Продукція > DACO SEMICONDUCTOR > Всі товари виробника DACO SEMICONDUCTOR (634) > Сторінка 2 з 11
Фото | Назва | Виробник | Інформація |
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DACMH200N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W Case: HB9434 Operating temperature: -55...150°C Power dissipation: 980W Semiconductor structure: transistor/transistor Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -10...20V Topology: MOSFET half-bridge Pulsed drain current: 500A Drain-source voltage: 1.2kV Drain current: 125A On-state resistance: 15mΩ |
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DACMH200N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W Case: HB9434 Operating temperature: -55...150°C Power dissipation: 980W Semiconductor structure: transistor/transistor Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -10...20V Topology: MOSFET half-bridge Pulsed drain current: 500A Drain-source voltage: 1.2kV Drain current: 125A On-state resistance: 15mΩ кількість в упаковці: 1 шт |
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DACMH40N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Case: HB9434 Semiconductor structure: transistor/transistor Operating temperature: -55...150°C Electrical mounting: screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor |
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DACMH40N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Case: HB9434 Semiconductor structure: transistor/transistor Operating temperature: -55...150°C Electrical mounting: screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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DACMH80N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 50A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: 250A Power dissipation: 460W Technology: SiC Gate-source voltage: -10...20V Operating temperature: -55...150°C Mechanical mounting: screw |
товар відсутній |
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DACMH80N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 50A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: 250A Power dissipation: 460W Technology: SiC Gate-source voltage: -10...20V Operating temperature: -55...150°C Mechanical mounting: screw кількість в упаковці: 1 шт |
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DACMI120N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 76A Pulsed drain current: 300A Power dissipation: 500W Case: SOT227B Gate-source voltage: -10...20V On-state resistance: 25mΩ Semiconductor structure: single transistor Operating temperature: -55...150°C Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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DACMI120N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 76A Pulsed drain current: 300A Power dissipation: 500W Case: SOT227B Gate-source voltage: -10...20V On-state resistance: 25mΩ Semiconductor structure: single transistor Operating temperature: -55...150°C Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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DACMI160N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A Type of module: MOSFET transistor Pulsed drain current: 400A Power dissipation: 580W Polarisation: unipolar Operating temperature: -55...150°C Technology: SiC Drain current: 110A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: -5...20V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 20mΩ |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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DACMI160N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A Type of module: MOSFET transistor Pulsed drain current: 400A Power dissipation: 580W Polarisation: unipolar Operating temperature: -55...150°C Technology: SiC Drain current: 110A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: -5...20V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 20mΩ кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 7-14 дні (днів) |
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DACMI200N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Pulsed drain current: 500A Power dissipation: 980W Polarisation: unipolar Operating temperature: -55...150°C Technology: SiC Drain current: 125A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: -10...20V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 15mΩ |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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DACMI200N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Pulsed drain current: 500A Power dissipation: 980W Polarisation: unipolar Operating temperature: -55...150°C Technology: SiC Drain current: 125A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: -10...20V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 15mΩ кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 7-14 дні (днів) |
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DACMI40N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Case: SOT227B Semiconductor structure: single transistor Operating temperature: -55...150°C Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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DACMI40N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Case: SOT227B Semiconductor structure: single transistor Operating temperature: -55...150°C Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 7-14 дні (днів) |
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DACMI80N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 50A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: 250A Power dissipation: 460W Technology: SiC Gate-source voltage: -10...20V Operating temperature: -55...150°C Mechanical mounting: screw |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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DACMI80N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 50A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: 250A Power dissipation: 460W Technology: SiC Gate-source voltage: -10...20V Operating temperature: -55...150°C Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 7-14 дні (днів) |
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DACSB400120CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 1.2kV; If: 200Ax2; Ifsm: 2kA Case: Twin tower B Semiconductor structure: common cathode; double Load current: 200A x2 Max. forward voltage: 1.6V Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. forward impulse current: 2kA |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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DACSB400120CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 1.2kV; If: 200Ax2; Ifsm: 2kA Case: Twin tower B Semiconductor structure: common cathode; double Load current: 200A x2 Max. forward voltage: 1.6V Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. forward impulse current: 2kA кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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DACSB40060CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 200Ax2; screw; SiC Case: Twin tower B Semiconductor structure: common cathode; double Load current: 200A x2 Max. forward voltage: 1.45V Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. forward impulse current: 1.75kA |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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DACSB40060CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 200Ax2; screw; SiC Case: Twin tower B Semiconductor structure: common cathode; double Load current: 200A x2 Max. forward voltage: 1.45V Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. forward impulse current: 1.75kA кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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DACSB600120CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 1.2kV; If: 300Ax2; screw Case: Twin tower B Semiconductor structure: common cathode; double Load current: 300A x2 Max. forward voltage: 1.6V Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. forward impulse current: 3.5kA |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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DACSB600120CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 1.2kV; If: 300Ax2; screw Case: Twin tower B Semiconductor structure: common cathode; double Load current: 300A x2 Max. forward voltage: 1.6V Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. forward impulse current: 3.5kA кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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DACSB60060CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 300Ax2; Ifsm: 2.5kA Case: Twin tower B Semiconductor structure: common cathode; double Load current: 300A x2 Max. forward voltage: 1.45V Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. forward impulse current: 2.5kA |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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DACSB60060CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 300Ax2; Ifsm: 2.5kA Case: Twin tower B Semiconductor structure: common cathode; double Load current: 300A x2 Max. forward voltage: 1.45V Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. forward impulse current: 2.5kA кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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DACSB80060CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 400Ax2; Ifsm: 3kA Type of module: diode Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Case: Twin tower B Max. off-state voltage: 0.6kV Max. forward voltage: 1.45V Load current: 400A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 3kA |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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DACSB80060CT | DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 400Ax2; Ifsm: 3kA Type of module: diode Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Case: Twin tower B Max. off-state voltage: 0.6kV Max. forward voltage: 1.45V Load current: 400A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 3kA кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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DAGNH1001200 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: HW9434 Power dissipation: 555W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
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DAGNH1001200 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: HW9434 Power dissipation: 555W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A кількість в упаковці: 1 шт |
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DAGNH100600 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: HW9434 Power dissipation: 400W Pulsed collector current: 200A Collector current: 100A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge |
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DAGNH100600 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: HW9434 Power dissipation: 400W Pulsed collector current: 200A Collector current: 100A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge кількість в упаковці: 1 шт |
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DAGNH1501200 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: HW9434 Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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DAGNH1501200 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: HW9434 Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A кількість в упаковці: 1 шт |
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DAGNH2001200 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: HW9434 Power dissipation: 1.3kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
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DAGNH2001200 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: HW9434 Power dissipation: 1.3kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A кількість в упаковці: 1 шт |
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DAGNH200600 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: HW9434 Power dissipation: 780W Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Topology: IGBT half-bridge Technology: NPT Mechanical mounting: screw Pulsed collector current: 400A Max. off-state voltage: 0.6kV Electrical mounting: screw |
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DAGNH200600 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: HW9434 Power dissipation: 780W Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Topology: IGBT half-bridge Technology: NPT Mechanical mounting: screw Pulsed collector current: 400A Max. off-state voltage: 0.6kV Electrical mounting: screw кількість в упаковці: 1 шт |
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DAGNH751200 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Case: HW9434 Power dissipation: 350W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A |
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DAGNH751200 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Case: HW9434 Power dissipation: 350W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A кількість в упаковці: 1 шт |
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DAGNH75600 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Case: HW9434 Power dissipation: 350W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A |
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DAGNH75600 | DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Case: HW9434 Power dissipation: 350W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A кількість в упаковці: 1 шт |
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DAMH160N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 110A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 110A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw |
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DAMH160N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 110A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 110A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw кількість в упаковці: 1 шт |
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DAMH220N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 140A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 140A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw |
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DAMH220N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 140A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 140A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw кількість в упаковці: 1 шт |
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DAMH250N150 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 150V; 150A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 150V Drain current: 150A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw |
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DAMH250N150 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 150V; 150A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 150V Drain current: 150A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw кількість в упаковці: 1 шт |
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DAMH280N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 180A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 180A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw |
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DAMH280N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 180A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 180A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw кількість в упаковці: 1 шт |
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DAMH300N150 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 150V; 180A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 150V Drain current: 180A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw |
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DAMH300N150 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 150V; 180A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 150V Drain current: 180A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw кількість в упаковці: 1 шт |
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DAMH320N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 250A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 250A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw |
товар відсутній |
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DAMH320N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 250A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 250A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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DAMH320N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 190A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 190A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw |
товар відсутній |
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DAMH320N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 190A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 190A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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DAMH360N150 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 150V; 220A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 150V Drain current: 220A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw |
товар відсутній |
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DAMH360N150 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 150V; 220A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 150V Drain current: 220A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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DAMH360N60 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 60V; 300A; HB9434; screw; screw Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Case: HB9434 Semiconductor structure: transistor/transistor Electrical mounting: screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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DAMH360N60 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 60V; 300A; HB9434; screw; screw Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Case: HB9434 Semiconductor structure: transistor/transistor Electrical mounting: screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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DAMH380N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 220A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 220A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw |
товар відсутній |
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DAMH380N200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 220A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 220A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
DACMH200N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Case: HB9434
Operating temperature: -55...150°C
Power dissipation: 980W
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 500A
Drain-source voltage: 1.2kV
Drain current: 125A
On-state resistance: 15mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Case: HB9434
Operating temperature: -55...150°C
Power dissipation: 980W
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 500A
Drain-source voltage: 1.2kV
Drain current: 125A
On-state resistance: 15mΩ
товар відсутній
DACMH200N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Case: HB9434
Operating temperature: -55...150°C
Power dissipation: 980W
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 500A
Drain-source voltage: 1.2kV
Drain current: 125A
On-state resistance: 15mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Case: HB9434
Operating temperature: -55...150°C
Power dissipation: 980W
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 500A
Drain-source voltage: 1.2kV
Drain current: 125A
On-state resistance: 15mΩ
кількість в упаковці: 1 шт
товар відсутній
DACMH40N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: HB9434
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: HB9434
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
DACMH40N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: HB9434
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: HB9434
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
DACMH80N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
товар відсутній
DACMH80N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DACMI120N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 76A
Pulsed drain current: 300A
Power dissipation: 500W
Case: SOT227B
Gate-source voltage: -10...20V
On-state resistance: 25mΩ
Semiconductor structure: single transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 76A
Pulsed drain current: 300A
Power dissipation: 500W
Case: SOT227B
Gate-source voltage: -10...20V
On-state resistance: 25mΩ
Semiconductor structure: single transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
DACMI120N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 76A
Pulsed drain current: 300A
Power dissipation: 500W
Case: SOT227B
Gate-source voltage: -10...20V
On-state resistance: 25mΩ
Semiconductor structure: single transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 76A
Pulsed drain current: 300A
Power dissipation: 500W
Case: SOT227B
Gate-source voltage: -10...20V
On-state resistance: 25mΩ
Semiconductor structure: single transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
DACMI160N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Pulsed drain current: 400A
Power dissipation: 580W
Polarisation: unipolar
Operating temperature: -55...150°C
Technology: SiC
Drain current: 110A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -5...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 20mΩ
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Pulsed drain current: 400A
Power dissipation: 580W
Polarisation: unipolar
Operating temperature: -55...150°C
Technology: SiC
Drain current: 110A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -5...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 20mΩ
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 9566.11 грн |
DACMI160N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Pulsed drain current: 400A
Power dissipation: 580W
Polarisation: unipolar
Operating temperature: -55...150°C
Technology: SiC
Drain current: 110A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -5...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 20mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Pulsed drain current: 400A
Power dissipation: 580W
Polarisation: unipolar
Operating temperature: -55...150°C
Technology: SiC
Drain current: 110A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -5...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 20mΩ
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 11479.34 грн |
DACMI200N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Pulsed drain current: 500A
Power dissipation: 980W
Polarisation: unipolar
Operating temperature: -55...150°C
Technology: SiC
Drain current: 125A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -10...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 15mΩ
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Pulsed drain current: 500A
Power dissipation: 980W
Polarisation: unipolar
Operating temperature: -55...150°C
Technology: SiC
Drain current: 125A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -10...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 15mΩ
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 22153.34 грн |
DACMI200N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Pulsed drain current: 500A
Power dissipation: 980W
Polarisation: unipolar
Operating temperature: -55...150°C
Technology: SiC
Drain current: 125A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -10...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 15mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Pulsed drain current: 500A
Power dissipation: 980W
Polarisation: unipolar
Operating temperature: -55...150°C
Technology: SiC
Drain current: 125A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -10...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 15mΩ
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 26584 грн |
DACMI40N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Semiconductor structure: single transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Semiconductor structure: single transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3215.98 грн |
DACMI40N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Semiconductor structure: single transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; SiC; screw
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Semiconductor structure: single transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3859.17 грн |
DACMI80N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 5146.01 грн |
DACMI80N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6175.21 грн |
DACSB400120CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 200Ax2; Ifsm: 2kA
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 200A x2
Max. forward voltage: 1.6V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 2kA
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 200Ax2; Ifsm: 2kA
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 200A x2
Max. forward voltage: 1.6V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 2kA
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 15454.38 грн |
3+ | 14349.81 грн |
DACSB400120CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 200Ax2; Ifsm: 2kA
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 200A x2
Max. forward voltage: 1.6V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 2kA
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 200Ax2; Ifsm: 2kA
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 200A x2
Max. forward voltage: 1.6V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 2kA
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 18545.26 грн |
3+ | 17882.07 грн |
DACSB40060CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 200Ax2; screw; SiC
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 200A x2
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 1.75kA
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 200Ax2; screw; SiC
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 200A x2
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 1.75kA
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 12635.57 грн |
DACSB40060CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 200Ax2; screw; SiC
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 200A x2
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 1.75kA
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 200Ax2; screw; SiC
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 200A x2
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 1.75kA
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 15162.68 грн |
DACSB600120CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 300Ax2; screw
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 300A x2
Max. forward voltage: 1.6V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 3.5kA
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 300Ax2; screw
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 300A x2
Max. forward voltage: 1.6V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 3.5kA
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 22840.56 грн |
DACSB600120CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 300Ax2; screw
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 300A x2
Max. forward voltage: 1.6V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 3.5kA
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 300Ax2; screw
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 300A x2
Max. forward voltage: 1.6V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 3.5kA
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 27408.68 грн |
DACSB60060CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300Ax2; Ifsm: 2.5kA
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 300A x2
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 2.5kA
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300Ax2; Ifsm: 2.5kA
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 300A x2
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 2.5kA
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 17591.92 грн |
DACSB60060CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300Ax2; Ifsm: 2.5kA
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 300A x2
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 2.5kA
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 300Ax2; Ifsm: 2.5kA
Case: Twin tower B
Semiconductor structure: common cathode; double
Load current: 300A x2
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Technology: SiC
Max. forward impulse current: 2.5kA
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 21110.3 грн |
DACSB80060CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 400Ax2; Ifsm: 3kA
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Case: Twin tower B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 400A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 3kA
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 400Ax2; Ifsm: 3kA
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Case: Twin tower B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 400A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 3kA
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 20790.79 грн |
3+ | 19305.04 грн |
DACSB80060CT |
Виробник: DACO Semiconductor
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 400Ax2; Ifsm: 3kA
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Case: Twin tower B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 400A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 3kA
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 400Ax2; Ifsm: 3kA
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Case: Twin tower B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 400A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 3kA
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 24948.95 грн |
3+ | 24057.05 грн |
DAGNH1001200 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 555W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 555W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
товар відсутній
DAGNH1001200 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 555W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 555W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
товар відсутній
DAGNH100600 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 400W
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 400W
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
товар відсутній
DAGNH100600 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 400W
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 400W
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
товар відсутній
DAGNH1501200 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: HW9434
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: HW9434
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
DAGNH1501200 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: HW9434
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: HW9434
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
товар відсутній
DAGNH2001200 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 1.3kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 1.3kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
товар відсутній
DAGNH2001200 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 1.3kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 1.3kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 1 шт
товар відсутній
DAGNH200600 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 780W
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 780W
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
товар відсутній
DAGNH200600 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 780W
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: HW9434
Power dissipation: 780W
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAGNH751200 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: HW9434
Power dissipation: 350W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: HW9434
Power dissipation: 350W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
товар відсутній
DAGNH751200 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: HW9434
Power dissipation: 350W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: HW9434
Power dissipation: 350W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
кількість в упаковці: 1 шт
товар відсутній
DAGNH75600 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: HW9434
Power dissipation: 350W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: HW9434
Power dissipation: 350W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
товар відсутній
DAGNH75600 |
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: HW9434
Power dissipation: 350W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: HW9434
Power dissipation: 350W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
кількість в упаковці: 1 шт
товар відсутній
DAMH160N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 110A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 110A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 110A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 110A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
товар відсутній
DAMH160N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 110A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 110A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 110A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 110A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMH220N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 140A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 140A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 140A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 140A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
товар відсутній
DAMH220N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 140A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 140A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 140A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 140A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMH250N150 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 150A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 150A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 150A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 150A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
товар відсутній
DAMH250N150 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 150A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 150A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 150A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 150A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMH280N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 180A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 180A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 180A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 180A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
товар відсутній
DAMH280N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 180A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 180A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 180A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 180A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMH300N150 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 180A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 180A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 180A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 180A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
товар відсутній
DAMH300N150 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 180A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 180A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 180A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 180A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMH320N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 250A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 250A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 250A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 250A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
товар відсутній
DAMH320N100 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 250A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 250A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 250A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 250A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMH320N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 190A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 190A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 190A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 190A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
товар відсутній
DAMH320N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 190A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 190A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 190A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 190A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMH360N150 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 220A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 220A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 220A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 220A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
товар відсутній
DAMH360N150 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 220A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 220A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 150V; 220A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 150V
Drain current: 220A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DAMH360N60 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 60V; 300A; HB9434; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: HB9434
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 60V; 300A; HB9434; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: HB9434
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
DAMH360N60 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 60V; 300A; HB9434; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: HB9434
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 60V; 300A; HB9434; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: HB9434
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
DAMH380N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 220A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 220A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 220A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 220A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
товар відсутній
DAMH380N200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 220A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 220A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 220A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 220A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній