2V; 49.6A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 49.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: 13 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
товару немає в наявності
В кошику
од. на суму грн.
SUD20N10-66L-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.9A
Pulsed drain current: 25A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.9A
Pulsed drain current: 25A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
В кошику
од. на суму грн.
TCLT1013 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; LSOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: LSOP4
Conform to the norm: UL; VDE
Turn-on time: 9µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: TCLT101.
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; LSOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: LSOP4
Conform to the norm: UL; VDE
Turn-on time: 9µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: TCLT101.
товару немає в наявності
В кошику
од. на суму грн.
RCA1206332RFKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 332Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 332Ω
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 332Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 332Ω
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Conform to the norm: AEC Q200
на замовлення 4980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
140+ | 3.05 грн |
180+ | 2.18 грн |
200+ | 1.95 грн |
500+ | 1.52 грн |
1000+ | 1.39 грн |
1330+ | 0.67 грн |
3640+ | 0.64 грн |
CRCW25122K00FKEG |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 2kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 2kΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 2kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 2kΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
26+ | 15.68 грн |
SI4401DDY-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16.1A; Idm: -50A; 4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -16.1A
Pulsed drain current: -50A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16.1A; Idm: -50A; 4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -16.1A
Pulsed drain current: -50A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1488 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.40 грн |
10+ | 46.06 грн |
43+ | 21.07 грн |
117+ | 19.92 грн |
SI4401BDY-T1-E3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; 2.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.3A
Power dissipation: 2.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; 2.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.3A
Power dissipation: 2.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 109 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 89.66 грн |
13+ | 72.04 грн |
35+ | 68.20 грн |
SI4401FDY-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.07 грн |
9+ | 44.45 грн |
25+ | 40.00 грн |
30+ | 30.58 грн |
81+ | 28.89 грн |
CRCW040251R0FKTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 51Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 51Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 51Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 51Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 9800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
500+ | 1.00 грн |
1000+ | 0.41 грн |
4900+ | 0.19 грн |
VJ0201Y102KXJCW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 16V; X7R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 16V; X7R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
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од. на суму грн.
VJ0603A102KXJCW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 16V; C0G (NP0); ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 16V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 16V; C0G (NP0); ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 16V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
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од. на суму грн.
RCA08050000ZSEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 125mW; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Power: 0.125W
Temperature coefficient: 100ppm/°C
Max. operating voltage: 150V
Conform to the norm: AEC Q200
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 0805; 125mW; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Power: 0.125W
Temperature coefficient: 100ppm/°C
Max. operating voltage: 150V
Conform to the norm: AEC Q200
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
на замовлення 4900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
210+ | 1.98 грн |
250+ | 1.56 грн |
280+ | 1.38 грн |
500+ | 1.02 грн |
1000+ | 0.90 грн |
2360+ | 0.38 грн |
RCA1206301KFKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 301kΩ; 250mW; ±1%; -55÷155°C; 100ppm/°C
Case - inch: 1206
Max. operating voltage: 200V
Power: 0.25W
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Case - mm: 3216
Type of resistor: thick film
Resistance: 301kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 1206; 301kΩ; 250mW; ±1%; -55÷155°C; 100ppm/°C
Case - inch: 1206
Max. operating voltage: 200V
Power: 0.25W
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Case - mm: 3216
Type of resistor: thick film
Resistance: 301kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
на замовлення 4950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
140+ | 3.05 грн |
180+ | 2.18 грн |
200+ | 1.95 грн |
500+ | 1.52 грн |
1000+ | 1.39 грн |
1360+ | 0.67 грн |
3740+ | 0.64 грн |
RCA0402301KFKED |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 301kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 301kΩ
Power: 63mW
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 50V
Conform to the norm: AEC Q200
Case - mm: 1005
Case - inch: 0402
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 0402; 301kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 301kΩ
Power: 63mW
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 50V
Conform to the norm: AEC Q200
Case - mm: 1005
Case - inch: 0402
Temperature coefficient: 100ppm/°C
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В кошику
од. на суму грн.
RCA0603301KFKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 301kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 301kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 75V
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 0603; 301kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 301kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 75V
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
товару немає в наявності
В кошику
од. на суму грн.
RCA0603301KFKEC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 301kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 301kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 75V
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 0603; 301kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 301kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 75V
Conform to the norm: AEC Q200
Case - mm: 1608
Case - inch: 0603
Temperature coefficient: 100ppm/°C
товару немає в наявності
В кошику
од. на суму грн.