Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74464) > Сторінка 1230 з 1242
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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TB0900H-13-F | DIODES INCORPORATED |
Category: Thyristors - othersDescription: Thyristor: TSS; Urmax: 75V; SMB; SMD; 100A; bidirectional; UBO: 98V Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 100A Max. off-state voltage: 75V Breakover voltage: 98V Semiconductor structure: bidirectional Type of thyristor: TSS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP1501-50K5G-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 5VDC; 3A; TO263-5; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 5V DC Output current: 3A Case: TO263-5 Mounting: SMD Frequency: 150kHz Topology: buck Operating temperature: -20...85°C Kind of package: reel; tape Efficiency: 80% |
на замовлення 448 шт: термін постачання 14-30 дні (днів) |
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74LVC06AT14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...150°C Kind of output: open drain Family: LVC Supply voltage: 1.65...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5243B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 13V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5243BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 13V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5243BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 13V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| GBJ2510_HF | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; GBJ; Ufmax: 1.05V Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.05V Case: GBJ |
на замовлення 190125 шт: термін постачання 14-30 дні (днів) |
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| AP3156FVG-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; charge pump; SDI; QFN16; 150mA; Ch: 6; 2.7÷5.5VDC Mounting: SMD Case: QFN16 Interface: SDI Output current: 0.15A Type of integrated circuit: driver Operating temperature: -40...85°C Integrated circuit features: soft-start function Kind of package: reel; tape Kind of integrated circuit: charge pump Number of channels: 6 Operating voltage: 2.7...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
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DMP2160UFDB-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: -13A Gate charge: 6.5nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DMC2041UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 1.4W; uDFN6 Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 1.4W Case: uDFN6 Mounting: SMD Gate charge: 15nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMC2025UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 700mW; uDFN6 Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 0.7W Case: uDFN6 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMP1046UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.8A Power dissipation: 2.2W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 61mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: -15A Gate charge: 17.9nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN2025UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.8A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 31mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 12.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN3032LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 25A Gate charge: 10.6nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMC1028UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 12V; 6A; 1.36W; U-DFN2020-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 6A Power dissipation: 1.36W Case: U-DFN2020-6 On-state resistance: 17mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 18.5nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMC1029UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 12/-12V Drain current: 3.7/-2.3A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.065/0.21Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMC1030UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 12/-12V Drain current: 5.1/-3.9A Power dissipation: 1.89W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 34/59mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 23.1/20.8nC Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN1029UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 3.7A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN2041UFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Power dissipation: 2.2W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 15nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMP1055UFDB-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -4A Power dissipation: 1.89W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.215Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: -25A Gate charge: 20.8nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMP2065UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Power dissipation: 0.74W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMP2110UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar Type of transistor: P-MOSFET x2 Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DXTN5820DFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 1.25W Case: U-DFN2020-3 Mounting: SMD Collector current: 6A Collector-emitter voltage: 20V Pulsed collector current: 8A Frequency: 80MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DXTN5840CFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 1.25W Case: U-DFN2020-3 Mounting: SMD Collector current: 5A Collector-emitter voltage: 40V Pulsed collector current: 7A Frequency: 150MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DXTP5820CFDB-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3 Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.69W Case: U-DFN2020-3 Mounting: SMD Kind of package: reel; tape Collector current: 6A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 20V Pulsed collector current: 8A Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DXTN58100CFDB-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 1.25W Case: U-DFN2020-3 Mounting: SMD Collector current: 4A Collector-emitter voltage: 100V Pulsed collector current: 6A Frequency: 150MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMN2053UFDB-7 | DIODES INCORPORATED |
Category: Transistors - UnclassifiedDescription: DMN2053UFDB-7 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| DMP2090UFDB-7 | DIODES INCORPORATED |
Category: Transistors - Unclassified Description: DMP2090UFDB-7 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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DMP2165UW-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -15A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 3.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 772 шт: термін постачання 14-30 дні (днів) |
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| DMN3016LFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 90A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 25.1nC |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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2N7002T-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.15W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 2N7002TQ-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.15W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ZXTP08400BFFTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.2A Power dissipation: 0.84W Case: SOT23F Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 70MHz Manufacturer standard package: 3000pcs. |
на замовлення 1400 шт: термін постачання 14-30 дні (днів) |
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ZTX696BSTZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 180V Collector current: 0.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 70MHz |
на замовлення 1956 шт: термін постачання 14-30 дні (днів) |
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BAS40BRW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series x2 Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FZT705TC | DIODES INCORPORATED |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FZT705TA | DIODES INCORPORATED |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington Pulsed collector current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FZT7053TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Case: SOT223 Frequency: 200MHz Collector current: 1.5A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 100V Power dissipation: 2W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FZT705QTA | DIODES INCORPORATED |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223 Mounting: SMD Application: automotive industry Type of transistor: PNP Current gain: 2000...30000 Kind of package: reel; tape Case: SOT223 Frequency: 160MHz Collector current: 2A Manufacturer standard package: 1000pcs. Collector-emitter voltage: 120V Power dissipation: 3W Polarisation: bipolar Kind of transistor: Darlington Pulsed collector current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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D5V0L2B3SO-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape Type of diode: TVS array Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Capacitance: 20pF Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ10CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 10µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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SMBJ100CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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B160AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Max. off-state voltage: 60V Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 30A Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 8mA Capacitance: 45pF Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| B160AF-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape Max. off-state voltage: 60V Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 30A Case: SMA flat Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.2mA Capacitance: 45pF Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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B160B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.7V Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Capacitance: 0.11nF Type of diode: Schottky rectifying |
на замовлення 5525 шт: термін постачання 14-30 дні (днів) |
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B160S1F-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.65V Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 8.2mA Case: SOD123F Capacitance: 45pF Type of diode: Schottky rectifying |
на замовлення 1900 шт: термін постачання 14-30 дні (днів) |
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74LVC32AS14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull |
на замовлення 2169 шт: термін постачання 14-30 дні (днів) |
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FMMT417TD | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Manufacturer standard package: 500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT415TD | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 60A Mounting: SMD Kind of package: reel; tape Frequency: 40MHz Manufacturer standard package: 500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| AP22615BWU-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOT26 On-state resistance: 40mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C6V2-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Case: SOT23 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 5827 шт: термін постачання 14-30 дні (днів) |
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BZX84C6V2TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT363 Semiconductor structure: triple independent Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C6V2Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C6V2S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT363 Semiconductor structure: double independent Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C6V2W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Case: SOT323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SDM2U40CSP-7B | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: X3-WLB1608-2 Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Capacitance: 85pF Max. forward voltage: 0.53V Leakage current: 0.15mA Max. forward impulse current: 28A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
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DFLS230LH-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Capacitance: 85pF Max. forward voltage: 0.45V Leakage current: 15mA Max. forward impulse current: 75A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SDT10A100CTFP | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V Mounting: THT Case: TO220FP Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.66V Max. off-state voltage: 0.1kV Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Leakage current: 50µA Type of diode: Schottky rectifying |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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SDT10A100CT | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V Mounting: THT Case: TO220AB Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.73V Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Type of diode: Schottky rectifying |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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| PAM8904EJPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC Type of integrated circuit: driver Operating temperature: -40...150°C Voltage supply range: 1.5...5.5V DC Kind of package: reel; tape Case: UQFN12 Kind of integrated circuit: piezo sounder Number of channels: 1 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| TB0900H-13-F |
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Виробник: DIODES INCORPORATED
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; 100A; bidirectional; UBO: 98V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. off-state voltage: 75V
Breakover voltage: 98V
Semiconductor structure: bidirectional
Type of thyristor: TSS
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 75V; SMB; SMD; 100A; bidirectional; UBO: 98V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. off-state voltage: 75V
Breakover voltage: 98V
Semiconductor structure: bidirectional
Type of thyristor: TSS
товару немає в наявності
В кошику
од. на суму грн.
| AP1501-50K5G-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 5VDC; 3A; TO263-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 5V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 80%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 5VDC; 3A; TO263-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 5V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 80%
на замовлення 448 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 167.09 грн |
| 10+ | 116.36 грн |
| 25+ | 105.64 грн |
| 100+ | 93.26 грн |
| 250+ | 84.18 грн |
| 74LVC06AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: open drain
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: open drain
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5243B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5243BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5243BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| GBJ2510_HF |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; GBJ; Ufmax: 1.05V
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.05V
Case: GBJ
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; GBJ; Ufmax: 1.05V
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.05V
Case: GBJ
на замовлення 190125 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 165+ | 43.37 грн |
| 825+ | 36.23 грн |
| AP3156FVG-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; charge pump; SDI; QFN16; 150mA; Ch: 6; 2.7÷5.5VDC
Mounting: SMD
Case: QFN16
Interface: SDI
Output current: 0.15A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: soft-start function
Kind of package: reel; tape
Kind of integrated circuit: charge pump
Number of channels: 6
Operating voltage: 2.7...5.5V DC
Category: LED drivers
Description: IC: driver; charge pump; SDI; QFN16; 150mA; Ch: 6; 2.7÷5.5VDC
Mounting: SMD
Case: QFN16
Interface: SDI
Output current: 0.15A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: soft-start function
Kind of package: reel; tape
Kind of integrated circuit: charge pump
Number of channels: 6
Operating voltage: 2.7...5.5V DC
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| DMP2160UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -13A
Gate charge: 6.5nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -13A
Gate charge: 6.5nC
товару немає в наявності
В кошику
од. на суму грн.
| DMC2041UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 1.4W; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: uDFN6
Mounting: SMD
Gate charge: 15nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 1.4W; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Case: uDFN6
Mounting: SMD
Gate charge: 15nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC2025UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 700mW; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 0.7W
Case: uDFN6
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 700mW; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 0.7W
Case: uDFN6
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP1046UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.8A
Power dissipation: 2.2W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -15A
Gate charge: 17.9nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.8A
Power dissipation: 2.2W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -15A
Gate charge: 17.9nC
товару немає в наявності
В кошику
од. на суму грн.
| DMN2025UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 31mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 12.3nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 35A; 1.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 31mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 12.3nC
товару немає в наявності
В кошику
од. на суму грн.
| DMN3032LFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
Gate charge: 10.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
Gate charge: 10.6nC
товару немає в наявності
В кошику
од. на суму грн.
| DMC1028UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 12V; 6A; 1.36W; U-DFN2020-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 6A
Power dissipation: 1.36W
Case: U-DFN2020-6
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18.5nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 12V; 6A; 1.36W; U-DFN2020-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 6A
Power dissipation: 1.36W
Case: U-DFN2020-6
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18.5nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC1029UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 12/-12V
Drain current: 3.7/-2.3A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.065/0.21Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 12/-12V
Drain current: 3.7/-2.3A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.065/0.21Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMC1030UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 12/-12V
Drain current: 5.1/-3.9A
Power dissipation: 1.89W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 34/59mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 23.1/20.8nC
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 12/-12V
Drain current: 5.1/-3.9A
Power dissipation: 1.89W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 34/59mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 23.1/20.8nC
Version: ESD
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| DMN1029UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 3.7A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 3.7A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN2041UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 2.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 15nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 2.2W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 15nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMP1055UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Power dissipation: 1.89W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.215Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -25A
Gate charge: 20.8nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Power dissipation: 1.89W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.215Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: -25A
Gate charge: 20.8nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMP2065UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Power dissipation: 0.74W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Power dissipation: 0.74W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP2110UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| DXTN5820DFDB-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1.25W
Case: U-DFN2020-3
Mounting: SMD
Collector current: 6A
Collector-emitter voltage: 20V
Pulsed collector current: 8A
Frequency: 80MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1.25W
Case: U-DFN2020-3
Mounting: SMD
Collector current: 6A
Collector-emitter voltage: 20V
Pulsed collector current: 8A
Frequency: 80MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DXTN5840CFDB-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1.25W
Case: U-DFN2020-3
Mounting: SMD
Collector current: 5A
Collector-emitter voltage: 40V
Pulsed collector current: 7A
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1.25W
Case: U-DFN2020-3
Mounting: SMD
Collector current: 5A
Collector-emitter voltage: 40V
Pulsed collector current: 7A
Frequency: 150MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DXTP5820CFDB-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.69W
Case: U-DFN2020-3
Mounting: SMD
Kind of package: reel; tape
Collector current: 6A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 20V
Pulsed collector current: 8A
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 6A; 690mW; U-DFN2020-3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.69W
Case: U-DFN2020-3
Mounting: SMD
Kind of package: reel; tape
Collector current: 6A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 20V
Pulsed collector current: 8A
Frequency: 140MHz
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| DXTN58100CFDB-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1.25W
Case: U-DFN2020-3
Mounting: SMD
Collector current: 4A
Collector-emitter voltage: 100V
Pulsed collector current: 6A
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 1.25W
Case: U-DFN2020-3
Mounting: SMD
Collector current: 4A
Collector-emitter voltage: 100V
Pulsed collector current: 6A
Frequency: 150MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMN2053UFDB-7 |
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на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.02 грн |
| DMP2090UFDB-7 |
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.11 грн |
| DMP2165UW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 772 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.00 грн |
| 24+ | 17.58 грн |
| 27+ | 15.43 грн |
| 50+ | 13.86 грн |
| 100+ | 12.54 грн |
| 194+ | 4.87 грн |
| 533+ | 4.62 грн |
| DMN3016LFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.22 грн |
| 12+ | 35.16 грн |
| 14+ | 29.96 грн |
| 30+ | 21.54 грн |
| 2N7002T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| 2N7002TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| ZXTP08400BFFTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.2A; 840mW; SOT23F
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.2A
Power dissipation: 0.84W
Case: SOT23F
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Manufacturer standard package: 3000pcs.
на замовлення 1400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.55 грн |
| 14+ | 30.04 грн |
| 100+ | 20.88 грн |
| 500+ | 15.76 грн |
| 1000+ | 15.52 грн |
| ZTX696BSTZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 70MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 180V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 70MHz
на замовлення 1956 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.99 грн |
| 12+ | 37.14 грн |
| 25+ | 33.51 грн |
| 100+ | 29.05 грн |
| 500+ | 26.74 грн |
| 1000+ | 25.42 грн |
| BAS40BRW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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| FZT705TC |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
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| FZT705TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
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| FZT7053TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 100V
Power dissipation: 2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1.5A; 2W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 100V
Power dissipation: 2W
Polarisation: bipolar
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| FZT705QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Application: automotive industry
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 2A; 3W; SOT223
Mounting: SMD
Application: automotive industry
Type of transistor: PNP
Current gain: 2000...30000
Kind of package: reel; tape
Case: SOT223
Frequency: 160MHz
Collector current: 2A
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 120V
Power dissipation: 3W
Polarisation: bipolar
Kind of transistor: Darlington
Pulsed collector current: 4A
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| D5V0L2B3SO-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Capacitance: 20pF
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Capacitance: 20pF
Number of channels: 2
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| SMBJ10CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.66 грн |
| 28+ | 15.19 грн |
| 31+ | 13.53 грн |
| 100+ | 9.08 грн |
| SMBJ100CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| B160AE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
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| B160AF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA flat
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 30A
Case: SMA flat
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2mA
Capacitance: 45pF
Type of diode: Schottky rectifying
Mounting: SMD
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| B160B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.11nF
Type of diode: Schottky rectifying
на замовлення 5525 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.55 грн |
| 21+ | 20.47 грн |
| 24+ | 17.33 грн |
| 25+ | 16.51 грн |
| 100+ | 15.68 грн |
| 150+ | 15.35 грн |
| 3000+ | 14.28 грн |
| B160S1F-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.65V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8.2mA
Case: SOD123F
Capacitance: 45pF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.65V
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 8.2mA
Case: SOD123F
Capacitance: 45pF
Type of diode: Schottky rectifying
на замовлення 1900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.33 грн |
| 41+ | 10.23 грн |
| 46+ | 9.08 грн |
| 100+ | 6.07 грн |
| 500+ | 4.62 грн |
| 1000+ | 4.24 грн |
| 74LVC32AS14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
на замовлення 2169 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.33 грн |
| 22+ | 19.31 грн |
| 27+ | 15.68 грн |
| 100+ | 8.34 грн |
| 141+ | 6.77 грн |
| 386+ | 6.35 грн |
| FMMT417TD |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
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| FMMT415TD |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 60A
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Manufacturer standard package: 500pcs.
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| AP22615BWU-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT26
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOT26
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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Мінімальне замовлення: 3000 шт
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| BZX84C6V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5827 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.78 грн |
| 59+ | 7.10 грн |
| 67+ | 6.19 грн |
| 95+ | 4.36 грн |
| 112+ | 3.71 грн |
| 500+ | 2.53 грн |
| 1000+ | 2.29 грн |
| 1500+ | 2.15 грн |
| 3000+ | 1.94 грн |
| BZX84C6V2TS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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| BZX84C6V2Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 6.2V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BZX84C6V2S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
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| BZX84C6V2W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.2V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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| SDM2U40CSP-7B |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: X3-WLB1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.53V
Leakage current: 0.15mA
Max. forward impulse current: 28A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X3-WLB1608-2; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: X3-WLB1608-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.53V
Leakage current: 0.15mA
Max. forward impulse current: 28A
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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| DFLS230LH-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.45V
Leakage current: 15mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 85pF
Max. forward voltage: 0.45V
Leakage current: 15mA
Max. forward impulse current: 75A
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| SDT10A100CTFP |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V
Mounting: THT
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.66V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Leakage current: 50µA
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.66V
Mounting: THT
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.66V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Leakage current: 50µA
Type of diode: Schottky rectifying
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.11 грн |
| 17+ | 25.58 грн |
| 46+ | 20.63 грн |
| 127+ | 19.81 грн |
| SDT10A100CT |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.73V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.73V
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.73V
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.44 грн |
| PAM8904EJPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Number of channels: 1
Mounting: SMD
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Operating temperature: -40...150°C
Voltage supply range: 1.5...5.5V DC
Kind of package: reel; tape
Case: UQFN12
Kind of integrated circuit: piezo sounder
Number of channels: 1
Mounting: SMD
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