| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIRA12DP-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 20W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Pulsed drain current: 80A Power dissipation: 20W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA50ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 175A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 175A Pulsed drain current: 400A Power dissipation: 64W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA20DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 100A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 500A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: -12...16V On-state resistance: 820µΩ Mounting: SMD Gate charge: 200nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA58DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 87.3A Pulsed drain current: 150A Power dissipation: 36.3W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA80DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 268A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 268A Pulsed drain current: 500A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 930µΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA00DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 0.22µC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA10BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 150A; 28W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 150A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 36.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA12BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 59A; Idm: 150A; 24W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 59A Pulsed drain current: 150A Power dissipation: 24W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA14BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 52A Pulsed drain current: 130A Power dissipation: 23W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 7.02mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA20BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 268A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 268A Pulsed drain current: 350A Power dissipation: 67W Case: PowerPAK® SO8 Gate-source voltage: -12...16V On-state resistance: 820µΩ Mounting: SMD Gate charge: 186nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA24DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 40W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 150A Power dissipation: 40W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA32DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 148A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 148A Pulsed drain current: 500A Power dissipation: 42W Case: PowerPAK® SO8 Gate-source voltage: -12...16V On-state resistance: 1.83mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA36DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 250A Power dissipation: 28.5W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA50DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 64W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.45mΩ Mounting: SMD Gate charge: 194nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA52DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 30.7W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA54DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 23.5W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA58ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 87.3A Pulsed drain current: 150A Power dissipation: 36.3W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 3.95mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA60DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 36W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA62DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 300A Power dissipation: 42W Case: PowerPAK® SO8 Gate-source voltage: -12...16V On-state resistance: 1.85mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA64DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 100A Power dissipation: 17.8W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 2.86mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SiRA72DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 36.3W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA74DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 64.2A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 64.2A Pulsed drain current: 150A Power dissipation: 29.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA84BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 56A; Idm: 150A; 23W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 56A Pulsed drain current: 150A Power dissipation: 23W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 7.1mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA84DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 57.8A; Idm: 130A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 57.8A Pulsed drain current: 130A Power dissipation: 22.2W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA88BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Pulsed drain current: 90A Power dissipation: 11W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SiRA88DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 36.4A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 36.4A Pulsed drain current: 100A Power dissipation: 16W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 25.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIRA90DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 153nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIHA24N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 51A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CRCW1206130RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 130Ω; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 130Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 110799 шт: термін постачання 21-30 дні (днів) |
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RCA120630R0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 30Ω; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 30Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CRCW120630R0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 30Ω; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 30Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 100ppm/°C Body dimensions: 3.2x1.6x0.55mm Roll diameter max.: 180mm Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 Mounting: SMD Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CRCW120630R0JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 30Ω; 250mW; ±5%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 30Ω Power: 0.25W Tolerance: ±5% Operating voltage: 200V Temperature coefficient: 200ppm/°C Body dimensions: 3.3x1.75x0.6mm Roll diameter max.: 180mm Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 Mounting: SMD Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CRCW08055K60FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 5.6kΩ; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 5.6kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 9900 шт: термін постачання 21-30 дні (днів) |
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RCA08055K60FHEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 5.6kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 5.6kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RCA08055K60FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 5.6kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 5.6kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RCA08051K50FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 1.5kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1.5kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| VS-E5PH7506L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; tube; Ifsm: 615A; TO247AD-2; 57ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 615A Case: TO247AD-2 Max. forward voltage: 1.7V Max. load current: 150A Reverse recovery time: 57ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MRS16000C2263FC100 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 226kΩ; 400mW; ±1%; 200V; Ø0.5x29mm Type of resistor: thin film Mounting: THT Resistance: 226kΩ Power: 0.4W Tolerance: ±1% Operating voltage: 200V Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Length: 3.6mm Diameter: 1.6mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TZM5250B-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 20V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs. Case: MiniMELF; SOD80 Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 20V Quantity in set/package: 2500pcs. Kind of package: 7 inch reel |
на замовлення 1475 шт: термін постачання 21-30 дні (днів) |
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CRCW251210R0JNEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 10Ω; 1W; ±5%; CRCW2512; 500V Type of resistor: thick film Mounting: SMD Resistance: 10Ω Power: 1W Tolerance: ±5% Operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Case - mm: 6332 Manufacturer series: CRCW2512 Case - inch: 2512 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CRCW121810R0JNEK | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1218; 10Ω; 1W; ±5%; 200V; 3.3x4.75x0.6mm Mounting: SMD Type of resistor: thick film Operating temperature: -55...155°C Resistance: 10Ω Body dimensions: 3.3x4.75x0.6mm Roll diameter max.: 180mm Power: 1W Tolerance: ±5% Temperature coefficient: 200ppm/°C Operating voltage: 200V Case - inch: 1218 Quantity in set/package: 4000pcs. Case - mm: 3246 Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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WSL2010R0900FEA18 | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; SMD; 2010; 90mΩ; 1W; ±1%; 5.08x2.54x0.635mm Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 90mΩ Power: 1W Tolerance: ±1% Body dimensions: 5.08x2.54x0.635mm Operating temperature: -65...170°C Temperature coefficient: 75ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 178mm Quantity in set/package: 4000pcs. |
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В кошику од. на суму грн. | ||||||||||
| WSL2010R0560FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 56mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 56mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0390FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 39mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 39mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0220FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 22mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 22mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0270FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 27mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 27mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0280FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 28mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 28mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0800FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 80mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 80mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0100FEB | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 10mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 10mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0110FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 11mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 11mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0120FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 12mΩ; 1W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2010 Case - mm: 5025 Resistance: 12mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Manufacturer series: WSL2010 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0120FEB | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 12mΩ; 1W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2010 Case - mm: 5025 Resistance: 12mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0130FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 13mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 13mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0140FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 14mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 14mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0150FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 15mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 15mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Manufacturer series: WSL2010 Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0150FEB | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 15mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 15mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0160FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 16mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 16mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0270FTA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 27mΩ; 1W Type of resistor: metal strip Mounting: SMD Case - inch: 2010 Resistance: 27mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Kind of resistor: current shunt; sensing Manufacturer series: WSL2010 Case - mm: 5025 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0400FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 40mΩ; 1W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2010 Case - mm: 5025 Resistance: 40mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C Manufacturer series: WSL2010 |
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В кошику од. на суму грн. | |||||||||||
| WSL2010R0400FEB | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 40mΩ; 1W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2010 Case - mm: 5025 Resistance: 40mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C |
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В кошику од. на суму грн. |
| SIRA12DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 20W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 20W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 20W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 20W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA50ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 175A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 175A
Pulsed drain current: 400A
Power dissipation: 64W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 175A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 175A
Pulsed drain current: 400A
Power dissipation: 64W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA20DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 100A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 500A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -12...16V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 100A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 500A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -12...16V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA58DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87.3A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87.3A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA80DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 268A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 268A
Pulsed drain current: 500A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 930µΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 268A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 268A
Pulsed drain current: 500A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 930µΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA00DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA10BDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 150A; 28W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 36.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 150A; 28W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 36.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA12BDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 59A; Idm: 150A; 24W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Pulsed drain current: 150A
Power dissipation: 24W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 59A; Idm: 150A; 24W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Pulsed drain current: 150A
Power dissipation: 24W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA14BDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 52A
Pulsed drain current: 130A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.02mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 52A
Pulsed drain current: 130A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.02mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA20BDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 268A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 268A
Pulsed drain current: 350A
Power dissipation: 67W
Case: PowerPAK® SO8
Gate-source voltage: -12...16V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 268A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 268A
Pulsed drain current: 350A
Power dissipation: 67W
Case: PowerPAK® SO8
Gate-source voltage: -12...16V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA24DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 40W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 40W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 40W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 40W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA32DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 148A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 148A
Pulsed drain current: 500A
Power dissipation: 42W
Case: PowerPAK® SO8
Gate-source voltage: -12...16V
On-state resistance: 1.83mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 148A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 148A
Pulsed drain current: 500A
Power dissipation: 42W
Case: PowerPAK® SO8
Gate-source voltage: -12...16V
On-state resistance: 1.83mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA36DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 250A
Power dissipation: 28.5W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 250A
Power dissipation: 28.5W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA50DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 64W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.45mΩ
Mounting: SMD
Gate charge: 194nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 64W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.45mΩ
Mounting: SMD
Gate charge: 194nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA52DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA54DP-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 23.5W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 23.5W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA58ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87.3A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87.3A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA60DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 36W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 36W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA62DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 300A
Power dissipation: 42W
Case: PowerPAK® SO8
Gate-source voltage: -12...16V
On-state resistance: 1.85mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 300A
Power dissipation: 42W
Case: PowerPAK® SO8
Gate-source voltage: -12...16V
On-state resistance: 1.85mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA64DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.86mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.86mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SiRA72DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA74DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 64.2A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64.2A
Pulsed drain current: 150A
Power dissipation: 29.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 64.2A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64.2A
Pulsed drain current: 150A
Power dissipation: 29.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA84BDP-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 56A; Idm: 150A; 23W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Pulsed drain current: 150A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.1mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 56A; Idm: 150A; 23W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Pulsed drain current: 150A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.1mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA84DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 57.8A; Idm: 130A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 57.8A
Pulsed drain current: 130A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 57.8A; Idm: 130A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 57.8A
Pulsed drain current: 130A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA88BDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 90A
Power dissipation: 11W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 90A
Power dissipation: 11W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SiRA88DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 36.4A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36.4A
Pulsed drain current: 100A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 25.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 36.4A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36.4A
Pulsed drain current: 100A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 25.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIRA90DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHA24N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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| CRCW1206130RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 130Ω; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 130Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 130Ω; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 130Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 110799 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.46 грн |
| 500+ | 1.33 грн |
| 1000+ | 0.85 грн |
| 5000+ | 0.38 грн |
| RCA120630R0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 30Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 30Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 1206; 30Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 30Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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| CRCW120630R0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 30Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Body dimensions: 3.2x1.6x0.55mm
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 30Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Body dimensions: 3.2x1.6x0.55mm
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
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| CRCW120630R0JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30Ω; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 30Ω
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Temperature coefficient: 200ppm/°C
Body dimensions: 3.3x1.75x0.6mm
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30Ω; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 30Ω
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Temperature coefficient: 200ppm/°C
Body dimensions: 3.3x1.75x0.6mm
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
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| CRCW08055K60FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 5.6kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 5.6kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 5.6kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 5.6kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 9900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 2.00 грн |
| 500+ | 0.98 грн |
| 1000+ | 0.60 грн |
| 5000+ | 0.22 грн |
| RCA08055K60FHEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 5.6kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 5.6kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0805; 5.6kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 5.6kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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| RCA08055K60FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 5.6kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 5.6kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0805; 5.6kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 5.6kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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| RCA08051K50FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 1.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0805; 1.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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| VS-E5PH7506L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; tube; Ifsm: 615A; TO247AD-2; 57ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 615A
Case: TO247AD-2
Max. forward voltage: 1.7V
Max. load current: 150A
Reverse recovery time: 57ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; tube; Ifsm: 615A; TO247AD-2; 57ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 615A
Case: TO247AD-2
Max. forward voltage: 1.7V
Max. load current: 150A
Reverse recovery time: 57ns
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| MRS16000C2263FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 226kΩ; 400mW; ±1%; 200V; Ø0.5x29mm
Type of resistor: thin film
Mounting: THT
Resistance: 226kΩ
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Length: 3.6mm
Diameter: 1.6mm
Category: THT Resistors
Description: Resistor: thin film; THT; 226kΩ; 400mW; ±1%; 200V; Ø0.5x29mm
Type of resistor: thin film
Mounting: THT
Resistance: 226kΩ
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Length: 3.6mm
Diameter: 1.6mm
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| TZM5250B-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Case: MiniMELF; SOD80
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Case: MiniMELF; SOD80
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
на замовлення 1475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 85+ | 4.84 грн |
| 102+ | 4.06 грн |
| 147+ | 2.80 грн |
| 500+ | 2.14 грн |
| CRCW251210R0JNEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10Ω; 1W; ±5%; CRCW2512; 500V
Type of resistor: thick film
Mounting: SMD
Resistance: 10Ω
Power: 1W
Tolerance: ±5%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Case - mm: 6332
Manufacturer series: CRCW2512
Case - inch: 2512
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10Ω; 1W; ±5%; CRCW2512; 500V
Type of resistor: thick film
Mounting: SMD
Resistance: 10Ω
Power: 1W
Tolerance: ±5%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Case - mm: 6332
Manufacturer series: CRCW2512
Case - inch: 2512
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| CRCW121810R0JNEK |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1218; 10Ω; 1W; ±5%; 200V; 3.3x4.75x0.6mm
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 10Ω
Body dimensions: 3.3x4.75x0.6mm
Roll diameter max.: 180mm
Power: 1W
Tolerance: ±5%
Temperature coefficient: 200ppm/°C
Operating voltage: 200V
Case - inch: 1218
Quantity in set/package: 4000pcs.
Case - mm: 3246
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; SMD; 1218; 10Ω; 1W; ±5%; 200V; 3.3x4.75x0.6mm
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 10Ω
Body dimensions: 3.3x4.75x0.6mm
Roll diameter max.: 180mm
Power: 1W
Tolerance: ±5%
Temperature coefficient: 200ppm/°C
Operating voltage: 200V
Case - inch: 1218
Quantity in set/package: 4000pcs.
Case - mm: 3246
Conform to the norm: AEC-Q200
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| WSL2010R0900FEA18 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; SMD; 2010; 90mΩ; 1W; ±1%; 5.08x2.54x0.635mm
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 90mΩ
Power: 1W
Tolerance: ±1%
Body dimensions: 5.08x2.54x0.635mm
Operating temperature: -65...170°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 178mm
Quantity in set/package: 4000pcs.
Category: SMD resistors
Description: Resistor: metal strip; SMD; 2010; 90mΩ; 1W; ±1%; 5.08x2.54x0.635mm
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 90mΩ
Power: 1W
Tolerance: ±1%
Body dimensions: 5.08x2.54x0.635mm
Operating temperature: -65...170°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 178mm
Quantity in set/package: 4000pcs.
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| WSL2010R0560FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 56mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 56mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 56mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 56mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0390FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 39mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 39mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 39mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 39mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0220FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 22mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 22mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 22mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 22mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0270FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 27mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 27mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 27mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 27mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0280FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 28mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 28mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 28mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 28mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0800FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 80mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 80mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 80mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 80mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0100FEB |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 10mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 10mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 10mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 10mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0110FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 11mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 11mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 11mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 11mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0120FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 12mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2010
Case - mm: 5025
Resistance: 12mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Manufacturer series: WSL2010
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 12mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2010
Case - mm: 5025
Resistance: 12mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Manufacturer series: WSL2010
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| WSL2010R0120FEB |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 12mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2010
Case - mm: 5025
Resistance: 12mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 12mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2010
Case - mm: 5025
Resistance: 12mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
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| WSL2010R0130FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 13mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 13mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 13mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 13mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0140FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 14mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 14mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 14mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 14mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0150FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 15mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 15mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Manufacturer series: WSL2010
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 15mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 15mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Manufacturer series: WSL2010
Case - mm: 5025
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| WSL2010R0150FEB |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 15mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 15mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 15mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 15mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0160FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 16mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 16mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 16mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 16mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Case - mm: 5025
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| WSL2010R0270FTA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 27mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 27mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Manufacturer series: WSL2010
Case - mm: 5025
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 27mΩ; 1W
Type of resistor: metal strip
Mounting: SMD
Case - inch: 2010
Resistance: 27mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Kind of resistor: current shunt; sensing
Manufacturer series: WSL2010
Case - mm: 5025
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| WSL2010R0400FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 40mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2010
Case - mm: 5025
Resistance: 40mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Manufacturer series: WSL2010
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 40mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2010
Case - mm: 5025
Resistance: 40mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Manufacturer series: WSL2010
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| WSL2010R0400FEB |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 40mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2010
Case - mm: 5025
Resistance: 40mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2010; 40mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2010
Case - mm: 5025
Resistance: 40mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
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