Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74406) > Сторінка 1230 з 1241
| Фото | Назва | Виробник | Інформація |
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DMN10H220LQ-7 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2945 шт: термін постачання 21-30 дні (днів) |
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DMN10H220LVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W Mounting: SMD Case: TSOT26 Kind of package: reel; tape Pulsed drain current: 6.6A Drain-source voltage: 100V Drain current: 1.79A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1.07W Polarisation: unipolar Gate charge: 8.3nC Kind of channel: enhanced Gate-source voltage: ±16V |
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| AP61300QZ6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A Type of integrated circuit: PMIC Frequency: 2.2MHz Case: SOT563 Mounting: SMD Operating temperature: -40...85°C Output voltage: 0.6...5.5V DC Output current: 3A Application: automotive industry Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck |
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| DPO2036DBB-7 | DIODES INCORPORATED |
Category: Integrated circuits - others Description: IC: power switch; U-QFN2020-12; USB port ESD protection Type of integrated circuit: power switch Case: U-QFN2020-12 Mounting: SMD Application: USB port ESD protection Output current: 0.6A Supply voltage: 2.7...5.5V DC Number of channels: 4 Kind of output: N-Channel Protection: anti-overvoltage OVP |
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| 74LVC2G126HD4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN2010-8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVC Kind of input: with Schmitt trigger |
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| AP64501QSP-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; 85% Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Output current: 5A Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...85°C Output voltage: 0.8...39V DC Application: automotive industry Input voltage: 3.8...40V DC Frequency: 510...630kHz Topology: buck Efficiency: 85% |
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B290AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Capacitance: 70pF Case: SMA Kind of package: reel; tape Max. forward impulse current: 50A Max. forward voltage: 0.79V Leakage current: 0.4mA |
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| DT1042-04SOQ-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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AZ23C5V1-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
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SMAJ64A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 3.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ64CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 3.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| AL8116W6-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
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| SBR8U20SP5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 20V; 8A; PowerDI®5 Kind of package: reel; tape Max. off-state voltage: 20V Max. forward voltage: 0.51V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 180A Leakage current: 0.2mA Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Case: PowerDI®5 |
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MMSZ5263B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.37/0.5W; 56V; SMD; reel,tape; SOD123; single diode Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 56V Power dissipation: 0.37/0.5W Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% |
на замовлення 312 шт: термін постачання 21-30 дні (днів) |
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SMCJ6.5CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 133.9A; bidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 133.9A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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AP1539SDPG-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 4A; 92% Operating temperature: -20...85°C Kind of package: reel; tape Output voltage: 0.8...18V DC Output current: 4A Type of integrated circuit: PMIC Input voltage: 3.6...18V DC Efficiency: 92% Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: SOP-8L-DEP Frequency: 300kHz |
на замовлення 2498 шт: термін постачання 21-30 дні (днів) |
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GBU406 | DIODES INCORPORATED |
 Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
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DMP1055USW-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V |
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DMP3105LVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.75W Mounting: SMD Case: TSOT26 Polarisation: unipolar Drain current: -3.1A Drain-source voltage: -30V Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Power dissipation: 1.75W Type of transistor: P-MOSFET On-state resistance: 0.15Ω Kind of package: reel; tape |
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DMN61D8LVT-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 1.09W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 740pC Kind of package: reel; tape Kind of channel: enhanced |
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DMN61D8LVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 1.09W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 740pC Kind of package: reel; tape Kind of channel: enhanced |
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DMN61D8LVTQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 1.09W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 740pC Kind of package: reel; tape Kind of channel: enhanced |
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DMN61D8LVTQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 1.09W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 740pC Kind of package: reel; tape Kind of channel: enhanced |
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| DT1240-04LP-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| DT1240-04LPQ-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 60W; 6V; 5.5A; unidirectional; U-DFN2510-10; reel,tape Type of diode: TVS Peak pulse power dissipation: 60W Max. off-state voltage: 5.5V Breakdown voltage: 6V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: U-DFN2510-10 Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Number of channels: 4 |
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| DT1240-08LP3810-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| DT1240A-04LP-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| DT1240A-08LP3810-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| DT1240V3-04LP-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| APX803L20-27SR-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open drain; 0.9÷5.5VDC Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 0.9...5.5V DC Case: SOT23R Operating temperature: -40...85°C Mounting: SMD DC supply current: 1µA Maximum output current: 20mA Threshold on-voltage: 2.7V Kind of package: reel; tape Delay time: 220ms Integrated circuit features: ±1,5% accuracy |
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| FMMT617 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 3A Power dissipation: 0.625W Case: SOT23 Current gain: 80...450 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
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BCX6825QTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1W Case: SOT89 Pulsed collector current: 2A Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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BCX6825TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2074 шт: термін постачання 21-30 дні (днів) |
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| ZXMN6A08E6QTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
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| DXTN07060BFG-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar Mounting: SMD Type of transistor: NPN Polarisation: bipolar |
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| B290-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Capacitance: 75pF Case: SMB Kind of package: reel; tape Max. forward impulse current: 50A Max. forward voltage: 0.69V |
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| D18V0L1B2LP-7B | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
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| D18V0L1B2LPQ-7B | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
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FCX495QTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 150V; 1A; 1W; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 1W Case: SOT89 Pulsed collector current: 2A Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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FCX495TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 150V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 1W Case: SOT89 Pulsed collector current: 2A Mounting: SMD Kind of package: reel; tape |
на замовлення 608 шт: термін постачання 21-30 дні (днів) |
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| ZXMHC3A01T8TA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
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MMBZ5226B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 3.3V; SMD; reel,tape; SOT23; single diode; 25uA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 25µA |
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| DGD2184MS8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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| FMMT619 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 625mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.625W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
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SMCJ22A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4...27V Max. forward impulse current: 42.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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DLPT05-7-F | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: diode arrays; 6V; 17A; 300W; SOT23; Features: ESD protection Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Peak pulse power dissipation: 300W Capacitance: 1.9pF Max. forward impulse current: 17A Breakdown voltage: 6V Leakage current: 20µA Number of channels: 1 Type of diode: diode arrays |
на замовлення 4730 шт: термін постачання 21-30 дні (днів) |
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| D55V0M1B2WS-7 | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
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DMP3010LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 1.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1764 шт: термін постачання 21-30 дні (днів) |
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DMP3010LK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 1.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| DMP3010LPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -100A; 2.18W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11.5A Pulsed drain current: -100A Power dissipation: 2.18W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 126.2nC Kind of package: reel; tape Kind of channel: enhanced |
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AP7115-15WG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT25; SMD Operating temperature: -40...125°C Manufacturer series: AP7115 Output voltage: 1.5V Output current: 0.15A Voltage drop: 0.3V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...5.5V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT25 Tolerance: ±2% |
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AP7115-18WG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD Operating temperature: -40...85°C Manufacturer series: AP7115 Output voltage: 1.8V Output current: 0.15A Voltage drop: 0.3V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...5.5V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT25 Tolerance: ±2% |
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74LVC1G97DW-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; multiplexer Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOT363 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
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| 74LVC1G97FW4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; multiplexer Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
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| 74LVC1G97FZ4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; multiplexer Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
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74LVC1G97W6-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; multiplexer Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOT26 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
товар відсутній |
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ZTX550 | DIODES INCORPORATED |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 45V; 1A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
товар відсутній |
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| GBJ2510-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Leads: flat pin Case: GBJ Kind of package: tube Features of semiconductor devices: glass passivated |
товар відсутній |
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AZ23C4V7-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
на замовлення 5030 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7-13-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.37W; 4.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1180 шт: термін постачання 21-30 дні (днів) |
|
| DMN10H220LQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2945 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.36 грн |
| 55+ | 6.82 грн |
| 100+ | 6.05 грн |
| 160+ | 5.09 грн |
| 435+ | 4.82 грн |
| DMN10H220LVT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Pulsed drain current: 6.6A
Drain-source voltage: 100V
Drain current: 1.79A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.07W
Polarisation: unipolar
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Pulsed drain current: 6.6A
Drain-source voltage: 100V
Drain current: 1.79A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.07W
Polarisation: unipolar
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
товар відсутній
| AP61300QZ6-7 |
|
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Frequency: 2.2MHz
Case: SOT563
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 3A
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Frequency: 2.2MHz
Case: SOT563
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 3A
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
товар відсутній
| DPO2036DBB-7 |
|
Виробник: DIODES INCORPORATED
Category: Integrated circuits - others
Description: IC: power switch; U-QFN2020-12; USB port ESD protection
Type of integrated circuit: power switch
Case: U-QFN2020-12
Mounting: SMD
Application: USB port ESD protection
Output current: 0.6A
Supply voltage: 2.7...5.5V DC
Number of channels: 4
Kind of output: N-Channel
Protection: anti-overvoltage OVP
Category: Integrated circuits - others
Description: IC: power switch; U-QFN2020-12; USB port ESD protection
Type of integrated circuit: power switch
Case: U-QFN2020-12
Mounting: SMD
Application: USB port ESD protection
Output current: 0.6A
Supply voltage: 2.7...5.5V DC
Number of channels: 4
Kind of output: N-Channel
Protection: anti-overvoltage OVP
товар відсутній
| 74LVC2G126HD4-7 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
товар відсутній
| AP64501QSP-13 |
|
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; 85%
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output current: 5A
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 0.8...39V DC
Application: automotive industry
Input voltage: 3.8...40V DC
Frequency: 510...630kHz
Topology: buck
Efficiency: 85%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; 85%
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output current: 5A
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 0.8...39V DC
Application: automotive industry
Input voltage: 3.8...40V DC
Frequency: 510...630kHz
Topology: buck
Efficiency: 85%
товар відсутній
| B290AE-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 70pF
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.79V
Leakage current: 0.4mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 70pF
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.79V
Leakage current: 0.4mA
товар відсутній
| DT1042-04SOQ-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| AZ23C5V1-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.29 грн |
| 120+ | 2.92 грн |
| 250+ | 2.62 грн |
| 410+ | 2 грн |
| SMAJ64A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| SMAJ64CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 3.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 71.1÷78.6V; 3.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 3.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| AL8116W6-7 |
|
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
| SBR8U20SP5-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 20V; 8A; PowerDI®5
Kind of package: reel; tape
Max. off-state voltage: 20V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 180A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Case: PowerDI®5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 20V; 8A; PowerDI®5
Kind of package: reel; tape
Max. off-state voltage: 20V
Max. forward voltage: 0.51V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 180A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Case: PowerDI®5
товар відсутній
| MMSZ5263B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 56V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 56V
Power dissipation: 0.37/0.5W
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 56V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 56V
Power dissipation: 0.37/0.5W
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
на замовлення 312 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.18 грн |
| 180+ | 2 грн |
| SMCJ6.5CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 133.9A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 133.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 133.9A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 133.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| AP1539SDPG-13 |
|
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 4A; 92%
Operating temperature: -20...85°C
Kind of package: reel; tape
Output voltage: 0.8...18V DC
Output current: 4A
Type of integrated circuit: PMIC
Input voltage: 3.6...18V DC
Efficiency: 92%
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: SOP-8L-DEP
Frequency: 300kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 4A; 92%
Operating temperature: -20...85°C
Kind of package: reel; tape
Output voltage: 0.8...18V DC
Output current: 4A
Type of integrated circuit: PMIC
Input voltage: 3.6...18V DC
Efficiency: 92%
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: SOP-8L-DEP
Frequency: 300kHz
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.17 грн |
| 8+ | 44.23 грн |
| 24+ | 33.38 грн |
| 66+ | 31.99 грн |
| GBU406 | |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товар відсутній
| DMP1055USW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
товар відсутній
| DMP3105LVT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.75W
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Drain current: -3.1A
Drain-source voltage: -30V
Gate charge: 19.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Power dissipation: 1.75W
Type of transistor: P-MOSFET
On-state resistance: 0.15Ω
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.75W
Mounting: SMD
Case: TSOT26
Polarisation: unipolar
Drain current: -3.1A
Drain-source voltage: -30V
Gate charge: 19.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Power dissipation: 1.75W
Type of transistor: P-MOSFET
On-state resistance: 0.15Ω
Kind of package: reel; tape
товар відсутній
| DMN61D8LVT-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 1.09W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 740pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 1.09W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 740pC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN61D8LVT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 1.09W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 740pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 1.09W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 740pC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN61D8LVTQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 1.09W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 740pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 1.09W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 740pC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN61D8LVTQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 1.09W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 740pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 1.09W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 740pC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DT1240-04LP-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DT1240-04LPQ-7 |
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 60W; 6V; 5.5A; unidirectional; U-DFN2510-10; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 60W
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: U-DFN2510-10
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Number of channels: 4
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 60W; 6V; 5.5A; unidirectional; U-DFN2510-10; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 60W
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: U-DFN2510-10
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Number of channels: 4
товар відсутній
| DT1240-08LP3810-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DT1240A-04LP-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DT1240A-08LP3810-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| DT1240V3-04LP-7 |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
| APX803L20-27SR-7 |
|
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 0.9÷5.5VDC
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 2.7V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 0.9÷5.5VDC
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23R
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 2.7V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
товар відсутній
| FMMT617 |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
товар відсутній
| BCX6825QTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 2A
Current gain: 50...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 2A
Current gain: 50...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| BCX6825TA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 50...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 50...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2074 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.7 грн |
| 30+ | 11.75 грн |
| 90+ | 8.98 грн |
| 247+ | 8.49 грн |
| ZXMN6A08E6QTA |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| DXTN07060BFG-7 |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Mounting: SMD
Type of transistor: NPN
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Mounting: SMD
Type of transistor: NPN
Polarisation: bipolar
товар відсутній
| B290-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.69V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.69V
товар відсутній
| D18V0L1B2LP-7B |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
товар відсутній
| D18V0L1B2LPQ-7B |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
товар відсутній
| FCX495QTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 2A
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 2A
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| FCX495TA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 2A
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 2A
Mounting: SMD
Kind of package: reel; tape
на замовлення 608 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.47 грн |
| 25+ | 16.27 грн |
| 65+ | 12.38 грн |
| 179+ | 11.68 грн |
| ZXMHC3A01T8TA |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| MMBZ5226B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.3V; SMD; reel,tape; SOT23; single diode; 25uA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 25µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.3V; SMD; reel,tape; SOT23; single diode; 25uA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 25µA
товар відсутній
| DGD2184MS8-13 |
|
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
| FMMT619 |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| SMCJ22A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 24.4÷27V; 42.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 42.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| DLPT05-7-F |
|
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 17A; 300W; SOT23; Features: ESD protection
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 300W
Capacitance: 1.9pF
Max. forward impulse current: 17A
Breakdown voltage: 6V
Leakage current: 20µA
Number of channels: 1
Type of diode: diode arrays
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 17A; 300W; SOT23; Features: ESD protection
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 300W
Capacitance: 1.9pF
Max. forward impulse current: 17A
Breakdown voltage: 6V
Leakage current: 20µA
Number of channels: 1
Type of diode: diode arrays
на замовлення 4730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.66 грн |
| 60+ | 6.19 грн |
| 100+ | 5.49 грн |
| 165+ | 4.91 грн |
| 455+ | 4.65 грн |
| 3000+ | 4.59 грн |
| D55V0M1B2WS-7 |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
товар відсутній
| DMP3010LK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 1.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 1.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1764 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.42 грн |
| 12+ | 30.6 грн |
| 25+ | 27.05 грн |
| 35+ | 23.44 грн |
| 95+ | 22.11 грн |
| DMP3010LK3Q-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 1.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 1.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| DMP3010LPSQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -100A; 2.18W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.5A
Pulsed drain current: -100A
Power dissipation: 2.18W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 126.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -100A; 2.18W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.5A
Pulsed drain current: -100A
Power dissipation: 2.18W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 126.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| AP7115-15WG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT25; SMD
Operating temperature: -40...125°C
Manufacturer series: AP7115
Output voltage: 1.5V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT25; SMD
Operating temperature: -40...125°C
Manufacturer series: AP7115
Output voltage: 1.5V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Tolerance: ±2%
товар відсутній
| AP7115-18WG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Manufacturer series: AP7115
Output voltage: 1.8V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Manufacturer series: AP7115
Output voltage: 1.8V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Tolerance: ±2%
товар відсутній
| 74LVC1G97DW-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
товар відсутній
| 74LVC1G97FW4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
товар відсутній
| 74LVC1G97FZ4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
товар відсутній
| 74LVC1G97W6-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
товар відсутній
| ZTX550 |
|
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
товар відсутній
| GBJ2510-F |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
товар відсутній
| AZ23C4V7-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 5030 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.49 грн |
| 100+ | 3.48 грн |
| 250+ | 3.13 грн |
| 340+ | 2.39 грн |
| 930+ | 2.26 грн |
| BZT52C4V7-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.18 грн |
| 260+ | 1.35 грн |
| 500+ | 1.19 грн |
| 760+ | 1.07 грн |