Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74460) > Сторінка 1235 з 1241

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MBRB10150CT MBRB10150CT DIODES INCORPORATED MBRB10150CT.pdf MBR10150CT(-1)%20MBRB10150CT%20N0036%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 5Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 10mA
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MBRB10150CT-13 MBRB10150CT-13 DIODES INCORPORATED MBRB10150CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 10mA
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FCX605TA FCX605TA DIODES INCORPORATED FCX605.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 900mW; SOT89
Kind of transistor: Darlington
Type of transistor: NPN
Current gain: 2000...100000
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector current: 1A
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 0.9W
Polarisation: bipolar
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KBP306G DIODES INCORPORATED KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AP7365-12WG-7 AP7365-12WG-7 DIODES INCORPORATED AP7365.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7365
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Integrated circuit features: shutdown mode control input
на замовлення 995 шт:
термін постачання 14-30 дні (днів)
18+24.89 грн
23+18.65 грн
25+16.75 грн
29+14.69 грн
100+12.05 грн
124+7.59 грн
341+7.18 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
AP7331-25WG-7AP7331-25WG-7
AP7331-25WG-7AP7331-25WG-7
 AP7331-25WG-7 DIODES INCORPORATED AP7331.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7331
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Integrated circuit features: shutdown mode control input
на замовлення 1241 шт:
термін постачання 14-30 дні (днів)
10+44.44 грн
15+29.21 грн
19+22.37 грн
100+10.07 грн
1000+8.34 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
AP7375-33SA-7 AP7375-33SA-7 DIODES INCORPORATED AP7375.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.35A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7375
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...45V
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MMDTA42-7-F MMDTA42-7-F DIODES INCORPORATED ds30438.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.5A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT26
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
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AP7362A-33SP-13 DIODES INCORPORATED AP7362.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Input voltage: 2.2...6V
Output voltage: 3.3V
Output current: 1.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7362
Voltage drop: 0.24V
Integrated circuit features: shutdown mode control input
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SBR30A60CT SBR30A60CT DIODES INCORPORATED SBR30A60.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; Ifsm: 250A; TO220AB; tube; SBR®
Type of diode: rectifying
Case: TO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
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SBR30A60CTB-13 SBR30A60CTB-13 DIODES INCORPORATED SBR30A60CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 15Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Case: D2PAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. load current: 30A
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SBR30A60CTBQ-13 SBR30A60CTBQ-13 DIODES INCORPORATED SBR30A60CTBQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SBR®; SMD; 60V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Leakage current: 110µA
Max. forward impulse current: 180A
Kind of package: reel; tape
Application: automotive industry
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SBR30A60CTFP DIODES INCORPORATED SBR30A60.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; Ifsm: 250A; ITO220AB; tube; SBR®
Type of diode: rectifying
Case: ITO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
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BC847AT-7-F BC847AT-7-F DIODES INCORPORATED ds30274.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
50+8.89 грн
85+4.87 грн
125+3.32 грн
151+2.75 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BC847A-7-FBC847A-7-F
BC847A-7-FBC847A-7-F
 BC847A-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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BC847AQ-7-F BC847AQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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ZXMP6A18KTC ZXMP6A18KTC DIODES INCORPORATED ZXMP6A18K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10.4A
Power dissipation: 4.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
4+125.32 грн
5+87.48 грн
10+65.20 грн
15+61.57 грн
25+57.44 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMN6040SSS-13 DMN6040SSS-13 DIODES INCORPORATED DMN6040SSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
14+33.77 грн
17+25.09 грн
18+23.11 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
DMG6602SVT-7 DMG6602SVT-7 DIODES INCORPORATED DMG6602SVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Power dissipation: 1.112W
Polarisation: unipolar
Drain current: 2.8/-3.4A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: TSOT26
On-state resistance: 0.06/0.095Ω
на замовлення 2817 шт:
термін постачання 14-30 дні (днів)
15+30.22 грн
26+15.93 грн
50+13.04 грн
100+11.55 грн
500+8.17 грн
1000+7.59 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
AL1697-20CS7-13 DIODES INCORPORATED AL1697.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; SO7; 2A; Ch: 1; 7÷25VDC
Mounting: SMD
Output current: 2A
Type of integrated circuit: driver
Operating temperature: -40...105°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO7
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 7...25V DC
Topology: single transistor
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AL5890-15D-13 AL5890-15D-13 DIODES INCORPORATED AL5890.pdf Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AP7363-25D-13 AP7363-25D-13 DIODES INCORPORATED AP7363.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.5V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: AP7363
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...5.5V
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AP2141WG-7 AP2141WG-7 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 0.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT25
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
14+32.88 грн
17+25.09 грн
19+22.20 грн
25+18.90 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
AP21410FM-7 AP21410FM-7 DIODES INCORPORATED AP21410_21510.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
на замовлення 2901 шт:
термін постачання 14-30 дні (днів)
20+23.11 грн
25+16.84 грн
28+14.94 грн
32+12.96 грн
50+11.72 грн
100+10.73 грн
250+9.90 грн
500+9.74 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
AP2141DFMG-7 DIODES INCORPORATED AP2141D_51D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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AP2141DSG-13 AP2141DSG-13 DIODES INCORPORATED AP2141D_51D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
AP2141FMG-7 DIODES INCORPORATED AP2141-51.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMN24H11DS-7 DMN24H11DS-7 DIODES INCORPORATED DMN24H11DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 528 шт:
термін постачання 14-30 дні (днів)
9+54.21 грн
11+39.61 грн
13+33.92 грн
25+27.23 грн
50+23.11 грн
100+19.97 грн
500+15.19 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DMN24H11DSQ-7 DMN24H11DSQ-7 DIODES INCORPORATED DMN24H11DSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN24H11DSQ-13 DMN24H11DSQ-13 DIODES INCORPORATED DMN24H11DSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
P4SMAJ20ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 20V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: D-FLAT
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
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DMP2021UTS-13 DIODES INCORPORATED DMP2021UTS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8
Mounting: SMD
Pulsed drain current: -55A
Power dissipation: 1.3W
Gate charge: 59nC
Polarisation: unipolar
Drain current: -5.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: TSSOP8
On-state resistance: 40mΩ
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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ZXMP6A17E6QTA ZXMP6A17E6QTA DIODES INCORPORATED ZXMP6A17E6Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.6A; 1.92W; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel
Power dissipation: 1.92W
Pulsed drain current: -13.6A
Gate charge: 17.7nC
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
на замовлення 2954 шт:
термін постачання 14-30 дні (днів)
7+68.43 грн
14+31.20 грн
25+28.88 грн
50+27.07 грн
100+25.42 грн
500+22.20 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
AP2552AW6-7 AP2552AW6-7 DIODES INCORPORATED AP255x.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Output current: 2.1A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 135mΩ
Supply voltage: 2.7...5.5V DC
на замовлення 826 шт:
термін постачання 14-30 дні (днів)
15+31.11 грн
19+22.04 грн
25+19.56 грн
50+17.83 грн
100+16.26 грн
250+14.52 грн
500+13.53 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
AP22802BW5-7 AP22802BW5-7 DIODES INCORPORATED AP22802.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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P4SMAJ70ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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ZXGD3003E6TA ZXGD3003E6TA DIODES INCORPORATED ZXGD3003E6.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -5...5A
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 77ns
Pulse fall time: 85ns
Kind of package: reel; tape
Supply voltage: 40V
Kind of output: non-inverting
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FZT956TA FZT956TA DIODES INCORPORATED FZT9556.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
4+139.54 грн
10+67.10 грн
25+61.40 грн
50+56.94 грн
100+52.24 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
FZT958TA FZT958TA DIODES INCORPORATED FZT958.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Current gain: 100...300
Frequency: 85MHz
на замовлення 724 шт:
термін постачання 14-30 дні (днів)
4+122.65 грн
10+46.38 грн
25+42.75 грн
50+40.27 грн
100+38.13 грн
500+33.92 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
FZT956QTA FZT956QTA DIODES INCORPORATED FZT956.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Pulsed collector current: 5A
Application: automotive industry
Current gain: 10...300
Frequency: 110MHz
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SBR60A300CT SBR60A300CT DIODES INCORPORATED SBR60A300CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 235A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.94V
Technology: SBR®
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
2+376.33 грн
5+217.87 грн
12+206.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SBR60A200CT SBR60A200CT DIODES INCORPORATED SBR60A200CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.96V
Max. forward impulse current: 250A
Kind of package: tube
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SMCJ150A-13-F SMCJ150A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BAS16VV-7 BAS16VV-7 DIODES INCORPORATED BAS16VV.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
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BAS16VVQ-7 BAS16VVQ-7 DIODES INCORPORATED BAS16VVQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
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BZT52C11SQ-7-F BZT52C11SQ-7-F DIODES INCORPORATED ds30093.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C11T-7 BZT52C11T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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DMN3032LE-13 DMN3032LE-13 DIODES INCORPORATED DMN3032LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SOT223
On-state resistance: 29mΩ
на замовлення 479 шт:
термін постачання 14-30 дні (днів)
7+66.66 грн
13+32.19 грн
25+29.38 грн
68+13.95 грн
186+13.20 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
2N7002EQ-7-F 2N7002EQ-7-F DIODES INCORPORATED 2N7002EQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Gate charge: 0.5nC
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DDZ27ASF-7 DDZ27ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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B560CQ-13-F DIODES INCORPORATED B520CQ-B560CQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 0.3nF
Max. forward voltage: 0.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 16ns
Application: automotive industry
Leakage current: 20mA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DML1010FDK-7 DIODES INCORPORATED DML1010FDK.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; U-DFN2020-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 8mΩ
Kind of package: reel; tape
Supply voltage: 0.8...4V DC
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SMBJ170A-13-F SMBJ170A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
ZTX601B ZTX601B DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Collector current: 1A
Manufacturer standard package: 4000pcs.
Collector-emitter voltage: 160V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 5000...100000
Frequency: 250MHz
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ZTX603 ZTX603 DIODES INCORPORATED ZTX602.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Collector current: 1A
Manufacturer standard package: 4000pcs.
Collector-emitter voltage: 80V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 500...100000
Frequency: 250MHz
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ZTX601BSTZ ZTX601BSTZ DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 160V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 5000...100000
Frequency: 250MHz
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ZTX601STZ ZTX601STZ DIODES INCORPORATED ZTX600.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 160V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 1000...20000
Frequency: 250MHz
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ZTX603STZ ZTX603STZ DIODES INCORPORATED ZTX602.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 80V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 500...100000
Frequency: 250MHz
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DDC114YU-7-F DDC114YU-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Collector current: 70mA
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
28+16.00 грн
44+9.41 грн
53+7.89 грн
60+6.98 грн
100+6.24 грн
412+2.29 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
DDC114EU-7-F DDC114EU-7-F DIODES INCORPORATED DDC_XXXX_U.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 10kΩ
Collector current: 50mA
на замовлення 1571 шт:
термін постачання 14-30 дні (днів)
30+15.11 грн
42+9.99 грн
100+6.40 грн
445+2.12 грн
1221+2.01 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
MBRB10150CT MBRB10150CT.pdf MBR10150CT(-1)%20MBRB10150CT%20N0036%20REV.A.pdf
MBRB10150CT
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 5Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: tube
Leakage current: 10mA
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MBRB10150CT-13 MBRB10150CT.pdf
MBRB10150CT-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 10mA
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FCX605TA FCX605.pdf
FCX605TA
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 900mW; SOT89
Kind of transistor: Darlington
Type of transistor: NPN
Current gain: 2000...100000
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector current: 1A
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 0.9W
Polarisation: bipolar
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KBP306G KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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AP7365-12WG-7 AP7365.pdf
AP7365-12WG-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.2V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7365
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Integrated circuit features: shutdown mode control input
на замовлення 995 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+24.89 грн
23+18.65 грн
25+16.75 грн
29+14.69 грн
100+12.05 грн
124+7.59 грн
341+7.18 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
AP7331-25WG-7 AP7331.pdf
AP7331-25WG-7AP7331-25WG-7
AP7331-25WG-7AP7331-25WG-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 2.5V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7331
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Integrated circuit features: shutdown mode control input
на замовлення 1241 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+44.44 грн
15+29.21 грн
19+22.37 грн
100+10.07 грн
1000+8.34 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
AP7375-33SA-7 AP7375.pdf
AP7375-33SA-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.35A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7375
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...45V
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MMDTA42-7-F ds30438.pdf
MMDTA42-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.5A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT26
Current gain: 25...40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
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AP7362A-33SP-13 AP7362.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; SO8-EP; SMD
Type of integrated circuit: voltage regulator
Input voltage: 2.2...6V
Output voltage: 3.3V
Output current: 1.5A
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7362
Voltage drop: 0.24V
Integrated circuit features: shutdown mode control input
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SBR30A60CT SBR30A60.pdf
SBR30A60CT
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; Ifsm: 250A; TO220AB; tube; SBR®
Type of diode: rectifying
Case: TO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
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SBR30A60CTB-13 SBR30A60CTB.pdf
SBR30A60CTB-13
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 15Ax2; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Case: D2PAK
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. load current: 30A
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SBR30A60CTBQ-13 SBR30A60CTBQ.pdf
SBR30A60CTBQ-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SBR®; SMD; 60V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Leakage current: 110µA
Max. forward impulse current: 180A
Kind of package: reel; tape
Application: automotive industry
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SBR30A60CTFP SBR30A60.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; Ifsm: 250A; ITO220AB; tube; SBR®
Type of diode: rectifying
Case: ITO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
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BC847AT-7-F ds30274.pdf
BC847AT-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+8.89 грн
85+4.87 грн
125+3.32 грн
151+2.75 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BC847A-7-F ds11108.pdf
BC847A-7-FBC847A-7-F
BC847A-7-FBC847A-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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BC847AQ-7-F ds11108.pdf
BC847AQ-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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ZXMP6A18KTC ZXMP6A18K.pdf
ZXMP6A18KTC
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10.4A
Power dissipation: 4.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+125.32 грн
5+87.48 грн
10+65.20 грн
15+61.57 грн
25+57.44 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMN6040SSS-13 DMN6040SSS.pdf
DMN6040SSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.4A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.4A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+33.77 грн
17+25.09 грн
18+23.11 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
DMG6602SVT-7 DMG6602SVT-7.pdf
DMG6602SVT-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Power dissipation: 1.112W
Polarisation: unipolar
Drain current: 2.8/-3.4A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: TSOT26
On-state resistance: 0.06/0.095Ω
на замовлення 2817 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+30.22 грн
26+15.93 грн
50+13.04 грн
100+11.55 грн
500+8.17 грн
1000+7.59 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
AL1697-20CS7-13 AL1697.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; SO7; 2A; Ch: 1; 7÷25VDC
Mounting: SMD
Output current: 2A
Type of integrated circuit: driver
Operating temperature: -40...105°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO7
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 7...25V DC
Topology: single transistor
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AL5890-15D-13 AL5890.pdf
AL5890-15D-13
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; TO252; 15mA; Ch: 1
Type of integrated circuit: driver
Output current: 15mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 7...400V DC
Topology: single transistor
Kind of integrated circuit: LED driver
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AP7363-25D-13 AP7363.pdf
AP7363-25D-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.5V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: AP7363
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.2...5.5V
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AP2141WG-7 AP2141-51.pdf
AP2141WG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Output current: 0.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT25
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 95mΩ
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+32.88 грн
17+25.09 грн
19+22.20 грн
25+18.90 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
AP21410FM-7 AP21410_21510.pdf
AP21410FM-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
на замовлення 2901 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+23.11 грн
25+16.84 грн
28+14.94 грн
32+12.96 грн
50+11.72 грн
100+10.73 грн
250+9.90 грн
500+9.74 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
AP2141DFMG-7 AP2141D_51D.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AP2141DSG-13 AP2141D_51D.pdf
AP2141DSG-13
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
AP2141FMG-7 AP2141-51.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DMN24H11DS-7 DMN24H11DS.pdf
DMN24H11DS-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 528 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+54.21 грн
11+39.61 грн
13+33.92 грн
25+27.23 грн
50+23.11 грн
100+19.97 грн
500+15.19 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DMN24H11DSQ-7 DMN24H11DSQ.pdf
DMN24H11DSQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN24H11DSQ-13 DMN24H11DSQ.pdf
DMN24H11DSQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.22A
Pulsed drain current: 0.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
P4SMAJ20ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 20V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: D-FLAT
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
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DMP2021UTS-13 DMP2021UTS.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8
Mounting: SMD
Pulsed drain current: -55A
Power dissipation: 1.3W
Gate charge: 59nC
Polarisation: unipolar
Drain current: -5.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 13 inch reel; tape
Case: TSSOP8
On-state resistance: 40mΩ
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ZXMP6A17E6QTA ZXMP6A17E6Q.pdf
ZXMP6A17E6QTA
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.6A; 1.92W; SOT26
Case: SOT26
Mounting: SMD
Kind of package: reel
Power dissipation: 1.92W
Pulsed drain current: -13.6A
Gate charge: 17.7nC
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
на замовлення 2954 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+68.43 грн
14+31.20 грн
25+28.88 грн
50+27.07 грн
100+25.42 грн
500+22.20 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
AP2552AW6-7 AP255x.pdf
AP2552AW6-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Output current: 2.1A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of integrated circuit: high-side; USB switch
Number of channels: 1
On-state resistance: 135mΩ
Supply voltage: 2.7...5.5V DC
на замовлення 826 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+31.11 грн
19+22.04 грн
25+19.56 грн
50+17.83 грн
100+16.26 грн
250+14.52 грн
500+13.53 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
AP22802BW5-7 AP22802.pdf
AP22802BW5-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
товару немає в наявності
В кошику  од. на суму  грн.
P4SMAJ70ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
ZXGD3003E6TA ZXGD3003E6.pdf
ZXGD3003E6TA
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -5...5A
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 77ns
Pulse fall time: 85ns
Kind of package: reel; tape
Supply voltage: 40V
Kind of output: non-inverting
товару немає в наявності
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FZT956TA FZT9556.pdf
FZT956TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+139.54 грн
10+67.10 грн
25+61.40 грн
50+56.94 грн
100+52.24 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
FZT958TA FZT958.pdf
FZT958TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Current gain: 100...300
Frequency: 85MHz
на замовлення 724 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+122.65 грн
10+46.38 грн
25+42.75 грн
50+40.27 грн
100+38.13 грн
500+33.92 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
FZT956QTA FZT956.pdf
FZT956QTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Pulsed collector current: 5A
Application: automotive industry
Current gain: 10...300
Frequency: 110MHz
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SBR60A300CT SBR60A300CT.pdf
SBR60A300CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 235A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.94V
Technology: SBR®
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+376.33 грн
5+217.87 грн
12+206.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SBR60A200CT SBR60A200CT.pdf
SBR60A200CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.96V
Max. forward impulse current: 250A
Kind of package: tube
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SMCJ150A-13-F SMCJ_ser.pdf
SMCJ150A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BAS16VV-7 BAS16VV.pdf
BAS16VV-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
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BAS16VVQ-7 BAS16VVQ.pdf
BAS16VVQ-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT563; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
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BZT52C11SQ-7-F ds30093.pdf
BZT52C11SQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C11T-7 BZT52CxxT_ser.pdf
BZT52C11T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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DMN3032LE-13 DMN3032LE.pdf
DMN3032LE-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SOT223
On-state resistance: 29mΩ
на замовлення 479 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+66.66 грн
13+32.19 грн
25+29.38 грн
68+13.95 грн
186+13.20 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
2N7002EQ-7-F 2N7002EQ.pdf
2N7002EQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Gate charge: 0.5nC
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DDZ27ASF-7 ds31987.pdf
DDZ27ASF-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
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B560CQ-13-F B520CQ-B560CQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 0.3nF
Max. forward voltage: 0.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 16ns
Application: automotive industry
Leakage current: 20mA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DML1010FDK-7 DML1010FDK.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; U-DFN2020-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 8mΩ
Kind of package: reel; tape
Supply voltage: 0.8...4V DC
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SMBJ170A-13-F SMBJ_ser.pdf
SMBJ170A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷217.5V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
ZTX601B ZTX600.pdf
ZTX601B
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Collector current: 1A
Manufacturer standard package: 4000pcs.
Collector-emitter voltage: 160V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 5000...100000
Frequency: 250MHz
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ZTX603 ZTX602.pdf
ZTX603
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Collector current: 1A
Manufacturer standard package: 4000pcs.
Collector-emitter voltage: 80V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 500...100000
Frequency: 250MHz
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ZTX601BSTZ ZTX600.pdf
ZTX601BSTZ
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 160V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 5000...100000
Frequency: 250MHz
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ZTX601STZ ZTX600.pdf
ZTX601STZ
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 160V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 160V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 1000...20000
Frequency: 250MHz
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ZTX603STZ ZTX602.pdf
ZTX603STZ
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 80V
Kind of transistor: Darlington
Pulsed collector current: 4A
Current gain: 500...100000
Frequency: 250MHz
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DDC114YU-7-F DDC_XXXX_U.pdf
DDC114YU-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Collector current: 70mA
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
28+16.00 грн
44+9.41 грн
53+7.89 грн
60+6.98 грн
100+6.24 грн
412+2.29 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
DDC114EU-7-F DDC_XXXX_U.pdf
DDC114EU-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 10kΩ
Collector current: 50mA
на замовлення 1571 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.11 грн
42+9.99 грн
100+6.40 грн
445+2.12 грн
1221+2.01 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.