Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72708) > Сторінка 581 з 1212
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74LVC1G08Z-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP SOT553Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 652000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G08Z-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 655382 шт: термін постачання 21-31 дні (днів) |
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DUP1105SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 44VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 60pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DUP1105SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 44VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 60pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
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DMTH10H032LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMTH10H032LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN2451UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMN2451UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
на замовлення 34572 шт: термін постачання 21-31 дні (днів) |
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DMTH10H032LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH10H032LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V |
на замовлення 4771 шт: термін постачання 21-31 дні (днів) |
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DML3008LFDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V V-DFN2020-Features: Load Discharge, Power Good, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 8-PowerVFDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 7.5mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN2020-8 (Type N) Fault Protection: Over Temperature Grade: Automotive Qualification: AEC-Q100 |
на замовлення 186000 шт: термін постачання 21-31 дні (днів) |
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DML3008LFDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V V-DFN2020-Features: Load Discharge, Power Good, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 8-PowerVFDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 7.5mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN2020-8 (Type N) Fault Protection: Over Temperature Grade: Automotive Qualification: AEC-Q100 |
на замовлення 186177 шт: термін постачання 21-31 дні (днів) |
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DMN2451UFB4Q-7R | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
на замовлення 228000 шт: термін постачання 21-31 дні (днів) |
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DMN2451UFB4-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V |
на замовлення 560000 шт: термін постачання 21-31 дні (днів) |
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| DML1012LDS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8Features: Load Discharge Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Grade: Automotive Qualification: AEC-Q100 |
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В кошику од. на суму грн. | |||||||||||||||||
| DML1012LDS-7A | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8Features: Load Discharge Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DML10M8LDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8Features: Load Discharge Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 342000 шт: термін постачання 21-31 дні (днів) |
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DMTH10H032SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V PowerDI50Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMTH10H032SPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V PowerDI50Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 2391 шт: термін постачання 21-31 дні (днів) |
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| DMT8008LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V-100V SO-8Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| KBP4T10 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 4A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP3792S-13 | Diodes Incorporated |
Description: ACDC GEN 4 CONT SO-8 T&R 4K Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ58CAQ-13-F | Diodes Incorporated |
Description: TVS DIODE 58VWM 93.6VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ58CAQ-13-F | Diodes Incorporated |
Description: TVS DIODE 58VWM 93.6VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 751 шт: термін постачання 21-31 дні (днів) |
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| SBR10100CTL-13-2084 | Diodes Incorporated |
Description: DIODE ARR SBR 100V 5A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DESD2FLEX2SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 41VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 25pF @ 5MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 25.4V Voltage - Clamping (Max) @ Ipp: 41V Power - Peak Pulse: 230W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DESD2FLEX2SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 41VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 25pF @ 5MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 25.4V Voltage - Clamping (Max) @ Ipp: 41V Power - Peak Pulse: 230W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16702 шт: термін постачання 21-31 дні (днів) |
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| DMP3036SFVQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V PowerDI333Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMP3036SFVQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V PowerDI333Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BZX84B33Q-7-F | Diodes Incorporated |
Description: TIGHT TOLERANCE ZENER DIODE SOT2Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Qualification: AEC-Q101 |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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SBR20A60CTFP | Diodes Incorporated |
Description: DIODE ARRAY SBR 60V 10A ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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D30V0S1UG3LP20-7 | Diodes Incorporated |
Description: TVS DIODE 30VWM 31V UDFN20203Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 500pF @ 1MHz Current - Peak Pulse (10/1000µs): 180A (8/20µs) Voltage - Reverse Standoff (Typ): 30V (Max) Supplier Device Package: U-DFN2020-3 (Type C) Unidirectional Channels: 1 Voltage - Breakdown (Min): 30.5V Voltage - Clamping (Max) @ Ipp: 31V (Typ) Power - Peak Pulse: 5580W (5.58kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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D30V0S1UG3LP20-7 | Diodes Incorporated |
Description: TVS DIODE 30VWM 31V UDFN20203Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 500pF @ 1MHz Current - Peak Pulse (10/1000µs): 180A (8/20µs) Voltage - Reverse Standoff (Typ): 30V (Max) Supplier Device Package: U-DFN2020-3 (Type C) Unidirectional Channels: 1 Voltage - Breakdown (Min): 30.5V Voltage - Clamping (Max) @ Ipp: 31V (Typ) Power - Peak Pulse: 5580W (5.58kW) Power Line Protection: No |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
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FMMT411FDBWQ-7 | Diodes Incorporated |
Description: TRANS NPN 15V 5A W-DFN2020-3Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 110MHz Supplier Device Package: W-DFN2020-3 (Type A) Grade: Automotive Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 820 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FMMT411FDBWQ-7 | Diodes Incorporated |
Description: TRANS NPN 15V 5A W-DFN2020-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 110MHz Supplier Device Package: W-DFN2020-3 (Type A) Grade: Automotive Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 820 mW Qualification: AEC-Q101 |
на замовлення 2583 шт: термін постачання 21-31 дні (днів) |
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FMMT411TD | Diodes Incorporated |
Description: TRANS NPN 15V 0.9A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 40MHz Supplier Device Package: SOT-23 (Type DN) Current - Collector (Ic) (Max): 900 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 730 mW |
на замовлення 16672 шт: термін постачання 21-31 дні (днів) |
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FMMT411QTA | Diodes Incorporated |
Description: TRANS NPN 15V 0.9A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 40MHz Supplier Device Package: SOT-23 (Type DN) Grade: Automotive Current - Collector (Ic) (Max): 900 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 800 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FH4800014 | Diodes Incorporated |
Description: CRYSTAL 48.0000MHZ 10PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 10pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -30°C ~ 85°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 48 MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FH4800014 | Diodes Incorporated |
Description: CRYSTAL 48.0000MHZ 10PF SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Load Capacitance: 10pF Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -30°C ~ 85°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.028" (0.70mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 48 MHz |
на замовлення 5019 шт: термін постачання 21-31 дні (днів) |
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BZT585B16T-7 | Diodes Incorporated |
Description: DIODE ZENER 16V 350MW SOD523Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V |
на замовлення 673375 шт: термін постачання 21-31 дні (днів) |
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| AP7351D-25FS4-7B | Diodes Incorporated |
Description: LDO CMOS LOWCURR X2-DFN1010-4 (TPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 (Type B) Voltage - Output (Min/Fixed): 2.5V Control Features: Current Limit, Enable PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.48V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP5724FDCG-7 | Diodes Incorporated |
Description: IC LED DRVR RGLTR PWM 750MA 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: U-DFN2020-6 (Type C) Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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AP5724FDCG-7 | Diodes Incorporated |
Description: IC LED DRVR RGLTR PWM 750MA 6DFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: U-DFN2020-6 (Type C) Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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DDZ30D-7 | Diodes Incorporated |
Description: DIODE ZENER 30V 310MW SOD123Tolerance: ±2.5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-123 Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 23 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DDZ30D-7 | Diodes Incorporated |
Description: DIODE ZENER 30V 310MW SOD123Tolerance: ±2.5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-123 Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 23 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RH02-T | Diodes Incorporated |
Description: RECTIFIER BRIDGE SMT 0.5A 200VPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MiniDIP Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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ZXGD3114N7TC | Diodes Incorporated |
Description: OR'ING CONTROLLER SO-7 T&R 2.5KPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Supply: 4V ~ 20V Supplier Device Package: 7-SO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZXGD3114N7TC | Diodes Incorporated |
Description: OR'ING CONTROLLER SO-7 T&R 2.5KPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Supply: 4V ~ 20V Supplier Device Package: 7-SO |
на замовлення 1679 шт: термін постачання 21-31 дні (днів) |
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APX803L20-49SA-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 143ms Minimum Voltage - Threshold: 4.9V Supplier Device Package: SOT-23-3 DigiKey Programmable: Not Verified |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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| PI6C49CB01JWEX | Diodes Incorporated |
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Translator Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/No Supplier Device Package: 8-SOIC Frequency - Max: 360 MHz |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| PI6C49CB01JWEX | Diodes Incorporated |
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Translator Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/No Supplier Device Package: 8-SOIC Frequency - Max: 360 MHz |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PI6C49X0201WIEX | Diodes Incorporated |
Description: IC TRANSLTR UNIDIRECTIONAL 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-SOIC Channel Type: Unidirectional Output Signal: LVCMOS, LVTTL Translator Type: Mixed Signal Channels per Circuit: 1 Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL Number of Circuits: 1 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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PI6C49X0201WIEX | Diodes Incorporated |
Description: IC TRANSLTR UNIDIRECTIONAL 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-SOIC Channel Type: Unidirectional Output Signal: LVCMOS, LVTTL Translator Type: Mixed Signal Channels per Circuit: 1 Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL Number of Circuits: 1 |
на замовлення 17641 шт: термін постачання 21-31 дні (днів) |
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DMC6040SSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 5.1A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMC6040SSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 5.1A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2264 шт: термін постачання 21-31 дні (днів) |
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B370CE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 70V 3A SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 105pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 70 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B390CE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 90V 3A SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 105pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMC2991UDJ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.5A SOT963Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 |
на замовлення 510000 шт: термін постачання 21-31 дні (днів) |
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DMC2991UDJ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.5A SOT963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 |
на замовлення 519695 шт: термін постачання 21-31 дні (днів) |
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DMC2710UDW-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.75A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| 74LVC1G08Z-7 |
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Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 652000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 7.37 грн |
| 8000+ | 6.42 грн |
| 12000+ | 6.08 грн |
| 20000+ | 5.34 грн |
| 28000+ | 5.13 грн |
| 40000+ | 4.92 грн |
| 100000+ | 4.45 грн |
| 74LVC1G08Z-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 655382 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.59 грн |
| 15+ | 22.13 грн |
| 25+ | 18.20 грн |
| 100+ | 12.80 грн |
| 250+ | 10.70 грн |
| 500+ | 9.41 грн |
| 1000+ | 8.19 грн |
| DUP1105SOQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.48 грн |
| DUP1105SOQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.16 грн |
| 23+ | 14.87 грн |
| 100+ | 7.20 грн |
| 500+ | 6.69 грн |
| 1000+ | 6.56 грн |
| DMTH10H032LPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H032LPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMN2451UFB4Q-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.73 грн |
| 20000+ | 2.38 грн |
| 30000+ | 2.26 грн |
| DMN2451UFB4Q-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
на замовлення 34572 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.15 грн |
| 34+ | 9.91 грн |
| 100+ | 6.13 грн |
| 500+ | 4.21 грн |
| 1000+ | 3.71 грн |
| 2000+ | 3.29 грн |
| 5000+ | 2.78 грн |
| DMTH10H032LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 17.51 грн |
| DMTH10H032LPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
на замовлення 4771 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.04 грн |
| 10+ | 43.36 грн |
| 100+ | 28.23 грн |
| 500+ | 20.40 грн |
| 1000+ | 18.44 грн |
| DML3008LFDS-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
на замовлення 186000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 51.92 грн |
| 6000+ | 48.91 грн |
| 9000+ | 48.36 грн |
| DML3008LFDS-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
на замовлення 186177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.49 грн |
| 10+ | 74.33 грн |
| 25+ | 67.43 грн |
| 100+ | 56.13 грн |
| 250+ | 52.73 грн |
| 500+ | 50.69 грн |
| 1000+ | 48.20 грн |
| DMN2451UFB4Q-7R |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
на замовлення 228000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.23 грн |
| 6000+ | 2.75 грн |
| 9000+ | 2.32 грн |
| 15000+ | 2.15 грн |
| 21000+ | 2.14 грн |
| 30000+ | 2.03 грн |
| 75000+ | 1.85 грн |
| 150000+ | 1.83 грн |
| DMN2451UFB4-7B |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
на замовлення 560000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.61 грн |
| 20000+ | 2.82 грн |
| 30000+ | 2.73 грн |
| 50000+ | 2.46 грн |
| 70000+ | 2.37 грн |
| DML1012LDS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
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| DML1012LDS-7A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
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| DML10M8LDS-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 342000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.13 грн |
| 6000+ | 15.11 грн |
| 9000+ | 14.90 грн |
| 15000+ | 13.77 грн |
| 21000+ | 13.64 грн |
| 30000+ | 13.52 грн |
| DMTH10H032SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 18.59 грн |
| DMTH10H032SPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.48 грн |
| 10+ | 48.64 грн |
| 100+ | 31.94 грн |
| 500+ | 23.21 грн |
| 1000+ | 21.04 грн |
| DMT8008LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
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| KBP4T10 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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| SMBJ58CAQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| SMBJ58CAQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 751 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.59 грн |
| 15+ | 23.29 грн |
| 100+ | 15.83 грн |
| 500+ | 11.65 грн |
| SBR10100CTL-13-2084 |
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 100V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE ARR SBR 100V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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| DESD2FLEX2SOQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.15 грн |
| 6000+ | 7.69 грн |
| 9000+ | 7.30 грн |
| 15000+ | 6.59 грн |
| DESD2FLEX2SOQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16702 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.73 грн |
| 17+ | 20.32 грн |
| 100+ | 13.77 грн |
| 500+ | 10.11 грн |
| 1000+ | 8.90 грн |
| DMP3036SFVQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
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| DMP3036SFVQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 16.36 грн |
| BZX84B33Q-7-F |
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Виробник: Diodes Incorporated
Description: TIGHT TOLERANCE ZENER DIODE SOT2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Qualification: AEC-Q101
Description: TIGHT TOLERANCE ZENER DIODE SOT2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Qualification: AEC-Q101
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.88 грн |
| 6000+ | 2.57 грн |
| 9000+ | 2.13 грн |
| 30000+ | 1.96 грн |
| SBR20A60CTFP |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.35 грн |
| 50+ | 49.17 грн |
| D30V0S1UG3LP20-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
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| D30V0S1UG3LP20-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
на замовлення 218 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.02 грн |
| 17+ | 19.57 грн |
| 100+ | 13.23 грн |
| FMMT411FDBWQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
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од. на суму грн.
| FMMT411FDBWQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
на замовлення 2583 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 312.18 грн |
| 10+ | 198.21 грн |
| 100+ | 139.94 грн |
| 500+ | 120.12 грн |
| FMMT411TD |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
на замовлення 16672 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 279.59 грн |
| 10+ | 176.08 грн |
| 100+ | 123.37 грн |
| FMMT411QTA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| FH4800014 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 38.04 грн |
| FH4800014 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
на замовлення 5019 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.61 грн |
| 10+ | 58.06 грн |
| 50+ | 54.31 грн |
| 100+ | 45.05 грн |
| 500+ | 42.68 грн |
| 1000+ | 35.56 грн |
| BZT585B16T-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 16V 350MW SOD523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Description: DIODE ZENER 16V 350MW SOD523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
на замовлення 673375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.29 грн |
| 47+ | 7.10 грн |
| 100+ | 3.56 грн |
| 500+ | 3.23 грн |
| 1000+ | 3.12 грн |
| AP7351D-25FS4-7B |
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Виробник: Diodes Incorporated
Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current
Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current
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од. на суму грн.
| AP5724FDCG-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.16 грн |
| AP5724FDCG-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.48 грн |
| 10+ | 51.04 грн |
| 25+ | 42.42 грн |
| 100+ | 30.57 грн |
| 250+ | 26.04 грн |
| 500+ | 23.25 грн |
| 1000+ | 20.58 грн |
| DDZ30D-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 30V 310MW SOD123
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
Description: DIODE ZENER 30V 310MW SOD123
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.42 грн |
| 6000+ | 3.06 грн |
| 9000+ | 2.54 грн |
| DDZ30D-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 30V 310MW SOD123
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
Description: DIODE ZENER 30V 310MW SOD123
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.58 грн |
| 25+ | 13.46 грн |
| 100+ | 6.57 грн |
| 500+ | 5.14 грн |
| 1000+ | 3.57 грн |
| RH02-T |
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Виробник: Diodes Incorporated
Description: RECTIFIER BRIDGE SMT 0.5A 200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MiniDIP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: RECTIFIER BRIDGE SMT 0.5A 200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MiniDIP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.14 грн |
| 6000+ | 17.47 грн |
| 9000+ | 16.17 грн |
| 30000+ | 15.03 грн |
| ZXGD3114N7TC |
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Виробник: Diodes Incorporated
Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
товару немає в наявності
В кошику
од. на суму грн.
| ZXGD3114N7TC |
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Виробник: Diodes Incorporated
Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
на замовлення 1679 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 180.96 грн |
| 10+ | 129.50 грн |
| 25+ | 118.27 грн |
| 100+ | 99.42 грн |
| 250+ | 93.91 грн |
| 500+ | 90.59 грн |
| 1000+ | 86.41 грн |
| APX803L20-49SA-7 |
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Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 4.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 4.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.89 грн |
| 6000+ | 8.04 грн |
| 15000+ | 7.52 грн |
| 30000+ | 6.47 грн |
| PI6C49CB01JWEX |
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Виробник: Diodes Incorporated
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 42.42 грн |
| 5000+ | 38.81 грн |
| PI6C49CB01JWEX |
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Виробник: Diodes Incorporated
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.49 грн |
| 10+ | 86.06 грн |
| 25+ | 81.70 грн |
| 100+ | 62.99 грн |
| 250+ | 58.88 грн |
| 500+ | 52.03 грн |
| 1000+ | 40.40 грн |
| PI6C49X0201WIEX |
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Виробник: Diodes Incorporated
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 98.52 грн |
| PI6C49X0201WIEX |
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Виробник: Diodes Incorporated
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
на замовлення 17641 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 309.61 грн |
| 10+ | 191.19 грн |
| 25+ | 163.29 грн |
| 100+ | 123.67 грн |
| 250+ | 109.13 грн |
| 500+ | 100.19 грн |
| 1000+ | 91.18 грн |
| DMC6040SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMC6040SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.90 грн |
| 10+ | 49.64 грн |
| 100+ | 34.27 грн |
| 500+ | 26.91 грн |
| 1000+ | 24.49 грн |
| B370CE-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Description: DIODE SCHOTTKY 70V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
товару немає в наявності
В кошику
од. на суму грн.
| B390CE-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
товару немає в наявності
В кошику
од. на суму грн.
| DMC2991UDJ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
на замовлення 510000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.80 грн |
| 20000+ | 3.33 грн |
| 30000+ | 3.16 грн |
| 50000+ | 2.79 грн |
| 70000+ | 2.69 грн |
| 100000+ | 2.59 грн |
| 250000+ | 2.44 грн |
| DMC2991UDJ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Description: MOSFET N/P-CH 20V 0.5A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
на замовлення 519695 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 22.30 грн |
| 26+ | 12.97 грн |
| 100+ | 8.09 грн |
| 500+ | 5.59 грн |
| 1000+ | 4.94 грн |
| 2000+ | 4.40 грн |
| 5000+ | 3.74 грн |
| DMC2710UDW-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET N/P-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.82 грн |
| 6000+ | 4.28 грн |
















