| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IS66WVE2M16EBLL-70BLI-TR | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WVE4M16EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WVC4M16EALL-7010BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WVC4M16ECLL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |
| IS66WVE4M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WV51216EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WV51216EBLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |
| IS66WV51216EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WV51216EBLL-70TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |
| IS66WVC2M16EALL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |
| IS66WVC2M16ECLL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |
| IS66WVC4M16EALL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |
| IS66WVE1M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WVE2M16ECLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WVE2M16TCLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WVE4M16ECLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WVE4M16TBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS66WVH16M8DALL-166B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 1.7...1.95V Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |
| IS66WVH8M8ALL-166B1LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 1.8V Access time: 36ns Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS61NLP51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Access time: 3ns Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 512kx36bit Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. | |
| IS61NLP51236B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Access time: 3ns Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 512kx36bit Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| IS61NLP51236B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Access time: 3ns Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 512kx36bit Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |
| IS61NLP51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Access time: 3ns Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 512kx36bit Operating voltage: 3.3V Kind of memory: SRAM |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |
| IS43LD16320A-25BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 400MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of memory: LPDDR2; SDRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns |
товару немає в наявності |
Мінімальне замовлення: 171 шт В кошику од. на суму грн. | |
| IS43LD16640C-18BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 533MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns |
товару немає в наявності |
Мінімальне замовлення: 171 шт В кошику од. на суму грн. | |
| IS43LD16640C-25BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns |
товару немає в наявності |
Мінімальне замовлення: 171 шт В кошику од. на суму грн. | |
| IS43LD16640C-25BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Access time: 18ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| IS66WVE2M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE4M16EALL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVC4M16EALL-7010BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVC4M16ECLL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE4M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WV51216EALL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WV51216EBLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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Мінімальне замовлення: 1000 шт
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од. на суму грн.
| IS66WV51216EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WV51216EBLL-70TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IS66WVC2M16EALL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVC2M16ECLL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVC4M16EALL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVE1M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE2M16ECLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE2M16TCLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE4M16ECLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVE4M16TBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS66WVH16M8DALL-166B1LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS66WVH8M8ALL-166B1LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Access time: 36ns
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Access time: 36ns
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS61NLP51236B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 144 шт
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од. на суму грн.
| IS61NLP51236B-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IS61NLP51236B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61NLP51236B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Access time: 3ns
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Kind of memory: SRAM
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS43LD16320A-25BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
товару немає в наявності
Мінімальне замовлення: 171 шт
В кошику
од. на суму грн.
| IS43LD16640C-18BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 533MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 533MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
товару немає в наявності
Мінімальне замовлення: 171 шт
В кошику
од. на суму грн.
| IS43LD16640C-25BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
товару немає в наявності
Мінімальне замовлення: 171 шт
В кошику
од. на суму грн.
| IS43LD16640C-25BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx8
Kind of memory: LPDDR2; SDRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Access time: 18ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.