Продукція > LUGUANG ELECTRONIC > Всі товари виробника LUGUANG ELECTRONIC (1332) > Сторінка 16 з 23
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LGE3D06065F | LUGUANG ELECTRONIC |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.72V Max. load current: 30A Leakage current: 110µA Max. forward impulse current: 35A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D06065G | LUGUANG ELECTRONIC |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Case: DFN8x8 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 20A Leakage current: 0.1mA Max. forward impulse current: 25A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20120A | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 2.2V Max. forward impulse current: 160A Kind of package: tube Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20120D | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 160A Kind of package: tube Leakage current: 30µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20120H | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 130A Kind of package: tube Leakage current: 50µA Max. load current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D40120H | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. load current: 240A Max. forward impulse current: 260A Kind of package: tube Leakage current: 46µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3M18120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W Case: TO247-4 Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 235nC On-state resistance: 34mΩ Drain current: 74A Pulsed drain current: 220A Power dissipation: 428W Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3M40120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W Case: TO247-4 Mounting: THT Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 145nC On-state resistance: 69mΩ Power dissipation: 300W Drain current: 39A Drain-source voltage: 1.2kV Pulsed drain current: 117A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
LGEA1117-1.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LGEA1117-1.8 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LGEA1117-2.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.9...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LGEA1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT89 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Kind of package: reel; tape |
на замовлення 1005 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEA1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V Voltage drop: 1.15V |
на замовлення 1265 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEA1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT89 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape |
на замовлення 920 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEA1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT89 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 1005 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEA1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V Voltage drop: 1.15V кількість в упаковці: 5 шт |
на замовлення 1265 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEA1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT89 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 920 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGB15N65T2 | LUGUANG ELECTRONIC |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Turn-off time: 150ns Pulsed collector current: 60A Collector-emitter voltage: 650V Turn-on time: 40ns |
на замовлення 692 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGB15N65T2 | LUGUANG ELECTRONIC |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Turn-off time: 150ns Pulsed collector current: 60A Collector-emitter voltage: 650V Turn-on time: 40ns кількість в упаковці: 1 шт |
на замовлення 692 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGF15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Power dissipation: 30.6W Case: TO220FP Mounting: THT Gate charge: 45nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Turn-off time: 150ns Pulsed collector current: 60A Collector-emitter voltage: 650V Turn-on time: 40ns |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGF15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Power dissipation: 30.6W Case: TO220FP Mounting: THT Gate charge: 45nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Turn-off time: 150ns Pulsed collector current: 60A Collector-emitter voltage: 650V Turn-on time: 40ns кількість в упаковці: 1 шт |
на замовлення 191 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGP15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO220 Type of transistor: IGBT Power dissipation: 125W Case: TO220 Mounting: THT Gate charge: 45nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Turn-off time: 150ns Pulsed collector current: 60A Collector-emitter voltage: 650V Turn-on time: 40ns |
на замовлення 472 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGP15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO220 Type of transistor: IGBT Power dissipation: 125W Case: TO220 Mounting: THT Gate charge: 45nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Turn-off time: 150ns Pulsed collector current: 60A Collector-emitter voltage: 650V Turn-on time: 40ns кількість в упаковці: 1 шт |
на замовлення 472 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW100N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 100A Power dissipation: 500W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 135nC Kind of package: tube Turn-on time: 205ns Turn-off time: 375ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW100N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 100A Power dissipation: 500W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 135nC Kind of package: tube Turn-on time: 205ns Turn-off time: 375ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 125 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW15N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 40W; TO247 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247 Kind of package: tube Turn-on time: 50ns Gate charge: 0.12µC Turn-off time: 245ns Collector current: 15A Gate-emitter voltage: ±30V Power dissipation: 40W Pulsed collector current: 45A Collector-emitter voltage: 1.2kV |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW15N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 40W; TO247 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247 Kind of package: tube Turn-on time: 50ns Gate charge: 0.12µC Turn-off time: 245ns Collector current: 15A Gate-emitter voltage: ±30V Power dissipation: 40W Pulsed collector current: 45A Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 430 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW20N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 82W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 82W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 82nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 74ns Turn-off time: 232ns |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW20N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 82W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 82W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 82nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 74ns Turn-off time: 232ns кількість в упаковці: 1 шт |
на замовлення 146 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW25N120S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 100W; TO247 Type of transistor: IGBT Power dissipation: 100W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 57ns Turn-off time: 460ns Collector current: 25A Gate-emitter voltage: ±30V Pulsed collector current: 80A Collector-emitter voltage: 1.2kV |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW25N120S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 100W; TO247 Type of transistor: IGBT Power dissipation: 100W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 57ns Turn-off time: 460ns Collector current: 25A Gate-emitter voltage: ±30V Pulsed collector current: 80A Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 102 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW40N120F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Power dissipation: 110W Case: TO247 Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 134ns Turn-off time: 503ns Gate-emitter voltage: ±30V Pulsed collector current: 120A |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW40N120F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Power dissipation: 110W Case: TO247 Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 134ns Turn-off time: 503ns Gate-emitter voltage: ±30V Pulsed collector current: 120A кількість в упаковці: 1 шт |
на замовлення 130 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
| LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 135ns Turn-off time: 270ns Gate-emitter voltage: ±20V Pulsed collector current: 160A |
на замовлення 141 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
| LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 135ns Turn-off time: 270ns Gate-emitter voltage: ±20V Pulsed collector current: 160A кількість в упаковці: 1 шт |
на замовлення 141 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||
|
LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 121ns Turn-off time: 310ns Gate-emitter voltage: ±30V Pulsed collector current: 120A |
на замовлення 149 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 121ns Turn-off time: 310ns Gate-emitter voltage: ±30V Pulsed collector current: 120A кількість в упаковці: 1 шт |
на замовлення 149 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 83nC Kind of package: tube Turn-on time: 96ns Turn-off time: 187ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 83nC Kind of package: tube Turn-on time: 96ns Turn-off time: 187ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 112 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW50N65F1A | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW50N65F1A | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns кількість в упаковці: 1 шт |
на замовлення 106 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW50N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW50N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns кількість в упаковці: 1 шт |
на замовлення 144 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW50N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW50N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns кількість в упаковці: 1 шт |
на замовлення 146 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW60N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 151W Collector current: 60A Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Turn-on time: 123ns Turn-off time: 256ns |
на замовлення 133 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW60N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 151W Collector current: 60A Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Turn-on time: 123ns Turn-off time: 256ns кількість в упаковці: 1 шт |
на замовлення 133 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Power dissipation: 71W Case: TO247 Mounting: THT Gate charge: 192nC Kind of package: tube Turn-off time: 274ns Turn-on time: 161ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Power dissipation: 71W Case: TO247 Mounting: THT Gate charge: 192nC Kind of package: tube Turn-off time: 274ns Turn-on time: 161ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V кількість в упаковці: 1 шт |
на замовлення 150 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Power dissipation: 500W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Turn-off time: 225ns Turn-on time: 215ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A Collector-emitter voltage: 650V |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Power dissipation: 500W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Turn-off time: 225ns Turn-on time: 215ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A Collector-emitter voltage: 650V кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Turn-off time: 348ns Turn-on time: 156ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Turn-off time: 348ns Turn-on time: 156ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V кількість в упаковці: 1 шт |
на замовлення 148 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||||
|
LGET1117-1.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LGET1117-1.8 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LGET1117-2.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 2.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.9...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LGET1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Kind of package: reel; tape |
на замовлення 3990 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGET1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
на замовлення 2013 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGET1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape |
на замовлення 3701 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
LGET1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3990 шт: термін постачання 14-21 дні (днів) |
|
| LGE3D06065F |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.72V
Max. load current: 30A
Leakage current: 110µA
Max. forward impulse current: 35A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.72V
Max. load current: 30A
Leakage current: 110µA
Max. forward impulse current: 35A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| LGE3D06065G |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 20A
Leakage current: 0.1mA
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 20A
Leakage current: 0.1mA
Max. forward impulse current: 25A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| LGE3D20120A |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
товару немає в наявності
В кошику
од. на суму грн.
| LGE3D20120D |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
товару немає в наявності
В кошику
од. на суму грн.
| LGE3D20120H |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Max. load current: 100A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Max. load current: 100A
товару немає в наявності
В кошику
од. на суму грн.
| LGE3D40120H |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 240A
Max. forward impulse current: 260A
Kind of package: tube
Leakage current: 46µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 240A
Max. forward impulse current: 260A
Kind of package: tube
Leakage current: 46µA
товару немає в наявності
В кошику
од. на суму грн.
| LGE3M18120Q |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| LGE3M40120Q |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 145nC
On-state resistance: 69mΩ
Power dissipation: 300W
Drain current: 39A
Drain-source voltage: 1.2kV
Pulsed drain current: 117A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 145nC
On-state resistance: 69mΩ
Power dissipation: 300W
Drain current: 39A
Drain-source voltage: 1.2kV
Pulsed drain current: 117A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| LGEA1117-1.5 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGEA1117-1.8 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGEA1117-2.5 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGEA1117-3.3 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
на замовлення 1005 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.26 грн |
| 55+ | 7.86 грн |
| 100+ | 6.52 грн |
| 500+ | 5.55 грн |
| 1000+ | 5.20 грн |
| LGEA1117-5.0 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Voltage drop: 1.15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Voltage drop: 1.15V
на замовлення 1265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.26 грн |
| 55+ | 7.90 грн |
| 100+ | 6.63 грн |
| 500+ | 5.62 грн |
| 1000+ | 5.28 грн |
| LGEA1117-ADJ |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
на замовлення 920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 11.36 грн |
| 60+ | 6.84 грн |
| 100+ | 5.71 грн |
| 500+ | 4.83 грн |
| LGEA1117-3.3 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1005 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.91 грн |
| 35+ | 9.80 грн |
| 100+ | 7.83 грн |
| 500+ | 6.66 грн |
| 1000+ | 6.24 грн |
| 2000+ | 5.65 грн |
| 5000+ | 5.55 грн |
| LGEA1117-5.0 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Voltage drop: 1.15V
кількість в упаковці: 5 шт
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Voltage drop: 1.15V
кількість в упаковці: 5 шт
на замовлення 1265 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.91 грн |
| 35+ | 9.84 грн |
| 100+ | 7.95 грн |
| 500+ | 6.74 грн |
| 1000+ | 6.33 грн |
| 2000+ | 5.73 грн |
| 5000+ | 5.59 грн |
| LGEA1117-ADJ |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 920 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.63 грн |
| 40+ | 8.53 грн |
| 100+ | 6.86 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.46 грн |
| 2000+ | 5.19 грн |
| LGEGB15N65T2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
на замовлення 692 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.34 грн |
| 11+ | 39.08 грн |
| 25+ | 34.77 грн |
| 100+ | 32.21 грн |
| 400+ | 30.21 грн |
| LGEGB15N65T2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
кількість в упаковці: 1 шт
на замовлення 692 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.81 грн |
| 10+ | 48.71 грн |
| 25+ | 41.72 грн |
| 100+ | 38.65 грн |
| 400+ | 36.26 грн |
| 800+ | 35.78 грн |
| LGEGF15N65T2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.34 грн |
| 11+ | 39.16 грн |
| 12+ | 34.77 грн |
| 50+ | 32.21 грн |
| LGEGF15N65T2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
кількість в упаковці: 1 шт
на замовлення 191 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.81 грн |
| 7+ | 48.80 грн |
| 10+ | 41.72 грн |
| 50+ | 38.65 грн |
| 250+ | 36.26 грн |
| 1000+ | 35.78 грн |
| LGEGP15N65T2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
на замовлення 472 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.34 грн |
| 11+ | 39.16 грн |
| 12+ | 34.77 грн |
| 50+ | 32.21 грн |
| 250+ | 30.21 грн |
| LGEGP15N65T2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
кількість в упаковці: 1 шт
на замовлення 472 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.81 грн |
| 7+ | 48.80 грн |
| 10+ | 41.72 грн |
| 50+ | 38.65 грн |
| 250+ | 36.26 грн |
| 1000+ | 35.78 грн |
| LGEGW100N65FP |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 425.21 грн |
| 3+ | 354.88 грн |
| 10+ | 314.11 грн |
| 30+ | 291.73 грн |
| 120+ | 272.55 грн |
| LGEGW100N65FP |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 125 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 510.26 грн |
| 3+ | 442.23 грн |
| 10+ | 376.94 грн |
| 30+ | 350.08 грн |
| 120+ | 327.06 грн |
| 240+ | 319.39 грн |
| LGEGW15N120TS |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
на замовлення 430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.49 грн |
| 10+ | 103.91 грн |
| 30+ | 96.71 грн |
| 120+ | 90.32 грн |
| 240+ | 87.92 грн |
| LGEGW15N120TS |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 430 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 169.40 грн |
| 3+ | 146.41 грн |
| 10+ | 124.69 грн |
| 30+ | 116.05 грн |
| 120+ | 108.38 грн |
| 240+ | 105.50 грн |
| LGEGW20N65SEK |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Turn-off time: 232ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Turn-off time: 232ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.49 грн |
| 10+ | 103.91 грн |
| 30+ | 96.71 грн |
| 120+ | 90.32 грн |
| LGEGW20N65SEK |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Turn-off time: 232ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Turn-off time: 232ns
кількість в упаковці: 1 шт
на замовлення 146 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 169.40 грн |
| 3+ | 146.41 грн |
| 10+ | 124.69 грн |
| 30+ | 116.05 грн |
| 120+ | 108.38 грн |
| 240+ | 105.50 грн |
| LGEGW25N120S |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
на замовлення 102 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.27 грн |
| 10+ | 125.49 грн |
| 30+ | 116.69 грн |
| LGEGW25N120S |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 102 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 204.52 грн |
| 3+ | 177.29 грн |
| 10+ | 150.58 грн |
| 30+ | 140.03 грн |
| 120+ | 130.44 грн |
| 240+ | 127.56 грн |
| LGEGW40N120F |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.33 грн |
| 3+ | 235.79 грн |
| 10+ | 209.41 грн |
| 30+ | 194.22 грн |
| 120+ | 181.44 грн |
| LGEGW40N120F |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
кількість в упаковці: 1 шт
на замовлення 130 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 338.79 грн |
| 3+ | 293.83 грн |
| 10+ | 251.29 грн |
| 30+ | 233.07 грн |
| 120+ | 217.72 грн |
| 240+ | 212.93 грн |
| LGEGW40N120F2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
на замовлення 141 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.33 грн |
| 3+ | 235.79 грн |
| 10+ | 209.41 грн |
| 30+ | 194.22 грн |
| 120+ | 181.44 грн |
| LGEGW40N120F2 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
кількість в упаковці: 1 шт
на замовлення 141 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 338.79 грн |
| 3+ | 293.83 грн |
| 10+ | 251.29 грн |
| 30+ | 233.07 грн |
| 120+ | 217.72 грн |
| 240+ | 212.93 грн |
| LGEGW40N120TS |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
на замовлення 149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.33 грн |
| 3+ | 235.79 грн |
| 10+ | 209.41 грн |
| 30+ | 194.22 грн |
| 120+ | 181.44 грн |
| LGEGW40N120TS |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
кількість в упаковці: 1 шт
на замовлення 149 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 338.79 грн |
| 3+ | 293.83 грн |
| 10+ | 251.29 грн |
| 30+ | 233.07 грн |
| 120+ | 217.72 грн |
| 240+ | 212.93 грн |
| LGEGW40N65F1 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 112 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.69 грн |
| 10+ | 103.11 грн |
| 30+ | 95.91 грн |
| LGEGW40N65F1 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 112 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.33 грн |
| 3+ | 145.42 грн |
| 10+ | 123.73 грн |
| 30+ | 115.10 грн |
| 120+ | 107.42 грн |
| 240+ | 105.50 грн |
| LGEGW50N65F1A |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
на замовлення 106 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.07 грн |
| 10+ | 129.48 грн |
| 30+ | 119.89 грн |
| LGEGW50N65F1A |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
кількість в упаковці: 1 шт
на замовлення 106 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.71 грн |
| 3+ | 183.27 грн |
| 10+ | 155.38 грн |
| 30+ | 143.87 грн |
| 120+ | 136.20 грн |
| 240+ | 132.36 грн |
| LGEGW50N65SEK |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
на замовлення 144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.07 грн |
| 10+ | 129.48 грн |
| 30+ | 119.89 грн |
| 120+ | 113.50 грн |
| LGEGW50N65SEK |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
кількість в упаковці: 1 шт
на замовлення 144 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.71 грн |
| 3+ | 183.27 грн |
| 10+ | 155.38 грн |
| 30+ | 143.87 грн |
| 120+ | 136.20 грн |
| 240+ | 132.36 грн |
| LGEGW50N65SEU |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.07 грн |
| 10+ | 129.48 грн |
| 30+ | 119.89 грн |
| 120+ | 113.50 грн |
| LGEGW50N65SEU |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
кількість в упаковці: 1 шт
на замовлення 146 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.71 грн |
| 3+ | 183.27 грн |
| 10+ | 155.38 грн |
| 30+ | 143.87 грн |
| 120+ | 136.20 грн |
| 240+ | 132.36 грн |
| LGEGW60N65SEU |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
на замовлення 133 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 172.64 грн |
| 10+ | 153.46 грн |
| 30+ | 142.27 грн |
| 120+ | 131.88 грн |
| LGEGW60N65SEU |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
кількість в упаковці: 1 шт
на замовлення 133 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.86 грн |
| 3+ | 215.14 грн |
| 10+ | 184.15 грн |
| 30+ | 170.72 грн |
| 120+ | 158.26 грн |
| 240+ | 156.34 грн |
| LGEGW75N65F |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.83 грн |
| 3+ | 223.00 грн |
| 10+ | 196.62 грн |
| 30+ | 183.83 грн |
| 120+ | 171.04 грн |
| LGEGW75N65F |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
на замовлення 150 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 320.20 грн |
| 3+ | 277.89 грн |
| 10+ | 235.95 грн |
| 30+ | 220.60 грн |
| 120+ | 205.25 грн |
| 240+ | 201.42 грн |
| LGEGW75N65FP |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-off time: 225ns
Turn-on time: 215ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-off time: 225ns
Turn-on time: 215ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 650V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.83 грн |
| 3+ | 223.00 грн |
| 10+ | 196.62 грн |
| 30+ | 183.83 грн |
| LGEGW75N65FP |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-off time: 225ns
Turn-on time: 215ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-off time: 225ns
Turn-on time: 215ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 320.20 грн |
| 3+ | 277.89 грн |
| 10+ | 235.95 грн |
| 30+ | 220.60 грн |
| 120+ | 205.25 грн |
| 240+ | 201.42 грн |
| LGEGW75N65S |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.83 грн |
| 3+ | 223.00 грн |
| 10+ | 196.62 грн |
| 30+ | 183.83 грн |
| 120+ | 171.04 грн |
| LGEGW75N65S |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
на замовлення 148 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 320.20 грн |
| 3+ | 277.89 грн |
| 10+ | 235.95 грн |
| 30+ | 220.60 грн |
| 120+ | 205.25 грн |
| 240+ | 201.42 грн |
| LGET1117-1.5 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-1.8 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-2.5 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-3.3 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
на замовлення 3990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.39 грн |
| 55+ | 7.42 грн |
| 100+ | 6.22 грн |
| 500+ | 5.25 грн |
| 1000+ | 4.96 грн |
| 2000+ | 4.47 грн |
| LGET1117-5.0 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
на замовлення 2013 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.43 грн |
| 50+ | 8.02 грн |
| 100+ | 6.68 грн |
| 500+ | 5.68 грн |
| 1000+ | 5.33 грн |
| 2000+ | 4.82 грн |
| LGET1117-ADJ |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
на замовлення 3701 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.43 грн |
| 50+ | 8.06 грн |
| 100+ | 6.71 грн |
| 500+ | 5.71 грн |
| 1000+ | 5.36 грн |
| 2000+ | 4.84 грн |
| LGET1117-3.3 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3990 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 14.87 грн |
| 35+ | 9.24 грн |
| 100+ | 7.46 грн |
| 500+ | 6.30 грн |
| 1000+ | 5.95 грн |
| 2000+ | 5.36 грн |
| 4000+ | 5.25 грн |













