Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3927) > Сторінка 18 з 66
| Фото | Назва | Виробник | Інформація |
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AOD418 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 13.5A/36A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD4180 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 10A/54A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD4180 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 10A/54A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD4182 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 8.5A/53A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD4182 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 8.5A/53A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD4182_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V TO-252 Part Status: Obsolete Supplier Device Package: TO-252 (DPAK) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD4184A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 13A/50A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD4184A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 13A/50A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| AOD4184L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| AOD4184L_002 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| AOD4184L_DELTA | Alpha & Omega Semiconductor Inc. |
Description: MOSFET Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AOD4185 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V 40A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V |
на замовлення 101543 шт: термін постачання 21-31 дні (днів) |
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AOD4185 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V 40A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V |
на замовлення 101300 шт: термін постачання 21-31 дні (днів) |
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| AOD4185_003 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V TO252Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| AOD4185_DELTA | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V TO252Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AOD4185L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CHANNEL 40V 40A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| AOD4185L_003 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CHANNEL 40V 40A TO252 Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| AOD4185L_DELTA | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V TO252Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AOD4186 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 10A/35A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD4189 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V 40A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V |
на замовлення 52290 шт: термін постачання 21-31 дні (днів) |
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AOD4189 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V 40A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V |
на замовлення 52726 шт: термін постачання 21-31 дні (днів) |
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AOD418G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 13.5A/36A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD421 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 12.5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta), 18.8W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD421_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 12.5A TO252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta), 18.8W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD423 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 15A/70A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 20V Power Dissipation (Max): 2.5W (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD424 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 18A/45A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 4.5V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V |
на замовлення 47500 шт: термін постачання 21-31 дні (днів) |
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AOD424 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 18A/45A TO252Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 4.5V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 53313 шт: термін постачання 21-31 дні (днів) |
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AOD424G | Alpha & Omega Semiconductor Inc. |
Description: NInput Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 6.2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 4.5V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 46A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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AOD425 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 9A/50A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V |
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В кошику од. на суму грн. | ||||||||||||
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AOD425 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 9A/50A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V |
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В кошику од. на суму грн. | ||||||||||||
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AOD425_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 9A/50A TO252 Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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AOD4286 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 100V 4A TO252Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.9V @ 250µA Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD442 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 7A/37A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V |
на замовлення 322611 шт: термін постачання 21-31 дні (днів) |
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AOD442 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 7A/37A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V |
на замовлення 320000 шт: термін постачання 21-31 дні (днів) |
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AOD442G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 13A/40A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V |
на замовлення 34041 шт: термін постачання 21-31 дні (днів) |
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AOD442G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 13A/40A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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AOD444 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 4A/12A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V |
на замовлення 73668 шт: термін постачання 21-31 дні (днів) |
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AOD444 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 4A/12A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V |
на замовлення 72500 шт: термін постачання 21-31 дні (днів) |
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AOD4454 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 3A/20A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V |
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В кошику од. на суму грн. | ||||||||||||
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AOD446 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 75V 10A TO252Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 20V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||
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AOD446_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V TO-252 |
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В кошику од. на суму грн. | ||||||||||||
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AOD450 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 200V 3.8A TO252Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 3.8A, 15V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 3.82 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 6V @ 250µA |
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В кошику од. на суму грн. | ||||||||||||
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AOD450 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 200V 3.8A TO252Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 3.8A, 15V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 3.82 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 6V @ 250µA |
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В кошику од. на суму грн. | ||||||||||||
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AOD4504 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 200V 1.5A/6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 42.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
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AOD4504 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 200V 1.5A/6A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 42.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
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AOD450A70 | Alpha & Omega Semiconductor Inc. |
Description: NInput Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||
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AOD452 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 55A TO252Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 51.5W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 12.5 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252 (DPAK) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||||
| AOD452AL_008 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 55A TO252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AOD454A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 20A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V |
на замовлення 63122 шт: термін постачання 21-31 дні (днів) |
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AOD454A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 20A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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| AOD454AL | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 12A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AOD456 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 50A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD456A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 50A TO252Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 12.5 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AOD458 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 250V 14A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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AOD464 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 105V 40A TO252Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 105 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
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AOD464 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 105V 40A TO252Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 105 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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AOD468 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 300V 11.5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V |
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AOD468 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 300V 11.5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V |
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AOD472 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 55A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 12.5 V |
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AOD472A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 18A/46A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 12.5 V |
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| AOD418 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
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| AOD4180 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 10A/54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
Description: MOSFET N-CH 80V 10A/54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
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| AOD4180 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 10A/54A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
Description: MOSFET N-CH 80V 10A/54A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
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| AOD4182 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 8.5A/53A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 40 V
Description: MOSFET N-CH 80V 8.5A/53A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 40 V
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| AOD4182 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 8.5A/53A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 40 V
Description: MOSFET N-CH 80V 8.5A/53A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 40 V
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| AOD4182_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V TO-252
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V TO-252
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD4184A |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 13A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 13A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
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| AOD4184A |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 13A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 13A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
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| AOD4184L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
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| AOD4184L_002 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
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| AOD4185 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
Description: MOSFET P-CH 40V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
на замовлення 101543 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.36 грн |
| 10+ | 49.42 грн |
| 100+ | 32.57 грн |
| 500+ | 23.75 грн |
| 1000+ | 21.56 грн |
| AOD4185 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
Description: MOSFET P-CH 40V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
на замовлення 101300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.23 грн |
| 5000+ | 18.88 грн |
| 7500+ | 18.08 грн |
| 12500+ | 16.13 грн |
| 17500+ | 16.04 грн |
| AOD4185_003 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V TO252
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Part Status: Obsolete
Description: MOSFET P-CH 40V TO252
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Part Status: Obsolete
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| AOD4185_DELTA |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V TO252
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Part Status: Obsolete
Description: MOSFET P-CH 40V TO252
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Part Status: Obsolete
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| AOD4185L |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CHANNEL 40V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
Description: MOSFET P-CHANNEL 40V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
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| AOD4185L_003 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CHANNEL 40V 40A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CHANNEL 40V 40A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD4185L_DELTA |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V TO252
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Part Status: Obsolete
Description: MOSFET P-CH 40V TO252
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Part Status: Obsolete
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| AOD4186 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 10A/35A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Description: MOSFET N-CH 40V 10A/35A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
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| AOD4189 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V
Description: MOSFET P-CH 40V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V
на замовлення 52290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.62 грн |
| 5000+ | 14.70 грн |
| 7500+ | 14.04 грн |
| 12500+ | 12.47 грн |
| 17500+ | 12.06 грн |
| 25000+ | 11.65 грн |
| AOD4189 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V
Description: MOSFET P-CH 40V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V
на замовлення 52726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.50 грн |
| 10+ | 40.08 грн |
| 100+ | 26.08 грн |
| 500+ | 18.82 грн |
| 1000+ | 16.99 грн |
| AOD418G |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
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| AOD421 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 12.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V
Description: MOSFET P-CH 20V 12.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V
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| AOD421_001 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 12.5A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V
Description: MOSFET P-CH 20V 12.5A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V
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| AOD423 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 15A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 20V
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Description: MOSFET P-CH 30V 15A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 20V
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
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| AOD424 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 18A/45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Description: MOSFET N-CH 20V 18A/45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 22.19 грн |
| AOD424 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 18A/45A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 18A/45A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 53313 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.36 грн |
| 10+ | 59.97 грн |
| 100+ | 39.66 грн |
| 500+ | 29.03 грн |
| 1000+ | 26.39 грн |
| AOD424G |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD425 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 9A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Description: MOSFET P-CH 30V 9A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
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| AOD425 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 9A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Description: MOSFET P-CH 30V 9A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
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| AOD425_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 9A/50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 9A/50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD4286 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 100V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD442 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 7A/37A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
Description: MOSFET N-CH 60V 7A/37A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
на замовлення 322611 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.89 грн |
| 10+ | 45.65 грн |
| 100+ | 29.97 грн |
| 500+ | 21.80 грн |
| 1000+ | 19.76 грн |
| AOD442 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 7A/37A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
Description: MOSFET N-CH 60V 7A/37A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
на замовлення 320000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 19.43 грн |
| 5000+ | 17.25 грн |
| 7500+ | 16.51 грн |
| 12500+ | 14.72 грн |
| 17500+ | 14.47 грн |
| AOD442G |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 13A/40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V
Description: MOSFET N-CH 60V 13A/40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V
на замовлення 34041 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.84 грн |
| 10+ | 52.66 грн |
| 100+ | 34.71 грн |
| 500+ | 25.32 грн |
| 1000+ | 22.98 грн |
| AOD442G |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 13A/40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V
Description: MOSFET N-CH 60V 13A/40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 22.63 грн |
| 5000+ | 20.13 грн |
| 7500+ | 19.28 грн |
| 12500+ | 17.20 грн |
| 17500+ | 16.67 грн |
| 25000+ | 16.15 грн |
| AOD444 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 4A/12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Description: MOSFET N-CH 60V 4A/12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
на замовлення 73668 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.45 грн |
| 10+ | 46.33 грн |
| 100+ | 30.35 грн |
| 500+ | 22.02 грн |
| 1000+ | 19.94 грн |
| AOD444 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 4A/12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Description: MOSFET N-CH 60V 4A/12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
на замовлення 72500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 19.57 грн |
| 5000+ | 17.36 грн |
| 7500+ | 16.60 грн |
| 12500+ | 14.78 грн |
| 17500+ | 14.31 грн |
| 25000+ | 13.85 грн |
| AOD4454 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 3A/20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
Description: MOSFET N-CH 150V 3A/20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
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| AOD446 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 75V 10A TO252
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 75V 10A TO252
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD446_001 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 75V TO-252
Description: MOSFET N-CH 75V TO-252
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| AOD450 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 200V 3.8A TO252
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.8A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.82 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 6V @ 250µA
Description: MOSFET N-CH 200V 3.8A TO252
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.8A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.82 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 6V @ 250µA
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| AOD450 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 200V 3.8A TO252
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.8A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.82 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 6V @ 250µA
Description: MOSFET N-CH 200V 3.8A TO252
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.8A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.82 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 6V @ 250µA
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| AOD4504 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 200V 1.5A/6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Description: MOSFET N-CH 200V 1.5A/6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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| AOD4504 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 200V 1.5A/6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Description: MOSFET N-CH 200V 1.5A/6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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| AOD450A70 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD452 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 55A TO252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 51.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 55A TO252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 51.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD452AL_008 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 55A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V
Description: MOSFET N-CH 25V 55A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 12.5 V
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| AOD454A |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Description: MOSFET N-CH 40V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
на замовлення 63122 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.32 грн |
| 10+ | 44.98 грн |
| 100+ | 29.43 грн |
| 500+ | 21.33 грн |
| 1000+ | 19.30 грн |
| AOD454A |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Description: MOSFET N-CH 40V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 18.93 грн |
| 5000+ | 16.78 грн |
| 7500+ | 16.05 грн |
| 12500+ | 14.28 грн |
| 17500+ | 13.82 грн |
| 25000+ | 13.38 грн |
| AOD454AL |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Description: MOSFET N-CH 40V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
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| AOD456 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 50A TO252
Description: MOSFET N-CH 25V 50A TO252
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| AOD456A |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD458 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 250V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N CH 250V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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| AOD464 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 105V 40A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 105 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 105V 40A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 105 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| AOD464 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 105V 40A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 105 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 105V 40A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 105 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| AOD468 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 300V 11.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Description: MOSFET N CH 300V 11.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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| AOD468 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 300V 11.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Description: MOSFET N CH 300V 11.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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| AOD472 |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 12.5 V
Description: MOSFET N-CH 25V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 12.5 V
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| AOD472A |
![]() |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 18A/46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 12.5 V
Description: MOSFET N-CH 25V 18A/46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 12.5 V
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