Продукція > LUGUANG ELECTRONIC > Всі товари виробника LUGUANG ELECTRONIC (1295) > Сторінка 16 з 22
| Фото | Назва | Виробник | Інформація |
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LGEGW40N120F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Power dissipation: 110W Case: TO247 Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 134ns Turn-off time: 503ns Gate-emitter voltage: ±30V Pulsed collector current: 120A кількість в упаковці: 1 шт |
на замовлення 130 шт: термін постачання 14-21 дні (днів) |
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| LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 135ns Turn-off time: 270ns Gate-emitter voltage: ±20V Pulsed collector current: 160A |
на замовлення 141 шт: термін постачання 21-30 дні (днів) |
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| LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 135ns Turn-off time: 270ns Gate-emitter voltage: ±20V Pulsed collector current: 160A кількість в упаковці: 1 шт |
на замовлення 141 шт: термін постачання 14-21 дні (днів) |
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LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 121ns Turn-off time: 310ns Gate-emitter voltage: ±30V Pulsed collector current: 120A |
на замовлення 149 шт: термін постачання 21-30 дні (днів) |
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LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 121ns Turn-off time: 310ns Gate-emitter voltage: ±30V Pulsed collector current: 120A кількість в упаковці: 1 шт |
на замовлення 149 шт: термін постачання 14-21 дні (днів) |
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LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 83nC Kind of package: tube Turn-on time: 96ns Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 187ns |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 83nC Kind of package: tube Turn-on time: 96ns Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 187ns кількість в упаковці: 1 шт |
на замовлення 69 шт: термін постачання 14-21 дні (днів) |
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LGEGW50N65F1A | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
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LGEGW50N65F1A | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns кількість в упаковці: 1 шт |
на замовлення 106 шт: термін постачання 14-21 дні (днів) |
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LGEGW50N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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LGEGW50N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns кількість в упаковці: 1 шт |
на замовлення 144 шт: термін постачання 14-21 дні (днів) |
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LGEGW50N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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LGEGW50N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns кількість в упаковці: 1 шт |
на замовлення 146 шт: термін постачання 14-21 дні (днів) |
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LGEGW60N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 151W Collector current: 60A Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Turn-on time: 123ns Turn-off time: 256ns |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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LGEGW60N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 151W Collector current: 60A Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Turn-on time: 123ns Turn-off time: 256ns кількість в упаковці: 1 шт |
на замовлення 117 шт: термін постачання 14-21 дні (днів) |
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LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Power dissipation: 71W Case: TO247 Mounting: THT Gate charge: 192nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 161ns Turn-off time: 274ns Gate-emitter voltage: ±30V Collector current: 75A Pulsed collector current: 300A Collector-emitter voltage: 650V |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Power dissipation: 71W Case: TO247 Mounting: THT Gate charge: 192nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 161ns Turn-off time: 274ns Gate-emitter voltage: ±30V Collector current: 75A Pulsed collector current: 300A Collector-emitter voltage: 650V кількість в упаковці: 1 шт |
на замовлення 150 шт: термін постачання 14-21 дні (днів) |
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LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Power dissipation: 500W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 215ns Turn-off time: 225ns Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 225A Collector-emitter voltage: 650V |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Power dissipation: 500W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 215ns Turn-off time: 225ns Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 225A Collector-emitter voltage: 650V кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Pulsed collector current: 300A Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Turn-on time: 156ns Turn-off time: 348ns Collector current: 75A Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Pulsed collector current: 300A Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Turn-on time: 156ns Turn-off time: 348ns Collector current: 75A Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 148 шт: термін постачання 14-21 дні (днів) |
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LGET1117-1.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LGET1117-1.8 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LGET1117-2.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 2.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.9...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LGET1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Kind of package: reel; tape |
на замовлення 3990 шт: термін постачання 21-30 дні (днів) |
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LGET1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
на замовлення 2003 шт: термін постачання 21-30 дні (днів) |
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LGET1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape |
на замовлення 3701 шт: термін постачання 21-30 дні (днів) |
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LGET1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3990 шт: термін постачання 14-21 дні (днів) |
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LGET1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V кількість в упаковці: 5 шт |
на замовлення 2003 шт: термін постачання 14-21 дні (днів) |
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LGET1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3701 шт: термін постачання 14-21 дні (днів) |
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LL4148 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 0.62V Max. load current: 0.3A Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 11362 шт: термін постачання 21-30 дні (днів) |
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LL4148 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 0.62V Max. load current: 0.3A Max. forward impulse current: 1A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 11362 шт: термін постачання 14-21 дні (днів) |
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| LL4150 | LUGUANG ELECTRONIC |
LL4150-LGE SMD universal diodes |
на замовлення 15415 шт: термін постачання 14-21 дні (днів) |
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LL4151 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A Case: MiniMELF glass Mounting: SMD Semiconductor structure: single diode Type of diode: switching Load current: 0.3A Max. load current: 0.4A Max. forward impulse current: 0.5A Max. off-state voltage: 50V Kind of package: reel; tape |
на замовлення 17069 шт: термін постачання 21-30 дні (днів) |
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LL4151 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A Case: MiniMELF glass Mounting: SMD Semiconductor structure: single diode Type of diode: switching Load current: 0.3A Max. load current: 0.4A Max. forward impulse current: 0.5A Max. off-state voltage: 50V Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 17069 шт: термін постачання 14-21 дні (днів) |
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| LL4448 | LUGUANG ELECTRONIC |
LL4448-LGE SMD universal diodes |
на замовлення 11785 шт: термін постачання 14-21 дні (днів) |
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| M2 | LUGUANG ELECTRONIC |
M2-LGE SMD universal diodes |
на замовлення 4638 шт: термін постачання 14-21 дні (днів) |
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M3 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 200V Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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M3 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 200V Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A кількість в упаковці: 10 шт |
на замовлення 73 шт: термін постачання 14-21 дні (днів) |
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M4 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 1906 шт: термін постачання 21-30 дні (днів) |
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M4 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A кількість в упаковці: 10 шт |
на замовлення 1906 шт: термін постачання 14-21 дні (днів) |
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M6 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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M6 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A кількість в упаковці: 10 шт |
на замовлення 78 шт: термін постачання 14-21 дні (днів) |
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M7 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMAJ Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 3889 шт: термін постачання 21-30 дні (днів) |
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M7 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMAJ Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape кількість в упаковці: 10 шт |
на замовлення 3889 шт: термін постачання 14-21 дні (днів) |
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| MB05F | LUGUANG ELECTRONIC |
MB05F-LGE SMD/THT sing. phase diode bridge rectif. |
на замовлення 3739 шт: термін постачання 14-21 дні (днів) |
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| MB05S | LUGUANG ELECTRONIC |
MB05S-LGE SMD/THT sing. phase diode bridge rectif. |
на замовлення 5248 шт: термін постачання 14-21 дні (днів) |
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MB10F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1219 шт: термін постачання 21-30 дні (днів) |
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MB10F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 5 шт |
на замовлення 1219 шт: термін постачання 14-21 дні (днів) |
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MB10M | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBM Electrical mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated |
на замовлення 5672 шт: термін постачання 21-30 дні (днів) |
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MB10M | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBM Electrical mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 5 шт |
на замовлення 5672 шт: термін постачання 14-21 дні (днів) |
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MB10S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4150 шт: термін постачання 21-30 дні (днів) |
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MB10S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 5 шт |
на замовлення 4150 шт: термін постачання 14-21 дні (днів) |
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| MB1F | LUGUANG ELECTRONIC | MB1F-LGE SMD/THT sing. phase diode bridge rectif. |
на замовлення 870 шт: термін постачання 14-21 дні (днів) |
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MB1S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 100V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2619 шт: термін постачання 21-30 дні (днів) |
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MB1S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 100V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
на замовлення 2619 шт: термін постачання 14-21 дні (днів) |
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| MB2F | LUGUANG ELECTRONIC | MB2F-LGE SMD/THT sing. phase diode bridge rectif. |
на замовлення 8320 шт: термін постачання 14-21 дні (днів) |
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| MB2M | LUGUANG ELECTRONIC | MB2M-LGE SMD/THT sing. phase diode bridge rectif. |
на замовлення 987 шт: термін постачання 14-21 дні (днів) |
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| MB2S | LUGUANG ELECTRONIC |
MB2S-LGE SMD/THT sing. phase diode bridge rectif. |
на замовлення 5490 шт: термін постачання 14-21 дні (днів) |
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| MB4F | LUGUANG ELECTRONIC | MB4F-LGE SMD/THT sing. phase diode bridge rectif. |
на замовлення 1420 шт: термін постачання 14-21 дні (днів) |
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| LGEGW40N120F |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
кількість в упаковці: 1 шт
на замовлення 130 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 341.16 грн |
| 3+ | 295.88 грн |
| 10+ | 253.05 грн |
| 30+ | 234.70 грн |
| 120+ | 219.24 грн |
| 240+ | 214.41 грн |
| LGEGW40N120F2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
на замовлення 141 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 284.30 грн |
| 3+ | 237.43 грн |
| 10+ | 210.87 грн |
| 30+ | 195.58 грн |
| 120+ | 182.70 грн |
| LGEGW40N120F2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
кількість в упаковці: 1 шт
на замовлення 141 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 341.16 грн |
| 3+ | 295.88 грн |
| 10+ | 253.05 грн |
| 30+ | 234.70 грн |
| 120+ | 219.24 грн |
| 240+ | 214.41 грн |
| LGEGW40N120TS |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
на замовлення 149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 284.30 грн |
| 3+ | 237.43 грн |
| 10+ | 210.87 грн |
| 30+ | 195.58 грн |
| 120+ | 182.70 грн |
| LGEGW40N120TS |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
кількість в упаковці: 1 шт
на замовлення 149 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 341.16 грн |
| 3+ | 295.88 грн |
| 10+ | 253.05 грн |
| 30+ | 234.70 грн |
| 120+ | 219.24 грн |
| 240+ | 214.41 грн |
| LGEGW40N65F1 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 187ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 187ns
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.12 грн |
| 10+ | 105.44 грн |
| 30+ | 97.39 грн |
| LGEGW40N65F1 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 187ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 187ns
кількість в упаковці: 1 шт
на замовлення 69 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.62 грн |
| 3+ | 148.44 грн |
| 10+ | 126.52 грн |
| 30+ | 116.86 грн |
| 120+ | 110.10 грн |
| 240+ | 107.21 грн |
| LGEGW50N65F1A |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
на замовлення 106 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.48 грн |
| 10+ | 129.58 грн |
| 30+ | 119.92 грн |
| LGEGW50N65F1A |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
кількість в упаковці: 1 шт
на замовлення 106 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.10 грн |
| 3+ | 182.54 грн |
| 10+ | 155.50 грн |
| 30+ | 143.91 грн |
| 120+ | 135.22 грн |
| 240+ | 133.28 грн |
| LGEGW50N65SEK |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
на замовлення 144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.48 грн |
| 10+ | 129.58 грн |
| 30+ | 119.92 грн |
| 120+ | 112.68 грн |
| LGEGW50N65SEK |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
кількість в упаковці: 1 шт
на замовлення 144 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.10 грн |
| 3+ | 182.54 грн |
| 10+ | 155.50 грн |
| 30+ | 143.91 грн |
| 120+ | 135.22 грн |
| 240+ | 133.28 грн |
| LGEGW50N65SEU |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.48 грн |
| 10+ | 129.58 грн |
| 30+ | 119.92 грн |
| 120+ | 112.68 грн |
| LGEGW50N65SEU |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
кількість в упаковці: 1 шт
на замовлення 146 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.10 грн |
| 3+ | 182.54 грн |
| 10+ | 155.50 грн |
| 30+ | 143.91 грн |
| 120+ | 135.22 грн |
| 240+ | 133.28 грн |
| LGEGW60N65SEU |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
на замовлення 117 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 172.24 грн |
| 10+ | 152.92 грн |
| 30+ | 141.65 грн |
| LGEGW60N65SEU |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
кількість в упаковці: 1 шт
на замовлення 117 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 247.55 грн |
| 3+ | 214.64 грн |
| 10+ | 183.51 грн |
| 30+ | 169.98 грн |
| 120+ | 159.36 грн |
| 240+ | 155.50 грн |
| LGEGW75N65F |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 161ns
Turn-off time: 274ns
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 161ns
Turn-off time: 274ns
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.10 грн |
| 3+ | 222.94 грн |
| 10+ | 196.38 грн |
| 30+ | 183.51 грн |
| 120+ | 170.63 грн |
| LGEGW75N65F |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 161ns
Turn-off time: 274ns
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 161ns
Turn-off time: 274ns
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
на замовлення 150 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 319.32 грн |
| 3+ | 277.82 грн |
| 10+ | 235.66 грн |
| 30+ | 220.21 грн |
| 120+ | 204.75 грн |
| 240+ | 201.86 грн |
| LGEGW75N65FP |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Collector-emitter voltage: 650V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.10 грн |
| 3+ | 222.94 грн |
| 10+ | 196.38 грн |
| 30+ | 183.51 грн |
| LGEGW75N65FP |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 319.32 грн |
| 3+ | 277.82 грн |
| 10+ | 235.66 грн |
| 30+ | 220.21 грн |
| 120+ | 204.75 грн |
| 240+ | 201.86 грн |
| LGEGW75N65S |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.10 грн |
| 3+ | 222.94 грн |
| 10+ | 196.38 грн |
| 30+ | 182.70 грн |
| 120+ | 171.43 грн |
| LGEGW75N65S |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 148 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 319.32 грн |
| 3+ | 277.82 грн |
| 10+ | 235.66 грн |
| 30+ | 219.24 грн |
| 120+ | 205.72 грн |
| 240+ | 201.86 грн |
| LGET1117-1.5 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-1.8 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-2.5 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-3.3 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
на замовлення 3990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.48 грн |
| 55+ | 7.50 грн |
| 100+ | 6.27 грн |
| 500+ | 5.30 грн |
| 1000+ | 4.99 грн |
| 2000+ | 4.51 грн |
| LGET1117-5.0 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
на замовлення 2003 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.35 грн |
| 55+ | 8.02 грн |
| 100+ | 6.70 грн |
| 500+ | 5.69 грн |
| 1000+ | 5.34 грн |
| 2000+ | 4.82 грн |
| LGET1117-ADJ |
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Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
на замовлення 3701 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.52 грн |
| 50+ | 8.11 грн |
| 100+ | 6.76 грн |
| 500+ | 5.75 грн |
| 1000+ | 5.39 грн |
| 2000+ | 4.88 грн |
| LGET1117-3.3 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3990 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 14.98 грн |
| 35+ | 9.35 грн |
| 100+ | 7.52 грн |
| 500+ | 6.36 грн |
| 1000+ | 5.99 грн |
| 2000+ | 5.41 грн |
| 4000+ | 5.28 грн |
| LGET1117-5.0 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
кількість в упаковці: 5 шт
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
кількість в упаковці: 5 шт
на замовлення 2003 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.02 грн |
| 35+ | 9.99 грн |
| 100+ | 8.04 грн |
| 500+ | 6.83 грн |
| 1000+ | 6.40 грн |
| 2000+ | 5.79 грн |
| 4000+ | 5.69 грн |
| LGET1117-ADJ |
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Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3701 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.23 грн |
| 30+ | 10.11 грн |
| 100+ | 8.11 грн |
| 500+ | 6.90 грн |
| 1000+ | 6.47 грн |
| 2000+ | 5.85 грн |
| 4000+ | 5.72 грн |
| LL4148 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 11362 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.40 грн |
| 112+ | 3.62 грн |
| 177+ | 2.29 грн |
| 274+ | 1.47 грн |
| 417+ | 0.97 грн |
| 500+ | 0.87 грн |
| LL4148 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 11362 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.48 грн |
| 67+ | 4.51 грн |
| 106+ | 2.74 грн |
| 164+ | 1.77 грн |
| 250+ | 1.16 грн |
| 500+ | 1.04 грн |
| LL4150 |
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Виробник: LUGUANG ELECTRONIC
LL4150-LGE SMD universal diodes
LL4150-LGE SMD universal diodes
на замовлення 15415 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 159+ | 1.97 грн |
| 1190+ | 0.96 грн |
| 3270+ | 0.91 грн |
| LL4151 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A
Case: MiniMELF glass
Mounting: SMD
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.3A
Max. load current: 0.4A
Max. forward impulse current: 0.5A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A
Case: MiniMELF glass
Mounting: SMD
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.3A
Max. load current: 0.4A
Max. forward impulse current: 0.5A
Max. off-state voltage: 50V
Kind of package: reel; tape
на замовлення 17069 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 530+ | 0.82 грн |
| 535+ | 0.76 грн |
| 550+ | 0.73 грн |
| LL4151 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A
Case: MiniMELF glass
Mounting: SMD
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.3A
Max. load current: 0.4A
Max. forward impulse current: 0.5A
Max. off-state voltage: 50V
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A
Case: MiniMELF glass
Mounting: SMD
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.3A
Max. load current: 0.4A
Max. forward impulse current: 0.5A
Max. off-state voltage: 50V
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 17069 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 320+ | 0.94 грн |
| 500+ | 0.88 грн |
| LL4448 |
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Виробник: LUGUANG ELECTRONIC
LL4448-LGE SMD universal diodes
LL4448-LGE SMD universal diodes
на замовлення 11785 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 146+ | 2.14 грн |
| 2000+ | 0.57 грн |
| 5510+ | 0.54 грн |
| M2 |
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Виробник: LUGUANG ELECTRONIC
M2-LGE SMD universal diodes
M2-LGE SMD universal diodes
на замовлення 4638 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 109+ | 2.87 грн |
| 1360+ | 0.84 грн |
| 3730+ | 0.79 грн |
| M3 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 73 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| M3 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
кількість в упаковці: 10 шт
на замовлення 73 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 4.16 грн |
| 100+ | 3.01 грн |
| 500+ | 0.76 грн |
| 5000+ | 0.71 грн |
| M4 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 1906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 4.94 грн |
| 350+ | 1.16 грн |
| 500+ | 0.87 грн |
| M4 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
кількість в упаковці: 10 шт
на замовлення 1906 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 5.93 грн |
| 210+ | 1.44 грн |
| 500+ | 1.04 грн |
| 5000+ | 0.93 грн |
| 20000+ | 0.92 грн |
| M6 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 78 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| M6 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
кількість в упаковці: 10 шт
на замовлення 78 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 4.16 грн |
| 100+ | 3.01 грн |
| 500+ | 0.82 грн |
| 5000+ | 0.72 грн |
| 20000+ | 0.71 грн |
| M7 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMAJ
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMAJ
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3889 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 170+ | 2.60 грн |
| 340+ | 1.22 грн |
| 500+ | 0.92 грн |
| M7 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMAJ
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMAJ
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 10 шт
на замовлення 3889 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 3.12 грн |
| 200+ | 1.51 грн |
| 500+ | 1.10 грн |
| 5000+ | 0.99 грн |
| 20000+ | 0.96 грн |
| MB05F |
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Виробник: LUGUANG ELECTRONIC
MB05F-LGE SMD/THT sing. phase diode bridge rectif.
MB05F-LGE SMD/THT sing. phase diode bridge rectif.
на замовлення 3739 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 375+ | 3.07 грн |
| 1025+ | 2.90 грн |
| MB05S |
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Виробник: LUGUANG ELECTRONIC
MB05S-LGE SMD/THT sing. phase diode bridge rectif.
MB05S-LGE SMD/THT sing. phase diode bridge rectif.
на замовлення 5248 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.41 грн |
| 365+ | 3.13 грн |
| 1005+ | 2.96 грн |
| MB10F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1219 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.46 грн |
| 140+ | 2.93 грн |
| 250+ | 2.64 грн |
| 1000+ | 2.33 грн |
| MB10F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 5 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 5 шт
на замовлення 1219 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.55 грн |
| 100+ | 3.65 грн |
| 250+ | 3.17 грн |
| 1000+ | 2.80 грн |
| MB10M |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
на замовлення 5672 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.05 грн |
| 100+ | 4.06 грн |
| 115+ | 3.65 грн |
| 500+ | 3.24 грн |
| MB10M |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 5 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 5 шт
на замовлення 5672 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 12.07 грн |
| 60+ | 5.05 грн |
| 100+ | 4.38 грн |
| 500+ | 3.89 грн |
| MB10S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.63 грн |
| 130+ | 3.20 грн |
| 250+ | 2.88 грн |
| 1000+ | 2.55 грн |
| 3000+ | 2.51 грн |
| MB10S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 5 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 5 шт
на замовлення 4150 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.76 грн |
| 80+ | 3.99 грн |
| 250+ | 3.46 грн |
| 1000+ | 3.06 грн |
| 3000+ | 3.01 грн |
| MB1F |
Виробник: LUGUANG ELECTRONIC
MB1F-LGE SMD/THT sing. phase diode bridge rectif.
MB1F-LGE SMD/THT sing. phase diode bridge rectif.
на замовлення 870 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 8.37 грн |
| 360+ | 3.20 грн |
| 985+ | 3.02 грн |
| MB1S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2619 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.07 грн |
| 54+ | 7.57 грн |
| 78+ | 5.18 грн |
| 129+ | 3.12 грн |
| 250+ | 2.81 грн |
| 1000+ | 2.48 грн |
| MB1S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 2619 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.88 грн |
| 32+ | 9.43 грн |
| 47+ | 6.22 грн |
| 100+ | 3.75 грн |
| 250+ | 3.37 грн |
| 1000+ | 2.97 грн |
| 3000+ | 2.94 грн |
| MB2F |
Виробник: LUGUANG ELECTRONIC
MB2F-LGE SMD/THT sing. phase diode bridge rectif.
MB2F-LGE SMD/THT sing. phase diode bridge rectif.
на замовлення 8320 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 6.82 грн |
| 365+ | 3.16 грн |
| 995+ | 2.99 грн |
| 5000+ | 2.98 грн |
| MB2M |
Виробник: LUGUANG ELECTRONIC
MB2M-LGE SMD/THT sing. phase diode bridge rectif.
MB2M-LGE SMD/THT sing. phase diode bridge rectif.
на замовлення 987 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.32 грн |
| 250+ | 4.57 грн |
| 690+ | 4.32 грн |
| MB2S |
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Виробник: LUGUANG ELECTRONIC
MB2S-LGE SMD/THT sing. phase diode bridge rectif.
MB2S-LGE SMD/THT sing. phase diode bridge rectif.
на замовлення 5490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 41+ | 7.70 грн |
| 360+ | 3.19 грн |
| 985+ | 3.01 грн |
| MB4F |
Виробник: LUGUANG ELECTRONIC
MB4F-LGE SMD/THT sing. phase diode bridge rectif.
MB4F-LGE SMD/THT sing. phase diode bridge rectif.
на замовлення 1420 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 44+ | 7.16 грн |
| 375+ | 3.06 грн |
| 1025+ | 2.90 грн |















