Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74766) > Сторінка 502 з 1247
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MMBTA28-13-F | Diodes Incorporated |
Description: TRANS NPN DARL 80V 0.5A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 310 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDTA113TUA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 200MW SOT323 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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DDTA113TCA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 200MW SOT23-3 |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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ADTA113ZUAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ADTA113ZUAQ-13 | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ADTA113ZCAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SB860-T | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 8A DO201AD Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SB860-B | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 8A DO201AD Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMP32M6SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 100A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V |
на замовлення 67500 шт: термін постачання 21-31 дні (днів) |
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DMP32M6SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V |
на замовлення 67753 шт: термін постачання 21-31 дні (днів) |
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DMP32D9UFO-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN0604Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0604-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V |
на замовлення 360000 шт: термін постачання 21-31 дні (днів) |
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PI2MEQX2505ZHEX | Diodes Incorporated |
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5Packaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Delay Time: 1ns Number of Channels: 5 Mounting Type: Surface Mount Output: Differential Type: Buffer, ReDriver Input: Differential Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.62V ~ 1.98V Applications: I2C Data Rate (Max): 2.5Gbps Supplier Device Package: 28-TQFN (3.5x5.5) Signal Conditioning: Input Equalization, Output Pre-Emphasis Part Status: Active |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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PI2MEQX2505ZHEX | Diodes Incorporated |
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5Packaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Delay Time: 1ns Number of Channels: 5 Mounting Type: Surface Mount Output: Differential Type: Buffer, ReDriver Input: Differential Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.62V ~ 1.98V Applications: I2C Data Rate (Max): 2.5Gbps Supplier Device Package: 28-TQFN (3.5x5.5) Signal Conditioning: Input Equalization, Output Pre-Emphasis Part Status: Active |
на замовлення 11580 шт: термін постачання 21-31 дні (днів) |
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DMP31D7LT-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT523 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP31D7LFBQ-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X1-DFN1006Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 810mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 170000 шт: термін постачання 21-31 дні (днів) |
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DMP31D7L-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP31D7LT-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT523 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP31D7LFB-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X1-DFN1006Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 810mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP31D7L-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
на замовлення 525000 шт: термін постачання 21-31 дні (днів) |
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DMP31D7LDWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT363 T&RPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP31D7LDWQ-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 0.55A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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FES1GE | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A F1APackaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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FES1GE | Diodes Incorporated |
Description: DIODE STANDARD 400V 1A F1APackaging: Cut Tape (CT) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 91739 шт: термін постачання 21-31 дні (днів) |
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ES2BA-13-F | Diodes Incorporated |
Description: DIODE STANDARD 100V 2A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 101451 шт: термін постачання 21-31 дні (днів) |
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AP9101CAK6-BJTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BCTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-COTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BFTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BYTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BGTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CLTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BTTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CATRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BNTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BLTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CBTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BKTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CITRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CNTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BITRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BOTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BXTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CMTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AP9101CAK6-BPTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CJTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BQTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CFTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BETRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BWTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-CHTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP9101CAK6-BUTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NX5021D0322.289795 | Diodes Incorporated |
Description: CLOCK SAW OSCILLATOR SEAM5032Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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S1MSWFMQ-7 | Diodes Incorporated |
Description: DIODE STANDARD 1000V 1A SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Standard Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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S1MSWFMQ-7 | Diodes Incorporated |
Description: DIODE STANDARD 1000V 1A SOD123FPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Standard Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 107888 шт: термін постачання 21-31 дні (днів) |
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AP43776ZDZ20-13 | Diodes Incorporated |
Description: ACDC DECODER W-QFN4040-20 T&R 3KPackaging: Tape & Reel (TR) Package / Case: 20-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Applications: USB-C (BC1.2/PD3.1/PPS/QC5) Protocol Decoder Current - Supply: 3mA Supplier Device Package: W-QFN4040-20 (Type A1) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP43776ZDZ20-13 | Diodes Incorporated |
Description: ACDC DECODER W-QFN4040-20 T&R 3KPackaging: Cut Tape (CT) Package / Case: 20-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Applications: USB-C (BC1.2/PD3.1/PPS/QC5) Protocol Decoder Current - Supply: 3mA Supplier Device Package: W-QFN4040-20 (Type A1) Part Status: Active |
на замовлення 2425 шт: термін постачання 21-31 дні (днів) |
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GBJ25L06 | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE GBJ TUB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMAJ18ADFQ-13 | Diodes Incorporated |
Description: TVS DIODE 18VWM 29.2VC DFLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 20.5A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBR2U10LP-13 | Diodes Incorporated |
Description: DIODE SBR 10V 2A 3DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBR2U10LP-13 | Diodes Incorporated |
Description: DIODE SBR 10V 2A 3DFN |
товару немає в наявності |
В кошику од. на суму грн. |
| MMBTA28-13-F |
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Виробник: Diodes Incorporated
Description: TRANS NPN DARL 80V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 310 mW
Description: TRANS NPN DARL 80V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 310 mW
товару немає в наявності
В кошику
од. на суму грн.
| DDTA113TUA-7-F |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT323
Description: TRANS PREBIAS PNP 200MW SOT323
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.50 грн |
| DDTA113TCA-7-F |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Description: TRANS PREBIAS PNP 200MW SOT23-3
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.11 грн |
| ADTA113ZUAQ-7 |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTA113ZUAQ-13 |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ADTA113ZCAQ-7 |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SB860-T |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 8A DO201AD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY 60V 8A DO201AD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| SB860-B |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 8A DO201AD
Packaging: Bulk
Part Status: Obsolete
Description: DIODE SCHOTTKY 60V 8A DO201AD
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| DMP32M6SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V
Description: MOSFET P-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V
на замовлення 67500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 60.43 грн |
| DMP32M6SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V
Description: MOSFET P-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V
на замовлення 67753 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.75 грн |
| 10+ | 118.13 грн |
| 100+ | 81.10 грн |
| 500+ | 63.53 грн |
| DMP32D9UFO-7B |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
на замовлення 360000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.34 грн |
| 20000+ | 2.09 грн |
| 30000+ | 2.08 грн |
| 50000+ | 1.88 грн |
| PI2MEQX2505ZHEX |
![]() |
Виробник: Diodes Incorporated
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Delay Time: 1ns
Number of Channels: 5
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V
Applications: I2C
Data Rate (Max): 2.5Gbps
Supplier Device Package: 28-TQFN (3.5x5.5)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Part Status: Active
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Delay Time: 1ns
Number of Channels: 5
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V
Applications: I2C
Data Rate (Max): 2.5Gbps
Supplier Device Package: 28-TQFN (3.5x5.5)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Part Status: Active
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 59.28 грн |
| 7000+ | 55.93 грн |
| 10500+ | 55.34 грн |
| PI2MEQX2505ZHEX |
![]() |
Виробник: Diodes Incorporated
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Delay Time: 1ns
Number of Channels: 5
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V
Applications: I2C
Data Rate (Max): 2.5Gbps
Supplier Device Package: 28-TQFN (3.5x5.5)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Part Status: Active
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Delay Time: 1ns
Number of Channels: 5
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V
Applications: I2C
Data Rate (Max): 2.5Gbps
Supplier Device Package: 28-TQFN (3.5x5.5)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Part Status: Active
на замовлення 11580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.52 грн |
| 10+ | 84.48 грн |
| 25+ | 76.83 грн |
| 100+ | 64.13 грн |
| 250+ | 60.34 грн |
| 500+ | 59.47 грн |
| DMP31D7LT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP31D7LFBQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 170000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.96 грн |
| 20000+ | 2.59 грн |
| 30000+ | 2.45 грн |
| 50000+ | 2.16 грн |
| 70000+ | 2.08 грн |
| 100000+ | 2.00 грн |
| DMP31D7L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP31D7LT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP31D7LFB-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP31D7L-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
на замовлення 525000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.99 грн |
| 6000+ | 3.50 грн |
| 9000+ | 3.31 грн |
| 15000+ | 2.92 грн |
| 21000+ | 2.81 грн |
| 30000+ | 2.69 грн |
| 75000+ | 2.43 грн |
| DMP31D7LDWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-363
товару немає в наявності
В кошику
од. на суму грн.
| DMP31D7LDWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 30V 0.55A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.55A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.37 грн |
| 30000+ | 4.13 грн |
| 50000+ | 3.42 грн |
| FES1GE |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 400V 1A F1A
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A F1A
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.61 грн |
| 20000+ | 2.50 грн |
| FES1GE |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 400V 1A F1A
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A F1A
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 91739 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.11 грн |
| 35+ | 9.35 грн |
| 100+ | 7.78 грн |
| 500+ | 5.39 грн |
| 1000+ | 4.64 грн |
| 2000+ | 4.24 грн |
| 5000+ | 3.61 грн |
| ES2BA-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 100V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 101451 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.24 грн |
| 20+ | 16.31 грн |
| 100+ | 15.99 грн |
| 500+ | 12.20 грн |
| 1000+ | 10.62 грн |
| 2000+ | 9.87 грн |
| AP9101CAK6-BJTRG1 |
![]() |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BCTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-COTRG1 |
![]() |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BFTRG1 |
![]() |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BYTRG1 |
![]() |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BGTRG1 |
![]() |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CLTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BTTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CATRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BNTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BLTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CBTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BKTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CITRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CNTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BITRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BOTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BXTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CMTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.95 грн |
| AP9101CAK6-BPTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CJTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BQTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CFTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BETRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BWTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-CHTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-BUTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
товару немає в наявності
В кошику
од. на суму грн.
| S1MSWFMQ-7 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.43 грн |
| 6000+ | 6.86 грн |
| 9000+ | 6.66 грн |
| S1MSWFMQ-7 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 107888 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.71 грн |
| 16+ | 20.22 грн |
| 100+ | 16.03 грн |
| 500+ | 11.32 грн |
| 1000+ | 10.12 грн |
| AP43776ZDZ20-13 |
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Виробник: Diodes Incorporated
Description: ACDC DECODER W-QFN4040-20 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Applications: USB-C (BC1.2/PD3.1/PPS/QC5) Protocol Decoder
Current - Supply: 3mA
Supplier Device Package: W-QFN4040-20 (Type A1)
Part Status: Active
Description: ACDC DECODER W-QFN4040-20 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Applications: USB-C (BC1.2/PD3.1/PPS/QC5) Protocol Decoder
Current - Supply: 3mA
Supplier Device Package: W-QFN4040-20 (Type A1)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| AP43776ZDZ20-13 |
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Виробник: Diodes Incorporated
Description: ACDC DECODER W-QFN4040-20 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Applications: USB-C (BC1.2/PD3.1/PPS/QC5) Protocol Decoder
Current - Supply: 3mA
Supplier Device Package: W-QFN4040-20 (Type A1)
Part Status: Active
Description: ACDC DECODER W-QFN4040-20 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Applications: USB-C (BC1.2/PD3.1/PPS/QC5) Protocol Decoder
Current - Supply: 3mA
Supplier Device Package: W-QFN4040-20 (Type A1)
Part Status: Active
на замовлення 2425 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.93 грн |
| 10+ | 100.55 грн |
| 25+ | 91.63 грн |
| 100+ | 76.74 грн |
| 250+ | 72.33 грн |
| 500+ | 71.86 грн |
| GBJ25L06 |
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Виробник: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBJ TUB
Description: MEDIUM/HIGH POWER BRIDGE GBJ TUB
товару немає в наявності
В кошику
од. на суму грн.
| P6SMAJ18ADFQ-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBR2U10LP-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 10V 2A 3DFN
Description: DIODE SBR 10V 2A 3DFN
товару немає в наявності
В кошику
од. на суму грн.
| SBR2U10LP-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 10V 2A 3DFN
Description: DIODE SBR 10V 2A 3DFN
товару немає в наявності
В кошику
од. на суму грн.















