Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124853) > Сторінка 84 з 2081
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SFH 551/1V-1 | Infineon Technologies |
Description: MOD PHOTO DETECT RCVR 700NM TTLCurrent - Supply: 4 mA Part Status: Obsolete Power - Minimum Receivable: -22dBm Data Rate: 50Mbps Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SFH 757 | Infineon Technologies |
Description: TRANSMITTER DIODE FIBER OPTIC |
товару немає в наявності |
Мінімальне замовлення: 70 шт В кошику од. на суму грн. | |
| SIDC01D120H6 | Infineon Technologies |
Description: DIODE GP 1.2KV 600MA WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 600mA Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC01D60C6 | Infineon Technologies | Description: DIODE GEN PURP WAFER |
товару немає в наявності |
Мінімальне замовлення: 2346 шт В кошику од. на суму грн. | |
| SIDC02D60C6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 6A WAFER |
товару немає в наявності |
Мінімальне замовлення: 1752 шт В кошику од. на суму грн. | |
| SIDC02D60F6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 3A WAFER |
товару немає в наявності |
Мінімальне замовлення: 3634 шт В кошику од. на суму грн. | |
| SIDC03D120F6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 2A WAFER |
товару немає в наявності |
Мінімальне замовлення: 1251 шт В кошику од. на суму грн. | |
| SIDC03D120H6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 3A WAFER |
товару немає в наявності |
Мінімальне замовлення: 1251 шт В кошику од. на суму грн. | |
| SIDC03D60C6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 10A WAFER |
товару немає в наявності |
Мінімальне замовлення: 1223 шт В кошику од. на суму грн. | |
| SIDC03D60F6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 6A WAFER |
товару немає в наявності |
Мінімальне замовлення: 2414 шт В кошику од. на суму грн. | |
| SIDC04D60F6X1SA3 | Infineon Technologies |
Description: DIODE STD 600V 9A SAWN ON FOILCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 9A Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC05D60C6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 15A WAFER |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | |
| SIDC06D120E6X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 5A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC06D120F6X1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 5A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC06D120H6X1SA4 | Infineon Technologies |
Description: DIODE GP 1.2KV 7.5A WAFERMounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 7.5A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC06D60AC6X1SA1 | Infineon Technologies |
Description: DIODE GP 600V 20A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 20A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC06D60C6 | Infineon Technologies |
Description: DIODE GP 600V 20A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 20A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC06D60E6X1SA3 | Infineon Technologies |
Description: DIODE STD 600V 10A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC06D60F6X1SA3 | Infineon Technologies |
Description: DIODE STD 600V 15A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC07D60AF6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 22.5A WAFER |
товару немає в наявності |
Мінімальне замовлення: 927 шт В кошику од. на суму грн. | |
| SIDC07D60E6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 15A WAFER |
товару немає в наявності |
Мінімальне замовлення: 577 шт В кошику од. на суму грн. | |
| SIDC07D60F6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 22.5A WAFER |
товару немає в наявності |
Мінімальне замовлення: 561 шт В кошику од. на суму грн. | |
| SIDC08D120F6X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 7A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 7A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC08D120H6X1SA1 | Infineon Technologies |
Description: DIODE GP 1.2KV 10A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 10A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC08D60C6 | Infineon Technologies |
Description: DIODE STD 600V 30A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC08D60C6Y | Infineon Technologies |
Description: DIODE GP 600V 30A WAFERMounting Type: Surface Mount Package / Case: Die Packaging: Bulk Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 30A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC09D60E6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 20A WAFER |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |
| SIDC09D60E6Y | Infineon Technologies |
Description: DIODE GEN PURP 600V 20A WAFER |
товару немає в наявності |
Мінімальне замовлення: 702 шт В кошику од. на суму грн. | |
| SIDC09D60F6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A WAFER |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |
| SIDC10D120H6X1SA5 | Infineon Technologies |
Description: DIODE GP 1.2KV 15A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 15A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC110D170H | Infineon Technologies |
Description: DIODE GEN PURP 1.7KV 200A WAFER |
товару немає в наявності |
Мінімальне замовлення: 31 шт В кошику од. на суму грн. | |
| SIDC11D60SIC3 | Infineon Technologies |
Description: DIODE SIL CARB 600V 4A WAFERCurrent - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 150pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 3459 шт В кошику од. на суму грн. | |
| SIDC14D120E6X1SA4 | Infineon Technologies |
Description: DIODE STD 1200V 15A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC14D120F6X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 15A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 15A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC14D120H6X1SA1 | Infineon Technologies |
Description: DIODE STD 1200V 25A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC14D60C6 | Infineon Technologies |
Description: DIODE GP 600V 50A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 50A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC14D60C6Y | Infineon Technologies |
Description: DIODE GP 600V 50A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC14D60E6X1SA1 | Infineon Technologies |
Description: DIODE STD 600V 30A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC14D60E6YX1SA1 | Infineon Technologies |
Description: DIODE GP 600V 30A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC14D60F6X1SA2 | Infineon Technologies |
Description: DIODE STD 600V 45A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
|
SIDC161D170HX1SA2 | Infineon Technologies |
Description: DIODE STANDARD 1.7KV 300A SAWNPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A Current - Reverse Leakage @ Vr: 27 µA @ 1700 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 300 Voltage Coupled to Current - Reverse Leakage @ Vr: 1700 |
товару немає в наявності |
В кошику од. на суму грн. |
| SIDC16D60SIC3 | Infineon Technologies |
Description: DIODE SIL CARB 600V 5A WAFERCurrent - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 170pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC19D60SIC3 | Infineon Technologies |
Description: DIODE SIL CARB 600V 6A WAFERCurrent - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 300pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC20D60C6 | Infineon Technologies |
Description: DIODE STD 600V 75A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC23D120E6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 25A WAFER |
товару немає в наявності |
Мінімальне замовлення: 178 шт В кошику од. на суму грн. | |
| SIDC23D120F6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 25A WAFER |
товару немає в наявності |
Мінімальне замовлення: 178 шт В кошику од. на суму грн. | |
| SIDC23D120H6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 35A WAFER |
товару немає в наявності |
Мінімальне замовлення: 178 шт В кошику од. на суму грн. | |
| SIDC23D60E6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 50A WAFER |
товару немає в наявності |
Мінімальне замовлення: 178 шт В кошику од. на суму грн. | |
| SIDC23D60E6Y | Infineon Technologies |
Description: DIODE GEN PURP 600V 50A WAFER |
товару немає в наявності |
Мінімальне замовлення: 283 шт В кошику од. на суму грн. | |
| SIDC24D30SIC3 | Infineon Technologies |
Description: DIODE SIL CARB 300V 10A WAFERCurrent - Reverse Leakage @ Vr: 200 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 300 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 600pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC26D60C6 | Infineon Technologies |
Description: DIODE STD 600V 100A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC30D120E6X1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 35A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 35A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC30D120F6X1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 35A WAFERMounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 35 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 35A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC30D120H6X1SA4 | Infineon Technologies |
Description: DIODE GP 1.2KV 50A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 50A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIDC30D60E6X1SA1 | Infineon Technologies |
Description: DIODE STD 600V 75A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |
|
SIDC32D170HX1SA3 | Infineon Technologies |
Description: DIODE STD 1700V 50A SAWN ON FOILTechnology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Reverse Leakage @ Vr: 27 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Voltage - DC Reverse (Vr) (Max): 1700 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 50A |
товару немає в наявності |
В кошику од. на суму грн. |
| SIDC38D60C6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 150A WAFER |
товару немає в наявності |
Мінімальне замовлення: 106 шт В кошику од. на суму грн. | |
| SIDC42D120E6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 50A WAFER |
товару немає в наявності |
Мінімальне замовлення: 96 шт В кошику од. на суму грн. | |
| SIDC42D120F6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 50A WAFER |
товару немає в наявності |
Мінімальне замовлення: 96 шт В кошику од. на суму грн. | |
| SIDC42D120H6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 75A WAFER |
товару немає в наявності |
Мінімальне замовлення: 96 шт В кошику од. на суму грн. |
| SFH 551/1V-1 |
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Виробник: Infineon Technologies
Description: MOD PHOTO DETECT RCVR 700NM TTL
Current - Supply: 4 mA
Part Status: Obsolete
Power - Minimum Receivable: -22dBm
Data Rate: 50Mbps
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Packaging: Bulk
Description: MOD PHOTO DETECT RCVR 700NM TTL
Current - Supply: 4 mA
Part Status: Obsolete
Power - Minimum Receivable: -22dBm
Data Rate: 50Mbps
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SFH 757 |
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Виробник: Infineon Technologies
Description: TRANSMITTER DIODE FIBER OPTIC
Description: TRANSMITTER DIODE FIBER OPTIC
товару немає в наявності
Мінімальне замовлення: 70 шт
В кошику
од. на суму грн.
| SIDC01D120H6 |
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Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 600MA WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 600mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 600MA WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 600mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC01D60C6 |
Виробник: Infineon Technologies
Description: DIODE GEN PURP WAFER
Description: DIODE GEN PURP WAFER
товару немає в наявності
Мінімальне замовлення: 2346 шт
В кошику
од. на суму грн.
| SIDC02D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 6A WAFER
Description: DIODE GEN PURP 600V 6A WAFER
товару немає в наявності
Мінімальне замовлення: 1752 шт
В кошику
од. на суму грн.
| SIDC02D60F6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 3A WAFER
Description: DIODE GEN PURP 600V 3A WAFER
товару немає в наявності
Мінімальне замовлення: 3634 шт
В кошику
од. на суму грн.
| SIDC03D120F6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 2A WAFER
Description: DIODE GEN PURP 1.2KV 2A WAFER
товару немає в наявності
Мінімальне замовлення: 1251 шт
В кошику
од. на суму грн.
| SIDC03D120H6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 3A WAFER
Description: DIODE GEN PURP 1.2KV 3A WAFER
товару немає в наявності
Мінімальне замовлення: 1251 шт
В кошику
од. на суму грн.
| SIDC03D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 10A WAFER
Description: DIODE GEN PURP 600V 10A WAFER
товару немає в наявності
Мінімальне замовлення: 1223 шт
В кошику
од. на суму грн.
| SIDC03D60F6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 6A WAFER
Description: DIODE GEN PURP 600V 6A WAFER
товару немає в наявності
Мінімальне замовлення: 2414 шт
В кошику
од. на суму грн.
| SIDC04D60F6X1SA3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 9A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE STD 600V 9A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC05D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 15A WAFER
Description: DIODE GEN PURP 600V 15A WAFER
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| SIDC06D120E6X1SA3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC06D120F6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC06D120H6X1SA4 |
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Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 7.5A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 7.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Description: DIODE GP 1.2KV 7.5A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 7.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
товару немає в наявності
В кошику
од. на суму грн.
| SIDC06D60AC6X1SA1 |
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Виробник: Infineon Technologies
Description: DIODE GP 600V 20A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 20A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC06D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 20A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 20A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC06D60E6X1SA3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 10A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STD 600V 10A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC06D60F6X1SA3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STD 600V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC07D60AF6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 22.5A WAFER
Description: DIODE GEN PURP 600V 22.5A WAFER
товару немає в наявності
Мінімальне замовлення: 927 шт
В кошику
од. на суму грн.
| SIDC07D60E6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 15A WAFER
Description: DIODE GEN PURP 600V 15A WAFER
товару немає в наявності
Мінімальне замовлення: 577 шт
В кошику
од. на суму грн.
| SIDC07D60F6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 22.5A WAFER
Description: DIODE GEN PURP 600V 22.5A WAFER
товару немає в наявності
Мінімальне замовлення: 561 шт
В кошику
од. на суму грн.
| SIDC08D120F6X1SA3 |
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Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 7A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 7A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 7A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 7A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC08D120H6X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 10A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 10A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC08D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 30A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STD 600V 30A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC08D60C6Y |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Description: DIODE GP 600V 30A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| SIDC09D60E6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 20A WAFER
Description: DIODE GEN PURP 600V 20A WAFER
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| SIDC09D60E6Y |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 20A WAFER
Description: DIODE GEN PURP 600V 20A WAFER
товару немає в наявності
Мінімальне замовлення: 702 шт
В кошику
од. на суму грн.
| SIDC09D60F6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A WAFER
Description: DIODE GEN PURP 600V 30A WAFER
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| SIDC10D120H6X1SA5 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC110D170H |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 200A WAFER
Description: DIODE GEN PURP 1.7KV 200A WAFER
товару немає в наявності
Мінімальне замовлення: 31 шт
В кошику
од. на суму грн.
| SIDC11D60SIC3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 4A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE SIL CARB 600V 4A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 3459 шт
В кошику
од. на суму грн.
| SIDC14D120E6X1SA4 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE STD 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC14D120F6X1SA3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC14D120H6X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 1200V 25A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE STD 1200V 25A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC14D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC14D60C6Y |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC14D60E6X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 30A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STD 600V 30A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC14D60E6YX1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC14D60F6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 45A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STD 600V 45A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC161D170HX1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 1.7KV 300A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 300
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
Description: DIODE STANDARD 1.7KV 300A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 300
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
товару немає в наявності
В кошику
од. на суму грн.
| SIDC16D60SIC3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Description: DIODE SIL CARB 600V 5A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
товару немає в наявності
В кошику
од. на суму грн.
| SIDC19D60SIC3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE SIL CARB 600V 6A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC20D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STD 600V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC23D120E6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
Description: DIODE GEN PURP 1.2KV 25A WAFER
товару немає в наявності
Мінімальне замовлення: 178 шт
В кошику
од. на суму грн.
| SIDC23D120F6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
Description: DIODE GEN PURP 1.2KV 25A WAFER
товару немає в наявності
Мінімальне замовлення: 178 шт
В кошику
од. на суму грн.
| SIDC23D120H6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 35A WAFER
Description: DIODE GEN PURP 1.2KV 35A WAFER
товару немає в наявності
Мінімальне замовлення: 178 шт
В кошику
од. на суму грн.
| SIDC23D60E6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A WAFER
Description: DIODE GEN PURP 600V 50A WAFER
товару немає в наявності
Мінімальне замовлення: 178 шт
В кошику
од. на суму грн.
| SIDC23D60E6Y |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A WAFER
Description: DIODE GEN PURP 600V 50A WAFER
товару немає в наявності
Мінімальне замовлення: 283 шт
В кошику
од. на суму грн.
| SIDC24D30SIC3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 300V 10A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE SIL CARB 300V 10A WAFER
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC26D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 100A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: DIODE STD 600V 100A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
товару немає в наявності
В кошику
од. на суму грн.
| SIDC30D120E6X1SA2 |
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Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 35A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC30D120F6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Description: DIODE GP 1.2KV 35A WAFER
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 35 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
товару немає в наявності
В кошику
од. на суму грн.
| SIDC30D120H6X1SA4 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 50A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC30D60E6X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 600V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STD 600V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC32D170HX1SA3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STD 1700V 50A SAWN ON FOIL
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Description: DIODE STD 1700V 50A SAWN ON FOIL
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
товару немає в наявності
В кошику
од. на суму грн.
| SIDC38D60C6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 150A WAFER
Description: DIODE GEN PURP 600V 150A WAFER
товару немає в наявності
Мінімальне замовлення: 106 шт
В кошику
од. на суму грн.
| SIDC42D120E6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 50A WAFER
Description: DIODE GEN PURP 1.2KV 50A WAFER
товару немає в наявності
Мінімальне замовлення: 96 шт
В кошику
од. на суму грн.
| SIDC42D120F6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 50A WAFER
Description: DIODE GEN PURP 1.2KV 50A WAFER
товару немає в наявності
Мінімальне замовлення: 96 шт
В кошику
од. на суму грн.
| SIDC42D120H6 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 75A WAFER
Description: DIODE GEN PURP 1.2KV 75A WAFER
товару немає в наявності
Мінімальне замовлення: 96 шт
В кошику
од. на суму грн.



