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SIR882ADP-T1-GE3 VISHAY sir882adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR882BDP-T1-RE3 VISHAY sir882bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 67.5A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67.5A
Pulsed drain current: 200A
Power dissipation: 83.3W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR882DP-T1-GE3 VISHAY sir882dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIRA00DP-T1-GE3 VISHAY sira00dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA01DP-T1-GE3 VISHAY sira01dp.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.8A; 40W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -20.8A
On-state resistance: 8.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 112nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -20...16V
Pulsed drain current: -150A
Case: PowerPAK® SO8
кількість в упаковці: 1 шт
товар відсутній
SIRA02DP-T1-GE3 VISHAY sira02dp.pdf SIRA02DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA04DP-T1-GE3 VISHAY sira04dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 40W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA06DP-T1-GE3 VISHAY sira06dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 40W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA10BDP-T1-GE3 VISHAY sira10bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 150A; 28W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 36.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA10DP-T1-GE3 VISHAY sira10dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 140A; 26W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 140A
Power dissipation: 26W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA12BDP-T1-GE3 VISHAY sira12bdp.pdf SIRA12BDP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA12DP-T1-GE3 VISHAY SIRA12DP.pdf SIRA12DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA14BDP-T1-GE3 VISHAY sira14bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 52A
Pulsed drain current: 130A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.02mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA14DP-T1-GE3 VISHAY sira14dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 130A
Power dissipation: 20W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA18ADP-T1-GE3 VISHAY sira18adp.pdf SIRA18ADP-T1-GE3 SMD N channel transistors
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
12+24.1 грн
63+ 15.41 грн
173+ 14.59 грн
Мінімальне замовлення: 12
SIRA18BDP-T1-GE3 VISHAY sira18bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 19nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
товар відсутній
SIRA18DP-T1-GE3 VISHAY sira18dp.pdf SIRA18DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA20BDP-T1-GE3 VISHAY sira20bdp.pdf SIRA20BDP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA20DP-T1-RE3 VISHAY sira20dp.pdf SIRA20DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA24DP-T1-GE3 VISHAY sira24dp.pdf SIRA24DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA28BDP-T1-GE3 VISHAY sira28bdp.pdf SIRA28BDP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA32DP-T1-RE3 VISHAY sira32dp.pdf SIRA32DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA36DP-T1-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 250A
Power dissipation: 28.5W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA50ADP-T1-RE3 VISHAY sira50adp.pdf SIRA50ADP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA50DP-T1-RE3 VISHAY sira50dp.pdf SIRA50DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA52ADP-T1-RE3 VISHAY sira52adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 200A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA52DP-T1-GE3 VISHAY sira52dp.pdf SIRA52DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA54DP-T1-GE3 VISHAY SIRA54DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA58ADP-T1-RE3 VISHAY sira58adp.pdf SIRA58ADP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA58DP-T1-GE3 VISHAY sira58dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87.3A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA60DP-T1-GE3 VISHAY sira60dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 36W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA62DP-T1-RE3 VISHAY sira62dp.pdf SIRA62DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA64DP-T1-GE3 VISHAY sira64dp.pdf SIRA64DP-T1-GE3 SMD N channel transistors
товар відсутній
SiRA72DP-T1-GE3 VISHAY sira72dp.pdf SIRA72DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA74DP-T1-GE3 VISHAY doc?77640 SIRA74DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA80DP-T1-RE3 VISHAY sira80dp.pdf SIRA80DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA84BDP-T1-GE3 VISHAY SIRA84BDP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA84DP-T1-GE3 VISHAY sira84dp.pdf SIRA84DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA88BDP-T1-GE3 VISHAY sira88bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 19nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
товар відсутній
SiRA88DP-T1-GE3 VISHAY sira88dp.pdf SIRA88DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA90DP-T1-GE3 VISHAY sira90dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA90DP-T1-RE3 VISHAY sira90dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SiRA96DP-T1-GE3 VISHAY sira96dp.pdf SIRA96DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA99DP-T1-GE3 VISHAY sira99dp.pdf SIRA99DP-T1-GE3 SMD P channel transistors
товар відсутній
SIRB40DP-T1-GE3 VISHAY sirb40dp.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIRC06DP-T1-GE3 VISHAY sirc06dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 32W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIRC10DP-T1-GE3 VISHAY sirc10dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 27.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SiRC16DP-T1-GE3 VISHAY sirc16dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 250A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIRC18DP-T1-GE3 VISHAY sirc18dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 250A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.54mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIRS700DP-T1-RE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 102A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 350A
Power dissipation: 84W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIS106DN-T1-GE3 VISHAY sis106dn.pdf SIS106DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS108DN-T1-GE3 VISHAY SIS108DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS110DN-T1-GE3 VISHAY sis110dn.pdf SIS110DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS126DN-T1-GE3 VISHAY sis126dn.pdf SIS126DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS128LDN-T1-GE3 VISHAY sis128ldn.pdf SIS128LDN-T1-GE3 SMD N channel transistors
товар відсутній
SIS176LDN-T1-GE3 VISHAY sis176ldn.pdf SIS176LDN-T1-GE3 SMD N channel transistors
товар відсутній
SIS178LDN-T1-GE3 VISHAY sis178ldn.pdf SIS178LDN-T1-GE3 SMD N channel transistors
товар відсутній
SIS184DN-T1-GE3 VISHAY sis184dn.pdf SIS184DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS322DNT-T1-GE3 VISHAY sis322dnt.pdf SIS322DNT-T1-GE3 SMD N channel transistors
товар відсутній
SIS402DN-T1-GE3 VISHAY sis402dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIR882ADP-T1-GE3 sir882adp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR882BDP-T1-RE3 sir882bdp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 67.5A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67.5A
Pulsed drain current: 200A
Power dissipation: 83.3W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIR882DP-T1-GE3 sir882dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIRA00DP-T1-GE3 sira00dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA01DP-T1-GE3 sira01dp.pdf
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.8A; 40W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -20.8A
On-state resistance: 8.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 112nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -20...16V
Pulsed drain current: -150A
Case: PowerPAK® SO8
кількість в упаковці: 1 шт
товар відсутній
SIRA02DP-T1-GE3 sira02dp.pdf
Виробник: VISHAY
SIRA02DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA04DP-T1-GE3 sira04dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 40W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA06DP-T1-GE3 sira06dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 40W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA10BDP-T1-GE3 sira10bdp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 150A; 28W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 28W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 36.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA10DP-T1-GE3 sira10dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 140A; 26W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 140A
Power dissipation: 26W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA12BDP-T1-GE3 sira12bdp.pdf
Виробник: VISHAY
SIRA12BDP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA12DP-T1-GE3 SIRA12DP.pdf
Виробник: VISHAY
SIRA12DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA14BDP-T1-GE3 sira14bdp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 52A; Idm: 130A; 23W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 52A
Pulsed drain current: 130A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 7.02mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA14DP-T1-GE3 sira14dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 130A
Power dissipation: 20W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA18ADP-T1-GE3 sira18adp.pdf
Виробник: VISHAY
SIRA18ADP-T1-GE3 SMD N channel transistors
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
12+24.1 грн
63+ 15.41 грн
173+ 14.59 грн
Мінімальне замовлення: 12
SIRA18BDP-T1-GE3 sira18bdp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 19nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
товар відсутній
SIRA18DP-T1-GE3 sira18dp.pdf
Виробник: VISHAY
SIRA18DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA20BDP-T1-GE3 sira20bdp.pdf
Виробник: VISHAY
SIRA20BDP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA20DP-T1-RE3 sira20dp.pdf
Виробник: VISHAY
SIRA20DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA24DP-T1-GE3 sira24dp.pdf
Виробник: VISHAY
SIRA24DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA28BDP-T1-GE3 sira28bdp.pdf
Виробник: VISHAY
SIRA28BDP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA32DP-T1-RE3 sira32dp.pdf
Виробник: VISHAY
SIRA32DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA36DP-T1-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 250A
Power dissipation: 28.5W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA50ADP-T1-RE3 sira50adp.pdf
Виробник: VISHAY
SIRA50ADP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA50DP-T1-RE3 sira50dp.pdf
Виробник: VISHAY
SIRA50DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA52ADP-T1-RE3 sira52adp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 200A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA52DP-T1-GE3 sira52dp.pdf
Виробник: VISHAY
SIRA52DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA54DP-T1-GE3
Виробник: VISHAY
SIRA54DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA58ADP-T1-RE3 sira58adp.pdf
Виробник: VISHAY
SIRA58ADP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA58DP-T1-GE3 sira58dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 87.3A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87.3A
Pulsed drain current: 150A
Power dissipation: 36.3W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA60DP-T1-GE3 sira60dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 36W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA62DP-T1-RE3 sira62dp.pdf
Виробник: VISHAY
SIRA62DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA64DP-T1-GE3 sira64dp.pdf
Виробник: VISHAY
SIRA64DP-T1-GE3 SMD N channel transistors
товар відсутній
SiRA72DP-T1-GE3 sira72dp.pdf
Виробник: VISHAY
SIRA72DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA74DP-T1-GE3 doc?77640
Виробник: VISHAY
SIRA74DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA80DP-T1-RE3 sira80dp.pdf
Виробник: VISHAY
SIRA80DP-T1-RE3 SMD N channel transistors
товар відсутній
SIRA84BDP-T1-GE3
Виробник: VISHAY
SIRA84BDP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA84DP-T1-GE3 sira84dp.pdf
Виробник: VISHAY
SIRA84DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA88BDP-T1-GE3 sira88bdp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Drain-source voltage: 30V
Drain current: 32A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 11W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 19nC
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
товар відсутній
SiRA88DP-T1-GE3 sira88dp.pdf
Виробник: VISHAY
SIRA88DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA90DP-T1-GE3 sira90dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIRA90DP-T1-RE3 sira90dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SiRA96DP-T1-GE3 sira96dp.pdf
Виробник: VISHAY
SIRA96DP-T1-GE3 SMD N channel transistors
товар відсутній
SIRA99DP-T1-GE3 sira99dp.pdf
Виробник: VISHAY
SIRA99DP-T1-GE3 SMD P channel transistors
товар відсутній
SIRB40DP-T1-GE3 sirb40dp.pdf
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIRC06DP-T1-GE3 sirc06dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 32W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIRC10DP-T1-GE3 sirc10dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 27.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SiRC16DP-T1-GE3 sirc16dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 250A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIRC18DP-T1-GE3 sirc18dp.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 250A
Power dissipation: 34.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 1.54mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIRS700DP-T1-RE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 102A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 350A
Power dissipation: 84W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIS106DN-T1-GE3 sis106dn.pdf
Виробник: VISHAY
SIS106DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS108DN-T1-GE3
Виробник: VISHAY
SIS108DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS110DN-T1-GE3 sis110dn.pdf
Виробник: VISHAY
SIS110DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS126DN-T1-GE3 sis126dn.pdf
Виробник: VISHAY
SIS126DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS128LDN-T1-GE3 sis128ldn.pdf
Виробник: VISHAY
SIS128LDN-T1-GE3 SMD N channel transistors
товар відсутній
SIS176LDN-T1-GE3 sis176ldn.pdf
Виробник: VISHAY
SIS176LDN-T1-GE3 SMD N channel transistors
товар відсутній
SIS178LDN-T1-GE3 sis178ldn.pdf
Виробник: VISHAY
SIS178LDN-T1-GE3 SMD N channel transistors
товар відсутній
SIS184DN-T1-GE3 sis184dn.pdf
Виробник: VISHAY
SIS184DN-T1-GE3 SMD N channel transistors
товар відсутній
SIS322DNT-T1-GE3 sis322dnt.pdf
Виробник: VISHAY
SIS322DNT-T1-GE3 SMD N channel transistors
товар відсутній
SIS402DN-T1-GE3 sis402dn.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 70A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 70A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
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