| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43TR82560D-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 256Mx8bit Clock frequency: 1066MHz Access time: 13.75ns Case: TWBGA78 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR82560D-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C Mounting: SMD Operating temperature: -40...95°C Kind of package: reel; tape Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Kind of interface: parallel Memory capacity: 2Gb Clock frequency: 1066MHz Supply voltage: 1.5V DC Access time: 13.75ns Memory organisation: 256Mx8bit Case: TWBGA78 |
товар відсутній |
||
| IS43TR82560DL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx8bit Clock frequency: 1066MHz Access time: 13.75ns Case: TWBGA78 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR82560DL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx8bit Clock frequency: 1066MHz Access time: 13.75ns Case: TWBGA78 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR85120BL-125KBLI | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1066MHz Access time: 13.75ns Case: TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC кількість в упаковці: 242 шт |
товар відсутній |
||
| IS45S16100H-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 286 шт |
товар відсутній |
||
| IS45S16100H-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 286 шт |
товар відсутній |
||
| IS45S16100H-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TFBGA60; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Memory capacity: 16Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16100H-7TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
товар відсутній |
||
| IS45S16100H-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TSOP50 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Memory capacity: 16Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16160J-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16160J-6BLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz кількість в упаковці: 2500 шт |
товар відсутній |
||
| IS45S16160J-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz кількість в упаковці: 1 шт |
товар відсутній |
||
| IS45S16160J-6TLA1 -TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16160J-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16160J-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...105°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16160J-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...105°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 2500 шт |
товар відсутній |
||
| IS45S16160J-7TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 1 шт |
товар відсутній |
||
| IS45S16160J-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16160J-7TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 1 шт |
товар відсутній |
||
| IS45S16160J-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16320F-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
товар відсутній |
||
| IS45S16320F-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
товар відсутній |
||
| IS45S16320F-6TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16320F-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
товар відсутній |
||
| IS45S16320F-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
товар відсутній |
||
| IS45S16320F-7CTLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16320F-7CTLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16320F-7CTLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16320F-7CTLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Kind of package: reel; tape Memory: 512Mb DRAM Supply voltage: 3...3.6V DC Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16320F-7TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
товар відсутній |
||
| IS45S16320F-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16320F-7TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
товар відсутній |
||
| IS45S16320F-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16400J-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16400J-6BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16400J-6CTLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16400J-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
товар відсутній |
||
| IS45S16400J-6TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16400J-7BLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16400J-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16400J-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16400J-7CTLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16400J-7TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
товар відсутній |
||
| IS45S16400J-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16400J-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16800F-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16800F-6BLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
товар відсутній |
||
| IS45S16800F-6CTLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
товар відсутній |
||
| IS45S16800F-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
товар відсутній |
||
| IS45S16800F-6TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16800F-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16800F-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 348 шт |
товар відсутній |
||
| IS45S16800F-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54 Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
товар відсутній |
||
| IS45S16800F-7CTLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
товар відсутній |
||
| IS45S16800F-7CTLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16800F-7CTLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
товар відсутній |
||
| IS45S16800F-7CTLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...105°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
товар відсутній |
||
| IS45S16800F-7TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
товар відсутній |
||
| IS45S16800F-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
товар відсутній |
| IS43TR82560D-125KBLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
товар відсутній
| IS43TR82560D-125KBLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Kind of interface: parallel
Memory capacity: 2Gb
Clock frequency: 1066MHz
Supply voltage: 1.5V DC
Access time: 13.75ns
Memory organisation: 256Mx8bit
Case: TWBGA78
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Kind of interface: parallel
Memory capacity: 2Gb
Clock frequency: 1066MHz
Supply voltage: 1.5V DC
Access time: 13.75ns
Memory organisation: 256Mx8bit
Case: TWBGA78
товар відсутній
| IS43TR82560DL-125KBLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товар відсутній
| IS43TR82560DL-125KBLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.35V DC
товар відсутній
| IS43TR85120BL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
кількість в упаковці: 242 шт
товар відсутній
| IS45S16100H-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
товар відсутній
| IS45S16100H-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
товар відсутній
| IS45S16100H-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TFBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TFBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16100H-7TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
| IS45S16100H-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TSOP50 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TSOP50 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16160J-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 348 шт
товар відсутній
| IS45S16160J-6BLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 2500 шт
товар відсутній
| IS45S16160J-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
товар відсутній
| IS45S16160J-6TLA1 -TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16160J-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 348 шт
товар відсутній
| IS45S16160J-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 348 шт
товар відсутній
| IS45S16160J-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 2500 шт
товар відсутній
| IS45S16160J-7TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1 шт
товар відсутній
| IS45S16160J-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16160J-7TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1 шт
товар відсутній
| IS45S16160J-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16320F-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
| IS45S16320F-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
| IS45S16320F-6TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16320F-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
| IS45S16320F-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
| IS45S16320F-7CTLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16320F-7CTLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16320F-7CTLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16320F-7CTLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 512Mb DRAM
Supply voltage: 3...3.6V DC
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 512Mb DRAM
Supply voltage: 3...3.6V DC
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16320F-7TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
| IS45S16320F-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16320F-7TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
| IS45S16320F-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16400J-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
| IS45S16400J-6BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
| IS45S16400J-6CTLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16400J-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
| IS45S16400J-6TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16400J-7BLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16400J-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
| IS45S16400J-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16400J-7CTLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16400J-7TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
| IS45S16400J-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16400J-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16800F-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
товар відсутній
| IS45S16800F-6BLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
| IS45S16800F-6CTLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
| IS45S16800F-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
товар відсутній
| IS45S16800F-6TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16800F-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
товар відсутній
| IS45S16800F-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
товар відсутній
| IS45S16800F-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
| IS45S16800F-7CTLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
| IS45S16800F-7CTLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16800F-7CTLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
| IS45S16800F-7CTLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...105°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній
| IS45S16800F-7TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
товар відсутній
| IS45S16800F-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній