Продукція > MCC (MICRO COMMERCIAL COMPONENTS) > Всі товари виробника MCC (MICRO COMMERCIAL COMPONENTS) (8235) > Сторінка 126 з 138
Фото | Назва | Виробник | Інформація |
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TBSA60M-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TBSG Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 4510 шт: термін постачання 21-31 дні (днів) |
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MCT1117C-ADJ-TP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -20°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: SOT-223 Voltage - Output (Min/Fixed): 1.25V PSRR: 60dB ~ 62dB (120Hz ~ 1kHz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Temperature |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MUR160GP-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MJD32CHE3-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-252 (DPAK) Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.25 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDTC143ECA-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DDTC143ECA-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 5935 шт: термін постачання 21-31 дні (днів) |
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P6KE91A-BP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 4.8A Voltage - Reverse Standoff (Typ): 77.8V Supplier Device Package: DO-15 Unidirectional Channels: 1 Voltage - Breakdown (Min): 86.5V Voltage - Clamping (Max) @ Ipp: 125V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ58CAQ-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 4.3A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCAC1D4N04YL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tj) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: DFN5060 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MCAC1D4N04YL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tj) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: DFN5060 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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15KP200CAL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 47A Voltage - Reverse Standoff (Typ): 200V Supplier Device Package: R-6 Bidirectional Channels: 1 Voltage - Breakdown (Min): 222V Voltage - Clamping (Max) @ Ipp: 322V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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15KP200CAL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 47A Voltage - Reverse Standoff (Typ): 200V Supplier Device Package: R-6 Bidirectional Channels: 1 Voltage - Breakdown (Min): 222V Voltage - Clamping (Max) @ Ipp: 322V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SICW025N120H4-BP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Power Dissipation (Max): 375W (Tc) Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 4.5V @ 50mA |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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SICW025N120H-BP | MCC (Micro Commercial Components) |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Power Dissipation (Max): 375W (Tc) Supplier Device Package: TO-247AB Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 4.5V @ 50mA |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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SB250-AP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB250-TP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCAC30P03-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 41.7W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN5060 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V |
на замовлення 9995 шт: термін постачання 21-31 дні (днів) |
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MCAC30P03-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 41.7W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN5060 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V |
на замовлення 9995 шт: термін постачання 21-31 дні (днів) |
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MCU30P03-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 62.5W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1719 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SICW040N120H-BP | MCC (Micro Commercial Components) |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40mA Supplier Device Package: TO-247AB Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V |
на замовлення 205 шт: термін постачання 21-31 дні (днів) |
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GS1MFLHE3-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GBUA10M-BP | MCC (Micro Commercial Components) |
![]() Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 4948 шт: термін постачання 21-31 дні (днів) |
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B5819P1L-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Capacitance @ Vr, F: 150pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DFN1608-2 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2310K-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V Power Dissipation (Max): 1.3W (Tj) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V |
на замовлення 29980 шт: термін постачання 21-31 дні (днів) |
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15KP54AL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 171A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: R-6 Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.5V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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15KP54CAL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 171A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: R-6 Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.5V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2302AK-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2303K-TP | MCC (Micro Commercial Components) |
Description: P-CHANNEL MOSFET,SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 300mA, 4.5V Power Dissipation (Max): 1W (Tj) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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5.0SMLJ180CA-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.1A Voltage - Reverse Standoff (Typ): 180V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 200V Voltage - Clamping (Max) @ Ipp: 292V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMF12CAQ-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 10.05A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SOD-123FL Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SICW060N065H-BP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 20mA Supplier Device Package: TO-247AB Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SICW060N065H4-BP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 20mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAZ24HE3-TP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCTL270N04YHE3-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 468W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCTL1D4N10YH-TP | MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,TOLL-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 297W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10768 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCTL2D1N10YH-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 265A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 375W (Tj) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCTL2D1N10YH-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 265A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 375W (Tj) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCTK105N60FH-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 15.3A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.1mA Supplier Device Package: TOLL-8L-KS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MCTK105N60FH-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 15.3A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.1mA Supplier Device Package: TOLL-8L-KS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MCTK075N60FH-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V Power Dissipation (Max): 88W (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V Vgs(th) (Max) @ Id: 5V @ 2.8mA Supplier Device Package: TOLL-8L-KS |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MCTK075N60FH-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V Power Dissipation (Max): 88W (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V Vgs(th) (Max) @ Id: 5V @ 2.8mA Supplier Device Package: TOLL-8L-KS |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MCQ070N15YH-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V Power Dissipation (Max): 3.5W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MCQ070N15YH-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V Power Dissipation (Max): 3.5W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MSJWFR60N60-BP | MCC (Micro Commercial Components) |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 37.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: TO-247AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8078 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI3415D-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V Power Dissipation (Max): 1W (Tj) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MSJPFFR20N60-BP | MCC (Micro Commercial Components) |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 8.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.7mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
на замовлення 1986 шт: термін постачання 21-31 дні (днів) |
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MSJPFR20N60-BP | MCC (Micro Commercial Components) |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 8.5A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.7mA Supplier Device Package: TO-220AB (H) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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15KP33AL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 274A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: R-6 Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 54.8V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847BSQ-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847BSQ-TP | MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UMD3N-TPQ2 | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCQD08P04-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 30V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 23.98nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MURB15120L-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
на замовлення 1485 шт: термін постачання 21-31 дні (днів) |
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15KP33CAL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 274A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: R-6 Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 54.8V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SICW080N120H-BP | MCC (Micro Commercial Components) |
Description: SIC MOSFET,TO-247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V Power Dissipation (Max): 224W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 20mA Supplier Device Package: TO-247AB Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SICW080N120H4-BP | MCC (Micro Commercial Components) |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V Power Dissipation (Max): 224W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 20mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SICW080N120Y-BP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJP6KE110CAQ-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 4A Voltage - Reverse Standoff (Typ): 94V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 104.5V Voltage - Clamping (Max) @ Ipp: 152V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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15KP30AL-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 296A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: R-6 Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 50.7V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCAC80P06YHE3-TP | MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
TBSA60M-TP |
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Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 6A TBSG
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A TBSG
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4510 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 39.69 грн |
11+ | 28.06 грн |
100+ | 20.51 грн |
500+ | 14.68 грн |
1000+ | 13.13 грн |
MCT1117C-ADJ-TP |
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Виробник: MCC (Micro Commercial Components)
Description: IC REG LINEAR POS ADJ 1A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 1.25V
PSRR: 60dB ~ 62dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Temperature
Description: IC REG LINEAR POS ADJ 1A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 1.25V
PSRR: 60dB ~ 62dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Temperature
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
31+ | 10.32 грн |
44+ | 6.96 грн |
50+ | 6.12 грн |
100+ | 4.87 грн |
250+ | 4.46 грн |
500+ | 4.22 грн |
1000+ | 3.95 грн |
2500+ | 3.88 грн |
MUR160GP-TP |
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Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.61 грн |
MJD32CHE3-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 100V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Qualification: AEC-Q101
Description: TRANS PNP 100V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Qualification: AEC-Q101
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В кошику
од. на суму грн.
DDTC143ECA-TP |
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Виробник: MCC (Micro Commercial Components)
Description: DIGITAL TRANSISTOR NPN SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: DIGITAL TRANSISTOR NPN SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.37 грн |
DDTC143ECA-TP |
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Виробник: MCC (Micro Commercial Components)
Description: DIGITAL TRANSISTOR NPN SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: DIGITAL TRANSISTOR NPN SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.44 грн |
25+ | 12.38 грн |
100+ | 7.75 грн |
500+ | 5.36 грн |
1000+ | 4.74 грн |
P6KE91A-BP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 77.8VWM 125VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Description: TVS DIODE 77.8VWM 125VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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В кошику
од. на суму грн.
SMAJ58CAQ-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
MCAC1D4N04YL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 185A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
Description: MOSFET N-CH 40 185A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 37.46 грн |
MCAC1D4N04YL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 185A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
Description: MOSFET N-CH 40 185A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 91.30 грн |
10+ | 66.13 грн |
100+ | 52.57 грн |
500+ | 41.63 грн |
1000+ | 36.25 грн |
2000+ | 35.62 грн |
15KP200CAL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 200VWM 322VC R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Description: TVS DIODE 200VWM 322VC R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
500+ | 171.05 грн |
1000+ | 159.63 грн |
15KP200CAL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 200VWM 322VC R-6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Description: TVS DIODE 200VWM 322VC R-6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 423.94 грн |
10+ | 273.46 грн |
100+ | 197.22 грн |
SICW025N120H4-BP |
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Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Power Dissipation (Max): 375W (Tc)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Power Dissipation (Max): 375W (Tc)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 50mA
на замовлення 350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1197.19 грн |
10+ | 868.38 грн |
SICW025N120H-BP |
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Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Power Dissipation (Max): 375W (Tc)
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Power Dissipation (Max): 375W (Tc)
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 50mA
на замовлення 360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1189.25 грн |
10+ | 862.11 грн |
360+ | 806.25 грн |
SB250-AP |
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Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 50V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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од. на суму грн.
SB250-TP |
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Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 50V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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MCAC30P03-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 30 30A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Description: MOSFET P-CH 30 30A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 10.71 грн |
MCAC30P03-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 30 30A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Description: MOSFET P-CH 30 30A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 50.02 грн |
11+ | 29.51 грн |
100+ | 18.95 грн |
500+ | 13.50 грн |
1000+ | 12.11 грн |
2000+ | 10.95 грн |
MCU30P03-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1719 pF @ 25 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1719 pF @ 25 V
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SICW040N120H-BP |
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Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V
на замовлення 205 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 843.91 грн |
10+ | 605.93 грн |
GS1MFLHE3-TP |
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Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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GBUA10M-BP |
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Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4948 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.54 грн |
10+ | 38.07 грн |
100+ | 29.20 грн |
500+ | 24.09 грн |
1000+ | 20.85 грн |
2000+ | 19.76 грн |
B5819P1L-TP |
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Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 1A DFN16082
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608-2
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DFN16082
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608-2
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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SI2310K-TP |
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Виробник: MCC (Micro Commercial Components)
Description: SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Description: SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
на замовлення 29980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.79 грн |
19+ | 16.67 грн |
100+ | 10.46 грн |
500+ | 7.29 грн |
1000+ | 6.48 грн |
15KP54AL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 54VWM 87.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 171A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Description: TVS DIODE 54VWM 87.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 171A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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15KP54CAL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 54VWM 87.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 171A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Description: TVS DIODE 54VWM 87.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 171A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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SI2302AK-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 10 V
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 10 V
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SI2303K-TP |
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 300mA, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 25 V
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 300mA, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 25 V
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5.0SMLJ180CA-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 180VWM 292VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.1A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 292V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 180VWM 292VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.1A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 292V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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SMF12CAQ-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 12VWM 19.9VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.05A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 19.9VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.05A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SICW060N065H-BP |
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Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247AB
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
Description: SIC MOSFETS,TO-247AB
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SICW060N065H4-BP |
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Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
Description: SIC MOSFETS,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SMAZ24HE3-TP |
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Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 24V 1W DO214AC
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 1W DO214AC
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Qualification: AEC-Q101
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MCTL270N04YHE3-TP |
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Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 468W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
Qualification: AEC-Q101
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 468W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
Qualification: AEC-Q101
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MCTL1D4N10YH-TP |
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10768 pF @ 50 V
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10768 pF @ 50 V
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MCTL2D1N10YH-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tj)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tj)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
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MCTL2D1N10YH-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tj)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tj)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
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MCTK105N60FH-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 15.3A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 15.3A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 132.46 грн |
MCTK105N60FH-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 15.3A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 15.3A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 365.98 грн |
10+ | 233.55 грн |
100+ | 166.07 грн |
500+ | 128.84 грн |
1000+ | 120.16 грн |
MCTK075N60FH-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TOLL-8L-KS
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TOLL-8L-KS
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 187.33 грн |
MCTK075N60FH-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TOLL-8L-KS
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TOLL-8L-KS
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 473.95 грн |
10+ | 306.33 грн |
100+ | 221.35 грн |
500+ | 173.73 грн |
1000+ | 169.29 грн |
MCQ070N15YH-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V
Description: N-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 13.62 грн |
8000+ | 12.07 грн |
MCQ070N15YH-TP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V
Description: N-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.54 грн |
10+ | 35.55 грн |
100+ | 23.00 грн |
500+ | 16.49 грн |
1000+ | 14.85 грн |
2000+ | 13.47 грн |
MSJWFR60N60-BP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 37.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8078 pF @ 100 V
Description: N-CHANNEL MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 37.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8078 pF @ 100 V
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SI3415D-TP |
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Виробник: MCC (Micro Commercial Components)
Description: SMALL SINGAL MOSFETS,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Description: SMALL SINGAL MOSFETS,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
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MSJPFFR20N60-BP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 1986 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 177.83 грн |
10+ | 142.65 грн |
100+ | 109.34 грн |
500+ | 84.54 грн |
1000+ | 78.41 грн |
MSJPFR20N60-BP |
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Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 8.5A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 8.5A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 177.83 грн |
10+ | 142.65 грн |
100+ | 109.34 грн |
500+ | 83.33 грн |
1000+ | 74.76 грн |
2000+ | 69.40 грн |
15KP33AL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33VWM 54.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Description: TVS DIODE 33VWM 54.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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BC847BSQ-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TRANS 2NPN 45V 100MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 100MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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BC847BSQ-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TRANS 2NPN 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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UMD3N-TPQ2 |
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Виробник: MCC (Micro Commercial Components)
Description: PRE-BIASED TRANSISTOR
Packaging: Tape & Reel (TR)
Description: PRE-BIASED TRANSISTOR
Packaging: Tape & Reel (TR)
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MCQD08P04-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2P-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 30V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.98nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 30V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.98nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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MURB15120L-TP |
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Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1200V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE STANDARD 1200V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 166.72 грн |
10+ | 102.82 грн |
100+ | 69.84 грн |
800+ | 49.31 грн |
15KP33CAL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33VWM 54.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Description: TVS DIODE 33VWM 54.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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SICW080N120H-BP |
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V
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SICW080N120H4-BP |
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Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V
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SICW080N120Y-BP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 1200V 38A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V
Description: MOSFET N-CH 1200V 38A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V
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SMBJP6KE110CAQ-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 94VWM 152VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 94VWM 152VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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15KP30AL-TP |
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Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 30VWM 50.7VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 296A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 50.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Description: TVS DIODE 30VWM 50.7VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 296A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 50.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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MCAC80P06YHE3-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 60 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Qualification: AEC-Q101
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