| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI7106DN-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A Mounting: SMD Drain-source voltage: 20V Drain current: 19.5A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Case: PowerPAK® 1212-8 кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7108DN-T1-E3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Power dissipation: 3.8W Gate charge: 30nC Polarisation: unipolar Technology: TrenchFET® Drain current: 22A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 6.1mΩ кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Power dissipation: 3.8W Gate charge: 30nC Polarisation: unipolar Technology: TrenchFET® Drain current: 22A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 6.1mΩ кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7110DN-T1-E3 | VISHAY |
SI7110DN-T1-E3 SMD N channel transistors |
товар відсутній |
||||||||||||
| SI7110DN-T1-GE3 | VISHAY |
SI7110DN-T1-GE3 SMD N channel transistors |
товар відсутній |
||||||||||||
| Si7111EDN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -60A Pulsed drain current: -150A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 16mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7112DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.8A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7112DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.8A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7113ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -10.8A Pulsed drain current: -20A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 132mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7113DN-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13.2A Pulsed drain current: -20A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7113DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.5A Pulsed drain current: -20A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2900 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||
| SI7114ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W Mounting: SMD Power dissipation: 39W Polarisation: unipolar Kind of package: reel; tape Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 35A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7114DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7114DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7115DN-T1-E3 | VISHAY |
SI7115DN-T1-E3 SMD P channel transistors |
товар відсутній |
||||||||||||
| SI7115DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -8.9A Pulsed drain current: -15A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.295Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7116BDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Pulsed drain current: 100A Power dissipation: 62.5W Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 6000 шт |
товар відсутній |
||||||||||||
| SI7116DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 16.4A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7116DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 16.4A Pulsed drain current: 60A Power dissipation: 3.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7117DN-T1-E3 | VISHAY |
SI7117DN-T1-E3 SMD P channel transistors |
товар відсутній |
||||||||||||
| SI7117DN-T1-GE3 | VISHAY |
SI7117DN-T1-GE3 SMD P channel transistors |
товар відсутній |
||||||||||||
| SI7119DN-T1-E3 | VISHAY |
SI7119DN-T1-E3 SMD P channel transistors |
товар відсутній |
||||||||||||
| SI7119DN-T1-GE3 | VISHAY |
SI7119DN-T1-GE3 SMD P channel transistors |
товар відсутній |
||||||||||||
| Si7120ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 45nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Drain-source voltage: 60V Drain current: 9.5A On-state resistance: 31mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7121ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -50A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7121DN-T1-GE3 | VISHAY |
SI7121DN-T1-GE3 SMD P channel transistors |
товар відсутній |
||||||||||||
| SI7129DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -60A Power dissipation: 52.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7135DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W Mounting: SMD Power dissipation: 66.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 250nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -100A Case: PowerPAK® SO8 Drain-source voltage: -30V Drain current: -60A On-state resistance: 3.9mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7137DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -100A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 1.95mΩ Mounting: SMD Gate charge: 585nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7139DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Pulsed drain current: -70A Power dissipation: 30W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 146nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7141DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 400nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7143DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -60A Power dissipation: 35.7W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 18.6mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7145DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -60A Pulsed drain current: -100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 3.75mΩ Mounting: SMD Gate charge: 413nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||
| SI7148DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 28A; Idm: 60A; 96W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 28A Pulsed drain current: 60A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7148DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 28A Pulsed drain current: 60A Power dissipation: 61W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
 |
SI7149ADP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Power dissipation: 31W Case: PowerPAK® SO8 Gate-source voltage: ±25V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 43.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3931 шт: термін постачання 7-14 дні (днів) |
|
||||||||||
| SI7149DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -70A Power dissipation: 44.4W Case: PowerPAK® SO8 Gate-source voltage: ±25V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7153DN-T1-GE3 | VISHAY |
SI7153DN-T1-GE3 SMD P channel transistors |
на замовлення 5468 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||
| SI7155DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -100A Pulsed drain current: -200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 330nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||
| SI7157DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 625nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7164DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 60A On-state resistance: 6.25mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 75nC Technology: TrenchFET® Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||
| SI7172ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET кількість в упаковці: 6000 шт |
товар відсутній |
||||||||||||
| SI7172DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 25A; Idm: 30A; 96W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Pulsed drain current: 30A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 76mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7174DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 60A Pulsed drain current: 80A Power dissipation: 66.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7178DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7190ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 14.4A Pulsed drain current: 30A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 22.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 6000 шт |
товар відсутній |
||||||||||||
| SI7190DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 18.4A Pulsed drain current: 30A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7192DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.25mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7212DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.8A Pulsed drain current: 20A Power dissipation: 2.6W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 39mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7212DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.8A Pulsed drain current: 20A Power dissipation: 2.6W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 39mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7216DN-T1-E3 | VISHAY |
SI7216DN-T1-E3 SMD N channel transistors |
товар відсутній |
||||||||||||
| SI7216DN-T1-GE3 | VISHAY |
SI7216DN-T1-GE3 SMD N channel transistors |
товар відсутній |
||||||||||||
| SI7220DN-T1-E3 | VISHAY |
SI7220DN-T1-E3 SMD N channel transistors |
товар відсутній |
||||||||||||
| SI7220DN-T1-GE3 | VISHAY |
SI7220DN-T1-GE3 SMD N channel transistors |
товар відсутній |
||||||||||||
| SI7223DN-T1-GE3 | VISHAY |
SI7223DN-T1-GE3 Multi channel transistors |
товар відсутній |
||||||||||||
| SI7232DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 25A Pulsed drain current: 40A Power dissipation: 23W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 24mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7234DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Power dissipation: 46W Drain-source voltage: 12V Drain current: 60A On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7252ADP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Pulsed drain current: 70A Power dissipation: 21.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 6000 шт |
товар відсутній |
||||||||||||
| SI7252DP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 29.2A Pulsed drain current: 80A Power dissipation: 29W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||
| SI7272DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 25A; Idm: 60A Drain-source voltage: 30V Drain current: 25A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET x2 Power dissipation: 22W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Mounting: SMD Case: PowerPAK® SO8 кількість в упаковці: 3000 шт |
товар відсутній |
| SI7106DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 19.5A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
кількість в упаковці: 3000 шт
товар відсутній
| SI7108DN-T1-E3 | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
кількість в упаковці: 3000 шт
товар відсутній
| SI7108DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Power dissipation: 3.8W
Gate charge: 30nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
кількість в упаковці: 3000 шт
товар відсутній
| Si7111EDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -150A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7112DN-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7112DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7113ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -10.8A
Pulsed drain current: -20A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -10.8A
Pulsed drain current: -20A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7113DN-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.2A
Pulsed drain current: -20A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.2A
Pulsed drain current: -20A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7113DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -20A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2900 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.29 грн |
| 10+ | 97.71 грн |
| 16+ | 62.46 грн |
| 42+ | 58.4 грн |
| SI7114ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 39W
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SI7114DN-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SI7114DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SI7115DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7116BDN-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 65A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Pulsed drain current: 100A
Power dissipation: 62.5W
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
| SI7116DN-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7116DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 16.4A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16.4A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| Si7120ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 9.5A; Idm: 40A
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SI7121ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 17.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7129DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7135DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W
Mounting: SMD
Power dissipation: 66.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 250nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
Case: PowerPAK® SO8
Drain-source voltage: -30V
Drain current: -60A
On-state resistance: 3.9mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -100A; 66.6W
Mounting: SMD
Power dissipation: 66.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 250nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -100A
Case: PowerPAK® SO8
Drain-source voltage: -30V
Drain current: -60A
On-state resistance: 3.9mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SI7137DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 585nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 585nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7139DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -70A
Power dissipation: 30W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -70A
Power dissipation: 30W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 146nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7141DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7143DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 35.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18.6mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 35.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 18.6mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7145DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.75mΩ
Mounting: SMD
Gate charge: 413nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.75mΩ
Mounting: SMD
Gate charge: 413nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SI7148DP-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 28A; Idm: 60A; 96W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 28A
Pulsed drain current: 60A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 28A; Idm: 60A; 96W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 28A
Pulsed drain current: 60A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7148DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 28A
Pulsed drain current: 60A
Power dissipation: 61W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 28A
Pulsed drain current: 60A
Power dissipation: 61W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7149ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 31W; PowerPAK® SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3931 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.05 грн |
| 6+ | 45.4 грн |
| 25+ | 38.61 грн |
| 30+ | 31.99 грн |
| 81+ | 30.25 грн |
| SI7149DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -70A; 44.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7153DN-T1-GE3 |
|
Виробник: VISHAY
SI7153DN-T1-GE3 SMD P channel transistors
SI7153DN-T1-GE3 SMD P channel transistors
на замовлення 5468 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 32.32 грн |
| 47+ | 20.44 грн |
| 128+ | 19.3 грн |
| SI7155DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -100A
Pulsed drain current: -200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -100A
Pulsed drain current: -200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SI7157DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 625nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -300A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 625nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7164DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 6.25mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 75nC
Technology: TrenchFET®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 6.25mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 75nC
Technology: TrenchFET®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SI7172ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 6000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 6000 шт
товар відсутній
| SI7172DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 25A; Idm: 30A; 96W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 25A; Idm: 30A; 96W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7174DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 66.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 80A; 66.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 66.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7178DP-T1-GE3 | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7190ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14.4A
Pulsed drain current: 30A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 14.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14.4A
Pulsed drain current: 30A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
| SI7190DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18.4A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18.4A
Pulsed drain current: 30A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7192DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7212DN-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7212DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 2.6W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7232DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Pulsed drain current: 40A
Power dissipation: 23W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Pulsed drain current: 40A
Power dissipation: 23W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7234DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 46W
Drain-source voltage: 12V
Drain current: 60A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 60A; Idm: 80A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 46W
Drain-source voltage: 12V
Drain current: 60A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
товар відсутній
| SI7252ADP-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 70A
Power dissipation: 21.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 70A
Power dissipation: 21.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
| SI7252DP-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29.2A
Pulsed drain current: 80A
Power dissipation: 29W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29.2A
Pulsed drain current: 80A
Power dissipation: 29W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI7272DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 25A; Idm: 60A
Drain-source voltage: 30V
Drain current: 25A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 25A; Idm: 60A
Drain-source voltage: 30V
Drain current: 25A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній