Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74732) > Сторінка 1230 з 1246
| Фото | Назва | Виробник | Інформація |
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DMG1013TQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW Drain current: -0.33A Gate charge: 580pC Power dissipation: 0.27W On-state resistance: 1.3Ω Kind of package: 7 inch reel; tape Gate-source voltage: ±6V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMG1013UWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Drain current: -540mA Gate charge: 622.4pC Power dissipation: 0.31W On-state resistance: 1.5Ω Kind of package: 13 inch reel; tape Gate-source voltage: ±6V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DMN2600UFB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.9A Pulsed drain current: 3A Power dissipation: 0.54W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 0.85nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN3730UFB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.6nC On-state resistance: 0.73Ω Power dissipation: 0.69W Drain current: 730mA Pulsed drain current: 3A Gate-source voltage: ±8V Drain-source voltage: 30V Case: X1-DFN1006-3 Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN3730UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.6nC On-state resistance: 0.73Ω Power dissipation: 0.69W Drain current: 730mA Pulsed drain current: 3A Gate-source voltage: ±8V Drain-source voltage: 30V Case: X2-DFN1006-3 Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMN3731UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Pulsed drain current: 3A Power dissipation: 970mW Case: X2-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.73Ω Mounting: SMD Gate charge: 5.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMN3731U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.58W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.73Ω Mounting: SMD Gate charge: 5.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMN3731U-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.58W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.73Ω Mounting: SMD Gate charge: 5.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BAT54SDWQ-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 36000 шт: термін постачання 21-30 дні (днів) |
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| P4SMAJ6.0ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 0.4mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMP6050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET x2 Case: SO8 Drain-source voltage: -60V Pulsed drain current: -32A Drain current: -3.9A On-state resistance: 55mΩ Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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DMPH6050SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: TO252 Drain-source voltage: -60V Pulsed drain current: -40A Drain current: -6A Gate charge: 25nC On-state resistance: 70mΩ Power dissipation: 3.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 1855 шт: термін постачання 21-30 дні (днів) |
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BZT52C3V3Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZT52C3V3TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMAZ16-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 16V; 63mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 16V Zener current: 63mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2897 шт: термін постачання 21-30 дні (днів) |
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| DFLZ16-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 16V; SMD; reel,tape; PowerDI®123; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 16V Kind of package: reel; tape Case: PowerDI®123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2870 шт: термін постачання 21-30 дні (днів) |
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BCW68HTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.31W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 1000pcs. |
на замовлення 5037 шт: термін постачання 21-30 дні (днів) |
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SMCJ16A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 57.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DDTA123YCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ZHCS500TA | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 6.75A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZHCS500QTA | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Capacitance: 20pF Max. forward voltage: 1.05V Max. forward impulse current: 6.75A Kind of package: reel; tape Power dissipation: 0.33W Application: automotive industry Leakage current: 40µA Reverse recovery time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZHCS506TA | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 60V Load current: 0.5A Semiconductor structure: single diode Capacitance: 20pF Max. forward voltage: 0.63V Max. forward impulse current: 2.5A Kind of package: reel; tape Power dissipation: 0.33W |
на замовлення 2254 шт: термін постачання 21-30 дні (днів) |
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ZHCS506QTA | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 60V Load current: 0.5A Semiconductor structure: single diode Capacitance: 20pF Max. forward voltage: 1.35V Max. forward impulse current: 5.5A Kind of package: reel; tape Power dissipation: 0.33W Application: automotive industry Leakage current: 40µA Reverse recovery time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV23A-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Semiconductor structure: common anode; double Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Reverse recovery time: 50ns Max. load current: 0.625A Features of semiconductor devices: small signal Capacitance: 5pF |
на замовлення 2763 шт: термін постачання 21-30 дні (днів) |
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BAV23CQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Max. load current: 0.625A Max. forward impulse current: 9A Capacitance: 5pF |
на замовлення 1400 шт: термін постачання 21-30 дні (днів) |
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| BAV23C-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. load current: 0.625A Max. forward impulse current: 9A Capacitance: 5pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAV23AQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: common anode; double Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Max. load current: 0.625A Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAV23-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT143; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: double independent Features of semiconductor devices: small signal Case: SOT143 Max. forward voltage: 1.25V Kind of package: reel; tape Capacitance: 5pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAV23AQ-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching Type of diode: switching |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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| ADTA114EUAQ-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Quantity in set/package: 10000pcs. Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ADTA114EUAQ-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMT3009UDT-7 | DIODES INCORPORATED |
Category: Transistors - UnclassifiedDescription: DMT3009UDT-7 |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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BSR33TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 30...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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| AMBTA92Q-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 300mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ZTX553 | DIODES INCORPORATED |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1W Case: TO92 Current gain: 40...200 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 150MHz |
на замовлення 3987 шт: термін постачання 21-30 дні (днів) |
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| ZTX553STZ | DIODES INCORPORATED |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1W Case: TO92 Current gain: 40...200 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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AP2120N-5.0TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP2120 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP2120N-1.3TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.3V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 1.3V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP2120 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
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В кошику од. на суму грн. | ||||||||||||||||||
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AP2120N-1.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 1.5V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP2120 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP2120N-2.8TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 2.8V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP2120 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMP3097L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23 Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -3.1A Gate charge: 13.4nC On-state resistance: 99mΩ Power dissipation: 1.52W Gate-source voltage: ±20V Polarisation: unipolar Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74AUP1G34SE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AUP Manufacturer series: AUP Operating temperature: -40...125°C Type of integrated circuit: digital Case: SOT353 Mounting: SMD Number of channels: 1 Quiescent current: 0.9µA Supply voltage: 0.8...3.6V DC Kind of output: push-pull Technology: CMOS Kind of integrated circuit: buffer; non-inverting Kind of package: reel; tape |
на замовлення 2317 шт: термін постачання 21-30 дні (днів) |
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| AP22908W6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 1.5A; Ch: 1; P-Channel; SMD; SOT26 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SOT26 Active logical level: high Kind of output: P-Channel Kind of package: reel; tape Output current: 1.5A Supply voltage: 1.08...3.6V DC Number of channels: 1 |
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В кошику од. на суму грн. | |||||||||||||||||||
| AP22916CCA4-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 2A; Ch: 1; P-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: U-WLB0808-4 Active logical level: high Kind of output: P-Channel Kind of package: reel; tape On-state resistance: 60mΩ Output current: 2A Supply voltage: 1.3...3.5V DC Number of channels: 1 |
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В кошику од. на суму грн. | |||||||||||||||||||
|
BAT54-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.2W Max. forward impulse current: 0.6A |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| LM4040C30FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM4040C30QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM4040C33FTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM4040C33QFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BAS70DW-04-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double x2 Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF Max. forward impulse current: 0.1A |
на замовлення 2120 шт: термін постачання 21-30 дні (днів) |
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SMAJ20A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1725 шт: термін постачання 21-30 дні (днів) |
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| P4SMAJ20ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74AHC1G04SE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 2÷5.5VDC; AHC Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHC Kind of input: with Schmitt trigger Kind of output: push-pull Number of inputs: 1 Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
74AHC1G04W5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 2÷5.5VDC; AHC Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHC Kind of input: with Schmitt trigger Kind of output: push-pull Number of inputs: 1 Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
B230A-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 200pF Max. forward voltage: 0.5V Load current: 2A Max. forward impulse current: 50A |
на замовлення 6764 шт: термін постачання 21-30 дні (днів) |
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B230-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 200pF Max. forward voltage: 0.5V Load current: 2A Max. forward impulse current: 50A |
на замовлення 1898 шт: термін постачання 21-30 дні (днів) |
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S1KB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Case: SMB Capacitance: 10pF Reverse recovery time: 1.8µs Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 0.8kV |
на замовлення 1705 шт: термін постачання 21-30 дні (днів) |
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| S3KB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Case: SMB Capacitance: 40pF Load current: 3A Max. forward voltage: 1.15V Max. forward impulse current: 100A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS3KB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 3A; 500ns; SMB; Ufmax: 1.3V; reel,tape Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Case: SMB Reverse recovery time: 0.5µs Load current: 3A Max. forward voltage: 1.3V Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
RS1KB-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Case: SMB Capacitance: 15pF Reverse recovery time: 0.5µs Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG1013TQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Drain current: -0.33A
Gate charge: 580pC
Power dissipation: 0.27W
On-state resistance: 1.3Ω
Kind of package: 7 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Drain current: -0.33A
Gate charge: 580pC
Power dissipation: 0.27W
On-state resistance: 1.3Ω
Kind of package: 7 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
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В кошику
од. на суму грн.
| DMG1013UWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Drain current: -540mA
Gate charge: 622.4pC
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Kind of package: 13 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Drain current: -540mA
Gate charge: 622.4pC
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Kind of package: 13 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
товару немає в наявності
В кошику
од. на суму грн.
| DMN2600UFB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 0.54W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 0.85nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 0.54W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 0.85nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMN3730UFB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.6nC
On-state resistance: 0.73Ω
Power dissipation: 0.69W
Drain current: 730mA
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X1-DFN1006-3
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.6nC
On-state resistance: 0.73Ω
Power dissipation: 0.69W
Drain current: 730mA
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X1-DFN1006-3
Kind of package: 7 inch reel; tape
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В кошику
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| DMN3730UFB4-7B |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.6nC
On-state resistance: 0.73Ω
Power dissipation: 0.69W
Drain current: 730mA
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.6nC
On-state resistance: 0.73Ω
Power dissipation: 0.69W
Drain current: 730mA
Pulsed drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 30V
Case: X2-DFN1006-3
Kind of package: 7 inch reel; tape
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| DMN3731UFB4-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 970mW
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 970mW
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN3731U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN3731U-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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В кошику
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| BAT54SDWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 36000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.42 грн |
| P4SMAJ6.0ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
од. на суму грн.
| DMP6050SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.20 грн |
| 12+ | 35.57 грн |
| 25+ | 31.01 грн |
| 100+ | 25.34 грн |
| 250+ | 23.02 грн |
| DMPH6050SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 1855 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.95 грн |
| 11+ | 37.49 грн |
| 50+ | 27.50 грн |
| 100+ | 24.30 грн |
| 250+ | 20.78 грн |
| 500+ | 19.26 грн |
| BZT52C3V3Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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| BZT52C3V3TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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| SMAZ16-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 63mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Zener current: 63mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 63mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Zener current: 63mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2897 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.61 грн |
| 53+ | 7.67 грн |
| 55+ | 7.27 грн |
| 61+ | 6.55 грн |
| 100+ | 6.15 грн |
| 500+ | 5.99 грн |
| DFLZ16-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.35 грн |
| 38+ | 10.63 грн |
| 100+ | 7.75 грн |
| 500+ | 6.79 грн |
| 1000+ | 6.55 грн |
| BCW68HTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
на замовлення 5037 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.08 грн |
| 29+ | 14.07 грн |
| 33+ | 12.39 грн |
| 100+ | 7.63 грн |
| 500+ | 5.62 грн |
| 1000+ | 5.02 грн |
| 3000+ | 4.54 грн |
| SMCJ16A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| DDTA123YCA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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| ZHCS500TA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 6.75A
Kind of package: reel; tape
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| ZHCS500QTA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 1.05V
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Power dissipation: 0.33W
Application: automotive industry
Leakage current: 40µA
Reverse recovery time: 10ns
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 1.05V
Max. forward impulse current: 6.75A
Kind of package: reel; tape
Power dissipation: 0.33W
Application: automotive industry
Leakage current: 40µA
Reverse recovery time: 10ns
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| ZHCS506TA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 0.63V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; reel,tape; 330mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 0.63V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Power dissipation: 0.33W
на замовлення 2254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.01 грн |
| 21+ | 19.82 грн |
| 100+ | 13.03 грн |
| 150+ | 12.47 грн |
| ZHCS506QTA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 1.35V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Application: automotive industry
Leakage current: 40µA
Reverse recovery time: 10ns
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 60V; 0.5A; 10ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 20pF
Max. forward voltage: 1.35V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Power dissipation: 0.33W
Application: automotive industry
Leakage current: 40µA
Reverse recovery time: 10ns
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| BAV23A-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: common anode; double
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. load current: 0.625A
Features of semiconductor devices: small signal
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: common anode; double
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. load current: 0.625A
Features of semiconductor devices: small signal
Capacitance: 5pF
на замовлення 2763 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.33 грн |
| 56+ | 7.19 грн |
| 69+ | 5.82 грн |
| 100+ | 5.24 грн |
| 500+ | 4.08 грн |
| 1000+ | 3.64 грн |
| BAV23CQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 2.89 грн |
| 500+ | 2.56 грн |
| BAV23C-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
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| BAV23AQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Max. load current: 0.625A
Application: automotive industry
Features of semiconductor devices: small signal
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| BAV23-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT143; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT143; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 5pF
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| BAV23AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.91 грн |
| ADTA114EUAQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Current gain: 30
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Quantity in set/package: 10000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Current gain: 30
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| ADTA114EUAQ-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Current gain: 30
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Current gain: 30
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| DMT3009UDT-7 |
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на замовлення 1500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 29.27 грн |
| BSR33TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 23+ | 18.14 грн |
| 100+ | 12.63 грн |
| 500+ | 9.99 грн |
| AMBTA92Q-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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| ZTX553 |
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Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
на замовлення 3987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.04 грн |
| 15+ | 27.26 грн |
| 25+ | 23.82 грн |
| 100+ | 19.50 грн |
| ZTX553STZ |
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Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 40...200
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
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| AP2120N-5.0TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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| AP2120N-1.3TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 1.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 1.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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| AP2120N-1.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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| AP2120N-2.8TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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| DMP3097L-7 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
Gate charge: 13.4nC
On-state resistance: 99mΩ
Power dissipation: 1.52W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
Gate charge: 13.4nC
On-state resistance: 99mΩ
Power dissipation: 1.52W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: 7 inch reel; tape
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| 74AUP1G34SE-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AUP
Manufacturer series: AUP
Operating temperature: -40...125°C
Type of integrated circuit: digital
Case: SOT353
Mounting: SMD
Number of channels: 1
Quiescent current: 0.9µA
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AUP
Manufacturer series: AUP
Operating temperature: -40...125°C
Type of integrated circuit: digital
Case: SOT353
Mounting: SMD
Number of channels: 1
Quiescent current: 0.9µA
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Kind of package: reel; tape
на замовлення 2317 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 66+ | 6.54 грн |
| 69+ | 5.83 грн |
| 100+ | 5.59 грн |
| 250+ | 5.28 грн |
| 500+ | 5.04 грн |
| AP22908W6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 1.5A; Ch: 1; P-Channel; SMD; SOT26
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOT26
Active logical level: high
Kind of output: P-Channel
Kind of package: reel; tape
Output current: 1.5A
Supply voltage: 1.08...3.6V DC
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 1.5A; Ch: 1; P-Channel; SMD; SOT26
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOT26
Active logical level: high
Kind of output: P-Channel
Kind of package: reel; tape
Output current: 1.5A
Supply voltage: 1.08...3.6V DC
Number of channels: 1
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| AP22916CCA4-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 1; P-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: U-WLB0808-4
Active logical level: high
Kind of output: P-Channel
Kind of package: reel; tape
On-state resistance: 60mΩ
Output current: 2A
Supply voltage: 1.3...3.5V DC
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 1; P-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: U-WLB0808-4
Active logical level: high
Kind of output: P-Channel
Kind of package: reel; tape
On-state resistance: 60mΩ
Output current: 2A
Supply voltage: 1.3...3.5V DC
Number of channels: 1
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| BAT54-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 13.59 грн |
| LM4040C30FTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| LM4040C30QFTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| LM4040C33FTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| LM4040C33QFTA |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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| BAS70DW-04-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Max. forward impulse current: 0.1A
на замовлення 2120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.35 грн |
| 34+ | 11.99 грн |
| 39+ | 10.31 грн |
| 48+ | 8.47 грн |
| 100+ | 6.47 грн |
| 500+ | 5.12 грн |
| 1000+ | 4.72 грн |
| SMAJ20A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 46+ | 8.79 грн |
| 53+ | 7.59 грн |
| 100+ | 4.53 грн |
| P4SMAJ20ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| 74AHC1G04SE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 1
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 1
Kind of integrated circuit: inverter
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| 74AHC1G04W5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 1
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 1
Kind of integrated circuit: inverter
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| B230A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 6764 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.66 грн |
| 30+ | 13.51 грн |
| 50+ | 10.95 грн |
| 100+ | 9.91 грн |
| 250+ | 8.55 грн |
| 500+ | 7.51 грн |
| 1000+ | 6.55 грн |
| 2000+ | 5.67 грн |
| 5000+ | 4.40 грн |
| B230-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 1898 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 43+ | 9.43 грн |
| 45+ | 8.95 грн |
| 100+ | 7.83 грн |
| 500+ | 7.03 грн |
| 1000+ | 6.71 грн |
| S1KB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Capacitance: 10pF
Reverse recovery time: 1.8µs
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Capacitance: 10pF
Reverse recovery time: 1.8µs
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
на замовлення 1705 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.91 грн |
| 66+ | 6.07 грн |
| 70+ | 5.75 грн |
| 100+ | 4.96 грн |
| 500+ | 4.41 грн |
| 1000+ | 4.18 грн |
| S3KB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Capacitance: 40pF
Load current: 3A
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Max. off-state voltage: 0.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Capacitance: 40pF
Load current: 3A
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Max. off-state voltage: 0.8kV
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| RS3KB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 3A; 500ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Reverse recovery time: 0.5µs
Load current: 3A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 3A; 500ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Reverse recovery time: 0.5µs
Load current: 3A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
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| RS1KB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Capacitance: 15pF
Reverse recovery time: 0.5µs
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Capacitance: 15pF
Reverse recovery time: 0.5µs
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
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