| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS61LF12836A-7.5TQLI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Access time: 7.5ns Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 128kx36bit Kind of package: in-tray; tube Case: QFP100 Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||||||||
| IS61LF12836A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Access time: 7.5ns Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 128kx36bit Kind of package: reel; tape Case: QFP100 Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| IS61LF12836EC-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100 Mounting: SMD Access time: 6.5ns Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 128kx36bit Kind of package: in-tray; tube Case: QFP100 Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||||||||
| IS64LF12836EC-7.5B3LA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Mounting: SMD Access time: 7.5ns Type of integrated circuit: SRAM memory Operating temperature: -40...125°C Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 128kx36bit Kind of package: in-tray; tube Case: TFBGA165 Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. | |||||||||||||
| IS61LF12836EC-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Access time: 7.5ns Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 128kx36bit Kind of package: reel; tape Case: QFP100 Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
 |
IS61NLF12836A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Mounting: SMD Access time: 7.5ns Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 128kx36bit Kind of package: in-tray; tube Case: TQFP100 Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | ||||||||||||
|
|
IS61NLF12836A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Mounting: SMD Access time: 7.5ns Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 128kx36bit Kind of package: reel; tape Case: TQFP100 Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
| IS66WVE2M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE4M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVH8M8ALL-166B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 1.8V Access time: 36ns Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV1M16EBLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-70TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WVE4M16EALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE4M16ECLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV1M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE1M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE2M16EALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE2M16ECLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE4M16TBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV1M16EBLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV1M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVO32M8DALL-200BLI | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 256Mb SRAM Memory organisation: 32Mx8bit Operating voltage: 1.8V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVH16M8DBLL-100B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 2.7...3.6V Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE2M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE4M16EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVC4M16EALL-7010BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVC4M16ECLL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE4M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-70TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVC2M16EALL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVC2M16ECLL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVC4M16EALL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE1M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE2M16ECLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE2M16TCLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE4M16ECLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVE4M16TBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVH16M8DALL-166B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 1.7...1.95V Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS66WVH8M8ALL-166B1LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 1.8V Access time: 36ns Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IS61NLP51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Access time: 3ns Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 512kx36bit Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. | |||||||||||||
| IS61NLP51236B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Access time: 3ns Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 512kx36bit Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
| IS61NLP51236B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Access time: 3ns Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 512kx36bit Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||||||||
| IS61NLP51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Access time: 3ns Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 512kx36bit Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| IS43LD16320A-25BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 400MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of memory: LPDDR2; SDRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns |
товару немає в наявності |
Мінімальне замовлення: 171 шт В кошику од. на суму грн. | |||||||||||||
| IS43LD16640C-18BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 533MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns |
товару немає в наявності |
Мінімальне замовлення: 171 шт В кошику од. на суму грн. | |||||||||||||
| IS43LD16640C-25BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns |
товару немає в наявності |
Мінімальне замовлення: 171 шт В кошику од. на суму грн. | |||||||||||||
| IS43LD16640C-25BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
| IS34MW04G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 4Gb FLASH Kind of interface: parallel Case: TSOP48 Interface: parallel 8bit Operating voltage: 1.7...1.95V Kind of memory: NAND |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43TR85120BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1.066GHz Access time: 13.75ns Case: TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
товару немає в наявності |
Мінімальне замовлення: 242 шт В кошику од. на суму грн. | |||||||||||||
 |
IS25WP016D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Operating temperature: -40...105°C Memory: 16Mb FLASH Operating frequency: 133MHz Kind of interface: serial Case: SO8 Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Kind of memory: NOR Mounting: SMD Type of integrated circuit: FLASH memory |
на замовлення 418 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
 |
IS25WP016D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Operating temperature: -40...105°C Memory: 16Mb FLASH Operating frequency: 133MHz Kind of interface: serial Case: SO8 Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Kind of memory: NOR Mounting: SMD Type of integrated circuit: FLASH memory |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
| IS25WP01G-RILE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V Operating temperature: -40...105°C Memory: 1Gb FLASH Operating frequency: 104MHz Kind of interface: serial Kind of package: in-tray; tube Case: LFBGA24 Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Kind of memory: NOR Mounting: SMD Type of integrated circuit: FLASH memory |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
| IS25WP01G-RILA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V Operating temperature: -40...125°C Memory: 1Gb FLASH Operating frequency: 104MHz Kind of interface: serial Kind of package: in-tray; tube Case: LFBGA24 Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Kind of memory: NOR Mounting: SMD Type of integrated circuit: FLASH memory |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |||||||||||||
 |
IS25WP016D-JBLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Operating temperature: -40...125°C Memory: 16Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: in-tray; tube Case: SO8 Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Kind of memory: NOR Mounting: SMD Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
IS25WP016D-JBLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Operating temperature: -40...125°C Memory: 16Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SO8 Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Kind of memory: NOR Mounting: SMD Type of integrated circuit: FLASH memory |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| IS61LF12836A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Case: QFP100
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Case: QFP100
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61LF12836A-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: reel; tape
Case: QFP100
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: reel; tape
Case: QFP100
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS61LF12836EC-6.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Mounting: SMD
Access time: 6.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Case: QFP100
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Mounting: SMD
Access time: 6.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Case: QFP100
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS64LF12836EC-7.5B3LA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Case: TFBGA165
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Case: TFBGA165
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику
од. на суму грн.
| IS61LF12836EC-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: reel; tape
Case: QFP100
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: reel; tape
Case: QFP100
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS61NLF12836A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Case: TQFP100
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Case: TQFP100
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61NLF12836A-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: reel; tape
Case: TQFP100
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx36bit
Kind of package: reel; tape
Case: TQFP100
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS66WVE2M16EBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE4M16EBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVH8M8ALL-166B1LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Access time: 36ns
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Access time: 36ns
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WV51216EBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WV1M16EBLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WV51216EBLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS66WV51216EBLL-70TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS66WVE4M16EALL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE4M16ECLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WV1M16EBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE1M16EBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE2M16EALL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE2M16ECLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE4M16TBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WV1M16EBLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WV1M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVO32M8DALL-200BLI |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVH16M8DBLL-100B1LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE2M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE4M16EALL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVC4M16EALL-7010BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVC4M16ECLL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE4M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WV51216EALL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WV51216EBLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IS66WV51216EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WV51216EBLL-70TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IS66WVC2M16EALL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVC2M16ECLL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVC4M16EALL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE1M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE2M16ECLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE2M16TCLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE4M16ECLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE4M16TBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVH16M8DALL-166B1LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVH8M8ALL-166B1LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Access time: 36ns
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Access time: 36ns
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS61NLP51236B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику
од. на суму грн.
| IS61NLP51236B-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IS61NLP51236B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61NLP51236B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS43LD16320A-25BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
товару немає в наявності
Мінімальне замовлення: 171 шт
В кошику
од. на суму грн.
| IS43LD16640C-18BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 533MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 533MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
товару немає в наявності
Мінімальне замовлення: 171 шт
В кошику
од. на суму грн.
| IS43LD16640C-25BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
товару немає в наявності
Мінімальне замовлення: 171 шт
В кошику
од. на суму грн.
| IS43LD16640C-25BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IS34MW04G084-TLI |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 4Gb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: parallel 8bit
Operating voltage: 1.7...1.95V
Kind of memory: NAND
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 4Gb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: parallel 8bit
Operating voltage: 1.7...1.95V
Kind of memory: NAND
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR85120BL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товару немає в наявності
Мінімальне замовлення: 242 шт
В кошику
од. на суму грн.
| IS25WP016D-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Memory: 16Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Case: SO8
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Memory: 16Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Case: SO8
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
на замовлення 418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.83 грн |
| 10+ | 81.51 грн |
| 13+ | 74.71 грн |
| 25+ | 73.02 грн |
| 36+ | 70.47 грн |
| 90+ | 67.92 грн |
| IS25WP016D-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Memory: 16Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Case: SO8
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Memory: 16Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Case: SO8
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.95 грн |
| 13+ | 78.11 грн |
| 35+ | 73.86 грн |
| IS25WP01G-RILE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Memory: 1Gb FLASH
Operating frequency: 104MHz
Kind of interface: serial
Kind of package: in-tray; tube
Case: LFBGA24
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Memory: 1Gb FLASH
Operating frequency: 104MHz
Kind of interface: serial
Kind of package: in-tray; tube
Case: LFBGA24
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS25WP01G-RILA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...125°C
Memory: 1Gb FLASH
Operating frequency: 104MHz
Kind of interface: serial
Kind of package: in-tray; tube
Case: LFBGA24
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...125°C
Memory: 1Gb FLASH
Operating frequency: 104MHz
Kind of interface: serial
Kind of package: in-tray; tube
Case: LFBGA24
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS25WP016D-JBLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...125°C
Memory: 16Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: in-tray; tube
Case: SO8
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...125°C
Memory: 16Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: in-tray; tube
Case: SO8
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
товару немає в наявності
В кошику
од. на суму грн.
| IS25WP016D-JBLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...125°C
Memory: 16Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SO8
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...125°C
Memory: 16Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SO8
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.